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DMG4511SK4-13
Dual MOSFET, Complementary N and P Channel, 35 V, 35 V, 5.3 A, 5.3 A, 0.035 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 4Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: TO-252 (DPAK)
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.54W
- Power Dissipation P Channel: 1.54W
- Drain Source Voltage Vds N Channel: 35V
- Drain Source Voltage Vds P Channel: 35V
- Continuous Drain Current Id N Channel: 5.3A
- Continuous Drain Current Id P Channel: 5.3A
- Drain Source On State Resistance N Channel: 0.035ohm
- Drain Source On State Resistance P Channel: 0.045ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.264 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**DMG4511SK4**
**COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET**
## **Product Summary**
|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**RDS(ON)**|**ID **<br>**TA = +25°C**|
|35V|35mΩ @ VGS= 10V|13A|
|-35V|45mΩ @ VGS= -10V|-12A|
## **Features and Benefits**
- 0.6mm profile – ideal for low profile applications 2
- PCB footprint of 4mm
- Low Gate Threshold Voltage
- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)**
- **Halogen and Antimony Free. “Green” Device (Note 3)**
- **Qualified to AEC-Q101 Standards for High Reliability**
## **Description**
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
## **Mechanical Data**
- Case: TO252-4L
- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Connections Indicator: See diagram
## **Applications**
- Backlighting
- Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
- Weight: 0.328 grams (approximate)
- DC-DC Converters
- Power management functions
TO252-4L
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D<br>D D<br>G2 G1<br>as. .. D © S2 8 @ S1<br>S2 G2 S1 G1<br>Top View Bottom View Pinout Top view N-Channel MOSFET P-Channel MOSFET<br>**----- End of picture text -----**<br>
## **Ordering Information** (Note 3)
|**Part Number**|**Case**|**Packaging**|
|---|---|---|
|DMG4511SK4-7|TO252-4L|3000 / Tape&Reel|
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
## **Marking Information**
> = Manufacturer’s Marking Ji G4511S = Product Type Marking Code **G4511S** YYWW = Date Code Marking **YYWW** YY = Year (ex: 09 = 2009) WW = Week (01 – 53)
1 of 9 **www.diodes.com**
DMG4511SK4 Document number: DS32042 Rev. 6 - 2
April 2014 © Diodes Incorporated
**DMG4511SK4**
**Maximum Ratings – N-CHANNEL, Q1** (@TA = +25°C, unless otherwise specified.)
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||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|eea|Drain-Source VoltaGate-Source Voltagge e|ee|VVGSSDSS|(ee|±20 35|V V|
|es|Continuous Drain Current (Note 5) VGS = 10V|Steady State|TTAA|= +25°C = +70°C|ID|5.3 4.2|A|
|ee|Continuous Drain Current (Note 6) VGS = 10V|Steady State|TTAA|= +25°C = +70°C|ID|8.6 6.8|A|
|eeeeeea|Continuous Drain Current (Note 6) VContinuous Drain Current (Note 6) VContinuous Drain Current (Note 6) VPulsed Drain Current (Note 7)|GSGSGS = 10V = 4.5V = 4.5V|eeee|Steady t ≤ 10s t ≤ 10s|ee|State|TTTTTTAAAAAA|= +25°C = +70°C = +25°C = +70°C =+ 25°C = +70°C|ee|IDMIIIDDD|6.3 5.0 9.3 7.4 13 11 50|A A A A|
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**Maximum Ratings – P-CHANNEL, Q2** (@TA = +25°C, unless otherwise specified.)
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|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|eeCO|Drain-Source VoltaGate-Source Voltagge e|VV|ee|GSSDSS|ee|±20 -35|V V|
|eeeeeeeeeea|Continuous Drain Current (Note 5) VContinuous Drain Current (Note 6) VContinuous Drain Current (Note 6) VContinuous Drain Current (Note 6) VContinuous Drain Current (Note 6) VPulsed Drain Current (Note 7)|GSGSGSGSGS = -10V = -10V = -10V = -4.5V = -4.5V|eeeeee|Steady Steady Steady t ≤ 10s t ≤ 10s State State State|eeee|TTTTTTTTTTAAAAAAAAAA|= +25°C = +70°C = +25°C = +70°C = +25°C = +70°C = +25°C = +70°C = +25°C = +70°C|eeee|IDMIIIIIDDDDD|ee|-5.0 -3.8 -7.8 -6.2 -6.5 -5.2 -9.6 -7.7 -12 -10 -50|A A A A A A|
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## **Thermal Characteristics**
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||||||
|---|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Power Dissipation (Note 5)|PD|1.54|W|
|Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)|RθJA|81.3|°C/W|
|Power Dissipation (Note 6)|PD|4.1|W|
|Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)|RθJA|30.8|°C/W|
|Power Dissipation (Note 6) t ≤ 10s|PD|8.9|W|
|Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) t ≤ 10s|RθJA|14|°C/W|
|Operating and Storage Temperature Range|TJ,|TSTG|-55 to +150|°C|
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- Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2 of 9 **www.diodes.com**
DMG4511SK4 Document number: DS32042 Rev. 6 - 2
April 2014 © Diodes Incorporated
**DMG4511SK4**
**Electrical Characteristics – N-CHANNEL, Q1** (@TA = +25°C, unless otherwise specified.)
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|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition|
|Ce|OFF CHARACTERISTICS (Note 8)|
|GO|Drain-Source Breakdown Voltage|BVDSS|35|GO|—|GO|—|GO|V|VGS = 0V, ID = 250μA|
|GOD|Zero Gate Voltage Drain Current TJ = +25°C|IDSS|—|—|1.0|μA|VDS = 35V, VGS = 0V|
|(OD|Gate-Source Leakage|IGSS|—|GO|—|(G|±100|GO|nA|(|VGS = ±20V, VDS = 0V|O|
|Ce|ON CHARACTERISTICS (Note 8)|
|GD|Gate Threshold Voltage|VGS(th)|1.0|GO|—|3.0|(S(O|V|VDS = VGS, ID = 250μA|
|25|35|VGS = 10V, ID = 8A|
|EE|Static Drain-Source On-Resistance|RDS (ON)|—|50|65|mΩ|Pp|VGS = 4.5V, ID = 6A|
|Pee|Forward Transfer Admittance||Yfs||—|4.5|—|S|VDS = 10V, ID = 8A|
|GO|Diode Forward Voltage|VSD|—|—|(OG|1.2|V|VGS = 0V, IS = 8A|
|Cee|DYNAMIC CHARACTERISTICS (Note 9)|
|nO|Input Capacitance|Ciss|—|850|—|pF|
|a|Output Capacitance|Coss|—|64.7|—|pF|f = 1.0MHz VDS = 25V, VGS = 0V,|
|nO|Reverse Transfer Capacitance|Crss|—|51.9|—|pF|
|nD|Gate Resistance|R|GD|g|—|OO|1.6|—|(S(O|Ω|VDS = 0V, VGS = 0V, f = 1MHz|
|Total Gate Charge (VGS = 10V)|Qg|—|18.7|—|VGS = 10V, VDS = 28V, ID = 8A|
|a|Total Gate Charge (VGS = 4.5V)|Qg|—|8.8|—|nC|Po|VGS = 4.5V, VDS = 28V,|
|a|Gate-Source Charge|Qgs|—|2.6|—|ID = 8A|
|a|Gate-Drain Charge|Qgd|—|2.1|—|
|nO|Turn-On Delay Time|tD(on)|—|5.4|—|ns|
|a|Turn-On Rise Time|tr|—|2.8|—|ns|RVDSL = 18Ω, R = 18V, VGGS = 3.3Ω, = 10V,|
|GO|Turn-Off Delay Time|tD(off)|—|33.2|(|—|ns|ID = 1A|
|ny|Turn-Off Fall Time|ee|tf|GD|—|GE|35.6|—|ns|
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**Electrical Characteristics – P-CHANNEL, Q2** (@TA = +25°C, unless otherwise specified.)
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Pee|Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition|
|Ce|OFF CHARACTERISTICS (Note 8)|
|GOS|Drain-Source Breakdown Voltage|BVDSS|-35|GO|—|—|(S(O|V|VGS = 0V, ID = -250μA|
|nD|Zero Gate Voltage Drain Current TJ = 25°C|IDSS|GD|—|OO|—|-1.0|(S(O|μA|VDS = -35V, VGS = 0V|
|nD|Gate-Source Leakage|IGSS|(OD|—|—|(O(n|±100|nA|VGS = ±20V, VDS = 0V|
|Cee|ON CHARACTERISTICS (Note 8)|
|Gate Threshold Voltage|VGS(th)|-1.0|—|-3.0|V|VDS = VGS, ID = -250μA|
|30|45|VGS = -10V, ID = -6A|
|ee|Static Drain-Source On-Resistance|a|RDS (ON)|—|ee|40|65|ee|mΩ|PO|VGS = -4.5V, ID|ee|= -4A|
|GS|Forward Transfer Admittance||Yfs||—|GO|8|—|(QO|S|VDS = -10V, ID = -6A|
|nD|Diode Forward Voltage|VSD|(OD|—|RN|—|-1.2|S(O|V|(OO|VGS = 0V, IS = -6A|
|Ce|DYNAMIC CHARACTERISTICS (Note 9)|
|NO|Input Capacitance|Ciss|—|985.2|—|pF|
|DO|Output Capacitance|Coss|—|90.6|—|pF|Vf = 1.0MHz DS = -25V, VGS = 0V,|
|en|Reverse Transfer Capacitance|GD|Crss|—|75.3|—|pF|
|Pee|Gate Resistance|Rg|—|7.0|—|Ω|VDS = 0V, VGS = 0V, f = 1MHz|
|a|Total Gate Charge (VGS = -10V)|Qg|—|19.2|—|Po|VGS = -10V, VDS = -28V, ID = -6A|
|a|Total Gate Charge (VGS = -4.5V)|Qg|—|9.5|—|nC|VGS = -4.5V, VDS = -28V,|
|a|Gate-Source Charge|Qgs|—|2.0|—|ID = -6A|
|Gate-Drain Charge|Qgd|—|3.5|—|
|I|Turn-On Delay Time|tD(on)|—|5.2|—|ns|
|GO|Turn-On Rise Time|tr|—|4.8|(|—|ns|VRDSL = 18Ω, R = -18V, VG = 3.3Ω, GS = -10V,|
|nD|Turn-Off Delay Time|tD(off)|—|I O|45.8|(|—|ns|ID = -1A|
|nD|Turn-Off Fall Time|GRD|tf|ID|—|29.5|I|—|I|ns|
|Notes:|8. Short duration pulse test used to minimize self-heating effect.|
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9. Guaranteed by design. Not subject to product testing.
3 of 9 **www.diodes.com**
DMG4511SK4 Document number: DS32042 Rev. 6 - 2
April 2014 © Diodes Incorporated
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DMG4511SK4<br>|<br>N-CHANNEL, Q1<br>30 30<br>25 V GS = 8.0V 25 VDS = 5V<br>VGS = 4.5V<br>VGS = 4.0V<br>20 20<br>15 V GS = 3.5V 15<br>10 10 TA = 150°C<br>VGS = 3.2V TA = 125°C<br>5 5 T A = 85°C T A = 25°C<br>VGS = 3.0V TA = -55°C<br>0 VGS = 2.8V 0<br>0 0.5 1 1.5 2 0 1 2 3 4 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristic Fig. 2 Typical Transfer Characteristic<br>0.05 0.08<br>0.07 V GS = 4.5V<br>0.04<br>0.06<br>TA = 150°C<br>0.05<br>0.03 V GS = 4.5V TA = 125°C<br>VGS = 8.0V 0.04 TA = 85°C<br>0.02<br>0.03 T A = 25°C<br>0.02 T A = -55°C<br>0.01<br>0.01<br>0 0<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A)<br>Fig. 3 Typical On-Resistance Fig. 4 Typical On-Resistance<br>vs. Drain Current and Gate Voltage vs. Drain Current and Temperature<br>1.7 0.06<br>VGS = 10V<br>1.5 ID = 10A 0.05<br>1.3 VGS = 4.5V 0.04<br>ID = 5A VGS = 4.5V<br>ID = 5A<br>1.1 0.03<br>0.9 0.02 V GS = 10V<br>ID = 10A<br>: :<br>0.7 0.01<br>0.5 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>DMG4511SK4 4 of 9<br>Document number: DS32042 Rev. 6 - 2 www.diodes.com © Diodes Incorporated<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) )<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)<br>, DRAIN-SOURCE<br>DSON<br>R<br>ON-RESISTANCE (NORMALIZED) , DRAIN-SOURCE ON-RESISTANCE (<br>DSON<br>R<br>**----- End of picture text -----**<br>
April 2014 © Diodes Incorporated
**DMG4511SK4**
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3.0 20<br>2.7 18<br>2.4 16<br>2.1 14 T A = 25°C<br>1.8 12<br>1.5 I D = 250µA 10<br>1.2 8<br>0.9 6<br>0.6 4<br>0.3 2<br>0 0<br>-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2<br>TA, AMBIENT TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>1,400 10,000<br>1,200 f = 1MHz<br>1,000 TA = 150 ° C<br>1,000<br>800 KEEP Ciss ers TA = 125 ° C<br>100<br>600 T A = 85°C<br>400<br>10 TA = 25°C<br>—<br>200 C oss<br>0 Crss 1<br>0 5 10 15 20 25 30 35 5 10 15 20 25 30 35<br>VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Typical Total Capacitance Fig. 10 Typical Leakage Current<br>vs. Drain-Source Voltage<br>—— ———<br>1<br>D = 0.7<br>D = 0.5<br>D = 0.3<br>0.1<br>D = 0.1<br>D = 0.05 D = 0.9<br>R JA (t) = r(t) * R JA<br>D = 0.02 RJA = 80°C/W<br>0.01<br>D = 0.01 P(pk)<br>t1<br>D = 0.005 t 2<br>T J - T A = P * R JA (t)<br>D = Single Pulse Duty Cycle, D = t 1 /t 2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 11 Transient Thermal Response<br>, SOURCE CURRENT (A)<br>, GATE THRESHOLD VOLTAGE (V)GS(TH) IS<br>V<br>, LEAKAGE CURRENT (nA)<br>C, CAPACITANCE (pF)<br>IDSS<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>
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DMG4511SK4 Document number: DS32042 Rev. 6 - 2
April 2014 © Diodes Incorporated
**DMG4511SK4**
## **P-CHANNEL, Q2**
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30 30<br>VGS = -8.0V<br>VGS = -4.5V<br>25 25<br>VGS = -4.0V<br>20 20<br>VGS = -3.5V<br>15 15<br>10 V GS = -3.2V 10<br>TA = 150°C<br>5 VGS = -3.0V 5 T A = 125°C TA = 85°C<br>VGS = -2.8V TA = 25°C<br>0 0 TA = -55°C<br>0 0.5 1 1.5 2 0 1 2 3 4 5<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 12 Typical Output Characteristic Fig. 13 Typical Transfer Characteristic<br>0.08 0.10<br>0.07<br>0.08<br>0.06<br>TA = 150°C<br>0.05<br>0.06<br>TA = 125°C<br>VGS = -4.5V<br>0.04 TA = 85°C<br>—— VGS = -8.0V 0.04 ——— T A = 25°C<br>0.03<br>0.02 TA = -55°C<br>0.02<br>0.01<br>0 0<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>-ID, DRAIN-SOURCE CURRENT (A) -ID, DRAIN CURRENT (A)<br>Fig. 14 Typical On-Resistance Fig. 15 Typical On-Resistance<br>vs. Drain Current and Gate Voltage vs. Drain Current and Temperature<br>1.7 0.10<br>0.09<br>1.5<br>0.08<br>0.07<br>1.3<br>0.06<br>1.1 0.05 V GS = -4.5V<br>VGS = -10V ID = -5A<br>ID = -10A 0.04<br>0.9<br>0.03 V GS = -10V<br>ID = -10A<br>0.02<br>0.7 et VGS = -4.5V Bee eetce<br>ID = -5A 0.01<br>0.5 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)<br>Fig. 16 On-Resistance Variation with Temperature Fig. 17 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)-ID , DRAIN CURRENT (A)-ID<br>)<br>) <br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)<br>, DRAIN-SOURCE<br>DSON<br>R<br>ON-RESISTANCE (NORMALIZED) , DRAIN-SOURCE ON-RESISTANCE (<br>DSON<br>R<br>**----- End of picture text -----**<br>
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DMG4511SK4 Document number: DS32042 Rev. 6 - 2
April 2014 © Diodes Incorporated
**www.diodes.com**
**DMG4511SK4**
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3.0 20<br>2.7 18<br>2.4 16<br>2.1 14<br>1.8 12 T A = 25°C<br>1.5 I D = -250µA 10<br>1.2 8<br>0.9 6<br>0.6 4<br>0.3 2<br>0 0 :<br>-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2<br>TA, AMBIENT TEMPERATURE (°C) -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 18 Gate Threshold Variation vs. Ambient Temperature Fig. 19 Diode Forward Voltage vs. Current<br>1,400 10,000<br>1,200 f = 1MHz<br>1,000 =====>= TA = 150°C<br>1,000 Ciss<br>SEECEL [7<br>800 ee TA = 125 ° C<br>100<br>600<br>====—— T A = 85°C<br>400<br>10 TA = 25°C<br>200 C oss<br>We Crss<br>0 1<br>0 5 10 15 20 25 30 35 5 10 15 20 25 30 35<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 20 Typical Total Capacitance Fig. 21 Typical Leakage Current vs. Drain-Source Voltage<br>1<br>D = 0.7<br>D = 0.5<br>D = 0.3<br>——<— Sf<br>0.1<br>D = 0.1 Saar alll<br>D = 0.9<br>D = 0.05<br>R JA (t) = r(t) * R JA<br>RJA = 80 ° C/W<br>D = 0.02<br>0.01 P(pk)<br>D = 0.01 LUI t1<br>t 2<br>D = 0.005 TJ - TA = P * RJA(t)<br>Duty Cycle, D = t1/t2<br>D = Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 22 Transient Thermal Response<br>, SOURCE CURRENT (A)<br>S<br>, GATE THRESHOLD VOLTAGE (V) -I<br>GS(TH)<br>-V<br>, LEAKAGE CURRENT (nA)<br>, TOTAL CAPACITANCE (pF)CT -IDSS<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>
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DMG4511SK4 Document number: DS32042 Rev. 6 - 2
April 2014 © Diodes Incorporated
**www.diodes.com**
**DMG4511SK4**
## **Package Outline Dimensions**
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
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TO252-4L<br>Dim Min Max Typ<br>E A | A | 2.19 | 2.39 | 2.29 |<br>b3 c2 | A1 {| 0.00 | 0.13 | 0.08 |<br>i<br>L3 | A2 0.97 1.17 1.07<br>b 0.51 0.71 0.583<br>b2 0.61 0.79 0.70<br>E 1 b3 5.21 5.46 5.33<br>D A2 L c2 0.45 0.58 0.531<br>H | |__||| D1D e [|] || 6.00 5.21 ||| [|] 6.20 || 6.101.27 |<br>|<br>: E 6.45 6.70 6.58<br>L4 A1 |<br>: E1 4.32 <br>A H 9.40 10.41 9.91<br>L<br>| | | v Vv v L 1.40 1.78 1.59<br><> < > > » < L3 | 0.88 1.27 1.08<br>4X b2 e 5X b he a |__| L4 a 0.64 1.02 ee 0.83<br>| a | 0° |{| 10° <br>[| All Dimensions in mm<br>**----- End of picture text -----**<br>
## **Suggested Pad Layout**
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
|||X1<br>~~"~~|X1<br>~~"~~|X1<br>~~"~~|X1<br>~~"~~|X1<br>~~"~~|X1<br>~~"~~|X1<br>~~"~~|X1<br>~~"~~|X1<br>~~"~~|X1<br>~~"~~|X1<br>~~"~~|X1<br>~~"~~||**Dimensions**<br>**c**|**Value(in mm)**<br>1.27|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||||||||||**c1**|2.54|
|Y1|||||||||||||||**X**<br>**X1**|1.00<br>5.73|
|||||||||||||||Y2|**Y**<br>**Y1**|2.00<br>6.17|
||||||||c1|||||||Y3|**Y2**<br>**Y3**|1.64<br>2.66|
|||||||||||||||Y|||
||||||||||||~~i~~||||||
||||X (4x)|||||||c|||||||
8 of 9 **www.diodes.com**
DMG4511SK4 Document number: DS32042 Rev. 6 - 2
April 2014 © Diodes Incorporated
**DMG4511SK4**
## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
## **LIFE SUPPORT**
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
**www.diodes.com**
9 of 9 **www.diodes.com**
DMG4511SK4 Document number: DS32042 Rev. 6 - 2
April 2014 © Diodes Incorporated
Updated at June 9, 2026
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