DMG1026UV-7

**DMG1026UV** i 

**DUAL N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**RDS(ON)**|**ID **<br>**TA = +25°C**|
|60V|1.8Ω@VGS= 10V|440mA|
||2.1Ω@VGS= 4.5V|410mA|



## **Features** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

## **Description** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

## **Applications** 

- Battery Operated Systems and Solid-State Relays 

- Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. 

- DC-DC Converters 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Mechanical Data** 

- Case: SOT563 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Terminal Connections: See Diagram Below 

   - Weight: 0.006 grams (Approximate) 

 

- Power Management Functions 

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SOT563  D1 D2<br>S1 1 6 D1<br>G1 G2<br>G1 2 5 G2<br>ESD PROTECTED TO 2kV D2 3 4 S2 Gate Protection Diode S1 Gate Protection Diode S2<br>Bae ? - O &<br>Top View  Bottom View  Top View  Q1 N-CHANNEL  Q2 N-CHANNEL<br>Pin Definition<br>Equivalent Circuit<br>Ordering Informationg Information Information (Note 4)<br>Part Number  Case  Packaging<br>DMG1026UV-7  SOT563  3,000 / Tape & Reel<br>**----- End of picture text -----**<br>


## **Ordering Informationg Information Information** (Note 4) 

- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** (Note 5) 

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SOT563<br>**----- End of picture text -----**<br>


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6  5  4  UA1 = Product Type Marking Code<br>YM = Date Code Marking<br>UA1 YM Y = Year (ex: D = 2016)<br>M = Month (ex: 9 = September)<br>1  2  3<br>Date Code Key<br>Year 2009 ~ 2016  2017  2018  2019  2020  2021  2022  2023<br>Code W  ~  D  E  F  G  H  I  J  K<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>rr Code 1  2  3 4  5 6 7  8 9 O N  D<br>Note:  5. Product manufactured with Date Code D9 (September, 2016) and newer are built with additional Pin 1 dot in marking information. Product manufactured<br>                       prior to Date Code D9 are built without Pin 1 dot.<br>**----- End of picture text -----**<br>


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DMG1026UV 

August 2016 © Diodes Incorporated 

**www.diodes.com** 

Document number: DS35068 Rev. 8 - 2 

**DMG1026UV** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|||||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|60|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= 10V|Steady<br>State|TA = +25°C<br>TA = +85°C|ID|410<br>300|mA|
|Continuous Drain Current (Note 7) VGS= 10V|t10s|TA = +25°C<br>TA = +85°C|ID|440<br>320|mA|
|Continuous Drain Current (Note 6) VGS= 4.5V|Steady<br>State|TA = +25°C<br>TA = +85°C|ID|380<br>270|mA|
|Continuous Drain Current (Note 7) VGS= 4.5V|t10s|TA = +25°C<br>TA = +85°C|ID|410<br>295|mA|
|Pulsed Drain Current (Note 8)|||IDM|1.0|A|



## **Thermal Characteristics** 

||||||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~_—S~~<br>~~PC~~|**Symbol**<br>~~_—S~~<br>~~= =e~~|**Min**<br>~~_—S~~<br>~~=e~~|**Typ**<br>~~_—S~~<br>~~=e~~|**Max**<br>~~_—S~~<br>~~=e~~|**Unit**<br>~~_—S~~<br>~~=e~~|**Test Condition**<br>~~_—S~~<br>~~=e~~|
|**OFF CHARACTERISTICS(Note 9)**<br>~~_—S~~<br>~~= =e~~<br>~~PC~~|||||||
|Drain-Source Breakdown Voltage<br>~~_—S~~<br>~~PC~~|BVDSS<br>~~_—S~~<br>~~= =e~~|60<br>~~_—S~~<br>~~=e~~|—<br>~~_—S~~<br>~~=e~~|—<br>~~_—S~~<br>~~=e~~|V<br>~~_—S~~<br>~~=e~~|VGS= 0V, ID= 250μA<br>~~_—S~~<br>~~=e~~|
|Zero Gate Voltage Drain Current TJ= +25°C<br>~~_—S~~<br>~~PC~~|IDSS<br>~~_—S~~<br>~~= =e~~|—<br>~~_—S~~<br>~~=e~~|—<br>~~_—S~~<br>~~=e~~|1.0<br>~~_—S~~<br>~~=e~~|µA<br>~~_—S~~<br>~~=e~~|VDS= 50V, VGS= 0V<br>~~_—S~~<br>~~=e~~|
|Gate-Source Leakage<br>~~PC~~|IGSS<br>~~= =e~~|—<br>~~=e~~|—<br>~~=e~~|±50<br>~~=e~~|nA<br>~~=e~~|VGS= ±5V, VDS= 0V<br>~~=e~~|
|||—<br>~~=e~~|—<br>~~=e~~|±150<br>~~=e~~|nA<br>~~=e~~|VGS= ±10V, VDS= 0V<br>~~=e~~|
|**ON CHARACTERISTICS(Note 9)**<br>~~= =e~~<br>~~PCa~~<br>~~GG~~<br>~~GOOO~~|||||||
|Gate Threshold Voltage<br>~~PCa~~|VGS(th)<br>~~= =e~~<br>~~GG~~|0.5<br>~~=e~~<br>~~GG~~|—<br>~~=e~~<br>~~GG~~|1.8<br>~~=e~~<br>~~GG~~|V<br>~~=e~~<br>~~GO~~|VDS= VGS, ID= 250μA<br>~~=e~~<br>~~OO~~|
|Static Drain-Source On-Resistance<br>~~a~~<br>~~OE~~<br>~~a~~|RDS (ON)<br>~~GG~~<br>~~OE~~<br>~~GG~~|—<br>~~GG~~<br>~~OE~~|1.2<br>~~GG~~|1.8<br>~~GG~~|Ω<br>~~GO ~~<br>~~GO~~|VGS= 10V, ID= 500mA<br> ~~OO~~|
|||—<br>~~OE~~<br>~~GG~~|1.4<br>~~GG~~|2.1<br>~~GG~~||VGS= 4.5V, ID= 200mA<br>~~(OO~~|
|Forward Transfer Admittance<br>~~a~~||Yfs|<br>~~GG~~|80<br>~~GG~~|580<br>~~GG~~|—<br>~~GG~~|mS<br>~~GO~~|VDS= 10V, ID= 200mA<br>~~(OO~~|
|Continuous Source Current (Note 9)<br>~~a~~<br>~~ee~~|IS<br>~~GG~~<br>~~ee~~|—<br>~~GG~~<br>~~ee~~|—<br>~~GG~~<br>~~ee~~|200<br>~~GG~~<br>~~ee~~|mA<br>~~GO ~~<br>~~ee~~|-<br> ~~(OO~~<br>~~ee~~|
|Diode Forward Voltage<br>~~ee~~<br>~~SS~~<br>~~a~~|VSD<br>~~ee~~<br>~~a~~|—<br>~~ee~~<br>~~a~~|0.8<br>~~ee~~<br>~~a~~|1.3<br>~~ee~~<br>~~pO~~|V<br>~~ee~~<br>~~pO~~|VGS= 0V, IS= 200mA<br>~~ee~~<br>~~pO~~|
|**DYNAMIC CHARACTERISTICS(Note 10)**<br>~~SS~~<br>~~aaa~~<br>~~pO~~|||||||
|Input Capacitance<br>~~SS~~<br>~~a~~|Ciss<br>~~a~~|—<br>~~a~~|32<br>~~a~~|—<br>~~pO~~|pF<br>~~pO~~|VDS= 25V, VGS= 0V,<br>f = 1.0MHz<br>~~pO~~|
|Output Capacitance<br>~~SS~~<br>~~a ~~|Coss<br> ~~a ~~|—<br> ~~a~~|4.4<br>~~a~~|—<br>~~pO~~|||
|Reverse Transfer Capacitance|Crss|—|2.9|—|||
|Gate Resistance|Rg|—|126|—|Ω|VDS= 0V, VGS= 0V, f = 1MHz|
|Total Gate Charge<br>~~i~~|Qg<br>~~i~~|—<br>~~i~~|0.45<br>~~i~~|—<br>~~i~~|pC<br>~~i~~|VGS= 4.5V, VDS= 10V,<br>ID= 250mA<br>~~i~~|
|Gate-Source Charge<br>~~i~~|Qgs<br>~~i~~|—<br>~~i~~|0.08<br>~~i~~|—<br>~~i~~|||
|Gate-Drain Charge<br>~~i~~|Qgd<br>~~i~~|—<br>~~i~~|0.08<br>~~i~~|—<br>~~i~~|||
|Turn-On Delay Time<br>~~pT~~<br>~~=~~|tD(on)<br>~~SSS~~|—<br>~~SSS~~|3.4<br>~~SSS~~|—<br>~~ae~~|ns<br>~~ae~~|VGS= 10V, VDS= 30V,<br>RL= 150Ω, RG= 25Ω,<br>ID= 200mA<br>~~ae~~|
|Turn-On Rise Time<br>~~=~~|tr<br>~~SSS~~|—<br>~~SSS~~|3.4<br>~~SSS~~|—<br>~~ae~~|ns<br>~~ae~~||
|Turn-Off DelayTime<br>~~=~~|tD(off)<br>~~SSS~~|—<br>~~SSS~~|26.4<br>~~SSS~~|—<br>~~ae~~|ns<br>~~ae~~||
|Turn-Off Fall Time<br>~~=~~|tf<br>~~SSS~~|—<br>~~SSS~~|16.3<br>~~SSS~~|—<br>~~ae~~|ns<br>~~ae~~||



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

7. Device mounted on FR-4 PCB with minimum recommended pad layout, measured in t ≤ 10s. 

8. Repetitive rating, pulse width limited by junction temperature, 10µs pulse, duty cycle = 1%. 

9. Short duration pulse test used to minimize self-heating effect. 

10. Guaranteed by design. Not subject to production testing. 

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DMG1026UV Document number: DS35068 Rev. 8 - 2 

August 2016 © Diodes Incorporated 

**DMG1026UV** 

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1.0 1,000<br>VGS = 4.5V<br>VGS = 4.0V V DS  = 5V<br>0.8 any 3 V GS = 3.5V 800 /4a<br>VGS = 3.0V<br>VGS = 2.5V<br>0.60.4 WV 600400 || | TfL |<br>VGS = 2.0V TA = 150°C<br>0.2 200 T A  = 125°C<br>TA = 85°C TA = 25°C<br>VGS = 1.5V TA = -55°C<br>0 0<br>0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristic Figure 2  Typical Transfer Characteristic<br>3 5<br>V GS  = 4.5V<br>EEE 4 Se<br>2 TA = 150°C<br>LE EEE a<br>3<br>VGS = 4.5V T A  = 125°C<br>PU eee<br>1 VGS = 10V 2 T A  = 85°C<br>aa ne<br>TA = 25°C<br>1<br>EEE a TA = -55°C<br>0 0<br>0 LL 200 ETT 400 600 EE 800 1,000 0 a 200 400 600 800 1,000<br>ID, DRAIN-SOURCE CURRENT (mA) ID, DRAIN CURRENT (mA)<br>Figure 3  Typical On-Resistance  Figure 4 Typical On-Resistance<br>vs. Drain Current and Gate Voltage  vs. Drain Current and Temperature<br>2.5 3.0<br>2.5<br>2.0 TTL LLL. tty yyy<br>2.0<br>1.5<br>reer} = VGS = 4.5V<br>1.5 I D  = 200mA<br>1.0 V GS = 4.5V<br>ID = 200mA<br>1.0 V GS  = 10V<br>ID = 500mA<br>TT eet<br>0.5 IVD = 500mA GS = 10V lLrrr) 0.5 ee<br>0 ote 0 actin<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>«=  EEE<br>TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)<br>Figure 5 On-Resistance Variation with Temperature Figure 6 On-Resistance Variation with Temperature<br>D<br>, DRAIN CURRENT (mA)<br>I<br>)<br>,  DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>ID<br>DSON<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>, DRAIN-SOURCE<br>DSON<br>R<br>ON-RESISTANCE (NORMALIZED)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>**----- End of picture text -----**<br>


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DMG1026UV Document number: DS35068 Rev. 8 - 2 

August 2016 © Diodes Incorporated 

**DMG1026UV** [| 

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1.6 1,000<br>1.4<br>800<br>1.2<br>1.0 ID = 1mA 600 TA = 25°C<br>0.8 rePoE I D  = 250µA LLf eeFt ft _<br>0.6 SES 400 ee<br>0.4<br>200<br>0.2<br>0 0<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2<br>TA, AMBIENT TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 7 Gate Threshold Variation vs. Ambient Temperature Figure 8 Diode Forward Voltage vs. Current<br>100 a Ca OO 10,000 —__|<br>ee ee f = 1MHz a<br>ee ee ee 1,000 [I _ TA = 150 ° C<br>Ciss<br>eeee SS T A eee = 125° ee C ee<br>10 100<br>a _———————<br>ONi Coss enoo T A = 85°C<br>| C rss — | 10 JL} |__|<br>TA = 25°C<br>|| | | PF| |(7...)PeaA _|_}__|__|__|_|__es ||<br>1 1<br>0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 45 50<br>VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Typical Total Capacitance Figure 10 Typical Leakage Current<br>vs. Drain-Source Voltage<br>10 10<br>CO OO a OO QQ GO QA GO<br>ee ee Oe Oe Oe 0OOO<br>8 VID DS   800m= = 15VA 1 FretOS R Limited DS(on) PW = 10 Se µs<br>poEoeR ENS<br>pt NNN NTT TT<br>ET) NAAN EEN AN [TT]<br>6<br>DC<br>0.1 St eh PW = 10s ROK\ ANY<br>4 SSee ee PWP = 1s W  = 100ms EARSLINN SESETE)<br>StfT TT PW = 10msPW TASS  = 1ms ANRAIN Gilil<br>0.01 jp}Co _| {| }//}{{___{_}_}CSU||| PW = 100µs INAH<br>2 SSS eae<br>Tyimaxy = 150°C, Fe<br>ree HEHE<br>0 0.001 roll LT PATE ECA<br>0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100<br>Qg [, TOTAL GATE CHARGE ]  (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 Gate Charge Figure 12 SOA, Safe Operation Area<br>D<br>, DRAIN CURRENT (A)<br>I<br>, LEAKAGE CURRENT (nA)<br>IDSS<br>, SOURCE CURRENT (mA)<br>IS<br>C, CAPACITANCE (pF)<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br> GATE THRESHOLD VOLTAGE (V)<br>V<br>GS<br>**----- End of picture text -----**<br>


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DMG1026UV Document number: DS35068 Rev. 8 - 2 

August 2016 © Diodes Incorporated 

**DMG1026UV** 

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1<br>D = 0.7<br>Teer D = 0.5<br>D = 0.3<br>ean ee<br>0.1<br>D = 0.1<br>D = 0.05 D = 0.9<br>manner cele area eee R JA (t) = r(t) *  ne R JA<br>N D = 0.02 E, ee ee RJA = 220°C/W meal<br>0.01 oor D = 0.01 P(pk) t1 ot<br>ee D = 0.005 ee T J - T A t =2 P * R JA (t)<br>eT TH TTT EE ETI TIE ETI Duty Cycle, D = t1/t2 LHL]<br>D = Single Pulse<br>0.001 re rvvm LL E VIE LERMANVATTI ETT<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Figure 13 Transient Thermal Response<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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A<br>7<br>a Dim  Min SOT563 Max  Typ<br>B C A  0.15  0.30  0.20<br>B  1.10  1.25  1.20<br>"<br>C  1.55  1.70  1.60<br>D D  -  -  0.50<br>G  0.90 1.10 1.00<br>G<br>H  1.50 1.70 1.60<br>K  0.55 0.60 0.60<br>L  0.10 0.30 0.20<br>K M M  0.10  0.18  0.11<br>j 2 All Dimensions in mm<br>ie LO<br>H<br>Se) L fet<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

|||||||~~C2~~<br>~~C2~~<br>I~~K ae~~|~~C2~~<br>~~C2~~<br>I~~K ae~~|~~C2~~<br>~~C2~~<br>I~~K ae~~|~~C2~~<br>~~C2~~<br>I~~K ae~~|~~C2~~<br>~~C2~~<br>I~~K ae~~|~~C2~~<br>~~C2~~<br>I~~K ae~~|~~C2~~<br>~~C2~~<br>I~~K ae~~|~~C2~~<br>~~C2~~<br>I~~K ae~~||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||||||||||||||||||
|~~X~~<br>Z<br>Y<br>C1<br>G<br>~~|~~<br>|<br>~~Poor:~~<br>le<br>>|||||||||||||||||||||**Dimensions Value**<br>**Z**<br>**G**<br>**X**<br>**Y**<br>**C1**<br>**C2**|**Dimensions Value**|**Dimensions Value(in mm)**<br>2.2<br>1.2<br>0.375<br>0.5<br>1.7<br>0.5|



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DMG1026UV Document number: DS35068 Rev. 8 - 2 

August 2016 © Diodes Incorporated 

**DMG1026UV** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2016, Diodes Incorporated 

**www.diodes.com** 

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DMG1026UV Document number: DS35068 Rev. 8 - 2 

August 2016 © Diodes Incorporated