DMG1023UV-7

Dual MOSFET, P Channel, 20 V, 20 V, 1.03 A, 1.03 A, 0.75 ohm

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Manufacturer: DIODES INC.
Product type: Dual MOSFETs
Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-1.03A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 6Pins
Channel Type: P Channel
Product Range: -
Qualification: AEC-Q101
Transistor Case Style: SOT-563
Operating Temperature Max: 150°C
Power Dissipation N Channel: 530mW
Power Dissipation P Channel: 530mW
Drain Source Voltage Vds N Channel: 20V
Drain Source Voltage Vds P Channel: 20V
Continuous Drain Current Id N Channel: 1.03A
Continuous Drain Current Id P Channel: 1.03A
Drain Source On State Resistance N Channel: 0.75ohm
Drain Source On State Resistance P Channel: 0.75ohm

Delivery and price
Units per pack	5000
Price	0.106 €
Current stock	10+
Lead time	30 days

Datasheet

**DMG1023UV** @,. **DUAL P-CHANNEL ENHANCEMENT MODE MOSFET** sd 

## **Features** 

- Dual P-Channel MOSFET 

- Low On-Resistance 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- Ultra-Small Surface Mount Package 

- **ESD Protected Up To 3KV** 

## **Mechanical Data** 

   - Case: SOT563 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminal Connections: See Diagram Below 

   - Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 

   - Weight: 0.006 grams (approximate) 

- **Lead Free By Design/RoHS Compliant (Note 1)** 

- **Halogen and Antimony Free "Green" Device (Note 2)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

**==> picture [361 x 102] intentionally omitted <==**

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D2 G1 S1<br>SOT563<br>S2 G2 D1<br>a ee k<br>Top View  Bottom View  Top View<br>**----- End of picture text -----**<br>


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ESD PROTECTED TO 3kV<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 3) 

|**Ordering Informationg Information Information** (Note 3)|**Ordering Informationg Information Information** (Note 3)|**Ordering Informationg Information Information** (Note 3)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMG1023UV-7|SOT563|3,000 /Tape &Reel|
|DMG1023UV-13|SOT563|10,000 / Tape & Reel|



Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 

2. Diodes Inc.`s “Green” Policy can be found on our website at http://www.diodes.com 

3. For packaging details, go to our website at http://www.diodes.com. 

## **Marking Information** 

||||||||||**PA1**|**PA1**|**PA1**|**YM**|||PA1 = Product Type Marking Code<br>YM = Date Code Marking<br>Y = Year (ex: W = 2009)<br>M = Month (ex: 9 = September)|PA1 = Product Type Marking Code<br>YM = Date Code Marking<br>Y = Year (ex: W = 2009)<br>M = Month (ex: 9 = September)|||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Date Code Key<br>**Year**<br>**2008**<br>**Code**<br>V<br>~~{>}~~|||**2009**<br>W|||**2010**<br>X||||||**2011**<br>Y|||**2012**<br>**2013**<br>**2014**<br>Z<br>A<br>B|**2015**<br>C||**2015**||**2016**<br>D||**2017**<br>E|
|**Month**<br>**Jan**<br>**Code**<br>1<br>~~{>}~~|||**Feb**<br>2<br>~~|~~||**Mar**<br>3<br>~~—~~|||~~}~~||**Apr**<br>**May**<br>**Jun**<br>**Jul**<br>**Aug**<br>4<br>5<br>6<br>7<br>8<br>~~+}~~<br>~~}~~||||||**Sep**<br>9<br>~~|~~||**Oct**<br>O<br>~~—~~||**Nov**<br>**Dec**<br>N<br>D<br>~~}—_+~~|||



1 of 6 **www.diodes.com** 

DMG1023UV Document number: DS31975 Rev. 6 - 2 

April 2015 © Diodes Incorporated 

**DMG1023UV** 

## **Maximum Ratings** @TA = 25°C unless otherwise specified 

|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-20|V|
|Gate-Source Voltage|||VGSS|±6|V|
|Continuous Drain Current (Note 4) VGS= -4.5V|Steady<br>State|TA= 25°C<br>TA= 85°C|ID|-1.03<br>-0.68|A|
|Pulsed Drain Current(Note 5)|||IDM|-3|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation(Note 4)|PD|530|mW|
|Thermal Resistance,Junction to Ambient@TA= 25°C(Note 4)|RθJA|235|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



**Electrical Characteristics** @TA = 25°C unless otherwise specified 

||||||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~—~~|**Symbol**<br>~~—~~|**Min**<br>~~—~~|**Typ **<br>~~—~~|**Max**<br>~~—~~|**Unit**<br>~~—~~|**Test Condition**<br>~~—~~|
|**OFF CHARACTERISTICS(Note 6) **<br>~~—~~|||||||
|Drain-Source Breakdown Voltage<br>~~—~~|BVDSS<br>~~—~~|-20<br>~~—~~|-<br>~~—~~|-<br>~~—~~|V<br>~~—~~|VGS= 0V,ID= -250μA<br>~~—~~|
|Zero Gate Voltage Drain Current TJ= 25°C<br>~~—~~|IDSS<br>~~—~~|-<br>~~—~~|-<br>~~—~~|-100<br>~~—~~|nA<br>~~—~~|VDS= -20V,VGS= 0V<br>~~—~~|
|Gate-Source Leakage|IGSS|-|-|±2.0|μA|VGS= ±4.5V,VDS= 0V|
|**ON CHARACTERISTICS(Note 6) **|||||||
|Gate Threshold Voltage|VGS(th)|-0.5|-|-1.0|V|VDS= VGS,ID= -250μA|
|Static Drain-Source On-Resistance<br>~~bea~~|RDS (ON)<br>~~bea~~|-<br>~~bea~~|0.5<br>~~bea~~|0.75<br>~~bea~~|Ω<br>~~bea~~|VGS= -4.5V,ID= -430mA<br>~~bea~~|
||||0.7<br>~~bea~~|1.05<br>~~bea~~||VGS= -2.5V,ID= -300mA<br>~~bea~~|
||||1.0<br>~~bea~~|1.5<br>~~bea~~||VGS= -1.8V,ID= -150mA<br>~~bea~~|
||||-<br>~~bea~~|20<br>~~bea~~||VGS= -1.7V,ID= -100mA<br>~~bea~~|
||||-<br>~~bea~~|25<br>~~bea~~||VGS= -1.5V,ID= -100mA<br>~~bea~~|
|Forward Transfer Admittance||Yfs||-|0.9|-|S|VDS= -10V,ID= -250mA|
|Diode Forward Voltage|VSD||-0.8|-1.2|V|VGS= 0V,IS= -150mA|
|**DYNAMIC CHARACTERISTICS(Note 7)**|||||||
|Input Capacitance|Ciss|-|59.76|-|pF|VDS= -16V, VGS= 0V,<br>f = 1.0MHz|
|Output Capacitance|Coss|-|12.07|-|pF||
|Reverse Transfer Capacitance|Crss|-|6.36|-|pF||
|Total Gate Charge|Qg|-|622.4|-|pC|VGS= -4.5V, VDS= -10V,<br>ID= -250mA<br>~~ee~~|
|Gate-Source Charge|Qgs|-|100.3|-|pC||
|Gate-Drain Charge<br>~~——<——~~|Qgd|-|132.2|-<br>~~ee~~|pC<br>~~ee~~||
|Turn-On DelayTime<br>~~——<——~~|tD(on)|-|5.1|-<br>~~ee~~|ns<br>~~ee~~|VDD= -10V, VGS= -4.5V,<br>RL= 47Ω, RG= 10Ω,<br>ID= -200mA<br>~~ee~~|
|Turn-On Rise Time<br>~~——<——~~|tr|-|8.1|-<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off DelayTime<br>~~——<——~~|tD(off)|-|28.4|-<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~——<——~~|tf|-|20.7|-<br>~~ee~~|ns<br>~~ee~~||



Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout. 

5. Repetitive rating, pulse width limited by junction temperature. 

6. Short duration pulse test used to minimize self-heating effect. 

7. Guaranteed by design. Not subject to production testing. 

2 of 6 **www.diodes.com** 

DMG1023UV Document number: DS31975 Rev. 6 - 2 

April 2015 © Diodes Incorporated 

**DMG1023UV** 

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1.5 10<br>VGS = -8.0V<br>1.2 8 VDS = -5V<br>VGS = -4.5V<br>VGS = -3.0V<br>0.9 Sipzaneeee V GS  = -2.5V 6 on A<br>VGS = -2.0V<br>0.6 kK 4 OF<br>| aa fe<br>0.3 2 T A  = 150°C<br>VGS = -1.5V TA = 125°C TA = 85°C<br>VGS = -1.2V TA = 25°C<br>0 | yoA 0 fka ee TA = -55°C<br>0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristic Fig. 2  Typical Transfer Characteristic<br>1.6 1.0<br>VGS = -4.5V<br>1.4<br>0.8<br>1.2 SHAR P|<br>T A  = 150°C<br>1.0 V GS  = -1.8V 0.6 TA = 125 ° C<br>TA = 85°C<br>0.8 Aeea EGEEE—<br>VGS = -2.5V TA = 25°C<br>0.6 — 0.4 SS<br>T A  = -55°C<br>0.4 V GS  = -4.5V<br>0.2 EEE<br>0.2 ASS —————<br>0 ee 0 ee<br>0 0.3 0.6 0.9 1.2 1.5 0 0.3 0.6 0.9 1.2 1.5<br>-ID, DRAIN-SOURCE CURRENT (A) -ID, DRAIN CURRENT (A)<br>Fig. 3  Typical On-Resistance  Fig. 4 Typical On-Resistance<br>vs. Drain Current and Gate Voltage  vs. Drain Current and Temperature<br>1.71.5 tte LL 1.01.2 LEE<br>1.3 aa I VDGS  = -500mA  = -2.5V ZA 0.8 | IVD GS  = -500mA= tL -2.5V bryfe<br>1.1 VIGSD = -1.0A = -4.5V 0.6<br>0.9 ate 0.4 VGS = -4.5V I<br>ID = -1.0A<br>0.7 OO7 0.2 PeetET ete<br>0.5 0<br>PLE ELLE PLLEE ELL<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)<br>Fig. 5 On-Resistance Variation with Temperature<br>Fig. 6 On-Resistance Variation with Temperature<br>)<br>,  DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN-SOURCE<br>DSON<br>R<br>ON-RESISTANCE (NORMALIZED)<br>, DRAIN CURRENT (A)<br>D<br>-I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE<br>DSON ON-RESISTANCE (<br>R<br>, DRAIN CURRENT (A)<br>-I<br>D<br>**----- End of picture text -----**<br>


3 of 6 **www.diodes.com** 

DMG1023UV Document number: DS31975 Rev. 6 - 2 

April 2015 

© Diodes Incorporated 

**DMG1023UV** 

**==> picture [483 x 658] intentionally omitted <==**

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1.6 10<br>8<br>1.2<br>6<br>0.8 met—_—X_| I D = -1mA - PtPf ttttl ty T A  = 25°C ftey|<br>ID = -250µA 4<br>0.4<br>2<br>0 0<br>-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2<br>TA, AMBIENT TEMPERATURE (°C) -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>100 a a f = 1MHz 1,000 eS Se cc ccc |<br>Ld C iss | a  ( T A  = 150°C<br>-————— Ss + eee<br>T_T 100 ee ee ee<br>TA = 125°C<br>\N P| |<br>L ———— a<br>10 | Coss a GQ OO |<br>—_—— a ee<br>a<br>— Crss 10 ft<br>ee ee TA = 85°C<br>ee ee ee ee esoo T A  = 25°C<br>1 1<br>0 5 10 15 20 0 4 8 12 16 20<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Typical Total Capacitance Fig. 10 Typical Leakage Current vs. Drain-Source Voltage<br>1 SSS<br>Eteiim D D = 0.5= 0.7 amreaN me ckSSSttt tt3858080<br>D = 0.3<br>0.1 Un I meat 055=2-;,PN GATEAUTIIANAUUIVEMANIIVGRANUT/ONMIIILULA ELLE TIM LET<br>D = 0.1<br>e/a D = 0.9<br>D = 0.05 7 2 Hr TT R JA (t) = r(t) * R JA el<br>EG emo! A RJA = 260°C/W Coon<br>D = 0.02<br>OTe TTT TTL<br>0.01 UIseo D = 0.01  oe TU), P(pk) t1 FH<br>ef Ee t2<br>D = 0.005 2g a 8 TJ - TA = P * RJA(t) Ta<br>PE Duty Cycle, D = t 1 /t 2 maul<br>D = Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 11 Transient Thermal Response<br>C, CAPACITANCE (pF) , LEAKAGE CURRENT (nA)<br>DSS<br>-I<br>, GATE THRESHOLD VOLTAGE (V)<br>-V<br>GS(TH)<br>, SOURCE CURRENT (A)<br>-I<br>S<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


4 of 6 **www.diodes.com** 

DMG1023UV Document number: DS31975 Rev. 6 - 2 

April 2015 © Diodes Incorporated 

**DMG1023UV** 

## **Package Outline Dimensions** 

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A<br>4<br>17<br>B C<br>D<br>G<br>**----- End of picture text -----**<br>


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SOT563<br>B C Dim  Min  Max  Typ<br>A  0.15 0.30 0.20<br>B  1.10 1.25 1.20<br>C  1.55 1.70 1.60<br>D D  -  -  0.50<br>G G  0.90  1.10  1.00<br>H  1.50  1.70  1.60<br>K  0.55  0.60  0.60<br>K M L  0.10  0.30  0.20<br>M  0.10  0.18  0.11<br>All Dimensions in mm<br>H<br>tere) of L |<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

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C2 C2<br>I K ae<br>f G aa C1<br>Z<br>Y<br>foot<br>X<br>Ie >|<br>**----- End of picture text -----**<br>


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Dimensions Value (in mm)<br>Z  2.2<br>G  1.2<br>X  0.375<br>Y  0.5<br>C1  1.7<br>C2  0.5<br>**----- End of picture text -----**<br>


5 of 6 **www.diodes.com** 

DMG1023UV Document number: DS31975 Rev. 6 - 2 

April 2015 © Diodes Incorporated 

**DMG1023UV** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2012, Diodes Incorporated 

**www.diodes.com** 

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DMG1023UV Document number: DS31975 Rev. 6 - 2 

April 2015 © Diodes Incorporated

Updated at June 9, 2026

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