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DMG1016UDW-7
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 845 mA, 845 mA, 0.3 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: AEC-Q101
- Transistor Case Style: SOT-363
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 330mW
- Power Dissipation P Channel: 330mW
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 845mA
- Continuous Drain Current Id P Channel: 845mA
- Drain Source On State Resistance N Channel: 0.3ohm
- Drain Source On State Resistance P Channel: 0.3ohm
| Delivery and price | |
|---|---|
| Units per pack | 9000 |
| Price | 0.05 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **DMG1016UDW** & CC~*”d **COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET** ## **Product Summary** |**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**| |---|---|---|---| ||||| |**Device**|**BVDSS**|**RDS(ON)**|**ID @TA = +25°C**| |Q1|20V|0.45Ω@VGS= 4.5V|1066mA| |Q2|-20V|0.75Ω@VGS= -4.5V|-845mA| ## **Features and Benefits** - Low On-Resistance - Low Gate Threshold Voltage - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - Complementary Pair MOSFET - Ultra-Small Surface Mount Package - ESD Protected ## **Description** This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. ## **Applications** - Battery operated systems and solid-state relays - Drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc. - Power supply converter circuits - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** - **Halogen and Antimony Free. “Green” Device (Note 3)** - **For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at** - - **https://www.diodes.com/products/automotive/automotive products/.** - **This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.** **https://www.diodes.com/quality/product-definitions/** ## **Mechanical Data** - Package: SOT363 - Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 **e3** Terminal Connections: See Diagram Weight: 0.006 grams (Approximate) D1 G2 S2 Q1 Q2 S1 G1 D2 ESD PROTECTED Top View Top View Internal Schematic **Ordering Information** (Note 4) **Packing Part Number Compliance Package Qty. Carrier** ~~a~~ DMG1016UDW-7 Standard SOT363 3000 Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 1 of 12 **www.diodes.com** DMG1016UDW Document number: DS31860 Rev. 9 - 2 January 2022 © Diodes Incorporated **DMG1016UDW** **Marking Information** |Date CodeKey<br>**Year**<br>**2009**<br>**…**<br>**2022**<br>**2023**<br>**2024**<br>**2025**<br>**2026**<br>**2027**<br>**2028**<br>**2029**<br>**2030**<br>**2031**<br>**Code**<br>W<br>…<br>J<br>K<br>L<br>M<br>N<br>O<br>P<br>R<br>S<br>T<br>**Month**<br>**Jan**<br>**Feb**<br>**Mar**<br>**Apr **<br>**May**<br>**Jun**<br>**Jul**<br>**Aug**<br>**Sep**<br>**Oct**<br>**Nov**<br>**Dec**<br>**Code**<br>1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>O<br>N<br>D<br>**CA1**<br>**YM**<br>CA1 = Product Type Marking Code<br>YM or YM= Date Code Marking<br>Y or Y = Year (ex: J = 2022)<br>M = Month (ex: 9 = September)<br>~~a~~| |---| **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) **Characteristic Symbol Value Unit** Total Power Dissipation (Note 5 PD 330 mW Thermal Resistance, Junction to Ambient (Note 5) RJA 379 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C ~~——S~~ **Maximum Ratings N-CHANNEL – Q1** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratingsgss** **N-CHANNEL – Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **N-CHANNEL – Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **N-CHANNEL – Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **N-CHANNEL – Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **N-CHANNEL – Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **N-CHANNEL – Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---| ||||||| |**Characteristic**|||**Symbol**|**Value**|**Unit**| |Drain-Source Voltage|||VDSS|20|V| |Gate-Source Voltage|||VGSS|±6|V| |Continuous Drain Current (Note 5)|Steady<br>State|TA= +25°C<br>TA= +85°C|ID|1066<br>690|mA| |Pulsed Drain Current (10μs Pulse, DutyCycle = 1%)|||IDM|3.2|A| ## **Maximum Ratings P-CHANNEL – Q2** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratingsgss** **P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---| ||||||| |**Characteristic**|||**Symbol**|**Value**|**Unit**| |Drain-Source Voltage|||VDSS|-20|V| |Gate-Source Voltage|||VGSS|±6|V| |Continuous Drain Current (Note 5)|Steady<br>State|TA= +25°C<br>TA= +85°C|ID|-845<br>-548|mA| |Pulsed Drain Current (10μs Pulse, DutyCycle = 1%)|||IDM|-2.2|A| Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout. 2 of 12 **www.diodes.com** DMG1016UDW Document number: DS31860 Rev. 9 - 2 January 2022 © Diodes Incorporated **DMG1016UDW** |**Electrical Characteristics** **N-CHANNEL – Q1**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics** **N-CHANNEL – Q1**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics** **N-CHANNEL – Q1**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics** **N-CHANNEL – Q1**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics** **N-CHANNEL – Q1**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics** **N-CHANNEL – Q1**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics** **N-CHANNEL – Q1**(@TA= +25°C, unless otherwise specified.)| |---|---|---|---|---|---|---| |||||||| |**Characteristic**<br>~~DO~~|**Symbol**<br>~~DO~~|**Min**<br>~~DO~~|**Typ **<br>~~DO~~<br>~~GO~~|**Max**<br>~~DO~~<br>~~GO~~|**Unit**<br>~~DO~~|**Test Condition**<br>~~DO~~| |**OFF CHARACTERISTICS(Note 6) **<br>~~GO~~<br>~~ee~~||||||| |Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|20<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= 250μA<br>~~ee~~| |Zero Gate Voltage Drain Current @TC= +25°C<br>~~pO~~<br>~~po~~|= +25°C<br>IDSS<br>~~pO~~<br>|—<br>~~pO~~<br>|—<br>~~pO~~<br>|100<br>~~pO~~<br>|nA<br>~~pO~~<br>|VDS=20V, VGS= 0V<br>~~pO~~<br>| |Gate-Source Leakage<br>~~po~~|IGSS<br>|—<br>|—<br>|±1.0<br>|μA<br>|VGS= ±4.5V, VDS= 0V<br>| |**ON CHARACTERISTICS(Note 6) **<br>~~poa~~||||||| |Gate Threshold Voltage<br>~~a~~|VGS(TH)<br>~~a~~|0.5<br>~~a~~|—<br>~~a~~|1.0<br>~~a~~|V<br>~~a~~|VDS= VGS, ID= 250μA<br>~~a~~| |Static Drain-Source On-Resistance<br>~~=~~|RDS(ON)<br>~~=~~|—<br>~~=~~<br>~~|~~|0.3<br>~~=~~|0.45<br>~~=~~|Ω<br>~~=~~<br>~~Pp~~|VGS= 4.5V, ID= 600mA<br>~~=~~| ||||0.4<br>~~=~~<br>~~|~~<br>~~|~~|0.6<br>~~=~~||VGS= 2.5V, ID= 500mA<br>~~=~~<br>~~Pp~~| ||||0.5<br>~~=~~<br>~~|~~<br>~~|~~|0.75<br>~~=~~||VGS= 1.8V, ID= 350mA<br>~~=~~<br>~~Pp~~| |Forward Transfer Admittance<br>~~pO~~||Yfs|<br>~~pO~~|—<br>~~|~~<br>~~pO~~|1.4<br>~~|~~<br>~~|~~<br>~~pO~~|—<br>~~pO~~<br>~~GO~~|S<br>~~Pp~~<br>~~pO~~<br>~~GO~~|VDS= 10V, ID= 400mA<br>~~Pp~~<br>~~pO~~| |Diode Forward Voltage (Note 6)<br>~~GO~~|VSD<br>~~GO~~|—<br>~~GO~~|0.7<br>~~GO~~|1.2<br>~~GO~~<br>~~GO~~|V<br>~~GO~~<br>~~GO~~|VGS= 0V, IS= 150mA<br>~~GO~~| |**DYNAMIC CHARACTERISTICS (Note 7)**<br>~~GO~~||||||| |Input Capacitance<br>~~GO~~<br>~~OO~~|Ciss<br>~~GO~~<br>~~OO~~|—<br>~~GO~~<br>~~OO~~|60.67<br>~~GO~~<br>~~OO~~|—<br>~~GO~~<br>~~OO~~|pF<br>~~GO~~<br>~~OO~~|VDS= 10V, VGS= 0V,<br>f = 1.0MHz<br>~~OO~~| |Output Capacitance<br>~~OO~~|Coss<br>~~OO~~|—<br>~~OO~~|9.68<br>~~OO~~|—<br>~~OO~~|pF<br>~~OO~~|| |Reverse Transfer Capacitance<br>~~OO~~|Crss<br>~~OO~~|—<br>~~OO~~|5.37<br>~~OO~~|—<br>~~OO~~|pF<br>~~OO~~|| |Total Gate Charge<br>~~OO~~|Qg<br>~~OO~~|—<br>~~OO~~|736.6<br>~~OO~~|—<br>~~OO~~|nC<br>~~OO~~|VGS= 4.5V, VDS= 10V,<br>ID= 250mA<br>~~OO~~<br>~~55==—ae~~| |Gate-Source Charge<br>~~CG~~|Qgs<br>~~CG~~|—<br>~~CG~~|93.6<br>~~CG~~|—<br>~~CG~~|nC<br>~~CG~~|| |Gate-Drain Charge<br>~~SSS~~|Qgd<br>~~55==—ae~~|—<br>~~55==—ae~~|116.6<br>~~55==—ae~~|—<br>~~55==—ae~~|nC<br>~~55==—ae~~|| |Turn-On DelayTime<br>~~SSS~~|tD(ON)<br>~~55==—ae~~|—<br>~~55==—ae~~|5.1<br>~~55==—ae~~|—<br>~~55==—ae~~|ns<br>~~55==—ae~~|VDD= 10V, VGS= 4.5V,<br>RL= 47Ω, RG= 10Ω<br>~~55==—ae~~| |Turn-On Rise Time<br>~~SSS~~|tR<br>~~55==—ae~~|—<br>~~55==—ae~~|7.4<br>~~55==—ae~~|—<br>~~55==—ae~~|ns<br>~~55==—ae~~|| |Turn-Off DelayTime<br>~~SSS~~|tD(OFF)<br>~~55==—ae~~|—<br>~~55==—ae~~|26.7<br>~~55==—ae~~|—<br>~~55==—ae~~|ns<br>~~55==—ae~~|| |Turn-Off Fall Time<br>~~SSS~~|tF<br>~~55==—ae~~|—<br>~~55==—ae~~|12.3<br>~~55==—ae~~|—<br>~~55==—ae~~|ns<br>~~55==—ae~~|| 3 of 12 **www.diodes.com** DMG1016UDW Document number: DS31860 Rev. 9 - 2 January 2022 © Diodes Incorporated **DMG1016UDW** ## **N-CHANNEL – Q1** **==> picture [522 x 657] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0 1.0<br>VGS = 8.0V<br>VGS = 4.5V<br>(Faldo 0.8 0.8<br>[A)] (T<br>0.6 | VGS = 3.0V =F [N] RE 0.6 eee<br>VGS = 2.5V coon RU a a<br>VGS = 2.0V C<br>0.4 VGS = 1.5V [IN] RA 0.4<br>D<br>F o<br>, D<br>I<br>T = 150°CA<br>0.2 |LEE VGS = 1.2V 0.2 f T = 125°CA e T = 25°CA T = 85°CA<br>0 PLE ELLE 0 fr T = -55°CA<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 2<br>VDS, DRAIN-SOURCE VOLTAGE (V) V , GATE-SOURCE VOLTAGE (V)GS<br>Fig. 2 Typical Transfer Characteristic<br>Fig. 1 Typical Output Characteristic<br>0.8 ) 0.5<br>(<br>0.7<br>N [CE] 0.4 T = 150°CA<br>T [A]<br>0.6 I [S] S T = 125°CA<br>0.5 [RE] T = 85°CA<br>0.3<br>O [N-]<br>0.4 VGS = 1.8V T = 25°CA<br>0.3 V GS = 2.5V O [URCE] 0.2<br>[S] T = -55°CA<br>VGS = 4.5V I [N-]<br>0.2<br>D [RA]<br>0.1<br>0.1 , )<br>O [N]<br>(S<br>D<br>0 R 0<br>0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0<br>ID, DRAIN-SOURCE CURRENT (A) I , DRAIN CURRENT (A)D<br>Fig. 3 Typical On-Resistance Fig. 4 Typical On-Resistance<br>vs. Drain Current and Gate Voltage vs. Drain Current and Temperature<br>1.7 0.8<br>1.5<br>TTT<br>0.6<br>1.3<br>CO<br>VGS = 2.5V<br>1.1 0.4 I D = 250mA<br>COE<br>VGS = 4.5V<br>0.9 ID = 500mA<br>VGS = 4.5V<br>0.2 ID = 500mA<br>eer VGS = 2.5V r r<br>0.7 I D = 250mA<br>0.5 atCCEe 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE ((°C)癈 ) TA, AMBIENT TEMPERATURE ((°C)癈 )<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>ID , DRAIN CURRENT (A)<br>ID<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DSON<br>)<br>, DRAIN-SOURCE<br>ON-RESISTANCE (<br>R<br>DSON<br>**----- End of picture text -----**<br> 4 of 12 **www.diodes.com** DMG1016UDW Document number: DS31860 Rev. 9 - 2 January 2022 © Diodes Incorporated **DMG1016UDW** ## BIOCDES. ## **N-CHANNEL – Q1** (continued) **==> picture [488 x 649] intentionally omitted <==** **----- Start of picture text -----**<br> 1.6 1.0<br>0.8<br>1.2<br>T = 25°CA<br>0.6<br>0.8 tt I = 1mAD<br>0.4<br>I = 250µAD<br>0.4<br>0.2<br>0 ELL EL 0 coe<br>-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2<br>T , AMBIENT TEMPERATURE (°C)A V , SOURCE-DRAIN VOLTAGE (V)SD<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>100 1,000<br>f =1MHz<br>a C iss T = 150°CA<br>\a 100 T = 125°CA |<br>———a ——<br>a<br>10 Coss a<br>Se G C<br>ee ee<br>a Crss | 10 } T = 85°CA<br>[sdNN [ ie e<br>ee — —— T = 25°CA<br>1 P| | fl 1 2 ——_..—~«S<br>0 5 10 15 20 0 4 8 12 16 20<br>VDS, DRAIN-SOURCE VOLTAGE (V) V , DRAIN-SOURCE VOLTAGE (V) DS<br>Fig. 9 Typical Total Capacitance Fig. 10 Typical Leakage Current vs. Drain-Source Voltage<br>10<br>PW=100µs<br>ee R LIMITED<br>DS(ON)<br>BO SE il<br>pet NE LAT<br>1 20sSB<br>Yu” | TT NERANYPN TT<br>PW=1ms<br>RK Py<br>0.1 PW=10ms<br>PW=100ms<br>0.01 Ee TTJ(MAX)C=25℃=150℃ PW=1s P eee) W=10s TDWNNASON DC PeLUI<br>Single Pulse<br>DUT on 1*MRP board eee<br>VGS=4.5V eelll<br>0.001<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. SOA, Safe Operation Area<br>C, CAPACITANCE (pF)<br>, SOURCE CURRENT (A)<br>IS<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, LEAKAGE CURRENT (nA)<br>IDSS<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> 5 of 12 **www.diodes.com** DMG1016UDW Document number: DS31860 Rev. 9 - 2 January 2022 © Diodes Incorporated **DMG1016UDW** **==> picture [383 x 205] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>SsPN D = 0.7 SSSrrStH<br>PP D = 0.5 COrite aeTNee rrcl TT TET TT<br>D = 0.3 CE TTT Neri TT TE EE<br>0.1 ANUE LUI er TIEIECINE TTAIN ETE TE<br>D = 0.1<br>D = 0.9<br>EH et TE FEE<br>D = 0.05<br>EaST7Te A TT RJA(t) = r(t) * RJA meanilll<br>D = 0.02 R JA = 260 260°C/W 癈 /W<br>SEE MMAR OALIOMAAIIMT al<br>0.01 PL D = 0.01 LACIE ECE IN P(pk) mili<br>NE esis accel eee eee t1 eco<br>coeLR D = 0.005 AeHE I -H TJ - T ars A = P t 2 * RJA(t) TEEall<br>OC Duty Cycle, D = t 1 /t 2 mmanilll<br>D = Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 1 21 Transient Thermal Response<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> 6 of 12 **www.diodes.com** DMG1016UDW Document number: DS31860 Rev. 9 - 2 January 2022 © Diodes Incorporated **DMG1016UDW** **Electrical Characteristics P-CHANNEL – Q2** (@TA = +25°C, unless otherwise specified.) **==> picture [520 x 320] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---| |R|Characteristic|Symbol|N|D|Min|OU|Typ|(OS|Max|(OD|Unit|(OU|Test Condition| |OFF CHARACTERISTICS (Note 6)| |ee|Drain-Source Breakdown Voltage|BVDSS|-20|—|—|V|VGS = 0V, ID = -250μA| |I|Zero Gate Voltage Drain Current @TC= +25°C|I|IDSS|—|ID|—|S(O|-100|nA|VDS = -20V, VGS = 0V| |I|Gate-Source Leakage|IN|IGSS|UD|—|I|—|±2.0|DOO|μA|VGS = ±4.5V, VDS = 0V| |ON CHARACTERISTICS (Note 6)| |ee|Gate Threshold Voltage|VGS(TH)|-0.5|—|-1.0|V|VDS = VGS, ID = -250μA| |0.5|0.75|VGS = -4.5V, ID = -430mA| |||eT|PO| |Static Drain-Source On-Resistance|RDS(ON)|—|0.7|1.05|Ω|VGS = -2.5V, ID = -300mA| |eS|1.0|1.5|VGS = -1.8V, ID = -150mA| |I|Forward Transfer Admittance|I||Yfs||I|—|OS|0.9|—|S|VDS = -10V, ID = -250mA| |I|Diode Forward Voltage (Note 6)|I|VSD|—|ID UD|-0.8|-1.2|(OO|V|VGS = 0V, IS = -150mA| |DYNAMIC CHARACTERISTICS (Note 7)| |nD|Input Capacitance|Ciss|—|59.76|—|pF| |Output Capacitance|Coss|—|12.07|—|pF|VDS = -16V, VGS = 0V,| |f = 1.0MHz| |Reverse Transfer Capacitance|Crss|—|6.36|—|pF| |ee|Total Gate Charge|Qg|—|622.4|—|pC| |||Gate-Source Charge|Qgs|—|100.3|—|pC|VGS = -4.5V, VDS = -10V,| |ID = -250mA| |Gate-Drain Charge|Qgd|—|132.2|—|pC| |Turn-On Delay Time|tD(ON)|—|5.1|—|ns| |Turn-On Rise Time|tR|—|8.1|—|ns|VDS = -10V, VGS = -4.5V,| |Turn-Off Delay Time|tD(OFF)|—|28.4|—|ns|RG = 10Ω, RL = 47Ω| |Turn-Off Fall Time|tF|—|20.72|—|ns| |———|eee| |Notes:|6. Short duration pulse test used to minimize self-heating effect.| |7. Guaranteed by design. Not subject to production testing| **----- End of picture text -----**<br> 7 of 12 **www.diodes.com** DMG1016UDW Document number: DS31860 Rev. 9 - 2 January 2022 © Diodes Incorporated **DMG1016UDW** ## **P-CHANNEL – Q2** **==> picture [477 x 665] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0 VGS = -8.0V<br>V GS = -4.5V 1.0<br>V = -5VDS<br>0.8<br>0.8<br>VGS = -3.0V<br>0.6 ft|| aan VGS = -2.5V 0.6 o p f<br>feo VGS = -2.0V ]<br>0.4 | ae fe<br>0.4<br>je fo<br>0.2 V GS = -1.5V 0.2 T = 150°CA<br>yo T = 125°CA | T = 85°CA<br>a y T = 25°CA<br>0 T = -55°CA<br>a 0 yf<br>0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5<br>0 0.5 1.0 1.5 2.0 2.5 3.0<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -V , GATE-SOURCE VOLTAGE (V)GS<br>Fig. Fig. 3 1 2 Typical Output Characteristic Fig. 14 Typical Transfer Characteristic<br>1.6 1.0<br>1.4 ee ee a V = -4.5VGS<br>0.8<br>1.2 a ae T = 150°CA<br>VGS = -1.8V<br>1.0 Py,| | T = 125°CA<br>0.6<br>T = 85°CA<br>0.8 ee<br>T = 25°CA<br>VGS = -2.5V 0.4<br>0.6<br>T = -55°CA<br>0.4 Te V GS = -4.5V y<br>0.2<br>0.2<br>Cf Tl<br>0 0<br>0 | 0.2 | 0.4 | 0.6 |fl 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0<br>-ID, DRAIN-SOURCE CURRENT (A) -I , DRAIN CURRENT (A)D<br>Fig. 14 Typical On-Resistance Fig. 15 Fig. 16 Typical On-Resistance<br>vs. Drain Current and Gate Voltage vs. Drain Current and Temperature<br>1.7 1.0<br>1.5 Stee 0.8 er<br>VGS = -2.5V<br>1.3 ID = -250mA<br>eRe 0.6 eee<br>1.1<br>BEEEPZan VGS = -4.5V 0.4 oP VGS = -4.5V ann<br>0.9 ID = -500mA ID = -500mA<br>0.7 ae VGS = -2.5V 0.2 ee<br>ID = -250mA<br>0.5 eat 0<br>-50 -25 0 25 PT 50 75 ET 100 125 150 -50 LETT -25 0 25 TAT 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE ( °C癈 ) TA, AMBIENT TEMPERATURE ( 癈°C )<br>FiFi g. 1 6 On-Resistance Variation with Temperature7 Fig. Fig. 8 1 7 On-Resistance Variation with Temperature<br>, DRAIN-SOURCE<br>DSON<br>R<br>ON-RESISTANCE (NORMALIZED)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DSON<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, DRAIN CURRENT (A)<br>D<br>-I<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> 8 of 12 DMG1016UDW Document number: DS31860 Rev. 9 - 2 January 2022 © Diodes Incorporated **www.diodes.com** **DMG1016UDW** ~~7~~ ## DIODES ## **P-CHANNEL – Q2** (continued) **==> picture [516 x 652] intentionally omitted <==** **----- Start of picture text -----**<br> 1.6 1.0<br>0.8<br>1.2<br>T = 25°CA<br>0.6<br>0.8 I = -1mAD<br>0.4<br>I = -250µAD<br>0.4<br>0.2<br>0 0 YELL<br>-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2<br>T , AMBIENT TEMPERATURE (°C)A -V , SOURCE-DRAIN VOLTAGE (V)SD<br>Fig. 19 Gate Threshold Variation vs. Ambient Temperature Fig. 20 Diode Forward Voltage vs. Current<br>100 a Oa 1,000 T T<br>f =1MHz<br>T = 150°CA<br>[id| C iss [sdJ } }<br>100 T = 125°CA<br>10 Coss<br>a ;<br>Crss<br>a<br>a 10 | T = 85°CA<br>T = 25°CA<br>1 1<br>0 5 10 15 20 0 4 8 12 16 20<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -V , DRAIN-SOURCE VOLTAGE (V) DS<br>FigFig . 2 0 Typical Total Capacitance1 Fig. 22 Typical Leakage Current<br>10 vs. Drain-Source Voltage<br>RDS(ON) LIMITED eee PW=100µs<br>pT ete LT<br>1 eT NTT<br>— SOR<br>PW=1ms Sena Mall<br>0.1 PW=10ms<br>PW=100ms<br>Ey> RRR<br>PW=1s LETS<br>0.01 TJ(MAX)=150℃ P et W=10s NS<br>TC=25℃ Sosa DC ase<br>Single Pulse SS<br>DUT on 1*MRP board Ree ll<br>VGS= -4.5V<br>EET ELIT<br>0.001<br>0.1 1 10 100<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 23. SOA, Safe Operation Area<br>, SOURCE CURRENT (A)<br>S<br>, GATE THRESHOLD VOLTAGE (V) -I<br>GS(TH)<br>-V<br>, LEAKAGE CURRENT (nA)<br>DSS<br>-I<br>C, CAPACITANCE (pF)<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br> 9 of 12 **www.diodes.com** DMG1016UDW Document number: DS31860 Rev. 9 - 2 January 2022 © Diodes Incorporated **DMG1016UDW** **==> picture [397 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> 1 eeee oe Sl<br>eten<br>Ne D = 0.7<br>D = 0.5<br>RESN TT ee a<br>D = 0.3 a cn|<br>0.1 ATNoNLTT TIME ETT LI LUT<br>D = 0.1<br>Eo See D = 0.9<br>eAa D = 0.05 ce: aPR R JA (t) = r(t) * R JA TTT<br>Ht ge RJA = 260260癈°C/W/W eal<br>ee D = 0.02 aa ill<br>0.01 pePAiif D = 0.01 [ibe TTA 7AR | ametTTtT Tri emPPLIytIE ET P(pk) }«—__>| t1 t2 PTeeeersollTToeTry TT<br>ERR D = 0.005 = [0] [ee] 0 EE0 0HK -H1 Duty Cycle, D = tTJ - TA = P * RJA 1 /t(t) 2 mealeen<br>D = Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>FiFi g. 2 2 Transient Thermal Response4<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> 10 of 12 **www.diodes.com** DMG1016UDW Document number: DS31860 Rev. 9 - 2 January 2022 © Diodes Incorporated **DMG1016UDW** ## **Package Outline Dimensions** Please see http://www.diodes.com/package-outlines.html for the latest version. ## **SOT363** **==> picture [420 x 217] intentionally omitted <==** **----- Start of picture text -----**<br> E Toy E1 SOT363<br>Dim Min Max Typ<br>A1 0.00 0.10 0.05<br>A2 0.90 1.00 0.95<br>b 0.10 0.30 0.25<br>c 0.10 0.22 0.11<br>F<br>fel b D 1.80 2.20 2.15<br>E 2.00 2.20 2.10<br>E1 1.15 1.35 1.30<br>D<br>e 0.650 BSC<br>F 0.40 0.45 0.425<br>L 0.25 0.40 0.30<br>a 0° 8° --<br>A2<br>All Dimensions in mm<br>c a<br>A1 e L<br>**----- End of picture text -----**<br> ## **Suggested Pad Layout** Please see http://www.diodes.com/package-outlines.html for the latest version. **SOT363** **==> picture [141 x 145] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>Y1 p ti, G<br>Y<br>auii X ing<br>**----- End of picture text -----**<br> |**Dimensions**|**Value**<br>**(in mm)**| |---|---| |**C**|**()**<br>0.650| |**G**|1.300| |**X**|0.420| |**Y**|0.600| |**Y1**|2.500| 11 of 12 **www.diodes.com** DMG1016UDW Document number: DS31860 Rev. 9 - 2 January 2022 © Diodes Incorporated **DMG1016UDW** ## **IMPORTANT NOTICE** 1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. Copyright © 2022 Diodes Incorporated **www.diodes.com** 12 of 12 **www.diodes.com** DMG1016UDW Document number: DS31860 Rev. 9 - 2 January 2022 © Diodes Incorporated
Updated at June 9, 2026
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