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DMC67D8UFDBQ-7
Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 390 mA, 390 mA, 4 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: AEC-Q101
- Transistor Case Style: U-DFN2020
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 890mW
- Power Dissipation P Channel: 890mW
- Drain Source Voltage Vds N Channel: 60V
- Drain Source Voltage Vds P Channel: 60V
- Continuous Drain Current Id N Channel: 390mA
- Continuous Drain Current Id P Channel: 390mA
- Drain Source On State Resistance N Channel: 4ohm
- Drain Source On State Resistance P Channel: 0.072ohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.251 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**DMC67D8UFDBQ** [>
## **COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET**
## **Product Summary**
|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|---|
|||||
|**Device**<br>Q1<br>N-Channel<br>Q2<br>P-Channel|**V(BR)DSS**|**RDS(ON) Max**|**ID Max**<br>**TA = +25°C**|
||60V|4.0Ω@VGS= 10V|0.39A|
|||4.1Ω@VGS= 5V|0.38A|
|||4.2Ω@VGS= 4V|0.37A|
||-20V|72mΩ@VGS= -4.5 V|-2.9A|
|||108mΩ@VGS= -2.7V|-2.3A|
|||123mΩ@VGS= -2.5V|-2.2A|
## **Features**
- Low On-Resistance
- Low Input Capacitance
- Low Profile, 0.6mm Maximum Height
- **ESD Protected Gate**
- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)**
- **Halogen and Antimony Free. “Green” Device (Note 3)**
- **Qualified to AEC-Q101 Standards for High Reliability**
- **PPAP Capable (Note 4)**
## **Description**
This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in:
## **Mechanical Data**
- Case: U-DFN2020-6 Type B
- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Load Switch
- Terminals: Finish—NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e4**
- Terminals Connections: See Diagram Below
- Weight: 0.0065 grams (Approximate)
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U-DFN2020-6<br>D1<br>Type B<br>S2<br>G2<br>D2<br>D1<br>G1<br>D1<br>D2<br>G1<br>ESD PROTECTED (B Pin1 S1 N-CHANNEL MOSFET & Gate Protection Diode S1 -& P-CHANNEL MOSFET<br>Bottom View<br>Internal Schematic<br>g Information Information (Note 5)<br>Part Number Case Packaging<br>DMC67D8UFDBQ-7 U-DFN2020-6 Type B 3000/Tape & Reel<br>DMC67D8UFDBQ-13 U-DFN2020-6 Type B 10,000/Tape & Reel<br>**----- End of picture text -----**<br>
## **Ordering Information Information** (Note 5)
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
Notes:
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
## **Marking Information**
7D = Product Type Marking Code YWX = Date Code Marking Y = Year (ex: 9 = 2019) W = Week (ex: a = week 27; z represents week 52 and 53) X = Internal code (ex: U = Monday)
|Date Code Key|
|---|
|**Year**<br>**2017**<br>**2018**<br>**2019**<br>**2020**<br>**2021**<br>**2022**<br>**2023**<br>**2024**<br>**2025**|
|**Code**<br>7<br>8<br>9<br>0<br>1<br>2<br>3<br>4<br>5|
|**Week**<br>**1-26**<br>**27-52**<br>**53**<br>**Code**<br>A-Z<br>a-z<br>z<br>~~——————————————————————~~|
|**Internal Code**<br>**Sun**<br>**Mon**<br>**Tue**<br>**Wed**<br>**Thu**<br>**Fri**<br>**Sat**<br>**Code**<br>T<br>U<br>V<br>W<br>X<br>Y<br>Z<br>~~——————————————~~|
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**DMC67D8UFDBQ**
**Maximum Ratings** (@TA = +25°C, unless otherwise specified.)
|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|||**Symbol**|**Q1**<br>**N-Channel**|**Q2**<br>**P-Channel**|**Unit**|
|Drain-Source Voltage|||VDSS|60|-20|V|
|Gate-Source Voltage|||VGSS|±20|±12|V|
|Continuous Drain Current (Note 7)<br>N-Channel: VGS= 10V<br>P-Channel: VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|0.39<br>0.31|-2.9<br>-2.3|A|
|Maximum Continuous Body Diode Forward Current (Note 7)|||IS|0.39|-2.9|A|
|Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)|||IDM|0.8|-20|A|
|Pulsed Source Current (10µs Pulse, DutyCycle = 1%)|||ISM|-0.8|-20|A|
## **Thermal Characteristics**
|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 6)|TA= +25°C|PD|0.58|W|
|Thermal Resistance,Junction to Ambient(Note 6)|SteadyState|RϴJA|215|°C/W|
|Total Power Dissipation(Note 7)|TA= +25°C|PD|0.89|W|
|Thermal Resistance,Junction to Ambient(Note 7)|SteadyState|RϴJA|140|°C/W|
|Thermal Resistance,Junction to Case(Note 7)||RϴJC|35||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|
## **Electrical Characteristics: Q1 N-Channel** (@ TA = +25°C, unless otherwise specified.)
|**Electrical Characteristics: Q1** **N-Channel**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics: Q1** **N-Channel**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics: Q1** **N-Channel**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics: Q1** **N-Channel**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics: Q1** **N-Channel**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics: Q1** **N-Channel**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics: Q1** **N-Channel**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 8)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|60|—|—|V|VGS= 0V,ID= 10µA|
|Zero Gate Voltage Drain Current|IDSS|—|—|1.0|µA|VDS= 60V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±10|µA|VGS= ±20V,VDS= 0V|
|**ON CHARACTERISTICS(Note 8)**|||||||
|Gate Threshold Voltage|VGS(TH)|1.0|—|2.5|V|VDS= VGS,ID= 250μA|
|Static Drain-Source On-Resistance|RDS(ON)|—|1.7<br>1.6<br>1.8|4.0<br>4.1<br>4.2|Ω|VGS= 10V,ID= 0.5A|
|||||||VGS= 5V,ID= 0.2A|
|||||||VGS= 4V,ID= 0.2A|
|Diode Forward Voltage|VSD|—|0.8|1.1|V|VGS= 0V,IS= 115mA|
|**DYNAMIC CHARACTERISTICS(Note 9)**|||||||
|Input Capacitance<br>~~—~~|Ciss<br>~~—~~|—<br>~~—~~|41<br>~~—~~|—<br>~~—~~|pF<br>~~—~~|VDS= 25V, VGS= 0V<br>f = 1.0MHz<br>~~—~~|
|Output Capacitance<br>~~—~~|Coss<br>~~—~~|—<br>~~—~~|4.4<br>~~—~~|—<br>~~—~~|pF<br>~~—~~||
|Reverse Transfer Capacitance<br>~~—~~|Crss<br>~~—~~|—<br>~~—~~|2.6<br>~~—~~|—<br>~~—~~|pF<br>~~—~~||
|Gate Resistance<br>~~—~~|Rg<br>~~—~~|—<br>~~—~~|900<br>~~—~~|—<br>~~—~~|Ω<br>~~—~~|f = 1MHz,VGS= 0V,VDS= 0V<br>~~—~~|
|Total Gate Charge|Qg|—|0.4|—|pC|VGS= 4.5V, VDS= 10V,<br>ID= 250mA|
|Gate-Source Charge|Qgs|—|0.2|—|pC||
|Gate-Drain Charge|Qgd|—|0.1|—|pC||
|Turn-On DelayTime|tD(ON)|—|3.7|—|ns|VDD= 30V, VGS= 10V,<br>Rg= 25Ω, ID= 200mA|
|Turn-On Rise Time|tR|—|3.6|—|ns||
|Turn-Off DelayTime|tD(OFF)|—|102|—|ns||
|Turn-Off Fall Time|tF|—|22|—|ns||
|Reverse RecoveryTime|tRR|—|20|—|ns|IF= 1A,di/dt = 100A/µs|
|Reverse RecoveryCharge|QRR|—|7.9|—|nC|IF= 1A,di/dt = 100A/µs|
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## **Electrical Characteristics: Q2 P-Channel** (@ TA = +25°C, unless otherwise specified.)
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|---|---|---|---|---|---|---|
|**OFF CHARACTERISTICS(Note 8)**<br>~~——————~~|||||||
|Drain-Source Breakdown Voltage<br>~~——————~~|BVDSS<br>~~——————~~|-20<br>~~——————~~|—<br>~~——————~~|—<br>~~——————~~|V<br>~~——————~~|ID= -250µA, VGS= 0V<br>~~——————~~|
|Zero Gate Voltage Drain Current<br>~~————————~~|IDSS<br>~~————————~~|—<br>~~————————~~|—<br>~~————————~~|-1<br>~~————————~~|µA<br>~~————————~~|VDS= -20V, VGS= 0V<br>~~————————~~|
|Gate-BodyLeakage Current<br>~~————————~~|IGSS<br>~~————————~~|—<br>~~————————~~|—<br>~~————————~~|±100<br>~~————————~~|nA<br>~~————————~~|VDS= 0V, VGS= ±12V<br>~~————————~~|
|**ON CHARACTERISTICS(Note 8)**|||||||
|Gate Threshold Voltage<br>~~pf~~|VGS(th)<br>~~pf~~<br>~~EE~~|-0.6<br>~~pf~~<br>~~EE~~|—<br>~~pf~~<br>~~EEET~~|-1.25<br>~~pf~~<br>~~ET~~|V<br>~~pf~~<br>~~ET~~|VDS= VGS, ID= -250µA<br>~~pf~~|
|Static Drain-Source On-Resistance<br>~~po~~|RDS(ON)<br>~~po~~<br>~~EE~~|—<br>~~po~~<br>~~EE~~|51<br>87<br>99<br>~~po~~<br>~~EEET~~|72<br>108<br>123<br>~~po~~<br>~~ET~~|mΩ<br>~~po~~<br>~~ET~~|VGS= -4.5V, ID= -3.5A<br>VGS= -2.7V, ID= -3.0A<br>VGS= -2.5V,ID= -2.6A<br>~~po~~|
|Diode Forward Voltage<br>~~pf~~|VSD<br>~~EE~~<br>~~pf~~|—<br>~~EE~~<br>~~pf~~|-0.79<br>~~EE ET~~<br>~~pf~~|-1.26<br>~~ET~~<br>~~pf~~|V<br>~~ET~~<br>~~pf~~|IS= -1.7A, VGS= 0V<br>~~pf~~|
|**DYNAMIC PARAMETERS(Note 9)**<br>~~pf~~<br>~~——————~~<br>~~——~~|||||||
|Total Gate Charge<br>~~——————~~<br>~~——~~|Qg<br>~~——————~~|—<br>~~——————~~|7.3<br>~~——————~~|—<br>~~——————~~|nC<br>~~——————~~|VGS= -4.5V, VDS= -10V, ID= -3.0A<br>~~——————~~|
|Gate-Source Charge<br>~~——~~|Qgs|—|2.0|—|nC|VGS= -4.5V, VDS= -10V, ID= -3.0A|
|Gate-Drain Charge<br>~~——~~<br>~~—_——~~|Qgd<br>~~—_——~~|—|1.9|—<br>~~e~~|nC<br>~~e~~|VGS= -4.5V, VDS= -10V, ID= -3.0A<br>~~eee~~|
|Turn-On DelayTime<br>~~——~~<br>~~a~~<br>~~—_——~~|tD(on)<br>~~a~~<br>~~—_——~~|—<br>~~a~~|12<br>~~a~~|—<br>~~a~~<br>~~e~~|ns<br>~~a~~<br>~~e~~|VDS= -10V, VGS= -4.5V,<br>RL= 10Ω, RG= 6Ω<br>~~eee~~<br>~~eee~~|
|Turn-On Rise Time<br>~~——~~<br>~~a~~<br>~~a~~<br>~~—_——~~|tr<br>~~a~~<br>~~a~~<br>~~—_——~~|—<br>~~a~~<br>~~a~~|20<br>~~a~~<br>~~a~~|—<br>~~a~~<br>~~a~~<br>~~e~~|ns<br>~~a~~<br>~~a~~<br>~~e~~||
|Turn-Off DelayTime<br>~~—_——~~|tD(off)<br>~~—_——~~|—|38|—<br>~~e~~|ns<br>~~e~~||
|Turn-Off Fall Time<br>~~—_——~~<br>~~——_—_——~~|tf<br>~~—_——~~|—|41|—<br>~~e~~<br>~~eee~~|ns<br>~~e~~<br>~~eee~~||
|Input Capacitance<br>~~—_——~~<br>~~——_—_——~~|Ciss<br>~~—_——~~|—|443|—<br>~~e~~<br>~~eee~~|pF<br>~~e~~<br>~~eee~~|VDS= -16V, VGS= 0V<br>f = 1.0MHz<br>~~eee~~<br>~~eee~~|
|Output Capacitance<br>~~—_——~~<br>~~——_—_——~~|Coss<br>~~—_——~~|—|128|—<br>~~e~~<br>~~eee~~|pF<br>~~e~~<br>~~eee~~||
|Reverse Transfer Capacitance<br>~~——_—_——~~|Crss|—|101|—<br>~~eee~~|pF<br>~~eee~~||
7. Device mounted on FR-4 substrate PCB, 2oz copper, with 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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**DMC67D8UFDBQ** [|
1 mM co R P o R AT 1 9 D LrOLI-9. **Typical Characteristics** : **N-Channel**
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1 mM co R P o R AT & D LIDS.
**DMC67D8UFDBQ** [|
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1<br>RLimitedDS(on) PW = 100µs<br>a ae<br>a See ee<br>a INN ANUEN<br>DC<br>oR<br>0.1<br>PW = 10s “ISR ESAS<br>= DASAScN ANNE<br>PW = 1s ey AA AS een) Ge, Se<br>j PW = 100ms | TALL SKS So NEAT<br>|| PW = 10ms YSAANPt<br>|| SOSH<br>0.01 P W = 1ms<br>me SS<br>aa—— OOee|ee ee eeaee ee<br>T J(max) = 150°C<br>T C = 25°C<br>V GS = 10V<br>Single Pulse<br>DUT on 1*MRP Board PTHEE iTi, Fer<br>0.001 ll<br>1 10 100<br>-VDS DRAIN-SOURCE VOLTAGE (V)<br>Figure 12 SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br>
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## **Typical Characteristics: P-Channel**
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20 20<br>VGS = -4.5V VGS = -2.5V VDS = -5.0V<br>18<br>VGS = -3.0V<br>16<br>VGS = -2.2V 15<br>1412 f-[—— eO<br>10 V GS = -2.0V 10<br>“| —_—_ /<br>8 | /A |<br>6<br>5<br>4 V GS = -1.8V<br>| TA = 150°C / TA = 85°C<br>20 -—__Ae VGS = -1.5V 0 TA = 125°C DZ { TA = -55°CTA = 25°C<br>0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4<br>-VDS, DRAIN -SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>0.14 0.5<br>0.45<br>0.12 TTT qT<br>0.4<br>0.1 BERBER 0.35 ee<br>VGS = -2.5V 0.3<br>0.08<br>VGS = -2.7V 0.25<br>0.06 pt SESE ID = -3.5A<br>0.2<br>pee aeeeee a=<br>VGS = -4.5V 0.15<br>0.04<br>0.1<br>0.02<br>0.05 ID = -3.0A<br>0 SERRE 0 RE<br>TET ET ETE SES<br>0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12<br>-ID, DRAIN SOURCE CURRENT (A) -VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs. Figure 4 Typical Drain-Source On-Resistance<br>Drain Current and Gate Voltage vs. Gate-Source Voltage<br>0.12 VGS = -4.5V 1.8<br>0.1 1.6 Ete ey<br>TA = 125 C° VGS = -4.5V<br>0.08 TA = 150 C° 1.4 I D = -3.5A<br>0.06 TA = 85C° 1.2 oe VGS = -2.7V<br>0.04 TA = 25 C° 1 titty A ID = -3.0AVGS = -2.5V<br>TA = -55C° annP2 ID = -2.6A<br>0.02 0.8 pZannn<br>0<br>0.6 Sees<br>0 5 10 15 20<br>-50 -25 0 25 50 75 100 125 150<br>-IFigure 5 Typical On-Resistance vs. D, DRAIN SOURCE CURRENT (A) TJ, JUNCTION TEMPERATURE (°C)<br>Drain Current and Temperature Figure 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>, DRAIN CURRENT (A) D<br>D -I<br>-I<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)Ω<br>OURCE<br>, DRAIN-S ANCE (NORMALIZED)<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE (<br>ON-RESIST<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
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Document number: DS41258 Rev.3 – 2
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0.080.1 VGS = -2.5V VGS = -2.7V Z 1.21 SELL<br>es ID = -2.6A ID = -3.0A SO -ID = -250µA LE<br>0.06 aN N 0.8 eee -ID = -1mA<br>Aa Ne<br>VGS = -4.5V<br>0.04 T-Aber I D = -3.5A |T} 0.6 LL ELTXNNY<br>0.02 0.4<br>TLLEEEL) © oLELELEEERS<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( C)° TA, AMBIENT TEMPERATURE (°C)<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Ambient Temperature<br>15 1,000<br>C iss<br>\\<br>Lf eS<br>10<br>! SS C oss<br>TA= 85 °C 100 Crss<br>TA = 125 °C<br>RR —_———<br>5<br>{||, ===>><br>TA = 25 °C f = 1 MHz<br>TA= 150 °C VGS = 0V<br>TA= -55 °C<br>0 7 LWy 10 ee+TTT<br>0 0.3 0.6 0.9 1.2 1.5 0 4 8 12 16 20<br>-VSD, SOURCE-DRAIN VOLTAGE (V) -VDS , DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Fig. 10 Typical Total Capacitance<br>10 100 RDS(on)<br>Limited<br>8 10<br>PW = 100µs<br>6 1 DC<br>PW = 10s<br>VDS = -10V P W = 1s<br>4 ID = -3A 0.1 PW = 100ms PW = 10ms<br>PW = 1ms<br>2 TJ(max) = 150°C<br>0.01 TA = 25°C<br>VGS = -4.5V<br>Single Pulse<br>0 0.001 DUT on 1 * MRP Board<br>0 2 4 6 8 10 12 14 16 18 20 22 24<br>0.1 1 10 100<br>Q g, TOTAL GATE CHARGE (nC) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 Gate Charge Figure 12 SOA, Safe Operation Area<br>)Ω<br>E ON-RESISTANCE ( , GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURC<br>GS(TH)<br>V<br>DS(on)<br>R<br>, CAPACITANCE (pF)<br>, SOURCE CURRENT (A) T<br>S C<br>-I<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>
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1 uw coRPOR ATE OO<br>LIES. |<br>1<br>eemeta D = 0.9D = 0.7 eer rit tee Hr<br>Ey D = 0.5 PMOL TTT em TLL LTTE TTTP<br>D = 0.3 1ea<br>Pal LUHIIN TT eleetieaeeorri mE TAIT TUITE ETI EAE TUITE LTT TI<br>Cl<br>0.1 EH D = 0.1 1a grAEE a t eT0<br>Sg EEE<br>D = 0.05 ch eh | oc eS oe<br>To echt rit CHCCHRP<br>Tf Arr<br>D = 0.02<br>SOE HRE THIET EAT<br>0.01 LL A<br>SLeA D = 0.01 UY [A] CTI EIRSil<br>peam OFAAT PPPeeEEF EEE<br>E D = 0.005 EEEOCENECPI EECITE<br>LWA R ƟJA CTE (t) = r(t) * RƟJA<br>Single Pulse R ƟJA = 228°C/W<br>0.001 Duty Cycle, D = t1/ t2<br>1E-06 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000<br>t1, PULSE DURATION TIMES (sec)<br>Figure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>
8 of 10 **www.diodes.com**
DMC67D8UFDBQ Document number: DS41258 Rev.3 – 2
June 2019
© Diodes Incorporated
**DMC67D8UFDBQ**
## **Package Outline Dimensions**
Please see http://www.diodes.com/package-outlines.html for the latest version.
**==> picture [421 x 248] intentionally omitted <==**
**----- Start of picture text -----**<br>
U-DFN2020-6 (Type B)<br>A3<br>A1<br>A<br>Seating Plane U-DFN2020-6<br>Type B<br>a sap<br>D Dim Min Max Typ<br>A 0.545 0.605 0.575<br>D2 D2 A1 0.00 0.05 0.02<br>A3 - - 0.13<br>b 0.20 0.30 0.25<br>D 1.95 2.075 2.00<br>D2 0.50 0.70 0.60<br>e - - 0.65<br>z1 E 1.95 2.075 2.00<br>E2 0.90 1.10 1.00<br>E z1 E2<br>k - - 0.45<br>k L 0.25 0.35 0.30<br>z - - 0.225<br>z1 - - 0.175<br>L All Dimensions in mm<br>e<br>z<br>b<br>( Pin #1 ID)<br>R0.150<br>**----- End of picture text -----**<br>
## **Suggested Pad Layout**
Please see http://www.diodes.com/package-outlines.html for the latest version.
**U-DFN2020-6 (Type B)**
**==> picture [189 x 191] intentionally omitted <==**
**----- Start of picture text -----**<br>
X2<br>C<br>row_<br>X1( 2x)<br>Y2 Y1( 2x)<br>G<br>G1<br>Ris<br>Y<br>“ t oo X<br>**----- End of picture text -----**<br>
|**Dimensions**|**Value**<br>**(in mm)**|
|---|---|
|**C**|**()**<br>0.650|
|**G**|0.150|
|**G1**|0.450|
|**X**|0.350|
|**X1**|0.600|
|**X2**|1.650|
|**Y**|0.500|
|**Y1**|1.000|
|**Y2**|2.300|
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DMC67D8UFDBQ Document number: DS41258 Rev.3 – 2
June 2019 © Diodes Incorporated
**DMC67D8UFDBQ**
## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2019, Diodes Incorporated
**www.diodes.com**
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DMC67D8UFDBQ Document number: DS41258 Rev.3 – 2
June 2019
© Diodes Incorporated
Updated at June 9, 2026
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