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DMC6040SSD-13
Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 5.1 A, 5.1 A, 0.033 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: AEC-Q101
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.24W
- Power Dissipation P Channel: 1.24W
- Drain Source Voltage Vds N Channel: 60V
- Drain Source Voltage Vds P Channel: 60V
- Continuous Drain Current Id N Channel: 5.1A
- Continuous Drain Current Id P Channel: 5.1A
- Drain Source On State Resistance N Channel: 0.033ohm
- Drain Source On State Resistance P Channel: 0.033ohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.263 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
**DMC6040SSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET**
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DMC6040SSD<br>COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET<br>Product Summary Features and Benefits<br>Device V(BR)DSS RDS(on) max TA = +25°C ID •• Low Input Capacitance Low On-Resistance<br>Q1 40mΩ @ VGS = 10V 6.5 A • Fast Switching Speed<br>60V<br>N-Channel 55mΩ @ VGS = 4.5V 5.6 A • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)<br>Q2 -60V 110mΩ @ VGS = -10V -3.9 A • Halogen and Antimony Free. “Green” Device (Note 3)<br>P-Channel 130mΩ @ VGS = -4.5V -3.6 A • Qualified to AEC-Q101 Standards for High Reliability<br>Description and Applications Mechanical Data<br>This new generation MOSFET has been designed to minimize the on- • Case: SO-8<br>state resistance (RDS(ON)) and yet maintain superior switching • Case Material: Molded Plastic, “Green” Molding Compound.<br>performance, making it ideal for high efficiency power management UL Flammability Classification Rating 94V-0<br>applications. • Moisture Sensitivity: Level 1 per J-STD-020<br>• DC-DC Converters • Terminal Connections: See Diagram<br>• Power Management Functions • Terminals: Finish – Tin Finish annealed over Copper leadframe.<br>• Backlighting Solderable per MIL-STD-202, Method 208 e3<br>• Weight: 0.074 grams (approximate)<br>: DIODES. SO-8 S. D1 — D2<br>S1 D1<br>Pin1 G1 D1<br>S2 D2 G1 G2<br>G2 D2<br>o f e e<br>S1 S2<br>Top View<br>Top View Pin Configuration Q1 N-Channel MOSFET Q2 P-Channel MOSFET<br>ADVANCE INFORMATION<br>NEW PRODUCT<br>**----- End of picture text -----**<br>
## **Ordering Information** (Note 4)
|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMC6040SSD-13|SO-8|2,500/Tape & Reel|
- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
## **Marking Information**
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8 5 8 5<br>C6040SD C6040SD<br>YY WW YY WW<br>1 4 1 4<br>_ _ _<br>Chengdu A/T Site Shanghai A/T Site<br>**----- End of picture text -----**<br>
= Manufacturer’s Marking C6040SD = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 14= 2014) WW = Week (01 - 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site) :
1 of 9 **www.diodes.com**
DMC6040SSD Document number: DS36829 Rev. 1 - 2
June 2014 © Diodes Incorporated
**DMC6040SSD**
**Maximum Ratings** (@TA = +25°C, unless otherwise specified.)
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||||||||
|---|---|---|---|---|---|---|
|OOO|Characteristic|Symbol|Q1|Q2|Units|
|Drain-Source Voltage|VDSS|60|-60|V|
|(OD|Gate-Source Voltage|VGSS|±20|(OO|±20|V|
|Steady State|TTAA = +25°C = +70°C|ID|5.1 4.1|-3.1 -2.5|A|
|Continuous Drain Current (Note 6) VGS = -10V|
|eea|t<10s|TTAA = +25°C = +70°C|ID|6.5 5.2|-3.9 -3.1|A|
|GO|Maximum Body Diode Forward Current (Note 6)|IS|2.1|-2.1|A|
|ee|eee(OU|(OOO|
|Pulsed Drain Current (10µs pulse, duty cycle = 1%)|IDM|28|-19|A|
|sh|Avalanche Current (Note 7) L = 0.1mH|IAS|17.2|-17.6|A|
|Avalanche Energy|(Note 7) L = 0.1mH|EAS|14.7|15.4|mJ|
|Thermal Characteristics|(@TA = +25°C, unless otherwise specified.) A = +25°C, unless otherwise specified.) = +25°C, unless otherwise specified.)|
|Characteristic|Symbol|Value|Units|
|Total Power Dissipation (Note 5)|TA = +25°C|PD|1.24|W|
|TA = +70°C|0.8|
|Steady state|101|
|Thermal Resistance, Junction to Ambient (Note 5)|t < 10s|RθJA|61|°C/W|
|Total Power Dissipation (Note 6)|TA = +25°C|PD|1.56|W|
|TA = +70°C|1.0|
|Steady state|80|
|Thermal Resistance, Junction to Ambient (Note 6)|t<10s|RθJA|49|°C/W|
|Thermal Resistance, Junction to Case (Note 6)|RθJC|14.7|
|Operating and Storage Temperature Range|TJ, TSTG|-55 to +150|°C|
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## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) A = +25°C, unless otherwise specified.) = +25°C, unless otherwise specified.)
**Electrical Characteristics N-Channel Q1** (@TA = +25°C, unless otherwise specified.)
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|||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition|
|OFF CHARACTERISTICS (Note 8)|
|———————————|Drain-Source Breakdown Voltage|BVDSS|60|⎯|⎯|V|VGS = 0V, ID = 250µA|
|Zero Gate Voltage Drain Current|IDSS|⎯|⎯|1|µA|VDS = 48V, VGS = 0V|
|Gate-Source Leakage|IGSS|⎯|⎯|±100|nA|VGS = ±20V, VDS = 0V|
|ON CHARACTERISTICS (Note 8)|
|——.|Gate Threshold Voltage|ro|VGS(th)|1|⎯|3|res|V|=|ees|VDS = V|Ce:|GS, ID = 250µA|
|Static Drain-Source On-Resistance|RDS (ON)|⎯⎯|37 33|55 40|mΩ|VVGSGS = 10V = 4.5V,, I IDD = 8A = 5A|
|a|Diode Forward Voltage|VSD|⎯|0.7|1.2|V|VGS = 0V, IS = 1A|
|DYNAMIC CHARACTERISTICS (Note 9)|
|a|Input Capacitance|Ciss|⎯|1130|⎯|
|Output Capacitance|Coss|⎯|69|⎯|pF|VDS = 15V, VGS = 0V f = 1.0MHz|
|—_——|Reverse Transfer Capacitance|Crss|⎯|42|⎯|
|Gate Resistance|RG|⎯|1.7|⎯|Ω|VDS = 0V, VGS = 0V, f = 1.0MHz|
|Total Gate Charge (VGS = 10V)|Qg|⎯|20.8|⎯|
|————|Total Gate CharGate-Source Charge ge (VGS = 4.5V)|QQgsg|⎯⎯|3.3 9.4|⎯⎯|nC|VDS = 30V, ID = 4.3A|
|===|Gate-Drain Charge|Qgd|⎯|3.0|⎯|ae|
|Turn-On Delay Time|tD(on)|⎯|3.6|⎯|
|Turn-On Rise Time|tr|⎯|1.8|⎯|nS|VGS = 10V, VDD = 30V, RG = 6Ω,|
|Turn-Off Delay Time|tD(off)|⎯|20.1|⎯|ID = 4.3A|
|Turn-Off Fall Time|tf|⎯|4.3|⎯|
|————————————————|Body Diode Reverse Recovery Time|trr|⎯|14.2|⎯|nS|IS = 4.3A, dI/dt = 100A/μs|
|pO|Body Diode Reverse Recovery Charge|Qrr|⎯|7.5|⎯|nC|IS = 4.3A, dI/dt = 100A/μs|
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Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. UIS in production with L = 0.1mH, starting TA = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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DMC6040SSD Document number: DS36829 Rev. 1 - 2
June 2014
© Diodes Incorporated
**DMC6040SSD**
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20.0 20<br>18.0 VGS = 10V 18 VDS = 5.0V<br>VGS = 5.0V<br>7 TA, ee<br>16.0 16<br>VGS = 4.5V<br>14.0 fe VGS = 4.0V 14 oe<br>12.0 V GS = 3.5V 12<br>10.0 afeo V GS = 3.0V 10 e eeeeeeeee ||| eeee<br>8.0 feHt, - 8 fe<br>6.0 VGS = 2.8V 6 T A = 150°C<br>TA = 85°C<br>4.0 Voy 4 | T A = 125°C ff<br>TA = 25°C<br>2.0 po| 2 off|| Yi TA = -55°C<br>0.0 Po 0 Kwfef-<br>0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>0.05 0.09<br>0.08 VGS = 10V T A = 150°C<br>0.045<br>TLL 0.07 ee T A = 125°C<br>0.04<br>J VGS = 4.5V 0.06 SE eer<br>TA = 85°C<br>0.035 [eer 0.05 SEeeeeee=—<br>0.03 VGS = 10V 0.04 TA = 25°C<br>Ate TTT | 0.03 SER<br>0.025 TA = -55°C<br>TLL LL 0.02 SSE<br>0.02 LELEE EEL 0.01 “CELE<br>0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A)<br>Figure 3 Typical On-Resistance vs. Figure 4 Typical On-Resistance vs.<br>Drain Current and Gate Voltage Drain Current and Temperature<br>2.4 0.1<br>2.2 0.09<br>2 VGSID 10= 8A= V 0.08<br>1.8 |oe| | [| Yaa 0.07 EEEP| | | | | tllg<br>VGS = 4.5V<br>1.6 0.06 I D = 5A<br>VGS = 4.5V<br>1.4 P| | | | LCA I D = 5A 0.05 ol yr<br>1.2 fe 0.04 | | [| | Aaa VGSID 10= 8A= V<br>1 P|P| | | | PE]AA| | 0.03 a a aa||<br>0.8 0.02<br>0.6 SEE 0.01 a<br>0.4 FTE 0 TEE<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 5 On-Resistance Variation with Temperature Figure 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>D D<br> I I<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE (<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
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DMC6040SSD Document number: DS36829 Rev. 1 - 2
June 2014 © Diodes Incorporated
**DMC6040SSD**
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2.4<br>2.1 TTT FT Tid<br>SI<br>1.8 nS ID = 1mA<br>ID = 250µA<br>1.5 Py PS Sean<br>SN<br>1.2<br>SA<br>0.9 ttt SS<br>ELLIS<br>0.6 PEEELELLL<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C)<br>Figure 7 Gate Threshold Variation vs. Ambient Temperature<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>V<br>**----- End of picture text -----**<br>
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10000 =—_—————<br>f = 1MHz<br>=====sa=ee<br>fF {| | ff ft ft ft<br>Ciss<br>1000 S=saenn<br>a<br>==eee<br>100<br>Coss<br>ee<br>ee eeeee<br>Crss<br>10 SEERA—~ELELLLL<br>0 5 10 15 20 25 30 35 40<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Typical Junction Capacitance<br>100<br>RDS(ON)<br>Limited<br>10<br>DC<br>1 PW = 10s<br>PW = 1s<br>P W = 100ms<br>0.1 PW = 10ms<br>PW = 1ms<br>0.01 T TJA( = 25max) = 150 °C °C PW = 100µs<br>V GS = 10V<br>Single Pulse<br>0.001 DUT on 1 * MRP Board LEE ET<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 SOA, Safe Operation Area<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>
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20<br>18<br>ee<br>16<br>|<br>14 ee ||<br>12<br>HEee ||<br>10<br>ee |<br>8 T A = 85°C<br>TA = 150°C<br>IB<br>6<br>TA = 25°C<br>4 T A = 125°C<br>TG<br>20 IHBToy, TA = -55 ° C<br>0 0.3 0.6 0.9 1.2 1.5<br>VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 8 Diode Forward Voltage vs. Current<br>10 /<br>8 LLELLLLA.<br>7 /<br>6<br>Inn)/ VDS = 30V ALE<br>ID 4.3= A<br>LL<br>4<br>2 JALILlund<br>0<br>0 2 4 6 8 10 12 14 16 18 20 22<br>Qg [, TOTAL GATE CHARGE ] (nC)<br>Figure 10 Gate Charge<br>, SOURCE CURRENT (A)<br>IS<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>
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DMC6040SSD Document number: DS36829 Rev. 1 - 2
June 2014 © Diodes Incorporated
**www.diodes.com**
**DMC6040SSD** -——
## DIODESLO Radh
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1 LS A OS SO ES ee ee |<br>SS D = 0.9 Se<br>ae D = 0.7<br>EO D = 0.5 THICHTHTI Ee TR TIT<br>D = 0.3 ST<br>PTL ETE ETIthEETH<br>Se<br>0.1 D = 0.1 IL LILI LIE EL<br>a a = 7/8<br>A ee 7A<br>D = 0.05<br>Fy aIIe<br>D = 0.02<br>ITAA TTT<br>0.01 2<br>D = 0.01<br>AFa ee Ee<br>a a edSk YA0 8<br>D = 0.005<br>Fy ite HITT R θJA (t) = r(t) * R θJA TH<br>MIE AT PTT Mit<br>RθJA = 102°C/W<br>D = Single Pulse Duty Cycle, D = t1/ t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 12 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>
**Electrical Characteristics P-Channel Q2** (@TA = +25°C, unless otherwise specified.)
|**Electrical Characteristics P-Channel Q2** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-Channel Q2** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-Channel Q2** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-Channel Q2** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-Channel Q2** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-Channel Q2** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**<br>~~ee~~|**Symbol**|**mbol**<br>**Min**<br>**T**<br>~~QO~~|**Typ**<br>**Max**<br>~~QO~~<br>~~QO~~|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 8)**<br>~~ee~~<br>~~QO~~<br>~~QO~~<br>~~CT~~<br>~~GOQO~~||||||
|Drain-Source Breakdown Voltage<br>~~QO~~|BVDSS<br>~~QO~~|-60<br>~~QO~~|⎯<br>⎯<br>~~QO~~<br>~~GO~~<br>~~GO~~|V<br>VGS<br>~~QO~~<br>~~GOQO~~<br>~~GOOO~~|GS= 0V,ID= -250µA<br>~~QO~~<br>~~QO~~<br>~~OO~~|
|Zero Gate Voltage Drain Current<br>~~QO~~|IDSS<br>~~QO~~|⎯<br>~~QO~~<br>~~QO~~|⎯<br>-1<br>~~GO~~<br>~~QO~~<br>~~GO~~<br>~~S(O~~|µA<br>VDS<br>~~GO QO~~<br>~~QO~~<br>~~GOOO~~<br>~~S(OGO~~|DS= -48V,VGS= 0V<br>~~QO~~<br>~~QO~~<br>~~OO~~<br>~~GO~~|
|Gate-Source Leakage<br>~~GD~~|IGSS<br>~~GD~~|⎯<br>~~GD~~<br>~~QO~~|⎯<br>100<br>~~GO~~<br>~~GD~~<br>~~S(O~~|nA<br>VGS<br>~~GO OO~~<br>~~GD~~<br>~~S(OGO~~|GS= ±16V,VDS= 0V<br>~~OO~~<br>~~GD~~<br>~~GO~~|
|**ON CHARACTERISTICS(Note 8)**<br>~~QO~~<br>~~S(O GO~~<br>~~CT~~<br>~~GOQO~~||||||
|Gate Threshold Voltage<br>~~QO~~|VGS(th)<br>~~QO~~|-1<br>~~QO~~|⎯<br>-3<br>~~QO~~<br>~~GO~~|V<br>VDS<br>~~QO~~<br>~~GOQO~~|DS= VGS,ID= -250µA<br>~~QO~~<br>~~QO~~|
|Static Drain-Source On-Resistance<br>~~EEE~~|RDS (ON)<br>~~EEE~~|⎯<br>86<br>⎯<br>98<br>~~EEE~~<br>~~ee~~|86<br>110<br>~~GO~~<br>~~EEE~~<br>~~ee~~|mΩ<br>VGS<br>VGS<br>~~GO QO~~<br>~~EEE~~<br>~~po~~|GS= -10V,ID= -4.5A<br>~~QO~~<br>~~EEE~~<br>~~po~~|
||||98<br>130<br>~~EEE~~<br>~~ee~~||GS= -4.5V,ID=-3.5A<br>~~EEE~~<br>~~po~~|
|Diode Forward Voltage<br>~~QO~~|VSD<br>~~QO~~|⎯<br>-0.7<br>~~ee~~<br>~~QO~~|-0.7<br>-1.2<br>~~ee~~<br>~~QO~~|V<br>VGS<br>~~po~~<br>~~QO~~|GS= 0V,IS= -1A<br>~~po~~<br>~~QO~~|
|**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~Ct~~||||||
|Input Capacitance<br>~~I~~|Ciss<br>~~I~~|⎯<br>1030<br>~~I~~|1030<br>⎯<br>~~I~~|pF<br>VDS<br>~~I~~<br>~~a~~<br>~~a~~<br>~~GOOO~~|DS= -30V, VGS= 0V, f = 1.0MHz<br>~~OO~~|
|Output Capacitance<br>~~a~~|Coss<br>~~a~~|⎯<br>49.1<br>~~a~~|49.1<br>⎯<br>~~a~~|||
|Reverse Transfer Capacitance<br>~~a~~|Crss<br>~~a~~|⎯<br>38.7<br>~~a~~<br>~~QO~~|38.7<br>⎯<br>~~a~~<br>~~GO~~|||
|Gate Resistance<br>~~GD~~|RG<br>~~GD~~|⎯<br>13.6<br>~~GD~~<br>~~QO~~|13.6<br>⎯<br>~~GD~~<br>~~GO~~|Ω<br>VDS<br>~~GD~~<br>~~GOOO~~|DS= 0V,VGS= 0V,f = 1.0MHz<br>~~GD~~<br>~~OO~~|
|Total Gate Charge(VGS= -4.5V)<br>~~I~~|Qg<br>~~I~~|⎯<br>9.5<br>~~QO~~<br>~~I~~|9.5<br>⎯<br>~~GO~~<br>~~I~~|nC<br>VDS<br>~~GO OO~~<br>~~I~~<br>~~a~~<br>~~a~~<br>~~GO~~|DS= -30V, ID= -5A<br>~~OO~~|
|Total Gate Charge(VGS= -10V)<br>~~a~~|Qg<br>~~a~~|⎯<br>19.4<br>~~a~~|19.4<br>⎯<br>~~a~~|||
|Gate-Source Charge<br>~~a~~|Qgs<br>~~a~~|⎯<br>2.3<br>~~a~~|2.3<br>⎯<br>~~a~~|||
|Gate-Drain Charge<br>~~GO~~|Qgd<br>~~GO~~|⎯<br>3.6<br>~~GO~~|3.6<br>⎯<br>~~GO~~|||
|Turn-On DelayTime<br>~~I~~|tD(on)<br>~~I~~|⎯<br>3.7<br>~~I~~|3.7<br>⎯<br>~~I~~|nS<br>VGS<br>ID<br>~~I~~<br>~~a~~<br>~~a~~<br>~~GO~~<br>~~GOOO~~|GS= -10V, VDS= -30V, RGEN= 6Ω,<br>D= -5A<br>~~OO~~|
|Turn-On Rise Time<br>~~a~~|tr<br>~~a~~|⎯<br>6.3<br>~~a~~|6.3<br>⎯<br>~~a~~|||
|Turn-Off DelayTime<br>~~a~~|tD(off)<br>~~a~~|⎯<br>58.7<br>~~a~~|58.7<br>⎯<br>~~a~~|||
|Turn-Off Fall Time<br>~~GO~~|tf<br>~~GO~~|⎯<br>26.1<br>~~GO~~<br>~~GOO~~|26.1<br>⎯<br>~~GO~~<br>~~GOO~~<br>~~GO~~|||
|BodyDiode Reverse RecoveryTime<br>~~DD~~|trr<br>~~DD~~<br>~~ns~~|⎯<br>14.85<br>~~DD~~<br>~~GOO~~<br>~~ns ns~~|14.85<br>⎯<br>~~DD~~<br>~~GOO~~<br>~~GO~~<br>~~ns~~<br>~~OQ~~|nS<br>IS= -5A<br>~~DD~~<br>~~GOOO~~<br>~~OQ~~|= -5A,dI/dt = 100A/μs<br>~~DD~~<br>~~OO~~<br>~~OQ~~|
|BodyDiode Reverse RecoveryCharge<br>~~es~~|Qrr<br>~~es~~<br>~~ns~~|⎯<br>8.8<br>~~GOO~~<br>~~es~~<br>~~ns ns~~|8.8<br>⎯<br>~~GOO~~<br>~~GO~~<br>~~es~~<br>~~ns~~<br>~~OQ~~|nC<br>IS= -5A<br>~~GO OO~~<br>~~es~~<br>~~OQ~~|= -5A,dI/dt = 100A/μs<br>~~OO~~<br>~~es~~<br>~~OQ~~|
- Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. UIS in production with L = 0.1mH, starting TA = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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DMC6040SSD Document number: DS36829 Rev. 1 - 2
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**DMC6040SSD**
**==> picture [488 x 671] intentionally omitted <==**
**----- Start of picture text -----**<br>
20.0 20<br>18.0 VGS = -10V VGS = -4.0V 18 VDS = -5.0V<br>VGS = -5.0V<br>16.0 |Of VGS = -4.5V 16 OE<br>VGS = -3.5V<br>14.0 ST 14 Yr<br>12.0 —)/ aa 12 ee) a<br>10.0 V GS = -3.0V 10<br>A e a se<br>8.0 8 SEEGER<br>VGS = -2.8V<br>6.0 a 6 ey<br>4.0 4 TA = 150°C T A = 85°C<br>2.0 2 T A = 125°C T A = 25°C<br>TA = -55°C<br>0.0 0<br>0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>-VDS, DRAIN -SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 13 Typical Output Characteristics Figure 14 Typical Transfer Characteristics<br>0.18 0.24<br>0.22 VGS = -10V TA = 150°C<br>0.16 0.2<br>0.14 HHTITTLE 0.180.16 SRESsaee~| | TA = 125 | °C tt TA = 85° | C to=<br>0.14<br>0.12 BERREEZ VGS = -4.5V [AD] 0.12 e aee soae<br>0.1 TA = 25°C<br>0.1 eee) 0.08 EE te<br>VGS = -10V 0.06 T A = -55°C<br>0.08 0.04<br>PSE] = EER<br>0.02<br>0.06 SEeeeenee 0 SSR P| tf ff ft ft te<br>0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20<br>-ID, DRAIN SOURCE CURRENT (A) -ID, DRAIN SOURCE CURRENT (A)<br>Figure 15 Typical On-Resistance vs. Figure 16 Typical On-Resistance vs.<br>Drain Current and Gate Voltage Drain Current and Temperature<br>2.2 0.2<br>VGS = -10V<br>2 I D = -12A 0.18<br>Sean et] ett tl ye<br>1.8 a SY 0.16 CS VGS -4.= 5V<br>1.6 eae 0.14 OK ID -3.5= A<br>VGS = -4.5V<br>1.4 I D = -5A 0.12<br>VGS = -10V<br>1.2 Saneeau 0.1 CCEA ID -4.5= A<br>1 anne 0.08 een<br>0.80.6 HHHaneZ 0.060.04 set200Za<br>0.4 ATE EEEE 0.02 CEE<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Fig. 17 On-Resistance Variation with Temperature Figure 18 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>)<br>) Ω<br>Ω , DRAIN-SOURCE ON-RESISTANCE (<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>DS(ON) R<br>R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED) , DRAIN-SOURCE ON-RESISTANCE (<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
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DMC6040SSD Document number: DS36829 Rev. 1 - 2
June 2014 © Diodes Incorporated
**www.diodes.com**
**DMC6040SSD**
**==> picture [484 x 662] intentionally omitted <==**
**----- Start of picture text -----**<br>
2.2 20<br>18<br>2<br>16<br>1.8<br>SP -ID = 1mA 14<br>1.6 -I D = 250µA 12<br>10<br>1.4 SK || TA= 150°C<br>ti} ARAL 8 I<br>1.2 6 T A = 125°C<br>COCR 4 | T A = 25°C<br>1 TA= 85°C<br>2 TA= -55°C<br>0.8 C CCEECENCE 0 YFWh;<br>-50 -25 0 25 50 75 100 125 150 0 0.3 0.6 0.9 1.2 1.5<br>TA, AMBIENT TEMPERATURE (°C) -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 19 Gate Threshold Variation vs. Ambient Temperature Figure 20 Diode Forward Voltage vs. Current<br>10000 10<br>f = 1MHz<br>Sanaa LEELA<br>8<br>Ciss<br>1000<br>eee TV<br>6<br>VDS = -30V<br>ID = -5A<br>SSS 4 Ty<br>100<br>C oss<br>2<br>C rss<br>SS YL<br>10 ne 0 Ae<br>0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 14 16 18 20<br>-VDS, DRAIN-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)<br>Figure 21 Typical Junction Capacitance Figure 22 Gate-Charge Characteristics<br>100<br>RDS(on)<br>Limited<br>10<br>1 DC<br>P W = 10s<br>P W = 1s<br>0.1 PW = 100ms<br>PW = 10ms<br>SE ONES<br>P W = 1ms<br>0.01 T TJ(max)A = 25° = C 150°C PW = 100µs<br>VGS = -10V<br>Single Pulse<br>0.001 DUT on 1 * MRP Board<br>0.1 1 10 100<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 23 SOA, Safe Operation Area<br>, SOURCE CURRENT (A)<br>S<br>, GATE THRESHOLD VOLTAGE (V) -I<br>GS(TH)<br>V<br>, JUNCTION CAPACITANCE (pF)T , GATE-SOURCE VOLTAGE (V)GS<br>C -V<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br>
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DMC6040SSD Document number: DS36829 Rev. 1 - 2
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**DMC6040SSD**
## **Package Outline Dimensions**
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
**==> picture [382 x 148] intentionally omitted <==**
**----- Start of picture text -----**<br>
SO-8<br>Dim Min Max<br>A - 1.75<br>E1 E A1 0.10 0.20<br>A1 Gauge PlaneSeating Plane A2 1.30 1.50<br>L A3 0.15 0.25<br>Detail ‘A’ b 0.3 0.5<br>D 4.85 4.95<br>E 5.90 6.10<br>h 45° 7°~9° E1 3.85 3.95<br>e 1.27 Typ<br>A2 A A3 | Detail ‘A’ h - 0.35<br>L 0.62 0.82<br>e b θ 0° 8°<br>D All Dimensions in mm<br>0.254<br>**----- End of picture text -----**<br>
## **Suggested Pad Layout**
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
**==> picture [94 x 113] intentionally omitted <==**
**----- Start of picture text -----**<br>
X<br>C1<br>C2<br>Y<br>OG<br>! ] + E|<br>**----- End of picture text -----**<br>
|**Dimensions**|**Value (in mm)**|
|---|---|
|**X**|0.60|
|**Y**|1.55|
|**C1 **|5.4|
|**C2**|1.27|
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DMC6040SSD Document number: DS36829 Rev. 1 - 2
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**DMC6040SSD**
## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
## **LIFE SUPPORT**
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
- A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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DMC6040SSD Document number: DS36829 Rev. 1 - 2
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Updated at June 9, 2026
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