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DMC4047LSD-13
Dual MOSFET, Complementary N and P Channel, 40 V, 40 V, 7 A, 7 A, 0.015 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.8W
- Power Dissipation P Channel: 1.8W
- Drain Source Voltage Vds N Channel: 40V
- Drain Source Voltage Vds P Channel: 40V
- Continuous Drain Current Id N Channel: 7A
- Continuous Drain Current Id P Channel: 7A
- Drain Source On State Resistance N Channel: 0.015ohm
- Drain Source On State Resistance P Channel: 0.015ohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.225 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**DMC4047LSD** &. **COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET** —— ## **Product Summary** |**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**| |---|---|---|---| ||||| |**Device**|**V(BR)DSS**|**RDS(on) max**|**ID**<br>**TA = +25°C**| |Q2|40V|24mΩ@VGS= 10V|6.9A| |||32mΩ@VGS= 4.5V|6.0A| |Q1|-40V|45mΩ@VGS= -10V|-5.1A| |||55mΩ@VGS= -4.5V|-4.5A| ## **Features and Benefits** - Low Input Capacitance - Low On-Resistance - Fast Switching Speed - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** - **Halogen and Antimony Free. “Green” Device (Note 3)** - **Qualified to AEC-Q101 Standards for High Reliability** ## **Mechanical Data** ## **Description** This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ## **Applications** - Case: SO-8 - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminal Connections: See Diagram - Terminals: Finish – Matte Tin annealed over Copper leadframe Solderable per MIL-STD-202, Method 208 © **e3** - Weight: 0.074 grams (approximate) - DC-DC Converters - Power Management Functions - Backlighting **==> picture [427 x 125] intentionally omitted <==** **----- Start of picture text -----**<br> D2<br>D1<br>S2 8 D2<br>G2 D2<br>S1 D1 G2 G1<br>G1 6| D1<br>S2<br>S1<br>Top View TOP VIEW<br>Internal Schematic N-Channel MOSFET P-Channel MOSFET<br>**----- End of picture text -----**<br> ## **Ordering Information** (Note 4) |**Part Number**|**Case**|**Packaging**| |---|---|---| |DMC4047LSD-13|SO-8|2,500/Tape&Reel| - Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. ## **Marking Information** **==> picture [223 x 105] intentionally omitted <==** **----- Start of picture text -----**<br> 8 5 8 5<br>ooono qooon<br>C4047SD C4047SD<br>YY WW YY WW<br>PF} 1 LI LI Ud 4 Py 1 LI LIU 4<br>Chengdu A/T Site Shanghai A/T Site<br>**----- End of picture text -----**<br> > _ = Manufacturer’s Marking C4047SD = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 13 = 2013) WW = Week (01 - 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site) 1 of 9 **www.diodes.com** DMC4047LSD Document number: DS36206 Rev. 4 - 2 November 2013 © Diodes Incorporated **DMC4047LSD** **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---|---| |||||||| |**Characteristic**<br>~~a~~|||**Symbol**<br>~~a~~|**Value_Q2**<br>~~a~~|**Value_Q1**<br>~~a~~|**Units**<br>~~a~~| |Drain-Source Voltage<br>~~a~~|||VDSS<br>~~a~~|40<br>~~a~~|-40<br>~~a~~|V<br>~~a~~| |Gate-Source Voltage<br>~~|~~|||VGSS<br>~~|~~|±20<br>~~|~~|±20<br>~~|~~|V<br>~~|~~| |Continuous Drain Current (Note 6) VGS= 10V<br>~~rr~~|Steady<br>State<br>~~rr~~<br>~~es~~|TA= +25°C<br>TA= +70°C<br>~~rr~~|ID<br>~~rr~~|7.0<br>5.6<br>~~rr~~|-5.1<br>-4.1<br>~~rr~~|A<br>~~rr~~| ||t<10s<br>~~rr~~<br>~~es~~|TA= +25°C<br>TA= +70°C<br>~~rr~~|ID<br>~~rr~~|9.0<br>7.2<br>~~rr~~|-6.5<br>-5.2<br>~~rr~~|A<br>~~rr~~| |Maximum Body Diode Forward Current (Note 6)<br>~~es~~|||IS|2.5|-2.5|A| |Pulsed Drain Current (10µs pulse, duty cycle = 1%)<br>~~ef~~|||IDM<br>~~ef~~|70<br>~~ef~~|-40<br>~~ef~~|A<br>~~ef~~| |Avalanche Current (Notes 7) L = 0.1mH<br>~~a~~|||IAR<br>~~a~~|20<br>~~a~~|20<br>~~a~~|A<br>~~a~~| |Repetitive Avalanche Energy (Notes 7) L = 0.1mH<br>~~Pf~~|||EAR<br>~~Pf~~|20<br>~~Pf~~|20<br>~~Pf~~|mJ<br>~~Pf~~| **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) |**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||| |---|---|---|---|---| |**Characteristic**||**Symbol**|**Value**|**Units**| |Total Power Dissipation (Note 5)|TA= +25°C|PD|1.3|W| ||TA= +70°C||0.8|| |Thermal Resistance, Junction to Ambient (Note 5)|Steadystate|RJA|98|°C/W| ||t<10s||59|| |Total Power Dissipation (Note 6)|TA= +25°C|PD|1.8|W| ||TA= +70°C||1.1|| |Thermal Resistance, Junction to Ambient (Note 6)|Steadystate|RθJA|71|°C/W| ||t<10s||43|| |Thermal Resistance, Junction to Case (Note 6)||RθJC|11.8|| |Operating and Storage Temperature Range||TJ, TSTG|-55 to +150|°C| ## **Electrical Characteristics N-Channel Q2** (@TA = +25°C, unless otherwise specified.) |**Electrical Characteristics N-Channel** **Q2** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-Channel** **Q2** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-Channel** **Q2** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-Channel** **Q2** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-Channel** **Q2** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-Channel** **Q2** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-Channel** **Q2** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---|---| |||||||| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**| |**OFF CHARACTERISTICS(Note 8)**<br>~~ee~~||||||| |Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|40<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= 250µA<br>~~ee~~| |Zero Gate Voltage Drain Current<br>~~ee~~|IDSS<br>~~ee~~<br>~~I~~|<br>~~ee~~<br>~~I~~|<br>~~ee~~<br>~~(RN~~|1<br>~~ee~~<br>~~(OO~~|µA<br>~~ee~~<br>~~OO (~~|VDS= 40V, VGS= 0V<br>~~ee~~<br>~~(~~| |Gate-Source Leakage<br>~~I~~|IGSS<br>~~I~~<br>~~I~~|<br>~~I~~<br>~~I~~|<br>~~I~~<br>~~(RN~~|100<br>~~I~~<br>~~(OO~~|nA<br>~~I~~<br>~~OO (~~|VGS= ±20V, VDS= 0V<br>~~I~~<br>~~(~~| |**ON CHARACTERISTICS(Note 8)**<br>~~I~~<br>~~I (RN (OO~~<br>~~OO (~~<br>~~ee~~||||||| |Gate Threshold Voltage<br>~~ee~~|VGS(th)<br>~~ee~~|1.4<br>~~ee~~|<br>~~ee~~|2.4<br>~~ee~~|V<br>~~ee~~|VDS= VGS, ID= 250µA<br>~~ee~~| |Static Drain-Source On-Resistance<br>~~a~~|RDS(ON)<br>~~RN~~||15|24|mΩ<br>~~(OO~~|VGS= 10V, ID= 6A| |||<br>~~I (OO~~|20<br>~~(OO~~|32<br>~~(OO~~||VGS= 4.5V, ID= 5A<br>~~(~~| |Diode Forward Voltage<br>~~ID~~|VSD<br>~~ID~~<br>~~RN~~|<br>~~ID~~<br>~~I (OO~~|0.7<br>~~ID~~<br>~~(OO~~|1.0<br>~~ID~~<br>~~(OO~~|V<br>~~ID~~<br>~~(OO~~|VGS= 0V, IS= 1.0A<br>~~ID~~<br>~~(~~| |**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~RN I (OO (~~<br>~~a~~<br>~~eeee~~||||||| |Input Capacitance<br>~~a———~~|Ciss<br>~~———~~<br>~~ee~~|<br>~~———~~<br>~~ee~~|1060<br>~~———~~<br>|<br>~~———~~<br>~~e~~|pF<br>~~———~~<br>~~e~~|VDS= 20V, VGS= 0V,<br>f = 1.0MHz<br>~~———~~<br>~~ee~~| |Output Capacitance<br>~~a———~~|Coss<br>~~———~~<br>~~ee~~|<br>~~———~~<br>~~ee~~|84<br>~~———~~<br>|<br>~~———~~<br>~~e~~||| |Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~———~~<br>~~ee~~|<br>~~———~~<br>~~ee~~|58<br>~~———~~<br>|<br>~~———~~<br>~~e~~||| |Gate Resistance<br>~~———~~<br>~~———~~|RG<br>~~———~~<br>~~ee~~|<br>~~———~~<br>~~ee~~|1.6<br>~~———~~<br>|<br>~~———~~<br>~~e~~<br>~~e~~|Ω<br>~~———~~<br>~~e~~<br>~~e~~|VDS= 0V, VGS= 0V, f = 1.0MHz<br>~~———~~<br>~~ee~~<br>~~ee~~| |Total Gate Charge(VGS= 4.5V)<br>~~a~~<br>~~———~~|Qg<br>~~ee~~<br>~~a~~|<br>~~ee ~~<br>~~a~~|8.8<br> <br>~~a~~|<br> ~~e~~<br>~~a~~<br>~~e~~|nC<br>~~e~~<br>~~e~~|VDS= 20V, ID= 8A<br>~~ee~~<br>~~ee~~| |Total Gate Charge(VGS= 10V)<br>~~———~~|Qg||19.1|<br>~~e~~||| |Gate-Source Charge<br>~~———~~|Qgs||3.0|<br>~~e~~||| |Gate-Drain Charge<br>~~———~~<br>~~—<———~~|Qgd<br>~~—<———~~||2.5|<br>~~e~~||| |Turn-On Delay Time<br>~~———~~<br>~~—<———~~|tD(on)<br>~~—<———~~||5.3|<br>~~e~~|nS<br>~~e~~|VDD= 25V, RL= 2.5Ω<br>VGS= 10V, RG= 3Ω<br>~~ee~~| |Turn-On Rise Time<br>~~a~~<br>~~—<———~~|tr<br>~~a~~<br>~~—<———~~|<br>~~a~~|7.1<br>~~a~~|<br>~~a~~||| |Turn-Off Delay Time<br>~~—<———~~|tD(off)<br>~~—<———~~||15.1|||| |Turn-Off Fall Time<br>~~—<———~~|tf<br>~~—<———~~||4.8|||| |Body Diode Reverse Recovery Time<br>~~—<———~~<br>~~elmer~~|trr<br>~~—<———~~<br>~~elmeree~~|<br>~~eelr~~|10.5<br>~~lreT~~|<br>~~eT~~<br>~~tr~~|nS<br>~~tred~~|IF= 8A, di/dt = 100A/μs<br>~~ed~~| |Body Diode Reverse Recovery Charge<br>~~—<———~~<br>~~rrr~~<br>~~elmer~~|Qrr<br>~~—<———~~<br>~~rrr~~<br>~~elmeree~~|<br>~~rrr~~<br>~~eelr~~|4.15<br>~~rrr~~<br>~~lreT~~|<br>~~rrr~~<br>~~eT~~<br>~~tr~~|nC<br>~~rrr~~<br>~~tred~~|IF= 8A, di/dt = 100A/μs<br>~~rrr~~<br>~~ed~~| 2 of 9 **www.diodes.com** DMC4047LSD Document number: DS36206 Rev. 4 - 2 November 2013 © Diodes Incorporated **DMC4047LSD** **Electrical Characteristics P-Channel Q1** (@TA = +25°C, unless otherwise specified.) |**Electrical Characteristics P-Channel** **Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-Channel** **Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-Channel** **Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-Channel** **Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-Channel** **Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-Channel** **Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-Channel** **Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---|---| |||||||| |**Characteristic**<br>~~Po~~|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**| |**OFF CHARACTERISTICS(Note 8)**<br>~~Po~~<br>~~GDQOOO~~||||||| |Drain-Source Breakdown Voltage<br>~~Qe~~|BVDSS<br>~~Qe~~|-40<br>~~Qe~~<br>~~GD~~<br>~~GY~~|<br>~~Qe~~<br>~~GD~~<br>~~GY~~|<br>~~Qe~~<br>~~QO~~<br>~~QO~~|V<br>~~Qe~~<br>~~OO~~<br>~~OO~~|VGS= 0V, ID= -250µA<br>~~Qe~~<br>~~OO~~<br>~~OO~~| |Zero Gate Voltage Drain Current<br>~~Ge~~|IDSS<br>~~Ge~~|<br>~~GD~~<br>~~Ge~~<br>~~GY~~|<br>~~GD ~~<br>~~Ge~~<br>~~GY~~|-1<br> ~~QO ~~<br>~~Ge~~<br>~~QO~~|µA<br> ~~OO~~<br>~~Ge~~<br>~~OO~~|VDS= -40V, VGS= 0V<br>~~OO~~<br>~~Ge~~<br>~~OO~~| |Gate-Source Leakage<br>~~Cn~~|IGSS<br>|<br>~~GY~~<br>|<br>~~GY ~~<br>|100<br> ~~QO ~~<br>|nA<br> ~~OO~~<br>|VGS= ±20V, VDS= 0V<br>~~OO~~<br>| |**ON CHARACTERISTICS(Note 8)**<br>~~Cn~~<br>~~GsQOOO~~||||||| |Gate Threshold Voltage<br>~~CnsD~~|VGS(th)<br>~~sD~~|-1.0<br>~~sD~~<br>~~Gs~~<br>~~ee eee~~|<br>~~sD~~<br>~~Gs~~<br>~~eee~~|-2.2<br>~~sD~~<br>~~QO~~<br>~~eee~~|V<br>~~sD~~<br>~~OO~~<br>~~eee eee~~|VDS= VGS, ID= -250µA<br>~~sD~~<br>~~OO~~<br>~~eee~~| |Static Drain-Source On-Resistance<br>~~ee~~|RDS(ON)<br>~~ee~~|<br>~~Gs~~<br>~~ee~~<br>~~ee eee~~|33<br>~~Gs ~~<br>~~ee~~<br>~~eee~~|45<br> ~~QO ~~<br>~~ee~~<br>~~eee~~|mΩ<br> ~~OO~~<br>~~ee~~<br>~~eee eee~~|VGS= -10V, ID= -5A<br>~~OO~~<br>~~ee~~<br>~~eee~~| |||<br>~~ee~~<br>~~ee eee~~|40<br>~~ee~~<br>~~eee~~|55<br>~~ee~~<br>~~eee~~||VGS= -4.5V, ID= -4A<br>~~ee~~<br>~~eee~~| |Diode Forward Voltage<br>~~Cn~~|VSD|<br>~~ee eee~~|-0.7<br>~~eee~~|-1.0<br>~~eee~~|V<br>~~eee eee~~|VGS= 0V, IS= -1.0A<br>~~eee~~| |**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~Cn~~||||||| |Input Capacitance<br>~~Cn~~<br>~~ss~~|Ciss<br>~~ss~~|<br>~~ss~~|1154<br>~~ss~~|<br>~~ss~~|pF|VDS= -20V, VGS= 0V<br>f = 1.0MHz| |Output Capacitance|Coss||84|||| |Reverse Transfer Capacitance|Crss|<br>~~GQ~~|66<br>~~GQ~~|<br>~~GQ~~||| |Gate Resistance<br>~~Qn~~|RG<br>~~Qn~~|<br>~~Qn~~<br>~~GQ~~|12.6<br>~~Qn~~<br>~~GQ~~|<br>~~Qn~~<br>~~GQ~~|Ω<br>~~Qn~~|VDS= 0V, VGS= 0V, f = 1.0MHz<br>~~Qn~~| |Total Gate Charge(VGS= -4.5V)<br>~~ss~~|Qg<br>~~ss~~|<br>~~GQ~~<br>~~ss~~|10.6<br>~~GQ~~<br>~~ss~~|<br>~~GQ~~<br>~~ss~~|nC|VDS= -20V, ID= -4.9A| |Total Gate Charge(VGS= -10V)<br>~~ss~~|Qg<br>~~ss~~|<br>~~ss~~|21.5<br>~~ss~~|<br>~~ss~~||| |Gate-Source Charge|Qgs||2.2|||| |Gate-Drain Charge<br>~~es~~|Qgd<br>~~es~~|<br>~~es~~|3.3<br>~~es~~|<br>~~es~~||| |Turn-On DelayTime<br>~~ss~~|tD(on)<br>~~ss~~|<br>~~ss~~|8.7<br>~~ss~~|<br>~~ss~~|nS<br>~~OO~~|VDS= -20V, ID= -3.9A<br>VGS= -4.5V, RG= 1Ω<br>~~OO~~| |Turn-On Rise Time<br>~~ss~~|tr<br>~~ss~~|<br>~~ss~~|19.6<br>~~ss~~|<br>~~ss~~||| |Turn-Off DelayTime|tD(off)||34.9|||| |Turn-Off Fall Time<br>~~ss~~<br>~~rrr~~|tf<br>~~ss~~|<br>~~ss~~<br>~~Gs~~|25.5<br>~~ss~~<br>~~Gs~~|<br>~~ss~~<br>~~QO~~||| |BodyDiode Reverse RecoveryTime<br>~~Gn~~<br>~~rrree~~|trr<br>~~Gn~~|<br>~~Gn~~<br>~~Gs~~|9.61<br>~~Gn~~<br>~~Gs~~|<br>~~Gn~~<br>~~QO~~|nS<br>~~Gn~~<br>~~OO~~|IS= -3.9A, dI/dt = 100A/μs<br>~~Gn~~<br>~~OO~~| |BodyDiode Reverse RecoveryCharge<br>~~rrree~~|Qrr|<br>~~Gs~~|3.30<br>~~Gs~~|<br>~~QO~~|nC<br>~~OO~~|IS= -3.9A, dI/dt = 100A/μs<br>~~OO~~| - Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 3 of 9 **www.diodes.com** DMC4047LSD Document number: DS36206 Rev. 4 - 2 November 2013 © Diodes Incorporated **DMC4047LSD** **N-Channel Q2** **==> picture [480 x 670] intentionally omitted <==** **----- Start of picture text -----**<br> 20.0 30<br>VGS = 10V<br>VGS = 5.0V VGS = 3.5V 25<br>15.0 Po V GS = 4.5V Fy<br>20<br>VGS = 4.0V VGS = 150°C VGS = 85°C<br>10.0 eo 15<br>I NIE<br>VGS = 25°C<br>10<br>5.0 V GS = 3.0V VGS = 125°C<br>PPE oSJ VGS = -55°C<br>5<br>0.0 Ae VGS = 2.5V 0 ee) aneAl<br>0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS, DRAIN-SOURCE VOLTAGE(V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>0.05<br>0.045<br>0.04<br>V GS = 4.5V TA= 150°C<br>0.02 0.035 ft T A = 125°C —_<br>bo o t 0.0250.03 ee T A = 85°C<br>TA= 25°C<br>0.02 es<br>VGS = 10.0V 0.015 TA= -55°C<br>o o n ee<br>g o 0.01 SETTd<br>S 0 0 1 0.005 Pf | [| [ff]]<br>© 9 . 008 0 Ff | | ft ft<br>0 5 10 15 20 0 5 10 15 20 25 30<br>ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT(A)<br>Figure 3 Typical On-Resistance vs. Figure 4 Typical On-Resistance vs.<br>Drain Current and Gate Voltage Drain Current and Temperature<br>2 0.04<br>VGS = 10V 0.035<br>ID = 10A<br>1.5 TIL 0.03 CCE<br>LZ FECES<br>VGS = 4.5V<br>VGS = 4.5V 0.025 ID = 5.0A<br>ID = 5.0A<br>1 a 0.02 Saaae<br>eae Supe sae<br>0.015<br>VGS = 10V<br>ID = 10A<br>0.5 TT)an ] yd. 0.01 penseESannee<br>0 TTT 0.0050 C EEEPEECE<br>Li tt it) -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 5 On-Resistance Variation with Temperature Figure 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>)<br>RESISTANCE (<br>, DRAIN-SOURCE ON-<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE (<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> 4 of 9 DMC4047LSD Document number: DS36206 Rev. 4 - 2 November 2013 © Diodes Incorporated **www.diodes.com** **DMC4047LSD** **==> picture [472 x 219] intentionally omitted <==** **----- Start of picture text -----**<br> 3 30<br>2.8<br>Soe eeene ee |e<br>25<br>2.6 TA = 150°C<br>2.4 TA = 25°C<br>Sees 20<br>2.2 ID=1mA e ee ee nee<br>2 Seecepiee 15 Le<br>1.8 TA = 85°C TA = -55°C<br>ID=250µA 10<br>1.6<br>1.4<br>5<br>1.2 SSP<br>1 FEE 0 BD<br>0 0.3 0.6 0.9 1.2 1.5<br>-50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 8 Diode Forward Voltage vs. Current<br>Figure 7 Gate Theshold Variation vs Ambient Temperature<br>, GATE THESHOLD VOLTAGE (V)GS(TH) , SOURCE CURRENT (A)IS<br>V<br>**----- End of picture text -----**<br> 5 of 9 **www.diodes.com** DMC4047LSD Document number: DS36206 Rev. 4 - 2 November 2013 © Diodes Incorporated **DMC4047LSD** ## **P-Channel Q1** **==> picture [481 x 667] intentionally omitted <==** **----- Start of picture text -----**<br> 30.0 30<br>VGS = -10V VGS = -3.5V VDS = -5.0V<br>25.0 V GS = -5.0V 25<br>VGS = -4.5V<br>20.0 7) VGS = -4.0V a VGS = -3.0V 20 Reena<br>15.0 yf — 15 PU TAT<br>ff TELLTALE<br>10.0 10<br>VGS = -2.5V TA = 150C<br>Yoo BERED TA = 85 RE C<br>5.0 5 T A = 125C T A = 25C<br>VGS = -2.0V TA = -55C<br>0.0 [L—_ 0 ae see<br>0 1 2 3 4 5<br>-VDS, DRAIN -SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 9 Typical Output Characteristics Figure 10 Typical Transfer Characteristics<br>0.2 0.1<br>VGS = -4.5V<br>0.18 Po |<br>0.09 tT ty<br>VGS = -2.5V<br>0.16<br>0.08 TA = 150 C<br>0.14<br>0.07 TA = 125 C<br>0.12 7 aS<br>0.1 I 0.06 pa ee TA = 85C<br>0.08 a 0.05 = TA = 25C<br>0.06<br>ee ee eee VGS = -4.5V 0.04 Ff fT fp<br>0.04<br>VGS = -10V 0.03 T A = -55C<br>0.02<br>0 === 0.02 F- ||<br>0 5 10 15 20 0 5 10 15 20 25 30<br>-ID, DRAIN SOURCE CURRENT (A) -ID, DRAIN SOURCE CURRENT (A)<br>Figure 11 Typical On-Resistance vs. Figure 12 Typical On-Resistance vs.<br>Drain Current and Gate Voltage Drain Current and Temperature<br>2 0.08<br>VGS = -10V<br>ID = -10A 0.07<br>1.5 Td 2) 0.06 eee V GS -4.= 5V ee<br>ID -5= A<br>VGS = -4.5V 0.05<br>ID = -5A<br>1 Pa 0.04 eee V GS = -10V<br>ID -10= A<br>0.03<br>0.5 PT) 0.02 eet<br>0.01<br>0 0<br>-50 TCEEEEE) -25 0 25 50 75 100 125 150 = -50 EEEEEEEE -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Figure 13 On-Resistance Variation with Temperature Figure 14 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)D , DRAIN CURRENT (A)D<br>-I -I<br>) )<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED) , DRAIN-SOURCE ON-RESISTANCE (<br>DS(on)<br>R<br>**----- End of picture text -----**<br> 6 of 9 **www.diodes.com** DMC4047LSD Document number: DS36206 Rev. 4 - 2 November 2013 © Diodes Incorporated **DMC4047LSD** | **==> picture [108 x 27] intentionally omitted <==** **----- Start of picture text -----**<br> LisLIJUVS.<br>**----- End of picture text -----**<br> **==> picture [479 x 441] intentionally omitted <==** **----- Start of picture text -----**<br> 2 30<br>1.8<br>25<br>1.6 eeee<br>1.4 -I D = 1mA<br>20<br>1.2 P| |Pry<br>1 Pt| Pe -I D = 250 PRY µA Mh. Pe&Y 15<br>0.8 TA= 25C<br>10<br>0.6<br>0.4<br>5<br>0.2<br>0-50 -25 0 25 50 75 100 125 150 00 0.3 0.6 0.9 1.2 1.5<br>TA, AMBIENT TEMPERATURE (°C) -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 15 Gate Threshold Variation vs. Ambient Temperature Figure 16 Diode Forward Voltage vs. Current<br>6 D = 0.7D = 0.5 rm<br>Z sat D = 0.3 esl cree a<br>e— BLUE SEUI TT eTNee Det = TTT | ETTI ETTPPELT<br>D = 0.1 D = 0.9<br>o.z * PUTSe,eA eS EPAe PEee<br>z= ce D = 0.05 72 0 OO<br>or Rn tT<br>Zc LUCOITTCreel<br>D = 0.02<br>WwBATT D = 0.01 ETT TTI TET<br>0) 0 m0)1 eae ee Odoe tT<br>Z I eames y= cianena e a e ce ea<br><x SSeet acc<br>w ETHIE D = 0.005 R JA (t) = r(t) * R JA (UH<br>= SE RJA = 94°C/W HT<br>Ss LP TM TE Tai PT iil<br>Single Pulse Duty Cycle, D = t1/ t2<br>v o or _LLLUME LL TIIIT TEENIE TEESE FELINE EET Hl<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIMES (sec)<br>Figure 17 Transient Thermal Resistance<br>, SOURCE CURRENT (A)<br>S<br>, GATE THRESHOLD VOLTAGE (V) -I<br>GS(TH)<br>V<br>**----- End of picture text -----**<br> 7 of 9 **www.diodes.com** DMC4047LSD Document number: DS36206 Rev. 4 - 2 November 2013 © Diodes Incorporated **DMC4047LSD** ## **Package Outline Dimensions** Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. **==> picture [395 x 152] intentionally omitted <==** **----- Start of picture text -----**<br> SO-8<br>Dim Min Max<br>A - 1.75<br>E1 E A1 0.10 0.20<br>Gauge Plane A2 1.30 1.50<br>A1 L Seating Plane A3 0.15 0.25<br>b 0.3 0.5<br>Detail ‘A’ D 4.85 4.95<br>E 5.90 6.10<br>h 7°~9° E1 3.85 3.95<br>45° e 1.27 Typ<br>Detail ‘A’ h - 0.35<br>A2 A A3 L 0.62 0.82<br>e b 0 8<br>All Dimensions in mm<br>D<br>0.254<br>**----- End of picture text -----**<br> ## **Suggested Pad Layout** Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. **==> picture [94 x 110] intentionally omitted <==** **----- Start of picture text -----**<br> X<br>"a ao ‘i<br>C1<br>C2<br>Y + |<br>HOGS<br>**----- End of picture text -----**<br> **==> picture [108 x 46] intentionally omitted <==** **----- Start of picture text -----**<br> Dimensions Value (in mm)<br>X 0.60<br>Y 1.55<br>C1 5.4<br>C2 1.27<br>**----- End of picture text -----**<br> 8 of 9 **www.diodes.com** DMC4047LSD Document number: DS36206 Rev. 4 - 2 November 2013 © Diodes Incorporated **DMC4047LSD** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. ## **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: - A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2013, Diodes Incorporated **www.diodes.com** 9 of 9 **www.diodes.com** DMC4047LSD Document number: DS36206 Rev. 4 - 2 November 2013 © Diodes Incorporated
Updated at June 9, 2026
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