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DMC4040SSD-13
Dual MOSFET, Complementary N and P Channel, 40 V, 40 V, 6.8 A, 6.8 A, 0.025 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.8W
- Power Dissipation P Channel: 1.8W
- Drain Source Voltage Vds N Channel: 40V
- Drain Source Voltage Vds P Channel: 40V
- Continuous Drain Current Id N Channel: 6.8A
- Continuous Drain Current Id P Channel: 6.8A
- Drain Source On State Resistance N Channel: 0.025ohm
- Drain Source On State Resistance P Channel: 0.025ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.271 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**DMC4040SSD** ~~—~~ **40V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET** ## **Product Summary** |**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**| |---|---|---|---| ||||| |**Device**|**V(BR)DSS**|**RDS(ON)Max**|**ID Max (A)**<br>**TA = +25°C**<br>(Notes 6 & 8)| |Q1|40V|25mΩ @ VGS= 10V|7.5| |||40mΩ @ VGS= 4.5V|6.2| |Q2|-40V|25mΩ @ VGS= -10V|-7.3| |||45mΩ @ VGS= -4.5V|-5.7| ## **Features and Benefits** - Matched N & P RDS(ON) **–** Minimizes Power Losses - Fast Switching – Minimizes Switching Losses - Dual Device – Reduces PCB Area - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** - **Halogen and Antimony Free. “Green” Device (Note 3)** ## **Description** This MOSFET is designed to ensure that RDS(ON) of N and P channel FET are matched to minimize losses in both arms of the bridge. The DMC4040SSD is optimized for use in a 3-phase brushless DC motor circuit (BLDC), and CCFL backlighting. ## **Applications** ## **Mechanical Data** - Case: SO-8 - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 - Weight: 0.074 grams (Approximate) - 3-Phase BLDC Motor - CCFL Backlighting **==> picture [22 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> SO-8<br>**----- End of picture text -----**<br> **==> picture [459 x 136] intentionally omitted <==** **----- Start of picture text -----**<br> D1 D2<br>S1 D1<br>G1 D1<br>G1 G2<br>S2 D2<br>G2 D2 S1 S2<br>Q1 N-Channel Q2 P-Channel<br>Top View Top View<br>Equivalent Circuit<br>**----- End of picture text -----**<br> ## **Ordering Information** (Note 4) |**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)| |---|---|---|---|---| |||||| |**Product**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity per Reel**| |DMC4040SSD-13|C4040SD|13|12|2,500| - Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 1 of 10 **www.diodes.com** DMC4040SSD Document number: DS32120 Rev. 3 - 2 September 2015 © Diodes Incorporated **DMC4040SSD** ## **Marking Information** = Manufacturer’s Marking C4040SD = Product Type Marking Code **C4040SD** YYWW = Date Code Marking YY or YY= Year (ex: 10 = 2010) **YY WW** WW = Week (01 - 53) **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) ||**Characteristic**<br>**Symbol**<br>**N-Channel -Q1 **<br>**P-Channel -Q2 **<br>**Unit**<br>Drain-Source Voltage<br>VDSS<br>40<br>-40<br>V<br>Gate-Source Voltage<br>VGSS<br>20<br>20<br>Continuous Drain Current<br>VGS= 10V<br>(Notes 6 & 8)<br>ID<br>7.5<br>-7.5<br>A<br>TA= +70°C(Notes 6 & 8)<br>5.8<br>-5.8<br>(Notes 5 & 8)<br>5.7<br>-5.7<br>(Notes 5 & 9)<br>6.8<br>-6.8<br>Pulsed Drain Current<br>VGS= 10V<br>(Notes 7 & 8)<br>IDM<br>29.0<br>-29.0<br>Continuous Source Current(BodyDiode)<br>(Notes 6 & 8)<br>IS<br>3.0<br>-3.0<br>Pulsed Source Current(BodyDiode)<br>(Notes 7 & 8)<br>ISM<br>29.0<br>-29.0<br>~~er~~<br>~~fs SS~~<br>~~———~~<br>~~———~~|**Characteristic**<br>**Symbol**<br>**N-Channel -Q1 **<br>**P-Channel -Q2 **<br>**Unit**<br>Drain-Source Voltage<br>VDSS<br>40<br>-40<br>V<br>Gate-Source Voltage<br>VGSS<br>20<br>20<br>Continuous Drain Current<br>VGS= 10V<br>(Notes 6 & 8)<br>ID<br>7.5<br>-7.5<br>A<br>TA= +70°C(Notes 6 & 8)<br>5.8<br>-5.8<br>(Notes 5 & 8)<br>5.7<br>-5.7<br>(Notes 5 & 9)<br>6.8<br>-6.8<br>Pulsed Drain Current<br>VGS= 10V<br>(Notes 7 & 8)<br>IDM<br>29.0<br>-29.0<br>Continuous Source Current(BodyDiode)<br>(Notes 6 & 8)<br>IS<br>3.0<br>-3.0<br>Pulsed Source Current(BodyDiode)<br>(Notes 7 & 8)<br>ISM<br>29.0<br>-29.0<br>~~er~~<br>~~fs SS~~<br>~~———~~<br>~~———~~|**Characteristic**<br>**Symbol**<br>**N-Channel -Q1 **<br>**P-Channel -Q2 **<br>**Unit**<br>Drain-Source Voltage<br>VDSS<br>40<br>-40<br>V<br>Gate-Source Voltage<br>VGSS<br>20<br>20<br>Continuous Drain Current<br>VGS= 10V<br>(Notes 6 & 8)<br>ID<br>7.5<br>-7.5<br>A<br>TA= +70°C(Notes 6 & 8)<br>5.8<br>-5.8<br>(Notes 5 & 8)<br>5.7<br>-5.7<br>(Notes 5 & 9)<br>6.8<br>-6.8<br>Pulsed Drain Current<br>VGS= 10V<br>(Notes 7 & 8)<br>IDM<br>29.0<br>-29.0<br>Continuous Source Current(BodyDiode)<br>(Notes 6 & 8)<br>IS<br>3.0<br>-3.0<br>Pulsed Source Current(BodyDiode)<br>(Notes 7 & 8)<br>ISM<br>29.0<br>-29.0<br>~~er~~<br>~~fs SS~~<br>~~———~~<br>~~———~~|**Characteristic**<br>**Symbol**<br>**N-Channel -Q1 **<br>**P-Channel -Q2 **<br>**Unit**<br>Drain-Source Voltage<br>VDSS<br>40<br>-40<br>V<br>Gate-Source Voltage<br>VGSS<br>20<br>20<br>Continuous Drain Current<br>VGS= 10V<br>(Notes 6 & 8)<br>ID<br>7.5<br>-7.5<br>A<br>TA= +70°C(Notes 6 & 8)<br>5.8<br>-5.8<br>(Notes 5 & 8)<br>5.7<br>-5.7<br>(Notes 5 & 9)<br>6.8<br>-6.8<br>Pulsed Drain Current<br>VGS= 10V<br>(Notes 7 & 8)<br>IDM<br>29.0<br>-29.0<br>Continuous Source Current(BodyDiode)<br>(Notes 6 & 8)<br>IS<br>3.0<br>-3.0<br>Pulsed Source Current(BodyDiode)<br>(Notes 7 & 8)<br>ISM<br>29.0<br>-29.0<br>~~er~~<br>~~fs SS~~<br>~~———~~<br>~~———~~|**Characteristic**<br>**Symbol**<br>**N-Channel -Q1 **<br>**P-Channel -Q2 **<br>**Unit**<br>Drain-Source Voltage<br>VDSS<br>40<br>-40<br>V<br>Gate-Source Voltage<br>VGSS<br>20<br>20<br>Continuous Drain Current<br>VGS= 10V<br>(Notes 6 & 8)<br>ID<br>7.5<br>-7.5<br>A<br>TA= +70°C(Notes 6 & 8)<br>5.8<br>-5.8<br>(Notes 5 & 8)<br>5.7<br>-5.7<br>(Notes 5 & 9)<br>6.8<br>-6.8<br>Pulsed Drain Current<br>VGS= 10V<br>(Notes 7 & 8)<br>IDM<br>29.0<br>-29.0<br>Continuous Source Current(BodyDiode)<br>(Notes 6 & 8)<br>IS<br>3.0<br>-3.0<br>Pulsed Source Current(BodyDiode)<br>(Notes 7 & 8)<br>ISM<br>29.0<br>-29.0<br>~~er~~<br>~~fs SS~~<br>~~———~~<br>~~———~~| |---|---|---|---|---|---| ||||||| |**Thermal Characteristics **|||||| ||||||| ||**Characteristic**||**Symbol**|**N-Channel -Q1 **<br>**P-Channel -Q2 **|**Unit**| |||(Notes 5 & 8)||1.25<br>10|| ||Power Dissipation<br>Linear Derating Factor|(Notes 5 & 9)|PD|1.8<br>14.3|W<br>mW/°C| |||(Notes 6 & 8)||2.14<br>17.2|| |||(Notes 5 & 8)||100|| ||Thermal Resistance, Junction to Ambient|(Notes 5 & 9)<br>(Notes 6 & 8)|RθJA|70<br>58|°C/W| ||Thermal Resistance,Junction to Lead|(Notes 5 & 10)|RθJL|51|| ||Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C| - Notes: 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Same as note (5), except the device is measured at t 10 sec. 7. Same as note (5), except the device is pulsed with D = 0.02 and pulse width 300µs. 8. For a dual device with one active die. 9. For a device with two active die running at equal power. 10. Thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 10 **www.diodes.com** DMC4040SSD Document number: DS32120 Rev. 3 - 2 September 2015 © Diodes Incorporated **DMC4040SSD** ## **Thermal Characteristics** (Continued) **==> picture [436 x 355] intentionally omitted <==** **----- Start of picture text -----**<br> R DS(ON) ===. a_i RDS(ON) ===...<br>10 Limited 10 Limited<br>pee NN TSS Poe aa<br>1 DC 1 DC<br>ae a, SS SU SiS ea a,SS a<br>1s 1s<br>100ms 100ms<br>100m een 10ms yin, Shs! 100m Seem 10ms LTA NI<br>Single Pulsegle Pulsele Pulse 1ms Single Pulse 1ms<br>T amb = 25 ° C 100us Tamb= 25°C 100us<br>10m One active die ==ee-] 10m One active die F——-FAtf| yyy EHff -|<br>0.1 1 10 0.1 1 10<br>VDS Drain-Source Voltage (V)DS Drain-Source Voltage (V) Drain-Source Voltage (V) -VDS Drain-Source Voltage (V)<br>N-channel Safe Operating Area P-channel Safe Operating Area<br>2.0<br>100 R(theta junction-to-ambient), R JA om TTT TTT<br>One active die L TTI<br>80 zo"AriMMII 1.5 PNXQ Two active die 7]<br>aE? PND | |<br>60 D=0.5 One active die<br>1.0<br>Pcie et Wf TT XK |<br>40 CTASel “MA A PNAS<br>TH TACT XS<br>D=0.2 Single Pulse<br>0.5<br>cr A CCCI<br>20 D=0.05<br>OZ | PIN A<br>0 CTSeASCt D=0.1 ollllCTTCT 0.0 PoSN<br>100µ 1m 10m 100m 1 10 100 1k 0 25 50 75 100 125 150<br>Pulse Width (s) Temperature (°C)<br>Transient Thermal Impedance Derating Curve<br> Drain Current (A)IDIDD Drain Current (A)-ID<br>Thermal Resistance (°C/W) Max Power Dissipation (W)<br>**----- End of picture text -----**<br> **==> picture [183 x 150] intentionally omitted <==** **----- Start of picture text -----**<br> R<br>DS(ON)<br>10 Limited<br>pee<br>DC<br>1<br>ae a, SS SU<br>1s<br>100ms<br>100m een 10ms yin,<br>Single Pulsegle Pulsele Pulse 1ms<br>T = 25 ° C 100us<br>amb<br>10m One active die<br>0.1 1 10<br>VDS Drain-Source Voltage (V)DS Drain-Source Voltage (V) Drain-Source Voltage (V)<br> Drain Current (A)IDIDD<br>**----- End of picture text -----**<br> **==> picture [215 x 144] intentionally omitted <==** **----- Start of picture text -----**<br> Single Pulse<br>100 aam,ee ee T amb = 25°C | HH<br>One active die<br>SN<br>PIE ae He<br>2 TIN TTI TTT PTT<br>10 ATITITSTUM CTT<br>PTO TT TTT TT TT TT TTT<br>PT TT TINCT PTT<br>Rl<br>1 TIVE EET ETE EI LT TiS Coa<br>100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s)<br>Maximum Power (W)<br>**----- End of picture text -----**<br> **Pulse Power Dissipation** 3 of 10 **www.diodes.com** DMC4040SSD Document number: DS32120 Rev. 3 - 2 September 2015 © Diodes Incorporated **DMC4040SSD** **Electrical Characteristics** (Q1 N-Channel) (@TA = +25°C, unless otherwise specified.) **==> picture [522 x 274] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---| |Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition| |OFF CHARACTERISTICS| |Drain-Source Breakdown Voltage|BVDSS|40|||V|ID = 250µA, VGS= 0V| |Zero Gate Voltage Drain Current|IDSS|||1.0|µA|VDS= 40V, VGS= 0V| |ee|Gate-Source Leakage|IGSS|||100|nA|VGS= 20V, VDS= 0V| |ON CHARACTERISTICS| |TD|Gate Threshold Voltage|VGS(th)|0.8|1.3|1.8|V|ID= 250µA, VDS= VGS| |a|Static Drain-Source On-Resistance (Note 11)|RDS(ON)|TD|OD||UD|0.013 0.028|—(OO|0.025 0.040|(|Ω|(———————|VVGSGS= 10V= 4.5V,, I IDD= 3A = 3A| |Forward Transconductance (Notes 11 & 12)|Gfs||12.6||S|VDS= 5V, ID= 3A| |rr|Diode Forward Voltage (Note 11)|VSD||0.7|1.0|V|IS= 1A, VGS= 0V| |DYNAMIC CHARACTERISTICS|(Note 12)| |Re|Input Capacitance|Ciss||1,790|| |Output Capacitance|Coss||160||pF|VDS= 20V, VGS= 0V| |f= 1MHz| |Reverse Transfer Capacitance|Crss||120|| |Gate Resistance|Rg||1.03||Ω|VDS= 0V, VGS= 0V, f= 1MHz| |Total Gate Charge (Note 13)|Qg||16.0||VGS= 4.5V| |Total Gate Charge (Note 13)|Qg||37.6||nC|VDS= 20V| |Gate-Source Charge (Note 13)|Qgs||7.8||VGS= 10V|ID= 3A| |Gate-Drain Charge (Note 13)|Qgd||6.6|| |Turn-On Delay Time (Note 13)|tD(on)||8.1|| |ee|Turn-On Rise Time (Note 13)|tr||15.1||nS|VDD= 20V, VGS= 10V| |Turn-Off Delay Time (Note 13)|tD(off)||24.3||ID= 3A| |Turn-Off Fall Time (Note 13)|tf||5.3|| |SSS|Sc| **----- End of picture text -----**<br> ## **Electrical Characteristics** (Q2 P-Channel) (@TA = +25°C, unless otherwise specified.) **==> picture [523 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||||| |---|---|---|---|---|---|---|---|---|---|---| |Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition| |OFF CHARACTERISTICS| |Drain-Source Breakdown Voltage|BVDSS|-40|||V|ID = -250µA, VGS = 0V| |Zero Gate Voltage Drain Current|IDSS|||-1.0|µA|VDS = -40V, VGS = 0V| |ee|Gate-Source Leakage|IGSS|||100|nA|VGS = 20V, VDS = 0V| |ON CHARACTERISTICS| |I|Gate Threshold Voltage|VGS(th)|DO|-0.8|-1.3|-1.8|(|V|(|ID = -250µA, VDS = VGS| |Static Drain-Source On-Resistance (Note 11)|RDS(ON)||0.018 0.030|0.025 0.045|Ω|VVGSGS = -10V = -4.5V,, I IDD = -3A = -3A| |ee|Forward Transconductance (Notes 11 & 12)|Gfs||16.6|–|S|VDS = -5V, ID = -3A| |I|Diode Forward Voltage (Note 11)|VSD|DO||-0.7|-1.0|(GO|V|IS = -1A, VGS = 0V| |DYNAMIC CHARACTERISTICS|(Note 12)| |Input Capacitance|Ciss||1,643|| |Output Capacitance|Coss||179||pF|VDS = -20V, VGS = 0V| |f = 1MHz| |err|Reverse Transfer Capacitance|Crss||128|| |Gate Resistance|Rg||6.43||Ω|VDS = 0V, VGS = 0V, f = 1MHz| |Total Gate Charge (Note 13)|Qg||14.0||VGS = -4.5V| |ee|Total Gate Charge (Note 13)|Qg||33.7||nC|VDS = -20V| |Gate-Source Charge (Note 13)|Qgs||5.5||VGS = -10V|ID = -3A| |Gate-Drain Charge (Note 13)|Qgd||7.3|| |Turn-On Delay Time (Note 13)|tD(on)||6.9|| |||Turn-On Rise Time (Note 13)|tr||14.7||VDD = -20V, VGS = -10V| |nS| |Turn-Off Delay Time (Note 13)|tD(off)||53.7||ID = -3A| |Turn-Off Fall Time (Note 13)|tf||30.9|| |—————|ee| |Notes:|11. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%| |12. For design aid only, not subject to production testing.| **----- End of picture text -----**<br> 13. Switching characteristics are independent of operating junction temperatures. 4 of 10 **www.diodes.com** DMC4040SSD Document number: DS32120 Rev. 3 - 2 September 2015 © Diodes Incorporated **DMC4040SSD** ## **Typical Characteristics** (Q1 N-Channel) **==> picture [481 x 650] intentionally omitted <==** **----- Start of picture text -----**<br> 30 30<br>25 VGS = 8.0V 25 VDS = 5V<br>20 SS] VGS = 4.5V 20 tty<br>15 15<br>fit VGS = 4.0V ooo<br>10 10<br>17)ane MEEA<br>VGS = 3.5V TA = 150°C<br>5 5 T A = 125°C TA = 25°CT A = 85°C<br>VGS = 2.5V VGS = 3.0V TA = -55°C<br>0 y——— 0<br>0 0.5 1 1.5 2 0 1 2 3 4 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristic Fig. 2 Typical Transfer Characteristic<br>0.06 0.04<br>VGS = 10V<br>COE oe<br>0.05<br>0.03<br>0.04<br>coe EEE<br>TA = 150°C<br>0.03 0.02<br>Copy VGS = 4.5V = EEE TA = 125°C<br>T A = 85°C<br>0.02<br>TA = 25°C<br>— 0.01 eE=<br>0.01 V GS = 10V TA = -55°C<br>ae CE<br>0 PPPIT 0<br>0 5 10 15 20 25 ET) 30 ©) Seer 0 5 10 15 20 25 30<br>ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A)<br>Fig. 3 Typical On-Resistance Fig. 4 Typical On-Resistance<br>vs. Drain Current and Gate Voltage vs. Drain Current and Temperature<br>1.7 0.06<br>1.5 V GS = 10V 0.05<br>ID = 20A<br>1.3 co] 0.04 Ae<br>1.1 TUZ VGSID = 10A = 4.5V 0.03 FREE| V I GS D = 10A = 4.5V<br>0.9 0.02<br>ee | ee EE<br>0.7 0.01 V GS = 10V<br>ID = 20A<br>0.5 eeSoe 0 Cee<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)<br>Fig. 5 On-Resistance Variation with Temperature<br>Fig. 6 On-Resistance Variation with Temperature<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>D<br>, DRAIN CURRENT (A)<br>I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DSON<br>, DRAIN-SOURCE<br>DSON<br>R<br>ON-RESISTANCE (NORMALIZED)<br>, DRAIN CURRENT (A)<br>ID<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> 5 of 10 **www.diodes.com** DMC4040SSD Document number: DS32120 Rev. 3 - 2 September 2015 © Diodes Incorporated **DMC4040SSD** **==> picture [219 x 655] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0<br>2.7 | [| | ft [ff]<br>2.4 Pt | | | ff |<br>2.1 Pt | | tf ft ff<br>1.8 Pt | | | ff |<br>1.5 ID = 1mA<br>1.2 a<br>ee<br>0.9 Poff | ID = 250µA p=<br>0.6<br>P| | | | ft<br>0.3 P| | | ft ff ff<br>0 Ff | | | ft ft fl<br>-50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature<br>10,000 BS=<br>Ciss<br>1,000<br>| | | , | [|<br>———<br>Se<br>Coss<br>100 SSa C rss<br>ee eo<br>— f = 1MHz<br>10<br>ITT EE<br>0 5 10 15 20 25 30<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Typical Total Capacitance<br>10<br>8 VDS = 20V<br>ID = 12A<br>6 eaLLL<br>4 oYEan<br>2 ft<br>0 ZEEE<br>0 5 10 15 20 25 30 35 40<br>Qg, TOTAL GATE CHARGE (nC)<br>Fig. 11 Gate-Charge Characteristics<br>C, CAPACITANCE (pF)<br>GS(TH)<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>, GATE-SOURCE VOLTAGE (V)<br>V<br>GS<br>**----- End of picture text -----**<br> **==> picture [217 x 444] intentionally omitted <==** **----- Start of picture text -----**<br> 2018 Pt | ft | | |lf<br>16 Pt | tt | Le<br>14 a TA = 25 ° C<br>12 Pf ff po<br>10<br>8 Pi]Pi tt| tttt| tAtd<br>6 Pt | ft | | deve<br>4<br>Pitt ty yt tt<br>2 Pi] tt<br>0 Pi | ELtél| yi<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 8 Diode Forward Voltage vs. Current<br>10,000 ==== SS<br>1,000 SEES TA = 150°C<br>— =<br>=== T A = 125°C<br>100<br>==oT T A = 85°C<br>10 a<br>TA = 25°C<br>———<br>1<br>SS<br>0 5 10 15 20 25 30 35 40<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 10 Typical Leakage Current<br>vs. Drain-Source Voltage<br>, LEAKAGE CURRENT (nA)<br>IDSS<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br> 6 of 10 **www.diodes.com** DMC4040SSD Document number: DS32120 Rev. 3 - 2 September 2015 © Diodes Incorporated **DMC4040SSD** ## **Typical Characteristics** (Q2 P-Channel) **==> picture [479 x 647] intentionally omitted <==** **----- Start of picture text -----**<br> 30 30<br>25 25 VDS = -5V TA = 150°C<br>TA = 85°C<br>20 pas 20 ff T A = 25°C TA = 125 ° C<br>TA = -55°C<br>15 ia 15 Ff<br>La yd<br>10 10<br>5 | Za 5 LEELA.<br>7am oe<br>0 Le 0 A<br>0 0.5 1 1.5 2 0 1 2 3 4 5<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 12 Typical Output Characteristic Fig. 13 Typical Transfer Characteristic<br>0.05 0.04<br>V GS = -10V<br>0.04<br>a<br>0.03<br>TA = 150°C<br>0.03 VGS = -4.5V T A = 125°C<br>TA = 85°C<br>0.02<br>=ee=<br>0.02 TA = 25°C<br>a<br>VGS = -10V TA = -55°C<br>0.01 “TTT Tt<br>0.01<br>tf ET yy<br>0 0 Tt<br>0 5 10 15 20 25 30 0 ft 5 10 tt 15 20 25 30<br>-ID, DRAIN-SOURCE CURRENT (A) -ID, DRAIN CURRENT (A)<br>Fig. 14 Typical On-Resistance Fig. 15 Typical On-Resistance<br>vs. Drain Current and Gate Voltage vs. Drain Current and Temperature<br>1.7 0.06<br>1.5 V GS = -10V 0.05<br>ID = -20A<br>1.3 0.04<br>co VGS = -4.5V ae<br>ID = -10A<br>1.1 0.03 VGS = -4.5V<br>tte = CT ID = -10A<br>0.9 0.02<br>tbr | perTeyad V p GS = -10V e eea<br>ID = -20A<br>0.7 Zane 0.01 aT<br>0.5 0 PLE LEE<br>-50 LEE -25 0 25 50 [EEE] 75 100 125 150 -50 -25 0 25 tT. 50 75 100 | 125 150<br>TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)<br>Fig. 16 On-Resistance Variation with Temperature Fig. 17 On-Resistance Variation with Temperature<br>D<br>, DRAIN CURRENT (A)<br>-I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DSON<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>, DRAIN-SOURCE<br>DSON<br>R<br>ON-RESISTANCE (NORMALIZED)<br>, DRAIN CURRENT (A)<br>-I<br>D<br>**----- End of picture text -----**<br> 7 of 10 **www.diodes.com** DMC4040SSD Document number: DS32120 Rev. 3 - 2 September 2015 © Diodes Incorporated **DMC4040SSD** ro ## LoS. **==> picture [222 x 654] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0<br>1.5<br>1.0 I D = -1mA<br>ID = -250µA<br>0.5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C)<br>Fig. 18 Gate Threshold Variation vs. Ambient Temperature<br>10,000<br>———<br>Ciss<br>1,000<br>| | [| | |<br>Se<br>St C oss<br>“SS<br>100 Crss<br>_—<br>——<br>sees ee es<br>10 TOTTI<br>0 5 10 15 20 25 30<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 20 Typical Total Capacitance<br>10<br>8 LLL VDS = -20V TA<br>ID = -12A<br>6 To A<br>4 LYELL<br>2 CELL<br>0<br>0 5 10 15 20 25 30 35 40<br>Qg, TOTAL GATE CHARGE (nC)<br>Fig. 22 Gate-Charge Characteristics<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>-V<br>C, CAPACITANCE (pF)<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>-V<br>**----- End of picture text -----**<br> **==> picture [215 x 442] intentionally omitted <==** **----- Start of picture text -----**<br> 2018 PfCCEft ttEECILeeye<br>16<br>14 TA = 25°C<br>1210 fe“CECEPf; ft tt tePre<br>COC<br>864 PitCCE|tLeEEEECeeOC<br>2 Pi ttt tA tt<br>0 WCE LEC<br>0.2 0.4 0.6 0.8 1.0 1.2<br>-VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 19 Diode Forward Voltage vs. Current<br>10,000<br>TA = 150°C<br>SS ae<br>1,000 ee<br>T A = 125°C<br>== — a=<br>100 P| ft | |<br>==<br>TA = 85°C<br>ee<br>10 pT} | tT<br>SSSa SSSSS TA = 25°C SS<br>1 aee eee<br>0 5 10 15 20 25 30 35 40<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 21 Typical Leakage Current<br>vs. Drain-Source Voltage<br>DSS<br>, LEAKAGE CURRENT (nA)<br>-I<br>, SOURCE CURRENT (A)<br>S<br>-I<br>**----- End of picture text -----**<br> 8 of 10 **www.diodes.com** DMC4040SSD Document number: DS32120 Rev. 3 - 2 September 2015 © Diodes Incorporated **DMC4040SSD** ## **Package Outline Dimensions** Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. **==> picture [397 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> SO-8<br>SO-8<br>Dim Min Max<br>A — 1.75<br>E1 E A1 0.10 0.20<br>Gauge Plane A2 1.30 1.50<br>A1 L Seating Plane A3 0.15 0.25<br>A,<br>b 0.3 0.5<br>Detail ‘A’ D 4.85 4.95<br>E 5.90 6.10<br>h 7°~9° E1 3.85 3.95<br>45° e 1.27 Typ<br>Detail ‘A’ h — 0.35<br>A2 A A3 L 0.62 0.82<br> 0° 8°<br>e b ——<br>All Dimensions in mm<br>D<br>0.254<br>**----- End of picture text -----**<br> ## **Suggested Pad Layout** Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. **==> picture [22 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> SO-8<br>**----- End of picture text -----**<br> **==> picture [94 x 109] intentionally omitted <==** **----- Start of picture text -----**<br> X<br>Woe sy<br>C1<br>C2<br>Y<br>whe<br>**----- End of picture text -----**<br> **==> picture [103 x 46] intentionally omitted <==** **----- Start of picture text -----**<br> Dimensions Value (in mm)<br>X 0.60<br>Y 1.55<br>C1 5.4<br>C2 1.27<br>**----- End of picture text -----**<br> 9 of 10 **www.diodes.com** DMC4040SSD Document number: DS32120 Rev. 3 - 2 September 2015 © Diodes Incorporated **DMC4040SSD** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. ## **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: - A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. - B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated **www.diodes.com** 10 of 10 **www.diodes.com** DMC4040SSD Document number: DS32120 Rev. 3 - 2 September 2015 © Diodes Incorporated
Updated at June 9, 2026
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