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DMC4029SSDQ-13
Dual MOSFET, Complementary N and P Channel, 40 V, 40 V, 7 A, 7 A, 0.024 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: AEC-Q101
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.8W
- Power Dissipation P Channel: 1.8W
- Drain Source Voltage Vds N Channel: 40V
- Drain Source Voltage Vds P Channel: 40V
- Continuous Drain Current Id N Channel: 7A
- Continuous Drain Current Id P Channel: 7A
- Drain Source On State Resistance N Channel: 0.024ohm
- Drain Source On State Resistance P Channel: 0.045ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.282 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**DMC4029SSD**
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COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET<br>Product Summary Features and Benefits<br>Device V(BR)DSS RDS(on) max TA = +25°C ID •• Low Input Capacitance Low On-Resistance<br>Q2 40V 24mΩ @ VGS = 10V 9.0A • Fast Switching Speed<br>32mΩ @ VGS = 4.5V 7.8A • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)<br>Q1 -40V 45mΩ @ VGS = -10V -6.5A • Halogen and Antimony Free. “Green” Device (Note 3)<br>55mΩ @ VGS = -4.5V -5.9A<br>• Qualified to AEC-Q101 Standards for High Reliability<br>Description Mechanical Data<br>This new generation MOSFET has been designed to minimize the on- • Case: SO-8<br>state resistance (RDS(on)) and yet maintain superior switching • Case Material: Molded Plastic, “Green” Molding Compound.<br>performance, making it ideal for high efficiency power management UL Flammability Classification Rating 94V-0<br>applications. • Moisture Sensitivity: Level 1 per J-STD-020<br>• Terminal Connections: See Diagram<br>Applications • Terminals: Finish – Tin Finish annealed over Copper leadframe.<br>Solderable per MIL-STD-202, Method 208 e3<br>• DC-DC Converters • Weight: 0.074 grams (approximate)<br>: TTT • Power Management Functions ©<br>• Backlighting<br>D2 D1<br>S2 8| D2<br>G2 D2<br>S1 6] D1 G2 G1<br>G1 D1<br>S2 S1<br>TOP VIEW<br>Top View Internal Schematic N-Channel MOSFET P-Channel MOSFET<br>ADVANCE INFORMATION<br>NEW PRODUCT<br>**----- End of picture text -----**<br>
## **Ordering Information** (Note 4 & 5)
|**Ordering Informationg Information Information** (Note 4 & 5)|**Ordering Informationg Information Information** (Note 4 & 5)|**Ordering Informationg Information Information** (Note 4 & 5)|**Ordering Informationg Information Information** (Note 4 & 5)|
|---|---|---|---|
|||||
|**Part Number**|**Compliance**|**Case**|**Packaging**|
|DMC4029SSD-13|Standard|SO-8|2,500/Tape & Reel|
|DMC4029SSDQ-13|Automotive|SO-8|2,500/Tape & Reel|
- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
## **Marking Information**
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Top View<br>8 5<br>FLT TTL tI<br>Logo<br>C4029SD Part no.<br>YY WW<br>Xth week: 01 ~ 53<br>ot Year: “13” = 2013<br>1 4<br>1 of 8<br>www.diodes.com<br>**----- End of picture text -----**<br>
DMC4029SSD Document number: DS36350 Rev. 3 - 2
March 2014 © Diodes Incorporated
**DMC4029SSD**
## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.)
|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|||**Symbol**|**Value_Q2 **|**Value_Q1 **|**Units**|
|Drain-Source Voltage|||VDSS|40|-40|V|
|Gate-Source Voltage|||VGSS|±20|±20|V|
|Continuous Drain Current (Note 7) VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|7.0<br>5.6|-5.1<br>-4.1|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|9.0<br>7.2|-6.5<br>-5.2|A|
|Maximum BodyDiode Forward Current(Note 7)|||IS|2.5|-2.5|A|
|Pulsed Drain Current(10µspulse,dutycycle = 1%)|||IDM|70|-40|A|
## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)
|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation (Note 6)|TA= +25°C|PD|1.3|W|
||TA= +70°C||0.8||
|Thermal Resistance, Junction to Ambient (Note 6)|Steadystate|RθJA|98|°C/W|
||t<10s||59||
|Total Power Dissipation (Note 7)|TA= +25°C|PD|1.8|W|
||TA= +70°C||1.1||
|Thermal Resistance, Junction to Ambient (Note 7)|Steadystate|RθJA|71|°C/W|
||t<10s||43||
|Thermal Resistance,Junction to Case(Note 7)||RθJC|11.8||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|
## **Electrical Characteristics N-Channel Q2** (@TA = +25°C, unless otherwise specified.)
|**Electrical Characteristics N-Channel** **Q2** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-Channel** **Q2** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-Channel** **Q2** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-Channel** **Q2** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-Channel** **Q2** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-Channel** **Q2** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-Channel** **Q2** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS**(Note 8)|||||||
|Drain-Source Breakdown Voltage|BVDSS|40|⎯|⎯|V|VGS= 0V,ID= 250µA|
|Zero Gate Voltage Drain Current|IDSS|⎯|⎯|1|µA|VDS= 40V,VGS= 0V|
|Gate-Source Leakage|IGSS|⎯|⎯|±100|nA|VGS= ±20V,VDS= 0V|
|**ON CHARACTERISTICS**(Note 8)<br>~~—————=———~~|||||||
|Gate Threshold Voltage<br>~~—————=———~~|VGS(th)<br>~~—————=———~~|1.0<br>~~—————=———~~|⎯<br>~~—————=———~~|3.0<br>~~—————=———~~|V<br>~~—————=———~~|VDS= VGS,ID= 250µA<br>~~—————=———~~|
|Static Drain-Source On-Resistance<br>~~—————=———~~|RDS(ON)<br>~~—————=———~~|⎯<br>~~—————=———~~|15<br>~~—————=———~~|24<br>~~—————=———~~|mΩ<br>~~—————=———~~|VGS= 10V,ID= 6A<br>~~—————=———~~|
|||⎯<br>~~—————=———~~|20<br>~~—————=———~~|32<br>~~—————=———~~||VGS= 4.5V,ID= 5A<br>~~—————=———~~|
|Diode Forward Voltage<br>~~—————=———~~|VSD<br>~~—————=———~~|⎯<br>~~—————=———~~|0.7<br>~~—————=———~~|1.0<br>~~—————=———~~|V<br>~~—————=———~~|VGS= 0V,IS= 1.0A<br>~~—————=———~~|
|**DYNAMIC CHARACTERISTICS**(Note 9)|||||||
|Input Capacitance|Ciss|⎯|1060|⎯|pF|VDS= 20V, VGS= 0V,<br>f = 1.0MHz|
|Output Capacitance|Coss|⎯|84|⎯|||
|Reverse Transfer Capacitance|Crss|⎯|58|⎯|||
|Gate Resistance|RG|⎯|1.6|⎯|Ω|VDS= 0V,VGS= 0V,f = 1.0MHz|
|Total Gate Charge(VGS= 4.5V)|Qg|⎯|8.8|⎯|nC|VDS= 20V, ID= 8A|
|Total Gate Charge(VGS= 10V)|Qg|⎯|19.1|⎯|||
|Gate-Source Charge|Qgs|⎯|3.0|⎯|||
|Gate-Drain Charge|Qgd|⎯|2.5|⎯|||
|Turn-On DelayTime|tD(on)|⎯|5.3|⎯|nS|VDD= 25V, RL= 2.5Ω<br>VGS= 10V, RG= 3Ω|
|Turn-On Rise Time<br>~~FE~~|tr<br>~~FE~~|⎯|7.1|⎯|||
|Turn-Off DelayTime<br>~~FE~~|tD(off)<br>~~FE~~|⎯|15.1|⎯|||
|Turn-Off Fall Time<br>~~FE~~|tf<br>~~FE~~|⎯|4.8|⎯|||
|BodyDiode Reverse RecoveryTime<br>~~FE~~|trr<br>~~FE~~|⎯|10.5|⎯|nS|IF= 8A,di/dt = 100A/μs|
|BodyDiode Reverse RecoveryCharge|Qrr|⎯|4.15|⎯|nC|IF= 8A,di/dt = 100A/μs|
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DMC4029SSD Document number: DS36350 Rev. 3 - 2
March 2014 © Diodes Incorporated
**DMC4029SSD**
## **Electrical Characteristics P-Channel Q1** (@TA = +25°C, unless otherwise specified.)
|**Electrical Characteristics P-Channel** **Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-Channel** **Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-Channel** **Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-Channel** **Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-Channel** **Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-Channel** **Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-Channel** **Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS**(Note 8)|||||||
|Drain-Source Breakdown Voltage|BVDSS|-40|⎯|⎯|V|VGS= 0V,ID= -250µA|
|Zero Gate Voltage Drain Current|IDSS|⎯|⎯|-1|µA|VDS= -40V,VGS= 0V|
|Gate-Source Leakage|IGSS|⎯|⎯|±100|nA|VGS= ±20V,VDS= 0V|
|**ON CHARACTERISTICS**(Note 8)<br>~~ee~~|||||||
|Gate Threshold Voltage<br>~~es~~|VGS(th)<br>~~es~~<br>~~ee~~|-1.0<br>~~es~~<br>~~ee~~|⎯<br>~~es~~<br>~~ee~~|-3.0<br>~~es~~<br>~~ee~~|V<br>~~es~~<br>~~ee~~|VDS= VGS,ID= -250µA<br>~~es~~|
|Static Drain-Source On-Resistance<br>~~es~~|RDS(ON)<br>~~es~~<br>~~ee~~|⎯<br>~~es~~<br>~~ee~~|33<br>~~es~~<br>~~ee~~|45<br>~~es~~<br>~~ee~~|mΩ<br>~~es~~<br>~~ee~~|VGS= -10V,ID= -5A<br>~~es~~|
|||⎯<br>~~es~~<br>~~ee~~|40<br>~~es~~<br>~~ee~~|55<br>~~es~~<br>~~ee~~||VGS= -4.5V,ID= -4A<br>~~es~~|
|Diode Forward Voltage<br>~~es~~|VSD<br>~~es~~<br>~~ee~~|⎯<br>~~es~~<br>~~ee~~|-0.7<br>~~es~~<br>~~ee~~|-1.0<br>~~es~~<br>~~ee~~|V<br>~~es~~<br>~~ee~~|VGS= 0V,IS= -1.0A<br>~~es~~|
|**DYNAMIC CHARACTERISTICS**(Note 9)<br>~~ee~~<br>~~eeee~~|||||||
|Input Capacitance<br>~~ee~~|Ciss<br>|⎯<br>~~ee~~|1154<br>~~ee~~|⎯<br>~~ee~~|pF<br>~~ee~~|VDS= -20V, VGS= 0V<br>f = 1.0MHz|
|Output Capacitance<br>~~ee~~|Coss<br>|⎯<br>~~ee~~|84<br>~~ee~~|⎯<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~ee~~|Crss<br>|⎯<br>~~ee~~|66<br>~~ee~~|⎯<br>~~ee~~|||
|Gate Resistance<br>~~ee~~<br>~~Se~~|RG<br><br>~~Se~~|⎯<br>~~ee~~<br>~~Se~~|12.6<br>~~ee~~<br>~~oe~~|⎯<br>~~ee~~<br>~~oe~~|Ω<br>~~ee~~<br>~~oe~~|VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~ee~~|
|Total Gate Charge(VGS= -4.5V)<br>~~ee ~~<br>~~———~~<br>~~Se~~|Qg<br> <br>~~———~~<br>~~Se~~|⎯<br> ~~ee~~<br>~~———~~<br>~~Se~~|10.6<br>~~ee~~<br>~~———~~<br>~~oe~~|⎯<br>~~ee~~<br>~~———~~<br>~~oe~~|nC<br>~~ee~~<br>~~———~~<br>~~oe~~|VDS= -20V, ID= -4.9A<br>~~———~~<br>~~ee~~|
|Total Gate Charge(VGS= -10V)<br>~~———~~<br>~~Se~~|Qg<br>~~———~~<br>~~Se~~|⎯<br>~~———~~<br>~~Se~~|21.5<br>~~———~~<br>~~oe~~|⎯<br>~~———~~<br>~~oe~~|||
|Gate-Source Charge<br>~~———~~<br>~~Se~~|Qgs<br>~~———~~<br>~~Se~~|⎯<br>~~———~~<br>~~Se~~|2.2<br>~~———~~<br>~~oe~~|⎯<br>~~———~~<br>~~oe~~|||
|Gate-Drain Charge<br>~~———~~<br>~~Se~~|Qgd<br>~~———~~<br>~~Se~~|⎯<br>~~———~~<br>~~Se~~|3.3<br>~~———~~<br>~~oe~~|⎯<br>~~———~~<br>~~oe~~|||
|Turn-On DelayTime<br>~~———~~<br>~~Se~~|tD(on)<br>~~———~~<br>~~Se~~|⎯<br>~~———~~<br>~~Se~~|8.7<br>~~———~~<br>~~oe~~|⎯<br>~~———~~<br>~~oe~~|nS<br>~~———~~<br>~~oe~~<br>~~|~~|VDS= -20V, ID= -3.9A<br>VGS= -4.5V, RG= 1Ω<br>~~———~~<br>~~ee~~<br>~~|~~|
|Turn-On Rise Time<br>~~Se~~|tr<br>~~Se~~|⎯<br>~~Se~~|19.6<br>~~oe~~|⎯<br>~~oe~~|||
|Turn-Off DelayTime<br>~~Se~~|tD(off)<br>~~Se~~|⎯<br>~~Se~~|34.9<br>~~oe~~|⎯<br>~~oe~~|||
|Turn-Off Fall Time<br>~~Se~~|tf<br>~~Se~~|⎯<br>~~Se~~|25.5<br>~~oe~~|⎯<br>~~oe~~|||
|BodyDiode Reverse RecoveryTime<br>~~Se~~|trr<br>~~Se~~|⎯<br>~~Se~~|9.61<br>~~oe~~|⎯<br>~~oe~~|nS<br>~~oe ~~<br>~~|~~|IS= -3.9A,dI/dt = 100A/μs<br> ~~ee~~<br>~~|~~|
|BodyDiode Reverse RecoveryCharge|Qrr|⎯|3.3|⎯|nC|IS= -3.9A,dI/dt = 100A/μs|
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
**N-Channel Q2**
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20.0 VGS = 10V<br>VGS = 5.0V VDS = 5.0V<br>VGS = 4.5V VGS = 3.5V<br>Boo VGS = 4.0V Poy<br>15.0<br>_ NnGmnnee<br>10.0 yf? T A = 150°C Ane<br>TA = 125°C<br>oT<br>5.0 V GS = 3.0V TA = 85°C<br>T A = 25°C<br>TA = -55°C<br>VGS = 2.5V<br>0.0 ane fh<br>0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristic Figure 2 Typical Transfer Characteristics<br>, DRAIN CURRENT (A)<br>D<br> I , DRAIN CURRENT (A)<br>D<br> I<br>**----- End of picture text -----**<br>
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DMC4029SSD Document number: DS36350 Rev. 3 - 2
March 2014 © Diodes Incorporated
**DMC4029SSD**
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0.0240.022 TO oI 0.180.2 |<br>0.02 V GS = 4.5V 0.16<br>0.14 I D = 5.0A<br>0.018 a eee fo<br>0.12<br>0.016 ve | ff 0.1 |<br>VGS = 10V<br>0.08<br>0.014 —_ {|_| fT 1<br>0.06<br>0.012 a<br>0.04 a<br>0.01 a<br>0.02<br>0.008 | | ft ft | 0 pNPoeft<br>0 5 10 15 20 3 4 5 6 7 8<br>ID, DRAIN-SOURCE CURRENT (A) -VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs. Figure 4 Typical Transfer Characteristic<br>Drain Current and Gate Voltage<br>0.05 2<br>VGS = 4.5V<br>0.045 VGS 10= V<br>0.04 ee ee ee ID = 10A L<br>ee TA = 150°C 1.5 47<br>0.035 ee TA = 125°C Sf VGS = 4.5V<br>0.03 T A = 85°C ID = 5A<br>==<br>TE 1 ra<br>0.025<br>TA = 25°C<br>0.02 ee eee —<br>TA = -55°C<br>0.015 i 0.5 an<br>0.01 ie a<br>0.005<br>0 Ire 0<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 5 Typical On-Resistance vs. Figure 6 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>0.04 TTP 2.83 WCEEELLE<br>0.035<br>VGS = 4.5V 2.6<br>0.03 | fi I D = 5A 4 Pitt | tt ft ft<br>2.4<br>ca Tle Eee<br>0.025<br>2.2<br>oo. SEEELELL<br>0.02 PeerSessa VIGSD = 10A 10= V 1.82 PSsTOSCO ID = 250µA I D = 1mA<br>0.015<br>1.6<br>0.01<br>cert Trt yT )) =r 1.4 AF [PPS]<br>0.005 P| RRA<br>| | tt fl 1.2 A<br>0 ett tt | LL 1 PEPE e<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Ambient Temperature<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE ( ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>)Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>DS(ON) V<br>R<br>**----- End of picture text -----**<br>
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DMC4029SSD Document number: DS36350 Rev. 3 - 2
March 2014 © Diodes Incorporated
**DMC4029SSD**
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30<br>25 eee ||<br>ee<br>20 ||<br>TA = 150°C<br>15 T A = 125°C<br>TA = 85°C<br>10 a7_ | TA = 25°C<br>TA = -55°C<br>5<br>HH<br>0 BT)<br>0 0.3 0.6 0.9 1.2 1.5<br>VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current<br>1 D = 0.9<br>D = 0.7<br>D = 0.5<br>D = 0.3<br>Sees Sea GTS TNA<br>0.1 D = 0.1<br>D = 0.05<br>D = 0.02<br>0.01<br>D = 0.01<br>D = 0.005 RθJA(t) = r(t) * RθJA<br>R θJA = 94°C/W<br>D = Single Pulse Duty Cycle, D = t1/ t2<br>0.001<br>ctu LUTIII EUV EEE ll<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (sec)<br>Figure 10 Transient Thermal Resistance<br>P-Channel Q1<br>30<br>VGS = -10V<br>VDS = -5.0V<br>VGS = -3.5V<br>25 V GS = -5.0 V<br>VGS = -4.5V<br>20 Kk V GS = -4.0V nee<br>[PX VGS = -3.0V ee<br>15<br>fe | | SR<br>10<br>| (aaapa VGS = -2.5V oe reSRREOD TA = 125°C GRE<br>TA = 85°C<br>5 TA = 150°C TA = 25°C<br>VGS = -2.0V TA = -55°C<br>0<br>0 1 2 3 4 5<br>-VDS, DRAIN -SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>, SOURCE CURRENT (A)<br>IS<br>r(t), TRANSIENT THERMAL RESISTANCE<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br>
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DMC4029SSD Document number: DS36350 Rev. 3 - 2
March 2014 © Diodes Incorporated
**www.diodes.com**
**DMC4029SSD** [
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0.2 0.1<br>0.18 ft VGS = -2.5V 0.09 a VGS = -4.5V<br>0.16<br>0.08 T A = 150°C<br>0.14 se eet<br>a 0.07 TE<br>0.12 fo a TA = 125°C<br>0.1 a a 0.06 ae eee<br>TA = 85°C<br>0.08 7 | ff 0.05 Se ee<br>0.06<br>ee VGS = -4.5V 0.04 Tf TA = 25°C<br>0.04<br>VGS = -10V 0.03<br>0.02<br>TA = -55°C<br>0 ee 0.02 fe ee<br>0 5 10 15 20 0 5 10 15 20 25 30<br>-ID, DRAIN SOURCE CURRENT (A) -ID, DRAIN SOURCE CURRENT (A)<br>Figure 3 Typical On-Resistance vs. Figure 4 Typical On-Resistance vs.<br>Drain Current and Gate Voltage Drain Current and Temperature<br>2.0 0.08<br>VGS = -10V<br>ID = -10A<br>0.07<br>1.5 TTT Tl, 0.06 et | ttt tt<br>AA ttt VGS | -4.= 5V | Le<br>ID -5= A<br>VGS = -4.5V 0.05<br>ID = -5A<br>1.0 CT) 0.04 Aer<br>=a | beret VGS = -10V |<br>ID -10= A<br>0.03<br>Faculte cadenee<br>0.5 a 0.02 rr | | |ttt<br>0.01<br>0 Ty PPT yy 0 et Pt t tttELL ey<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 5 On-Resistance Variation with Temperature Figure 6 On-Resistance Variation with Temperature<br>2.0 30<br>1.8 PT<br>25<br>1.6 eeeeELE,<br>1.4 I D = -1mA<br>20<br>1.2 SSTL<br>1.0 ID = -250µA 15<br>SSET NX TA= 25°C<br>0.8<br>10<br>TEE<br>0.6<br>TELE eer<br>0.4<br>5<br>PEEL<br>0.20 TEEPE 0<br>-50 -25 0 25 50 75 100 125 150 0 0.3 0.6 0.9 1.2 1.5<br>TA, AMBIENT TEMPERATURE (°C) -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 7 Gate Threshold Variation vs. Ambient Temperature Figure 8 Diode Forward Voltage vs. Current<br>)<br>) Ω<br>Ω , DRAIN-SOURCE ON-RESISTANCE (<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>DS(ON) R<br>R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED) , DRAIN-SOURCE ON-RESISTANCE (<br>DS(on)<br>R<br>, SOURCE CURRENT (A)<br>S<br>, GATE THRESHOLD VOLTAGE (V) -I<br>GS(TH)<br>V<br>**----- End of picture text -----**<br>
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**DMC4029SSD** |
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eee D = 0.7<br>Fy D = 0.5 SEPME EE SR TTT TT<br>0 D = 0.3 0 = 0<br>0 : 1 PUIOILAUNCIMa” NN | ETM LTT<br>D = 0.1 D = 0.9<br>PO Ee FH HH<br>IA al8O_O<br>D = 0.05<br>Ecta TETOO OG OO<br>8<br>0 : 01 ee D = 0.02 a ost 7722 TTL|| EMMITT| |NTH<br>D = 0.01<br>a renee eee ce eee ncn caste ee eee Aa] en nce en nel | |<br>a D = 0.005 eet ee eae ae ee cc<br>ETN ITI R (t) = r(t) *R cn<br>a A ae BJA ITI<br>eT<br>0.001 ccc Single Pulse ETN III IE EERIE LCI INL LTT) EeRew =Se94 El ff<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIMES (sec)<br>Figure 9 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>
## **Package Outline Dimensions**
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
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SO-8<br>Pi oti fi fi<br>Dim Min Max<br>A - 1.75<br>E1 E A1 0.10 0.20<br>Gauge Plane A2 1.30 1.50<br>A1 i L ry Seating Plane A3 0.15 0.25<br>b 0.3 0.5<br>To oo Detail ‘A’ D 4.85 4.95<br>| L_| L_| | ! E 5.90 6.10<br>h 7°~9° E1 3.85 3.95<br>45° e 1.27 Typ<br>Detail ‘A’ h - 0.35<br>A2 A A3 L 0.62 0.82<br>UP θ 0° 8°<br>EE e b , [IS ie)<br>All Dimensions in mm<br>D<br>0.254<br>**----- End of picture text -----**<br>
## **Suggested Pad Layout**
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
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X<br>"Ta HE<br>Dimensions Value (in mm)<br>X 0.60<br>Y 1.55<br>C1 C1 5.4<br>C2 1.27<br>C2<br>Y<br>**----- End of picture text -----**<br>
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DMC4029SSD Document number: DS36350 Rev. 3 - 2
March 2014 © Diodes Incorporated
**DMC4029SSD**
## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
## **LIFE SUPPORT**
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
- A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
**www.diodes.com**
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DMC4029SSD Document number: DS36350 Rev. 3 - 2
March 2014 © Diodes Incorporated
Updated at June 9, 2026
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