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DMC4015SSD-13
Dual MOSFET, Complementary N and P Channel, 40 V, 40 V, 8.6 A, 8.6 A, 0.015 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.7W
- Power Dissipation P Channel: 1.7W
- Drain Source Voltage Vds N Channel: 40V
- Drain Source Voltage Vds P Channel: 40V
- Continuous Drain Current Id N Channel: 8.6A
- Continuous Drain Current Id P Channel: 8.6A
- Drain Source On State Resistance N Channel: 0.015ohm
- Drain Source On State Resistance P Channel: 0.029ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.354 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
**DMC4015SSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET** ## **Product Summary** |**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**| |---|---|---|---| ||||| |Device|V(BR)DSS|RDS(ON)|ID<br>TA= +25°C| |Q1|40V|15mΩ @ VGS= 10V|12.2A| |||20mΩ @ VGS= 4.5V|10.6A| |Q2|-40V|29mΩ @ VGS= -10V|-8.8A| |||45mΩ @ VGS= -4.5V|-7.1A| ## **Features and Benefits** - Low Input Capacitance - Low On-Resistance - Fast Switching Speed - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** - **Halogen and Antimony Free. “Green” Device (Note 3)** ## **Description** ## **Mechanical Data** - Case: SO-8 This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 **==> picture [486 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> Terminal Connections: See Diagram<br>lications Terminals: Finish—Matte Tin Annealed over Copper Leadframe<br>OO Solderable per MIL-STD-202, Method 208 _ e3<br>DC-DC Converters Weight: 0.074 grams (Approximate)<br>Power Management Functions<br>Backlighting<br>SO-8 D1 D2<br>S1 ; 7 D1<br>Pin1 G1 D1<br>S2 D2 G1 G2<br>G2 D2<br>“Ss Ei 5]<br>S1 S2<br>Top View<br>Top View Pin Configuration Q N-Channel MOSFET Q2 P-Channel MOSFET<br>**----- End of picture text -----**<br> **Applications** ~~OO~~ DC-DC Converters - Power Management Functions - Backlighting ## **Ordering Information** (Note 4) |**Ordering Informationg Information Information** (Note 4)||| |---|---|---| |**Part Number**|**Case**|**Packaging**| |DMC4015SSD-13|SO-8|2500/Tape &Reel| Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, see http://www.diodes.com/products/packages.html. ## **Marking Information** **==> picture [90 x 89] intentionally omitted <==** **----- Start of picture text -----**<br> 8 5<br>OO<br>C4015SD<br>YY WW<br>1 4<br>O LT LI Ld<br>**----- End of picture text -----**<br> 7 = Manufacturer’s Marking C4015SD = Product Type Marking Code YYWYY or YY = Year (ex: 18 = 2018) W ~~:~~ = Date Code Marking WW = Week (01 - 53) 1 of 9 **www.diodes.com** DMC4015SSD Document number: DS37348 Rev. 4 - 2 June 2018 © Diodes Incorporated **DMC4015SSD** **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---| |**Characteristic**<br>**Symbol**<br>**Value_Q1**<br>**Value_Q2**<br>**Units**<br>Drain-Source Voltage<br>VDSS<br>40<br>-40<br>V<br>Gate-Source Voltage<br>VGSS<br>±20<br>±20<br>V<br>Continuous Drain Current (Note 6) VGS= 10V<br>Steady<br>State<br>TA= +25°C<br>TA= +70°C<br>ID<br>8.6<br>6.8<br>-6.2<br>-4.9<br>A<br>t<10s<br>TA= +25°C<br>TA= +70°C<br>ID<br>12.2<br>9.8<br>-8.8<br>-7.1<br>A<br>Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)<br>IDM<br>80<br>-50<br>A<br>Maximum Body Diode Forward Current (Note 6)<br>IS<br>2.5<br>-2.2<br>A<br>Pulsed Source Current (10µs Pulse, Duty Cycle = 1%)<br>ISM<br>80<br>-50<br>A<br>Avalanche Current (Note 7) L = 0.1mH<br>IAS<br>27<br>-25<br>A<br>Avalanche Energy (Note 7) L = 0.1mH<br>EAS<br>37<br>32<br>mJ<br>**Thermal Characteristics **(@TA= +25°C, unless otherwise specified.)<br>**Characteristic**<br>**Symbol**<br>**Value**<br>**Units**<br>Total Power Dissipation (Note 5)<br>TA= +25°C<br>PD<br>1.2<br>W<br>TA= +70°C<br>0.9<br>~~I~~<br>~~——~~<br>~~ee~~<br>~~rr~~<br>~~a~~<br>~~——~~<br>~~re ee~~<br>~~QQ~~<br>~~a~~<br>~~eG~~|| ||Thermal Resistance, Junction to Ambient (Note 5)<br>SteadyState<br>RϴJA<br>106<br>°C/W<br>t<10s<br>45| ||Total Power Dissipation (Note 6)<br>TA= +25°C<br>PD<br>1.7<br>W<br>TA= +70°C<br>1.1| ||Thermal Resistance, Junction to Ambient (Note 6)<br>SteadyState<br>RϴJA<br>76<br>°C/W<br>t<10s<br>37| ||Thermal Resistance, Junction to Case (Note 6)<br>RϴJC<br>12| ||Operating and Storage Temperature Range<br>TJ, TSTG<br>-55 to +150<br>°C| ## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) **Electrical Characteristics N-Channel Q1** (@TA = +25°C, unless otherwise specified.) |**Electrical Characteristics N-Channel** **Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-Channel** **Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-Channel** **Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-Channel** **Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-Channel** **Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-Channel** **Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-Channel** **Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---|---| |~~GO~~||||||| |**Characteristic**<br>~~GO~~|**Symbol**<br>~~GO~~|**Min**<br>~~GO~~|**Typ**<br>~~GO~~<br>~~GO~~|**Max**<br>~~GO~~<br>~~GO~~|**Unit**<br>~~GO~~|**Test Condition**<br>~~GO~~| |**OFF CHARACTERISTICS(Note 8)**<br>~~GO~~<br>~~QO~~<br>~~GO~~||||||| |Drain-Source Breakdown Voltage<br>~~GO~~|BVDSS<br>~~GO~~|40<br>~~GO~~|<br>~~GO~~<br>~~I~~|<br>~~GO~~<br>~~QO~~<br>~~AO~~|V<br>~~GO~~<br>~~GO~~<br>~~O~~|VGS= 0V, ID= 250µA<br>~~GO~~<br>~~GO~~<br>~~(O~~| |Zero Gate Voltage Drain Current<br>~~DG~~|IDSS<br>~~DG~~|<br>~~DG~~|<br>~~DG~~<br>~~I~~<br>~~DO~~|1<br>~~QO~~<br>~~DG~~<br>~~AO~~<br>~~GO~~|µA<br>~~GO~~<br>~~DG~~<br>~~O~~<br>~~GO~~|VDS= 40V, VGS= 0V<br>~~GO~~<br>~~DG~~<br>~~(O~~<br>~~GO~~| |Gate-Source Leakage<br>~~I~~|IGSS<br>~~I~~|<br>~~I~~|<br>~~I ~~<br>~~I~~<br>~~DO~~|100<br> ~~A O~~<br>~~I~~<br>~~GO~~|nA<br>~~O ~~<br>~~I~~<br>~~GO~~|VGS= ±20V, VDS= 0V<br> ~~(O~~<br>~~I~~<br>~~GO~~| |**ON CHARACTERISTICS(Note 8)**<br>~~DO~~<br>~~GO~~<br>~~GO~~<br>~~QOGO~~<br>~~Se~~||||||| |Gate Threshold Voltage<br>~~GO~~<br>~~Se~~|VGS(th)<br>~~GO~~|1<br>~~GO~~|<br>~~GO~~|3<br>~~GO~~<br>~~QO~~|V<br>~~GO~~<br>~~GO~~|VDS= VGS, ID= 250µA<br>~~GO~~<br>~~GO~~| |Static Drain-Source On-Resistance<br>~~Se~~|RDS(ON)|||15<br>~~QO~~|mΩ<br>~~GO~~|VGS= 10V, ID= 3A<br>~~GO~~| |||||20<br>~~QO~~||VGS= 4.5V, ID= 3A<br>~~GO~~| |Diode Forward Voltage<br>~~Se~~<br>~~CO~~|VSD<br>~~CO~~|<br>~~CO~~|0.7<br>~~CO~~|1.0<br>~~QO ~~<br>~~CO~~|V<br> ~~GO~~<br>~~CO~~|VGS= 0V, IS= 1A<br>~~GO~~<br>~~CO~~| |**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~ee~~||||||| |Input Capacitance<br>~~ee~~|Ciss<br>~~ee~~|<br>~~ee~~|1810<br>~~ee~~|<br>~~ee~~<br>~~ee~~|pF<br>~~ee~~<br>~~ee~~|VDS= 20V, VGS= 0V,<br>f = 1.0MHz<br>~~ee~~| |Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|<br>~~ee~~|135<br>~~ee~~|<br>~~ee~~<br>~~ee~~||| |Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|<br>~~ee~~|112<br>~~ee~~|<br>~~ee~~<br>~~ee~~||| |Gate Resistance<br>~~————~~|RG<br>~~————~~||1.7|<br>~~ee~~|Ω<br>~~ee~~<br>~~e~~|VDS= 0V, VGS= 0V, f = 1.0MHz<br>~~ee~~| |Total Gate Charge (VGS= 4.5V)<br>~~————~~|Qg<br>~~————~~||19||nC<br>~~e~~|VDS= 20V, ID= 3A<br>~~ee~~| |Total Gate Charge (VGS= 10V)<br>~~————~~|Qg<br>~~————~~||40|||| |Gate-Source Charge<br>~~————~~|Qgs<br>~~————~~||5.5|||| |Gate-Drain Charge<br>~~————~~|Qgd<br>~~————~~|<br>~~ee~~|6.3<br>~~ee~~|||| |Turn-On Delay Time<br>~~————~~<br>~~es~~|tD(on)<br>~~————~~<br>~~es~~|<br>~~es~~<br>~~ee~~|5.1<br>~~es~~<br>~~ee~~|<br>~~es~~|nS<br>~~e~~<br>~~es~~<br>~~ee~~|VDD= 20V, ID= 3A<br>VGS= 10V, RG= 3Ω,<br>~~ee~~<br>~~es~~<br>~~ee~~| |Turn-On Rise Time<br>~~es~~|tr<br>~~es~~|<br>~~es~~<br>~~ee~~|5.7<br>~~es~~<br>~~ee~~|<br>~~es~~||| |Turn-Off DelayTime<br>~~es~~|tD(off)<br>~~es~~|<br>~~es~~<br>~~ee~~|23<br>~~es~~<br>~~ee~~|<br>~~es~~||| |Turn-Off Fall Time<br>~~es~~<br>~~ee~~|tf<br>~~es~~<br>~~ee~~|<br>~~es~~<br>~~ee~~<br>~~ee~~|6.3<br>~~es~~<br>~~ee~~<br>~~ee~~|<br>~~es~~<br>~~ee~~||| |BodyDiode Reverse RecoveryTime<br>~~ee~~|trr<br>~~ee~~|<br>~~ee~~<br>~~ee~~|12.2<br>~~ee~~<br>~~ee~~<br>~~GO~~|<br>~~ee~~<br>~~GO~~|nS<br>~~ee~~<br>~~GD~~|IS= 3A, dI/dt = 100A/μs<br>~~ee~~<br>~~(OO~~| |BodyDiode Reverse RecoveryCharge<br>~~sD~~|Qrr<br>~~sD~~|<br>~~sD~~|5.4<br>~~sD~~<br>~~GO~~|<br>~~sD~~<br>~~GO~~|nC<br>~~sD~~<br>~~GD~~|IS= 3A, dI/dt = 100A/μs<br>~~sD~~<br>~~(OO~~| 2 of 9 **www.diodes.com** DMC4015SSD Document number: DS37348 Rev. 4 - 2 June 2018 © Diodes Incorporated **DMC4015SSD** **==> picture [480 x 647] intentionally omitted <==** **----- Start of picture text -----**<br> 30 30<br>VGS = 10V<br>VGS = 4.5V<br>25 | = 25 VDS = 5.0V yp<br>VGS = 4.0V<br>20 V GS = 3.5V 20<br>15 Po VGS = 3.0V 15 pe T A = 150°C<br>10 | 10 Sea) TA = 125°C ae<br>TA = 85°C<br>5 (aeaee en eey 5 ae TA = 25°C<br>VGS = 2.5V<br>0 0 TA = -55°C<br>0 oe 0.5 1 1.5 2 2.5 3 1 1.5 2 2.5 ae 3 3.5 4<br>V DS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>0.02 0.05<br>0.0180.016 PF-t-+++}—| [| t f f 0.04 ALLEL ID = 3.0A<br>VGS = 4.5V<br>0.014<br>0.012 0.03<br>0.01 aoe V GS = 10V<br>0.008<br>0.02<br>0.006 Se CT<br>0.004<br>0.01<br>0.002 Soe NEEL<br>0<br>0 ee 5 10 15 20 25 30 0 ELLEELELE<br>Figure 3 Typical On-Resistance vs. I D, DRAIN-SOURCE CURRENT 0 2 V GS4 , GATE-SOURCE VOLTAGE (V)6 8 10 12 14 16 18 20<br>Drain Current and Gate Voltage Figure 4 Typical Transfer Characteristic<br>0.02 2<br>VGS = 10V<br>1.8 Pf | | | ft ft<br>VGS = 10V<br>0.015 T A = 150°C 1.6 I D = 3A<br>TA = 125°C 1.4 FEE<br>VGS = 4.5V<br>TA = 85°C 1.2 ID = 3A<br>0.01 1 Soe<br>TA = 25°C 0.8 | pet<br>0.005 TA = -55°C 0.6 TT | | tt<br>0.4 Pt | | df df tf<br>0.2 Pf | | tt yf<br>0<br>0 5 10 15 20 25 30 0 P| |tttfft ft| ft teft<br>ID, DRAIN CURRENT (A) -50 -25 0 25 50 75 100 125 150<br>Figure 5 Typical On-Resistance vs. T , JUNCTION TEMPERATURE (J C)<br>Drain Current and Temperature Figure 6 On-Resistance Variation with Temperature<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>D<br>, DRAIN CURRENT (A)<br>I<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> 3 of 9 **www.diodes.com** DMC4015SSD Document number: DS37348 Rev. 4 - 2 June 2018 © Diodes Incorporated **DMC4015SSD** **==> picture [479 x 656] intentionally omitted <==** **----- Start of picture text -----**<br> 0.05 2.3<br>0.045<br>0.04 CeeTE V GS = 4.5V 2 TT—— TTT)<br>ID = 3A ID = 1mA<br>0.035<br>0.03 1.7 I D = 250µA<br>eee ST<br>0.025 VGS = 10V<br>ID = 3A<br>0.02 case 1.4 |=—SCULLL NAL<br>0.015 eStore ><br>0.01 1.1<br>0.005<br>0 0.8<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>receeere} TJ, JUNCTION TEMPERATURE (C) = LEE TJ, JUNCTION TEMPERATURE (°C)<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Ambient Temperature<br>30 10000<br>f = 1MHz<br>25<br>eee =s=====— C iss<br>20 1000<br>ee | CCE<br>TA = 150°C 150°C<br>15 T A = 125°C<br>C oss<br>10 T A = 85°C 100 Crss<br>]} SS<br>5 feo TA = 25°C<br>0 DS TA = -55°C 10 EEE<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30 35 40<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS , DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>10<br>8 VDS = 20V<br>ID = 3.0A<br>6 ee<br>4 EanTAT<br>4aee<br>2 ert<br>| tt<br>0 AGREEae<br>0 5 10 15 20 25 30 35 40<br>Qg, TOTAL GATE CHARGE (nC)<br>Figure 11 Gate-Charge Characteristics<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>GS(TH)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(on)<br>R<br>T<br>, JUNCTION CAPACITANCE (pF)<br>C<br>, SOURCE CURRENT (A)<br>IS<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br> 4 of 9 **www.diodes.com** DMC4015SSD Document number: DS37348 Rev. 4 - 2 June 2018 © Diodes Incorporated **DMC4015SSD** **Electrical Characteristics P-Channel Q2** (@TA = +25°C, unless otherwise specified.) **==> picture [522 x 303] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||||| |---|---|---|---|---|---|---|---|---|---|---| |Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition| |OFF CHARACTERISTICS (Note 8)| |Drain-Source Breakdown Voltage|BVDSS|-40|||V|VGS = 0V, ID = -250µA| |ee|Zero Gate Voltage Drain Current|IDSS|||-1|µA|VDS = -40V, VGS = 0V| |Gate-Source Leakage|IGSS|||100|nA|VGS = ±20V, VDS = 0V| |a|(I|(OR|OU| |ON CHARACTERISTICS (Note 8)| |GO|Gate Threshold Voltage|VGS(th)|-1||(OO|-3|GO|V|VDS = VGS, ID = -250µA| |||29|VGS = -10V, ID = -3A| |Static Drain-Source On-Resistance|RDS(ON)|||45|mΩ|VGS = -4.5V, ID = -3A| |Cf|Diode Forward Voltage|VSD|ef||-0.7|-1.2|V|VGS = 0V, IS = -1A| |DYNAMIC CHARACTERISTICS (Note 9)| |es|Input Capacitance Output Capacitance|Gs|CCossiss||1626 135||pF|VDS = -20V, VGS = 0V,| |f = 1.0MHz| |Reverse Transfer Capacitance|Crss||107|| |———|Gate Resistance|R|ee|G||ee|11||Ω|VDS = 0V, VGS = 0V, f = 1.0MHz| |ee|Total Gate Charge (VGS = -4.5V)|Qg||17|| |Total Gate Charge (VGS = -10V)|Qg||34||nC|VDS = -20V, ID = -3A| |Gate-Source Charge|Qgs||3.7|| |Gate-Drain Charge|Qgd||6.0|| |——————|Turn-On Delay Time|tD(on)||3.9||ee| |Turn-On Rise Time|tr||2.8||VDD = -20V, RL = 1.6Ω| |nS| |Turn-Off Delay Time|tD(off)||83||VGS = -10V, RG = 3Ω, ID = -3A| |ae|Turn-Off Fall Time|tf|ee||30||ee| |—————————————|Body Diode Reverse Recovery Time|trr||17.3||nS|IS = -3A, dI/dt = 100A/μs| |Ce|Body Diode Reverse Recovery Charge|Qrr|ld||7.2|ld||ld|nC|IS = -3A, dI/dt = 100A/μs| **----- End of picture text -----**<br> - Notes: 5. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PCB, 2oz copper, with 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 5 of 9 **www.diodes.com** DMC4015SSD Document number: DS37348 Rev. 4 - 2 June 2018 © Diodes Incorporated **DMC4015SSD** **==> picture [492 x 655] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>VGS = -3.5V 30<br>/[/ | |<br>25 VGS = -3.0V VDS = -5.0V<br>25<br>20 IN V GS = -4.0V TTT AT<br>20<br>VGS = -4.5V<br>be Cee<br>15 VGS = -5.0V<br>15<br>VGS = -10V VGS = -2.5V<br>10 SUT TA = 150°C<br>10 TA = 125°C<br>5 TA = 85°C<br>}—- — — fr<br>5 TA = 25°C<br>VGS = -2.0V<br>0 TA = -55°C<br>0 AREREREEESpitt} 0.5 1 1.5 2 ij} 2.5 3 3.5 4 4.5 5 00 FF 0.5 1 1.5 fF 2 2.5 3 3.5 4 4.5 5<br>V DS, DRAIN-SOURCE VOLTAGE (V) V GS, GATE-SOURCE VOLTAGE (V)<br>Figure 12 Typical Output Characteristics Figure 13 Typical Transfer Characteristics<br>0.04 0.1<br>0.09<br>0.035<br>oo 0.08 ID = -3.0A<br>VGS = -4.5V<br>0.03 0.07<br>0.06<br>0.025 eo<br>0.05<br>ff jf CPC<br>VGS = -10V<br>0.04<br>0.02 > _—*Y STEELE<br>0.03<br>0.015 CEE 0.02 CARRERE<br>0.01<br>0.01 rT TT Ty -EEEEEL E TE<br>0 5 10 15 20 25 30 0 CECE CCE<br>ID, DRAIN-SOURCE CURRENT 0 2 4 6 8 10 12 14 16 18 20<br>Figure 14 Typical On-Resistance vs. VGS, GATE-SOURCE VOLTAGE (V)<br>Drain Current and Gate Voltage Figure 15 Typical Transfer Characteristic<br>0.050 2<br>VGS = -4.5V<br>1.8<br>0.040 TTT LT T A = 150°C 1.6 CTCL VGS = -10V<br>TA = 125°C ID = -3A<br>1.4<br>0.030 SSS T A = 85°C 1.2 VGS = -4.5V<br>ID = -3A<br>SE TA = 25°C 1 Hee<br>0.020 rT a<br>0.8<br>SERRES TA = -55°C 0.6 beer<br>0.010<br>ee 0.4 HCCC EEE<br>0.2<br>0.000 Pe] fy yy rr<br>0 5 10 15 20 25 30 0 CEE EE<br>Figure 16 Typical On-Resistance vs. I D, DRAIN CURRENT (A) -50 -25TJ, JUNCTION TEMPERATURE (0 25 50 75 100 C)125 150<br>Drain Current and Temperature Figure 17 On-Resistance Variation with Temperature<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>, DRAIN CURRENT (A)<br>D<br>I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>URRENT (A)<br>C<br>, DRAIN<br>ID<br>**----- End of picture text -----**<br> 6 of 9 **www.diodes.com** DMC4015SSD Document number: DS37348 Rev. 4 - 2 June 2018 © Diodes Incorporated **DMC4015SSD** **==> picture [479 x 648] intentionally omitted <==** **----- Start of picture text -----**<br> 0.05 1.8<br>0.045<br>0.04 -f tft V GS = -4.5V 1.6 SURE<br>0.035 ID = -3A ID = -1mA<br>Soe ae 1.4 SRT<br>0.03 ID = -250µA<br>0.025 Here V GS = -10V 1.2 eae<br>ID = -3A<br>0.02 ear NS<br>1<br>0.015 —sett o+ey SC L LL LEE NYNOX<br>0.01 0.8<br>0.005 PEERY ELS<br>0 CEE EEC 0.6 ELLE EL<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 18 On-Resistance Variation with Temperature Figure 19 Gate Threshold Variation vs. Ambient Temperature<br>30 10000<br>f = 1MHz<br>25<br>Ciss<br>20 1000<br>TA = 150°C 150°C __<br>15 T A = 125°C<br>C oss<br>10 TA = 85 ° C 100<br>Crss<br>TA = 25°C<br>5 He SS<br>Ir eeeeeeee<br>TA = -55°C<br>0 WS 10 “CECE<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30 35 40<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 20 Diode Forward Voltage vs. Current Figure 21 Typical Junction Capacitance<br>10<br>8 VDS = -20V<br>ID = -3A<br>6<br>fs<br>4 PLA<br>2 LYALL<br>0 Ae<br>0 5 10 15 20 25 30 35<br>Qg, TOTAL GATE CHARGE (nC)<br>Figure 22 Gate-Charge Characteristics<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(on)<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>S<br>, SOURCE CURRENT (A)<br>I<br>GS<br>, GATE-SOURCE VOLTAGE (V)<br>V<br>**----- End of picture text -----**<br> 7 of 9 **www.diodes.com** DMC4015SSD Document number: DS37348 Rev. 4 - 2 June 2018 © Diodes Incorporated **DMC4015SSD** ## **Package Outline Dimensions** Please see http://www.diodes.com/package-outlines.html for the latest version **==> picture [488 x 241] intentionally omitted <==** **----- Start of picture text -----**<br> SO-8<br>SO-8<br>E a Dim Min Max Typ<br>A 1.40 1.50 1.45<br>A1 0.10 0.20 0.15<br>1<br>b 0.30 0.50 0.40<br>c 0.15 0.25 0.20<br>D 4.85 4.95 4.90<br>E 5.90 6.10 6.00<br>b<br>E1 E1 3.80 3.90 3.85<br>h E0 3.85 3.95 3.90<br>Q e — — 1.27<br>7° h — — 0.35<br>c L 0.62 0.82 0.72<br>A 4°±3° Q 0.60 0.70 0.65<br>All Dimensions in mm<br>G auge Plane<br>S eating Plane<br>L<br>e A1 Jes E0<br>D<br>9° (All sides)<br>R 0.1<br>45°<br>**----- End of picture text -----**<br> ## **Suggested Pad Layout** **==> picture [447 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> Please see http://www.diodes.com/package-outlines.html for the latest version.<br>SO-8<br>X1<br>Dimensions Value (in mm)<br>C 1.27<br>Y1 X 0.802<br>X1 4.612<br>Y 1.505<br>OE Y1 6.50<br>Y<br>later C X<br>**----- End of picture text -----**<br> 8 of 9 **www.diodes.com** DMC4015SSD Document number: DS37348 Rev. 4 - 2 June 2018 © Diodes Incorporated **DMC4015SSD** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. ## **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2018, Diodes Incorporated **www.diodes.com** 9 of 9 **www.diodes.com** DMC4015SSD Document number: DS37348 Rev. 4 - 2 June 2018 © Diodes Incorporated
Updated at June 9, 2026
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