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DMC3730UFL3-7
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 1.1 A, 1.1 A, 0.46 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: X2-DFN1310
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 390mW
- Power Dissipation P Channel: 390mW
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 1.1A
- Continuous Drain Current Id P Channel: 1.1A
- Drain Source On State Resistance N Channel: 0.46ohm
- Drain Source On State Resistance P Channel: 1ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.087 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
**DMC3730UFL3**
## **COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET**
## **Product Summary**
|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|---|
|||||
|**Device**|**V(BR)DSS**|**RDS(ON) Max**|**ID Max**<br>**TA = +25°C**|
|Q1<br>N-Channel|30V|460mΩ @ VGS= 4.5V|1.1A|
|||560mΩ @ VGS= 2.5V|0.9A|
|Q2<br>P-Channel|-30V|1000mΩ @ VGS= -4.5V|-0.7A|
|||1500mΩ @ VGS= -2.5V|-0.5A|
## **Features and Benefits**
- Footprint of just 1.3 mm[2]
- Ultra Low Profile Package – 0.35mm Profile
- Low Gate Threshold Voltage
- Fast Switching Speed
- Ultra-Small Surface Mount Package
- **ESD Protected Gate**
- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)**
- **Halogen and Antimony Free. “Green” Device (Note 3)**
- **Qualified to AEC-Q101 Standards for High Reliability**
## **Description and Applications**
This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
## **Mechanical Data**
- Case: X2-DFN1310-6 (Type B)
- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Motor Control
- Power Management Functions
- Backlighting
- Terminals: Finish – NiPdAu Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e4**
- Weight: 0.002 grams (Approximate)
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X2-DFN1310-6 (Type B)<br>**----- End of picture text -----**<br>
**==> picture [518 x 132] intentionally omitted <==**
**----- Start of picture text -----**<br>
D1 G2 S2 D1 D2<br>G1 G2<br>ESD PROTECTED S1 G1 D2 & Gate Protection Diode S1 & Gate Protection Diode S2<br>Bottom View Top View Q1 N-Channel Q2 P-Channel<br>Pin-Out Equivalent Circuit<br>**----- End of picture text -----**<br>
## **Ordering Information** (Note 4)
|**Ordering Informationg Information Information**(Note 4)|(Note 4)|||
|---|---|---|---|
|**Part Number**|**Reel Size (inches)**|**Tape Width (mm)**|**Quantity per Reel**|
|DMC3730UFL3-7|7|8|3,000|
- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
## **Marking Information**
**730** __
730 = Product Type Marking Code
1 of 10 **www.diodes.com**
DMC3730UFL3 Datasheet number: DS38571 Rev. 3 - 2
April 2016 © Diodes Incorporated
**DMC3730UFL3**
## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.)
|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|||**Symbol**|**Q1 **|**Q2 **|**Unit**|
|Drain-Source Voltage|||VDSS|30|-30|V|
|Gate-Source Voltage|||VGSS|±8|±8|V|
|Continuous Drain Current (Note 5) VGS= 4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|1.1<br>0.8|-0.7<br>-0.6|A|
## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)
|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|TA= +25°C|PD|0.39|W|
|Thermal Resistance,Junction to Ambient(Note 5)|SteadyState|RθJA|330|°C/W|
|Total Power Dissipation(Note 6)|TA= +25°C|PD|0.81|W|
|Thermal Resistance,Junction to Ambient(Note 6)|SteadyState|RθJA|156|°C/W|
|Thermal Resistance,Junction to Case(Note 6)||RθJC|51||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|
**Electrical Characteristics** (N-Channel Q1) (@TA = +25°C, unless otherwise specified.)
|**Electrical Characteristics**(N-Channel Q1) (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(N-Channel Q1) (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(N-Channel Q1) (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(N-Channel Q1) (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(N-Channel Q1) (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(N-Channel Q1) (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(N-Channel Q1) (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~—————————————~~|**Symbol**<br>~~—————————————~~|**Min**<br>~~—————————————~~|**Typ**<br>~~—————————————~~|**Max**<br>~~—————————————~~|**Unit**<br>~~—————————————~~|**Test Condition**<br>~~—————————————~~|
|**OFF CHARACTERISTICS**(Note 7)<br>~~—————————————~~|||||||
|Drain-Source Breakdown Voltage<br>~~—————————————~~|BVDSS<br>~~—————————————~~|30<br>~~—————————————~~|—<br>~~—————————————~~|—<br>~~—————————————~~|V<br>~~—————————————~~|VGS= 0V,ID= 250μA<br>~~—————————————~~|
|Zero Gate Voltage Drain Current TJ= +25°C<br>~~——————————~~|IDSS<br>~~——————————~~|—<br>~~——————————~~|—<br>~~——————————~~|1<br>~~——————————~~|µA<br>~~——————————~~|VDS= 30V,VGS= 0V<br>~~——————————~~|
|Gate-Source Leakage<br>~~——————————~~|IGSS<br>~~——————————~~|—<br>~~——————————~~|—<br>~~——————————~~|±10<br>~~——————————~~|µA<br>~~——————————~~|VGS= ±8V,VDS= 0V<br>~~——————————~~|
|**ON CHARACTERISTICS**(Note 7)|||||||
|Gate Threshold Voltage|VGS(TH)|0.45|0.72|0.95|V|VDS= VGS,ID= 250μA|
|Static Drain-Source On-Resistance<br>~~pf~~|RDS(ON)<br>~~pf~~|—<br>~~pf~~|291<br>~~pf~~|460<br>~~pf~~|mΩ<br>~~pf~~|VGS= 4.5V,ID= 200mA<br>~~pf~~|
||||335<br>~~pf~~|560<br>~~pf~~||VGS= 2.5V,ID= 100mA<br>~~pf~~|
||||398<br>~~pf~~|730<br>~~pf~~||VGS= 1.8V,ID= 75mA<br>~~pf~~|
|Diode Forward Voltage<br>~~pf~~<br>~~ay~~|VSD<br>~~pf~~<br>~~aya~~|—<br>~~pf~~<br>~~aay~~|0.7<br>~~pf~~<br>~~ayae~~|1.2<br>~~pf~~<br>~~aeae~~|V<br>~~pf~~<br>~~ae~~<br>~~ae~~|VGS= 0V,IS= 300mA<br>~~pf~~<br>~~ae~~|
|**DYNAMIC CHARACTERISTICS**(Note 8)<br>~~ayaayaeae~~<br>~~ae~~|||||||
|Input Capacitance<br>~~ay~~|CISS<br>~~aya~~|—<br>~~aay~~|65.9<br>~~ayae~~|—<br>~~aeae~~|pF<br>~~ae~~<br>~~ae~~|VDS= 25V, VGS= 0V,<br>f = 1.0MHz<br>~~ae~~|
|Output Capacitance<br>~~ay~~|COSS<br>~~ay a~~|—<br>~~a ay~~|5.8<br>~~ay ae~~|—<br>~~ae ae~~|pF<br>~~ae~~<br>~~ae~~||
|Reverse Transfer Capacitance|CRSS|—|4.3|—|pF||
|Gate Resistance|RG|—|64|—|Ω|VDS= 0V,VGS= 0V,f = 1MHz|
|Total Gate Charge<br>~~a~~|QG<br>~~a~~|—|0.9|—|nC|VDS= 15V, VGS= 4.5V, ID= 1A|
|Gate-Source Charge|QGS|—|0.1|—|nC||
|Gate-Drain Charge|QGD|—|0.1|—|nC||
|Turn-On DelayTime<br>~~eee~~|tD(ON)<br>~~eee~~|—<br>~~eee~~|3.6<br>~~eee~~|—<br>~~eee~~|ns<br>~~eee~~|VGS= 4.5V, VDS= 10V,<br>RG= 6Ω, ID= 1A<br>~~eee~~|
|Turn-On Rise Time<br>~~eee~~|tR<br>~~eee~~|—<br>~~eee~~|6.4<br>~~eee~~|—<br>~~eee~~|ns<br>~~eee~~||
|Turn-Off DelayTime<br>~~eee~~|tD(OFF)<br>~~eee~~|—<br>~~eee~~|19.4<br>~~eee~~|—<br>~~eee~~|ns<br>~~eee~~||
|Turn-Off Fall Time<br>~~eee~~|tF<br>~~eee~~|—<br>~~eee~~|6.9<br>~~eee~~|—<br>~~eee~~|ns<br>~~eee~~||
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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DMC3730UFL3 Datasheet number: DS38571 Rev. 3 - 2
April 2016 © Diodes Incorporated
**DMC3730UFL3**
## **Electrical Characteristics** (P-Channel Q2) (@TA = +25°C, unless otherwise specified.)
|**Electrical Characteristics**(P-Channel Q2)|(P-Channel Q2) (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS**(Note 7)|||||||
|Drain-Source Breakdown Voltage|BVDSS|-30|—|—|V|VGS= 0V,ID= -250μA|
|Zero Gate Voltage Drain Current TJ= +25°C|IDSS|—|—|-1|µA|VDS= -30V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±10|µA|VGS= ±8V,VDS= 0V|
|**ON CHARACTERISTICS**(Note 7)<br>~~OD~~<br>~~OO~~|||||||
|Gate Threshold Voltage<br>~~DO~~|VGS(TH)<br>~~DO~~|-0.5<br>~~DO~~|-0.78<br>~~DO~~<br>~~OD~~|-1.1<br>~~DO~~<br>~~OD~~|V<br>~~DO~~<br>~~OO~~|VDS= VGS,ID= -250μA<br>~~DO~~<br>~~OO~~|
|Static Drain-Source On-Resistance<br>~~i~~|RDS(ON)<br>~~i~~|—<br>~~i~~|644<br>~~OD~~<br>~~i~~|1,000<br>~~OD~~<br>~~i~~|mΩ<br>~~OO~~<br>~~i~~|VGS= -4.5V,ID= -400mA<br>~~OO~~<br>~~i~~|
||||769<br>~~i~~|1,500<br>~~i~~||VGS= -2.5V,ID= -200mA<br>~~i~~|
||||949<br>~~i~~|2,000<br>~~i~~||VGS= -1.8V,ID= -100mA<br>~~i~~|
|Diode Forward Voltage|VSD|—|-0.8|-1.2|V|VGS= 0V,IS= -300mA|
|**DYNAMIC CHARACTERISTICS**(Note 8)|||||||
|Input Capacitance<br>~~|~~<br>~~———~~|CISS<br>~~|~~<br>~~———~~|—<br>~~|~~<br>~~———~~|83<br>~~|~~<br>~~———~~|—<br>~~|~~<br>~~———~~|pF<br>~~|~~<br>~~———~~|VDS= -30V, VGS= 0V,<br>f = 1.0MHz<br>~~|~~<br>~~———~~|
|Output Capacitance<br>~~———~~|COSS<br>~~———~~|—<br>~~———~~|6.2<br>~~———~~|—<br>~~———~~|pF<br>~~———~~||
|Reverse Transfer Capacitance<br>~~———~~|CRSS<br>~~———~~|—<br>~~———~~|4.1<br>~~———~~|—<br>~~———~~|pF<br>~~———~~||
|Gate Resistance<br>~~———~~|RG<br>~~———~~|—<br>~~———~~|177<br>~~———~~|—<br>~~———~~|Ω<br>~~———~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~———~~|
|Total Gate Charge<br>~~eee~~|QG<br>~~eee~~|—<br>~~eee~~|0.9<br>~~eee~~|—<br>~~eee~~|nC<br>~~eee~~|VDS= -15V, VGS= -4.5V, ID= -1A<br>~~eee~~<br>~~ee~~|
|Gate-Source Charge<br>~~eee~~|QGS<br>~~eee~~|—<br>~~eee~~|0.1<br>~~eee~~|—<br>~~eee~~|nC<br>~~eee~~||
|Gate-Drain Charge<br>~~eee~~|QGD<br>~~eee~~<br>~~a~~|—<br>~~eee~~|0.2<br>~~eee~~|—<br>~~eee~~|nC<br>~~eee~~<br>~~ee~~||
|Turn-On DelayTime<br>~~es~~<br>~~—————~~|tD(ON)<br>~~es~~<br>~~—————~~<br>~~a~~|—<br>~~es~~<br>~~—————~~|6.0<br>~~es~~<br>~~—————~~|—<br>~~es~~<br>~~—————~~|ns<br>~~es~~<br>~~—————~~<br>~~ee~~|VGS= -4.5V, VDS= -10V,<br>RG= 6Ω, ID= -1A<br>~~—————~~<br>~~ee~~|
|Turn-On Rise Time<br>~~—————~~|tR<br>~~—————~~<br>~~a~~|—<br>~~—————~~|11.7<br>~~—————~~|—<br>~~—————~~|ns<br>~~—————~~<br>~~ee~~||
|Turn-Off DelayTime<br>~~—————~~|tD(OFF)<br>~~—————~~<br>~~a~~|—<br>~~—————~~|28.9<br>~~—————~~|—<br>~~—————~~|ns<br>~~—————~~<br>~~ee~~||
|Turn-Off Fall Time<br>~~—————~~|tF<br>~~—————~~<br>~~a~~|—<br>~~—————~~|15.5<br>~~—————~~|—<br>~~—————~~|ns<br>~~—————~~<br>~~ee~~||
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DMC3730UFL3 Datasheet number: DS38571 Rev. 3 - 2
April 2016 © Diodes Incorporated
**DMC3730UFL3**
## **Typical Characteristics** (N-Channel)
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**----- Start of picture text -----**<br>
2.0 2<br>1.8 VGS = 1.8V 1.8 VDS=5V<br>VGS = 2.0V<br>1.6 Ws — 1.6 o/s<br>VGS = 2.5V<br>1.4 We VGS = 3.0V _ 1.4 en aa<br>1.2 a / VGS = 4.5V TS 1.2 a Aeon<br>1.0 . ——— VGS = 1.5V 1 ee A<br>0.8 0.8<br>VGS = 8.0V<br>0.6 f e 0.6<br>TA = 150 [o] C TA = 85 [o] C<br>0.4 0.4<br>TA = 125 [o] C TA = 25 [o] C<br>0.2 0.2<br>VGS = 1.2V TA = -55 [o] C<br>0.0 jGa p 0 Dp<br>0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5<br>VDS, DRAIN-SOURCE VOLTAGE(V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>0.5 2<br>1.8 ID = 200mA<br>0.45 Pt | ft fe pf<br>1.6<br>ID = 100mA<br>1.4<br>0.4 ee Se<br>a 1.2 o ID = 75mA e<br>VGS = 1.8V<br>0.35 1<br>0.8<br>0.3 VGS = 2.5V<br>— —— — 0.6 |<br>VGS = 4.5V 0.4<br>0.25<br>ae 0.2 —<br>0.2 | | | ft 0 ee<br>0 0.2 0.4 0.6 0.8 1 0 2 4 6 8<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs Drain Current Figure 4. Typical Transfer Characteristic<br>and Gate Voltage<br>1.8<br>0.7<br>VGS= 4.5V VGS = 4.5V, ID = 200mA<br>1.6<br>0.6<br>VGS = 2.5V, ID = 100mA<br>TA = 150 [o] C<br>1.4<br>0.5<br>TA = 125 [o] C 1.2<br>0.4<br>e e Pit TALL<br>TA = 85 [o] C<br>1<br>0.3 VGS = 1.8V, ID = 75mA<br>TA =25 [o] C<br>Te tt 0.8 a an<br>0.2<br>rT Ey ti ya<br>TA = -55 [o] C<br>0.6<br>0.1 Titi LL sgn REEEe<br>-50 -25 0 25 50 75 100 125 150<br>0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs Drain Current Figure 6. On-Resistance Variation with Junction<br>Temperature<br>, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω) , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON) DS(ON)<br>R R<br>(Ω)<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>**----- End of picture text -----**<br>
Figure 5. Typical On-Resistance vs Drain Current and Junction Temperature
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DMC3730UFL3 Datasheet number: DS38571 Rev. 3 - 2
April 2016 © Diodes Incorporated
**DMC3730UFL3**
**Typical Characteristics** (N-Channel) (Continued)
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**----- Start of picture text -----**<br>
0.7 1<br>VGS = 1.8V, ID = 75mA<br>0.9<br>0.6<br>a ay PT TTT TTT<br>VGS = 2.5V, ID = 100mA 0.8<br>0.5 oa eg RR<br>A 0.7 SN ID = 1mA<br>0.4<br>bse , 0.6 F R<br>0.3 0.5 ID = 250µA<br>VGS = 4.5V, ID = 200mA<br>0.2 — Sa—— 0.4 SS an ™~<br>0.1 Pf} tL 0.3 PT EET ELE<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ ) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Junction Figure 8. Gate Threshold Variation vs Junction<br>Temperature Temperature<br>2 1000<br>1.8 VGS = 0V f=1MHz<br>1.6 eeteea SS aS<br>1.4 eee || ><br>100 Ciss<br>1.2 ee || | _ |__|4<br>1<br>0.8<br>0.6 IA 10 N e Coss e<br>0.4 TJ = 150 [o] C TJ = 85 [o] C<br>0.2 TJ = 125 [o] C TJ = 25 [o] C Crss<br>TJ = -55 [o] C<br>0 OfLy 1 SSS t=<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>8 10<br>R<br>DS(ON)<br>Limited<br>6 1<br>DC<br>4 0.1 PW =10s<br>PW =1s<br>PW =100ms<br>2 VDS = 15V, ID = 1A 0.01 TJ(Max)=150 ℃ PW =10ms<br>TC=25 ℃ PW =1ms<br>Single Pulse PW =100µs<br>DUT on 1*MRP Board<br>VGS=4.5V<br>0 / 0.001 ttt ooh<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0.1 1 10 100<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>GS(TH)<br>V<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>
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DMC3730UFL3 Datasheet number: DS38571 Rev. 3 - 2
April 2016 © Diodes Incorporated
**DMC3730UFL3**
## **Typical Characteristics** (P-Channel)
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**----- Start of picture text -----**<br>
2.0<br>1.8 VGS = -4.5V<br>1.6 W VGS = -8.0V K VGS = -2.5V<br>1.4 VGS = -3.0V<br>1.2 VGS = -2.0V<br>1.0<br>.) VGS = -1.8V<br>0.8<br>0.6<br>» Zane<br>0.4 VGS = -1.5V<br>0.2 J L VGS = -1.2V<br>0.0<br>0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 13. Typical Output Characteristic<br>1.2<br>VGS = -1.8V<br>1.1<br>1<br>0.9<br>0.8 VGS = -2.5V<br>0.7<br>VGS = -4.5V<br>0.6<br>0.5<br>0 0.2 0.4 0.6 0.8 1<br>ID, DRAIN-SOURCE CURRENT (A)<br>Figure 15. Typical On-Resistance vs Drain Current<br>and Gate Voltage<br>1.4<br>VGS=-4.5V<br>1.2 TA = 150 [o] C<br>TA = 125 [o] C<br>1 CTT wy<br>0.8<br>E SS TA = 85 [o] C EC<br>0.6<br>TA = 25 [o] C<br>sanaeeee ae<br>0.4<br>oo TA = -55 [o] C ee<br>0.2 TAL Lh<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2<br>ID, DRAIN CURRENT (A)<br>Figure 17. Typical On-Resistance vs Drain Current<br>and Junction Temperature<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>(Ω)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
2<br>1.8 VDS=-5V<br>1.6 TA = 85 [o] C<br>Uf<br>1.4 TA = 25 [o] C<br>TA = -55 [o] C<br>1.2 TA = 125 [o] C<br>1<br>TA = 150 [o] C<br>0.8 fe<br>0.6<br>f e<br>0.4<br>0.2 Sf<br>0 |<br>0.5 1 1.5 2 2.5 3<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 14. Typical Transfer Characteristic<br>2<br>1.8 ok ID = -400mA ||<br>1.61.4 po oA ID = -200mA | |<br>1.2 ID = -100mA<br>1 | | |<br>0.8 eeNe<br>0.6 ooo<br>0.4 FT|<br>0 2 4 6 8<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 16. Typical Transfer Characteristic<br>1.8<br>1.6<br>VGS = -4.5V, ID = -400mA<br>1.4 TET VGS = -2.5V, ID = -200mA<br>1.2<br>Ph a r<br>1<br>COE DAT VGS = -1.8V, ID = -100mA<br>0.8<br>a aa<br>A TT<br>0.6<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 18. On-Resistance Variation with Junction<br>Temperature<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
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DMC3730UFL3 Datasheet number: DS38571 Rev. 3 - 2
April 2016 © Diodes Incorporated
**DMC3730UFL3**
## **Typical Characteristics** (P-Channel) (Continued)
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**----- Start of picture text -----**<br>
1.6 1.1<br>1.4 VGS = -1.8V, ID = -100mA 1<br>an ! pti ttt tt<br>1.2 VGS = -2.5V, ID = -200mA 0.9 ID = -1mA<br>1 E 0.8 R<br>V e<br>0.8 0.7 ID = -250µA<br>0.6 «o_o 0.6 OA<br>ce _-ss VGS = -4.5V, ID = -400mA oN<br>0.4 0.5<br>Se ptt ETT<br>0.2 0.4<br>Pi tL ETT PEt ttt] tT<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ ) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 19. On-Resistance Variation with Junction Figure 20. Gate Threshold Variation vs Junction<br>Temperature Temperature<br>2 1000<br>1.8 VGS = 0V GS = 0V = 0V f=1MHz<br>1.61.21.41.2<br>1.41.2 es f e |) |) co 100 ee ee Ciss<br>1<br>0.8 oee — —— —<br>10 Coss<br>0.6 TJ = 150J = 150 = 150 [[o]] C<br>0.40.2 TTJ = 85J = 125TJ = 85J = 125J = 85J = 125 = 85J = 125 [[o]] C [[o]] C |llll TJ = 25J = 25 = 25 [[o]] C == Se SES == Crss ——<br>TJ = -55J = -55 = -55 [[o]] C<br>0 WZi 1 |SStT | |<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30<br>VSD, SOURCE-DRAIN VOLTAGE (V) SD, SOURCE-DRAIN VOLTAGE (V) , SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 21. Diode Forward Voltage vs. Current Figure 22. Typical Junction Capacitance<br>8 10<br>R<br>DS(ON)<br>Limited<br>6 1<br>DC<br>4 0.1<br>PW =10s<br>PW =1s<br>2 VDS = -15V, ID = -1A DS = -15V, ID = -1A = -15V, ID = -1A D = -1A = -1A 0.01 TTJ(Max)C=25=150 ℃ ℃ PW =100ms PW =10ms<br>Single Pulse PW =1ms<br>DUT on 1*MRP Board<br>VGS=-4.5V PW =100µs<br>0 PTE 0.001 “ Baill<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0.1 1 10 100<br>Qg (nC) g (nC) (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 23. Gate Charge Figure 24. SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>GS(TH)<br>V<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>ISS<br>, JUNCTION CAPACITANCE (PF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>
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2<br>VGS = 0V GS = 0V = 0V<br>1.8<br>1.61.21.41.2 es f e |) |) co<br>1<br>0.8 oee<br>0.6 TJ = 150J = 150 = 150 [[o]] C<br>J = 125 = 125 [[o]] C |llll<br>TTJ = 85J = 125TJ = 85J = 125J = 85J = 125 = 85J = 125 [[o]] C TJ = 25J = 25 = 25 [[o]] C<br>0.20.40.2<br>TJ = -55J = -55 = -55 [[o]] C<br>i<br>0 WZi<br>0 0.3 0.6 0.9 1.2 1.5<br>VSD, SOURCE-DRAIN VOLTAGE (V) SD, SOURCE-DRAIN VOLTAGE (V) , SOURCE-DRAIN VOLTAGE (V)<br>Figure 21. Diode Forward Voltage vs. Current<br>8<br>6<br>4<br>VDS = -15V, ID = -1A DS = -15V, ID = -1A = -15V, ID = -1A D = -1A = -1A<br>2<br>0 PTE<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6<br>Qg (nC) g (nC) (nC)<br>Figure 23. Gate Charge<br>, SOURCE CURRENT (A)<br>ISS<br> (V)<br>GS<br>V<br>**----- End of picture text -----**<br>
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DMC3730UFL3 Datasheet number: DS38571 Rev. 3 - 2
April 2016 © Diodes Incorporated
**DMC3730UFL3** ~~a~~
## ' nu c o R P o R A T =e D DIODES
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**----- Start of picture text -----**<br>
1<br>eee<br>D=0.9<br>nations: D=0.5 i aa D=0.7 el<br>oe a a Fitter<br>D=0.3 TIE LIL rr ETI EEE<br>0.1 AEa Aa a”aT eeEIIIEeeITIeeeEAT Til<br>D=0.1<br>STerrAO<br>A D=0.05 T<br>EoD? AMA<br>e T a ae amet ee<br>D=0.02<br>0.01 ay eeoeceA/ A ELITE IEEE LTTE<br>D=0.01 = EAHA EEEee<br>FeA aOeOO GO OO OOTT]<br>D=0.005 RθJA (t)=r(t) * RθJA mall<br>Cy TTA RθJA=329 ℃ /W mil<br>Duty Cycle, D=t1 / t2<br>D=Single Pulse<br>0.001<br>1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, Pulse Duration Time (sec)<br>Figure 25. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>
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**DMC3730UFL3**
## **Package Outline Dimensions**
Please see http://www.diodes.com/package-outlines.html for the latest version.
**X2-DFN1310-6 (Type B)**
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**----- Start of picture text -----**<br>
A3 X2-DFN1310-6<br>A A1 (Type B)<br>Dim Min Max Typ<br>Seating Plane A 0.25 0.35 0.30<br>ew D j —- A1 0 0.05 0.02<br>A3 – – 0.100<br>b D2<br>b 0.10 0.20 0.15<br>D 1.25 1.35 1.30<br>re ==e=<br>D2 0.30 0.50 0.40<br>E 0.95 1.05 1.00<br>E2<br>E2 0.30 0.50 0.40<br>z1(2x) e – – 0.35<br>E<br>k 0.15 – –<br>k<br>E2 e L 0.20 0.30 0.25<br>z – – 0.05<br>Pe Ld L === z1 – – 0.10<br>z2 – – 0.10<br>He | {f rr<br>All Dimensions in mm<br>z2(2x) D2 k z(2x)<br>**----- End of picture text -----**<br>
## **Suggested Pad Layout**
Please see http://www.diodes.com/package-outlines.html for the latest version.
**X2-DFN1310-6 (Type B)**
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p t G o X r<br>Y<br>G3 G1<br>a4<br>Y1<br>X1<br>C<br>mg G2<br>**----- End of picture text -----**<br>
|**Dimensions**|**Value**<br>**(in mm)**|
|---|---|
|**C**|**()**<br>0.350|
|**G**|0.17|
|**G1**|0.16|
|**G2**<br>**G3**|0.09<br>0.06|
|**G3**|0.06|
|**X**|0.20|
|**X1**|0.52|
|**Y**|0.375|
|**Y1**|0.52|
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DMC3730UFL3 Datasheet number: DS38571 Rev. 3 - 2
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**DMC3730UFL3**
## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
## **LIFE SUPPORT**
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
- A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
- B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
**www.diodes.com**
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April 2016 © Diodes Incorporated
Updated at June 9, 2026
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