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DMC3400SDW-13
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 650 mA, 650 mA, 0.2 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Complement; Continuous Drain Current Id:650mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage V
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOT-363
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 310mW
- Power Dissipation P Channel: 310mW
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 650mA
- Continuous Drain Current Id P Channel: 650mA
- Drain Source On State Resistance N Channel: 0.2ohm
- Drain Source On State Resistance P Channel: 0.2ohm
| Delivery and price | |
|---|---|
| Units per pack | 30000 |
| Price | 0.041 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**DMC3400SDW** **COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET** **==> picture [540 x 283] intentionally omitted <==** - Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 - Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 - Weight: 0.027 grams (Approximate) - Power Management Functions - DC-DC Converters **==> picture [472 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> D2<br>D1<br>D1 G2 S2<br>SOT363<br>G2<br>G1<br>ESD PROTECTED 2 & Top View O& Q1 N-CHANNEAL Gate Protection Diode S1 Q2 P-CHANNEAL Gate Protection Diode S2 __ S1 G1 D2<br>Top View<br>Pin out<br>g Information Information (Note 4)<br>Part Number Case Packaging<br>DMC3400SDW-7 SOT363 3000/Tape & Reel<br>DMC3400SDW-13 SOT363 10000/Tape & Reel<br>**----- End of picture text -----**<br> ## **Ordering Information Information** (Note 4) - Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. ## **Marking Information** CSI CSI = Product Type Marking Code YM = Date Code Marking Y or Y= Year (ex: B = 2014) M = Month (ex: 9 = September) Date Code Key **Year 2014 2015 2016 2017 2018 2019 2020** ~~sr~~ **Code** B C D E F G H **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~tt~~ **Code** 1 2 3 4 5 6 7 8 9 O N D 1 of 9 **www.diodes.com** DMC3400SDW Document number: DS37690 Rev. 1 - 2 February 2015 © Diodes Incorporated **DMC3400SDW** ## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) |||||||| |---|---|---|---|---|---|---| |**Characteristic**|||**Symbol**|**Value_Q1 **|**Value_Q2 **|**Units**| |Drain-Source Voltage|||VDSS|30|-30|V| |Gate-Source Voltage|||VGSS|±20|±20|V| |Continuous Drain Current (Note 6) VGS= 10V|Steady<br>State|TA= +25C<br>TA= +70C|ID|0.65<br>0.50|-0.45<br>-0.36|A| |Maximum Continuous BodyDiode Forward Current(Note 6)|||IS|0.4|-0.35|A| |Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)|||IDM|4|-3|A| ## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) |**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||| |---|---|---|---|---| |**Characteristic**||**Symbol**|**Value**|**Units**| |Total Power Dissipation(Note 5)||PD|0.31|W| |Thermal Resistance,Junction to Ambient(Note 5)|SteadyState|RθJA|406|°C/W| |Total Power Dissipation(Note 6)||PD|0.39|W| |Thermal Resistance,Junction to Ambient(Note 6)|SteadyState|RθJA|319|°C/W| |Thermal Resistance,Junction to Case||RθJC|126|°C/W| |Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C| ## **Electrical Characteristics – N Channel – Q1** (@TA = +25°C, unless otherwise specified.) |**Electrical Characteristics – N Channel – Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – N Channel – Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – N Channel – Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – N Channel – Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – N Channel – Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – N Channel – Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – N Channel – Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---|---| |||||||| |**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**| |**OFF CHARACTERISTICS(Note 7) **||||||| |Drain-Source Breakdown Voltage|BVDSS|30|-|-|V|VGS= 0V,ID= 250μA| |Zero Gate Voltage Drain Current|IDSS|-|-|1|μA|VDS= 24V,VGS= 0V| |Gate-Source Leakage|IGSS|-|-|±10|μA|VGS= ±16V,VDS= 0V| |**ON CHARACTERISTICS(Note 7) **<br>~~ee~~||||||| |Gate Threshold Voltage<br>~~ee~~|VGS(TH)<br>~~ee~~|0.8<br>~~ee~~|-<br>~~ee~~|1.6<br>~~ee~~|V<br>~~ee~~|VDS= VGS,ID= 250μA<br>~~ee~~| |Static Drain-Source On-Resistance<br>~~ee~~|RDS(ON)<br>~~ee~~|-<br>~~ee~~|0.2<br>~~ee~~|0.4<br>~~ee~~|Ω<br>~~ee~~|VGS= 10V,ID= 0.59A<br>~~ee~~| |||-<br>~~ee~~|0.3<br>~~ee~~|0.7<br>~~ee~~||VGS= 4.5V,ID= 0.2A<br>~~ee~~| |Diode Forward Voltage<br>~~ee~~|VSD<br>~~ee~~|-<br>~~ee~~|0.8<br>~~ee~~|1.2<br>~~ee~~|V<br>~~ee~~|VGS= 0V,IS= 0.23A<br>~~ee~~| |**DYNAMIC CHARACTERISTICS(Note 8)**||||||| |Input Capacitance<br>~~———~~|Ciss<br>~~———~~|-<br>~~———~~|55<br>~~———~~|-<br>~~———~~|pF<br>~~———~~|VDS= 15V, VGS= 0V,<br>f = 1.0MHz<br>~~———~~| |Output Capacitance<br>~~———~~|Coss<br>~~———~~|-<br>~~———~~|8.5<br>~~———~~|-<br>~~———~~|pF<br>~~———~~|| |Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~———~~|-<br>~~———~~|6.5<br>~~———~~|-<br>~~———~~|pF<br>~~———~~|| |Gate Resistance<br>~~———~~<br>~~———~~|Rg<br>~~———~~|-<br>~~———~~|92<br>~~———~~|-<br>~~———~~<br>~~e~~|Ω<br>~~———~~<br>~~e~~|VDS= VGS= 0V,f = 1.0MHz<br>~~———~~<br>~~eee~~| |Total Gate Charge(VGS= 4.5V)<br>~~———~~|Qg|-|0.6|-<br>~~e~~|nC<br>~~e~~|VDS= 10V,<br>ID= 250mA<br>~~eee~~<br>~~ee~~| |Total Gate Charge(VGS= 10V)<br>~~———~~|Qg|-|1.4|-<br>~~e~~|nC<br>~~e~~|| |Gate-Source Charge<br>~~———~~|Qgs|-|0.2|-<br>~~e~~|nC<br>~~e~~|| |Gate-Drain Charge<br>~~———~~<br>~~—<_~~|Qgd|-|0.1|-<br>~~e~~<br>~~ee~~|nC<br>~~e~~<br>~~ee~~|| |Turn-On DelayTime<br>~~———~~<br>~~—<_~~|tD(ON)|-|3.8|-<br>~~e~~<br>~~ee~~|ns<br>~~e~~<br>~~ee~~|VGS= 10V, VDS= 30V,<br>ID= 100mA, RG = 1Ω<br>~~eee~~<br>~~ee~~| |Turn-On Rise Time<br>~~———~~<br>~~—<_~~|tR|-|3.5|-<br>~~e~~<br>~~ee~~|ns<br>~~e~~<br>~~ee~~|| |Turn-Off DelayTime<br>~~—<_~~|tD(OFF)|-|25.2|-<br>~~ee~~|ns<br>~~ee~~|| |Turn-Off Fall Time<br>~~—<_~~|tF|-|18.8|-<br>~~ee~~|ns<br>~~ee~~|| 2 of 9 **www.diodes.com** DMC3400SDW Document number: DS37690 Rev. 1 - 2 February 2015 © Diodes Incorporated **DMC3400SDW** ## **Electrical Characteristics – P Channel – Q2** (@TA = +25°C, unless otherwise specified.) |**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**| |---|---|---|---|---|---|---| |**OFF CHARACTERISTICS(Note 7) **||||||| |Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|-30<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|V<br>~~ee~~|VGS= 0V,ID= -250μA<br>~~ee~~| |Zero Gate Voltage Drain Current<br>~~ee~~|IDSS<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|-1<br>~~ee~~|μA<br>~~ee~~|VDS= -24V,VGS= 0V<br>~~ee~~| |Gate-Source Leakage<br>~~ee~~|IGSS<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|±10<br>~~ee~~|μA<br>~~ee~~|VGS= ±16V,VDS= 0V<br>~~ee~~| |**ON CHARACTERISTICS(Note 7) **||||||| |Gate Threshold Voltage<br>~~Cf~~|VGS(TH)<br>~~Cf~~|-1<br>~~Cf~~|-<br>~~Cf~~|-2.6<br>~~Cf~~|V<br>~~Cf~~|VDS= VGS,ID= -250μA<br>~~Cf~~| |Static Drain-Source On-Resistance<br>~~rr~~|RDS(ON)<br>~~rr~~|-<br>~~rr~~|0.36<br>~~rr~~|0.9<br>~~rr~~|Ω<br>~~rr~~|VGS= -10V,ID= -0.42A<br>~~rr~~| |||-<br>~~rr~~|0.57<br>~~rr~~|1.7<br>~~rr~~||VGS= -4.5V,ID= -0.2A<br>~~rr~~| |Diode Forward Voltage<br>~~rr~~<br>~~>~~<br>~~7~~|VSD<br>~~rr~~<br>~~7~~<br>~~7~~|-<br>~~rr~~<br>~~7~~|-0.8<br>~~rr~~|-1.2<br>~~rr~~<br>~~So~~|V<br>~~rr~~<br>~~So~~|VGS= 0V,IS= -0.23A<br>~~rr~~<br>~~So~~| |**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~>~~<br>~~7~~<br>~~7~~<br>~~So~~||||||| |Input Capacitance<br>~~>~~<br>~~7~~|Ciss<br>~~7~~<br>~~7~~|-<br>~~7~~|54|-<br>~~So~~|pF<br>~~So~~|VDS= -15V, VGS= 0V,<br>f = 1.0MHz<br>~~So~~| |Output Capacitance<br>~~>~~<br>~~7~~|Coss<br>~~7~~<br>~~7~~|-<br>~~7~~|10|-<br>~~So~~|pF<br>~~So~~|| |Reverse Transfer Capacitance|Crss|-|8.3|-|pF|| |Gate Resistance|Rg|-|240<br>~~(~~|-<br>~~(~~|Ω|VDS= VGS= 0V,f = 1.0MHz| |Total Gate Charge(VGS= -4.5V)<br>~~DD~~|Qg<br>~~DD~~|-<br>~~DD~~|0.6<br>~~DD~~<br>~~(~~|-<br>~~DD~~<br>~~(~~|nC<br>~~DD~~|VDS= -10V, ID= -0.24A<br>~~eee~~| |Total Gate Charge(VGS= -10V)|Qg|-|1.3<br>~~(~~|-<br>~~(~~|nC|| |Gate-Source Charge|Qgs|-|0.2|-|nC|| |Gate-Drain Charge<br>~~——<—~~|Qgd|-|0.2|-<br>~~eee~~|nC<br>~~eee~~|| |Turn-On DelayTime<br>~~——<—~~|tD(ON)|-|5.7|-<br>~~eee~~|ns<br>~~eee~~|VGS= -10V, VDD= -15V,<br>ID= -0.5A, RG= 1Ω<br>~~eee~~| |Turn-On Rise Time<br>~~——<—~~|tR|-|8.8|-<br>~~eee~~|ns<br>~~eee~~|| |Turn-Off DelayTime<br>~~——<—~~|tD(OFF)|-|35|-<br>~~eee~~|ns<br>~~eee~~|| |Turn-Off Fall Time<br>~~——<—~~|tF|-|19|-<br>~~eee~~|ns<br>~~eee~~|| - Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 3 of 9 **www.diodes.com** DMC3400SDW Document number: DS37690 Rev. 1 - 2 February 2015 © Diodes Incorporated **DMC3400SDW** ## **Typical Characteristics - N-CHANNEL** **==> picture [499 x 650] intentionally omitted <==** **----- Start of picture text -----**<br> 1.5 1<br>VGS=3.5V VDS=5V<br>1.2 0.8<br>| VGS=4.0V pe<br>0.9 VGS=4.5V VGS=3.0V 0.6<br>We F p<br>0.6 0.4 TA=150 ℃<br>[\— - f<br>0.3 VGS=10V VGS=2.5V 0.2 TA=125 ℃ TA=25 ℃<br>Yo TA=85 ℃ an<br>VGS=2.0V TA=-55 ℃<br>0.0 a 0 Y~<br>0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>0.4 0.9<br>0.35 0.8<br>0.3 0.7 [eacereees ID=590mA<br>VGS=4.5V 0.6 SP cece<br>0.25<br>0.5 CCC<br>0.2<br>VGS=10V 0.4 CCE EEC<br>0.15<br>0.3<br>0.1<br>0.2<br>0.05 0.1 ID=200mA<br>0 — 0 FEEL AEEE OEE EE<br>0 0.2 0.4 0.6 0.8 1 1 3 5 7 9 11 13 15 17 19 21<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current Figure 4. Typical Transfer Characteristic<br>and Gate Voltage<br>0.6 1.8<br>VGS= 4.5V<br>0.5 TA=150 ℃ TA=125 ℃ 1.6<br>— TIT TIT<br>0.4 1.4 VGS=10V, ID=590mA<br>TA=85 ℃<br>0.3 — —— 1.2 HH) yA<br>rT TA=25 ℃ a Ao<br>0.2 1 VGS=4.5V, ID=200mA<br>TA=-55 ℃<br>0.1 Pt 0.8 aa<br>Pf fy ya<br>0 ft |] fl 0.6 ALTE ee<br>0 0.2 0.4 0.6 0.8 1 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs. Drain Figure 6. On-Resistance Variation with<br>Current and Temperature Temperature<br>, DRAIN CURRENT (A)ID , DRAIN CURRENT (A)ID<br>, DRAIN-SOURCE , DRAIN-SOURCE<br>DS(ON)ON-RESISTANCE (Ω) DS(ON)ON-RESISTANCE (Ω)<br>R R<br>, DRAIN-SOURCE<br>DS(ON)ON-RESISTANCE (Ω) , DRAIN-SOURCE<br>R DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br> 4 of 9 **www.diodes.com** DMC3400SDW February 2015 © Diodes Incorporated Document number: DS37690 Rev. 1 - 2 **DMC3400SDW** **==> picture [491 x 683] intentionally omitted <==** **----- Start of picture text -----**<br> 0.6 2<br>1.8<br>0.5 Py ft) yp yd P| | | | ty<br>1.6 ID=1mA<br>0.4 VGS=4.5V, ID=200mA S 1.4 S<br>0.3 1.2<br>pate o e ID=250µA ,<br>1<br>0.2 cae: ann NN<br>0.8<br>0.1 — VGS=10V, ID=590mA - P| ttt | tt<br>0 a _ 0.60.4 P| PPP ttt | tt<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ ) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Figure 8. Gate Theshold Variation vs. Junction<br>Temperature Temperature<br>1 100<br>f=1MHz<br>0.9 VGS=0V<br>0.8 PAT S SS Ciss<br>0.7 O P<br>0.6<br>0.5 PTees |i 10 N ee e Coss eaa<br>0.4 TA=150 ℃ TA=85 ℃<br>0.3 re S S Crss —<br>ATT) =—————<br>0.2 TA=125 ℃ TA=25 ℃<br>0.1 HT | TA=-55 ℃ e e<br>0 — DY) 1 P| | |ff<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>10 10<br>R<br>DS(ON)<br>Limited<br>8<br>1<br>6 DC<br>PW=10s<br>0.1<br>PW=1s<br>4 PW=100ms<br>VDS=10V, ID=250mA 0.01 TJ(Max)=150 ℃ PW=10ms<br>2 TA=25 ℃ ene PW=1ms SS ee<br>VGS=10V<br>Single PulseDUT on 1*MRP Board PW=100μs<br>0 0.001 Tu Cee<br>0 0.3 0.6 0.9 1.2 1.5 0.1 1 10 100<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area<br>, DRAIN-SOURCE<br>DS(ON)ON-ESISTANCE (Ω)<br>R<br>, GATE THESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> 5 of 9 **www.diodes.com** DMC3400SDW Document number: DS37690 Rev. 1 - 2 February 2015 © Diodes Incorporated **DMC3400SDW** ## **Typical Characteristics - P-CHANNEL** **==> picture [499 x 639] intentionally omitted <==** **----- Start of picture text -----**<br> 1.5 1<br>VGS=-4.0V 0.9 VDS= -5V<br>1.2 VGS=-4.5V VGS=-3.5V 0.8<br>0.7<br>0.9 0.6<br>[no 0.5<br>0.6 VGS=-3.0V 0.4<br>Ho VGS=-10V a<br>0.3 TA=150 ℃<br>0.3 | VGS=-2.5V 0.2 TA=125 ℃ TA=85 ℃<br>Poeangggteee 0.1 =o0eS an TA=25 ℃ e<br>0.0 p oo VGS=-2.0V 0 TA=-55 ℃<br>0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 13. Typical Output Characteristic Figure 14. Typical Transfer Characteristic<br>0.8 2<br>1.8<br>0.7 TTT IIII1. 1.6 CO ID=-420mA<br>0.6 cet 1.4 te<br>0.5 Pee) VGS=-4.5V 1.2<br>1<br>0.4<br>0.8<br>0.3 —— 0.6<br>VGS=-10V<br>0.4<br>0.2 a 4 PTAC<br>0.2<br>ID=-200mA<br>0.1 PEELE ELLE 0 PECLpf TATEca<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 15. Typical On-Resistance vs. Drain Figure 16. Typical Transfer Characteristic<br>Current and Gate Voltage<br>1.2 1.8<br>1 VGS=- 4.5V TA=150 ℃ TA=125 ℃ 1.6<br>0.8 Tee §€60A 1.4<br>=e [it] ily<br>0.6 TA=85 ℃ 1.2 VGS=-10V, ID=-420mA<br>TA=25 ℃<br>0.4 soanFFT e uee s a 1 SEE Sae<br>TA=-55 ℃ VGS=-4.5V, ID=-200mA<br>0.2 PPTTt 0.8 ef<br>0 PELE eyeELL EEL 0.6 Beaneanne<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 -50 -25 0 25 50 75 100 125 150<br>Figure 17. Typical On-Resistance vs. Drain ID, DRAIN CURRENT (A) Figure 18. On-Resistance Variation with TJ, JUNCTION TEMPERATURE ( ℃ )<br>Current and Temperature Temperature<br>, DRAIN CURRENT (A)<br>, DRAIN CURRENT (A)ID ID<br>, DRAIN-SOURCE<br>, DRAIN-SOURCE<br>DS(ON)ON-RESISTANCE (Ω)<br>R DS(ON)ON-RESISTANCE (Ω)<br>R<br>, DRAIN-SOURCE , DRAIN-SOURCE<br>DS(ON)<br>DS(ON)ON-RESISTANCE (Ω) R<br>R<br>ON-RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br> 6 of 9 **www.diodes.com** DMC3400SDW Document number: DS37690 Rev. 1 - 2 February 2015 © Diodes Incorporated **DMC3400SDW** **==> picture [225 x 217] intentionally omitted <==** **----- Start of picture text -----**<br> 2<br>1.8 |—S—_ ER<br>ID=-1mA<br>1.6 SSO O<br>ID=-250µA<br>1.4 OO SNSk<br>1.2 tities<br>1 TTT TTT)<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 20. Gate Theshold Variation vs. Junction<br>Temperature<br>, GATE THESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br> **==> picture [236 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.9<br>0.8 HERE R EE—_|<br>0.7 VGS=-4.5V, ID=-200mA<br>e e<br>0.6 r<br>0.5<br>0.4 eeAnnan<br>0.3 VGS=-10V, ID=-420mA<br>0.2 imT =<br>0.1<br>0 a<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 19. On-Resistance Variation with Temperature<br>, DRAIN-SOURCE<br>DS(ON)ON-ESISTANCE (Ω)<br>R<br>**----- End of picture text -----**<br> **==> picture [491 x 435] intentionally omitted <==** **----- Start of picture text -----**<br> 1 100<br>f=1MHz<br>0.9 VGS=0V WT ————— a<br>0.8 Ciss<br>0.7 oe || ao SS<br>0.6<br>0.5 HEeee || 10 Sa e Coss<br>0.4<br>0.3 I TA=150 ℃ TA=85 ℃ = Crss<br>0.2 TA=125 ℃ ATLA TA=25 ℃ e e<br>0.1 HT TA=-55 ℃ i a<br>0 WT) 1 P| | et<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 21. Diode Forward Voltage vs. Current Figure 22. Typical Junction Capacitance<br>10 10<br>R<br>DS(ON)<br>Limited<br>HT pe NO AN<br>8<br>1<br>ee NI<br>6<br>| pe" DC Ty NOY Baanll<br>0.1 PW=10s W=10s =10s<br>4 PW=1s W=1s =1s<br>VDS=-10V, ID=-0.24A 0.01 ;PTPT| TJ(Max)J(Max)=150 | | =150 ℃ PW=100ms PW=10ms PWW=100ms PW=10ms PW=100ms PW=10ms PWPW=10ms PWW=10ms PW=10ms PWPWW=1ms I =1ms ATHS ISAATFEOUN PtET TyHS ISAATFEOUN PtET Ty ISAATFEOUN PtET Ty PtET TyET Ty Ty<br>2 TA=25A=25=25 ℃<br>VGS=10VGS=10V=10V PW=100µs W=100µs =100µs<br>Single Pulse<br>DUT on 1*MRP Board |<br>0 0.001<br>0 0.3 0.6 0.9 1.2 1.5 0.1 1 10 100<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)DS, DRAIN-SOURCE VOLTAGE (V), DRAIN-SOURCE VOLTAGE (V)<br>Figure 23. Gate Charge Figure 24. SOA, Safe Operation Area<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>IDD<br>**----- End of picture text -----**<br> **==> picture [226 x 221] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>R<br>DS(ON)<br>Limited<br>HT pe NO AN<br>1<br>ee NI<br>| pe" DC Ty NOY Baanll<br>0.1 PW=10s W=10s =10s<br>PW=1s W=1s =1s<br>;PTPT| | I ATHS ISAATFEOUN PtET TyHS ISAATFEOUN PtET Ty ISAATFEOUN PtET Ty PtET TyET Ty Ty<br>0.01 TJ(Max)J(Max)=150 ℃ PW=100ms PW=10ms PWW=100ms PW=10ms PW=100ms PW=10ms PWPW=10ms PWW=10ms PW=10ms PWPWW=1ms<br>TA=25A=25=25 ℃<br>VGS=10VGS=10V=10V PW=100µs W=100µs =100µs<br>Single Pulse<br>DUT on 1*MRP Board |<br>0.001<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)DS, DRAIN-SOURCE VOLTAGE (V), DRAIN-SOURCE VOLTAGE (V)<br>Figure 24. SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>IDD<br>**----- End of picture text -----**<br> 7 of 9 **www.diodes.com** DMC3400SDW Document number: DS37690 Rev. 1 - 2 February 2015 © Diodes Incorporated **DMC3400SDW** **==> picture [365 x 261] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>EEE Se ert<br>SSee eo”Se alll D=0.9 Siitieaetn|<br>Pt ld |<br>CCC rete No D=0.7 Cr<br>D=0.5<br>HHI eae |<br>0.1 ye D=0.3 UME<br>EE ALI<br>ee ay) 4 D=0.1 A0<br>e/aiiar/A HTHSPP<br>D=0.05<br>ar a7 eae L R<br>D=0.02<br>0.01 MaLg_Y S TAM ETI C T A TET TET<br>D=0.01<br>ae: TT ATU<br>CS<br>D=0.005<br>CZ fhe culennFEES TEE TATE RθJA(t)=r(t) * R STS θJA coTT<br>Oa HE RθJA=413 ℃ /W TTT<br>Duty Cycle, D=t1/t2<br>D=Single Pulse<br>0.001<br>1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 25. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> ## **Package Outline Dimensions** Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf the for latest version. **==> picture [345 x 140] intentionally omitted <==** **----- Start of picture text -----**<br> +L A ee SOT363<br>es Dim Min Max Typ<br>ee A 0.10 0.30 0.25<br>+ a<br>B C B 1.15 1.35 1.30<br>C 2.00 2.20 2.10<br>es D 0.65 Typ<br>| F — 0.40 0.45 0.425<br>H 1.80 2.20 2.15<br>H<br>J 0 0.10 0.05<br>K M K 0.90 1.00 1.00<br>L 0.25 0.40 0.30<br>ACH) jaa ‘ oe M 0.10 0.22 0.11<br>sae J D | F aS L — 0° 8° -<br>All Dimensions in mm<br>**----- End of picture text -----**<br> ## **Suggested Pad Layout** Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf the for the latest version. **==> picture [122 x 104] intentionally omitted <==** **----- Start of picture text -----**<br> C2 C2<br>I K ae<br>|<br>G C1<br>Z<br>Y<br>tooo<br>X<br>**----- End of picture text -----**<br> |**Dimensions Value**|**Dimensions Value(in mm)**| |---|---| |**Z**|2.5| |**G**|1.3| |**X**|0.42| |**Y**|0.6| |**C1**|1.9| |**C2**|0.65| 8 of 9 **www.diodes.com** DMC3400SDW Document number: DS37690 Rev. 1 - 2 February 2015 © Diodes Incorporated **DMC3400SDW IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or fF 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated **www.diodes.com**[;] 9 of 9 **www.diodes.com** DMC3400SDW Document number: DS37690 Rev. 1 - 2 February 2015 © Diodes Incorporated
Updated at June 9, 2026
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