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DMC31D5UDJ-7
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 220 mA, 220 mA, 1.5 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOT-963
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 350mW
- Power Dissipation P Channel: 350mW
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 220mA
- Continuous Drain Current Id P Channel: 220mA
- Drain Source On State Resistance N Channel: 1.5ohm
- Drain Source On State Resistance P Channel: 5ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.127 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**DMC31D5UDJ** &. **COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET** -— : ## **Product Summary** |**Device**<br>**V(BR)DSS**<br>**RDS(ON) max**<br>**ID max**<br>**TA = +25°C**<br>Q1<br>30V<br>1.5Ω@VGS= 4.5V<br>0.22A<br>2.0Ω@VGS= 2.5V<br>3.0Ω@VGS= 1.8V<br>4.5Ω@VGS= 1.5V<br>Q2<br>-30V<br>5Ω@VGS= -4.5V<br>-0.2A<br>6Ω@VGS= -2.5V<br>7Ω@VGS= -1.8V<br>10Ω@VGS= -1.5V|**Device**<br>**V(BR)DSS**<br>**RDS(ON) max**<br>**ID max**<br>**TA = +25°C**<br>Q1<br>30V<br>1.5Ω@VGS= 4.5V<br>0.22A<br>2.0Ω@VGS= 2.5V<br>3.0Ω@VGS= 1.8V<br>4.5Ω@VGS= 1.5V<br>Q2<br>-30V<br>5Ω@VGS= -4.5V<br>-0.2A<br>6Ω@VGS= -2.5V<br>7Ω@VGS= -1.8V<br>10Ω@VGS= -1.5V|**Device**<br>**V(BR)DSS**<br>**RDS(ON) max**<br>**ID max**<br>**TA = +25°C**<br>Q1<br>30V<br>1.5Ω@VGS= 4.5V<br>0.22A<br>2.0Ω@VGS= 2.5V<br>3.0Ω@VGS= 1.8V<br>4.5Ω@VGS= 1.5V<br>Q2<br>-30V<br>5Ω@VGS= -4.5V<br>-0.2A<br>6Ω@VGS= -2.5V<br>7Ω@VGS= -1.8V<br>10Ω@VGS= -1.5V|**Device**<br>**V(BR)DSS**<br>**RDS(ON) max**<br>**ID max**<br>**TA = +25°C**<br>Q1<br>30V<br>1.5Ω@VGS= 4.5V<br>0.22A<br>2.0Ω@VGS= 2.5V<br>3.0Ω@VGS= 1.8V<br>4.5Ω@VGS= 1.5V<br>Q2<br>-30V<br>5Ω@VGS= -4.5V<br>-0.2A<br>6Ω@VGS= -2.5V<br>7Ω@VGS= -1.8V<br>10Ω@VGS= -1.5V| |---|---|---|---| |**Device**|**V(BR)DSS**|**RDS(ON) max**|**ID max**<br>**TA = +25°C**| |Q1|30V|1.5Ω@VGS= 4.5V|0.22A| |||2.0Ω@VGS= 2.5V|| |||3.0Ω@VGS= 1.8V|| |||4.5Ω@VGS= 1.5V|| |Q2|-30V|5Ω@VGS= -4.5V|-0.2A| |||6Ω@VGS= -2.5V|| |||7Ω@VGS= -1.8V|| |||10Ω@VGS= -1.5V|| ## **Features and Benefits** - Low On-Resistance - Very low Gate Threshold Voltage, 1.0V max - Low Input Capacitance - Fast Switching Speed - Ultra-Small Surface Mount Package 1mm x 1mm - ESD Protected Gate - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** - **Halogen and Antimony Free. “Green” Device (Note 3)** - **Qualified to AEC-Q101 standards for High Reliability** ## **Mechanical Data** - Case: SOT963 ## **Description** This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ## **Applications** - General Purpose Interfacing Switch - Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminal Connections Indicator: See Diagram - Terminals: Finish ⎯ Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 **e3** - Weight: 0.027 grams (approximate) - Power Management Functions - Analog Switch **==> picture [69 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> ESD PROTECTED<br>**----- End of picture text -----**<br> **==> picture [183 x 123] intentionally omitted <==** **----- Start of picture text -----**<br> SOT963 D1 G2 S2<br>ELE<br>S1 G1 D2<br>Top View<br>Top View Schematic and<br>Transistor Diagram<br>**----- End of picture text -----**<br> ## **Ordering Information** (Note 4) |**Ordering Informationg Information Information** (Note 4)Note 4))|**Ordering Informationg Information Information** (Note 4)Note 4))|**Ordering Informationg Information Information** (Note 4)Note 4))| |---|---|---| |||| |**Part Number**|**Case**|**Packaging**| |DMC31D5UDJ-7|SOT963|10K/Tape & Reel| |DMC31D5UDJ-7B|SOT963|10K/Tape&Reel| - Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. The options -7 and -7B stand for different taping orientations. ## **Marking Information** **==> picture [14 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> U1<br>**----- End of picture text -----**<br> **==> picture [122 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> U1 = Product Type Marking Code<br>**----- End of picture text -----**<br> 1 of 9 **www.diodes.com** DMC31D5UDJ Document number: DS36799 Rev. 2 - 2 June 2014 © Diodes Incorporated **DMC31D5UDJ** ## **Maximum Ratings Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratingsgss** **Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---| ||||||| |**Characteristic**|||**Symbol**|**Value**|**Units**| |Drain-Source Voltage|||VDSS|30|V| |Gate-Source Voltage|||VGSS|±12|V| |Continuous Drain Current (Note 5) VGS= 4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|220<br>160|mA| |Maximum Continuous Body Diode Forward Current (Note 6)|||IS|200|mA| |Pulsed Drain Current (Note 6)|||IDM|600|mA| ## **Maximum Ratings Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratingsgss** **Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---| ||||||| |**Characteristic**|||**Symbol**|**Value**|**Units**| |Drain-Source Voltage|||VDSS|-30|V| |Gate-Source Voltage|||VGSS|±12|V| |Continuous Drain Current (Note 5) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-200<br>-140|mA| |Maximum Continuous Body Diode Forward Current (Note 6)|||IS|-200|mA| |Pulsed Drain Current (Note 6)|||IDM|-600|mA| ## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) |||||| |---|---|---|---|---| |**Characteristic**||**Symbol**|**Value**|**Units**| |Total Power Dissipation(Note 5)||PD|350|mW| |Thermal Resistance, Junction to Ambient (Note 5)|Steady State|RθJA|361|°C/W| |Operating and Storage Temperature Range||TJ, TSTG|-55 to +150|°C| **Electrical Characteristics Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.) |~~ee~~|~~ee~~|~~ee~~|~~ee~~|~~ee~~|~~ee~~|~~ee~~| |---|---|---|---|---|---|---| |**Characteristic**<br>~~ee~~|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**| |**OFF CHARACTERISTICS(Note 7) **<br>~~ee~~||||||| |Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS|30|—|—|V|VGS= 0V, ID= 250μA| |Zero Gate Voltage Drain Current@TC= +25°C<br>~~ee~~<br>~~ee~~|IDSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|100<br>~~ee~~|nA<br>~~ee~~|VDS= 24V, VGS= 0V<br>~~ee~~| |Gate-Source Leakage<br>~~ee~~|IGSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|±10<br>~~ee~~|µA<br>~~ee~~|VGS= ±10V, VDS= 0V<br>~~ee~~| |**ON CHARACTERISTICS(Note 7) **||||||| |Gate Threshold Voltage|VGS(th)|0.4|—|1.0|V|VDS= VGS, ID= 250μA<br>~~=~~| |Static Drain-Source On-Resistance<br>~~===~~|RDS(ON)<br>~~===~~|—<br>~~===~~|0.9<br>~~===~~|1.5<br>~~===~~|Ω<br>~~===~~|VGS= 4.5V, ID= 100mA<br>~~===~~<br>~~=~~| |||—<br>~~===~~|1.0<br>~~===~~|2.0<br>~~===~~||VGS= 2.5V, ID= 50mA<br>~~===~~<br>~~=~~| |||—<br>~~===~~|1.2<br>~~===~~|3.0<br>~~===~~||VGS= 1.8V, ID= 20mA<br>~~===~~<br>~~=~~| |||—<br>~~===~~|1.4<br>~~===~~|4.5<br>~~===~~||VGS= 1.5V, ID= 10mA<br>~~===~~<br>~~=~~| |||—<br>~~===~~|2.3<br>~~===~~|—<br>~~===~~||VGS= 1.2V, ID= 1mA<br>~~===~~<br>~~=~~| |Diode Forward Voltage|VSD|—|0.6|1.0|V|VGS= 0V, IS= 10mA<br>~~=~~| |**DYNAMIC CHARACTERISTICS(Note 8)**||||||| |Input Capacitance<br>~~I~~|Ciss<br>~~I~~|—<br>~~I~~|22.6<br>~~I~~|—<br>~~I~~|pF<br>~~I~~|VDS= 15V, VGS= 0V,<br>f = 1.0MHz<br>~~ee~~| |Output Capacitance<br>~~Re~~|Coss|—|2.68|—|pF|| |Reverse Transfer Capacitance<br>~~—~~|Crss<br>~~ee~~|—<br>~~ee~~|1.8|—<br>~~ee~~|pF<br>~~ee~~|| |Total Gate Charge<br>~~———~~<br>~~—~~|Qg<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|0.38<br>~~———~~|—<br>~~———~~<br>~~ee~~|nC<br>~~———~~<br>~~ee~~|VGS= 4.5V, VDS= 15V,<br>ID= 200mA<br>~~———~~<br>~~ee~~| |Gate-Source Charge<br>~~———~~<br>~~—~~|Qgs<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|0.05<br>~~———~~|—<br>~~———~~<br>~~ee~~|nC<br>~~———~~<br>~~ee~~|| |Gate-Drain Charge<br>~~———~~<br>~~—~~|Qgd<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|0.07<br>~~———~~|—<br>~~———~~<br>~~ee~~|nC<br>~~———~~<br>~~ee~~|| |Turn-On Delay Time<br>~~———~~<br>~~—~~|tD(on)<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|3.2<br>~~———~~|—<br>~~———~~<br>~~ee~~|ns<br>~~———~~<br>~~ee~~|VDD= 15V, VGS= 4.5V,<br>RG= 2Ω, ID= 200mA<br>~~———~~<br>~~ee~~| |Turn-On Rise Time<br>~~—~~|tr<br>~~ee~~|—<br>~~ee~~|2.2|—<br>~~ee~~|ns<br>~~ee~~|| |Turn-Off Delay Time<br>~~—~~|tD(off)<br>~~ee~~|—<br>~~ee~~|21|—<br>~~ee~~|ns<br>~~ee~~|| |Turn-Off Fall Time<br>~~—~~|tf<br>~~ee~~|—<br>~~ee~~|7.5|—<br>~~ee~~|ns<br>~~ee~~|| 2 of 9 **www.diodes.com** DMC31D5UDJ Document number: DS36799 Rev. 2 - 2 June 2014 © Diodes Incorporated **DMC31D5UDJ** **Electrical Characteristics Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.) **==> picture [523 x 299] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||||| |---|---|---|---|---|---|---|---|---|---| |Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition| |OFF CHARACTERISTICS (Note 7)| |GO|Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @TC = +25°C|BVIDSSDSS|-30 —|DDO|——|100 —|nA V|VVGSDS = -24V, V = 0V, ID = -250GS = 0V μA| |——————|Gate-Source Leakage|IGSS|—|—|±10|µA|VGS = ±10V, VDS = 0V| |ON CHARACTERISTICS (Note 7)| |Gate Threshold Voltage|VGS(th)|-0.4|—|-1.0|V|VDS = VGS, ID = -250μA| |—|2.0|5|VGS = -4.5V, ID = -100mA| |—|2.5|6|VGS = -2.5V, ID = -50mA| |Static Drain-Source On-Resistance|RDS(ON)|es|—|3.0|ee|7|Ω|pO|VGS = -1.8V, ID = -20mA| |—|3.4|10|VGS = -1.5V, ID = -10mA| |||—|5.1|—|VGS = -1.2V, ID = -1mA| |Diode Forward Voltage|VSD|—|-0.6|-1.0|V|VGS = 0V, IS = -10mA| |DYNAMIC CHARACTERISTICS (Note 8)|Eee| |GG|Input Capacitance|Ciss|—|21.8|—|pF| |pT|Output Capacitance|Coss|—|2.82|—|pF|f = 1.0MHz VDS = -15V, VGS = 0V,| |Reverse Transfer Capacitance|Crss|—|1.66|—|pF| |Total Gate Charge Gate-Source Charge|QQggs|——|0.35 0.05|——|nC nC|VIDGS = -200mA = -4.5V, VDS =- 15V,| |Gate-Drain Charge|Qgd|—|0.10|—|nC| |Turn-On Delay Time|tD(on)|—|3.5|—|ns| |GO|Turn-On Rise Time|tr|—|5.2|—|ns|VDD = -15V, VGS = -4.5V,| |Turn-Off Delay Time|tD(off)|—|18.8|—|ns|RG = 2Ω, ID = -200mA| |Turn-Off Fall Time|tf|—|8.7|—|ns| |———|Notes:|5. Device mounted on FR-4 PCB, with minimum recommended pad layout.|ee| **----- End of picture text -----**<br> Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 3 of 9 **www.diodes.com** DMC31D5UDJ Document number: DS36799 Rev. 2 - 2 June 2014 © Diodes Incorporated **DMC31D5UDJ** ## **N-CHANNEL** **==> picture [485 x 668] intentionally omitted <==** **----- Start of picture text -----**<br> 0.8 0.6<br>VGS = 4.5V<br>VGS = 2.0V VDS = 5.0V<br>0.7<br>a / 74 Ij<br>VGS = 4.0V VGS = 2.5V 0.5<br>0.6<br>VGS = 3.0V<br>VGS = 1.5V 0.4<br>0.5<br>ff !<br>0.4 0.3<br>0.3<br>7 A 0.2 ff<br>0.2 VGS = 1.2V TA = 150°C TA = 85°C<br>——— 0.1 —-~<br>0.1 TA = 125°C TA = 25°C<br>Le VGS = 1.0V f<br>TA = -55°C<br>0.0 po 0 iF<br>0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>3 3<br>VGS = 4.5V<br>2.5 LEE EEL 2.5 tL LEE<br>TA = 150°C<br>2 2<br>LEE LLL BERREEDZ TA = 125°C<br>VGS = 1.5V TA = 85°C<br>1.5 VGS = 1.8V V GS = 2.5V 1.5<br>TA = 25°C<br>1 Sere ty VGS = 4.5V 1 a T A = -55°C<br>0.5 TTT 0.5 ee<br>0 LE ELE LE 0 PLE LLELE<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8<br>ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A)<br>Figure 3 Typical On-Resistance vs. Figure 4 Typical On-Resistance vs.<br>Drain Current and Gate Voltage Drain Current and Temperature<br>1.8 3<br>VGS 4.5= V<br>1.6 I D = 300mA 2.5<br>1.4 nySaaene ue4 2 tttSea<br>IVDGS= 100mA 2.5= V VGS 2= .5V<br>ID = 100mA<br>1.2 1.5<br>aaa ||<br>VGS 4.5= V<br>1 1 ID = 300mA<br>BEEVAnEE ee<br>0.8 0.5 py<br>let ae<br>0.6 rl ELL EL 0 LETTE | | LE<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 5 On-Resistance Variation with Temperature Figure 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>D D<br> I I<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE (<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> 4 of 9 DMC31D5UDJ Document number: DS36799 Rev. 2 - 2 June 2014 © Diodes Incorporated **www.diodes.com** **DMC31D5UDJ** **==> picture [484 x 439] intentionally omitted <==** **----- Start of picture text -----**<br> 1 0.8<br>0.7<br>0.9<br>Baa ee | nae<br>0.6<br>0.8 TA = 150°C<br>mE EE | 0.5 ee<br>0.7 ID = 1mA 0.4 TA = 125°C<br>SO ID = 250µA oe || TA = 25°C<br>0.3 T A = 85°C<br>0.6<br>ORK a<br>0.2 T A = -55°C<br>0.5<br>SOON<br>0.1<br>0.4-50 eT -25 0 EET 25 50 LEER 75 100 125 150 0 0 a 0.3 ZA 0.6 0.9 1.2 1.5<br>TJ, JUNCTION TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 7 Gate Threshold Variation vs. Ambient Temperature Figure 8 Diode Forward Voltage vs. Current<br>100 10<br>8<br>Ciss<br>—— 6 /<br>VDS = 15V<br>10 ID 200m= A<br>4<br>C oss 2<br>SSean C rss e y,<br>f = 1MHz<br>1 — 0 MELLEL<br>0 5 10 15 20 25 30 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>VDS, DRAIN-SOURCE VOLTAGE (V) Qg [, TOTAL GATE CHARGE ] (nC)<br>Figure 9 Typical Junction Capacitance Figure 10 Gate Charge<br>, SOURCE CURRENT (A)<br>IS<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>V<br>, JUNCTION CAPACITANCE (pF) GATE THRESHOLD VOLTAGE (V)<br>CT GS<br>V<br>**----- End of picture text -----**<br> 5 of 9 **www.diodes.com** DMC31D5UDJ Document number: DS36799 Rev. 2 - 2 June 2014 © Diodes Incorporated **DMC31D5UDJ** ## **P-CHANNEL** **==> picture [482 x 669] intentionally omitted <==** **----- Start of picture text -----**<br> 0.8 0.6<br>VGS = -4.5V<br>VGS = -2.5V VDS = -5.0V<br>0.7 VGS = -4.0V VGS = -3.0V 0.5<br>0.6<br>0.4<br>0.5 Ame<br>VGS = -2.0V<br>0.4 0.3<br>Aare ae<br>0.3 © ee a<br> Za) Ae<br>0.2<br>VGS = -1.5V<br>0.2<br>TA = 150°C<br>f—— VGS = -1.2V 0.1 (fo<br>0.10.0 | Ar VGS = -1.0V 0 TAT = 85A = 125°C °C f TAT = 25A = -55°C °C<br>0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3<br>Figure 1 Typical Output Characteristics-VDS, DRAIN -SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 2 Typical Transfer Characteristics<br>8<br>VGS = -4.5V<br>|<br>7 tt ye<br>Sea<br>6<br>VGS = -1.5V 5 TA = 150°C<br>VGS = -1.8V VGS = -2.5V<br>VGS = -4.5V 4 Sanneeee|| | pL eee<br>3 i TA = 125°C TA = 85°C<br>i aa<br>| [| te<br>2 T A = 25°C<br>TA = -55°C<br>1 ooeaee=<br>0.1 0 FEE]<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.1 0.2 0.3 0.4 0.5 Et 0.6 0.7 ty 0.8<br>-ID, DRAIN SOURCE CURRENT (A) -ID, DRAIN SOURCE CURRENT (A)<br>Figure 3 Typical On-Resistance vs. Figure 4 Typical On-Resistance vs.<br>Drain Current and Gate Voltage Drain Current and Temperature<br>1.8 6<br>VGS = -4.5V<br>ID = -300mA<br>THI<br>1.6 5<br>Yw Oo<br>1.4 4 VGS -2.5= V<br>VGS = -2.5V ID -100m= A<br>ID = -100mA<br>1.2 OA 3 BEREEgED<br>VGS = -4.5V<br>ID -300m= A<br>1 eT 2 eee<br>BnnZAn Ep2>7ann<br>0.8 1<br>Att) =o eg<br>0.6 ALT 0 EE<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 5 On-Resistance Variation with Temperature Figure 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)-ID , DRAIN CURRENT (A)-ID<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED) , DRAIN-SOURCE ON-RESISTANCE (<br>DS(on)<br>R<br>**----- End of picture text -----**<br> 6 of 9 DMC31D5UDJ Document number: DS36799 Rev. 2 - 2 June 2014 © Diodes Incorporated **www.diodes.com** **DMC31D5UDJ** **==> picture [483 x 676] intentionally omitted <==** **----- Start of picture text -----**<br> 1 0.8<br>0.7<br>0.9<br>0.6<br>0.8 S NS -ID = 1mA ET— TA= 150°C<br>0.5 ee| ae<br>0.7 0.4 TA= 125°C<br>-ID = 250µA<br>0.6 0.3 T A = 85°C TA= 25°C<br>~ }-<br>RA 0.2<br>0.5 0.1 TA= -55°C<br>0.4 EELS ELL ELLE 0 amez,<br>-50 -25 0 25 50 75 100 125 150 0 0.3 0.6 0.9 1.2 1.5<br>TA, AMBIENT TEMPERATURE (°C) -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 7 Gate Threshold Variation vs. Ambient Temperature Figure 8 Diode Forward Voltage vs. Current<br>100 10<br>f = 1MHz<br>———— (<br>8<br>=—————— ee<br>Ciss<br>6<br>10 See OH VDS = -15V<br>ID = -200mA<br>4<br>BS=S== Uf<br>C oss 2<br>SSeS UY<br>Crss<br>1 lee 0 VELL ELE<br>0 5 10 15 20 25 30 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8<br>-VDS, DRAIN-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)<br>Figure 9 Typical Junction Capacitance Figure 10 Gate-Charge Characteristics<br>1<br>D = 0.9<br>D = 0.7<br>D = 0.5<br>D = 0.3<br>INT PINT TT | Ue Ee<br>0.1<br>D = 0.1<br>D = 0.05<br>Se D = 0.02 EE<br>0.01<br>D = 0.01<br>D = 0.005<br>TE EEE TEE R θJA (t) = r(t) * R θJA |<br>Single Pulse R θJA = 365°C/W<br>Duty Cycle, D = t1/ t2<br>0.001 TT<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIMES (sec)<br>Figure 11 Transient Thermal Resistance<br>, SOURCE CURRENT (A)<br>S<br>, GATE THRESHOLD VOLTAGE (V) -I<br>GS(TH)<br>V<br>, JUNCTION CAPACITANCE (pF) , GATE-SOURCE VOLTAGE (V)<br>T GS<br>C -V<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> 7 of 9 **www.diodes.com** DMC31D5UDJ Document number: DS36799 Rev. 2 - 2 June 2014 © Diodes Incorporated **DMC31D5UDJ** | **==> picture [298 x 402] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||| |---|---|---|---|---|---|---| |D| |e1| |SOT963| |L| |Dim|Min|Max|Typ| |A|0.40|0.50|0.45| |A1|0|0.05|-| |E1|E| |c|0.120|0.180|0.150| |D|0.95|1.05|1.00| |E|0.95|1.05|1.00| |E1|0.75|0.85|0.80| |e|b (6 places)|c|L|0.05|0.15|0.10| |b|0.10|0.20|0.15| |e|0.35 Typ| |e1|0.70 Typ| |A|All Dimensions in mm| |A1| |out| |ool| |C|C| |Dimensions|Value (in mm)| |C|0.350| |X|0.200| |Y1|Y|0.200| |Y1|1.100| |Y (6X)| |TEI| |X (6X)| **----- End of picture text -----**<br> ## **Package Outline Dimensions** Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. ## **Suggested Pad Layout** Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 8 of 9 **www.diodes.com** DMC31D5UDJ Document number: DS36799 Rev. 2 - 2 June 2014 © Diodes Incorporated **DMC31D5UDJ** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. ## **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: - A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2014, Diodes Incorporated **www.diodes.com** 9 of 9 **www.diodes.com** DMC31D5UDJ Document number: DS36799 Rev. 2 - 2 June 2014 © Diodes Incorporated
Updated at June 9, 2026
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