DMC3071LVT-7

Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 4.6 A, 4.6 A, 0.05 ohm

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Manufacturer: DIODES INC.
Product type: Dual MOSFETs
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 6Pins
Channel Type: Complementary N and P Channel
Product Range: -
Qualification: -
Transistor Case Style: TSOT-26
Operating Temperature Max: 150°C
Power Dissipation N Channel: 1.1W
Power Dissipation P Channel: 1.1W
Drain Source Voltage Vds N Channel: 30V
Drain Source Voltage Vds P Channel: 30V
Continuous Drain Current Id N Channel: 4.6A
Continuous Drain Current Id P Channel: 4.6A
Drain Source On State Resistance N Channel: 0.05ohm
Drain Source On State Resistance P Channel: 0.095ohm
Delivery and price
Units per pack	5000
Price	0.102 €
Current stock	10+
Lead time	30 days
Datasheet
**DMC3071LVT** ~~a~~ 

**COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|---|
|||||
|**Device**|**BVDSS**|**RDS(ON)**|**ID **<br>**TA = +25°C**|
|N-Channel|30V|50mΩ @ VGS= 10V|4.6A|
|||90mΩ @ VGS= 4.5V|3.4A|
|P-Channel|-30V|95mΩ @ VGS= -10V|-3.3A|
|||140mΩ @ VGS= -4.5V|-2.7A|



## **Features and Benefits** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Mechanical Data** 

- Case: TSOT26 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

## **Applications** 

- Backlighting 

- DC-DC Converters 

   - Terminals Connections: See Diagram 

   - Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e3** 

   - Weight: 0.013 grams (Approximate) 

- Power Management Functions 

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TSOT26<br>G1 1 6 D1<br>S2 2 5 S1<br>G2 3 4 D2<br>Top View  Top View<br>**----- End of picture text -----**<br>


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D1 D2<br>G1 G2<br>S1 S2<br>Q1 N-Channel MOSFET Q2 P-Channel MOSFET<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

||||
|---|---|---|
|**Part Number**|**Case**|**Packaging **|
|DMC3071LVT-7|TSOT26|3000/ Tape &Reel|
|DMC3071LVT-13|TSOT26|10000 /Tape &Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

C71 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: F = 2018) M or M = Month (ex: 9 = September) 

YM = Date Code Marking **C71** Y or Y = Year (ex: F = 2018) M or M = Month (ex: 9 = September) Date Code Key **Year 2017 2018 2019 2020 2021 2022 2023 2024** ~~———————————————~~ **Code** E F G H I J K L **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~ee~~ **Code** 1 2 3 4 5 6 7 8 9 O N D ~~SSS~~ DMC3071LVT 1 of 10 May 2018 Document number: DS40062  Rev. 2 - 2 **www.diodes.com** © Diodes Incorporated 

May 2018 © Diodes Incorporated 

**DMC3071LVT** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|||**Symbol**|**Q1 Value**|**Q2 Value**|**Unit**|
|Drain-Source Voltage|||VDSS|30|-30|V|
|Gate-Source Voltage|||VGSS|±20|±20|V|
|Continuous Drain Current (Note 6) VGS= 10V|Steady<br>State|TA = +25°C<br>TA = +70°C|ID|4.6<br>3.6|-3.3<br>-2.6|A|
|Maximum Continuous BodyDiode Forward Current(Note 6)|||IS|1.5|-1.3|A|
|Pulsed Drain Current(380µs Pulse,DutyCycle = 1%)|||IDM|20|-10|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|TA= +25°C|PD|0.7|W|
|Thermal Resistance, Junction to Ambient(Note 5)|Steady State|RJA|186|°C/W|
|Total Power Dissipation(Note 6)|TA= +25°C|PD|1.1|W|
|Thermal Resistance,Junction to Ambient(Note 6)|Steady State|RJA|117|°C/W|
|Thermal Resistance, Junction to Case||RJC|45||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.) 

||||||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7) **|||||||
|Drain-Source Breakdown Voltage|BVDSS|30|—|—|V|VGS= 0V,ID= 250µA|
|Zero Gate Voltage Drain Current|IDSS|—|—|1.0|µA|VDS= 30V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±100|nA|VGS= ±20V,VDS= 0V|
|**ON CHARACTERISTICS(Note 7) **<br>~~ee~~|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(TH)|1.0|—|2.5|V|VDS= VGS,ID= 250μA|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS(ON)|—|34<br>44|50<br>90|mΩ|VGS= 10V,ID= 3.5A|
|||||||VGS= 4.5V,ID= 2.0A|
|Diode Forward Voltage<br>~~ee~~|VSD|—|0.8|1.0|V|VGS= 0V,IS= 1A|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~ee~~<br>~~———ee~~|||||||
|Input Capacitance<br>~~———~~|Ciss<br>~~ee~~|—<br>~~ee~~|190<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~|VDS= 15V, VGS= 0V<br>f = 1.0MHz|
|Output Capacitance<br>~~———~~|Coss<br>~~ee~~|—<br>~~ee~~|36<br>~~ee~~|—<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~ee~~|—<br>~~ee~~|26<br>~~ee~~|—<br>~~ee~~|||
|Gate Resistance<br>~~———~~<br>~~————~~|Rg<br>~~ee~~|—<br>~~ee~~|4.2<br>~~ee~~|—<br>~~ee~~<br>~~e~~|Ω<br>~~ee~~<br>~~e~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~——— ~~<br>~~————~~|Qg<br> ~~ee~~|—<br>~~ee~~|2.1<br>~~ee~~|—<br>~~ee~~<br>~~e~~|nC<br>~~ee~~<br>~~e~~<br>~~ee~~|VDS= 15V, ID= 4A<br>~~ee~~<br>~~ee~~|
|Total Gate Charge(VGS= 10V)<br>~~————~~|Qg|—|4.5|—<br>~~e~~|||
|Gate-Source Charge<br>~~————~~|Qgs|—|0.5|—<br>~~e~~|||
|Gate-Drain Charge<br>~~————~~<br>~~————~~|Qgd|—|0.8|—<br>~~e~~<br>~~ee~~|||
|Turn-On DelayTime<br>~~————~~<br>~~————~~|tD(ON)|—|1.7|—<br>~~e~~<br>~~ee~~|ns<br>~~e~~<br>~~ee~~<br>~~SEES~~|VDS= 15V, VGS= 10V,<br>RG= 3, ID= 4A<br>~~ee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~————~~<br>~~————~~|tR|—|5.7|—<br>~~e~~<br>~~ee~~|||
|Turn-Off DelayTime<br>~~————~~|tD(OFF)|—|6.0|—<br>~~ee~~|||
|Turn-Off Fall Time<br>~~————~~|tF|—|1.6|—<br>~~ee~~<br>~~SEES~~|||
|Reverse RecoveryTime<br>~~————~~<br>~~ESE~~|tRR<br>~~ESE~~|—<br>~~ESE~~|4.2<br>~~ESE~~|—<br>~~ee~~<br>~~ESE~~<br>~~SEES~~|ns<br>~~ee~~<br>~~ESE~~<br>~~SEES~~|IF= 4A, di/dt = 100A/μs<br>~~ee~~<br>~~ESE~~|
|Reverse RecoveryCharge<br>~~ESE~~|QRR<br>~~ESE~~|—<br>~~ESE~~|0.5<br>~~ESE~~|—<br>~~ESE~~<br>~~SEES~~|nC<br>~~ESE~~<br>~~SEES~~||



- Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 

   6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

   7. Short duration pulse test used to minimize self-heating effect. 

   8. Guaranteed by design. Not subject to production testing. 

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DMC3071LVT Document number: DS40062  Rev. 2 - 2 

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**DMC3071LVT** 

**Electrical Characteristics Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.) 

|**Characteristic**<br>~~es~~|**Symbol**<br>~~es~~|**Min**<br>~~es~~|**Typ **<br>~~es~~|**Max**<br>~~es~~|**Unit**<br>~~es~~|**Test Condition**<br>~~es~~|
|---|---|---|---|---|---|---|
|**OFF CHARACTERISTICS(Note 7) **<br>~~es~~|||||||
|Drain-Source Breakdown Voltage<br>~~es~~|BVDSS<br>~~es~~|-30<br>~~es~~|—<br>~~es~~|—<br>~~es~~|V<br>~~es~~|VGS= 0V,ID= -250µA<br>~~es~~|
|Zero Gate Voltage Drain Current<br>~~a~~|IDSS<br>~~a~~|—<br>~~a~~|—<br>~~a~~|-1.0<br>~~a~~|µA<br>~~a~~|VDS= -30V,VGS= 0V<br>~~a~~|
|Gate-Source Leakage<br>~~a~~|IGSS<br>~~a~~|—<br>~~a~~|—<br>~~a~~|±100<br>~~a~~|nA<br>~~a~~|VGS= ±20V,VDS= 0V<br>~~a~~|
|**ON CHARACTERISTICS(Note 7) **<br>~~(OO(OO~~|||||||
|Gate Threshold Voltage<br>~~I~~|VGS(TH)<br>~~I~~|-1<br>~~I~~|—<br>~~I~~|-2.5<br>~~I~~<br>~~(OO~~|V<br>~~I~~<br>~~(OO~~|VDS= VGS,ID= -250μA<br>~~I~~<br>~~(OO~~|
|Static Drain-Source On-Resistance<br>~~i~~|RDS(ON)<br>~~i~~<br>~~ef~~|—<br>~~i~~<br>~~ef~~|83<br>128<br>~~i~~|95<br>140<br>~~(OO~~<br>~~i~~|mΩ<br>~~(OO ~~<br>~~i~~|VGS= -10V,ID= -3.8A<br> ~~(OO~~<br>~~i~~|
|||||||VGS= -4.5V,ID= -3.0A<br>~~i~~|
|Diode Forward Voltage<br>~~Cf~~|VSD<br>~~Cf~~<br>~~ef~~|—<br>~~Cf~~<br>~~ef~~|-0.8<br>~~Cf~~|-1.2<br>~~Cf~~|V<br>~~Cf~~|VGS= 0V,IS= -1A<br>~~Cf~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~ef~~|||||||
|Input Capacitance<br>~~Ce~~<br>~~ee~~|Ciss<br>~~ee~~|—<br>~~ee~~|254<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~|VDS= -15V, VGS= 0V,<br>f = 1.0MHz<br>~~ee~~|
|Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|—<br>~~ee~~|14<br>~~ee~~|—<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|—<br>~~ee~~|7<br>~~ee~~|—<br>~~ee~~|||
|Gate Resistance<br>~~ee~~<br>~~—————~~|Rg<br>~~ee~~|—<br>~~ee~~|54<br>~~ee~~|—<br>~~ee~~<br>~~e~~|Ω<br>~~ee~~<br>~~e~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~ee~~<br>~~ee~~|
|Total Gate Charge(VGS= -4.5V)<br>~~DD~~<br>~~—————~~|Qg<br>~~DD~~|—<br>~~DD~~|3.1<br>~~DD~~|—<br>~~DD~~<br>~~e~~|nC<br>~~e~~|VDS= -15V, ID= -3.8A<br>~~ee~~|
|Total Gate Charge(VGS= -10V)<br>~~—————~~|Qg|—|6.5|—<br>~~e~~|||
|Gate-Source Charge<br>~~—————~~|Qgs|—|0.8|—<br>~~e~~|||
|Gate-Drain Charge<br>~~—————~~<br>~~ee~~|Qgd<br>~~eee~~|—<br>~~eee~~|1.4<br>~~eee~~|—<br>~~e~~<br>~~eee~~|||
|Turn-On DelayTime<br>~~—————~~<br>~~ee~~|tD(ON)<br>~~eee~~|—<br>~~eee~~|3.5<br>~~eee~~|—<br>~~e~~<br>~~eee~~|ns<br>~~e~~<br>~~eee~~|VGS= -10V, VDS= -15V,<br>RG= 6Ω, RL= 15Ω<br>~~ee~~<br>~~eee~~|
|Turn-On Rise Time<br>~~ee~~|tR<br>~~eee~~|—<br>~~eee~~|6.2<br>~~eee~~|—<br>~~eee~~|||
|Turn-Off DelayTime<br>~~ee~~|tD(OFF)<br>~~eee~~|—<br>~~eee~~|21.8<br>~~eee~~|—<br>~~eee~~|||
|Turn-Off Fall Time<br>~~ee~~<br>~~eee~~|tF<br>~~eee~~<br>~~eee~~|—<br>~~eee~~<br>~~eee~~|13.1<br>~~eee~~<br>~~eee~~|—<br>~~eee~~<br>~~eee~~|||
|Reverse RecoveryTime<br>~~ee ~~<br>~~eee~~<br>~~fe~~|tRR<br> ~~eee~~<br>~~eee~~<br>~~fe~~|—<br>~~eee~~<br>~~eee~~<br>~~le~~|9.6<br>~~eee~~<br>~~eee~~<br>~~le~~|—<br>~~eee~~<br>~~eee~~|ns<br>~~eee~~|IF= -1.0A,di/dt = -100A/μs<br>~~eee~~|
|Reverse RecoveryCharge<br>~~Pr~~<br>~~fe~~|QRR<br>~~Pr~~<br>~~fe~~|—<br>~~Pr~~<br>~~le~~|2.4<br>~~Pr~~<br>~~le~~|—<br>~~Pr~~|nC<br>~~Pr~~|IF= -1.0A,di/dt = -100A/μs<br>~~Pr~~|



Notes: 7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to production testing. 

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DMC3071LVT Document number: DS40062  Rev. 2 - 2 

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**DMC3071LVT** 

## **Typical Characteristics - N-CHANNEL** 

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20.0   10<br> VGS = 4.5V  VDS = 5V<br> VGS = 4.0V  8<br>15.0   KS  VGS = 5.0V  OO<br> VGS = 10V<br> VGS = 3.5V  6<br>10.0<br> VGS = 3.0V<br>4<br>Fa Oo<br>5.0<br> VGS = 2.5V  2  85 ℃<br>150 ℃<br>25 ℃<br> VGS = 2.1V  125 ℃ -55 ℃<br>0.0   [—LU 0  of i Ke<br>0  0.5  1  1.5  2  2.5  3  0  0.5  1  1.5  2  2.5  3  3.5  4<br>VDS, DRAIN-SOURCE VOLTAGE (V)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic  Figure 2. Typical Transfer Characteristic<br>0.08  0.2<br>0.07  0.18  ID = 3.5A<br>0.16  ce<br>0.06<br>0.14<br>0.05   VGS = 4.5V  0.12  2Seman<br>0.04  0.1  PTE T E EE<br>0.08<br>0.03   VGS = 10V  Ht} tt tt<br>0.06  ID = 2.0A<br>0.02<br>0.04<br>0.01<br>0.02<br>A e cree<br>SECRETE<br>0  0<br>0  5  10  15  20  0  2  4  6  8  10  12  14  16  18  20<br>ID, DRAIN-SOURCE CURRENT (A)   VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current  Figure 4. Typical Transfer Characteristic<br>and Gate Voltage<br>0.08  2<br>VGS = 10V<br>0.07   VGS = 10V, ID = 3.5A<br>0.06  150 ℃ 1.5<br>0.05<br>125 ℃<br>0.04  85 ℃ 1<br>e ee  VGS = 4.5V, ID = 2.0A<br>0.03  25 ℃<br>0.02  -55 ℃ 0.5<br>0.01  su scenee T TL<br>0  eepeeeot(tséiCLC 0  CELL ELLE<br>1  2  3  4  5  6  7  8  9  10  -50  -25  0  25  50  75  100  125  150<br>ID, DRAIN CURRENT (A)  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs. Drain Current  Figure 6. On-Resistance Variation with Junction<br>and  Junction Temperature  Temperature<br>, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)  , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON) DS(ON)<br>R R<br>(Ω)<br>(NORMALIZED)<br>,  DRAIN-SOURCE ON-RESISTANCE  , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>**----- End of picture text -----**<br>


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DMC3071LVT Document number: DS40062  Rev. 2 - 2 

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**DMC3071LVT** 

## **Typical Characteristics - N-CHANNEL** (Cont.) 

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0.08  2<br>0.07  TTT. 1.8  TLL<br>1.6  ID = 1mA<br>0.06  '  VGS = 4.5V, ID = 2.0A  4ra 1.4  a S S<br>0.05<br>1.2  ID = 250μA<br>0.04  Pie t 1  PSS<br>0.03  p— ete— r 0.8  AR S<br> VGS = 10V, ID = 3.5A  0.6<br>0.02<br>oo 0.4  ptt ttt tt<br>0.01  P| tT | ty 0.2  FP OP<br>0  Ft it} ttt fy 0  TELE ELEL I<br>-50  -25  0  25  50  75  100  125  150  -50  -25  0  25  50  75  100  125  150<br>TJ, JUNCTION TEMPERATURE ( ℃ )  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Junction  Figure 8. Gate Threshold Variation vs. Junction<br>Temperature  Temperature<br>10  1000<br>VGS = 0V  f = 1MHz<br>8<br>Ciss<br>6  O E ——<br>100   Re<br>4  ff ee<br>Coss<br>au SS<br>2  TJ = 150 [o] C  HK TJ = 85 [o] C  —S<br>TJ = 125 [o] C  TJ = 25 [o] C  Crss<br>TJ = -55 [o] C<br>0  DT LB 10   CE AA<br>0  0.3  0.6  0.9  1.2  1.5  0  5  10  15  20  25  30<br>VSD, SOURCE-DRAIN VOLTAGE (V)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current  Figure 10. Typical Junction Capacitance<br>10  100<br>R<br>DS(ON)<br>9  Limited  PW = 10ms  PW = 1ms<br>8<br>10  PW = 100µs<br>7  A Sec t<br>6<br>5  1<br>PW =<br>4  | [7 [| PE’ A<br>3  ee TJ(Max)=150 SSN ℃<br>0.1  TC = 25 ℃<br>2  w=, VDS = 15V, ID = 4.0A  Single Pulse DUT on 1*MRP  -”ASN PW = 1s<br>1  Board  PW = 10s<br>VGS = 10V DC<br>0  f/ffo[| | | [| 0.01  ASee<br>0  1  2  3  4  5  0.1  1  10  100<br>Qg (nC)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge  Figure 12. SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>GS(TH)<br>DS(ON) V<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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DMC3071LVT Document number: DS40062  Rev. 2 - 2 

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**DMC3071LVT** 

## **Typical Characteristics - P-CHANNEL** 

**==> picture [508 x 660] intentionally omitted <==**

**----- Start of picture text -----**<br>
10.0   10<br>VDS = -5.0V<br> VGS = -4.5V<br>8.0    VGS = -5.0V  8<br>p es  VGS = -4.0V  ( Ae<br>6.0   6<br>he U A<br> VGS = -10V   VGS = -3.5V<br>4.0   4<br>y o — BERBER? ane<br>2.0    VGS = -3.0V  2  TJ = 150 ℃<br>| Z ana TJ = 125 ℃ An TJ = 25 ℃<br> VGS = -2.5V  TJ = 85 ℃ TJ = -55 ℃<br>0.0   | 0  Ff<br>0  0.5  1  1.5  2  2.5  3  0  0.5  1  1.5  2  2.5  3  3.5  4  4.5  5<br>VDS, DRAIN-SOURCE VOLTAGE (V)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 14. Typical Transfer Characteristic<br>Figure 13. Typical Output Characteristic<br>300   500<br>450  Pit | EE EE |<br>250   400  Pit |EE<br>350  Pit |<br>200<br>300  Pit | EE<br>150    VGS = -4.5V  250  Pt | EE<br>200  on We] e ID = -3.8A  et ett yt<br>100<br>150<br>PLATTEy tt<br>50    VGS = -10V  100<br>50  ID = -3.0A<br>HEE EEE<br>0   0<br>0  2  4  6  8  10  0  2  4  6  8  10  12  14  16  18  20<br>ID, DRAIN-SOURCE CURRENT (A)   VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 15. Typical On-Resistance vs. Drain Current  Figure 16. Typical Transfer Characteristic<br>and Gate Voltage<br>200  2<br>180  VGS = -10V<br>1.8<br> VGS = -10V, ID = -3.8A<br>160  TJ = 125 ℃ TJ = 150 ℃ 1.6<br>140  PI S<br>1.4<br>120  re SERRE<br>4<br>100  TJ = 85 ℃ 1.2<br>80<br>60  TJ = 25 ℃ 1   VGS = -4.5V, ID = -3.0A<br>e e t<br>0.8<br>40  TJ = -55 ℃<br>20  o t 0.6  a<br>0  {4 = = 0.4  COE EEE<br>0  2  4  6  8  10  -50  -25  0  25  50  75  100  125  150<br>ID, DRAIN CURRENT (A)  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 17. Typical On-Resistance vs. Drain Current  Figure 18. On-Resistance Variation with<br>and Temperature  Temperature<br>, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) ID<br>(mΩ)  (mΩ)<br>, DRAIN-SOURCE ON-RESISTANCE  , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>(mΩ)<br>(NORMALIZED)<br>,  DRAIN-SOURCE ON-RESISTANCE  , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>DS(ON) R<br>R<br>**----- End of picture text -----**<br>


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DMC3071LVT Document number: DS40062  Rev. 2 - 2 

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**DMC3071LVT** 

## **Typical Characteristics - P-CHANNEL** (Cont.) 

**==> picture [509 x 661] intentionally omitted <==**

**----- Start of picture text -----**<br>
250  2.5<br>200  2<br>Siti<br>ID = -1mA<br>150   VGS = -4.5V, ID = -3.0A  1.5  PR Rs<br>ID = -250μA<br>100  1  i i]<br>PS<br>50   VGS = -10V, ID = -3.8A  0.5<br>0  0<br>-50  -25  0  25  50  75  100  125  150  -50  -25  0  25  50  75  100  125  150<br>TJ, JUNCTION TEMPERATURE ( ℃ )  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 19. On-Resistance Variation with  Figure 20. Gate Threshold Variation vs. Junction<br>Temperature  Temperature<br>10  1000<br>VGS = 0V  f = 1MHz<br>Ciss<br>8<br>ee e / oT<br>100<br>6  i<br>eee [|] ie == ee<br>4  WL TJ = 150 [o] C  NK NO Coss  re<br>Sa<br>TJ = 125 [o] C  10<br>2  TJ = 85 [o] C  Crss<br>min,i] } ————a re<br>TJ = 25 [o] C<br>TJ = -55 [o] C<br>0  STPZZ] /) 1   |>| | | {t ft<br>0  0.3  0.6  0.9  1.2  0  5  10  15  20  25  30<br>VSD, SOURCE-DRAIN VOLTAGE (V)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 21. Diode Forward Voltage vs. Current  Figure 22. Typical Junction Capacitance<br>10  100<br>R<br>Limited DS(ON) PW = 1ms<br>8  an PW = 10ms  AiETT<br>10  PW PW = 100µs<br>6  tS SNS HHH<br>1  2SANSONE<br>4<br>TJ(Max) = 150 ℃ 1 SANNA anil<br>0.1  TC = 25 ℃<br>2  VDS = -15V, ID = -3.8A  Single Pulse  PW = 1s<br>DUT on<br>1*MRP Board  | PW = 10s  NEE<br>VGS = -10V DC<br>0  0.01  ELT mall<br>0  1  2  3  4  5  6  7  0.1  1  10  100<br>Qg (nC)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 23. Gate Charge  Figure 24. SOA, Safe Operation Area<br>(mΩ)<br>, DRAIN-SOURCE ON-RESISTANCE  , GATE THRESHOLD VOLTAGE (V)<br>DS(ON) GS(TH)<br>R V<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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**DMC3071LVT** 

**==> picture [410 x 262] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>e D=0.7  ee<br>D=0.5<br>C e<br>D=0.9<br>D=0.3  RTT eg CHT HII<br>a ie Aaa OE a<br>0.1  ee MTT Naa<br>pe D=0.1  ee oe<br>a ce 7<br>Leet iT =| Ct a<br>E D=0.05  tt TTI THI TCT<br>A IE<br>D=0.02<br>a pr ER EEA TE LL al<br>0.01  ul eeteet TLL EEL ELLEELIE<br>D=0.01<br>PE<br>fmt Tm TT TT<br>D=0.005<br>T HLL [PA] HLETT RθJA(t) = r(t) * RθJA ill<br>ere TT ERIE EE EE TT] RθJA = 165 ℃ /W  Hill<br>D=Single Pulse  Duty Cycle, D = t1 / t2<br>0.001  Peru TE ll<br>1E-06  1E-05  0.0001  0.001  0.01  0.1  1  10  100  1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 25. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMC3071LVT Document number: DS40062  Rev. 2 - 2 

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**DMC3071LVT** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

|||||||||||||||||||||||||**TSOT26**||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||||D<br>e1|||||||||||||~~0~~1(4x)|||||||**TSOT26**|||
|E1<br>E1/2||||||||||||||||E/2|||E||~~0~~<br>L2<br>L<br>c<br>~~ty~~|||||Seating Plane<br>Gauge Plane|**Dim**<br>**A**<br>**A1**<br>**A2**<br>**D**<br>**E**<br>**E1**<br>**b**<br>**c**<br>**e**||**Min**<br>**Max**<br>**Typ**<br><br>1.00<br><br>0.010<br>0.100<br><br>0.840<br>0.900<br><br>2.800<br>3.000<br>2.900<br>2.800BSC<br>1.500<br>1.700<br>1.600<br>0.300<br>0.450<br><br>0.120<br>0.200<br><br>0.950BSC|||
|||||||||e||||b||||||||||~~0~~1(4x)|||||**e1 **<br>**L**||1.900BSC<br>0.30<br>0.50<br>|||
||||||||||||||||||||||A2||||||**L2**||0.250BSC|||
|||||||||||||||||||A1|||||||||**θ**||0°|8°|4°|
||A||||||||||||||||||||||||||**θ1**||4°|12°||
||||||||||||||||||||||Seating Plane||||||**All Dimensions in mm**||**All Dimensions in mm**|||



## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**TSOT26** 

C Y1 ~~ac~~ Y X ~~OOo!~~ 

|**Dimensions Value**|**Dimensions Value(in mm)**|
|---|---|
|**C**|0.950|
|**X**|0.700|
|**Y**|1.000|
|**Y1**|3.199|



9 of 10 **www.diodes.com** 

DMC3071LVT Document number: DS40062  Rev. 2 - 2 

May 2018 © Diodes Incorporated 

**DMC3071LVT** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2018, Diodes Incorporated 

**www.diodes.com** 

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DMC3071LVT Document number: DS40062  Rev. 2 - 2 

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Updated at June 9, 2026
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