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DMC3028LSDXQ-13
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 5.5 A, 5.5 A, 0.027 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: AEC-Q101
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.2W
- Power Dissipation P Channel: 1.2W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 5.5A
- Continuous Drain Current Id P Channel: 5.5A
- Drain Source On State Resistance N Channel: 0.027ohm
- Drain Source On State Resistance P Channel: 0.025ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.213 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**DMC3028LSDXQ**
## Lead-free Green
## **COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET**
## **Product Summary**
|Device<br>V(BR)DSS<br>RDS(ON)max<br>IDmax<br>TA= +25°C<br>Q1<br>30V<br>27mΩ @ VGS= 10V<br>7.2A<br>35mΩ @ VGS= 4.5V<br>6.0A<br>Q2<br>-30V<br>25mΩ @ VGS= -10V<br>-7.6A<br>41mΩ@VGS= -4.5V<br>-6.2A|Device<br>V(BR)DSS<br>RDS(ON)max<br>IDmax<br>TA= +25°C<br>Q1<br>30V<br>27mΩ @ VGS= 10V<br>7.2A<br>35mΩ @ VGS= 4.5V<br>6.0A<br>Q2<br>-30V<br>25mΩ @ VGS= -10V<br>-7.6A<br>41mΩ@VGS= -4.5V<br>-6.2A|Device<br>V(BR)DSS<br>RDS(ON)max<br>IDmax<br>TA= +25°C<br>Q1<br>30V<br>27mΩ @ VGS= 10V<br>7.2A<br>35mΩ @ VGS= 4.5V<br>6.0A<br>Q2<br>-30V<br>25mΩ @ VGS= -10V<br>-7.6A<br>41mΩ@VGS= -4.5V<br>-6.2A|Device<br>V(BR)DSS<br>RDS(ON)max<br>IDmax<br>TA= +25°C<br>Q1<br>30V<br>27mΩ @ VGS= 10V<br>7.2A<br>35mΩ @ VGS= 4.5V<br>6.0A<br>Q2<br>-30V<br>25mΩ @ VGS= -10V<br>-7.6A<br>41mΩ@VGS= -4.5V<br>-6.2A|
|---|---|---|---|
|Device|V(BR)DSS|RDS(ON)max|IDmax<br>TA= +25°C|
|Q1|30V|27mΩ @ VGS= 10V|7.2A|
|||35mΩ @ VGS= 4.5V|6.0A|
|Q2|-30V|25mΩ @ VGS= -10V|-7.6A|
|||41mΩ@VGS= -4.5V|-6.2A|
## **Features and Benefits**
- Low Input Capacitance
- Low On-Resistance
- Fast Switching Speed
- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)**
- **Halogen and Antimony Free. “Green” Device (Note 3)**
- **Qualified to AEC-Q101 Standards for High Reliability**
- **PPAP Capable (Note 4)**
## **Description**
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
## **Mechanical Data**
- Case: SO-8
- Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
## **Applications**
- DC-DC Converters
- Power Management Functions
- Backlighting
- Terminal Connections: See Diagram
- Terminals: Finish – Tin Finish Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 © **e3**
- Weight: 0.074 grams (Approximate)
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SO-8 S1 ma TT] D1<br>G1 D1<br>S2 D2<br>Lt | TT]<br>‘ G2 Yt TL] D2<br>Top View Top View<br>Pin Configuration<br>**----- End of picture text -----**<br>
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Equivalent Circuit<br>**----- End of picture text -----**<br>
## **Ordering Information** (Note 5)
|**Ordering Informationg Information Information** (Note 5)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMC3028LSDXQ-13|SO-8|2,500/Tape &Reel|
- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
## **Marking Information**
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SO-8<br>8 5<br>at<br>3028SDX<br>YY WW<br>TP 1 LILI 4<br>**----- End of picture text -----**<br>
> = Manufacturer’s Marking oT 3028SDX = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 13 = 2013) WW = Week (01 - 53)
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DMC3028LSDXQ Document number: DS37963 Rev. 1 - 2
May 2015 © Diodes Incorporated
**DMC3028LSDXQ**
## **Maximum Ratings – Q1 and Q2** (@TA = +25°C, unless otherwise specified.)
|**Maximum Ratingsgss** **– Q1 and Q2** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **– Q1 and Q2** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **– Q1 and Q2** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Q1 **|**Q2 **|**Units**|
|Drain-Source Voltage|||VDSS|30|-30|V|
|Gate-Source Voltage|||VGSS|±20|±20|V|
|Continuous Drain Current (Note 6) VGS=10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|5.5<br>4.1|-5.8<br>-4.3|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|7.2<br>5.7|-7.6<br>-6.1|A|
|Maximum BodyDiode Forward Current(Note 6)|||IS|2.2|-2.2|A|
|Pulsed Drain Current(10µspulse,dutycycle = 1%)|||IDM|40|-30|A|
**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)
|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation (Note 6)|TA= +25°C|PD|1.2|W|
||TA= +70°C||0.75||
|Thermal Resistance, Junction to Ambient (Note 6)|SteadyState|RθJA|108|°C/W|
||t<10s||65||
|Total Power Dissipation (Note 7)|TA= +25°C|PD|1.5|W|
||TA= +70°C||0.95||
|Thermal Resistance, Junction to Ambient (Note 7)|Steady State|RΘJA|85|°C/W|
||t<10s||50||
|Thermal Resistance,Junction to Case(Note 7)||RΘJC|14.5||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|
## **Electrical Characteristics – Q1** (@TA = +25°C, unless otherwise specified.)
|**Electrical Characteristics** **– Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **– Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **– Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **– Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **– Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **– Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **– Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 8)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|30|||V|VGS= 0V,ID= 250µA|
|Zero Gate Voltage Drain Current|IDSS|||1|µA|VDS= 24V,VGS= 0V|
|Gate-Source Leakage|IGSS|||100|nA|VGS=20V,VDS= 0V|
|**ON CHARACTERISTICS(Note 8)**|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(th)<br>~~ee~~|1<br>~~ee~~|<br>~~ee~~|3<br>~~ee~~|V<br>~~ee~~|VDS= VGS,ID= 250µA<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS (ON)<br>~~ee~~|<br>~~ee~~|19<br>~~ee~~|27<br>~~ee~~|m<br>~~ee~~|VGS= 10V,ID= 6A<br>~~ee~~|
|||<br>~~ee~~|22<br>~~ee~~|35<br>~~ee~~||VGS= 4.5V,ID= 5A<br>~~ee~~|
|Diode Forward Voltage<br>~~ee~~|VSD<br>~~ee~~|<br>~~ee~~|0.7<br>~~ee~~|1.2<br>~~ee~~|V<br>~~ee~~|VGS= 0V,IS= 1.3A<br>~~ee~~|
|**DYNAMIC CHARACTERISTICS(Note 9)**|||||||
|Input Capacitance<br>~~ee~~|Ciss<br>~~ee~~|<br>~~ee~~|641<br>~~ee~~|<br>~~ee~~|pF<br> ~~ee~~|VDS= 15V, VGS= 0V<br>f = 1.0MHz<br>~~ee~~|
|Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|<br>~~ee~~|66<br>~~ee~~|<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|<br>~~ee~~|51<br>~~ee~~|<br>~~ee ~~|||
|Gate Resistance|RG||2.2|||VDS= 0V,VGS= 0V,f = 1.0MHz|
|Total Gate Charge(VGS= 4.5V)|Qg||6||nC<br>~~ee~~|VDS= 15V, ID= 10A<br>~~ee~~|
|Total Gate Charge(VGS= 10V)|Qg||13.2||||
|Gate-Source Charge|Qgs||1.7||||
|Gate-Drain Charge<br>~~———~~|Qgd||2.2|<br>~~ee~~|||
|Turn-On DelayTime<br>~~———~~|tD(on)||3.3|<br>~~ee~~|nS<br>~~ee~~|VGS= 10V, VDD= 15V, RG= 6,<br>ID= 1A<br>~~ee~~|
|Turn-On Rise Time<br>~~———~~|tr||4.4|<br>~~ee~~|||
|Turn-Off DelayTime<br>~~———~~|tD(off)||22.3|<br>~~ee~~|||
|Turn-Off Fall Time<br>~~———~~|tf||5.3|<br>~~ee~~|||
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DMC3028LSDXQ Document number: DS37963 Rev. 1 - 2
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**DMC3028LSDXQ**
**Electrical Characteristics – Q2** (@TA = +25°C, unless otherwise specified.)
|**Electrical Characteristics** **– Q2** (@TA = +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~es~~|**Symbol**<br>~~es~~|**Min**<br>~~es~~|**Typ**<br>~~es~~|**Max**<br>~~es~~|**Unit**<br>~~es~~|**Test Condition**<br>~~es~~|
|**OFF CHARACTERISTICS(Note 8)**<br>~~es~~|||||||
|Drain-Source Breakdown Voltage<br>~~es~~|BVDSS<br>~~es~~<br>~~ee~~|-30<br>~~es~~|<br>~~es~~|<br>~~es~~|V<br>~~es~~|VGS= 0V,ID= -250µA<br>~~es~~|
|Zero Gate Voltage Drain Current<br>~~a~~|IDSS<br>~~a~~<br>~~ee~~|<br>~~a~~|<br>~~a~~|-1<br>~~a~~|µA<br>~~a~~|VDS= -24V,VGS= 0V<br>~~a~~|
|Gate-Source Leakage<br>~~a~~|IGSS<br>~~a~~<br>~~ee~~|<br>~~a~~|<br>~~a~~|100<br>~~a~~|nA<br>~~a~~|VGS=20V,VDS= 0V<br>~~a~~|
|**ON CHARACTERISTICS(Note 8)**<br>~~ee~~|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(th)<br>~~ee~~|-1<br>~~ee~~<br>~~——————~~|<br>~~ee~~<br>~~——————~~|-3<br>~~ee~~<br>~~——————~~|V<br>~~ee~~<br>~~—~~|VDS= VGS,ID= -250µA<br>~~ee~~<br>~~—~~|
|Static Drain-Source On-Resistance|RDS (ON)<br>~~RD~~|<br>~~——————~~|21<br>~~——————~~|25<br>~~——————~~|mΩ<br>~~—~~<br>~~(I~~|VGS= -10V,ID= -6A<br>~~—~~|
|||<br>~~——————~~<br>~~I~~|29<br>~~——————~~<br>~~(RD~~|41<br>~~——————~~<br>~~(OO~~||VGS= -4.5V,ID= -5A<br>~~—~~<br>~~(O~~|
|Diode Forward Voltage<br>~~Tn~~|VSD<br>~~Tn~~<br>~~RD~~|<br>~~——————~~<br>~~Tn~~<br>~~I~~|-0.7<br>~~——————~~<br>~~Tn~~<br>~~(RD~~|-1.2<br>~~——————~~<br>~~Tn~~<br>~~(OO~~|V<br>~~—~~<br>~~Tn~~<br>~~(I~~|VGS= 0V,IS= -1.3A<br>~~—~~<br>~~Tn~~<br>~~(O~~|
|**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~RD I (RD(OO~~<br>~~(I(O~~|||||||
|Input Capacitance<br>~~Pe~~<br>~~ee~~|Ciss<br>~~ee~~|<br>~~ee~~|1241<br>~~ee~~|<br>~~ee~~|pF<br>~~ee~~|VDS= -15V, VGS= 0V<br>f = 1.0MHz<br>~~ee~~|
|Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|<br>~~ee~~|146<br>~~ee~~|<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|<br>~~ee~~|110<br>~~ee~~|<br>~~ee~~|||
|Gate Resistance<br>~~ee~~<br>~~a————~~|RG<br>~~ee~~|<br>~~ee~~|14.8<br>~~ee~~|<br>~~ee~~<br>~~e~~|Ω<br>~~ee~~<br>~~e~~|VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~ee~~<br>~~ee~~|
|Total Gate Charge(VGS= -4.5V)<br>~~a————~~|Qg||10.9|<br>~~e~~|nC<br>~~e~~<br>~~ee~~|VDS= -15V, ID= -7A<br>~~ee~~<br>~~ee~~|
|Total Gate Charge(VGS= -10V)<br>~~a————~~|Qg||22|<br>~~e~~|||
|Gate-Source Charge<br>~~————~~|Qgs||3.5|<br>~~e~~|||
|Gate-Drain Charge<br>~~————~~<br>~~Pe————~~|Qgd||4.7|<br>~~e~~<br>~~ee~~|||
|Turn-On DelayTime<br>~~————~~<br>~~Pe————~~|tD(on)||9.7|<br>~~e~~<br>~~ee~~|nS<br>~~e~~<br>~~ee~~|VGS= -10V, VDD= -15V, RGEN= 6Ω,<br>ID= -7A<br>~~ee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~Pe————~~|tr||17.1|<br>~~ee~~|||
|Turn-Off DelayTime<br>~~————~~|tD(off)||60.5|<br>~~ee~~|||
|Turn-Off Fall Time<br>~~————~~|tf||40.4|<br>~~ee~~|||
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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DMC3028LSDXQ Document number: DS37963 Rev. 1 - 2
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**DMC3028LSDXQ**
## **N-Channel – Q1**
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30.0 30<br>VGS = 10V<br>VGS = 3.5V VDS = 5V<br>25.0 i.) ae 25 LEE<br>VGS = 5.0V VGS = 4.0V<br>20.0 20<br>SS VGS = 4.5V VGS = 3.0V BRE<br>15.0 15 VGS = 150°C<br>fm OO<br>10.0 10 VGS = 125°C<br>a oo VGS = 25°C<br>VGS = 85°C<br>5.0 5<br>|A VGS = 2.5V eee) ane<br>VGS = -55°C<br>0.0 -—_ 0 LD<br>0 0.5 1 1.5 2 0 0.5 1 1.5 2 2.5 3 3.5 4<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristic<br>Figure 2 Typical Transfer Characteristic<br>0.05 0.05<br>VGS = 4.5V<br>0.045 PF | | [| Jf [ 0.045 ee<br>0.04 0.04<br>TA = 150°C<br>0.035 SESS 0.035 ee ee eee T A = 125°C<br>0.03 a 0.03 eo T A = 85°C<br>0.025 PF [| | | [| fy 0.025 ——_<br>0.02 i VGS = 4.5V 0.02 PF | | fT TA = 25°C<br>0.015 SSS 0.015 i T A = -55°C<br>VGS = 10V<br>0.01 0.01<br>0.005 SSP 0.005 GEE<br>0.00 Ft Ff tf ff 0 | | | | | ff<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT(A)<br>Figure 3 Typical On-Resistance vs. Figure 4 Typical On-Resistance vs.<br>Drain Current and Gate Voltage Drain Current and Temperature<br>1.8 0.04<br>0.035<br>1.6 TL ELELEY PTET LLL<br>VGS = 4.5V<br>ID = 5A 0.03 VGS = 4.5V<br>1.4 ID = 5A<br>oe 0.025 ERECT<br>VGS = 10V<br>ID = 10A VGS = 10V<br>1.2 0.02 ID = 10A<br>fo 0.015 BEEP ozee<br>1<br>AT oan<br>0.01<br>0.8<br>Deere) 0.005 eect<br>0.6 ALE 0 ELLE<br>-50 -25 0 25 50 75 100 125 150<br>-50 -25 0 25 50 75 100 125 150<br>Figure 5 On-Resistance Variation with TemperatureTA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)<br>Figure 6 On-Resistance Variation with Temperature<br>D<br>, DRAIN CURRENT (A)<br>I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>
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**www.diodes.com**
**DMC3028LSDXQ**
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3 30<br>2.5 25<br>2 20<br>ID = 1mA TA = 25°C<br>1.5 sett 15 Cee<br>ID = 250µA<br>SSS<br>1 10<br>0.5 5<br>Coo) = EEE<br>0 0<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1 1.2<br>TA, AMBIENT TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 7 Gate Threshold Variation vs. Ambient Temperature Figure 8 Diode Forward Voltage vs. Current<br>10000 10000<br>f = 1MHz<br>T A = 150°C<br>1000 SSS Peas<br>T A = 125°C 1000 Ciss<br>100<br>SS=== SSSee<br>10 eee TA = 85°C .<br>—— ee eae aae ee<br>100 Coss<br>———=S= TA = 25°C KSSERER2EE<br>1 = ======5——— C rss<br>——_—_——_—_——_— a<br>0.1 10<br>0 ee 10 20 30 PT TT EEE ET<br>0 2 4 6 8 10 12 14 16 18 20<br>Figure 9 Typical Drain-Source Leakage Current vs. Voltage VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 10 Typical Junction Capacitance<br>, GATE THRESHOLD VOLTAGE<br>GS(TH)<br>V<br>, SOURCE CURRENT (A)<br>IS<br>, DRAIN LEAKAGE CURRENT (nA)<br>IDSS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>
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10<br>8<br>VDS =15<br>ID = 10A<br>6<br>4<br>2<br>0<br>0 2 4 6 8 10 12 14<br>Qg, TOTAL GATE CHARGE (nC)<br>Figure 11 Gate-Source Voltage vs. Total Gate Charge<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>
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DMC3028LSDXQ Document number: DS37963 Rev. 1 - 2
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**DMC3028LSDXQ**
**P-Channel – Q2**
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20 VGS = -10V 20<br>VDS = -5.0V<br>15 VGS = -5.0V 15<br>(Annie VGS = -4.5V<br>VGS = -4.0V<br>10 V GS = -3.5V 10<br>ee<br>VGS = -3.0V<br>5 {oo 5 ff TA = 125TA = 150C C TA = 85C<br>TA = 25C<br>0 Ae VGS = -2.5V 0 ae TA = -55C<br>0 1 2 3 4 5 0 1 2 3 4 5<br>-VDS, DRAIN -SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>0.05 0.30<br>ID = -7.0A<br>0.25<br>0.04 ID = -6.2A<br>0.20<br>0.03<br>VGS = -4.5V<br>0.15<br>0.02<br>VGS = -10V 0.10<br>0.01<br>0.05<br>0 0<br>0 5 10 15 20 25 30 0 5 10 15 20<br>-ID, DRAIN SOURCE CURRENT (A) -VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs. Figure 4 Typical Drain-Source On-Resistance<br>Drain Current and Gate Voltage vs. Gate-Source Voltage<br>0.05 1.8<br>VGS = -4.5V TA = 150C<br>0.04 TA = 125C 1.6 V IDGS = -10A = -10V<br>TA = 85C 1.4<br>0.03<br>TA = 25C VGS = -5.0V<br>1.2 ID = -5.0A<br>0.02 T A = -55C<br>1.0<br>0.01<br>0.8<br>0 CCC 0.6 RCC:<br>0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 150<br>-ID, DRAIN SOURCE CURRENT (A) TJ, JUNCTION TEMPERATURE (C)<br>Figure 5 Typical On-Resistance vs. Figure 6 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>-I<br>D<br>, DRAIN CURRENT (A)<br>-I<br>D<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>**----- End of picture text -----**<br>
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0.05 3.0<br>2.5<br>0.04 THT)» Ee<br>VGS = -5.0V<br>ID -5.0= A 2.0<br>0.03 -ID = 1mA<br>CAT 1.5 ARSE -I D = 250µA<br>0.02 V GS = -10V<br>ID -10= A 1.0<br>0.01<br>0.5<br>0 0<br>-50 PEEEEEEN) -25 0 25 50 75 100 125 150 = EEE -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TA, AMBIENT TEMPERATURE (°C)<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Ambient Temperature<br>20<br>15<br>Tr<br>10 TL<br>TA= 150C<br>TA= 125C<br>5 TA= 85 C<br>TA= 25C<br>TA= -55C<br>0 aie oa a<br>0 0.2 0.4 0.6 0.8 1.0 1.2<br>-VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>GS(TH)<br>, SOURCE CURRENT (A)<br>S<br>-I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(on)<br>**----- End of picture text -----**<br>
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© Diodes Incorporated
**DMC3028LSDXQ**
## **Package Outline Dimensions**
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
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SO-8<br>Dim Min Max<br>A - 1.75<br>E1 E A1 0.10 0.20<br>Gauge Plane<br>A1 Seating Plane A2 1.30 1.50<br>L A3 0.15 0.25<br>Detail ‘A’ b 0.3 0.5<br>D 4.85 4.95<br>__|) Pe E 5.90 6.10<br>h 45° 7°~9° E1 3.85 3.95<br>e 1.27 Typ<br>A2 A A3 Detail ‘A’ h - 0.35<br>L 0.62 0.82<br>e b Θ 0 8<br>D All Dimensions in mm<br>sa<br>0.254<br>**----- End of picture text -----**<br>
## **Suggested Pad Layout**
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X ~~THe~~ C1 ~~|~~ C2 Y ~~Whad~~
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Dimensions Value (in mm)<br>X 0.60<br>Y 1.55<br>C1 5.4<br>C2 1.27<br>**----- End of picture text -----**<br>
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## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT**
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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Updated at June 9, 2026
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