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DMC3028LSDX-13
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 5.5 A, 5.5 A, 0.027 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.2W
- Power Dissipation P Channel: 1.2W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 5.5A
- Continuous Drain Current Id P Channel: 5.5A
- Drain Source On State Resistance N Channel: 0.027ohm
- Drain Source On State Resistance P Channel: 0.025ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.213 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**DMC3028LSDX COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET** | ## **Product Summary** |**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**| |---|---|---|---| |**Device**<br>**V(BR)DSS**<br>**RDS(ON) max**<br>**ID max**<br>**TA = +25°C**<br>Q1<br>30V<br>27mΩ @ VGS= 10V<br>7.2A<br>35mΩ @ VGS= 4.5V<br>6.0A<br>Q2<br>-30V<br>25mΩ @ VGS= -10V<br>-7.6A<br>41mΩ@VGS= -4.5V<br>-6.2A|||| |**Device**|**V(BR)DSS**|**RDS(ON) max**|**ID max**<br>**TA = +25°C**| |Q1|30V|27mΩ @ VGS= 10V|7.2A| |||35mΩ @ VGS= 4.5V|6.0A| |Q2|-30V|25mΩ @ VGS= -10V|-7.6A| |||41mΩ@VGS= -4.5V|-6.2A| ## **Description** This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. ## **Features and Benefits** - Low Input Capacitance - Low On-Resistance - Fast Switching Speed - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** - **Halogen and Antimony Free. “Green” Device (Note 3)** **Qualified to AEC-Q101 Standards for High Reliability** - **An Automotive-Compliant Part is Available Under Separate Datasheet (DMC3028LSDXQ)** ## **Mechanical Data** - Case: SO-8 - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 ## **Applications** - DC-DC Converters - Power Management Functions - Terminal Connections: See Diagram - Terminals: Finish – Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 O **e3** - Weight: 0.074 grams (Approximate) - Backlighting **==> picture [466 x 134] intentionally omitted <==** **----- Start of picture text -----**<br> D1 D2<br>S1 mn Lt| D1<br>— G1 co To D1<br>G1 G2<br>S2 oT om D2<br>.<br>< G2 mn Li| D2 S1 S2<br>Equivalent Circuit<br>Top View Top View<br>Pin Configuration Q N-Channel MOSFET Q2 P-Channel MOSFET<br>**----- End of picture text -----**<br> ## **Ordering Information** (Note 4) |**Part Number**|**Case**|**Packaging**| |---|---|---| |DMC3028LSDX-13|SO-8|2,500/Tape &Reel| - Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. ## **Marking Information** **==> picture [209 x 126] intentionally omitted <==** **----- Start of picture text -----**<br> Top View<br>8 5<br>onan<br>Logo<br>3028SDX Part no.<br>YY WW<br>Xth week: 01 ~ 53<br>Year: “11” = 2011<br>1 4<br>Too<br>**----- End of picture text -----**<br> 1 of 9 **www.diodes.com** DMC3028LSDX Document number: DS36210 Rev. 4 - 2 November 2015 © Diodes Incorporated **DMC3028LSDX** ## **Maximum Ratings – Q1 and Q2** (@TA = +25°C, unless otherwise specified.) ||**Characteristic**<br>**Symbol**||**Q1 **<br>**Q2 **<br>**Units**| |---|---|---|---| |**Thermal Characteristics**|**Thermal Characteristics **(@TA= +25°C, unless otherwise specified.)<br>**Characteristic**<br>**Symbol**<br>**Value**<br>**Units**<br>Total Power Dissipation (Note 5)<br>TA= +25°C<br>PD<br>1.2<br>W<br>TA= +70°C<br>0.75<br>Thermal Resistance, Junction to Ambient (Note 5)<br>Steady state<br>RθJA<br>108<br>°C/W<br>t<10s<br>65<br>Total Power Dissipation (Note 6)<br>TA= +25°C<br>PD<br>1.5<br>W<br>TA= +70°C<br>0.95<br>Drain-Source Voltage<br>VDSS<br>30<br>-30<br>V<br>Gate-Source Voltage<br>VGSS<br>±20<br>±20<br>V<br>Continuous Drain Current (Note 5) VGS=10V<br>Steady<br>State<br>TA= +25°C<br>TA= +70°C<br>ID<br>5.5<br>4.1<br>-5.8<br>-4.3<br>A<br>t<10s<br>TA= +25°C<br>TA= +70°C<br>ID<br>7.2<br>5.7<br>-7.6<br>-6.1<br>A<br>Maximum BodyDiode Forward Current(Note 5)<br>IS<br>2.2<br>-2.2<br>A<br>Pulsed Drain Current(10µspulse,dutycycle = 1%)<br>IDM<br>40<br>-30<br>A<br>Avalanche Current(Note 7)L = 0.1mH<br>IAS<br>14.5<br>-22<br>A<br>Avalanche Energy (Note 7)L = 0.1mH<br>EAS<br>10.5<br>25<br>mJ<br>~~rra~~<br>~~er~~||| ||Thermal Resistance, Junction to Ambient (Note 6)<br>Steady state<br>t<10s||RθJA<br>85<br>°C/W<br>50| ||Thermal Resistance,Junction to Case(Note 6)||RθJC<br>14.5| ||Operatingand Storage Temperature Range||TJ,TSTG<br>-55 to +150<br>°C| ||||| |**Electrical Characteristics**|**Electrical Characteristics** **– Q1** (@TA= +25°C, unless otherwise specified.)||| ||||| ||**Characteristic**<br>**Symbol**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>**Test Condition**<br>**OFF CHARACTERISTICS(Note 8)**<br>Drain-Source Breakdown Voltage<br>BVDSS<br>30<br><br><br>V<br>VGS= 0V,ID= 250µA<br>Zero Gate Voltage Drain Current<br>IDSS<br><br><br>1<br>µA<br>VDS= 24V,VGS= 0V<br>~~—S—S~~||| ||Gate-Source Leakage<br>IGSS<br><br><br>100||100<br>nA<br>VGS=20V,VDS= 0V| ||**ON CHARACTERISTICS(Note 8)**||| ||Gate Threshold Voltage<br>VGS(th)<br>1<br><br>3<br>Static Drain-Source On-Resistance<br>RDS (ON)<br><br>19<br>27<br><br>22<br>35<br>Diode Forward Voltage<br>VSD<br><br>0.7<br>1.2<br>~~OE~~||V<br>VDS= VGS,ID= 250µA<br>mΩ<br>VGS= 10V,ID= 6A<br>VGS= 4.5V,ID= 5A<br>V<br>VGS= 0V,IS= 1.3A| ||**DYNAMIC CHARACTERISTICS(Note 9)**||| ||Input Capacitance<br>Ciss<br><br>641<br><br>pF<br>VDS= 15V, VGS= 0V<br>f = 1.0MHz<br>Output Capacitance<br>Coss<br><br>66<br><br>Reverse Transfer Capacitance<br>Crss<br><br>51<br><br>Gate Resistance<br>RG<br><br>2.2<br><br><br>VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~————~~<br>~~eee A~~||| |Total Gate Charge(VGS= 4.5V)<br>Qg<br><br>6<br><br>Total Gate Charge(VGS= 10V)<br>Qg<br><br>13.2<br><br>Gate-Source Charge<br>Qgs<br><br>1.7<br><br>Gate-Drain Charge<br>Qgd<br><br>2.2<br><br>Turn-On DelayTime<br>tD(on)<br><br>3.3<br><br>Turn-On Rise Time<br>tr<br><br>4.4<br><br>Turn-Off DelayTime<br>tD(off)<br><br>22.3<br><br>Turn-Off Fall Time<br>tf<br><br>5.3<br><br>~~—<—~~<br>~~————~~|||nC<br>VDS= 15V, ID= 10A<br>nS<br>VGS= 10V, VDD= 15V, RG= 6,<br>ID= 1A<br>~~ee~~<br>~~ee~~| ## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) **Electrical Characteristics – Q1** (@TA = +25°C, unless otherwise specified.) 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 9 **www.diodes.com** DMC3028LSDX Document number: DS36210 Rev. 4 - 2 November 2015 © Diodes Incorporated **DMC3028LSDX** **Electrical Characteristics – Q2** (@TA = +25°C, unless otherwise specified.) |**Electrical Characteristics** **– Q2** (@TA = +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||| |---|---|---|---|---|---|---| |**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~|**Min**<br>~~ee~~|**Typ**<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|**Test Condition**<br>~~ee~~| |**OFF CHARACTERISTICS(Note 8)**<br>~~ee~~||||||| |Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~<br>~~ee~~|-30<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|<br>~~ee~~|V<br>~~ee~~|VGS= 0V,ID= -250µA<br>~~ee~~| |Zero Gate Voltage Drain Current<br>~~a~~|IDSS<br>~~a~~<br>~~ee~~|<br>~~a~~<br>~~ee~~|<br>~~a~~<br>~~ee~~|-1<br>~~a~~|µA<br>~~a~~|VDS= -24V,VGS= 0V<br>~~a~~| |Gate-Source Leakage<br>~~a~~|IGSS<br>~~a~~<br>~~ee~~|<br>~~a~~<br>~~ee~~|<br>~~a~~<br>~~ee~~|100<br>~~a~~|nA<br>~~a~~|VGS=20V,VDS= 0V<br>~~a~~| |**ON CHARACTERISTICS(Note 8)**<br>~~ee ee~~||||||| |Gate Threshold Voltage<br>~~Ce~~|VGS(th)<br>~~Ce~~|-1<br>~~Ce~~|<br>~~Ce~~|-3<br>~~Ce~~|V<br>~~Ce~~|VDS= VGS,ID= -250µA<br>~~Ce~~| |Static Drain-Source On-Resistance<br>~~nn~~|RDS (ON)<br>~~nn~~|<br>~~nn~~|21<br>~~nn~~|25<br>~~nn~~|mΩ<br>~~nn~~<br>~~(I~~|VGS= -10V,ID= -6A<br>~~nn~~| |||<br>~~nn~~<br>~~I~~|29<br>~~nn~~<br>~~(RUD~~|41<br>~~nn~~<br>~~(OO~~||VGS= -4.5V,ID= -5A<br>~~nn~~<br>~~(O~~| |Diode Forward Voltage<br>~~ID~~|VSD<br>~~ID~~|<br>~~ID~~<br>~~I~~|-0.7<br>~~ID~~<br>~~(RUD~~|-1.2<br>~~ID~~<br>~~(OO~~|V<br>~~ID~~<br>~~(I~~|VGS= 0V,IS= -1.3A<br>~~ID~~<br>~~(O~~| |**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~I (RUD (OO~~<br>~~(I(O~~||||||| |Input Capacitance<br>~~Pe~~<br>~~ee~~|Ciss<br>~~ee~~|<br>~~ee~~|1,241<br>~~ee~~|<br>~~ee~~|pF<br>~~ee~~|VDS= -15V, VGS= 0V<br>f = 1.0MHz<br>~~ee~~| |Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|<br>~~ee~~|146<br>~~ee~~|<br>~~ee~~||| |Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|<br>~~ee~~|110<br>~~ee~~|<br>~~ee~~||| |Gate Resistance<br>~~ee~~<br>~~————~~|RG<br>~~ee~~|<br>~~ee~~|14.8<br>~~ee~~|<br>~~ee~~<br>~~e~~|Ω<br>~~ee~~<br>~~e~~|VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~ee~~<br>~~ee~~| |Total Gate Charge(VGS= -4.5V)<br>~~I~~<br>~~————~~|Qg<br>~~I~~|<br>~~I~~|10.9<br>~~I~~|<br>~~I~~<br>~~e~~|nC<br>~~e~~<br>~~ee~~|VDS= -15V, ID= -7A<br>~~ee~~<br>~~ee~~| |Total Gate Charge(VGS= -10V)<br>~~————~~|Qg||22|<br>~~e~~||| |Gate-Source Charge<br>~~————~~|Qgs||3.5|<br>~~e~~||| |Gate-Drain Charge<br>~~————~~<br>~~CC————~~|Qgd||4.7|<br>~~e~~<br>~~ee~~||| |Turn-On DelayTime<br>~~————~~<br>~~CC————~~|tD(on)||9.7|<br>~~e~~<br>~~ee~~|nS<br>~~e~~<br>~~ee~~|VGS= -10V, VDD= -15V, RGEN= 6Ω,<br>ID= -7A<br>~~ee~~<br>~~ee~~| |Turn-On Rise Time<br>~~CC————~~|tr||17.1|<br>~~ee~~||| |Turn-Off DelayTime<br>~~————~~|tD(off)||60.5|<br>~~ee~~||| |Turn-Off Fall Time<br>~~————~~|tf||40.4|<br>~~ee~~||| Notes: 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 3 of 9 **www.diodes.com** DMC3028LSDX Document number: DS36210 Rev. 4 - 2 November 2015 © Diodes Incorporated **DMC3028LSDX** ## **N-Channel – Q1** **==> picture [477 x 671] intentionally omitted <==** **----- Start of picture text -----**<br> 30.0 30<br>VGS = 10V<br>VGS = 3.5V VDS = 5V<br>25.0 i/o 25 ott<br>VGS = 5.0V VGS = 4.0V<br>20.0 20<br>a VGS = 4.5V VGS = 3.0V BREE<br>15.0 15 VGS = 150°C<br>7 ae<br>aa fe<br>10.0 10 VGS = 125°C<br>Yo oe co VGS = 25°C<br>VGS = 85°C<br>5.0 5<br>|Ze VGS = 2.5V eee) ee VGS = -55°C<br>0.0 nn 0 LD<br>0 0.5 1 1.5 2 0 0.5 1 1.5 2 2.5 3 3.5 4<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristic<br>Figure 2 Typical Transfer Characteristic<br>0.05 0.05<br>VGS = 4.5V<br>0.045 0.045<br>P| | | | Po<br>0.04 0.04<br>TA = 150°C<br>0.035 0.035 T A = 125°C<br>os een<br>0.03 0.03 T A = 85°C<br>ee Et er<br>0.025 0.025<br>Pot | tl _<br>0.02 pot | VGS = 4.5V 0.02 po} | TA = 25°C<br>0.015 0.015 T A = -55°C<br>VGS = 10V<br>SSE —j ff|<br>0.01 0.01<br>0.005 SEPP 0.005 GRRE<br>0.00 0<br>0 | ot 5 10 | 15 | hE 20 25 30 0 | | 5 10 | | 15 20 25 30<br>ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT(A)<br>Figure 3 Typical On-Resistance vs. Figure 4 Typical On-Resistance vs.<br>Drain Current and Gate Voltage Drain Current and Temperature<br>1.8 0.04<br>0.035<br>1.6 LIL ELEY TTT<br>VGS = 4.5V<br>ID = 5A 0.03 VGS = 4.5V<br>cepa) Ty ID = 5A Ty<br>1.4<br>0.025<br>VGS = 10V<br>ID = 10A VGS = 10V<br>1.2 0.02 ID = 10A<br>fooa = 0.015 EECnee ae<br>1<br>0.01<br>0.8<br>Set 0.005 Be-laene<br>0.6 4nRRRREe 0 Ree<br>-50 -25 0 25 50 75 100 125 150 -50 COPE -25 0 25 Err 50 75 100 125 150<br>Figure 5 On-Resistance Variation with TemperatureTA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)<br>Figure 6 On-Resistance Variation with Temperature<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>ID<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>ID<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> 4 of 9 DMC3028LSDX Document number: DS36210 Rev. 4 - 2 November 2015 © Diodes Incorporated **www.diodes.com** **DMC3028LSDX** | ## row.' Nn c o R P o R A OT = D **==> picture [490 x 665] intentionally omitted <==** **----- Start of picture text -----**<br> 3 30<br>2.5 25<br>2 — ID = 1mA 20 TA = 25°C<br>1.5 > 15<br>ID = 250µA<br>LCS |<br>1 10 |<br>0.5 5<br>0 0<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1 1.2<br>TA, AMBIENT TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 7 Gate Threshold Variation vs. Ambient Temperature Figure 8 Diode Forward Voltage vs. Current<br>10000 10000<br>f = 1MHz<br>ee T A = 150°C ee SS SSS = SS<br>1000 SoSSS SSS aa eeee eeee<br>T A = 125°C — ——— 1000 SS | Ciss es<br>100 _—— T_T ——— ee |<br>—— a<br>10 TA = 85°C<br>100 Coss<br>————_———— TA = 25°C _ S ee SS| | | Lt<br>1 ee = C rss —<br>a Qs<br>0.1 | 10 Ff | | | ff ft dt dd<br>0 10 20 30<br>0 2 4 6 8 10 12 14 16 18 20<br>Figure 9 Typical Drain-Source Leakage Current vs. Voltage VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 10 Typical Junction Capacitance<br>10 100<br>R Limited DS(on) eT ee Ne el PW = 100µs<br>Soca ae<br>8 eetONT<br>VDS =15 10 eK KN<br>ID = 10A NON<br>6 pO INANENNNN NTTENSESN<br>DC<br>SAA SNK PoyAE<br>1 PW = 10s ISSANeeAN J<br>4 oe PW = 1s ee Se eeee<br>[fT NAINSESNmeee<br>Lo P W = DP 100ms INNINT STPy<br>0.1 TJ(m ax) = 150°C P W = 10ms SAXONSANT<br>2 TC = 25°C Sepaf NNO<br>VGS = 10V Seo PW = 1ms -NNEEEESPTT<br>Single Pulse<br>DUT on 1 * MRP Board<br>0 0.01 ThtCh<br>0 2 4 6 8 10 12 14 0.1 1 10 100<br>Qg, TOTAL GATE CHARGE (nC) VDS , DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 Gate-Source Voltage vs. Total Gate Charge Figure 12 SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE<br>GS(TH)<br>V<br>, SOURCE CURRENT (A)<br>IS<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>, DRAIN LEAKAGE CURRENT (nA)<br>IDSS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> 5 of 9 **www.diodes.com** DMC3028LSDX Document number: DS36210 Rev. 4 - 2 November 2015 © Diodes Incorporated **DMC3028LSDX** **P-Channel – Q2** **==> picture [484 x 666] intentionally omitted <==** **----- Start of picture text -----**<br> 20 VGS = -10V 20<br>VDS = -5.0V<br>15 VGS = -5.0V 15<br>Pr VGS = -4.5V<br>VGS = -4.0V<br>10 V GS = -3.5V 10<br>5 | VGS = -3.0V 5 TA = 125TA = 150C C i] TA = 85C<br>TA = 25C<br>0 fo VGS = -2.5V 0 a TA = -55C<br>0 1 2 3 4 5 0 1 2 3 4 5<br>-VDS, DRAIN -SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>0.05 0.30<br>ID = -7.0A<br>0.25<br>0.04 ID = -6.2A<br>0.20<br>0.03<br>VGS = -4.5V<br>0.15<br>0.02<br>VGS = -10V 0.10<br>0.01<br>0.05<br>0 0<br>0 5 10 15 20 25 30 0 5 10 15 20<br>-ID, DRAIN SOURCE CURRENT (A) -VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs. Figure 4 Typical Drain-Source On-Resistance<br>Drain Current and Gate Voltage vs. Gate-Source Voltage<br>0.05 1.8<br>VGS = -4.5V TA = 150C<br>0.04 ott TA = 125 ee C 1.6 TILE V IDGS = -10A = -10V<br>TA = 85C 1.4<br>0.03<br>TA = 25C VGS = -5.0V<br>1.2 ID = -5.0A<br>0.02 T A = -55C<br>1.0<br>0.01<br>0.8<br>0 0 PoCCEEEE) 2 4 6 8 10 12 14 16 18 20 | 0.6-50 EEE -25 ya 0 25 50 75 100 125 150<br>-ID, DRAIN SOURCE CURRENT (A) TJ, JUNCTION TEMPERATURE (C)<br>Figure 5 Typical On-Resistance vs. Figure 6 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, DRAIN CURRENT (A)<br>D<br>-I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>DS(ON)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> 6 of 9 **www.diodes.com** DMC3028LSDX Document number: DS36210 Rev. 4 - 2 November 2015 © Diodes Incorporated **DMC3028LSDX** **==> picture [504 x 720] intentionally omitted <==** **----- Start of picture text -----**<br> DMC3028LSDX<br>'nm CORPORA :S<br>0.05 3.0<br>2.5<br>0.04<br>VGS = -5.0V<br>ID -5.0= A 2.0<br>0.03 Tr ee = TTT -ID = 1mA<br>1.5 -I D = 250µA<br>0.02 ee sg V GS = -10V SS~~ |<br>ID -10= A 1.0<br>0.01<br>0.5<br>0 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TA, AMBIENT TEMPERATURE (°C)<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Ambient Temperature<br>20 100<br>eaa eee PW = 100µs ||<br>—} bet SHS<br>15 10<br>LT eN NIN NNRNR<br>yo" INT AN NENT ST<br>DC<br>10 1<br>TA= 150C rs es PW = 10s | P W = 1s NSC INF AT<br>TA= 125C<br>5 TA= 85 C / 0.1 |ee| ee | PW = 100ms P INGN W = 10ms NR OAT FN TT<br>//] kel TA= 25C SEE PW = 1ms<br>/] TA= -55C —— SSR<br>0 Z — iCeri eS<br>0 0.2 0.4 Co 0.6 0.8 1.0 1.2 0.010.1 1 Cer 10 100<br>Figure 9 Diode Forward Voltage vs. Current-VSD, SOURCE-DRAIN VOLTAGE (V) VDS , DRAIN-SOURCE VOLTAGE (V)<br>Figure 10 SOA, Safe Operation Area<br>1<br>D = 0.9<br>ST D = 0.7 eee<br>D = 0.5 TTT<br>bo [ToT] te<br>|<br>D = 0.3<br>TUieeeest call Cana ERO EMO<br>0.1 LAI D = 0.1 ane<br>Se ee LLaaa ee omea apewrmaa INnn TMaa eaeUlTTT<br>Sess D = 0.05 ieeeeett eee etet eee e e T<br>POT<br>HE Ft<br>D = 0.02<br>TTA ECHR THEE<br>0.01 AINA UA<br>7 D = 0.01 20 ee ee<br>See aft ee ee me teeeT<br>ee D = 0.005 cee ee ee ee R JA (t) = r(t) * R JA WH<br>ee FE RJA = 113 ° C/W HH<br>D = Single Pulse Duty Cycle, D = t1/ t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13 Transient Thermal Resistance<br>GS(TH)<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>S<br>, SOURCE CURRENT (A)<br>-I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(on)<br>D<br>, DRAIN CURRENT (A)<br>I<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> 7 of 9 DMC3028LSDX Document number: DS36210 Rev. 4 - 2 November 2015 © Diodes Incorporated **www.diodes.com** **DMC3028LSDX** ## **Package Outline Dimensions** Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. **==> picture [380 x 157] intentionally omitted <==** **----- Start of picture text -----**<br> SO-8<br>Dim Min Max<br>A - 1.75<br>A1 0.10 0.20<br>E1 E A2 1.30 1.50<br>Gauge Plane<br>A1 Seating Plane A3 0.15 0.25<br>L b 0.3 0.5<br>Detail ‘A’ D 4.85 4.95<br>E 5.90 6.10<br>| Pe E1 3.85 3.95<br>h 45° 7°~9° e 1.27 Typ<br>h - 0.35<br>A2 A A3 Detail ‘A’ L 0.62 0.82<br>Θ 0 8<br>e b A. All Dimensions in mm<br>D<br>0.254<br>**----- End of picture text -----**<br> ## **Suggested Pad Layout** Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. **==> picture [98 x 121] intentionally omitted <==** **----- Start of picture text -----**<br> X<br>Ce 7<br>C1<br>C2<br>Y<br>TH &<br>**----- End of picture text -----**<br> **==> picture [112 x 80] intentionally omitted <==** **----- Start of picture text -----**<br> Dimensions Value (in mm)<br>X 0.60<br>Y 1.55<br>C1 5.4<br>C2 1.27<br>pe<br>**----- End of picture text -----**<br> 8 of 9 **www.diodes.com** DMC3028LSDX Document number: DS36210 Rev. 4 - 2 November 2015 © Diodes Incorporated **DMC3028LSDX** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated **www.diodes.com** 9 of 9 **www.diodes.com** DMC3028LSDX Document number: DS36210 Rev. 4 - 2 November 2015 © Diodes Incorporated
Updated at June 9, 2026
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