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DMC3028LSD
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 5.5 A, 5.5 A, 0.028 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.3W
- Power Dissipation P Channel: 1.3W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 5.5A
- Continuous Drain Current Id P Channel: 5.5A
- Drain Source On State Resistance N Channel: 0.028ohm
- Drain Source On State Resistance P Channel: 0.028ohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.259 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**A Product Line of Diodes Incorporated** **DMC3028LSD** ## **30V COMPLEMENTARY DUAL ENHANCEMENT MODE MOSFET** Please click here to visit our online spice models database. Please click here to visit our online spice models database. ## **Product Summary** |**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**| |---|---|---|---| ||||| |**Device**|**V(BR)DSS**|**RDS(on)**|**ID**<br>**TA = 25**°**C**| |Q1|30V|28mΩ@ VGS= 10V|7.1A| |||45mΩ@ VGS= 4.5V|5.6A| |Q2|-30V|25mΩ@ VGS= -10V|-7.4A| |||41mΩ@ VGS= -4.5V|-5.7A| ## **Features and Benefits** - Low on-resistance - Fast switching speed - “Green” Component and RoHS Compliant (Note 1) ## **Mechanical Data** - Case: SO-8 - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) - Moisture Sensitivity: Level 1 per J-STD-020D ## **Description and Applications** This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications. - Terminals Connections: See Diagram - Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 - Weight: 0.074 grams (approximate) - Motor control - Backlighting - DC-DC Converters - Power management functions **==> picture [412 x 104] intentionally omitted <==** **----- Start of picture text -----**<br> D1 D2<br>S1 | || Ltt D1<br>> G1 TT TT D1<br>G1 G2<br>S2 |_| | | D2<br>&<br>G2 mn TT D2 S1 S2<br>TOP VIEW Top view Q1 N-Channel Q2 P-Channel<br>**----- End of picture text -----**<br> ## **Ordering Information** (Note 1) |**Product**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**| |---|---|---|---|---| |DMC3028LSD-13|C3028LD|13|12|2,500| Note: 1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website ## **Marking Information** **C3028LD YY WW** > = Manufacturer’s Marking oN C3028LD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-52) 1 of 11 **www.diodes.com** DMC3028LSD Document Revision: 4 July 2009 © Diodes Incorporated **A Product Line of Diodes Incorporated** | **DMC3028LSD** [| **Maximum Ratings** @TA = 25°C unless otherwise specified |**Characteristic**<br>~~———=S~~|**Characteristic**<br>~~———=S~~|**Characteristic**<br>~~———=S~~|**Symbol**<br>~~———=S~~|**N-Channel - Q1**<br>~~———=S~~|**P-Channel - Q2**<br>~~———=S~~|**Units**<br>~~———=S~~| |---|---|---|---|---|---|---| |Drain-Source Voltage<br>~~———=S~~|||VDSS<br>~~———=S~~|30<br>~~———=S~~|-30<br>~~———=S~~|V<br>~~———=S~~| |Gate-Source Voltage<br>~~———=S~~<br>~~SS~~|||VGSS<br>~~———=S~~|±20<br>~~———=S~~|±20<br>~~———=S~~|V<br>~~———=S~~| |Continuous Drain Current<br>~~|~~|VGS= 10V<br>|(Notes 3 & 5)<br>~~——~~<br>~~SS~~|ID|7.1|-7.4|A| |||TA= 70°C(Notes 3 & 5)<br>~~——~~<br>~~SS~~||5.7|-5.9|| |||(Notes 2 & 5)<br>~~——~~<br>~~SS~~||5.5|-5.8|| |||(Notes 2 & 6)<br>~~——~~<br>~~SS~~||6.6|-6.8|| |Pulsed Drain Current<br>~~| ~~|VGS= 10V<br>|(Notes 4 & 5)<br>~~——~~<br> ~~SS~~<br>~~ee~~|IDM<br>~~ee~~|34<br>~~ee~~|-36<br>~~ee~~|A| |Continuous Source Current (Body diode)<br> <br>~~es~~||(Notes 3 & 5)<br> ~~SS~~<br>~~es~~<br>~~ee~~|IS<br>~~es~~<br>~~ee~~|3.5<br>~~es~~<br>~~ee~~|-3.5<br>~~es~~<br>~~ee~~|A<br>~~es~~| |Pulsed Source Current (Body diode)<br> <br>~~es~~||(Notes 4 & 5)<br> ~~SS~~<br>~~es~~<br>~~ee~~|ISM<br>~~es~~<br>~~ee~~|34<br>~~es~~<br>~~ee~~|-36<br>~~es~~<br>~~ee~~|A<br>~~es~~| **Thermal Characteristics** @TA = 25°C unless otherwise specified |**Thermal Characteristics **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Thermal Characteristics **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|||| |---|---|---|---|---|---| |**Characteristic**||**Symbol**|**N-Channel - Q1**|**P-Channel - Q2**|**Unit**| |Power Dissipation<br>Linear DeratingFactor|(Notes 2 & 5)|PD|1.3<br>10||W<br>mW/°C| |Power Dissipation<br>Linear DeratingFactor|(Notes 2 & 6)|PD|1.8<br>14||W<br>mW/°C| |Power Dissipation<br>Linear DeratingFactor|(Notes 3 & 5)|PD|2.1<br>17||W<br>mW/°C| |Thermal Resistance, Junction to Ambient|(Notes 2 & 5)<br>(Notes 2 & 6)<br>(Notes 3 & 5)|RθJA|100<br>70<br>60||°C/W| |Thermal Resistance, Junction to Lead|(Notes 5 & 7)|RθJL|51|46|°C/W| |Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150||°C| - Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 3. Same as note (2), except the device is measured at t ≤ 10 sec. 4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 5. For a dual device with one active die. 6. For a device with two active die running at equal power. 7. Thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 11 **www.diodes.com** DMC3028LSD Document Revision: 4 July 2009 © Diodes Incorporated **A Product Line of Diodes Incorporated** **DMC3028LSD** **==> picture [350 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> R R<br>DS(ON) DS(ON)<br>10 Limited et NN NTN SS 10 Limited NN<br>1 DC 1 DC<br>1s 1s<br>100ms 100ms<br>100m PASell 10ms 27, =n ||E 100m Poeel 10ms ERS—<br>Notes 2 & 5 1ms Notes 2 & 5 1ms<br>100us 100us<br>10m Single Pulse, T eo amb=25°C 10m Single Pulse, T re amb=25°C<br>0.1 1 10 0.1 1 10<br>VDS Drain-Source Voltage (V) -VDS Drain-Source Voltage (V)<br>N-channel Safe Operating Area P-channel Safe Operating Area<br>2.0<br>100<br>05000000) TTT TTT<br>CLA<br>80 eT TTTTATA ETT TTEAEA V1TETE aaAPTTTAPTTTTT 1.5 aweININ Two active die<br>a PNG<br>60 D=0.5 One active die<br>1.0<br>Cr A oo<br>TT ‘OT PN<br>40<br>eZ” D=0.2 A Single Pulseingle Pulsegle Pulsele Pulsee Pulse Pulseulselsese ~ an an<br>0.5<br>20 aa NB D=0.05 I PNT<br>ean ll PN AT<br>0 ATSeeeUMeeeUMUM CTom D=0.1 sulIEIUUlIEIUUlEIUUl 0.0 PESN<br>100µ 1m 10m 100m 1 10 100 1k 0 25 50 75 100 125<br> Drain Current (A)ID Drain Current (A)-ID<br>Thermal Resistance (°C/W) Max Power Dissipation (W)<br>**----- End of picture text -----**<br> **==> picture [363 x 148] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0<br>100<br>05000000) TTT TTT<br>CLA TIIIILII<br>80 eT TTTTATA ETT TTEAEA V1TETE aaAPTTTAPTTTTT 1.5 aweININ Two active die<br>a PNG<br>60 D=0.5 One active die<br>1.0<br>Cr A oo<br>TT ‘OT PN<br>40<br>eZ” D=0.2 A Single Pulseingle Pulsegle Pulsele Pulsee Pulse Pulseulselsese ~ an an<br>0.5<br>20 aa NB D=0.05 I PNT<br>ean ll PN AT<br>om D=0.1 Ul SN<br>0 ATSeeeUMeeeUMUM CTom sulIEIUUlIEIUUlEIUUl 0.0 PESN<br>100µ 1m 10m 100m 1 10 100 1k 0 25 50 75 100 125 150<br>Pulse Width (s) Temperature (°C)<br>Transient Thermal Impedance Derating Curve<br>Thermal Resistance (°C/W) Max Power Dissipation (W)<br>**----- End of picture text -----**<br> **==> picture [183 x 120] intentionally omitted <==** **----- Start of picture text -----**<br> Single Pulse<br>100 PAM Ti T amb =25°C LI<br>FEE NEEtt<br>Sacer [aaa] en ee tt<br>LV<br>CAM FESC<br>10 AAASN<br>|PT |<br>Con TT PTT EIEN TTT<br>1 PTT ETTCPTPATI TI LTT) Tithe (ccm<br>100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s)<br>Maximum Power (W)<br>**----- End of picture text -----**<br> **Pulse Power Dissipation** 3 of 11 **www.diodes.com** DMC3028LSD Document Revision: 4 July 2009 © Diodes Incorporated **A Product Line of Diodes Incorporated DMC3028LSD** [ **Electrical Characteristics – Q1 N-Channel** @TA = 25°C unless otherwise specified |**Electrical Characteristics – Q1 N-Channel** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics – Q1 N-Channel** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics – Q1 N-Channel** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics – Q1 N-Channel** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics – Q1 N-Channel** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics – Q1 N-Channel** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics – Q1 N-Channel** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified| |---|---|---|---|---|---|---| |||||||| |**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~|**Min**<br>~~ee~~|**Typ**<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|**Test Condition**<br>~~ee~~| |**OFF CHARACTERISTICS**<br>~~ee~~||||||| |Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|30<br>~~ee~~|⎯<br>~~ee~~|⎯<br>~~ee~~|V<br>~~ee~~|ID= 250μA, VGS= 0V<br>~~ee~~| |Zero Gate Voltage Drain Current|IDSS|⎯|⎯|0.5|μA|VDS= 30V, VGS= 0V| |Gate-Source Leakage|IGSS|⎯|⎯|±100|nA|VGS=±20V, VDS= 0V| |**ON CHARACTERISTICS**<br>~~I~~<br>~~I(ND ON(OO~~||||||| |Gate Threshold Voltage<br>~~IID~~|VGS(th)<br>~~IID~~<br>~~I~~|1.0<br>~~IID~~<br>~~I~~|⎯<br>~~IID~~<br>~~(ND ON~~|3.0<br>~~IID~~<br>~~ON~~|V<br>~~IID~~<br>~~(OO~~|ID= 250μA, VDS= VGS<br>~~IID~~| |Static Drain-Source On-Resistance (Note 8)<br>~~EE~~|RDS (ON)<br>~~I~~<br>~~EE~~<br>~~tn~~|⎯<br>~~I ~~<br>~~EE~~<br>~~I~~|⎯<br> ~~(ND ON~~<br>~~EE~~<br>~~(ND~~|0.028<br>~~ON ~~<br>~~EE~~|Ω<br> ~~(OO~~<br>~~EE~~<br>~~OU~~|VGS= 10V, ID= 6.0A<br>~~EE~~| |||||0.045<br>~~EE~~<br>~~IS~~||VGS= 4.5V, ID= 4.9A<br>~~EE~~| |Forward Transconductance (Notes 8 & 9)<br>~~nD~~|gfs<br>~~nD~~<br>~~tn~~|⎯<br>~~nD~~<br>~~I~~|12<br>~~nD~~<br>~~(ND~~|⎯<br>~~nD~~<br>~~IS~~|S<br>~~nD~~<br>~~OU~~|VDS= 15V, ID= 6.0A<br>~~nD~~| |Diode Forward Voltage (Note 8)<br>~~ee~~|VSD<br>~~tn~~<br>~~ee~~|⎯<br>~~I ~~<br>~~ee~~|0.68<br> ~~(ND~~<br>~~ee~~|1.2<br>~~IS ~~<br>~~ee~~|V<br> ~~OU~~<br>~~ee~~|IS= 1.7A, VGS= 0V<br>~~ee~~| |Reverse recovery time (Note 9)<br>~~ee~~|trr<br>~~ee~~<br>~~(~~|~~ee~~|11.5<br>~~ee~~|⎯<br>~~ee~~|ns<br>~~ee~~|IS= 1.7A, di/dt= 100A/μs<br>~~ee~~| |Reverse recovery charge (Note 9)<br>~~ee~~<br>~~nn~~|Qrr<br>~~ee~~<br>~~nn~~<br>~~(~~|⎯<br>~~ee~~<br>~~nn~~|4.4<br>~~ee~~<br>~~nn~~|⎯<br>~~ee~~<br>~~nn~~|nC<br>~~ee~~<br>~~nn~~|| |**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~(~~||||||| |Input Capacitance<br>~~ee~~|Ciss<br>~~ee~~|⎯<br>~~ee~~|472<br>~~ee~~|⎯<br>~~ee~~|pF<br>~~ee~~|VDS= 15V, VGS= 0V<br>f= 1MHz<br>~~ee~~| |Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|⎯<br>~~ee~~|178<br>~~ee~~|⎯<br>~~ee~~|pF<br>~~ee~~|| |Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|⎯<br>~~ee~~|65<br>~~ee~~|⎯<br>~~ee~~|pF<br>~~ee~~|| |Total Gate Charge<br>~~ey~~|Qg<br>~~ey~~|⎯<br>~~ey~~|5.2<br>~~ey~~|⎯<br>~~ey~~|nC<br>~~ey~~|VDS= 15V, VGS= 4.5V<br>ID= 6A<br>~~ey~~| |Total Gate Charge<br>~~ey~~<br>~~eS~~|Qg<br>~~ey~~<br>~~eS~~|⎯<br>~~ey~~<br>~~eS~~|10.5<br>~~ey~~<br>~~eS~~|⎯<br>~~ey~~<br>~~eS~~|nC<br>~~ey~~<br>~~eS~~|VDS= 15V, VGS= 10V<br>ID= 6A<br>~~ey~~<br>~~eS~~<br>~~ee~~| |Gate-Source Charge<br>~~eS~~|Qgs<br>~~eS~~|⎯<br>~~eS~~|1.86<br>~~eS~~|⎯<br>~~eS~~|nC<br>~~eS~~|| |Gate-Drain Charge<br>~~eS~~<br>~~————~~|Qgd<br>~~eS~~|⎯<br>~~eS~~|2.3<br>~~eS~~|⎯<br>~~eS~~<br>~~ee~~|nC<br>~~eS~~<br>~~ee~~|| |Turn-On Delay Time (Note 10)<br>~~eS~~<br>~~————~~|tD(on)<br>~~eS~~|⎯<br>~~eS~~|2.5<br>~~eS~~|⎯<br>~~eS~~<br>~~ee~~|ns<br>~~eS~~<br>~~ee~~|VDD= 15V, VGS= 10V<br>ID= 1A, RG≅6.0Ω<br>~~eS~~<br>~~ee~~| |Turn-On Rise Time (Note 10)<br>~~————~~|tr|⎯|3.1|⎯<br>~~ee~~|ns<br>~~ee~~|| |Turn-Off Delay Time (Note 10)<br>~~————~~|tD(off)|⎯|14|⎯<br>~~ee~~|ns<br>~~ee~~|| |Turn-Off Fall Time (Note 10)<br>~~————~~|tf|⎯|9.7|⎯<br>~~ee~~|ns<br>~~ee~~|| Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 9. For design aid only, not subject to production testing. 10. Switching characteristics are independent of operating junction temperatures. 4 of 11 **www.diodes.com** DMC3028LSD Document Revision: 4 July 2009 © Diodes Incorporated **A Product Line of Diodes Incorporated DMC3028LSD** ## **Q1 N-Channel** **==> picture [392 x 460] intentionally omitted <==** **----- Start of picture text -----**<br> 10V 5V 4.5V T = 150°C 10V 4.5V 4V<br>10 4V 10 3.5V<br>3.5V<br>3V<br>1 3V 1 2.5V<br>0.1 Hii 0.1 Pe 2V<br>2.5V<br>T = 25°C VGS V GS<br>0.01 Af ttt, ett 0.01 Poth<br>0.1 1 10 0.1 1 10<br>VDS Drain-Source Voltage (V) VDS Drain-Source Voltage (V)<br>Output Characteristics Output Characteristics<br>1.6<br>10 VDS = 10V V GS = 10V<br>aa 1.4 I D = 6A R DS(on)<br>1.2<br>T = 150°C i a ao ee en ae<br>1 ff A|| 1.0 aSe<br>T = 25°C 0.8 V GS(th)<br>ia AeAee 2Aee —_—s—ifae ~eee<br>0.6 VGS = VDS<br>A — I D = 250uA ——~N<br>0.1 Yo fd 0.4 a a<br>2 3 4 -50 0 50 100 150<br>VGS Gate-Source Voltage (V) Tj Junction Temperature (°C)<br>Typical Transfer Characteristics Normalised Curves v Temperature<br>1000 10<br>2.5V<br>T = 25°C VGS<br>100<br>3V 1 T = 150°C<br>Se Se ———_—_—<_————<br>10<br>3.5V<br>fee pel 4V 0.1 ee Soe T = 25 ae °C<br>1 i pf<br>4.5V 0.01<br>0.1<br>10V Vgs = -3V<br>0.01 —————————— 1E-3 7t ys<br>0.01 0.1 1 10 0.2 0.4 0.6 0.8<br>ID Drain Current (A) VSD Source-Drain Voltage (V)<br>On-Resistance v Drain Current Source-Drain Diode Forward Voltage<br> Drain Current (A) Drain Current (A)<br>ID ID<br>GS(th)<br> and V<br>DS(on)<br> Drain Current (A)<br>ID<br>Normalised R<br> Reverse Drain Current (A)<br> Drain-Source On-Resistance (W)DS(on) ISD<br>R<br>**----- End of picture text -----**<br> 5 of 11 **www.diodes.com** DMC3028LSD Document Revision: 4 July 2009 © Diodes Incorporated **A Product Line of Diodes Incorporated** **DMC3028LSD** ## **Q1 N-Channel continued** **==> picture [391 x 152] intentionally omitted <==** **----- Start of picture text -----**<br> 700 10<br>600 V GS = 0V 9 I D = 6A<br>PSSoe f = 1MHz 8 SAABAEUUUUEEERUEEED?<8<br>500 PNWH 7 SRRRRRRRRRRPLETT TTT TT TT TATee<br>PK ——_|<br>6<br>400<br>CoS E> C ISS 5 PPE A<br>300 C OSS 4<br>ch So PCOCCEAEee A<br>200 a = 3 HAT VDS = 15V<br>a ee 2 PTY<br>100<br>LLmaoeLLP C TTT RSS Perf4 oo 1 PALL<br>0 mann Corr i 0 VTETT Ey E y Ey<br>1 10 0 1 2 3 4 5 6 7 8 9 10 11<br>VDS - Drain - Source Voltage (V) Q - Charge (nC)<br>Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge<br>C Capacitance (pF) Gate-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br> ## **Test Circuits – Q1 N-Channel** **==> picture [133 x 141] intentionally omitted <==** **----- Start of picture text -----**<br> Q G<br>V G Q GS Q GD<br>Charge<br>—<br>**----- End of picture text -----**<br> **==> picture [158 x 121] intentionally omitted <==** **----- Start of picture text -----**<br> Current<br>regulator<br>|p ooo so s el<br>12V 50k Same as<br>| D.U.T I<br>0 .2.F | !<br>a<br>V DS<br>& IG<br>D.U.T<br>ID<br>V GS<br>**----- End of picture text -----**<br> ## **Basic gate charge waveform** ## **Gate charge test circuit** **==> picture [202 x 117] intentionally omitted <==** **----- Start of picture text -----**<br> 90%V DS fN<br>\/ f<br>I I<br>10%V GS /\| \|SfA\ II!I<br>les td(on) < tr > ! ! <> t d(off) | <—>»> tr |<br>\ ¢§—_____ t(on) 4 | |< t(on) +1<br>**----- End of picture text -----**<br> **==> picture [175 x 55] intentionally omitted <==** **----- Start of picture text -----**<br> R D<br>V GS V DS<br>R G VDD<br>|,<br>**----- End of picture text -----**<br> ## **Switching time waveforms** ## **Switching time test circuit** 6 of 11 **www.diodes.com** DMC3028LSD Document Revision: 4 July 2009 © Diodes Incorporated **A Product Line of Diodes Incorporated DMC3028LSD** [ **Electrical Characteristics – Q2 P-Channel** @TA = 25°C unless otherwise specified |**Electrical Characteristics – Q2 P-Channel** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics – Q2 P-Channel** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics – Q2 P-Channel** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics – Q2 P-Channel** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics – Q2 P-Channel** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics – Q2 P-Channel** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics – Q2 P-Channel** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified| |---|---|---|---|---|---|---| |||||||| |**Characteristic**<br>~~ee~~|**Symbol**<br>|**Min**<br>~~——————~~|**Typ**<br>~~——————~~|**Max**<br>~~——————~~|**Unit**<br>~~——————~~|**Test Condition**<br>~~——————~~| |**OFF CHARACTERISTICS**<br>~~ee——————~~||||||| |Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>|-30<br>~~——————~~|⎯<br>~~——————~~|⎯<br>~~——————~~|V<br>~~——————~~|ID= -250μA, VGS= 0V<br>~~——————~~| |Zero Gate Voltage Drain Current<br>~~ee ~~<br>~~BE~~|IDSS<br> <br>~~BE~~|⎯<br> ~~——————~~<br>~~BE~~|⎯<br>~~——————~~<br>~~BE~~|-0.5<br>~~——————~~<br>~~BE~~|μA<br>~~——————~~<br>~~BE~~|VDS= -30V, VGS= 0V<br>~~——————~~<br>~~BE~~| |Gate-Source Leakage<br>~~BE~~|IGSS<br>~~BE~~|⎯<br>~~BE~~|⎯<br>~~BE~~|±100<br>~~BE~~|nA<br>~~BE~~|VGS=±20V, VDS= 0V<br>~~BE~~| |**ON CHARACTERISTICS**<br>~~GOOC~~||||||| |Gate Threshold Voltage<br>~~Ge~~|VGS(th)<br>~~Ge~~|-1.0<br>~~Ge~~<br>~~GO~~|⎯<br>~~Ge~~<br>~~GO~~|-3.0<br>~~Ge~~<br>~~OC~~|V<br>~~Ge~~<br>~~OC~~|ID= -250μA, VDS= VGS<br>~~Ge~~<br>~~OC~~| |Static Drain-Source On-Resistance (Note 8)<br>~~ee~~|RDS (ON)<br>~~ee~~|⎯<br>~~GO~~<br>~~ee~~|⎯<br>~~GO ~~<br>~~ee~~|0.025<br> ~~OC~~<br>~~ee~~|Ω<br>~~OC~~<br>~~ee~~|VGS= -10V, ID= -7.1A<br>~~OC~~<br>~~ee~~| |||||0.041<br>~~ee~~||VGS= -4.5V, ID= -5.5A<br>~~ee~~| |Forward Transconductance (Notes 8 & 9)<br>~~EE~~|gfs<br>~~EE~~|⎯<br>~~EE~~|18.6<br>~~EE~~|⎯<br>~~EE~~|S<br>~~EE~~|VDS= -15V, ID= -7.1A<br>~~EE~~| |Diode Forward Voltage (Note 8)<br>~~EE~~|VSD<br>~~EE~~|⎯<br>~~EE~~|-0.80<br>~~EE~~|-1.2<br>~~EE~~|V<br>~~EE~~|IS= -1.7A, VGS= 0V<br>~~EE~~| |Reverse recovery time (Note 9)<br>~~EE~~|trr<br>~~EE~~|~~EE~~|16.2<br>~~EE~~|⎯<br>~~EE~~|ns<br>~~EE~~|IS= -2.2A, di/dt= 100A/μs<br>~~EE~~| |Reverse recovery charge (Note 9)<br>~~EE~~|Qrr<br>~~EE~~|⎯<br>~~EE~~|10<br>~~EE~~|⎯<br>~~EE~~|nC<br>~~EE~~|| |**DYNAMIC CHARACTERISTICS(Note 9)**||||||| |Input Capacitance<br>~~EE~~|Ciss<br>~~EE~~|⎯<br>~~EE~~|1678<br>~~EE~~|⎯<br>~~EE~~|pF<br>~~EE~~|VDS= -15V, VGS= 0V<br>f= 1MHz<br>~~EE~~| |Output Capacitance<br>~~EE~~|Coss<br>~~EE~~|⎯<br>~~EE~~|303<br>~~EE~~|⎯<br>~~EE~~|pF<br>~~EE~~|| |Reverse Transfer Capacitance<br>~~EE~~|Crss<br>~~EE~~|⎯<br>~~EE~~|178<br>~~EE~~|⎯<br>~~EE~~|pF<br>~~EE~~|| |Total Gate Charge<br>~~rep~~|Qg<br>~~rep~~|⎯<br>~~rep~~|16.4<br>~~rep~~|⎯<br>~~rep~~|nC<br>~~rep~~|VDS= -15V, VGS= -4.5V<br>ID= -7.1A<br>~~rep~~| |Total Gate Charge<br>~~rep~~<br>~~eee~~|Qg<br>~~rep~~<br>~~eee~~|⎯<br>~~rep~~<br>~~eee~~|31.6<br>~~rep~~<br>~~eee~~|⎯<br>~~rep~~<br>~~eee~~|nC<br>~~rep~~<br>~~eee~~|VDS= -15V, VGS= -10V<br>ID= -7.1A<br>~~rep~~<br>~~eee~~<br>~~ee~~| |Gate-Source Charge<br>~~eee~~|Qgs<br>~~eee~~|⎯<br>~~eee~~|4.3<br>~~eee~~|⎯<br>~~eee~~|nC<br>~~eee~~|| |Gate-Drain Charge<br>~~eee~~<br>~~———_—~~|Qgd<br>~~eee~~<br>~~———_—~~|⎯<br>~~eee~~|6.2<br>~~eee~~|⎯<br>~~eee~~<br>~~ee~~|nC<br>~~eee~~<br>~~ee~~|| |Turn-On Delay Time (Note 10)<br>~~eee~~<br>~~———_—~~|tD(on)<br>~~eee~~<br>~~———_—~~|⎯<br>~~eee~~|3.5<br>~~eee~~|⎯<br>~~eee~~<br>~~ee~~|ns<br>~~eee~~<br>~~ee~~|VDD= -15V, VGS= -10V<br>ID= -1A, RG≅6.0Ω<br>~~eee~~<br>~~ee~~| |Turn-On Rise Time (Note 10)<br>~~———_—~~|tr<br>~~———_—~~|⎯|4.9|⎯<br>~~ee~~|ns<br>~~ee~~|| |Turn-Off Delay Time (Note 10)<br>~~———_—~~|tD(off)<br>~~———_—~~|⎯|44|⎯<br>~~ee~~|ns<br>~~ee~~|| |Turn-Off Fall Time (Note 10)<br>~~———_—~~|tf<br>~~———_—~~|⎯|28|⎯<br>~~ee~~|ns<br>~~ee~~|| 10. Switching characteristics are independent of operating junction temperatures. 7 of 11 **www.diodes.com** DMC3028LSD Document Revision: 4 July 2009 © Diodes Incorporated **A Product Line of Diodes Incorporated** **DMC3028LSD** ## **Q2 P-Channel** **==> picture [392 x 465] intentionally omitted <==** **----- Start of picture text -----**<br> 2 ee SO jE EE<br>10V T = 150°C 10V<br>Ei 4.5V a 3.5V —_ a... 3.5V a<br>3V 10 3V<br>10 i nie hye ee te<br>GeneLLAA2D aaA | eeeerm ttel ee 2.5V 1 arn1rgis —ee_—— |e 2.5V ——<br>2V<br>1<br>Pe ar 0.1 He<br>T = 25°C V GS VGS<br>0.1 eT...Le Tee 0.01 eePon eect<br>0.1 1 10 0.1 1 10<br>-VDS Drain-Source Voltage (V) -VDS Drain-Source Voltage (V)<br>Output Characteristics Output Characteristics<br>1.6<br>10 ee VDS = 10V 1.4 ft V I D GS = 7.1A = 10V | A<br>—a eei > aa aoe 1.2 po ata R DS(on)<br>a T = 150°C eyffA PRa ae<br>1 lf 1.0 Pa<br>tf f~ T = 25°C 0.8 aa<br>ey Ay Ae 0.6 = VI D GS = 250uA = VDS — V GS(th)<br>0.1 | ff 0.4 |— P|<br>2 3 -50 0 50 100 150<br>-VGS Gate-Source Voltage (V) Tj Junction Temperature (°C)<br>Typical Transfer Characteristics Normalised Curves v Temperature<br>10 2.5V T = 25°C VGS 10<br>ee2] _==.=2e T = 150°C<br>1<br>et pf ff ___t<br>3V<br>1 el<br>3.5V 0.1 T = 25°C<br>0.1 livA Pfa A eeeefe<br>0.01<br>4V<br>10V Vgs = 0V<br>0.01 ————_=a a 1E-3 FFZo<br>0.1 1 10 0.2 0.4 0.6 0.8 1.0<br>-ID Drain Current (A) -VSD Source-Drain Voltage (V)<br>On-Resistance v Drain Current Source-Drain Diode Forward Voltage<br> Drain Current (A) Drain Current (A)<br>D D<br>-I -I<br>GS(th)<br> and V<br>DS(on)<br> Drain Current (A)<br>D<br>-I<br>Normalised R<br>)Ω<br> Reverse Drain Current (A)<br>SD<br> Drain-Source On-Resistance ( -I<br>DS(on)<br>R<br>**----- End of picture text -----**<br> 8 of 11 **www.diodes.com** DMC3028LSD Document Revision: 4 July 2009 © Diodes Incorporated **A Product Line of Diodes Incorporated** **DMC3028LSD** ## **Q2 P-Channel continued** **==> picture [388 x 146] intentionally omitted <==** **----- Start of picture text -----**<br> 2500 10<br>V GS = 0V 9 I D = 7.1A<br>2000 PITToTPtCeeET| ETI f = 1MHz 87 REETPity etitty t T EAttPAA HH<br>1500 C ISS 6<br>lf ot C OSS HA 5 Pit tT tT tT tT tT A<br>1000 Baal | C RSS 4 Pitt tty tT wv<br>SGGiio Hee 3 Pitt te [yw]<br>500 Ban.Seeae07 ee| 2 peeLo VDS = 15V |||<br>Pa 1 V4EEE<br>0 PTET | | PF == F § 0 ARE EEEEEEEEEEE<br>1 10 0 5 10 15 20 25 30 35<br>-VDS - Drain - Source Voltage (V) Q - Charge (nC)<br>Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge<br>C Capacitance (pF) Gate-Source Voltage (V)<br>GS<br>-V<br>**----- End of picture text -----**<br> ## **Test Circuits – Q2 P-Channel** **==> picture [102 x 54] intentionally omitted <==** **----- Start of picture text -----**<br> QG<br>VG QGS QGD<br>**----- End of picture text -----**<br> **==> picture [148 x 121] intentionally omitted <==** **----- Start of picture text -----**<br> Current<br>regulator<br>12V 0.2 50k Same as<br>D.U.T<br>VDS<br>®) IG<br>D.U.T<br>| ID<br>VGS<br>**----- End of picture text -----**<br> Charge ## **Basic gate charge waveform** **Gate charge test circuit** **==> picture [184 x 116] intentionally omitted <==** **----- Start of picture text -----**<br> VDS<br>VW 90%<br>10%<br>VGS<br>tr td(off) tr td(on)<br>t(on) t(on)<br>**----- End of picture text -----**<br> **==> picture [174 x 76] intentionally omitted <==** **----- Start of picture text -----**<br> RD<br>VGS VDS<br>RG VDD<br>Pulse width 1<br>Duty factor 0.1%<br>**----- End of picture text -----**<br> ## **Switching time waveforms** ## **Switching time test circuit** 9 of 11 **www.diodes.com** DMC3028LSD Document Revision: 4 July 2009 © Diodes Incorporated **A Product Line of Diodes Incorporated** | ~~ZETEX~~ **DMC3028LSD** ~~Cd~~ ## **Package Outline Dimensions** **==> picture [8 x 28] intentionally omitted <==** **----- Start of picture text -----**<br> °<br>h x 45<br>**----- End of picture text -----**<br> |**DIM**<br>~~ee~~<br>~~I~~|**Inches**<br>~~ee~~<br>~~I~~|**Inches**<br>~~ee~~<br>~~I~~|**Millimeters**<br>~~ee~~<br>~~ee~~<br>~~I~~|**Millimeters**<br>~~ee~~<br>~~ee~~<br>~~I~~|**DIM**<br>~~ee~~<br>~~ee~~|**DIM**<br>**Inches**<br>**Min.**<br>**Max.**<br>~~ee~~<br>~~ee~~|**DIM**<br>**Inches**<br>**Min.**<br>**Max.**<br>~~ee~~<br>~~ee~~|**Millimeters**<br>~~ee~~<br>~~ee~~|**Millimeters**<br>~~ee~~<br>~~ee~~| |---|---|---|---|---|---|---|---|---|---| ||**Min.**<br>~~ee~~<br>~~I~~|**Max.**<br>~~ee~~<br>~~I~~|**Min.**<br>~~ee~~<br>~~I~~|**Max.**<br>~~ee~~<br>~~ee~~|||**Max.**<br>~~ee~~<br>~~ee~~|**Min.**<br>~~ee~~<br>~~ee~~|**Max.**<br>~~ee~~<br>~~ee~~| |A<br>~~ee~~<br>~~I~~|0.053<br>~~ee~~<br>~~I~~|0.069<br>~~ee~~<br>~~I~~|1.35<br>~~ee~~<br>~~I~~|1.75<br>~~ee~~<br>~~ee~~|e<br>~~ee~~<br>~~ee~~|0.050 BSC<br>~~ee~~<br>~~ee~~||1.27 BSC<br>~~ee~~<br>~~ee~~|| |A1<br>~~I~~<br>~~Pa~~|0.004<br>~~I~~<br>|0.010<br>~~I~~<br>|0.10<br>~~I~~<br>|0.25<br>~~ee~~<br>|b<br>~~ee~~<br>|0.013<br>~~ee~~<br>~~OO~~<br>|0.020<br>~~ee~~<br>~~OO~~<br>|0.33<br>~~ee~~<br>|0.51<br>~~ee~~<br>| |D<br>~~I~~<br>~~a OO~~<br>~~Pa~~|0.189<br>~~I~~<br>~~OO~~<br>|0.197<br>~~I~~<br>~~OO~~<br>|4.80<br>~~I~~<br>~~OO~~<br>|5.00<br>~~ee~~<br>~~OO~~<br>|c<br>~~ee ~~<br>~~OO~~<br>|0.008<br> ~~ee~~<br>~~OO~~<br>~~OO~~<br>|0.010<br>~~ee ~~<br>~~OO~~<br>~~OO~~<br>|0.19<br> ~~ee~~<br>~~OO~~<br>|0.25<br>~~ee~~<br>~~OO~~<br>| |H<br>~~a OO~~<br>~~Pa OO~~<br>~~Fs~~<br>~~Fa~~|0.228<br>~~OO~~<br>~~OO~~<br>~~A~~|0.244<br>~~OO~~<br>~~OO~~|5.80<br>~~OO~~<br>~~OO~~|6.20<br>~~OO~~<br>~~OO~~|θ<br>~~OO~~<br>~~OO~~|0°<br>~~OO~~<br>~~OO~~<br>~~OO~~|8°<br>~~OO~~<br>~~OO~~<br>~~OO~~|0°<br>~~OO~~<br>~~OO~~|8°<br>~~OO~~<br>~~OO~~| |E<br>~~Pa OO~~<br>~~Fs~~<br>~~Fa~~|0.150<br>~~OO~~<br>~~A~~|0.157<br>~~OO~~|3.80<br>~~OO~~|4.00<br>~~OO~~|h<br>~~OO~~|0.010<br>~~OO~~<br>~~OO~~|0.020<br>~~OO~~<br>~~OO~~|0.25<br>~~OO~~|0.50<br>~~OO~~| |L<br>~~OO~~<br>~~Fs~~<br>~~Fa~~|0.016<br>~~OO~~<br>~~A~~|0.050<br>~~OO~~|0.40<br>~~OO~~|1.27<br>~~OO~~|-<br>~~OO~~|-<br>~~OO~~|-<br>~~OO~~|-<br>~~OO~~|-<br>~~OO~~| ## **Suggested Pad Layout** **==> picture [182 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 1.52<br>0.060<br>(0000 ;<br>7.0 4.0<br>0.275 0.155<br>0.6 1.27<br>0.024 O00 0.050<br>mm<br>inches<br>**----- End of picture text -----**<br> 10 of 11 **www.diodes.com** DMC3028LSD Document Revision: 4 July 2009 © Diodes Incorporated **A Product Line of Diodes Incorporated** | ~~ZETEX~~ **DMC3028LSD** ~~-—_~~ ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. ## **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated **www.diodes.com** 11 of 11 **www.diodes.com** DMC3028LSD Document Revision: 4 July 2009 © Diodes Incorporated
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