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DMC3026LSD-13
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 6.5 A, 6.5 A, 0.025 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.6W
- Power Dissipation P Channel: 1.6W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 6.5A
- Continuous Drain Current Id P Channel: 6.5A
- Drain Source On State Resistance N Channel: 0.025ohm
- Drain Source On State Resistance P Channel: 0.028ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.21 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
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DMC3026LSD<br>COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET<br>Product Summary Features and Benefits<br>Device V(BR)DSS RDS(ON) max TAI = +25°C D max •• Low Input Capacitance Low On-Resistance<br>25mΩ @ VGS = 10V 6.5A • Fast Switching Speed<br>Q1 30V<br>29mΩ @ VGS = 4.5V 6.1A • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)<br>Q2 -30V 28mΩ @ VGS = -10V -6.2A • Halogen and Antimony Free. “Green” Device (Note 3)<br>38mΩ @ VGS = -4.5V -5.3A • Qualified to AEC-Q101 Standards for High Reliability<br>Description Mechanical Data<br>This new generation MOSFET has been designed to minimize the on- • Case: SO-8<br>state resistance (RDS(ON)) and yet maintain superior switching • Case Material: Molded Plastic, “Green” Molding Compound.<br>performance, making it ideal for high efficiency power management UL Flammability Classification Rating 94V-0<br>applications. • Moisture Sensitivity: Level 1 per J-STD-020<br>• Terminal Connections: See Diagram<br>Applications • Terminals: Finish – Tin Finish annealed over Copper leadframe.<br>• DC-DC Converters Solderable per MIL-STD-202, Method 208 e3<br>• Power Management Functions • Weight: 0.074 grams (approximate)<br>: DIODES. &. ———<br>• Backlighting<br>D1 D2<br>S1 D1<br>Pin1 G1 D1<br>G1 G2<br>S2 D2<br>©) G2 D2 e S1 e S2<br>Top View Top View Equivalent Circuit<br>Pin Configuration<br>ADVANCE INFORMATION<br>NEW PRODUCT<br>ADVANCED INFORMATION<br>**----- End of picture text -----**<br>
## **Ordering Information** (Note 4)
|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMC3026LSD-13|SO-8|2,500/Tape&Reel|
- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
## **Marking Information**
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8 5 8 5<br>C3026LD C6040SD C3026LD C6040SD<br>YY WW YY WW<br>1 4 1 4<br>Coon<br>Chengdu A/T Site Shanghai A/T Site<br>**----- End of picture text -----**<br>
= Manufacturer’s Marking
C3026LD = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 14 = 2014) WW = Week (01 - 53)
~~|~~ YY YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)= Date Code Marking for SAT (Shanghai Assembly/ Test site)
1 of 9 **www.diodes.com**
DMC3026LSD Document number: DS36936 Rev.1 - 2
July 2014 © Diodes Incorporated
**DMC3026LSD**
**Maximum Ratings – Q1 and Q2** (@TA = +25°C, unless otherwise specified.)
|**Maximum Ratings – Q1 and Q2gs – Q1 and Q2s – Q1 and Q2 **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings – Q1 and Q2gs – Q1 and Q2s – Q1 and Q2 **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings – Q1 and Q2gs – Q1 and Q2s – Q1 and Q2 **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings – Q1 and Q2gs – Q1 and Q2s – Q1 and Q2 **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings – Q1 and Q2gs – Q1 and Q2s – Q1 and Q2 **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings – Q1 and Q2gs – Q1 and Q2s – Q1 and Q2 **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings – Q1 and Q2gs – Q1 and Q2s – Q1 and Q2 **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|Characteristic<br>~~QQ~~|||**Symbol**<br>~~QQ~~|**Q1**<br>~~QQ~~|**Q2**<br>~~QQ~~|**Units**<br>~~QQ~~|
|Drain-Source Voltage<br>~~>~~|||VDSS<br>~~>~~|30<br>~~>~~|-30<br>~~>~~|V<br>~~>~~|
|Gate-Source Voltage<br>~~>~~<br>~~BF~~|||VGSS<br>~~>~~|±20<br>~~>~~|±20<br>~~>~~|V<br>~~>~~|
|Continuous Drain Current (Note 6) VGS= 10V<br>~~BF~~|Steady<br>State<br>~~BFa~~|TA= +25°C<br>TA= +70°C<br>~~ee ee~~|ID<br>~~ee~~|6.5<br>5.2<br>~~ee~~|-6.2<br>-5.0<br>~~ee~~|A<br>~~ee~~|
||t<10s<br>~~BFa~~|TA= +25°C<br>TA= +70°C<br>~~ee ee~~|ID<br>~~ee~~|8.2<br>6.7<br>~~ee~~|-8.0<br>-6.5<br>~~ee~~|A<br>~~ee~~|
|Maximum BodyDiode Forward Current(Note 6)<br>~~BFa~~<br>~~ee ee~~<br>~~—~~<br>~~7~~|||IS<br>~~ee~~|2.2<br>~~ee ~~|-2.5<br> ~~ee~~|A<br>~~ee~~|
|Pulsed Drain Current(10µspulse, dutycycle = 1%)<br>~~—~~<br>~~7~~|||IDM|40|-40|A|
|Avalanche Current(Notes 7)L = 0.1mH<br>~~—~~<br>~~7~~|||IAS<br>~~ID~~|14.5<br>~~nD~~|22|A|
|Avalanche Energy (Notes 7)L = 0.1mH<br>~~—~~<br>~~7~~<br>~~nD~~|||EAS<br>~~nD~~<br>~~ID~~|10.5<br>~~nD~~<br>~~nD~~|25<br>~~nD~~|mJ<br>~~nD~~|
## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)
|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|1.2|W|
||TA= +70°C||0.8||
|Thermal Resistance, Junction to Ambient (Note 5)|Steadystate|RθJA|102|°C/W|
||t<10s||62||
|Total Power Dissipation (Note 6)|TA= +25°C|PD|1.6|W|
||TA= +70°C||1.0||
|Thermal Resistance, Junction to Ambient (Note 6)|Steadystate|RΘJA|78|°C/W|
||t<10s||47||
|Thermal Resistance, Junction to Case (Note 6)||RΘJC|14.5||
|Operating and Storage Temperature Range||TJ, TSTG|-55 to +150|°C|
**Electrical Characteristics – Q1** (@TA = +25°C, unless otherwise specified.)
|**Electrical Characteristics** **– Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **– Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **– Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **– Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **– Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **– Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **– Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~Cf~~|**Symbol**<br>~~Cf~~|**Min**<br>~~Cf~~|**Typ**<br>~~Cf~~|**Max**<br>~~Cf~~|**Unit**<br>~~Cf~~|**Test Condition**<br>~~Cf~~|
|**OFF CHARACTERISTICS(Note 8)**<br>~~—~~|||||||
|Drain-Source Breakdown Voltage<br>~~—~~|BVDSS<br>~~—~~|30<br>~~—~~|⎯<br>~~—~~|⎯<br>~~—~~|V<br>~~—~~|VGS= 0V, ID= 250µA<br>~~—~~|
|Zero Gate Voltage Drain Current<br>~~—~~|IDSS<br>~~—~~<br>~~I~~|⎯<br>~~—~~<br>~~ID I~~|⎯<br>~~—~~<br>~~I~~|1<br>~~—~~<br>~~(RO~~|µA<br>~~—~~<br>~~(RO~~|VDS= 24V, VGS= 0V<br>~~—~~<br>~~(RO~~|
|Gate-Source Leakage<br>~~I~~|IGSS<br>~~I~~<br>~~I~~|⎯<br>~~I~~<br>~~ID I~~|⎯<br>~~I~~<br>~~I~~|±100<br>~~I~~<br>~~(RO~~|nA<br>~~I~~<br>~~(RO~~|VGS=±20V, VDS= 0V<br>~~I~~<br>~~(RO~~|
|**ON CHARACTERISTICS(Note 8)**<br>~~I~~<br>~~ID I (RO~~<br>~~UI~~<br>~~TDI~~<br>~~i~~|||||||
|Gate Threshold Voltage<br>~~I~~<br>~~i~~|VGS(th)<br>~~I~~<br>~~UI~~<br>|1<br>~~I~~<br>~~TD~~<br>|⎯<br>~~I~~<br>~~I~~<br>|3<br>~~I~~<br>|V<br>~~I~~<br>|VDS= VGS, ID= 250µA<br>~~I~~<br>|
|Static Drain-Source On-Resistance<br>~~i~~|RDS (ON)<br>~~UI~~<br><br>~~I~~|⎯<br>~~TD~~<br>|19<br>~~I~~<br>|25<br>|mΩ<br><br>~~(OO~~|VGS= 10V, ID= 6A<br>|
|||⎯<br>~~TD~~<br><br>~~I~~|22<br>~~I~~<br><br>~~(OS~~|29<br><br>~~(OO~~||VGS= 4.5V, ID= 5A<br><br>~~(~~|
|Diode Forward Voltage<br>~~iID~~|VSD<br>~~UI~~<br>~~ID~~<br>~~I~~|⎯<br>~~TD ~~<br>~~ID~~<br>~~I~~|0.7<br> ~~I~~<br>~~ID~~<br>~~(OS~~|1.2<br>~~ID~~<br>~~(OO~~|V<br>~~ID~~<br>~~(OO~~|VGS= 0V, IS= 1.3A<br>~~ID~~<br>~~(~~|
|**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~I~~<br>~~I (OS(OO (~~<br>~~I~~|||||||
|Input Capacitance<br>~~nD~~<br>~~———~~|Ciss<br>~~nD~~<br>~~I~~<br>~~———~~|⎯<br>~~nD~~<br>~~———~~|641<br>~~nD~~<br>~~———~~|⎯<br>~~nD~~<br>~~———~~|pF<br>~~nD~~<br>~~———~~|VDS= 15V, VGS= 0V<br>f = 1.0MHz<br>~~———~~|
|Output Capacitance<br>~~———~~|Coss<br>~~I~~<br>~~———~~|⎯<br>~~———~~|66<br>~~———~~|⎯<br>~~———~~|||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~———~~|⎯<br>~~———~~|51<br>~~———~~|⎯<br>~~———~~|||
|Gate Resistance<br>~~———~~<br>~~——————~~|RG<br>~~———~~<br>~~I~~|⎯<br>~~———~~<br>~~I~~|2.2<br>~~———~~<br>~~I~~|⎯<br>~~———~~<br>~~e~~|Ω<br>~~———~~<br>~~e~~|VDS= 0V, VGS= 0V, f = 1.0MHz<br>~~———~~<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~nn~~<br>~~——————~~|Qg<br>~~nn~~<br>~~I~~|⎯<br>~~nn~~<br>~~I~~|6<br>~~nn~~<br>~~I~~|⎯<br>~~nn~~<br>~~e~~|nC<br>~~nn~~<br>~~e~~<br>~~ee~~|VDS= 15V, ID= 10A<br>~~ee~~<br>~~ee~~|
|Total Gate Charge(VGS= 10V)<br>~~——————~~|Qg<br>~~I~~|⎯<br>~~I~~|13.2<br>~~I~~|⎯<br>~~e~~|||
|Gate-Source Charge<br>~~——————~~|Qgs<br>~~I~~|⎯<br>~~I~~|1.7<br>~~I~~|⎯<br>~~e~~|||
|Gate-Drain Charge<br>~~——————~~<br>~~a—————~~|Qgd<br>~~I~~|⎯<br>~~I~~|2.2<br>~~I~~|⎯<br>~~e~~<br>~~ee~~|||
|Turn-On Delay Time<br>~~——————~~<br>~~a—————~~|tD(on)<br>~~I ~~|⎯<br> ~~I ~~|3.3<br> ~~I~~|⎯<br>~~e~~<br>~~ee~~|nS<br>~~e~~<br>~~ee~~|VGS= 10V, VDD= 15V, RG= 6Ω,<br>ID= 1A<br>~~ee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~a—————~~|tr|⎯|4.4|⎯<br>~~ee~~|||
|Turn-Off Delay Time<br>~~—————~~|tD(off)|⎯|22.3|⎯<br>~~ee~~|||
|Turn-Off Fall Time<br>~~—————~~|tf|⎯|5.3|⎯<br>~~ee~~|||
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. UIS in production with L = 0.1mH, starting TA = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2 of 9
DMC3026LSD Document number: DS36936 Rev.1 - 2
July 2014
**www.diodes.com**
© Diodes Incorporated
**DMC3026LSD**
|**Electrical Characteristics** **– Q2** (@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics** **– Q2** (@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics** **– Q2** (@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics** **– Q2** (@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics** **– Q2** (@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics** **– Q2** (@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics** **– Q2** (@TA= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~a~~|**Symbol**<br>~~GG~~|**Min**<br>~~GG~~|**Typ**<br>~~GG~~|**Max**<br>~~GG~~|**Unit**<br>~~GG~~|**Test Condition**<br>~~GG~~|
|**OFF CHARACTERISTICS(Note 8)**<br>~~TT~~|||||||
|Drain-Source Breakdown Voltage<br>~~pO~~|BVDSS|-30|⎯|⎯|V|VGS= 0V, ID= -250µA|
|Zero Gate Voltage Drain Current<br>~~pO~~<br>~~po~~|IDSS|⎯|⎯|-1|µA|VDS= -24V, VGS= 0V|
|Gate-Source Leakage<br>~~pO~~<br>~~po~~|IGSS|⎯|⎯|±100|nA|VGS=±20V, VDS= 0V|
|**ON CHARACTERISTICS(Note 8)**<br>~~po~~<br>~~pO~~|||||||
|Gate Threshold Voltage<br>~~pO~~<br>~~po~~|VGS(th)<br>~~ce~~|-1<br>~~ce~~|⎯<br>~~ee~~|-3<br>~~ee~~|V<br>~~eee~~|VDS= VGS, ID= -250µA<br>~~eee~~|
|Static Drain-Source On-Resistance<br>~~pO~~<br>~~ee~~<br>~~po~~|RDS(ON)<br>~~ee~~<br>~~ce~~|⎯<br>~~ee~~<br>~~ce~~|21<br>~~ee~~<br>~~ee~~|28<br>~~ee~~<br>~~ee~~|mΩ<br>~~ee~~<br>~~eee~~|VGS= -10V, ID= -6A<br>~~ee~~<br>~~eee~~|
|||⎯<br>~~ee~~<br>~~ce~~|29<br>~~ee~~<br>~~ee~~|38<br>~~ee~~<br>~~ee~~||VGS= -4.5V, ID= -5A<br>~~ee~~<br>~~eee~~|
|Diode Forward Voltage<br>~~po~~|VSD<br>~~ce~~|⎯<br>~~ce~~|-0.7<br>~~ee~~|-1.2<br>~~ee~~|V<br>~~eee~~|VGS= 0V, IS= -1.3A<br>~~eee~~|
|**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~ce ee ee eee~~<br>~~po~~|||||||
|Input Capacitance<br>~~a~~|Ciss<br>~~a~~|⎯<br>~~a~~|1241<br>~~a~~|⎯<br>~~a~~|pF|VDS= -15V, VGS= 0V<br>f = 1.0MHz|
|Output Capacitance|Coss|⎯|146|⎯|||
|Reverse Transfer Capacitance|Crss|⎯|110|⎯|||
|Gate Resistance<br>~~pf~~|RG<br>~~pf~~|⎯<br>~~pf~~|14.8<br>~~pf~~|⎯<br>~~pf~~|Ω<br>~~pf~~|VDS= 0V, VGS= 0V, f = 1.0MHz<br>~~pf~~|
|Total Gate Charge(VGS= -4.5V)<br>~~a~~|Qg<br>~~a~~|⎯<br>~~a~~|10.9<br>~~a~~|⎯<br>~~a~~|nC|VDS= -15V, ID= -7A|
|Total Gate Charge(VGS= -10V)<br>~~Ge~~|Qg<br>~~Ge~~|⎯<br>~~Ge~~|22<br>~~Ge~~|⎯<br>~~Ge~~|||
|Gate-Source Charge|Qgs|⎯|3.5|⎯|||
|Gate-Drain Charge|Qgd|⎯|4.7|⎯|||
|Turn-On Delay Time<br>~~a~~|tD(on)<br>~~a~~|⎯<br>~~a~~|9.7<br>~~a~~|⎯<br>~~a~~|nS|VGS= -10V, VDD= -15V, RGEN= 6Ω,<br>ID= -7A|
|Turn-On Rise Time<br>~~a~~|tr<br>~~a~~|⎯<br>~~a~~|17.1<br>~~a~~|⎯<br>~~a~~|||
|Turn-Off Delay Time|tD(off)|⎯|60.5|⎯|||
|Turn-Off Fall Time<br>~~ee~~|tf<br>~~ee~~|⎯<br>~~ee~~|40.4<br>~~ee~~|⎯<br>~~ee~~|||
Notes: 8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
3 of 9 **www.diodes.com**
DMC3026LSD Document number: DS36936 Rev.1 - 2
July 2014 © Diodes Incorporated
**DMC3026LSD**
**==> picture [488 x 672] intentionally omitted <==**
**----- Start of picture text -----**<br>
30.0 30<br>VGS = 10V VGS = 5.0V VDS = 5.0V<br>25.0 fe V GS = 4.5V 25 fp<br>VGS = 4.0V VGS = 3.0V<br>20.0 V GS = 3.5V 20<br>a: _ ERanE<br>15.0 15<br>fa ae<br>10.0 (aaa 10 Seeee ee<br>TA = 150°C TA = 85°C<br>5.0 VGS = 2.5V 5 T A = 125°C TA = 25 ° C<br>fo Seeee TA lee = -55°C<br>0.0 -— 0 Weae an<br>0 0.5 1 1.5 2 0 0.5 1 1.5 2 2.5 3 3.5 4<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>0.05 0.05<br>VGS = 4.5V<br>0.045 Pf [ | fF 0.045 ee ee<br>0.04 0.04 T A = 150°C<br>0.035 0.035 TA = 125°C<br>FERRE) = ERE<br>0.03 0.03 T A = 85°C<br>Pf | | ff ee ee<br>0.025 P| | ft ff 0.025 _<br>VGS = 4.5V TA = 25°C<br>0.02 Pf 0.02 P| |dT<br>0.015 Se V GS = 10V 0.015 i ee T A = -55°C<br>0.01 0.01<br>0.005 PERE) 0.005 EEE<br>0 PF | | | ff 0 Fo} | ft |<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A)<br>Figure 3 Typical On-Resistance vs. Figure 4 Typical On-Resistance vs.<br>Drain Current and Gate Voltage Drain Current and Temperature<br>1.8 0.04<br>1.6 V GS ID 4.5= 5A= V 0.035 VGSID = 5A= 4.5V<br>0.03<br>Spethy4 TL LLL TI<br>1.4<br>x EERE se<br>0.025<br>VGS 10= V<br>1.2 ID = 10A 0.02 VIGSD = 10A 10= V<br>0.015<br>foEaaVae CELLee LE<br>1<br>0.01<br>EPA =e<br>0.8<br>0.005<br>7 ert ttt tt<br>0.6 TE ELE 0 EE E ELEE<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 5 On-Resistance Variation with Temperature Figure 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>D D<br> I I<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE (<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
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DMC3026LSD Document number: DS36936 Rev.1 - 2
July 2014 © Diodes Incorporated
**www.diodes.com**
**DMC3026LSD**
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3<br>2.5<br>2<br>ID = 1mA<br>1.5<br>ID = 250µA<br>1<br>Lt RS<br>0.5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C)<br>Figure 7 Gate Threshold Variation vs. Ambient Temperature<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>V<br>**----- End of picture text -----**<br>
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10000 SSSa GGSSS SSS GGSSS SSS(|<br>T A = 150°C<br>esaes<br>1000 ee eee<br>—— TA = 125°C<br>oe<br>100 —<br>eS——————————SS(SS<br>TA = 85°C<br>10<br>EEE TA = 25°C<br>1 SSS———<br>te|<br>—————<br>0.1 eea eeee<br>0 10 20 30<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Typical Drain-Source Leakage Current vs. Voltage<br>10<br>8<br>6 VID DS 10= = 15VA<br>4<br>2<br>0<br>0 2 4 6 8 10 12 14<br>Qg [, TOTAL GATE CHARGE ] (nC)<br>Figure 11 Gate Charge<br>, DRAIN LEAKAGE CURRENT (µA)<br>IDSS<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>
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30<br>25<br>20<br>TA = 25°C<br>15<br>10<br>Ree<br>5<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2<br>VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 8 Diode Forward Voltage vs. Current<br>10000 ——————————<br>f = 1MHz<br>oeeeee<br>|a| | | | | | | | fy |<br>1000 Ptepf {|tT TT TT Ciss<br>—— _}_}_}_}_}_j_|<br>ee<br>100 |pkhNat SSREEE C oss<br>———————————<br>a || C | rss ft<br>Po<br>| [| | | [| | | | ft ff<br>10 Pit TT tT y t fy<br>0 2 4 6 8 10 12 14 16 18 20<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 10 Typical Junction Capacitance<br>100<br>RDS(on)<br>Limited heHN bel Sh ee eee<br>10 RUT NTNENT SSTTTT<br>ee DC NANO OR PEN<br>mo PW OINSENCN = 10s CPS<br>1 —RON PW = 1s<br>SERee TSN PW = 100ms NARS SEE<br>Lt | PW = 10ms /| NINDS NIMBE<br> EL ISIN<br>0.1 all P W = 1ms NON lll<br>TTVJA GS ( = 25max = 10V) ° =C 150°C [|a PW = 100µs ee<br>Single Pulse<br>0.01 DUT on 1 * MRP Board PCr Cerin<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 12 SOA, Safe Operation Area<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>
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20.0 20<br>VGS = -10V<br>VGS = -3.5V VDS = -5.0V<br>15.0 VGS = -5.0V 15<br>VGS = -4.5V<br>VGS = -4.0V<br>VGS = -3.0V<br>10.0 10<br>VV | pe<br>5.0 5 T A = 150°C TA = 85°C<br>VGS = -2.5V TA = 125°C TA = 25°C<br>TA = -55°C<br>0.0 {—Ae 0 aae<br>0 1 2 3 4 5 0 1 2 3 4 5<br>VDS, DRAIN -SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 13 Typical Output Characteristics Figure 14 Typical Transfer Characteristics<br>0.05 0.05<br>VGS = -4.5V TA = 125°C TA = 150°C<br>0.04 0.04<br>TA = 85°C<br>0.03 VGS = -4.5V 0.03 T A = 25°C<br>PEPE<br>VGS = -10V TA = -55°C<br>0.02 0.02 EEL ELLE EEL<br>0.01 0.01 -EELEEELEL<br>0 0<br>0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN SOURCE CURRENT (A) ID, DRAIN SOURCE CURRENT (A)<br>Figure 15 Typical On-Resistance vs. Figure 16 Typical On-Resistance vs.<br>Drain Current and Gate Voltage Drain Current and Temperature<br>1.81.6 CHOCO V IDGS = -10A = -10V 0.050.04<br>VGS -5= V<br>1.4 ID -5= A<br>cored 0.03 Eee<br>VGS = -5V<br>1.2 ID = -5A<br>VGS = -10V<br>0.02 I D = -10A<br>1 PO) beter<br>0.01<br>0.8 cer EEE<br>0.6 0<br>-50 Toon -25 0 25 50 75 100 125 150 Ss CEE -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 17 On-Resistance Variation with Temperature Figure 18 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>RDS(ON) RDS(ON)<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED) , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
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3 20<br>2.5<br>15<br>2<br>SaGe0n0n -ID = 1mA HIE<br>1.5 SS -I D = 250µA 10 h<br>TA= 150°C<br>1<br>TA= 125°C<br>HHT EERS 5 fl] TA= 25°C<br>0.5 TA= 85°C<br>LEE ELE Hf TA= -55°C<br>0 PEEL EEE 0 DWT<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1 1.2<br>TA, AMBIENT TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 19 Gate Threshold Variation vs. Ambient Temperature Figure 20 Diode Forward Voltage vs. Current<br>10000 10000<br>SSS SSS TA = 150°C a f = 1MHz SSSS S|<br>1000 _————— TA = 125°C eee Ciss<br>SSS —Ee Se 1000 TO<br>100 TA = 85°C<br>—— Se<br>10 aoe T A = 25°C RSSSS Coss<br>100<br>C rss<br>ee ———<br>1 a a aa as<br>a SC<br>0.1 es 10 PF | | [| [| ff<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>-VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 21 Typical Drain-Source Leakage Current vs. Voltage Figure 22 Typical Junction Capacitance<br>10 100<br>RDS(on)<br>98 Ff) Uf dT UY UY CCRT Limited OES<br>10<br>7<br>6 V DS = -15V-15V15V DC<br>/ IDD = -7A me SRNR OK<br>5 1 PW = 10s<br>PW = 1s<br>43 PW = 100ms<br>3 FTA [fd FGA PW = 10ms ANSRISSSETHT<br>0.1 TJ(max) = 150°C PW = 1ms<br>2 TA = 25°C<br>V GS = -10V P W = 100µs<br>10 Single Pulse<br>DUT on 1 * MRP Board<br>0 Vy | | [| | | 0.01 PPE<br>0 5 10 15 20 25 0.1 1 10 100<br>Qg, TOTAL GATE CHARGE (nC)g, TOTAL GATE CHARGE (nC), TOTAL GATE CHARGE (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 24 SOA, Safe Operation Area<br>, SOURCE CURRENT (A)<br>, GATE THRESHOLD VOLTAGE (V) IS<br>GS(TH)<br>V<br>, LEAKAGE CURRENT (nA)<br>, JUNCTION CAPACITANCE (pF)<br>IDSS CT<br>, DRAIN CURRENT (A)<br>ID<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>
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10<br>898 Ff) Uf dT UY UY<br>7<br>6 V DS = -15V-15V15V<br>/ IDD = -7A<br>5<br>43 FTA [fd<br>2<br>10 Vy | | [| | |<br>0 5 10 15 20 25<br>Qg, TOTAL GATE CHARGE (nC)g, TOTAL GATE CHARGE (nC), TOTAL GATE CHARGE (nC)<br>Figure 23 Gate-Charge Characteristics<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>
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**DMC3026LSD** [
## rirSO
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1<br>D = 0.9<br>D = 0.7<br>Sa aia re aisiieereiiiioeeee see teeta acne eee<br>FHC D = 0.5 LE Oem<br>D = 0.3 a _<br>CM ETE TPIT TeerIEE<br>0.1 ETTeeLOAM Lt rrrome dUIEFETI LEE LUT<br>EE D = 0.1 ee<br>Sa<br>D = 0.05<br>Fy Teh<br>08 a oY<br>D = 0.02<br>Saeed NMAGLIDSE A AIMMOIUTIAEROGITIGOO(IIT(OMMOGITIOM MOTI<br>0.01 a 7A<br>D = 0.01<br>eres Aare een LTE CAL RTH TT<br>ee<br>D = 0.005<br>EPCRA TIE RθJA(t) = r(t) * RθJA LITT<br>| mall<br>RθJA = 102°C/W<br>Single Pulse Duty Cycle, D = t1/ t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIMES (sec)<br>Figure 25 Transient Thermal Resistance<br>ge Outline Dimensions e Outline Dimensions<br>Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.<br>SO-8<br>Dooag | Dim Min Max<br>A - 1.75<br>A1 0.10 0.20<br>A2 1.30 1.50<br>E1 E<br>Gauge Plane A3 0.15 0.25<br>L_| | [| | ; A1 o i ne L ! 1 Seating Plane b 0.3 0.5<br>D 4.85 4.95<br>Too Detail ‘A’ E1 E 5.90 3.85 6.10 3.95<br>[| L LJ i | 1 h 7°~9° e 1.27 Typ<br>45° h - 0.35<br>L 0.62 0.82<br>Detail ‘A’<br>A2 A A3 θ 0° 8°<br>All Dimensions in mm<br>UPEe e b , , PRS<br>D<br>r(t), TRANSIENT THERMAL RESISTANCE<br>0.254<br>**----- End of picture text -----**<br>
## **Package Outline Dimensions e Outline Dimensions**
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
## **Suggested Pad Layout**
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
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X<br>Toe G<br>C1<br>C2<br>Y<br>**----- End of picture text -----**<br>
|**Dimensions**|**Value (in mm)**|
|---|---|
|**X**|0.60|
|**Y**|1.55|
|**C1**|5.4|
|**C2**|1.27|
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## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
## **LIFE SUPPORT**
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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Updated at June 9, 2026
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