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DMC3025LSD-13
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 6.5 A, 6.5 A, 0.02 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.5W
- Power Dissipation P Channel: 1.5W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 6.5A
- Continuous Drain Current Id P Channel: 6.5A
- Drain Source On State Resistance N Channel: 0.02ohm
- Drain Source On State Resistance P Channel: 0.045ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.191 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**DMC3025LSD** S. **30V COMPLEMENTARY ENHANCEMENT MODE MOSFET** ~~—~~
## **Product Summary**
|**Device**|**V(BR)DSS**|**RDS(ON) max**|**Package**|**ID MAX**<br>**TA = +25°C**|
|---|---|---|---|---|
|N-Channel|30V|20mΩ @VGS= 10V|SO-8<br>= -4.5V|8.5A|
|||32mΩ @VGS= 4.5V||7.0A|
|P-Channel|-30V|45mΩ @VGS= -10V||-5.5A|
|||85mΩ @VGS= -4.5V||-4.1A|
## **Features**
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)**
- **Halogen and Antimony Free. “Green” Device (Note 3)**
- **Qualified to AEC-Q101 Standards for High Reliability**
## **Description**
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
## **Mechanical Data**
- Case: SO-8
- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
## **Applications**
- DC Motor Control
- DC-AC Inverters
- Terminal Connections Indicator: See Diagram
- Terminals: Finish Matte Tin Annealed Over Copper Leadframe. Solderable per MIL-STD-202, Method 208
- Weight: 0.008 grams (Approximate)
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SO-8 D2 D1<br>S2 7 EH D2<br>G2 D2<br>G2 G1<br>S1 G D1<br>G1 D1 S2 S1<br>§<br>Q2 N-CHANNEL MOSFET Q1 P-CHANNEL MOSFET<br>Top View Pin Configuration<br>**----- End of picture text -----**<br>
Equivalent Circuit
## **Ordering Information** (Note 4)
|**Ordering Informationg Information Information**(Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMC3025LSD-13|SO-8|2,500/Tape &Reel|
- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
## **Marking Information**
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Top View<br>8 5<br>PE EET TE<br>Logo<br>C3025LD Part no.<br>YY WW<br>Xth week: 01 ~ 53<br>Year: “11” = 2011<br>1 4<br>PP LE LI ul<br>**----- End of picture text -----**<br>
1 of 10 **www.diodes.com**
DMC3025LSD Document number: DS35717 Rev. 7 - 2
February 2015 © Diodes Incorporated
**DMC3025LSD**
**Maximum Ratings N-CHANNEL– Q2** (@TA = +25°C, unless otherwise specified.)
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||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|GC|Characteristic|Symbol|Value|Units|
|a|Drain-Source Voltage|VDSS|30|V|
|a|Gate-Source Voltage|VGSS|±20|V|
|Steady|TA = +25°C|6.5|
|State|TA = +70°C|ID|5.1|A|
|pF|Continuous Drain Current (Note 5) VGS = 10V|re|t<10s|TTAA = +25 = +70°°CC|ID|8.5 6.8|A|
|Steady|TA = +25°C|5.3|
|State|TA = +70°C|ID|4.1|A|
|a|Continuous Drain Current (Note 5) VMaximum Continuous Body Diode Forward Current (Note 5) GS = 4.5V|ee|t<10s|TTAA = +25 = +70°°CC|eeee|IIDS|eeeee|7.0 5.5 2|eeeeee|A A|
|or|Pulsed Drain Current (10µs pulse, duty cycle = 1%)|IDM|60|A|
|a|Pulsed Body Diode Current (10µs pulse, duty cycle = 1%)|ISM|60|A|
|a|Avalanche Current (Note 7) L = 0.1mH|IAS|14|A|
|a|Avalanche Energy (Note 7) L = 0.1mH|EAS|10|mJ|
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**Maximum Ratings P-CHANNEL– Q1** (@TA = +25°C, unless otherwise specified.)
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|---|---|---|---|---|---|---|---|---|---|---|
|a|Characteristic|OC|Symbol|Value|Units|
|a|Drain-Source Voltage|VDSS|-30|V|
|a|Gate-Source Voltage|VGSS|±20|V|
|Steady|TA = +25°C|-4.2|
|State|TA = +70°C|ID|-3.2|A|
|a|Continuous Drain Current (Note 5) VGS = -10V|t<10s|TTAA = +25 = +70°°CC|ID|-5.5 -4.3|A|
|re|Steady|TA = +25°C|ee|ee|-3.5|eee|
|State|TA = +70°C|ID|-2.3|A|
|ESa|Continuous Drain Current (Note 5) VMaximum Continuous Body Diode Forward Current (Note 5) GS = -4.5V|a|t<10s|TTAA = +25 = +70|ee|°°CC|IIDS|-4.1 -3.2 -2|ee|A A|
|a|Pulsed Drain Current (10µs pulse, duty cycle = 1%)|IDM|-30|A|
|Pulsed Body Diode Current (10µs pulse, duty cycle = 1%)|ISM|-30|A|
|or|Avalanche Current (Note 7) L = 0.1mH|IAS|-14|A|
|a|Avalanche Energy (Note 7) L = 0.1mH|es|EAS|10|mJ|
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## **Thermal Characteristics**
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||||||
|---|---|---|---|---|
|Characteristic|Symbol|Value|Units|
|TA = +25°C|1.2|
|Total Power Dissipation (Note 6)|PD|W|
|TA = +70°C|0.77|
|Steady State|104|
|Thermal Resistance, Junction to Ambient (Note 6)|t<10s|RθJA|62|°C/W|
|TA = +25°C|1.5|
|Total Power Dissipation (Note 5)|PD|W|
|TA = +70°C|0.95|
|Steady State|83|
|Thermal Resistance, Junction to Ambient (Note 5)|t<10s|RθJA|49|°C/W|
|Thermal Resistance, Junction to Case (Note 5)|RθJC|15|
|Operating and Storage Temperature Range|TJ, TSTG|-55 to +150|°C|
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Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
2 of 10 **www.diodes.com**
DMC3025LSD Document number: DS35717 Rev. 7 - 2
February 2015 © Diodes Incorporated
**DMC3025LSD**
**Electrical Characteristics N-CHANNEL– Q2** (@TA = +25°C, unless otherwise specified.)
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|---|---|---|---|---|---|---|---|---|---|---|
|Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition|
|pe|OFF CHARACTERISTICS (Note 8)|
|Drain-Source Breakdown Voltage|BVDSS|30|—|—|V|VGS = 0V, ID = 250µA|
|CGCG|Zero Gate VoltaGate-Source Leakage ge Drain Current|IIGSSDSS|——|——|GOGO|±1 1|GOGO|µµA A|VVDSGS = 30V, V = ±20V, VGSDS = 0V = 0V|
|ON CHARACTERISTICS (Note 8)|
|CG|Gate Threshold Voltage|VGS(th)|1.0 —|15 —|CO|2.0 20|GO|V|VVDSGS = V = 10V, IGS, IDD = 250 = 7.4A µA|
|a|Static Drain-Source On-Resistance|RDS (ON)|—|23|32|mΩ|VGS = 4.5V, ID = 6A|
|CGa|Forward Transfer Admittance Diode Forward Voltage||VYSDfs||——|GOGO|0.70 8|GO|1.2 —|GO|S V|VVDSGS = 5V, I = 0V, IDS = 10A = 1A|
|DYNAMIC CHARACTERISTICS (Note 9)|
|a|Input Capacitance|Ciss|—|501|—|
|Output Capacitance|Coss|—|72|—|pF|VDS = 15V, VGS = 0V,|
|f = 1.0MHz|
|Reverse Transfer Capacitance|Crss|—|57|—|
|GO|Gate Resistance Total Gate Charge (VGS = 4.5V)|QRgg|——|1.84 4.6|——|GO|Ω|VDS = 0V, VGS = 0V, f = 1.0MHz|
|Total Gate Charge (VGS = 10V)|Qg|—|9.8|—|nC|VDS = 15V, ID = 10A|
|a|Gate-Source Charge|Qgs|—|1.6|—|
|a|Gate-Drain Charge|Qgd|—|2.0|—|jo|
|Turn-On Delay Time|tD(on)|—|3.9|—|
|Turn-On Rise Time|tr|—|4.2|—|VDD = 15V, VGS = 10V,|
|ns|
|a|Turn-Off Delay Time|tD(off)|—|16.6|—|RG = 6Ω, ID = 1A|
|a|Turn-Off Fall Time|tf|—|5.8|—|jo|
|a|Reverse Recovery Time|trr|—|5.5|—|ns|
|Reverse Recovery Charge|Qrr|ee|—|2.6|—|nC|IF = 12A, di/dt = 500A/µs|
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DMC3025LSD Document number: DS35717 Rev. 7 - 2
February 2015 © Diodes Incorporated
**DMC3025LSD**
**Electrical Characteristics P-CHANNEL – Q1** (@TA = +25°C, unless otherwise specified.)
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|---|---|---|---|---|---|---|---|---|
|pT|Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition|
|OFF CHARACTERISTICS (Note 8)|
|OO|Drain-Source Breakdown Voltage|BVDSS|-30|—|—|V|VGS = 0V, ID = -250µA|
|Zero Gate Voltage Drain Current|IDSS|—|—|-1|µA|VDS = -30V, VGS = 0V|
|i|Gate-Source Leakage|IGSS|—|—|±100|nA|VGS = ±20V, VDS = 0V|
|ON CHARACTERISTICS (Note 8)|
|—_—_——|Gate Threshold Voltage|VGS(th)|-1.0|—|-2.0|V|VDS = VGS, ID = -250µA|
|ee|Static Drain-Source On-Resistance|RDS (ON)|——|38 65|45 85|mΩ|VVGSGS = -10V = -4.5V,, I IDD = -5.2A = -4A|
|Forward Transfer Admittance||Yfs||—|5|—|S|VDS = -5V, ID = -5.2A|
|————————————|Diode Forward Voltage|VSD|—|-0.7|-1.2|V|VGS = 0V, IS = -1A|
|DYNAMIC CHARACTERISTICS (Note 9)|
|a|Input Capacitance|Ciss|—|590|—|pF|
|Output Capacitance|Coss|—|69|—|pF|VDS = -25V, VGS = 0V,|
|f = 1.0MHz|
|i|Reverse Transfer Capacitance|Crss|—|53|—|pF|
|Gate Resistance|Rg|—|11|—|Ω|VDS = 0V, VGS = 0V, f = 1.0MHz|
|CG|Total Gate Charge (VGS = 4.5V)|Qg|—|5.1|—|nC|
|a|Total Gate Charge (VGS = 10V)|Qg|—|10.5|—|nC|VDS = -15V, ID = -6A|
|Gate-Source Charge|Qgs|—|1.8|—|nC|
|Gate-Drain Charge|Qgd|—|1.9|—|nC|
|——_—|Turn-On Delay Time|tD(on)|—|6.8|—|e|ns|e|
|Turn-On Rise Time|tr|—|4.9|—|ns|VDD = -15V, VGS = -10V,|
|Turn-Off Delay Time|tD(off)|—|28.4|—|ns|RG = 6Ω, ID = -1A|
|Turn-Off Fall Time|tf|—|12.4|—|ns|
|———_—i|Reverse RecoverReverse Recoveryy Time Charge|Qtrrrr|——|14 11|——|eee|nC ns|IF = 12A, di/dt = 500A/µs|
|Notes:|7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.|
|8. Short duration pulse test used to minimize self-heating effect.|
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9. Guaranteed by design. Not subject to product testing.
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DMC3025LSD Document number: DS35717 Rev. 7 - 2
February 2015 © Diodes Incorporated
**DMC3025LSD**
## **N-CHANNEL**
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30 30<br>25 25 V DS = 5.0V<br>20 a; 20 TTT<br>jaa fe<br>15 15<br>Wo<br>10 10<br>Herr) = Cy TA = 150°C<br>5 5 TA = 125°C T A = 85°C<br>TA = 25°C<br>TA = -55°C<br>0 0<br>0 POE 0.5 1.0 1.5 2.0 2.5 3.0 = [ee 0 1 2 3 4 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristics<br>0.030 0.10<br>0.025<br>Le 0.08 TELE<br>et _ VGS = 4.5V<br>0.020<br>0.06<br>0.015<br>= VGS = 10V 0.04 | I D = 10A<br>0.010<br>TTT L<br>0.02<br>0.005 Teer] OAL<br>0 ee 0<br>0 5 10 15 20 3 4 5 6 7 8 9 10<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure. 3 Typical On-Resistance vs. Figure 4. Typical On-Resistance vs.<br>Drain Current and Gate Voltage Drain Current and Gate Voltage<br>0.08 1.6<br>0.07 V GS = 4.5V VGS 10= V<br>ID = 10A<br>1.4<br>0.06<br>a TA = 150°C eeeeeee<br>0.05 T A = 125°C 1.2 TY V GS = 4.5V<br>ID = 5A<br>coer 2<br>0.04<br>TA = 85°C<br>a=<br>1.0<br>0.03<br>= TA = 25°C a<br>0.02 T A = -55°C<br>0.8<br>0.01 SSS<br>0 TEE 0.6 LELELLL<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 5. Typical On-Resistance vs. Figure 6. On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>D D<br> I I<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE ( ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
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DMC3025LSD Document number: DS35717 Rev. 7 - 2
February 2015 © Diodes Incorporated
**DMC3025LSD** rt*~‘*zd
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0.040 2.0<br>1.8<br>0.035 PF] | tt tt do eee<br>EEL VGS = 4.5V LeA 1.6 SE— ~ I D = 1mA<br>0.030 ID = 5A 1.4<br>0.025 eer ptf Pat ID = 250µA<br>1.2<br>0.020 1.0<br>| tee] | fle Pfr PS<br>0.8<br>0.015 VGS 10= V<br>ID = 10A 0.6<br>0.010 Sete<br>oe 0.4 ER<br>0.005<br>0.2<br>0 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 7. On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Ambient Temperature<br>30 eee 10,000 ———<br>25<br>20 tL T A = 25°C le 1,000 aee<br>C iss<br>15 | EE — , —————=6| rT — —————[<br>NK |ff<br>10 100 SEee— Coss {|_|<br>===ee ee Crss |<br>5<br>f = 1MHz<br>0 et | LA 10 esoO<br>0 0.2 0.4 0.6 0.8 1.0 1.2 0 5 10 15 20 25 30<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>100<br>RDS(on)<br>Limited PW = 10µs<br>V DS = 15V THe PIES il<br>ID 10= A 10<br>6 ra DC PRA SAELHH<br>1 PW = 10s<br>P W = 1s<br>P W = 100ms<br>| | [[ PW = 10ms PNB<br>0.1<br>TJ(max) = 150°C PW = 1ms<br>T A = 25°C PW = 100µs<br>Single Pulse<br>a ee<br>0 0.01 eelll<br>0 2 4 6 8 10 12 0.1 1 10 100<br>Qg [, TOTAL GATE CHARGE ] (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge<br>Figure 12. SOA, Safe Operation Area<br>)Ω<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>GS(th)<br>V<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS , JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>ID<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>
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DMC3025LSD Document number: DS35717 Rev. 7 - 2
February 2015 © Diodes Incorporated
**DMC3025LSD**
**P-CHANNEL**
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20 VGS = -10V VGS = -5.0V 20<br>VDS = -5.0V<br>15 15<br>foe VGS = -4.5V<br>VGS = -4.0V<br>10 10<br>Zameen VGS = -3.5V<br> f<br>5 5<br>c= VGS = -3.0V TA = 125TA = 150°C °C TA = 25TA = 85°C°C At<br>0 fH VGS = -2.5V 0 TA = -55°C<br>0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5<br>-VDS, DRAIN -SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 13. Typical Output Characteristics Figure 14. Typical Transfer Characteristics<br>0.12 TEE 0.10<br>0.10<br>0.08<br>0.08<br>BERRREEP ae 0.06 A<br>0.06<br>fitter PSO<br>0.04<br>0.04<br>iusto 0.02<br>0.02<br>0 0<br>0 eT 4 EEEEEL 8 12 16 EL 20 3 LEE 4 5 6 EEL 7 8 9 10<br>-ID, DRAIN SOURCE CURRENT (A) -VGS, GATE SOURCE VOLTAGE (V)<br>Figure 15. Typical On-Resistance vs. Figure 16. Typical On-Resistance vs.<br>Drain Current and Gate Voltage Drain Current and Gate Voltage<br>0.10 1.7<br>VGS = -4.5V 1.5 TE LELEL<br>0.08<br>1.3 LILLY<br>0.06 TA = 150°C<br>1.1<br>TA = 125°C Pt |ee<br>0.04 T A = 85°C<br>TA = 25°C 0.9 Fea<br>TA = -55°C<br>0.02<br>0.7 aT]| | tT<br>0 0.5 FELL LE<br>0 5 10 15 20 -50 -25 0 25 50 75 100 125 150<br>-ID, DRAIN SOURCE CURRENT (A) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 17. Typical On-Resistance vs. Figure 18. On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>D D<br>-I -I<br>)Ω )Ω<br>,DRAIN-SOURCE ON-RESISTANCE ( ,DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE( ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
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DMC3025LSD Document number: DS35717 Rev. 7 - 2
February 2015 © Diodes Incorporated
**DMC3025LSD**
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0.10 2.0<br>1.8<br>0.08 TTI IIL 1.6 i<br>1.4 oT eeT ee ee<br>-= SS<br>0.06 - VIDGS -5= -4.= A 5V 1.2 re SN<br>1.0<br>pan _ TEES<br>0.04 0.8<br>Te a<br>VGS = -10V<br>ID -10= A 0.6<br>0.02 p>oT aernn 0.4 “EEETEEPLeeet,TEEPLeeet,<br>0.2<br>0 PTT TT yy 0 ~““ TE ELL E LLLeeiLILeeiLILI<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125<br>TJ, JUNCTION TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)A, AMBIENT TEMPERATURE (°C), AMBIENT TEMPERATURE (°C)<br>Figure 19. On-Resistance Variation with Temperature Figure 20. Gate Threshold Variation vs. Ambient Temperature<br>20 10,000<br>_—————<br>f = 1MHz<br>eseses<br>16<br>1,000<br>12 _ 1,225 /po esaeeeeeeeeaeeeeee es es es es<br>C issss<br>eses eses es es<br>8<br>100 SS C oss<br>4 ——— C rss<br>eseeeses<br>0 (EYP) 10 eeeses rs es<br>0.4 0.6 0.8 1.0 1.2 1.4 0 5 10 15 20 25<br>-VSD, SOURCE-DRAIN VOLTAGE (V) yy, = 6RBREE -VDS, DRAIN-SOURCE VOLTAGE (V)DS, DRAIN-SOURCE VOLTAGE (V), DRAIN-SOURCE VOLTAGE (V)<br>Figure 21. Diode Forward Voltage vs. Current Figure 22. Typical Junction Capacitance<br>10 100<br>RDS(on)DS(on)<br>Limited P W = 10µµs<br>8 |] tl Ly = tttLtLt eeeehSNehSNSN |<br>10<br>6<br>DC<br>Ip= - 6A 7 | a SEALE ENE ENE<br>1 PW = 10sW = 10s = 10s<br>PW = 1sW = 1s = 1s<br>4 P W = 100ms<br>_/ URSRS PWW = 10ms INHH<br>0.1 T = 150°C PWW = 1ms 1ms<br>2 TJ(max)J(max) A = +25°C PW = 100µsW = 100µs = 100µsµss<br>Single Pulse<br>eeeeee<br>0 0.01 ll<br>0 2 4 6 8 10 12 0.1 1 10<br>Qg, TOTAL GATE CHARGE (nC) -VDS, DRAIN-SOURCE VOLTAGE (V)DS, DRAIN-SOURCE VOLTAGE (V), DRAIN-SOURCE VOLTAGE (V)<br>Figure 23. Gate-Charge Characteristics Figure 24. SOA, Safe Operation Area<br>)Ω<br>, GATE THRESHOLD VOLTAGE(V)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>GS(TH)<br>DS(on) V<br>R<br>, SOURCE CURRENT (A)<br>S<br>-I , JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>
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2.0<br>1.8<br>1.6 i<br>1.4 oT eeT ee ee<br>SS<br>1.2<br>re SN<br>1.0<br>TEES<br>0.8<br>a<br>0.6<br>0.4 “EEETEEPLeeet,TEEPLeeet,<br>0.2<br>0 ~““ TE ELL E LLLeeiLILeeiLILI<br>-50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C)A, AMBIENT TEMPERATURE (°C), AMBIENT TEMPERATURE (°C)<br>Figure 20. Gate Threshold Variation vs. Ambient Temperature<br>10,000<br>_—————<br>f = 1MHz<br>eseses<br>1,000<br>esaeeeeeeeeaeeeeee es es es es<br>C issss<br>eses eses es es<br>100 SS C oss<br>——— C rss<br>10 eseeeses rs es<br>0 5 10 15 20 25 30<br>= 6RBREE -VDS, DRAIN-SOURCE VOLTAGE (V)DS, DRAIN-SOURCE VOLTAGE (V), DRAIN-SOURCE VOLTAGE (V)<br>Figure 22. Typical Junction Capacitance<br>100<br>RDS(on)DS(on)<br>Limited P W = 10µµs<br>= tttLtLt eeeehSNehSNSN | |<br>10<br>DC<br>| a SEALE ENE ENE<br>1 PW = 10sW = 10s = 10s<br>PW = 1sW = 1s = 1s<br>P W = 100ms<br>URSRS PWW = 10ms INHH<br>0.1 T = 150°C PWW = 1ms 1ms<br>TJ(max)J(max) A = +25°C PW = 100µsW = 100µs = 100µsµss<br>Single Pulse<br>eeeeee<br>0.01 ll<br>0.1 1 10 100<br>-VDS, DRAIN-SOURCE VOLTAGE (V)DS, DRAIN-SOURCE VOLTAGE (V), DRAIN-SOURCE VOLTAGE (V)<br>Figure 24. SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE(V)<br>GS(TH)<br>V<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br>
Figure 20. Gate Threshold Variation vs. Ambient Temperature
8 of 10 **www.diodes.com**
DMC3025LSD Document number: DS35717 Rev. 7 - 2
February 2015 © Diodes Incorporated
**DMC3025LSD**
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1<br>D = 0.7<br>eer<br>D = 0.5<br>EPH0 raneTe OreTIT THHTH<br>Et<br>D = 0.3<br>D = 0.9<br>0.1 TICE ULLIM =eeeee—rATTTTTE TT<br>Seenrr D = 0.1 teeheeett te ELLIE eCTT | UT<br>fT TT ama et ee<br>effec D = 0.05<br>D = 0.02<br>TTT ZA<br>0.01 IM TIE IEECL<br>D = 0.01<br>mma a eseta cee2eeee OO PTT<br>PootPeer D = 0.005 TP A R R thjathja(t) = r(t) * R = 83C/W thja LTTmaniill<br>Duty Cycle, D = t1/ t2<br>D = Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIMES (sec)<br>Figure 25 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>
## **Package Outline Dimensions**
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
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E1 E<br>Gauge Plane<br>| | | | | | A1 FR. L | Seating Plane<br>Ct™~—“C*CSC*C~*CYTous Detail — ‘A — ’<br>| L_ | LJ | 1<br>h 7°~9°<br>45°<br>CdbetLy} [| [| = A2 A a) A3 SR ( i ———.J§__(CT Detail ‘A’<br>LJ e b SS )<br>D<br>0.254<br>**----- End of picture text -----**<br>
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SO-8<br>Dim Min Max<br>A - 1.75<br>A1 0.10 0.20<br>A2 1.30 1.50<br>A3 0.15 0.25<br>b 0.3 0.5<br>D 4.85 4.95<br>E 5.90 6.10<br>E1 3.85 3.95<br>e 1.27 Typ<br>h - 0.35<br>L 0.62 0.82<br>θ 0° 8°<br>All Dimensions in mm<br>**----- End of picture text -----**<br>
## **Suggested Pad Layout**
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
**SO-8**
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X<br>**----- End of picture text -----**<br>
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C1<br>C2<br>Y<br>**----- End of picture text -----**<br>
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Dimensions Value (in mm)<br>X 0.60<br>Y 1.55<br>C1 5.4<br>C2 1.27<br>**----- End of picture text -----**<br>
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DMC3025LSD Document number: DS35717 Rev. 7 - 2
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**DMC3025LSD**
## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
## **LIFE SUPPORT**
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
**www.diodes.com**
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DMC3025LSD Document number: DS35717 Rev. 7 - 2
February 2015 © Diodes Incorporated
Updated at June 9, 2026
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