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DMC3021LSDQ-13
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 8.5 A, 8.5 A, 0.021 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: AEC-Q101
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2.5W
- Power Dissipation P Channel: 2.5W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 8.5A
- Continuous Drain Current Id P Channel: 8.5A
- Drain Source On State Resistance N Channel: 0.021ohm
- Drain Source On State Resistance P Channel: 0.039ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.193 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
**DMC3021LSDQ** Green & **COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET** [| ## **Product Summary** |**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**| |---|---|---|---| ||||| |**Device**|**V(BR)DSS**|**RDS(on) max**|**ID Max**<br>**TA = +25**°**C**| |Q2|30V|21mΩ @VGS= 10V|8.5A| |||32mΩ @VGS= 4.5V|7.2A| |Q1|-30V|39mΩ @VGS= -10V|-7A| |||53mΩ @VGS= -4.5V|-5.6A| ## **Features** - Low On-Resistance - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - Complementary Pair MOSFET - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** - **Halogen and Antimony Free. “Green” Device (Note 3)** - **Qualified to AEC-Q101 Standards for High Reliability** ## **Description and Applications** This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. - Power Management Functions - Analog Switch - Load Switch - **PPAP Capable (Note 4)** ## **Mechanical Data** - Case: SO-8 - Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminals Connections: See Diagram - Terminals: Finish - Matte Tin annealed over Copper lead frame Solderable per MIL-STD-202, Method 208 © **e3** - Weight: 0.072 grams (approximate) **==> picture [201 x 106] intentionally omitted <==** **----- Start of picture text -----**<br> SO-8<br>> S2 a D2<br>G2 D2<br>S1 A D1<br>' G1 D1<br>Top View Top View<br>**----- End of picture text -----**<br> **==> picture [191 x 113] intentionally omitted <==** **----- Start of picture text -----**<br> D2 D1<br>G2 G1<br>S2 S1<br>N-Channel MOSFET P-Channel MOSFET<br>**----- End of picture text -----**<br> ## **Ordering Information** (Note 5) |**Ordering Informationg Information Information** (Note 5)||| |---|---|---| |**Part Number**|**Case**|**Packaging**| |DMC3021LSDQ-13|SO-8|2,500/Tape&Reel| - Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. ## **Marking Information** **==> picture [94 x 92] intentionally omitted <==** **----- Start of picture text -----**<br> 8 5<br>TLE tLe<br>C3021LD<br>YY WW<br>1 4<br>PI LI LI<br>**----- End of picture text -----**<br> > = Manufacturer’s Marking . C3021LD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 14 = 2014) WW = Week (01 - 53) YY = Date Code Marking 1 of 8 **www.diodes.com** DMC3021LSDQ Document number: DS37338 Rev. 1 - 2 June 2014 © Diodes Incorporated **DMC3021LSDQ** ## **Maximum Ratings N-CHANNEL – Q2** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratings N-CHANNEL – Q2gs N-CHANNEL – Q2s N-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings N-CHANNEL – Q2gs N-CHANNEL – Q2s N-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings N-CHANNEL – Q2gs N-CHANNEL – Q2s N-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings N-CHANNEL – Q2gs N-CHANNEL – Q2s N-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings N-CHANNEL – Q2gs N-CHANNEL – Q2s N-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings N-CHANNEL – Q2gs N-CHANNEL – Q2s N-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---| ||||||| |**Characteristic**|||**Symbol**|**Value**|**Unit**| |Drain-Source Voltage|||VDSS|30|V| |Gate-Source Voltage|||VGSS|±20|V| |Continuous Drain Current (Note 6)|Steady<br>State|TA = +25°C<br>TA = +85°C|ID|8.5<br>7.1|A| |Pulsed Drain Current (Note 7)|||IDM|26|A| ## **Maximum Ratings P-CHANNEL – Q1** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratings P-CHANNEL – Q1gs P-CHANNEL – Q1s P-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings P-CHANNEL – Q1gs P-CHANNEL – Q1s P-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings P-CHANNEL – Q1gs P-CHANNEL – Q1s P-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings P-CHANNEL – Q1gs P-CHANNEL – Q1s P-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings P-CHANNEL – Q1gs P-CHANNEL – Q1s P-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings P-CHANNEL – Q1gs P-CHANNEL – Q1s P-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---| ||||||| |**Characteristic**|||**Symbol**|**Value**|**Unit**| |Drain-Source Voltage|||VDSS|-30|V| |Gate-Source Voltage|||VGSS|±20|V| |Continuous Drain Current (Note 6)|Steady<br>State|TA = +25°C<br>TA = +85°C|ID|-7.0<br>-4.5|A| |Pulsed Drain Current (Note 7)|||IDM|-25|A| ## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) |**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---| ||||| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Power Dissipation (Note 6)|PD|2.5|W| |Thermal Resistance, Junction to Ambient (Note 6)|RθJA|50|°C/W| |Operating and Storage Temperature Range|TJ,TSTG|-55 to +150|°C| **Electrical Characteristics N-CHANNEL – Q2** (@TA = +25°C, unless otherwise specified.) |**Electrical Characteristics N-CHANNEL – Q2 **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-CHANNEL – Q2 **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-CHANNEL – Q2 **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-CHANNEL – Q2 **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-CHANNEL – Q2 **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-CHANNEL – Q2 **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics N-CHANNEL – Q2 **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---|---| |||||||| |**Characteristic**<br>~~EE~~|**Symbol**<br>~~EE~~|**Min**<br>~~EE~~|**Typ **<br>~~EE~~|**Max**<br>~~EE~~|**Unit**<br>~~EE~~|**Test Condition**<br>~~EE~~<br>~~—~~| |**OFF CHARACTERISTICS(Note 8) **<br>~~EE~~<br>~~—~~||||||| |Drain-Source Breakdown Voltage<br>~~EE~~|BVDSS<br>~~EE~~|30<br>~~EE~~|—<br>~~EE~~|—<br>~~EE~~|V<br>~~EE~~|VGS= 0V, ID= 250μA<br>~~EE~~<br>~~—~~| |Zero Gate Voltage Drain Current TJ= +25°C<br>~~—_—_————~~|IDSS<br>~~—_—_————~~|—<br>~~—_—_————~~|—<br>~~—_—_————~~|1.0<br>~~—_—_————~~|µA<br>~~—_—_————~~|VDS= 30V, VGS= 0V<br>~~—~~<br>~~—_—_————~~| |Gate-Source Leakage<br>~~—_—_————~~|IGSS<br>~~—_—_————~~|—<br>~~—_—_————~~|—<br>~~—_—_————~~|±100<br>~~—_—_————~~|nA<br>~~—_—_————~~|VGS= ±20V, VDS= 0V<br>~~—_—_————~~| |**ON CHARACTERISTICS(Note 8)**<br>~~eo~~<br>~~i~~||||||| |Gate Threshold Voltage<br>~~eo~~<br>~~i~~|VGS(th)<br>~~eo~~|1<br>~~eo~~|1.45<br>~~eo~~|2.1<br>~~eo~~|V<br>~~eo~~|VDS= VGS, IC= 250μA<br>~~eo~~| |Static Drain-Source On-Resistance<br>~~i~~|RDS (ON)<br>~~SS~~|—<br>—<br>~~SS~~|14|21|mΩ|VGS= 10V, IC= 7A| ||||18|32||VGS= 4.5V, IC= 5.6A| |Forward Transfer Admittance<br>~~i~~<br>~~—SEEe~~||Yfs|<br>~~—SEEe~~<br>~~SS~~|—<br>~~—SEEe~~<br>~~SS~~|8.1<br>~~—SEEe~~|—<br>~~—SEEe~~|S<br>~~—SEEe~~|VDS= 5V, IC= 7A<br>~~—SEEe~~| |Diode Forward Voltage (Note 8)<br>~~—SEEe~~|VSD<br>~~—SEEe~~<br>~~SS~~|—<br>~~—SEEe~~<br>~~SS~~|0.7<br>~~—SEEe~~|1.0<br>~~—SEEe~~|V<br>~~—SEEe~~|VGS= 0V, IS= 1A<br>~~—SEEe~~| |**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~SS~~||||||| |Input Capacitance<br>~~Rs~~<br>~~———~~|Ciss<br>~~———~~|—<br>~~———~~|767<br>~~———~~|—<br>~~———~~|pF<br>~~———~~|VDS= 10V, VGS= 0V,<br>f = 1MHz<br>~~———~~| |Output Capacitance<br>~~———~~|Coss<br>~~———~~|—<br>~~———~~|110<br>~~———~~|—<br>~~———~~|pF<br>~~———~~|| |Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~———~~|—<br>~~———~~|105<br>~~———~~|—<br>~~———~~|pF<br>~~———~~|| |Gate Resistance<br>~~———~~|Rg<br>~~———~~|—<br>~~———~~|1.4<br>~~———~~|—<br>~~———~~|Ω<br>~~———~~|VDS= 0V, VGS= 0V, f = 1MHz<br>~~———~~| |Total Gate Charge(VGS= 4.5V)<br>~~DD~~|Qg<br>~~DD~~|—<br>~~DD~~|7.8<br>~~DD~~|—<br>~~DD~~|nC<br>~~DD~~|VDS= 15V, ID= 9A<br>~~ee~~| |Total Gate Charge(VGS= 10V)<br>~~Rs~~|Qg|—|16.1|—|nC|| |Gate-Source Charge|Qgs|—|1.8|—|nC|| |Gate-Drain Charge<br>~~————~~|Qgd|—|2.5|—<br>~~ee~~|nC<br>~~ee~~|| |Turn-On Delay Time<br>~~————~~|tD(on)|—|5.0|—<br>~~ee~~|ns<br>~~ee~~|VGS= 10V, VDS= 15V,<br>RG= 6Ω,ID= 1A<br>~~ee~~| |Turn-On Rise Time<br>~~————~~|tr|—|4.5|—<br>~~ee~~|ns<br>~~ee~~|| |Turn-Off Delay Time<br>~~————~~|tD(off)|—|26.3|—<br>~~ee~~|ns<br>~~ee~~|| |Turn-Off Fall Time<br>~~————~~|tf|—|8.55|—<br>~~ee~~|ns<br>~~ee~~|| - Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout. 7. Repetitive rating, pulse width limited by junction temperature. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 8 **www.diodes.com** DMC3021LSDQ Document number: DS37338 Rev. 1 - 2 June 2014 © Diodes Incorporated **DMC3021LSDQ** **==> picture [500 x 699] intentionally omitted <==** **----- Start of picture text -----**<br> 30 30<br>25 VGS = 8.0V 25 V DS = 5V<br>VGS = 4.5V<br>20 V GS = 3.0V 20<br>15 15<br>10 10<br>VGS = 2.5V TA = 150°C<br>TA = 125°C<br>5 5 T A = 85°C<br>TA = 25°C<br>0 VGS = 2.0V 0 TA = -55°C<br>0 0.5 1 1.5 2 0 1 2 3 4<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics<br>1 0.06<br>0.05 V GS = 4.5V<br>0.04<br>0.1 0.03<br>TA = 150°C<br>0.02 TA = 125°C<br>VGS = 2.5V TA = 85°C<br>TA = 25°C<br>0.01<br>TA = -55°C<br>VGS = 4.5V<br>0.01 0<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A)<br>Fig. 3 Typical On-Resistance Fig. 4 Typical Drain-Source On-Resistance<br>vs. Drain Current and Gate Voltage vs. Drain Current and Temperature<br>1.6 0.05<br>1.4 0.04<br>1.2 0.03<br>VGS = 4.5V<br>1.0 V GS = 4.5V 0.02 ID = 10A<br>ID = 10A<br>0.8 V GS = 10V 0.01 V GS = 10V<br>ID = 11.6A ID = 11.6A<br>CCL ErEr<br>0.6 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>[tet]<br>DMC3021LSDQ 3 of 8<br>Document number: DS37338 Rev. 1 - 2 www.diodes.com<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED) , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> June 2014 © Diodes Incorporated **DMC3021LSDQ** **==> picture [218 x 428] intentionally omitted <==** **----- Start of picture text -----**<br> 2.4<br>2.0<br>1.6<br>ID = 1mA<br>1.2<br>ID = 250µA<br>0.8<br>0.4<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature<br>10,000<br>f = 1MHz<br>1,000 SS<br>Ciss<br>Coss<br>100 NO Crss<br>10<br>0 5 10 15 20 25 30<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Typical Capacitance<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **==> picture [220 x 439] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>16<br>T A = 25°C<br>12<br>8<br>4<br>0<br>0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 8 Diode Forward Voltage vs. Current<br>10,000 ee<br>T A = 150°C<br>1,000 a<br>TA = 125°C<br>100<br>T A = 85°C<br>10<br>T A = 25°C<br>1 TA = -55°C<br>0 5 10 15 20 25 30<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 10 Typical Drain-Source Leakage Current<br>vs. Drain-Source Voltage<br>, SOURCE CURRENT (A)<br>IS<br>, DRAIN-SOURCE LEAKAGE CURRENT (nA)<br>IDSS<br>**----- End of picture text -----**<br> 4 of 8 **www.diodes.com** DMC3021LSDQ Document number: DS37338 Rev. 1 - 2 June 2014 © Diodes Incorporated **DMC3021LSDQ** ## **Electrical Characteristics P-CHANNEL – Q1** (@TA = +25°C, unless otherwise specified.) **==> picture [523 x 564] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---| |Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition| |||OFF CHARACTERISTICS (Note 8)| |DD|Drain-Source Breakdown Voltage|BVDSS|(OD|-30|QO|—|I|—|(S(O|V|VGS = 0V, ID = -250μA| |nD|Zero Gate Voltage Drain Current TJ = +25°C|RD|IDSS|UD|—|I|—|-1.0|(OO|µA|VDS = -30V, VGS = 0V| |Gate-Source Leakage|IGSS|—|—|±100|nA|VGS = ±20V, VDS = 0V| |SO|ON CHARACTERISTICS (Note 8)| |nD|Gate Threshold Voltage|VGS(th)|-1|-1.7|-2.2|V|VDS = VGS, ID = -250μA| |—|30|39|VGS = -10V, ID = -4.3A| |i|Static Drain-Source On-Resistance|RD|RDS(ON)|ID|—|42|EN|53|I|(OU|mΩ|eee(OO|VGS = -4.5V, ID = -3.7A| |DD|Forward Transfer Admittance||Yfs||(OD|—|QO|7|—|(S(O|S|VDS = -5V, ID = -4.3A| |Pe|Diode Forward Voltage (Note 8)|VSD|—|-0.75|-1.0|V|VGS = 0V, IS = -1.7A| |DYNAMIC CHARACTERISTICS (Note 9)| |DD|Input Capacitance|Ciss|—|1002|—|pF| |Output Capacitance|Coss|—|125|—|pF|VDS = -10V, VGS = 0V,| |f = 1.0MHz| |PO|Reverse Transfer Capacitance|ee|Crss|—|118|re|—|pF| |nN|Gate Resistance|RD|Rg|—|DN|13|—|I|(OO|Ω|(OO|VDS = 0V, VGS = 0V, f = 1MHz| |DD|Total Gate Charge (VGS = 4.5V)|Qg|I|—|10.1|I|—|nC| |NO|Total Gate Charge (VGS = 10V)|Qg|—|21.1|—|nC|VDS = -15V, ID = -6A| |Gate-Source Charge|Qgs|—|2.8|—|nC| |nD————|Gate-Drain Charge|OD|Qgd|—|3.2|—|e|nC|e| |en|Turn-On Delay Time|tD(on)|—|10.1|—|ns| |OD|Turn-On Rise Time|tr|I|—|I|6.5|—|ns|VGS = -10V, VDS = -15V,| |Turn-Off Delay Time|tD(off)|—|50.1|—|ns|RG = 6Ω , ID = -1A| |eens|Turn-Off Fall Time|ns|tf|GR|—|GE|22.2|—|GE|ns| |Notes:|8. Short duration pulse test used to minimize self-heating effect.| |9. Guaranteed by design. Not subject to production testing.| |20| |20| |VGS = 10V|VDS = 5V| |VGS = 4.5V| |VGS = 4.0V|15| |15| |VGS = 3.5V| |10| |10| |/| |VGS = 3.0V|5|TA = 150°C| |5| |TA = 125°C| |TA = 85°C|TA = 25°C| |0|TA = -55°C| |0|VGS = 2.5V|0|1|2|3|4|5|6| |0|0.5|1|1.5|2|2.5|3|3.5|4|4.5|5|VGS, GATE SOURCE VOLTAGE (V)| |VDS, DRAIN-SOURCE VOLTAGE (V)|Fig. 12 Typical Transfer Characteristics| |Fig. 11 Typical Output Characteristics| **----- End of picture text -----**<br> 5 of 8 **www.diodes.com** DMC3021LSDQ Document number: DS37338 Rev. 1 - 2 June 2014 © Diodes Incorporated **DMC3021LSDQ** **==> picture [479 x 661] intentionally omitted <==** **----- Start of picture text -----**<br> 0.10 0.10<br>VGS = 10V<br>0.08 0.08<br>TA = 150°C<br>0.06 0.06 T A = 125°C<br>—— TA = 85°C<br>0.04 V GS = 4.5V 0.04 TA = 25°C<br>jf<br>VGS = 10V TA = -55°C<br>0.02 0.02<br>0 0<br>0 5 10 15 20 0 5 10 15 20<br>ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A)<br>Fig. 13 Typical On-Resistance Fig. 14 Typical Drain-Source On-Resistance<br>vs. Drain Current and Gate Voltage vs. Drain Current and Temperature<br>1.7 0.08<br>0.07<br>1.5<br>0.06<br>1.3 VGS = 4.5V<br>0.05 I D = 5A<br>1.1 0.04<br>VGS = 10V<br>ID = 10A 0.03<br>0.9 VGS = 10V<br>ID = 10A<br>0.02<br>0.7 VGS = 4.5V<br>mectai ID = 5A 0.01 seeesete<br>0.5 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Fig. 15 On-Resistance Variation with Temperature Fig. 16 On-Resistance Variation with Temperature<br>2.5 20<br>2.0 16<br>ID = 1mA<br>T A = 25°C<br>1.5 ID = 250µA 12<br>1.0 8<br>0.5 4<br>0 ee 0 /<br>-50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4<br>TA, AMBIENT TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 17 Gate Threshold Variation vs. Ambient Temperature Fig. 18 Diode Forward Voltage vs. Current<br>)<br>Ω )<br>, DRAIN-SOURCE ON-RESISTANCE ( Ω<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R DS(ON)<br>R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE (<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br> 6 of 8 **www.diodes.com** DMC3021LSDQ Document number: DS37338 Rev. 1 - 2 June 2014 © Diodes Incorporated **DMC3021LSDQ** **==> picture [481 x 219] intentionally omitted <==** **----- Start of picture text -----**<br> 10,000 10,000<br>f = 1MHz<br>1,000 === T A = 150°C<br>1,000 ft C iss Tee TA = 125 ° C —<br>100<br>C oss TA = 85°C<br>100 Nee Crss === a<br>10<br>TA = 25 ° C<br>————<br>10 1<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 19 Typical Capacitance Fig. 20 Typical Drain-Source Leakage Current<br>vs. Drain-Source Voltage<br>C, CAPACITANCE (pF)<br>, DRAIN-SOURCE LEAKAGE CURRENT (nA)<br>IDSS<br>**----- End of picture text -----**<br> ## **Package Outline Dimensions** Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. **==> picture [395 x 158] intentionally omitted <==** **----- Start of picture text -----**<br> SO-8<br>Dim Min Max<br>A - 1.75<br>A1 0.10 0.20<br>E1 E A2 1.30 1.50<br>Gauge Plane<br>A1 Seating Plane A3 0.15 0.25<br>L b 0.3 0.5<br>Detail ‘A’ D 4.85 4.95<br>E 5.90 6.10<br>E1 3.85 3.95<br>h 45° 7°~9° e 1.27 Typ<br>h - 0.35<br>A2 A A3 Detail ‘A’ L 0.62 0.82<br>θ 0° 8°<br>e b All Dimensions in mm<br>D<br>0.254<br>**----- End of picture text -----**<br> ## **Suggested Pad Layout** Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version. X ~~Wea~~ C1 C2 Y ~~Waag~~ |**Dimensions**|**Value (in mm)**| |---|---| |**X**|0.60| |**Y**|1.55| |**C1 **|5.4| |**C2**|1.27| 7 of 8 **www.diodes.com** DMC3021LSDQ Document number: DS37338 Rev. 1 - 2 June 2014 © Diodes Incorporated **DMC3021LSDQ** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. ## **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2014, Diodes Incorporated **www.diodes.com** 8 of 8 **www.diodes.com** DMC3021LSDQ Document number: DS37338 Rev. 1 - 2 June 2014 © Diodes Incorporated
Updated at June 9, 2026
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