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DMC3021LSD-13
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 8.5 A, 8.5 A, 0.014 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2.5W
- Power Dissipation P Channel: 2.5W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 8.5A
- Continuous Drain Current Id P Channel: 8.5A
- Drain Source On State Resistance N Channel: 0.014ohm
- Drain Source On State Resistance P Channel: 0.014ohm
| Delivery and price | |
|---|---|
| Units per pack | 7500 |
| Price | 0.183 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**DMC3021LSD** sd **COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET** ## **Product Summary** |**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**| |---|---|---|---| ||||| |**Device**|**BVDSS**|**RDS(ON) max**|**ID Max**<br>**TA = +25****C**| |Q2|30V|21mΩ @ VGS= 10V|8.5A| |||32mΩ @ VGS= 4.5V|7.2A| |Q1|-30V|39mΩ @ VGS= -10V|-7A| |||53mΩ @ VGS= -4.5V|-5.6A| ## **Description** This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ## **Features** - Low On-Resistance - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - - Complementary Pair MOSFET - - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** - - **Halogen and Antimony Free. “Green” Device (Note 3)** - - **For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at** - - - **https://www.diodes.com/products/automotive/automotive products/.** - **This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.** **https://www.diodes.com/quality/product-definitions/** - **An Automotive-Compliant Part is Available Under Separate Datasheet (DMC3021LSDQ)** ## **Applications** - Power Management Functions - Analog Switch - Load Switch ## **Mechanical Data** - Case: SO-8 - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminals Connections: See Diagram - Terminals: Finish - Matte Tin Annealed over Copper Lead Frame. Solderable per MIL-STD-202, Method 208 **e3** - Weight: 0.072 grams (Approximate) **==> picture [22 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> SO-8<br>**----- End of picture text -----**<br> **==> picture [187 x 80] intentionally omitted <==** **----- Start of picture text -----**<br> S2 D2<br>G2 D2<br>S1 D1<br>G1 D1<br>Top View Top View<br>**----- End of picture text -----**<br> **==> picture [183 x 109] intentionally omitted <==** **----- Start of picture text -----**<br> D2 D1<br>G2 G1<br>S2 S1<br>N-Channel MOSFET P-Channel MOSFET<br>**----- End of picture text -----**<br> ## **Ordering Information** (Note 4) |**Ordering Informationg Information Information** (Note 4)||| |---|---|---| |**Part Number**|**Case**|**Packaging**| |DMC3021LSD-13|SO-8|2500/Tape & Reel| - Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. ## **Marking Information** **==> picture [266 x 88] intentionally omitted <==** **----- Start of picture text -----**<br> 8 5<br> = Manufacturer’s Marking<br>C3021LD = Product Type Marking Code<br>C3021LD YYWW = Date Code Marking<br>YY or YY = Year (ex: 20 = 2020)<br>YY WW<br>WW = Week (01 to 53)<br>1 4<br>1 LI} LI vl<br>**----- End of picture text -----**<br> 1 of 9 **www.diodes.com** DMC3021LSD Document number: DS32152 Rev. 4 - 2 February 2020 © Diodes Incorporated **DMC3021LSD** ## **Maximum Ratings N-CHANNEL – Q2** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratings N-CHANNEL – Q2gs N-CHANNEL – Q2s N-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings N-CHANNEL – Q2gs N-CHANNEL – Q2s N-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings N-CHANNEL – Q2gs N-CHANNEL – Q2s N-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings N-CHANNEL – Q2gs N-CHANNEL – Q2s N-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings N-CHANNEL – Q2gs N-CHANNEL – Q2s N-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings N-CHANNEL – Q2gs N-CHANNEL – Q2s N-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---| ||||||| |**Characteristic**|||**Symbol**|**Value**|**Unit**| |Drain-Source Voltage|||VDSS|30|V| |Gate-Source Voltage|||VGSS|±20|V| |Continuous Drain Current (Note 5)|Steady<br>State|TA = +25°C<br>TA = +85°C|ID|8.5<br>7.1|A| |Pulsed Drain Current (Note 6)|||IDM|40|A| ## **Maximum Ratings P-CHANNEL – Q1** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratings P-CHANNEL – Q1gs P-CHANNEL – Q1s P-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings P-CHANNEL – Q1gs P-CHANNEL – Q1s P-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings P-CHANNEL – Q1gs P-CHANNEL – Q1s P-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings P-CHANNEL – Q1gs P-CHANNEL – Q1s P-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings P-CHANNEL – Q1gs P-CHANNEL – Q1s P-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings P-CHANNEL – Q1gs P-CHANNEL – Q1s P-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---| ||||||| |**Characteristic**|||**Symbol**|**Value**|**Unit**| |Drain-Source Voltage|||VDSS|-30|V| |Gate-Source Voltage|||VGSS|±20|V| |Continuous Drain Current (Note 5)|Steady<br>State|TA = +25°C<br>TA = +85°C|ID|-7.0<br>-4.5|A| |Pulsed Drain Current (Note 6)|||IDM|-30|A| ## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) |**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---| ||||| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Power Dissipation (Note 5)|PD|2.5|W| |Thermal Resistance, Junction to Ambient (Note 5)|RθJA|50|°C/W| |Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C| ## **Electrical Characteristics N-CHANNEL – Q2** (@TA = +25°C, unless otherwise specified.) |**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**| |---|---|---|---|---|---|---| |**OFF CHARACTERISTICS(Note 7) **||||||| |Drain-Source Breakdown Voltage|BVDSS|30|—|—|V|VGS= 0V, ID= 250μA| |Zero Gate Voltage Drain Current TJ= +25°C|IDSS|—|—|1.0|µA|VDS= 30V, VGS= 0V| |Gate-Source Leakage|IGSS|—|—|±100|nA|VGS= ±20V, VDS= 0V| |**ON CHARACTERISTICS(Note 7)**||||||| |Gate Threshold Voltage|VGS(TH)|1|1.45|2.1|V|VDS= VGS, ID= 250μA| |Static Drain-Source On-Resistance|RDS(ON)|—<br>—|14|21|mΩ|VGS= 10V, ID= 7A| ||||18|32||VGS= 4.5V, ID= 5.6A| |Forward Transfer Admittance||Yfs||—|8.1|—|S|VDS= 5V, ID= 7A| |Diode Forward Voltage (Note 7)|VSD|—|0.7|1.0|V|VGS= 0V, IS= 1A| |**DYNAMIC CHARACTERISTICS(Note 8)**||||||| |Input Capacitance|Ciss|—|767|—|pF|VDS= 10V, VGS= 0V,<br>f = 1.0MHz| |Output Capacitance|Coss|—|110|—|pF|| |Reverse Transfer Capacitance|Crss|—|105|—|pF|| |Gate Resistance<br>~~———_—~~|Rg<br>~~———_—~~|—|1.4|—<br>~~e~~|Ω<br>~~e~~|VDS= 0V, VGS= 0V, f = 1MHz<br>~~eee~~| |Total Gate Charge(VGS= 4.5V)<br>~~———_—~~|Qg<br>~~———_—~~|—|7.8|—<br>~~e~~|nC<br>~~e~~|VDS= 15V, ID= 9A<br>~~eee~~<br>~~eS~~| |Total Gate Charge(VGS= 10V)<br>~~———_—~~|Qg<br>~~———_—~~|—|16.1|—<br>~~e~~|nC<br>~~e~~|| |Gate-Source Charge<br>~~———_—~~|Qgs<br>~~———_—~~|—|1.8|—<br>~~e~~|nC<br>~~e~~|| |Gate-Drain Charge<br>~~———_—~~<br>~~——~~|Qgd<br>~~———_—~~|—<br>~~eS~~|2.5<br>~~eS~~|—<br>~~e~~<br>~~eS~~|nC<br>~~e~~<br>~~eS~~|| |Turn-On Delay Time<br>~~———_—~~<br>~~——~~|tD(ON)<br>~~———_—~~|—<br>~~eS~~|5.0<br>~~eS~~|—<br>~~e~~<br>~~eS~~|ns<br>~~e~~<br>~~eS~~|VGS= 10V, VDS= 15V,<br>RG= 6Ω, ID= 1A<br>~~eee~~<br>~~eS~~| |Turn-On Rise Time<br>~~———_—~~<br>~~——~~|tR<br>~~———_—~~|—<br>~~eS~~|4.5<br>~~eS~~|—<br>~~e~~<br>~~eS~~|ns<br>~~e~~<br>~~eS~~|| |Turn-Off Delay Time<br>~~——~~|tD(OFF)|—<br>~~eS~~|26.3<br>~~eS~~|—<br>~~eS~~|ns<br>~~eS~~|| |Turn-Off Fall Time<br>~~——~~|tF|—<br>~~eS~~|8.55<br>~~eS~~|—<br>~~eS~~|ns<br>~~eS~~|| Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 9 **www.diodes.com** DMC3021LSD Document number: DS32152 Rev. 4 - 2 February 2020 © Diodes Incorporated **DMC3021LSD** **==> picture [478 x 666] intentionally omitted <==** **----- Start of picture text -----**<br> 30 30<br>25 “Ip V GS = 8.0V 25 V = 5VDS oy<br>20 iste} VGS = 4.5V V GS = 3.0V )A(T 20 i e<br>N<br>E<br>R<br>R<br>15 Fira UC 15 e e<br>N<br>IA<br>R<br>10 D 10<br><= VGS = 2.5V , I D T A = 150°C |<br>TA = 125°C<br>5 ——_- 5 o TA = 85°C f<br>T A = 25°C<br>0 VGS = 2.0V 0 T A = -55°C<br>0 0.5 1 1.5 2 0 1 2 3 4<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS , GATE SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics<br>1 ) 0.06<br>(<br>E<br>C<br>NA 0.05 V = 4.5VGS<br>T<br>S<br>IS<br>ER 0.04<br>-N<br>O<br>E<br>0.1 C 0.03<br>ptt RU F L T A = 150°C<br>O<br>V GS = 2.5V S-NIA 0.02 T TAA = 85°C= 125°C<br>RD T A = 25°C<br>, )NO 0.01 T A = -55°C<br>VGS = 4.5V R(SD<br>0.01 TT ELL. 0 Ft| fl<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>ID, DRAIN-SOURCE CURRENT (A) ID , DRAIN CURRENT (A)<br>Fig. 3 Typical On-Resistance Fig. 4 Typical Drain-Source On-Resistance<br>vs. Drain Current and Gate Voltage vs. Drain Current and Temperature<br>1.6 0.05<br>1.4 BERGE 0.04 TELE<br>1.2 0.03<br>LITA LEE<br>VGS = 4.5V<br>1.0 VGS = 4.5V 0.02 ID = 10A<br>ID = 10A<br>0.8 a V GS = 10V e 0.01 yt V GS = 10V ee<br>ID = 11.6A ID = 11.6A<br>0.6 Vo 0<br>-50 MT -25 0 25 LLL 50 75 100 EL 125 150 -50 TE -25 0 25 50 75 L 100 125 150<br>TJ, JUNCTION TEMPERATURE ( °C癈 ) TJ, JUNCTION TEMPERATURE ((°C) 癈 )<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>D<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>D<br>, DRAIN CURRENT (A)<br>I<br>DS(ON)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>**----- End of picture text -----**<br> 3 of 9 **www.diodes.com** DMC3021LSD Document number: DS32152 Rev. 4 - 2 February 2020 © Diodes Incorporated **DMC3021LSD** ~~[~~ **==> picture [224 x 666] intentionally omitted <==** **----- Start of picture text -----**<br> 2.4<br>)V<br>(<br>E 2.0<br>G<br>A<br>T<br>L<br>O<br>V 1.6<br>D<br>LO I = 1mAD<br>HS 1.2 ae<br>E<br>RH I = 250µAD<br>T<br>E 0.8 SS K<br>T<br>A<br>G<br>, )HT 0.4 e t y fp™.LS<br>(S<br>G<br>V<br>0<br>-50 -25 0 25 50 75 100 125 150<br>T , AMBIENT TEMPERATURE (°C)A<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature<br>10,000 ee<br>a QO | f = 1MHz<br>ee en ene<br>Ge<br>1,000<br>SS<br>Ciss<br>ee<br>Coss<br>100 eee Crss a<br>a<br>ee<br>a<br>ns<br>10 PF | | [| | |]<br>0 5 10 15 20 25 30<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Typical Capacitance<br>100<br>RLimitedDS(ON) ee ee aan<br>PW = 100µs<br>F—— FESTWIN S TTTETPSN ytane<br>10 eNOSNU NN<br>boP|NINSSINCGNNONYND ON ZN Tt<br>}_| ISNESSNZS SNE SN Baal<br>1 PW = 1ms<br>PW = 10ms<br>|eS)PC > TNOATNYWINNSONDeSPotPTBaan Tih<br>0.1 PW = 100ms<br>TTJ(Max) C = 25= 150 ℃ ℃ PW = 1s<br>Single Pulse | | PW = 10s ANU<br>DUT on 1*MRP BoardVGS = 10V [| DC Baal<br>0.01 eee |<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 11 SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>C, CAPACITANCE (pF)<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> **==> picture [224 x 441] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>16<br>TA = 25°C TA = 25癈<br>12<br>eee<br>8<br>P| | | fF |<br>4<br>Pti | | f | |<br>0<br>0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 8 Diode Forward Voltage vs. Current<br>)A 10,000 _——<br>n(TN I| T = 150°CA<br>E<br>R<br>R r f<br>U 1,000<br>CE T = 125°CA<br>G a A<br>A<br>K<br>A<br>E 100<br>L<br>E<br>C<br>R<br>U T = 85°CA —__|<br>O<br>S<br>-NIAR 10 ————eea<br>D _ T = 25°CA<br>, S<br>S<br>I D 1 — T = -55°CA<br>0 5 10 15 20 25 30<br>V , DRAIN-SOURCE VOLTAGE (V)DS<br>Fig. 10 Typical Drain-Source Leakage Current<br>vs. Drain-Source Voltage<br>, DRAIN-SOURCE LEAKAGE CURRENT (nA)<br>IDSS<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br> 4 of 9 **www.diodes.com** DMC3021LSD Document number: DS32152 Rev. 4 - 2 February 2020 © Diodes Incorporated **DMC3021LSD** **Electrical Characteristics P-CHANNEL – Q1** (@TA = +25°C, unless otherwise specified.) **==> picture [519 x 555] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition| |OFF CHARACTERISTICS (Note 7)| |Drain-Source Breakdown Voltage|BVDSS|-30|—|—|V|VGS = 0V, ID = -250μA| |Zero Gate Voltage Drain Current TJ = +25°C|IDSS|—|—|-1.0|µA|VDS = -30V, VGS = 0V| |—_———|Gate-Source Leakage|IGSS|—|—|±100|nA|VGS = ±20V, VDS = 0V| |ON CHARACTERISTICS (Note 7)| |Gate Threshold Voltage|VGS(TH)|-1|-1.7|-2.2|V|VDS = VGS, ID = -250μA| |—|30|39|VGS = -10V, ID = -4.3A| |SSE|Static Drain-Source On-Resistance|RDS(ON)|—|42|53|mΩ|VGS = -4.5V, ID = -3.7A| |Forward Transfer Admittance||Yfs||—|7|—|S|VDS = -5V, ID = -4.3A| |eo|Diode Forward Voltage (Note 7)|VSD|—|-0.75|-1.0|V|VGS = 0V, IS = -1.7A| |DYNAMIC CHARACTERISTICS (Note 8)| |Input Capacitance|Ciss|—|1002|—|pF| |VDS = -10V, VGS = 0V,| |Output Capacitance|Coss|—|125|—|pF| |f = 1.0MHz| |Reverse Transfer Capacitance|Crss|—|118|—|pF| |ee|Gate Resistance|Rg|—|13|—|ee|Ω|VDS = 0V, VGS = 0V, f = 1MHz| |——|Total Gate Charge (VGS = -4.5V)|Qg|—|10.1|—|nC| |Total Gate Charge (VGS = -10V)|ee|Qg|—|21.1|—|nC|VDS = -15V, ID = -6A| |Gate-Source Charge|Qgs|—|2.8|—|nC| |Gate-Drain Charge|Qgd|—|3.2|—|nC| |Turn-On Delay Time|tD(ON)|—|10.1|—|ns| |Turn-On Rise Time|tR|—|6.5|—|ns|VGS = -10V, VDS = -15V,| |Turn-Off Delay Time|tD(OFF)|—|50.1|—|ns|RG = 6Ω , ID = -1A| |Turn-Off Fall Time|tF|—|22.2|—|ns| |——<—<<—_—=_——|eee| |Notes:|7. Short duration pulse test used to minimize self-heating effect.| |8. Guaranteed by design. Not subject to production testing.| |20|20| |V = -10VGS| |V = -4.5VGS|V = -5VDS| |V = -4.0VGS| |)A(TNERRUC|1510|_|V = -3.5VGS|)A(TNERRUC|1510|aCAEL| |NIARD|NIARD| |,I|D|5|V = -3.0VGS|,I|D|5|LT|T,|T = 150°CA| |T = 125°CA| |T = 85°CA|T = 25°CA| |0|V = -2.5VGS|0|T = -55°CA| |0|0.5|1|1.5|2|2.5|3|3.5|4|4.5|5|0|1|2|3|4|5|6| |V , DRAIN-SOURCE VOLTAGE (V)DS|V , GATE SOURCE VOLTAGE (V)GS| |Fig. 12 Typical Output Characteristics|Fig. 13 Typical Transfer Characteristics| **----- End of picture text -----**<br> 5 of 9 **www.diodes.com** DMC3021LSD Document number: DS32152 Rev. 4 - 2 February 2020 © Diodes Incorporated **DMC3021LSD** **==> picture [485 x 663] intentionally omitted <==** **----- Start of picture text -----**<br> ) 0.10 ) 0.10<br>(E (E<br>C C V = -10VGS<br>N N<br>AT 0.08 AT 0.08<br>SIS SIS T = 150°CA<br>E E<br>R-NO 0.06 R-NO 0.06 T = 125°CA<br>E E T = 85°CA<br>C C<br>R R<br>UO 0.04 V = -4.5VGS UO 0.04 T = 25°CA<br>S-N S-N<br>IAR V = -10VGS IAR T = -55°CA<br>D, )N 0.02 D, )N 0.02<br>O O<br>R(SD R(SD<br>0 0<br>0 5 10 15 20 0 5 10 15 20<br>I , DRAIN-SOURCE CURRENT (A)D I , DRAIN CURRENT (A)D<br>Fig. 14 Typical On-Resistance Fig. 15 Typical Drain-Source On-Resistance<br>vs. Drain Current and Gate Voltage vs. Drain Current and Temperature<br>1.7 ) 0.08<br>(<br>E<br>C 0.07<br>)D 1.5 ae NA P| | tt tt i<br>E T<br>EC ILZ SIS 0.06<br>RUOS- AMRON 1.3 coooeeCtiC*i ER-NO 0.05 V = -4.5VGSI = -5AD FE Ee<br>NIA (E 1.1 TOCA EC 0.04 ee e<br>R C R<br>D N V = -10VGS U<br>, )NO(SD ATSISE 0.9 C I = -10AD AT = OS-N I A 0.03 e e V = -10VI = -10AGSD r<br>R R-NO 0.7 ie V = -4.5VGSI = -5AD os RD , )NO 0.020.01 Be<br>(S<br>D<br>R<br>0.5 a 0 a<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>T , JUNCTION TEMPERATURE (°C)J T , JUNCTION TEMPERATURE (°C)J<br>Fig. 16 On-Resistance Variation with Temperature Fig. 17 On-Resistance Variation with Temperature<br>2.5 20<br>)V<br>(<br>E<br>G 2.0 16<br>AT ERR EE I = -1mAD EE tH<br>LO TA = 25°C T A = 25癈<br>V<br>DL 1.5 I = -250µAD 12<br>O<br>H r es t) HEAR<br>S<br>E<br>R<br>H 1.0 8<br>T<br>ET S s EEE<br>A<br>G<br>, )H 0.5 4<br>T<br>(SG Ee<br>V<br>0 0<br>TELL EL fe<br>-50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4<br>T , AMBIENT TEMPERATURE (°C)A VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 18 Gate Threshold Variation vs. Ambient Temperature Fig. 19 Diode Forward Voltage vs. Current Fig. 18 Diode Forward Voltage vs. Current<br>, DRAIN-SOURCE ON-RESISTANCE (Ω) , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON) DS(ON)<br>R R<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED) DRA N-SOURCE ON-RESISTANCE Ω)<br>DS(ON)<br>R<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br> 6 of 9 **www.diodes.com** DMC3021LSD Document number: DS32152 Rev. 4 - 2 February 2020 © Diodes Incorporated **DMC3021LSD** [ **==> picture [104 x 26] intentionally omitted <==** **----- Start of picture text -----**<br> Iu coRPORATE D®<br>**----- End of picture text -----**<br> **==> picture [307 x 443] intentionally omitted <==** **----- Start of picture text -----**<br> 10,000 | )A 10,000<br>n<br>|a es f = 1MHz (TN<br>E<br>R<br>RU<br>U 1,000<br>ee C<br>1,000 a——eSee——_—se| Ciss eeereeeee EGAK<br>A<br>E 100<br>en L<br>C oss EC<br>R<br>100 Crss ESS U<br>—|a O<br>[ S<br>aa= [==] ee -N 10<br>a | IA<br>R<br>D<br>, S<br>S<br>10 0 5 10 15 20 25 30 I D 1 0<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 20 Typical Capacitance Fig. 19 Typical Capacitance<br>100<br>RLimitedDS(ON) e PTTes ee eeeeeee PW = 100µs eeeeTy<br>oe<br>eA LILTIN SS LT<br>10 NN N<br>NE NRE<br>ae. SS. SP 4), Se SE ee<br>a77 SG.1S.SE, See EE<br>po NINZNORSON EONZNOLTT<br>1 PW = 1ms<br>T RS<br>Pe; NERASN NSE<br>PW = 10ms<br>——a SNa[NOK S m. YON S , Se,A PTNE Tr<br>P N LTT<br>0.1 TJ(Max) = 150 ℃ PW = 100ms SON<br>TC = 25 ℃ PW = 1s ONOFNM NP<br>Single Pulse<br>DUT on 1*MRP [_] PW = 10s ANae<br>Board<br>DC<br>0.01 VGS = -10V ttt anil<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 22 SOA, Safe Operation Area<br>, DRAIN-SOURCE LEAKAGE CURRENT (nA)<br>IDSSDSS<br>C, CAPACITANCE (pF)<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> **==> picture [225 x 219] intentionally omitted <==** **----- Start of picture text -----**<br> A)A 10,000 eeoe ee<br>n ee<br>NTN(TN a<br>E<br>R<br>RU 1,000 T = 150°CA<br>C es a a — ——<br>KAKGAKEGAK e e— ee eee T = 125°CA<br>A<br>E 100<br>L —_|<br>CEC T = 85°CA<br>R<br>U<br>O<br>S<br>N-N 10 ee<br>AIA ————— a a ee |<br>R pt —<br>D<br>, S T = 25°CA<br>S<br>I D 1<br>0 5 10 15 20 25 30<br>V , DRAIN-SOURCE VOLTAGE (V)DS<br>Fig. 21 Typical Drain-Source Leakage Current<br>vs. Drain-Source Voltage<br>, DRAIN-SOURCE LEAKAGE CURRENT (nA)<br>IDSSDSS<br>**----- End of picture text -----**<br> 7 of 9 **www.diodes.com** DMC3021LSD Document number: DS32152 Rev. 4 - 2 February 2020 © Diodes Incorporated **DMC3021LSD** ## **Package Outline Dimensions** Please see http://www.diodes.com/package-outlines.html for the latest version. **==> picture [20 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> SO-8<br>**----- End of picture text -----**<br> **==> picture [492 x 202] intentionally omitted <==** **----- Start of picture text -----**<br> SO-8<br>Dim Min Max Typ<br>A 1.40 1.50 1.45<br>E<br>SE A1 0.10 0.20 0.15<br>b 0.30 0.50 0.40<br>1 c 0.15 0.25 0.20<br>D 4.85 4.95 4.90<br>E 5.90 6.10 6.00<br>E1 3.80 3.90 3.85<br>b E0 3.85 3.95 3.90<br>E1<br>e -- -- 1.27<br>h h -- -- 0.35<br>Q<br>L 0.62 0.82 0.72<br>7°<br>Q 0.60 0.70 0.65<br>c<br>All Dimensions in mm<br>A 4°± 3°<br>G auge Plane<br>S eating Plane<br>L<br>e A1 E0<br>D<br>9° (All sides)<br>R 0.1<br>45°<br>**----- End of picture text -----**<br> ## **Suggested Pad Layout** Please see http://www.diodes.com/package-outlines.html for the latest version. **SO-8** **==> picture [148 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> a X1<br>Y1<br>a<br>Y<br>Age C X<br>**----- End of picture text -----**<br> **==> picture [10 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> Y1<br>**----- End of picture text -----**<br> **==> picture [103 x 55] intentionally omitted <==** **----- Start of picture text -----**<br> Dimensions Value (in mm)<br>C 1.27<br>X 0.802<br>X1 4.612<br>Y 1.505<br>Y1 6.50<br>**----- End of picture text -----**<br> 8 of 9 **www.diodes.com** DMC3021LSD Document number: DS32152 Rev. 4 - 2 February 2020 © Diodes Incorporated **DMC3021LSD** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. ## **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: - A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2020, Diodes Incorporated **www.diodes.com** 9 of 9 **www.diodes.com** DMC3021LSD Document number: DS32152 Rev. 4 - 2 February 2020 © Diodes Incorporated
Updated at June 9, 2026
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