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DMC3021LK4-13
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 14 A, 14 A, 0.021 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 4Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: TO-252 (DPAK)
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 22W
- Power Dissipation P Channel: 22W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 14A
- Continuous Drain Current Id P Channel: 14A
- Drain Source On State Resistance N Channel: 0.021ohm
- Drain Source On State Resistance P Channel: 0.039ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.177 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**DMC3021LK4** ~~—~~
**COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET**
## **Product Summary**
|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|---|
|||||
|**Device**|**V(BR)DSS**|**RDS(ON) max**|**ID max**<br>**TC = +25°C**|
|Q1|30V|21mΩ@VGS= 10V|14A|
|||32mΩ@VGS= 4.5V|14A|
|Q2|-30V|39mΩ@VGS= -10V|-14A|
|||53mΩ@VGS= -4.5V|-14A|
## **Description and Applications**
## **Features and Benefits**
- 0.6mm Profile – Ideal for Low Profile Applications 2
- • PCB Footprint of 4mm
- Low Gate Threshold Voltage
- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)**
- **Halogen and Antimony Free. “Green” Device (Note 3)**
- **Qualified to AEC-Q101 Standards for High Reliability**
## **Mechanical Data**
- Case: TO252-4
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Motor Control
- Power Management Functions
- DC-DC Converters
- Backlighting
- Case Material: Molded Plastic, "Green" Molding Compound UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Connections Indicator: See diagram
- Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
- Weight: 0.027 grams (approximate)
**==> picture [467 x 111] intentionally omitted <==**
**----- Start of picture text -----**<br>
TO252-4L<br>D<br>D D<br>G2 G1<br>D S2 S1<br>S2 G2 S1 G1<br>Top View Bottom View Pinout Top View N-Channel MOSFET P-Channel MOSFET<br>**----- End of picture text -----**<br>
## **Ordering Information** (Note 4)
|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMC3021LK4-13|TO252-4|2500/Tape&Reel|
- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
## **Marking Information**
= Manufacturer’s Marking C3021L = Product Type Marking Code **C3021L** YYWW = Date Code Marking **YYWW** YY = Year (ex: 11 = 2011) WW = Week (01 - 53)
1 of 10 **www.diodes.com**
DMC3021LK4 Document number: DS35082 Rev. 5 - 2
April 2014 © Diodes Incorporated
**DMC3021LK4**
## **Maximum Ratings N-CHANNEL – Q1** (@TA = +25°C, unless otherwise specified.)
|**Maximum Ratingsgss** **N-CHANNEL – Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **N-CHANNEL – Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **N-CHANNEL – Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **N-CHANNEL – Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **N-CHANNEL – Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **N-CHANNEL – Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|30|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|9.4<br>7.5|A|
|Continuous Drain Current (Note 6) VGS= 10V|Steady<br>State|TC= +25°C<br>TC= +70°C|ID|14<br>14|A|
|Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)|||IDM|70|A|
|Avalanche Current, (Notes 7) L = 0.1mH|||IAS|16|A|
|Avalanche Energy, (Notes 7) L = 0.1mH|||EAS|13|mJ|
## **Maximum Ratings P-CHANNEL – Q2** (@TA = +25°C, unless otherwise specified.)
|**Maximum Ratingsgss** **P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|-30|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= -10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-6.8<br>-5.3|A|
|Continuous Drain Current (Note 6) VGS= -10V|Steady<br>State|TC= +25°C<br>TC= +70°C|ID|-14<br>-14|A|
|Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)|||IDM|-50|A|
|Avalanche Current, (Notes 7) L = 0.1mH|||IAS|-16|A|
|Avalanche Energy, (Notes 7) L = 0.1mH|||EAS|13|mJ|
## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)
|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation (Note 6)|TA= +25°C|PD|2.7|W|
||TA= +70°C||1.7||
|Total Power Dissipation (Note 6)|TC= +25°C||22||
||TC= +70°C||14||
|Thermal Resistance, Junction to Ambient (Note 6)|Steady state|RθJA|46|°C/W|
|Thermal Resistance, Junction to Case (Note 6)|Steady state|RθJC|5.5||
|Operating and Storage Temperature Range||TJ, TSTG|-55 to +150|°C|
- Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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DMC3021LK4 Document number: DS35082 Rev. 5 - 2
April 2014 © Diodes Incorporated
**DMC3021LK4**
## **Electrical Characteristics N-CHANNEL – Q1** (@TA = +25°C, unless otherwise specified.)
|**Electrical Characteristics** **N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **<br>**Max**|**Unit**<br>**Test Condition**|
|**OFF CHARACTERISTICS(Note 8) **|||||
|Drain-Source Breakdown Voltage|BVDSS|30|—<br>—|V<br>VGS= 0V, ID= 250μA|
|Zero Gate Voltage Drain Current@TC= +25°C|IDSS|—|—<br>1.0|μA<br>VDS= 30V, VGS= 0V|
|Gate-Source Leakage|IGSS|—|—<br>±100|nA<br>VGS= ±20V, VDS= 0V|
|**ON CHARACTERISTICS(Note 8) **|||||
|Gate Threshold Voltage<br>~~Ee~~|VGS(th)<br>~~Ee~~|1<br>~~Ee~~|1.5<br>2.1<br>~~Ee~~|V<br>VDS= VGS, ID= 250μA<br>~~Ee~~|
|Static Drain-Source On-Resistance<br>~~Ee~~|RDS(ON)<br>~~Ee~~|—<br>~~Ee~~|14<br>21<br>~~Ee~~|mΩ<br>VGS= 10V, ID= 7A<br>VGS= 4.5V, ID= 5.6A<br>~~Ee~~|
|||—<br>~~Ee~~|18<br>32<br>~~Ee~~||
|Forward Transfer Admittance<br>~~Ee~~||Yfs|<br>~~Ee~~|—<br>~~Ee~~|8.5<br>—<br>~~Ee~~|S<br>VDS= 5V, ID= 7A<br>~~Ee~~|
|Diode Forward Voltage|VSD|—|0.7<br>1.0|V<br>VGS= 0V, IS= 1A|
|**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~———~~<br>~~ee~~|||||
|Input Capacitance<br>~~———~~|Ciss|—|751<br>—<br>~~e~~|pF<br>VDS= 10V, VGS= 0V,<br>f = 1.0MHz<br>pF<br>pF<br>~~ee~~|
|Output Capacitance<br>~~———~~|Coss|—|121<br>—<br>~~e~~||
|Reverse Transfer Capacitance<br>~~———~~|Crss|—|110<br>—<br>~~e~~||
|Gate Resistance<br>~~———~~|Rg|—|1.5<br>—<br>~~e~~|Ω<br>VDS= 10V, VGS= 0V,f = 1.0MHz<br>~~ee~~|
|Total Gate Charge (4.5V)<br>~~———~~|Qg|—|9<br>—<br>~~e~~|nC<br>VGS= 10V, VDS= 15V,<br>ID= 6A<br>nC<br>nC<br>nC<br>~~ee~~|
|Total Gate Charge (10V)|Qg|—|17.4<br>—||
|Gate-Source Charge|Qgs|—|2.2<br>—||
|Gate-Drain Charge|Qgd|—|3<br>—||
|Turn-On Delay Time|tD(on)|—|2.5<br>—|ns<br>VDD= 15V, VGS= 10V,<br>RG= 6Ω, RL= 1.8Ω, ID= 6.7A<br>ns<br>ns<br>ns|
|Turn-On Rise Time|tr|—|6.6<br>—||
|Turn-Off Delay Time|tD(off)|—|19.0<br>—||
|Turn-Off Fall Time|tf|—|6.3<br>—||
Notes: 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing.
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30 20<br>VGS = 10V VGS = 4.5V<br>VGS = 4.0V VDS = 5.0V<br>25<br>15<br>20 Z| TT<br>15 V GS = 3.5V 10<br>We<br>10 TA = 150°C<br>TA = 85°C<br>5<br>VGS = 3.0V TA = 125°C<br>5 poo TA = 25°C<br>0 VGS = 2.5V 0 SH TA = -55°C<br>0 LE 0.5 1 1.5 2 0 —— 1 2 3 4 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Fig.1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics<br>, DRAIN CURRENT (A)<br>, DRAIN CURRENT (A)ID ID<br>**----- End of picture text -----**<br>
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DMC3021LK4 Document number: DS35082 Rev. 5 - 2
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**DMC3021LK4**
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0.05 0.05<br>VGS = 4.5V<br>0.04 0.04 TA = 150°C<br>PTT LE<br>0.03 0.03 TA = 125°C<br>—E TA = 85°C<br>TA = 25°C<br>0.02 VGS = 4.5V 0.02<br>TA = -55°C<br>VGS = 10V<br>0.01 0.01 TOT<br>0 0 ELLE<br>0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 EL 18 20<br>ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A)<br>Fig. 3 Typical On-Resistance vs. Fig. 4 Typical On-Resistance vs.<br>Drain Current and Gate Voltage Drain Current and Temperature<br>1.7 0.05<br>VGS = 10V<br>1.5 ID = 10A 0.04<br>SY TELE<br>1.3<br>VGS = 4.5V<br>oh 0.03 I D = 5A Ee<br>1.1 VIDGS= 5A= 4.5V<br>Hoa 0.02 Tere<br>0.9 VGS = 10V<br>Een aaa ID = 10A<br>ATL) 0.01 Eber<br>0.7<br>0.5 0<br>-50 TTT -25TJ, JUNCTION TEMPERATURE (0 25 LLL 50 75 100 °C)125 150 -50 EEL -25TJ, JUNCTION TEMPERATURE (0 25 50 ELEL 75 100 °C)125 150<br>Fig. 6 On-Resistance Variation with Temperature<br>Fig. 5 On-Resistance Variation with Temperature<br>2.5 20<br>18<br>16<br>2 PEL ET yyy Pi t_tE ELLE yy<br>14<br>— ID = 1mA HEECCEHE<br>12<br>1.5 10<br>Rese] [|] FERRER<br>8 T A = 25°C<br>6<br>ef] I PRAY D = 250µA SEE fe<br>1<br>4<br>2<br>0.5 ef] |SS 0 “COLCA[CECE PT tT [Tyee]<br>-50 -25 0 25 50 75 100 125 150 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2<br>TJ, JUNCTION TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 On-Resistance Variation with Temperature Fig. 8 Diode Forward Voltage vs. Current<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (Normalized) , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>V<br>**----- End of picture text -----**<br>
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DMC3021LK4 Document number: DS35082 Rev. 5 - 2
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**DMC3021LK4**
**==> picture [474 x 432] intentionally omitted <==**
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10,000 COeeee 10,000 f=1MHz eeeS SS eS SS (<br>TA = 150°CA = 150°C = 150°C<br>—_——aa —— eea a ce |<br>es ee a<br>1,000 TA = 125°CA = 125°C = 125°C125°C°CC<br>ee ee ne ne i |)<br>eeaa ee|| 1,000 ~— a ee Ciss<br>100 J} TAA = 85°C°CC |__| a<br>aAaAaa SN el Coss<br>a ee 100 —_—_<br>ee |<br>10 Crss<br>_—opeeopeeee TA = 25A = 25 = 2525 ° C _——— i ane<br>See a a<br>1 10<br>0 Fett 5 10 fff 15 20 25 30 0 | | 5 10 fT 15 | 20 | ff 25 30<br>VDS, DRAIN-SOURCE VOLTAGE (V)DS, DRAIN-SOURCE VOLTAGE (V), DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE(V)<br>Fig. 9 Typical Drain-Source Leakage Current vs. Voltage Fig. 10 Typical Junction Capacitance<br>10 100<br>/ ee RLimitedDS(ON)<br>Poee NECNee i<br>8<br>VIDDS= 6A= 15V / 10 UNPN—"_RRY | ANNANR PNBani<br>6 / ee DC P W = 10s TCASZIDSKNAAN NANARANT TSEoo<br>We | r|| PW = 1s PNT NZNOINDORE TSOSEPT<br>1 | dt PW = 100ms Ne Nl<br>4 ——Eeeee oe oo PW = 10msP W = 1ms ESTATENSCONSEBNET[<aNENS EES NEELSSE<br>P W = 100µs<br>PT TTT JINEIN Baal<br>0.1 ETE| PW = 10µs NTT<br>2<br>T J(MAX) = 150°C a0<br>TA = 25°C<br>Single Pulse<br>0 0.01 i<br>0 2 4 6 8 10 12 14 16 18 20 0.1 1 10 A 100<br>QG - (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 11 Gate Charge Characteristics Fig. 12 SOA, Safe Operation Area<br>CT, JUNCTION CAPACITANCE (pF)<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>
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10,000 COeeee<br>TA = 150°CA = 150°C = 150°C<br>—_——aa ——<br>es ee<br>1,000 TA = 125°CA = 125°C = 125°C125°C°CC<br>ee ee ne ne i |)<br>eeaa ee||<br>100 J} TAA = 85°C°CC |__|<br>aAaAaa<br>a ee<br>10<br>_—opeeopeeee TA = 25A = 25 = 2525 ° C _——— i<br>See a<br>1<br>0 Fett 5 10 fff 15 20 25 30<br>VDS, DRAIN-SOURCE VOLTAGE (V)DS, DRAIN-SOURCE VOLTAGE (V), DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Typical Drain-Source Leakage Current vs. Voltage<br>, LEAKAGE CURRENT (nA)<br>IDSS<br>**----- End of picture text -----**<br>
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DMC3021LK4 Document number: DS35082 Rev. 5 - 2
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**DMC3021LK4**
## **Electrical Characteristics P-CHANNEL – Q2** (@TA = +25°C, unless otherwise specified.)
|||||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ **<br>**Max**|**Max**<br>**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 8) **||||||
|Drain-Source Breakdown Voltage|BVDSS|-30|—<br>—|V|VGS= 0V, ID= -250μA|
|Zero Gate Voltage Drain Current@TC= +25°C|= +25°C<br>IDSS|—|—<br>-1|μA|VDS= -30V, VGS= 0V|
|Gate-Source Leakage|IGSS|—|—<br>±100|±100<br>nA|VGS= ±20V, VDS= 0V|
|**ON CHARACTERISTICS(Note 8) **||||||
|Gate Threshold Voltage<br>~~—~~|VGS(th)<br>~~—~~|-1<br>~~—~~|-1.7<br>-2.2<br>~~—~~|V<br>~~—~~|VDS= VGS, ID= -250μA<br>~~—~~|
|Static Drain-Source On-Resistance<br>~~—~~|RDS (ON)<br>~~—~~|—<br>~~—~~|30<br>39<br>~~—~~|mΩ<br>~~—~~|VGS= -10V, ID= -4.3A<br>~~—~~|
|||—<br>~~—~~|42<br>53<br>~~—~~||VGS= -4.5V, ID= -3.7A<br>~~—~~|
|Forward Transfer Admittance<br>~~—~~||Yfs|<br>~~—~~|—<br>~~—~~|10<br>—<br>~~—~~|S<br>~~—~~|VDS= -5V, ID= -4.3A<br>~~—~~|
|Diode Forward Voltage|VSD|—|-0.75<br>-1.0|V|VGS= 0V, IS= -1A|
|**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~—<—_—~~<br>~~ee~~||||||
|Input Capacitance<br>~~—<—_—~~|Ciss<br>~~—<—_—~~|—|1039<br>—|pF<br>~~e~~|VDS= -10V, VGS= 0V,<br>f = 1.0MHz<br>~~ee~~|
|Output Capacitance<br>~~—<—_—~~|Coss<br>~~—<—_—~~|—|144<br>—|pF<br>~~e~~||
|Reverse Transfer Capacitance<br>~~—<—_—~~|Crss<br>~~—<—_—~~|—|134<br>—|pF<br>~~e~~||
|Gate Resistance<br>~~—<—_—~~|Rg<br>~~—<—_—~~|—|13<br>—|Ω<br>~~e~~|VDS= 0V, VGS= 0V,f = 1.0MHz<br>~~ee~~|
|Total Gate Charge (4.5V)<br>~~—<—_—~~|Qg<br>~~—<—_—~~|—|10.1<br>—|nC<br>~~e~~|VGS= -10V, VDS= -15V,<br>ID= -6A<br>~~ee~~|
|Total Gate Charge (10V)|Qg|—|21.1<br>—|nC||
|Gate-Source Charge|Qgs|—|2.8<br>—|nC||
|Gate-Drain Charge|Qgd|—|3.2<br>—|nC||
|Turn-On Delay Time|tD(on)|—|10.1<br>—|ns|VDS= -15V, VGS= -10V,<br>RG= 6Ω, ID= -1A|
|Turn-On Rise Time|tr|—|6.5<br>—|ns||
|Turn-Off Delay Time|tD(off)|—|50.1<br>—|ns||
|Turn-Off Fall Time|tf|—|22.2<br>—|ns||
Notes: 8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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30 20<br>-VGS = 10V -VGS = 4.5V VDS = -5.0V<br>25<br>-VGS = 4.0V 15<br>20<br>-VGS = 3.5V<br>15 TooeF 10 TT T A = 85°C<br>10<br>-VGS = 3.0V TA = 125°C<br>5<br>5 fe -V GS = 2.5V pe TA = 150°C TA = 25°C<br>-VGS = 2.0V TA = -55°C<br>0 0<br>0 0.5 1 1.5 2 0 1 2 3 4 5<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Fig.13 Typical Output Characteristics Fig. 14 Typical Transfer Characteristics<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>D D<br>-I -I<br>**----- End of picture text -----**<br>
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DMC3021LK4 Document number: DS35082 Rev. 5 - 2
April 2014 © Diodes Incorporated
**DMC3021LK4**
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0.10 0.12<br>VGS = 4.5V<br>CoE<br>0.10<br>0.08 0.08 CCE<br>0.06 TA = 150°C<br>TA = 125°C<br>0.06 Ce coer<br>0.04 -VGS = 4.5V 0.04 EAST TA = 85°C<br>TA = 25°C<br>0.02 -VGS = 10V 0.02 poeeeeeaee TA = -55°C<br>0 0 STEEL LC<br>0 5 10 15 20 0 2 4 6 8 10 12 14 16 18 20<br>-ID, DRAIN-SOURCE CURRENT (A) -ID, DRAIN CURRENT (A)<br>Fig. 15 Typical On-Resistance vs. Fig. 16 Typical On-Resistance vs.<br>Drain Current and Gate Voltage Drain Current and Temperature<br>1.7 0.08<br>1.5<br>0.06<br>1.3 H e y -VGS = 4.5V<br>a -ID = 5A<br>1.1 0.04<br>Sane? 260 -VGS = 10V<br>-ID = 10A<br>0.9 -VGS = 10V<br>ert -ID = 10A<br>0.02<br>0.7 A<br>0.5 ECEECEEL 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Fig. 17 On-Resistance Variation with Temperature Fig. 18 On-Resistance Variation with Temperature<br>2.5 20<br>18<br>2 LEELA 16 FEEEEE ELEC<br>—<br>-ID = 250µA 14<br>1.5 12<br>SBT -ID = 1mA TA = 25°C<br>10<br>1 LLLP 8 EEE<br>6<br>0.5 ALLELE 4 CCECEHECEEL<br>2<br>0 Pry yyy 0 P L; TTLLEYLV E LLL EL |<br>-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>TJ, JUNCTION TEMPERATURE (°C) -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 19 On-Resistance Variation with Temperature Fig. 20 Diode Forward Voltage vs. Current<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (Normalized)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>S<br>-I<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>-V<br>**----- End of picture text -----**<br>
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DMC3021LK4 Document number: DS35082 Rev. 5 - 2
April 2014 © Diodes Incorporated
**DMC3021LK4**
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10,000 _—_———————— 10,000 Ca<br>f = 1MHz<br>_ a (SC eee[OT<br>eS a CC<br>a a GG<br>1,000 TA = 150°C<br>—————————————— ee ee ee ee ee<br>ars eea ee TA = 125°C ja 1,000 a ee Ciss ee if<br>100 [—___—————J | | | | ———<—————— a |<br>TA = 85°C<br>—— ee A GO<br>C oss<br>10 _—_—_—_=_ _ = —==—= =——<br>a 100 — Crss _—<br>cr a _<br>1 I| N f[ ||| esa eeaee ee<br>— > ——— a<br>TA = 25°C<br>So oe<br>0.1 Nae 10 |<br>0 5 10 15 20 25 30 0 5 10 | 15 | tf 20 25 30<br>-VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE(V)<br>Fig. 21 Typical Drain-Source Leakage Current vs. Voltage Fig. 22 Typical Junction Capacitance<br>, LEAKAGE CURRENT (nA)<br>DSS<br>-I<br>CT, JUNCTION CAPACITANCE (pF)<br>**----- End of picture text -----**<br>
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10 100 RDS(ON) |ee<br>Limited [re<br>Do<br>a ee<br>8<br>RNPLT<br>10 ONS<br>6 VIDDS= 6A= 15V |_3e7SFRaa| DC P W TNCPSCISKOT = 10s TARANOSROARRRRNSRPKAAAOORSEBEBEEE<br>P W = 1s<br>1 {| PW = 100ms SONA<br>eeLrin PW = 10ms ROTO[INT NNN<br>4 es PW = 1ms CONTAYOSOENEEOIA rr<br>P W = 100µs<br>re P W = 10µs IN, NT<br>0.1 ime{ff}ttf} ff ft X N PLTtNX<br>2 see es eee<br>TJ(MAX) = 150°C eeesee<br>T A = 25°C ee ee<br>Single Pulse<br>0 0.01<br>0 5 10 15 20 25 0.1 1 10 100<br>QG - (nC) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 23 Gate Charge Characteristics Fig. 24 SOA, Safe Operation Area<br>1 (a aaa a a aia aa a<br>AT D = 0.7<br>D = 0.5<br>on | nn<br>D = 0.3 A a nh et<br>errr<br>eT<br>0.1 Sad D = 0.1 a soareT D = 0.9 eaetMeee ae eat ener IEese tee LUmena<br>ee aea ‘PA ~ 2 0SG OG SO OO<br>a9c<br>D = 0.05<br>maps’ yt ee<br>silt eya ee<br>D = 0.02<br>eT AIRE TE<br>0.01 Ft D = 0.01 Te LCI eeLATE EINE ELUTEer<br>Pett AA oe et oe oe<br>meA<br>Lo D = 0.005 LJ DAA A TT TT R θJA (t) = r(t) * R θJA<br>Single Pulse RDuty Cycle, D = t1 / t2 θJA = 46°C/W<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>T1, PULSE DURATION TIME (sec)<br>Fig. 25 Transient Thermal Resistance<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>D<br>-I<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>
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DMC3021LK4 Document number: DS35082 Rev. 5 - 2
April 2014 © Diodes Incorporated
**www.diodes.com**
**DMC3021LK4**
## **Package Outline Dimensions**
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
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< E > ——<——_ TO252-4<br>A Dim Min Max Typ<br>b3 c2 A 2.19 2.39 2.29<br>L3 A1 0.00 0.13 0.08<br>C c ) A2 0.97 1.17 1.07<br>3— b 0.51 0.71 0.583<br>A2 E1 b2 0.61 0.79 0.70<br>D b3 5.21 5.46 5.33<br>H :|FF c2 0.45 0.58 0.531<br>> D 6.00 6.20 6.10<br>D1 5.21 − −<br>H | L4 A1 es e − − 1.27<br>I J Hl es<br>E 6.45 6.70 6.58<br>L E1 4.32 − −<br>H 9.40 10.41 9.91<br>4X b2 meee e 5X b >A a ooFF L3 L 1.40 0.88 1.78 1.27 1.591.08<br>FF L4 0.64 1.02 0.83<br>a 0° 10° −<br>es<br>————— All Dimensions in mm<br>**----- End of picture text -----**<br>
## **Suggested Pad Layout**
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
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X1<br>Y1<br>Y2<br>i<br>c1 Y3<br>Y<br>*<br>X (4x) c<br>**----- End of picture text -----**<br>
|**Dimensions**|**Value(in mm)**|
|---|---|
|**c**|1.27|
|**c1**|2.54|
|**X**|1.00|
|**X1**|5.73|
|**Y**|2.00|
|**Y1**|6.17|
|**Y2**|1.64|
|**Y3**|2.66|
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DMC3021LK4 Document number: DS35082 Rev. 5 - 2
April 2014 © Diodes Incorporated
**DMC3021LK4**
## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2014, Diodes Incorporated
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DMC3021LK4 Document number: DS35082 Rev. 5 - 2
April 2014 © Diodes Incorporated
Updated at June 9, 2026
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