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DMC3016LNS-7
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 9 A, 9 A, 0.016 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: PowerDI3333
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.3W
- Power Dissipation P Channel: 1.3W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 9A
- Continuous Drain Current Id P Channel: 9A
- Drain Source On State Resistance N Channel: 0.016ohm
- Drain Source On State Resistance P Channel: 0.028ohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.244 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**DMC3016LNS** &. [-—— **COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET POWERDI** ## **Product Summary** |**Device**|**BVDSS**|**RDS(ON) max**|**ID max**<br>**TA = +25°C**| |---|---|---|---| |Q1|30V|16mΩ @ VGS= 10V|9.0A| |||20mΩ @ VGS= 4.5V|8.0A| |Q2|-30V|28mΩ @ VGS= -10V|-6.8A| |||38mΩ @ VGS= -4.5V|-5.8A| ## **Features** - Low On-Resistance - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - Complementary Pair MOSFET - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** - **Halogen and Antimony Free. “Green” Device (Note 3)** ## **Description** This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. ## **Mechanical Data** - Case: POWERDI[®] 3333-8 (Type UXB) - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 ## **Applications** - Power Management Functions - Analog Switch - Terminal Connections: Waiting Update - Terminal: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 - Weight: 0.072 grams (Approximate) POWERDI[®] 3333-8 (Type UXB) **==> picture [63 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> Equivalent Circuit<br>**----- End of picture text -----**<br> **==> picture [37 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> Top View<br>**----- End of picture text -----**<br> **==> picture [69 x 94] intentionally omitted <==** **----- Start of picture text -----**<br> Pin 1<br>S1 G1<br>S2<br>G2<br>D1<br>D1D2<br>D2<br>**----- End of picture text -----**<br> **==> picture [46 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> Bottom View<br>**----- End of picture text -----**<br> **==> picture [213 x 122] intentionally omitted <==** **----- Start of picture text -----**<br> D1 D2<br>G1 G2<br>S1 S2<br>N-Channel MOSFET P-Channel MOSFET<br>**----- End of picture text -----**<br> ## **Ordering Information** (Note 4) |**Ordering Informationg Information Information** (Note 4)||| |---|---|---| |**Part Number**|**Case**|**Packaging**| |DMC3016LNS-7|POWERDI®3333-8(Type UXB)|2000/Tape & Reel| |DMC3016LNS-13|POWERDI®3333-8(Type UXB)|3000/Tape & Reel| - Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. ## **Marking Information** **==> picture [24 x 51] intentionally omitted <==** **----- Start of picture text -----**<br> SG5 C60<br>YYWW<br>**----- End of picture text -----**<br> SG5 = Product Type Marking Code ~~|~~ YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 16 for 2016) WW = Week Code (01 to 53) PowerDI is a registered trademark of Diodes Incorporated. DMC3016LNS Document number: DS38129 Rev. 2 - 2 1 of 10 **www.diodes.com** July 2016 © Diodes Incorporated **DMC3016LNS** **Maximum Ratings Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.) **==> picture [521 x 102] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||| |---|---|---|---|---|---|---|---| |GO|Characteristic|Symbol|GO|Value|Units| |a|Drain-Source Voltage|VDSS|30|V| |GO|Gate-Source Voltage|VGSS|±20|V| |Continuous Drain Current (Note 6) VGS = 10V|Steady State|TTAA = +25°C = +70°C|ID|9.0 7.1|A| |SO|Maximum Body Diode Forward Current (Note 6)|IS|A| |a|Pulsed Drain Current (380μs pulse, Duty cycle = 1%)|IDM|55|A| |QO|Avalanche Current (L = 0.1mH)|(Note 7)|IAS|22|A| |a|Avalanche Energy|(L = 0.1mH)|(Note 7)|GG|EAS|24|mJ| **----- End of picture text -----**<br> **Maximum Ratings Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.) ~~GO~~ **Characteristic Symbol Value Units** ~~a~~ Drain-Source Voltage VDSS -30 V ~~a~~ Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = -10V Steady State TTAA = +25°C = +70°C ID -6.8 -5.7 A ~~a~~ Maximum Body Diode Forward Current (Note 6) IS A ~~a~~ Pulsed Drain Current (380μs Pulse, Duty Cycle = 1%) IDM -40 A ~~a~~ Avalanche Current (L = 0.1mH) (Note 7) IAS -22 A ~~a~~ Avalanche Energy (L = 0.1mH) (Note 7) EAS 24 mJ **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) **==> picture [522 x 79] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||| |---|---|---|---|---|---|---| |OG|Characteristic|Symbol|Value|Units| |Total Power Dissipation|TA = +25°C|PD|1.3|W| |po|Note|5)| |OQ|Thermal Resistance, Junction to Ambient (Note 5)|Steady State|RJA|98|°C/W| |poNotes)|Total Power Dissipation|TA = +25°C|PD|W| |CG|Thermal Resistance, Junction to Ambient (Note 6)|Steady State|RJA|GO|<=|°C/W| |CC|Thermal Resistance, Junction to Case (Note 6)|RJC|12|°C/W| |QO|Operating and Storage Temperature Range|TJ, TSTG|-55 to +150|°C| **----- End of picture text -----**<br> PowerDI is a registered trademark of Diodes Incorporated. DMC3016LNS Document number: DS38129 Rev. 2 - 2 2 of 10 **www.diodes.com** July 2016 © Diodes Incorporated **DMC3016LNS** **Electrical Characteristics N-CHANNEL – Q1** (@TA = +25°C, unless otherwise specified.) **==> picture [522 x 610] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---| |Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition| |OFF CHARACTERISTICS (Note 8)| |Drain-Source Breakdown Voltage|BVDSS|30|||V|VGS = 0V, ID = 250μA| |_| |Zero Gate Voltage Drain Current TJ = +25°C|IDSS|||1|μA|VDS = 30V, VGS = 0V| |Gate-Source Leakage|IGSS|||±100|nA|VGS = ±20V, VDS = 0V| |————| |ON CHARACTERISTICS (Note 8)| |ef|Gate Threshold Voltage|VGS(TH)|1.4||2.0|V|VDS = VGS, ID = 250μA| |—|Static Drain-Source On-Resistance|RDS(ON)||12 16|16 20|m|VVGSGS = 10V = 4.5V,, I IDD = 7A = 7A| |a|————————| |ff|Diode Forward Voltage|VSD||0.70|1.2|V|VGS = 0V, IS = 1A| |DYNAMIC CHARACTERISTICS (Note 9)| |Cn|Input Capacitance|Ciss||1184|| |Output Capacitance|Coss||137||pF|VDS = 15V, VGS = 0V,| |f = 1.0MHz| |Reverse Transfer Capacitance|Crss||107|| |Gate Resistance|Rg||3.0|||VDS = 0V, VGS = 0V, f = 1.0MHz| |a|Total Gate Charge (VGS = 4.5V)|Qg||9.5|| |Total Gate CharGate-Source Charge g(e VGS = 10V)|QQgsg||3.8 21||nC|VDS = 15V, ID = 12A| |===|Gate-Drain Charge|Qgd||4.1|| |a|Turn-On Delay Time|tD(ON)||4.5|| |Cn|Turn-On Rise Time|tR||3.3||VDD = 15V, VGS = 10V,| |ns| |Turn-Off Delay Time|tD(OFF)||14||RL = 1.5Ω, RG = 3Ω| |Turn-Off Fall Time|tF||3.6|| |————ee|Reverse RecoverReverse Recoveryy Time Charge|QtRRRR||9.3 2.5||ee|nC ns|IF = 12A, di/dt = 500A/μs| |ee|ee| |Electrical Characteristics P-CHANNEL|– Q2|(@TA = +25°C, unless otherwise specified.)| |Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition| |OFF CHARACTERISTICS (Note 8)| |ee|Drain-Source Breakdown Voltage|BVDSS|-30|||V|VGS = 0V, ID = -250μA| |Zero Gate Voltage Drain Current TJ = +25°C|IDSS|||-1|μA|VDS = -30V, VGS = 0V| |Gate-Source Leakage|IGSS|||±100|nA|VGS = ±20V, VDS = 0V| |———| |ON CHARACTERISTICS (Note 8)| |ay|Gate Threshold Voltage|VGS(TH)|ay|-1.2|ay||ae|-2.4|ee|V|ey|VDS = VGS, ID = -250μA| |Static Drain-Source On-Resistance|RDS(ON)||22 32|28 38|mΩ|VVGSGS = -10V = -4.5V,, I IDD = -7A = -6.2A| |afe|Diode Forward Voltage|VSD||—|-0.7|-1.2|V|VGS = 0V, IS = -2.1A| |DYNAMIC CHARACTERISTICS (Note 9)| |I|Input Capacitance|Ciss||1,188|| |Cn|Output Capacitance|Coss||154||pF|Vf = 1MHz DS = -15V, VGS = 0V,| |Reverse Transfer Capacitance|Crss||116|| |Gate Resistance|RG||9||Ω|VDS = 0V, VGS = 0V, f = 1MHz| |Total Gate Charge (VGS = -4.5V)|Qg||9.5|| |Total Gate CharGate-Source Charge g(e VGS = -10V)|QQgsg||19.7 3.1||nC|VDS = -15V, ID = -7A| |Gate-Drain Charge|Qgd||3.2|| |—————I|Turn-On Delay Time|tD(ON)||3.7||ee| |Cn|Turn-On Rise Time|tR||2.6||ns|VGS = -10V, VDS = -15V,| |Turn-Off Delay Time|tD(OFF)||36||RG = 6Ω, ID = -7A| |Turn-Off Fall Time|tF||22|| |Reverse Recovery Time|tRR||10.4||ns| |ee|Reverse Recovery Charge|QRR||3.2||nC|IF = -7A, di/dt = 100A/μs| |Notes:|5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.| **----- End of picture text -----**<br> 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. PowerDI is a registered trademark of Diodes Incorporated. DMC3016LNS Document number: DS38129 Rev. 2 - 2 3 of 10 July 2016 © Diodes Incorporated **www.diodes.com** **DMC3016LNS** ## **Typical Characteristics - N-CHANNEL** **==> picture [509 x 637] intentionally omitted <==** **----- Start of picture text -----**<br> 30.0 30<br>VGS = 10.0V VDS = 5.0V<br>25.0 oa VGS = 4.5V 25 ee eee<br>VGS = 4.0V<br>VGS = 3.5V<br>20.0 15.0 aa WA 2015 e eeeee<br>VGS = 3.0V<br>10.0 10<br>125 ℃ 85 ℃<br>5.0 VGS = 2.5V 5 150 ℃ 25 ℃<br>-55 ℃<br>0.0 po 0 | aa<br>0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>20.00 18.00 a 10090 TCC<br>16.00 80<br>14.00 Pee 70 AIEEE<br>12.00 VGS = 4.5V 60<br>10.00 aa 50 HR<br>8.00 6.00 ee MF VGS = 10.0V 4030 FICEFEEL EEE<br>ID = 12A<br>4.00 a 20 a<br>2.00 a 10 i<br>0.00 PEE 0 CPCS<br>0 5 10 15 20 25 30 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A) Figure 4. Typical Transfer CharacteristicVGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current and<br>Gate Voltage<br>0.02 2<br>VGS = 10V 150 ℃ 1.8<br>0.015 1.6 Pt tT ttt tf<br>125 ℃ VGS = 10V, ID = 10A<br>1.4 ye<br>0.01 85 ℃ 1.2 ee a<br>25 ℃<br>1 a VGS = 4.5V, ID = 5A<br>-55 ℃<br>0.005 0.8 | ee<br>0.6 mT tT | tt<br>ttt]<br>0 eric 0.4 Ftadte| fe<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs. Drain Current and Figure 6. On-Resistance Variation with Temperature<br>Temperature<br>, DRAIN CURRENT (A)ID , DRAIN CURRENT (A)ID<br>(mΩ)<br>(mΩ)<br>, DRAIN-SOURCE ON-RESISTANCE , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) RDS(ON)<br>R<br>(Ω)<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>DS(ON) R<br>R<br>**----- End of picture text -----**<br> PowerDI is a registered trademark of Diodes Incorporated. DMC3016LNS Document number: DS38129 Rev. 2 - 2 4 of 10 **www.diodes.com** July 2016 © Diodes Incorporated **DMC3016LNS** **==> picture [234 x 202] intentionally omitted <==** **----- Start of picture text -----**<br> 0.03<br>0.02 VGS = 4.5V, ID = 5AGS = 4.5V, ID = 5A= 4.5V, ID = 5AD = 5A= 5A<br>0.01<br>VGS = 10V, ID = 10AGS = 10V, ID = 10A= 10V, ID = 10AD = 10A= 10A<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (J, JUNCTION TEMPERATURE (, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Temperature<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> **==> picture [493 x 662] intentionally omitted <==** **----- Start of picture text -----**<br> 0.03 3<br>2.5<br>0.02 VGS = 4.5V, ID = 5AGS = 4.5V, ID = 5A= 4.5V, ID = 5AD = 5A= 5A 2 ID = 1mA<br>_—__]<br>1.5 meat h —-EPa<br>ID = 250μA<br>0.01 1 S S SR<br>VGS = 10V, ID = 10AGS = 10V, ID = 10A= 10V, ID = 10AD = 10A= 10A<br>0.5 PEELE<br>0 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (J, JUNCTION TEMPERATURE (, JUNCTION TEMPERATURE ( ℃ ) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Temperature Figure 8. Gate Threshold Variation vs. Junction<br>Temperature<br>30 10000<br>f = 1MHz<br>VGS = 0V<br>25 eee |e =——————<br>20 ee e || tee 1000 Ee a ee es ee ee<br>Ciss<br>AOO<br>15 ee |e = es<br>Coss<br>TA = 150 [o] C<br>10 e e / se 100 SS —_—— MN<br>TA = 125 [o] C Crss<br>5 TA = 85 [o] C 7/71.I, / a———=_———— ————<br>Lf<br>TA = 25 [o] C<br>TA = -55 [o] C<br>0 Df 10 ee<br>0 0.3 0.6 0.9 1.2 0 5 10 15 20 25 30<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE(V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>10 100<br>RDS(ON) Limited<br>PW =100µs<br>8 y,Ya EE a ee ee | nl<br>10<br>6 y, RRO RN Baal<br>1 PW = 1ms<br>4 PW = 10ms<br>VDS = 15V, ID = 12A PW = 100ms<br>Ys PW = 1s 7S N BBRG<br>0.1<br>2 TJ(Max) = 150 ℃ TC = 25 ℃<br>Single Pulse PW<br>DUT on 1*MRP Board DC BRRG<br>VGS = 10V<br>0 0.01 LTT aaaill<br>0 2 4 6 8 10 12 14 16 18 20 22 0.1 1 10 100<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>DS(ON) V<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> PowerDI is a registered trademark of Diodes Incorporated. DMC3016LNS Document number: DS38129 Rev. 2 - 2 5 of 10 **www.diodes.com** July 2016 © Diodes Incorporated **DMC3016LNS** [dd ## **Typical Characteristics - P-CHANNEL** **==> picture [508 x 639] intentionally omitted <==** **----- Start of picture text -----**<br> 30.0 30<br>VGS = -10.0V VDS = -5.0V -55 ℃<br>25.0 25 25 ℃<br>VGS = -4.5V<br>20.0 e ae 20 OO<br>VGS = -4.0V<br>15.0 aaa VGS = -3.0V 15 ee) Ae<br>,/ A en oe<br>10.0 10<br>lf er ae<br>VGS = -2.5V<br>5.0 5 125 ℃<br>150 ℃<br>VGS = -2.0V 85 ℃<br>Y e Of<br>0.0 | A 0 G-<br>0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 13. Typical Output Characteristic Figure 14. Typical Transfer Characteristic<br>40.00 100<br>90<br>35.00<br>80 ToC eee<br>70 Tee EE<br>30.00 VGS = -4.5V<br>60 ce<br>25.00 50 Te<br>40 a<br>20.00 VGS = -10.0V 30 ee ID = -7A<br>20 PMSEELCTITIT<br>15.00<br>10 es<br>10.00 ssHice 0 ee EEE EEE<br>0 5 10 15 20 25 30 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 15. Typical On-Resistance vs. Drain Current and Figure 16. Typical Transfer Characteristic<br>Gate Voltage<br>0.04 2<br>0.035 VGS = -10V 1.8<br>150 ℃<br>0.03 ee 1.6 eeeP| | tt ft fd<br>125 ℃<br>0.025 | 85 ℃ 1.4 Pett<br>0.02 po 25 ℃ 1.2 | EE<br>VGS = -10V, ID = -10A<br>0.015 pt tT tT | 1 P| ee | | |p e e<br>-55 ℃<br>0.01 0.8<br>0.005 PEEEE S) 0.6 pe VGS = -4.5V, ID = -5A e<br>0 | | tf fl fl 0.4 BEER<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 17. Typical On-Resistance vs. Drain Current and Figure 18. On-Resistance Variation with Temperature<br>Temperature<br>, DRAIN CURRENT (A)ID , DRAIN CURRENT (A)ID<br>(mΩ) (mΩ)<br>, DRAIN-SOURCE ON-RESISTANCE , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>(Ω)<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>**----- End of picture text -----**<br> PowerDI is a registered trademark of Diodes Incorporated. DMC3016LNS Document number: DS38129 Rev. 2 - 2 6 of 10 **www.diodes.com** July 2016 © Diodes Incorporated **DMC3016LNS** **==> picture [234 x 203] intentionally omitted <==** **----- Start of picture text -----**<br> 0.05<br>0.04<br>VGS = -4.5V, ID = -5AGS = -4.5V, ID = -5A= -4.5V, ID = -5AD = -5A= -5A<br>Litt fete<br>0.03 Pp pee d<br>0.02 a>OoOo an<br>VGS = -10V, ID = -10AGS = -10V, ID = -10A= -10V, ID = -10AD = -10A= -10A<br>0.01 TL<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (J, JUNCTION TEMPERATURE (, JUNCTION TEMPERATURE ( ℃ )<br>Figure 19. On-Resistance Variation with Temperature<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> **==> picture [492 x 663] intentionally omitted <==** **----- Start of picture text -----**<br> 0.05 2.5<br>0.04 2<br>VGS = -4.5V, ID = -5AGS = -4.5V, ID = -5A= -4.5V, ID = -5AD = -5A= -5A<br>Litt fete PTE ti Li<br>ID = -1mA<br>0.03 Pp pee d 1.5 S R R<br>0.02 a>OoOo an 1 Po ID = -250μA a e<br>VGS = -10V, ID = -10AGS = -10V, ID = -10A= -10V, ID = -10AD = -10A= -10A<br>0.01 TL 0.5 [. cn<br>0 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (J, JUNCTION TEMPERATURE (, JUNCTION TEMPERATURE ( ℃ ) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 19. On-Resistance Variation with Temperature Figure 20. Gate Threshold Variation vs. Junction<br>Temperature<br>30 10000<br>VGS = 0V f = 1MHz<br>25 ee e in —————<br>Ciss<br>20 eee ie 1000 4 Ee ee es<br>===<br>15 ee | INa eses<br>Coss<br>10 fi TA = 150 [o] C 100<br>TA = 125 [o] C f/, —_—S——— Crss<br>TA = 85 [o] C<br>5<br>TA = 25 [o] C<br>TA = -55 [o] C<br>0 ZI) 10 es<br>0 0.3 0.6 0.9 1.2 0 5 10 15 20 25 30<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 21. Diode Forward Voltage vs. Current Figure 22. Typical Junction Capacitance<br>10 100<br>RDS(ON) Limited PW =100µs<br>8 ee NN<br>10<br>6<br>1 PW =1ms<br>4 PW =10ms<br>PW =100ms<br>VDS = -15V, ID = -7A 0.1 PW =1s<br>2 TJ(Max) = 150 ℃ TC = 25 ℃<br>Single Pulse PW<br>DUT on 1*MRP Board DC<br>VGS = -10V ail ALL<br>0 0.01<br>0 2 4 6 8 10 12 14 16 18 20 22 0.1 1 10 100<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 23. Gate Charge Figure 24. SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>DS(ON)<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> PowerDI is a registered trademark of Diodes Incorporated. 7 of 10 **www.diodes.com** DMC3016LNS Document number: DS38129 Rev. 2 - 2 July 2016 © Diodes Incorporated **DMC3016LNS** **==> picture [407 x 239] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>SEeE———ee<br>S D=0.7 SS<br>EL D=0.5 Rear REeS<br>ee<br>| D=0.3 | neoolll EE<br>D=0.9<br>0.1 P E EEE cual LLIN EET<br>Bee D=0.1 eef e<br>a ee ee /7 ee ee ee<br>||<br>ag D=0.05 WT Ly||| AAm iii | Tiittiit 6 TUE EP TT TTT<br>| PPT<br>e y i a aa | ||<br>0.01 D=0.02 | LG<br>E D=0.01 A<br>erA<br>D=0.005<br>a Se TT RθJA(t) = r(t) * RθJA manill<br>Ly [yw] RθJA = 97 ℃ /W<br>D=Single Pulse Duty Cycle, D = t1 / t2<br>0.001<br>1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 25. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> PowerDI is a registered trademark of Diodes Incorporated. DMC3016LNS Document number: DS38129 Rev. 2 - 2 8 of 10 **www.diodes.com** July 2016 © Diodes Incorporated **DMC3016LNS** ## **Package Outline Dimensions** Please see http://www.diodes.com/package-outlines.html for the latest version. ## **POWERDI[®] 3333-8 (Type UXB)** **==> picture [371 x 239] intentionally omitted <==** **----- Start of picture text -----**<br> D A<br>D1 A1<br>POWERDI [®] 3333-8<br>(Type UXB)<br>Dim Min Max Typ<br>E1 E A 0.75 0.85 0.80<br>A1 0.00 0.05 --<br>b 0.25 0.40 0.32<br>c 0.10 0.25 0.15<br>ot D 3.20 3.40 3.30<br>: c D1 2.95 3.15 3.05<br>D2 0.10 0.35 0.23<br>E 3.20 3.40 3.30<br>L<br>E1 2.95 3.15 3.05<br>E2 0.10 0.30 0.20<br>D2 e 0.65<br>L 0.35 0.55 0.45<br>a 0° 12° 10°<br>E2 All Dimensions in mm<br>L<br>aa S===<br>b<br>app e<br>a<br>**----- End of picture text -----**<br> ## **Suggested Pad Layout** Please see http://www.diodes.com/package-outlines.html for the latest version. **POWERDI[®] 3333-8 (Type UXB)** **==> picture [331 x 146] intentionally omitted <==** **----- Start of picture text -----**<br> X1<br>no d Dimensions Value (in mm)<br>C 0.650<br>Y<br>X 0.420<br>X1 2.370<br>Y1<br>Y 0.730<br>et Y1 3.500<br>Y<br>‘nod C X<br>**----- End of picture text -----**<br> PowerDI is a registered trademark of Diodes Incorporated. DMC3016LNS Document number: DS38129 Rev. 2 - 2 9 of 10 **www.diodes.com** July 2016 © Diodes Incorporated **DMC3016LNS** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. ## **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: - A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated **www.diodes.com** PowerDI is a registered trademark of Diodes Incorporated. DMC3016LNS Document number: DS38129 Rev. 2 - 2 10 of 10 **www.diodes.com** July 2016 © Diodes Incorporated
Updated at June 9, 2026
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