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DMC3016LDV-13
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 21 A, 21 A, 0.012 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: PowerDI3333
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 900mW
- Power Dissipation P Channel: 900mW
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 21A
- Continuous Drain Current Id P Channel: 21A
- Drain Source On State Resistance N Channel: 0.012ohm
- Drain Source On State Resistance P Channel: 0.025ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.223 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## **DMC3016LDV COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET PowerDI** ## **Product Summary** |**Device**|**V(BR)DSS**|**RDS(ON) Max**|**ID Max**<br>**TC = +25°C**| |---|---|---|---| |Q1|30V|12mΩ @ VGS= 10V|21A| |||17mΩ @ VGS= 4.5V|18A| |Q2|-30V|25mΩ @ VGS= -10V|-15A| |||38mΩ @ VGS= -4.5V|-12A| ## **Features** - Low On-Resistance - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - Complementary Pair MOSFET - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** - **Halogen and Antimony Free. “Green” Device (Note 3)** ## **Description** This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. ## **Mechanical Data** - Case: PowerDI3333-8 (Type UXC) - Case Material: Molded Plastic, “Green” Molding Compound. - UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminal Connections Indicator: See Diagram ## **Applications** - Terminals: Finish — Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 - Power Management Functions - Analog Switch - Weight: 0.072 grams (Approximate) **==> picture [444 x 158] intentionally omitted <==** **----- Start of picture text -----**<br> <br>PowerDI3333-8 (Type UXC) Equivalent Circuit<br>D1 D2<br>D1<br>D1<br>D2<br>D2<br>. [-™]<br>G1 S1 G1 G2<br>S2<br>G2<br>2S PIN1 © &<br>S1 S2<br>Top View Bottom View N-Channel MOSFET P-Channel MOSFET<br>**----- End of picture text -----**<br> |Top View|Bottom View|N-Channel MOSFET|N-Channel MOSFET|P-Channel MOSFET| |---|---|---|---|---| |**Information** (Note 4)||||| |||||| |**Part Number**||**Case**||**Packaging**| |DMC3016LDV-7|PowerDI3333-8(Type UXC)|||2,000/Tape & Reel| |DMC3016LDV-13|PowerDI3333-8(Type UXC)|||3,000/Tape & Reel| ## **Ordering Information** (Note 4) - Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. ## **Marking Information** **==> picture [23 x 52] intentionally omitted <==** **----- Start of picture text -----**<br> SD5 C60<br>YYWW<br>**----- End of picture text -----**<br> SD5 = Product Type Marking Code YYWW = Date Code Marking ~~7~~ YY = Last Digit of Year (ex: 16 for 2016) WW = Week Code (01 ~ 53) _PowerDI is a registered trademark of Diodes Incorporated._ 1 of 10 **www.diodes.com** DMC3016LDV Document number: DS38936 Rev. 1 - 2 July 2016 © Diodes Incorporated **DMC3016LDV** ## **Maximum Ratings Q1 – N-Channel** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratingsgss** **Q1 –** **N-Channel**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q1 –** **N-Channel**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q1 –** **N-Channel**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q1 –** **N-Channel**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q1 –** **N-Channel**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q1 –** **N-Channel**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---| ||||||| |**Characteristic**|||**Symbol**|**Value**|**Unit**| |Drain-Source Voltage|||VDSS|30|V| |Gate-Source Voltage|||VGSS|±20|V| |Continuous Drain Current, VGS= 10V (Note 7)|Steady<br>State|TC= +25°C<br>TC= +70°C|ID|21<br>17|A| |Maximum BodyDiode Forward Current(Note 6)|||IS|2|A| |Pulsed Drain Current(380μspulse,Dutycycle = 1%)|||IDM|70|A| |Avalanche Current(L = 0.1mH) (Note 8)|||IAS|22|A| |Avalanche Energy (L = 0.1mH) (Note 8)|||EAS|24|mJ| ## **Maximum Ratings Q2 – P-Channel** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratingsgss** **Q2 – P-Channel**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q2 – P-Channel**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q2 – P-Channel**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q2 – P-Channel**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q2 – P-Channel**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q2 – P-Channel**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---| ||||||| |**Characteristic**|||**Symbol**|**Value**|**Units**| |Drain-Source Voltage|||VDSS|-30|V| |Gate-Source Voltage|||VGSS|±20|V| |Continuous Drain Current, VGS= -10V (Note 7)|Steady<br>State|TC= +25°C<br>TC= +70°C|ID|-15<br>-12|A| |Maximum BodyDiode Forward Current(Note 6)|||IS|-2|A| |Pulsed Drain Current(380μs Pulse,DutyCycle = 1%)|||IDM|-40|A| |Avalanche Current(L = 0.1mH) (Note 8)|||IAS|-22|A| |Avalanche Energy (L = 0.1mH) (Note 8)|||EAS|24|mJ| ## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) |**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||| |---|---|---|---|---| |**Characteristic**||**Symbol**|**Value**|**Unit**| |Total Power Dissipation(Note 5)||PD|0.9|W| |Thermal Resistance, Junction to Ambient (Note 5)|SteadyState|RθJA|136|°C/W| ||t<10s||78|| |Total Power Dissipation(Note 6)||PD|1.8|W| |Thermal Resistance, Junction to Ambient (Note 6)|Steady State|RθJA|70|°C/W| ||t<10s||41|| |Thermal Resistance,Junction to Case(Note 7)||RθJC|15|| |Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C| - Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 2 of 10 **www.diodes.com** DMC3016LDV Document number: DS38936 Rev. 1 - 2 July 2016 © Diodes Incorporated **DMC3016LDV** ||**Electrical Characteristics** **Q1 –** **N-Channel**(@TA= +25°C, unless otherwise specified.)| |---|---| ||| ||**Characteristic**<br>**Symbol**<br>**Min**<br>**Typ **<br>**Max**<br>**Unit**<br>**Test Condition**<br>**OFF CHARACTERISTICS**(Note 9)<br>Drain-Source Breakdown Voltage<br>BVDSS<br>30<br>—<br>—<br>V<br>VGS= 0V,ID= 250μA<br>~~———————————————~~| ||Zero Gate Voltage Drain Current TJ= +25°C<br>IDSS<br>—<br>—<br>1<br>μA<br>VDS= 30V,VGS= 0V| ||Gate-Source Leakage<br>IGSS<br>—<br>—<br>±100<br>nA<br>VGS= ±20V,VDS= 0V<br>**ON CHARACTERISTICS**(Note 9)<br>Gate Threshold Voltage<br>VGS(TH)<br>1.4<br>—<br>2.0<br>V<br>VDS= VGS,ID= 250μA<br>Static Drain-Source On-Resistance<br>RDS(ON)<br>—<br>9.5<br>12<br>mΩ<br>VGS= 10V,ID= 7A<br>14<br>17<br>VGS= 4.5V,ID= 7A<br>Diode Forward Voltage<br>VSD<br>—<br>0.70<br>1.0<br>V<br>VGS= 0V,IS= 1A<br>**DYNAMIC CHARACTERISTICS**(Note 10)<br>Input Capacitance<br>CISS<br>—<br>1,184<br>—<br>pF<br>VDS= 15V, VGS= 0V,<br>f = 1.0MHz<br>Output Capacitance<br>COSS<br>—<br>137<br>—<br>Reverse Transfer Capacitance<br>CRSS<br>—<br>107<br>—<br>Gate Resistance<br>RG<br>—<br>3.0<br>—<br>Ω<br>VDS= 0V,VGS= 0V,f = 1.0MHz<br>Total Gate Charge(VGS= 4.5V)<br>QG<br>—<br>9.5<br>—<br>nC<br>VDS= 15V, ID= 12A<br>Total Gate Charge(VGS= 10V)<br>QG<br>—<br>21<br>—<br>Gate-Source Charge<br>QGS<br>—<br>3.8<br>—<br>Gate-Drain Charge<br>QGD<br>—<br>4.1<br>—<br>Turn-On DelayTime<br>tD(ON)<br>—<br>4.5<br>—<br>ns<br>VDD= 15V, VGS= 10V,<br>RL= 1.5Ω, RG= 3Ω<br>Turn-On Rise Time<br>tR<br>—<br>3.3<br>—<br>Turn-Off DelayTime<br>tD(OFF)<br>—<br>14<br>—<br>Turn-Off Fall Time<br>tF<br>—<br>3.6<br>—<br>~~=~~<br>~~ay ay a a~~<br>~~ye~~<br>~~ep~~<br>~~ee~~<br>~~GG~~<br>~~GO CO~~<br>~~pO~~<br>~~a~~<br>~~===~~<br>~~CO~~<br>~~pT~~| ||Reverse RecoveryTime<br>tRR<br>—<br>9.3<br>—<br>ns<br>IF= 12A, di/dt = 500A/μs<br>Reverse RecoveryCharge<br>QRR<br>—<br>2.5<br>—<br>nC<br>~~——_—_—~~| ||| |**Electrical Characteristics Q2 – P-Channel**(@TA= +25°C, unless otherwise specified.)|| ||| ||**Characteristic**<br>**Symbol**<br>**Min**<br>**Typ **<br>**Max**<br>**Unit**<br>**Test Condition**<br>**OFF CHARACTERISTICS**(Note 9) <br>Drain-Source Breakdown Voltage<br>BVDSS<br>-30<br>—<br>—<br>V<br>VGS= 0V,ID= -250μA<br>~~——~~| ||Zero Gate Voltage Drain Current TJ= +25°C<br>IDSS<br>—<br>—<br>-1<br>μA<br>VDS= -30V,VGS= 0V<br>Gate-Source Leakage<br>IGSS<br>—<br>—<br>±100<br>nA<br>VGS= ±20V,VDS= 0V<br>~~ee~~| ||**ON CHARACTERISTICS**(Note 9) <br>Gate Threshold Voltage<br>VGS(TH)<br>-1.2<br>—<br>-2.4<br>V<br>VDS= VGS,ID= -250μA<br>~~ee~~| ||Static Drain-Source On-Resistance<br>RDS (ON)<br>—<br>21<br>25<br>mΩ<br>VGS= -10V,ID= -7A<br>31<br>38<br>VGS= -4.5V,ID= -6.2A<br>Diode Forward Voltage<br>VSD<br>—<br>-0.7<br>-1.2<br>V<br>VGS= 0V,IS= -2.1A<br>**DYNAMIC CHARACTERISTICS**(Note 10)<br>Input Capacitance<br>CISS<br>—<br>1,188<br>—<br>pF<br>VDS= -15V, VGS= 0V,<br>f = 1MHz<br>Output Capacitance<br>COSS<br>—<br>154<br>—<br>Reverse Transfer Capacitance<br>CRSS<br>—<br>116<br>—<br>~~ee~~<br>~~So~~<br>~~7~~<br>O~~r~~<br>~~pO~~| ||Gate Resistance<br>RG<br>—<br>9<br>—<br>Ω<br>VDS= 0V,VGS= 0V,f = 1MHz| ||Total Gate Charge(VGS= -4.5V)<br>QG<br>—<br>9.5<br>—<br>nC<br>VDS= -15V, ID= -7A<br>Total Gate Charge(VGS= -10V)<br>QG<br>—<br>19.7<br>—<br>Gate-Source Charge<br>QGS<br>—<br>3.1<br>—<br>Gate-Drain Charge<br>QGD<br>—<br>3.2<br>—<br>~~esse~~| ||Turn-On DelayTime<br>tD(ON)<br>—<br>3.7<br>—<br>~~a~~| ||ns<br>VGS= -10V, VDS= -15V,<br>RG= 6Ω, ID= -7A<br>Turn-On Rise Time<br>tR<br>—<br>2.6<br>—<br>Turn-Off DelayTime<br>tD(OFF)<br>—<br>36<br>—<br>Turn-Off Fall Time<br>tF<br>—<br>22<br>—<br>Reverse RecoveryTime<br>tRR<br>—<br>10.4<br>—<br>ns<br>IF= -7A, di/dt = 100A/μs<br>Reverse RecoveryCharge<br>QRR<br>—<br>3.2<br>—<br>nC<br>Notes:<br>9. Short duration pulse test used to minimize self-heating effect.<br>10. Guaranteed by design. Not subject to product testing.<br>~~pO~~<br>~~———_— ee~~| ||DMC3016LDV<br>3 of 10<br>July 2016| ||Document number: DS38936 Rev. 1 - 2<br>**www.diodes.com**<br>© Diodes Incorporated| July 2016 © Diodes Incorporated **DMC3016LDV** **==> picture [479 x 667] intentionally omitted <==** **----- Start of picture text -----**<br> N-Channel<br>30 30<br>VGS = 10V<br>VGS = 4.5V VGS = 3.5V VDS = 5.0V<br>25 TE lll.) 25 yl<br>VGS = 4.0V<br>20 p= ae 20<br>15 15<br>VGS = 3.0V TA = 150°C<br>10 ro 10 TA = 125°C TA = 25°C<br>TA = 85°C TA = -55°C<br>5 [—T VGS = 2.5V 5 wf<br>0 poe 0<br>0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) V GS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristic Figure 2 Typical Transfer Characteristics<br>20 100<br>18 PF | | [ | fy 90 Pili | | | ty tt<br>16 80 ID = 20A<br>VGS = 4.5V<br>14 70<br>a ASE<br>12 60<br>10 50<br>FE SEE EEE<br>8 V GS = 10V 40<br>6 ae 30 SEE EEE<br>4 P| | | ff] 20 PUT<br>2 10<br>0 PERE 0 BEEtT | tt<br>0 5 10 15 20 25 30 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs. Figure 4 Typical Drain-Source On-Resistance<br>Drain Current and Gate Voltage vs. Gate-Source Voltage<br>0.02 2<br>VGS = 10V<br>TA = 150°C 1.8 Pi] tty ff<br>TA = 125°C<br>0.015 1.6 Pf;tttty i<br>TA = 85°C<br>1.4<br>SERRE<br>TA = 25°C<br>0.01 1.2<br>TA = -55°C VGS = 10V<br>1 saeeect I D = 10A<br>0.005<br>0.8<br>0.6 crn VGS = 4.5V<br>ID = 5A<br>0<br>0 5 10 15 20 25 30 0.4 BER EEE<br>Figure 5 Typical On-Resistance vs. I D, DRAIN CURRENT (A) -50 -25TJ, JUNCTION TEMPERATURE (0 25 50 75 100 C)125 150<br>Drain Current and Temperature Figure 6 On-Resistance Variation with Temperature<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>, DRAIN CURRENT (A)<br>D<br> I<br>, DRAIN CURRENT (A)<br> I<br>D<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>**----- End of picture text -----**<br> ## **Q1 – N-Channel** 4 of 10 **www.diodes.com** DMC3016LDV Document number: DS38936 Rev. 1 - 2 July 2016 © Diodes Incorporated **DMC3016LDV** **==> picture [503 x 667] intentionally omitted <==** **----- Start of picture text -----**<br> Q1 – N-Channel (Continued)<br>0.03 3<br>2.5<br>VGS = 4.5V<br>0.02 ID = 5A 2 a ID = 1mA<br>1.5 ID = 250µA<br>0.01 VIGSD = 10A = 10V 1 as, TSa<br>0.5<br>0 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Ambient Temperature<br>30 10000<br>f=1MHz<br>ee ee ==<br>25<br>Ciss<br>SEF<br>eee a<br>20 1000<br>15 ee TA = 150°C Hl] Seer= —}<br>TA = 125°C Coss<br>10 TA = 85°C TA = 25 ° C 100<br>Crss<br>TA = -55°C<br>5<br>0 ODS L 10 eeoT<br>0 0.3 0.6 0.9 1.2 0 5 10 15 20 25 30<br>V SD, SOURCE-DRAIN VOLTAGE (V) VDS , DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>10 100<br>RDS(on)<br>Limited<br>P W = 100µs<br>8 4 — HS NHB<br>10<br>6 DC<br>VDS = 15V 1 PW = 10s<br>4 ID = 12A PW = 1s<br>PW = 100ms<br>0.1 EHH T J(m ax) = 150°C P W = 10ms RS<br>2 TC = 25°C PW = 1ms<br>V GS = 10V<br>Single Pulse<br>DUT on 1 * MRP Board<br>0 JV. 0.01 Ssaiiaemaritiacantiaa |<br>0 2 4 6 8 10 12 14 16 18 20 22 0.01 0.1 1 10 100<br>Qg, TOTAL GATE CHARGE (nC) VDS , DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 Gate Charge Figure 12 SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>V<br>, JUNCTION CAPACITANCE (pF)<br>CT<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>D<br>, DRAIN CURRENT (A)<br>I<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br> 5 of 10 DMC3016LDV Document number: DS38936 Rev. 1 - 2 July 2016 © Diodes Incorporated **www.diodes.com** **DMC3016LDV** **==> picture [92 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> Q2 – P-Channel<br>**----- End of picture text -----**<br> **==> picture [480 x 647] intentionally omitted <==** **----- Start of picture text -----**<br> 30 30<br>VGS = -10V<br>VDS = -5.0V<br>2520 7fhe VGS = -4.0VV GS = -4.5V 2520 eeese<br>15 |) fae V GS = -3.0V 15 ee) ae<br>ae oe<br>10 10<br>jf | TA = 150C<br>5 faa VGS = -2.5V 5 TTAA = 85 C = 125 C | TAT = -55C fs A = 25 C <br>VGS = -2.0V<br>00 An 0.5 1 1.5 2 2.5 3 00 JZof 1 2 3 4 5<br>VDS, DRAIN -SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 13 Typical Output Characteristics Figure 14 Typical Transfer Characteristics<br>40 100 Ti}<br>90<br>35<br>VGS = -4.5V 80 Ti tt | tt fy<br>70 Tt | || | | |ft f t ttdfy<br>30 ID = -7A<br>60 tof<br>25 50 AAT | | ft ft td<br>VGS = -10V<br>40 FUE FT| [|| tT ft t dytd<br>20<br>30 PX;| > tp tt<br>20 Pp.|<br>15<br>10<br>100 5 10 15 20 25 30 0 2 P| 4 | 6 8 | 10 | 12 te 14 tt 16 18 fd 20<br>ID, DRAIN SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 15 Typical On-Resistance vs. Figure 16 Typical Drain-Source On-Resistance<br>Drain Current and Gate Voltage vs. Gate-Source Voltage<br>0.04 2<br>VGS = -10V<br>0.035 a T ee A = 150 C TA = 125 C 1.8 TT LLL<br>0.03 1.6<br>TA = 85C<br>SS<br>0.025 TA = 25 C 1.4<br>0.02 i CLL eT<br>TA = -55 C 1.2<br>VGS = -10V<br>0.015<br>1 I D = -10A<br>0.01 tT 0.8 Cee<br>P| | ft | ft ee<br>0.005 tf | ft tf 0.6 VGS = -4.5V “PPT<br>ID = -5A<br>0<br>0 pt} 5 10 tt 15 | 20 25 30 0.4 SS EEEEE<br>I D, DRAIN SOURCE CURRENT (A) -50 -25 0 25 50 75 100 125 150<br>Figure 17 Typical On-Resistance vs. TJ, JUNCTION TEMPERATURE (C)<br>Drain Current and Temperature Figure 18 On-Resistance Variation with Temperature<br>DS(ON)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>ID<br>D<br>, DRAIN CURRENT (A)<br>I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>**----- End of picture text -----**<br> 6 of 10 **www.diodes.com** DMC3016LDV Document number: DS38936 Rev. 1 - 2 July 2016 © Diodes Incorporated **DMC3016LDV** **==> picture [503 x 667] intentionally omitted <==** **----- Start of picture text -----**<br> Q2 – P-Channel (Continued)<br>0.05 2.5<br>VGS = -10V<br>0.04 ID = -10A 2<br>tae BERR<br>0.03 1.5<br>-ID = 250µA<br>reer) VGS = -4.5V | A<br>0.02 ooTL I D = -5A 1 fitaseitt -I SS D = 1mA<br>0.01 0.5<br>rs<br>0 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>T , JUNCTION TEMPERATURE (J C) TA, AMBIENT TEMPERATURE (°C)<br>Figure 19 On-Resistance Variation with Temperature Figure 20 Gate Threshold Variation vs. Ambient Temperature<br>30 10000<br>f=1MHz<br>25 ee iin So<br>C iss<br>=<br>20 ee [ie] 1000 e s es|<br>| e<br>tH eee<br>15 IN<br>TA = 150°C C oss<br>10 T A = 125°C / 100 SSaeeS<br>TA = 85°C TA = 25°C Crss<br>5<br>TA = -55°C<br>0 a Z Z hy aee 10 aiee<br>0 0.3 0.6 0.9 1.2 0 5 10 15 20 25 30<br>VSD, SOURCE-DRAIN VOLTAGE (V) V DS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 21 Diode Forward Voltage vs. Current Figure 22 Typical Junction Capacitance<br>10 100<br>R DS(on)<br>8 VA Ht Limited HERONS PW = 100µs HHH<br>10<br>6 DC<br>1 PW = 10s<br>4 VDS = -15V P W = 1s<br>ID = -7A PW = 100ms<br>0. 1 T J(m ax) = 150°C eae PW = 10ms<br>AVL So<br>2 TC = 25°C PW = 1ms<br>VGS = -10V<br>Single Pulse<br>DUT on 1 * MRP Board<br>0 JAE dL 0.01 Ts WE | LUTE FI<br>0 2 4 6 8 10 12 14 16 18 20 22 0.01 0.1 1 10 100<br>Qg, TOTAL GATE CHARGE (nC) V DS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 23 Gate Charge Figure 24 SOA, Safe Operation Area<br>GS(TH)<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(on)<br>R<br>, DRAIN CURRENT (A)<br>ID<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, SOURCE CURRENT (A)<br>IS<br>GS<br> GATE THRESHOLD VOLTAGE (V)<br>V<br>**----- End of picture text -----**<br> 7 of 10 **www.diodes.com** DMC3016LDV Document number: DS38936 Rev. 1 - 2 July 2016 © Diodes Incorporated **DMC3016LDV** **==> picture [109 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> LOLS.<br>**----- End of picture text -----**<br> **==> picture [430 x 229] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>D = 0.9<br>Se Se<br>D = 0.7<br>Beengee ee<br>bt D = 0.5 To eT<br>LE D = 0.3 EeEE PT | erinaI ETE PTT<br>PUI|<br>0.1 EA ee LI ELI ETI ETT<br>PB e D = 0.1 sa OO OS ae cdEe OOA Ey<br>az a)e<br>ro D = 0.05<br>oo<br>eA<br>D = 0.02<br>0.01 A D = 0.01 aeeeYY LEAT TLE ETETI EETET LETT<br>AFe ee| ee|eo<br>a D = 0.005 WE ee aaTT R JA (t) = r(t) * R JA CHCon<br>R JA = 136°C/W<br>D = Single Pulse Duty Cycle, D = t1/ t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 25 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> 8 of 10 **www.diodes.com** DMC3016LDV Document number: DS38936 Rev. 1 - 2 July 2016 © Diodes Incorporated **DMC3016LDV** ## **Package Outline Dimensions** Please see http://www.diodes.com/package-outlines.html for the latest version. **==> picture [399 x 274] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||| |---|---|---|---|---|---|---| |PowerDI3333-8 (Type UXC)| |D|A| |D1|A1| |PowerDI3333-8| |E1|E|(Type UXC)| |Dim|Min|Max|Typ| |A|0.75|0.85|0.80| |A1|0.00|0.05|--| |b|0.25|0.40|0.32| |c|0.10|0.25|0.15| |l|c|g|D|3.20|3.40|3.30| |D1|2.95|3.15|3.05| |D2|0.90|1.30|1.10| |L| |E|3.20|3.40|3.30| |E1|2.95|3.15|3.05| |E3|E2|1.60|2.00|1.80| |E4| |E2|E3|0.95|1.35|1.15| |E4|0.10|0.30|0.20| |e|||0.65| |D2|k1|L|0.30|0.50|0.40| |k|k|0.50|0.90|0.70| |k1|0.13|0.53|0.33| |L|a|0°|12°|10°| |i| |All Dimensions in mm| |b|e| **----- End of picture text -----**<br> ## **Suggested Pad Layout** Please see http://www.diodes.com/package-outlines.html for the latest version. **PowerDI3333-8 (Type UXC)** **==> picture [165 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> X3<br>X2<br>Y2<br>X1<br>Y1<br>i ous<br>Y3<br>G1 G<br>Y<br>C X<br>**----- End of picture text -----**<br> **==> picture [107 x 114] intentionally omitted <==** **----- Start of picture text -----**<br> Dimensions Value (in mm)<br>C 0.650<br>G 0.230<br>G1 0.600<br>X 0.420<br>X1 1.200<br>X2 2.370<br>X3 2.630<br>Y 0.600<br>Y1 1.900<br>Y2 2.400<br>Y3 3.600<br>**----- End of picture text -----**<br> 9 of 10 **www.diodes.com** DMC3016LDV Document number: DS38936 Rev. 1 - 2 July 2016 © Diodes Incorporated **DMC3016LDV** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated **www.diodes.com** 10 of 10 **www.diodes.com** DMC3016LDV Document number: DS38936 Rev. 1 - 2 July 2016 © Diodes Incorporated
Updated at June 9, 2026
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