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DMC2990UDJ-7
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 450 mA, 450 mA, 0.6 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: AEC-Q101
- Transistor Case Style: SOT-963
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 350mW
- Power Dissipation P Channel: 350mW
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 450mA
- Continuous Drain Current Id P Channel: 450mA
- Drain Source On State Resistance N Channel: 0.6ohm
- Drain Source On State Resistance P Channel: 0.6ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.088 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**DMC2990UDJ** **COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET** ## **Product Summary** |**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**| |---|---|---|---| |**Device**<br>**V(BR)DSS**<br>**RDS(ON) max**<br>**ID max**<br>**TA = +25°C**<br>Q1<br>20V<br>0.99Ω@VGS= 4.5V<br>450mA<br>1.2Ω@VGS= 2.5V<br>400mA<br>1.8Ω@VGS= 1.8V<br>330mA<br>2.4Ω@VGS= 1.5V<br>300mA<br>Q2<br>-20V<br>1.9Ω@VGS= -4.5V<br>-310mA<br>2.4Ω@VGS= -2.5V<br>-280mA<br>3.4Ω@VGS= -1.8V<br>-240mA<br>5Ω@VGS= -1.5V<br>-180mA|||| |**Device**|**V(BR)DSS**|**RDS(ON) max**|**ID max**<br>**TA = +25°C**| |Q1|20V|0.99Ω@VGS= 4.5V|450mA| |||1.2Ω@VGS= 2.5V|400mA| |||1.8Ω@VGS= 1.8V|330mA| |||2.4Ω@VGS= 1.5V|300mA| |Q2|-20V|1.9Ω@VGS= -4.5V|-310mA| |||2.4Ω@VGS= -2.5V|-280mA| |||3.4Ω@VGS= -1.8V|-240mA| |||5Ω@VGS= -1.5V|-180mA| ## **Features and Benefits** - Low On-Resistance - Very low Gate Threshold Voltage, 1.0V max - Low Input Capacitance - Fast Switching Speed - Ultra-Small Surface Mount Package 1mm x 1mm - Low Package Profile, 0.45mm Maximum Package height - ESD Protected Gate - **Totally Lead-Free & Fully RoHS compliant (Note 1 & 2)** - **Halogen and Antimony Free. “Green” Device (Note 3 & 4)** - **Qualified to AEC-Q101 standards for High Reliability** ## **Mechanical Data** ## **Description** This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. - Case: SOT963 - Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminal Connections Indicator: See diagram ## **Applications** - General Purpose Interfacing Switch - Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 **e3** - Weight: 0.027 grams (approximate) - Power Management Functions - Analog Switch **==> picture [69 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> ESD PROTECTED<br>**----- End of picture text -----**<br> **==> picture [37 x 108] intentionally omitted <==** **----- Start of picture text -----**<br> SOT963<br>Top View<br>**----- End of picture text -----**<br> **==> picture [81 x 132] intentionally omitted <==** **----- Start of picture text -----**<br> D1 G2 S2<br>Ltt<br>S1 G1 D2<br>FUL<br>Top View<br>Schematic and<br>Transistor Diagram<br>**----- End of picture text -----**<br> ## **Ordering Information** (Note 5 & 6) |**Ordering Informationg Information Information** (Note 5 & 6)Note 5 & 6))|**Ordering Informationg Information Information** (Note 5 & 6)Note 5 & 6))|**Ordering Informationg Information Information** (Note 5 & 6)Note 5 & 6))| |---|---|---| |||| |**Part Number**|**Case**|**Packaging**| |DMC2990UDJ-7|SOT963|10K/Tape & Reel| |DMC2990UDJ-7B|SOT963|10K/Tape&Reel| - Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 5. The options -7 and -7B stand for different taping orientations. Please refer to Diodes website at http://www.diodes.com for further details. 6. For packaging details, go to our website at http”//www.diodes.com/products/packages.html ## **Marking Information** **==> picture [14 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> D1<br>**----- End of picture text -----**<br> D1 = Product Type Marking Code 1 of 9 **www.diodes.com** DMC2990UDJ Document number: DS35481 Rev. 9 - 2 March 2013 © Diodes Incorporated **DMC2990UDJ** ## **Maximum Ratings Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratingsgss** **Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---| ||||||| |**Characteristic**|||**Symbol**|**Value**|**Units**| |Drain-Source Voltage|||VDSS|20|V| |Gate-Source Voltage|||VGSS|±8|V| |Continuous Drain Current (Note 7) VGS= 4.5V|Steady<br>State|TA= +25°C<br>TA= +70C|ID|450<br>350|mA| ||t<5s|TA= +25C<br>TA= +70C|ID|520<br>410|mA| |Continuous Drain Current (Note 7) VGS= 1.8V|Steady<br>State|TA= +25C<br>TA= +70C|ID|330<br>260|mA| ||t<5s|TA= +25C<br>TA= +70C|ID|390<br>310|mA| |Maximum Continuous BodyDiode Forward Current(Note 7)|||IS|440|mA| |Pulsed Drain Current(Note 8)|||IDM|800|mA| ## **Maximum Ratings Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratingsgss** **Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---| ||||||| |**Characteristic**|||**Symbol**|**Value**|**Units**| |Drain-Source Voltage|||VDSS|-20|V| |Gate-Source Voltage|||VGSS|±8|V| |Continuous Drain Current (Note 5) VGS= -4.5V|Steady<br>State|TA= +25C<br>TA= +70C|ID|-310<br>-240|mA| ||t<5s|TA= +25C<br>TA= +70C|ID|-360<br>-280|mA| |Continuous Drain Current (Note 5) VGS= -1.8V|Steady<br>State|TA= +25C<br>TA= +70C|ID|-240<br>-190|mA| ||t<5s|TA= +25C<br>TA= +70C|ID|-280<br>-220|mA| |Maximum Continuous BodyDiode Forward Current(Note 7)|||IS|-440|mA| |Pulsed Drain Current(Note 8)|||IDM|-800|mA| ## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) |**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||| |---|---|---|---|---| |**Characteristic**||**Symbol**|**Value**|**Units**| |Total Power Dissipation(Note 7)||PD|350|mW| |Thermal Resistance, Junction to Ambient (Note 7)|Steady State|RθJA|360|°C/W| ||t<5s||270|°C/W| |Operating and Storage Temperature Range||TJ, TSTG|-55 to +150|°C| - Notes: 7. Device mounted on FR-4 PCB, with minimum recommended pad layout. 8. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%. 2 of 9 **www.diodes.com** DMC2990UDJ Document number: DS35481 Rev. 9 - 2 March 2013 © Diodes Incorporated **DMC2990UDJ** **Electrical Characteristics Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.) **==> picture [524 x 326] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---| |Pee|Characteristic|ee|Symbol|Min|fd|Typ|Max|Unit|Test Condition| |Ce|OFF CHARACTERISTICS (Note 9)| |nO|Drain-Source Breakdown Voltage|BVDSS|20|-|GO|-|GO|V|GO|VGS = 0V, ID = 250μA| |Zero Gate Voltage Drain Current @TC = +25°C|IDSS|-|-|100|nA|VDS = 16V, VGS = 0V| |ERee|-|ee|-|eee|50|PF|VDS = 5V, VGS = 0V| |GD|Gate-Source Leakage|IGSS|-|-|(O(n|±100|nA|VGS = ±5V, VDS = 0V| |Cee|ON CHARACTERISTICS (Note 9)| |GD|Gate Threshold Voltage|VGS(th)|0.4|-|1.0|V|VDS = VGS, ID = 250μA| |ee|-|0.60|0.99|(|VGS = 4.5V, ID = 100mA| |ee|-|ee|0.75|1.2|ee|PF|VGS = 2.5V, ID = 50mA| |Static Drain-Source On-Resistance|RDS(ON)|ee|-|0.90|ee|1.8|eee|Ω|Pe|VGS = 1.8V, ID = 20mA| |ee|-|ee|1.2|2.4|ee|Pe|VGS = 1.5V, ID = 10mA| |ee|-|eee|2.0|eee|-|Pe|VGS = 1.2V, ID = 1mA| |GO|Forward Transfer Admittance||Yfs||180|DO|850|I|-|(|mS|(|VDS = 5V, ID = 125mA| |GO|Diode Forward Voltage|VSD|-|0.6|GO|1.0|(O(n|V|VGS = 0V, IS = 10mA| |Cee|DYNAMIC CHARACTERISTICS (Note 10)| |GG|Input Capacitance|Ciss|-|27.6|-|pF| |VDS = 15V, VGS = 0V,| |a|Output Capacitance|Coss|-|I|4.0|-|pF|f = 1.0MHz| |GO|Reverse Transfer Capacitance|Crss|-|2.8|-|pF| |GD|Gate Resistance|RG|I|-|113|-|Ω|VDS = 0V, VGS = 0V, f = 1.0MHz| |eG|Total Gate Charge|Qg|-|0.5|-|nC|VGS = 4.5V, VDS = 10V,| |a|Gate-Source Charge|Qgs|-|0.07|-|nC|ID = 250mA| |GO|Gate-Drain Charge|Qgd|-|0.07|-|nC| |GO|Turn-On Delay Time|tD(on)|I|-|4.0|I|-|ns|VDD = 15V, VGS = 4.5V,| |GG|Turn-On Rise Time|tr|-|3.3|-|ns| |RL = 47Ω, RG = 2Ω,| |a|Turn-Off Delay Time|tD(off)|-|19.0|-|ns|ID = 200mA| |ee|Turn-Off Fall Time|GE|tf|GO|-|GO|6.4|-|ns| |Electrical Characteristics|Q2 P-CHANNEL|(@TA = +25°C, unless otherwise specified.)| **----- End of picture text -----**<br> **==> picture [524 x 318] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||||| |---|---|---|---|---|---|---|---|---|---|---| |DQ|Characteristic|Symbol|Min|Typ|(|Max|Unit|Test Condition| |Cee|OFF CHARACTERISTICS (Note 9)| |GO|Drain-Source Breakdown Voltage|BVDSS|-20|I|-|-|V|VGS = 0V, ID = -250μA| |Zero Gate Voltage Drain Current @TC = +25°C|IDSS|-|-|100|nA|VDS = -16V, VGS = 0V| |efee|-|ESee|-|50|ee|PO|VDS = -5V, VGS = 0V| |GO|Gate-Source Leakage|IGSS|-|NS|-|±100|nA|VGS = ±5V, VDS = 0V| |Ce|ON CHARACTERISTICS (Note 9)| |(OG|Gate Threshold Voltage|VGS(th)|-0.4|-|-1.0|V|VDS = VGS, ID = -250μA| |ee|-|1.2|1.9|(|VGS = -4.5V, ID = -100mA| |ee|-|ee|1.5|2.4|ee|Pe|VGS = -2.5V, ID = -50mA| |Static Drain-Source On-Resistance|RDS(ON)|ee|-|eee|2.1|eee|3.4|Ω|Po|VGS = -1.8V, ID = -20mA| |ee|-|ee|2.5|eee|5|Pe|VGS = -1.5V, ID = -10mA| |ee|-|eeee|4.0|eeeee|-|P|V|Fp|GS = -1.2V, ID = -1mA| |GD|Forward Transfer Admittance||Yfs||100|I|450|-|mS|VDS = -5V, ID = -125mA| |GD|Diode Forward Voltage|VSD|-|-0.6|(O(n|-1.0|V|VGS = 0V, IS = -10mA| |Cee|DYNAMIC CHARACTERISTICS (Note 10)| |GO|Input Capacitance|Ciss|-|28.7|-|pF| |VDS = -15V, VGS = 0V,| |GG|Output Capacitance|Coss|-|4.2|-|pF|f = 1.0MHz| |a|Reverse Transfer Capacitance|Crss|-|2.9|-|pF| |GO|Gate Resistance|RG|-|399|-|Ω|VDS = 0V, VGS = 0V, f = 1.0MHz| |a|Total Gate Charge|Qg|GO|-|GO|0.4|-|(O(n|nC|VGS = -4.5V, VDS =- 10V,| |GG|Gate-Source Charge|Qgs|-|0.08|-|nC|ID = -250mA| |a|Gate-Drain Charge|Qgd|-|0.06|-|nC| |GO|Turn-On Delay Time|tD(on)|-|5.8|-|ns| |GO|Turn-On Rise Time|tr|I|-|5.7|-|ns|VDD = -15V, VGS = -4.5V,| |GG|Turn-Off Delay Time|tD(off)|-|31.1|-|ns|RG = 2Ω, ID = -200mA| |nD|Turn-Off Fall Time|GD|tf|PO|-|SD|16.4|-|ns| |Notes:|9. Short duration pulse test used to minimize self-heating effect.| |10. Guaranteed by design. Not subject to product testing.| **----- End of picture text -----**<br> 3 of 9 **www.diodes.com** DMC2990UDJ Document number: DS35481 Rev. 9 - 2 March 2013 © Diodes Incorporated **DMC2990UDJ** ## **Q1 N-CHANNEL** **==> picture [494 x 647] intentionally omitted <==** **----- Start of picture text -----**<br> 0.8 0.8<br>VGS = 4.5V<br>VGS =4.0V TA = -55°C<br>VGS = 3.0V TA = 25°C TA = 85°C<br>0.6 0.6<br>VGS = 2.5V<br>VGS = 2.0V TA = 125°C<br>TA = 150°C<br>0.4 0.4<br>VGS = 1.5V<br>f |<br>0.2 0.2<br>VGS = 1.2V VDS = 5.0V<br>0 a| 0 TAIT Dinan<br>0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics<br>1.2 1.2<br>1.0 1.0 V GS = 4.5V<br>VGS = 1.8V TA = 150°C<br>0.8 0.8<br>TA = 125°C<br>0.6 —— VGS = 2.5V 0.6 a TA = 85°C<br>0.4 VGS = 4.5V 0.4 TA = 25°C<br>TA = -55°C<br>0.2 0.2<br>GREER 0 44-<br>0 0.2 0.4 0.6 0.8 0 0.2 0.4 0.6 0.8 1.0<br>ID, DRAIN-SOURCE CURRENT ID DRAIN CURRENT (A)<br>Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage Fig. 4 Typical On-Resistance vs. Drain Current and Temperature<br>1.6 1.2<br>ID = 300mA 1.0<br>Toy =o<br>1.4<br>0.8 ID = 150mA<br>1.2<br>ror} ID = 150mA = 0.6 ee<br>1.0 ID = 300mA<br>0.4<br>Z|<br>0.8 0.2<br>0.6 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>PCC) TJ, JUNCTION TEMPERATURE(C) = Gece TJ, JUNCTION TEMPERATURE(C)<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)ID , DRAIN CURRENT(A)ID<br>)<br> )<br>, DRAIN-SOURCE ON-RESISTANCE ( <br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R DS(ON)<br>R<br>)<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (Normalized) , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> 4 of 9 **www.diodes.com** DMC2990UDJ Document number: DS35481 Rev. 9 - 2 March 2013 © Diodes Incorporated **DMC2990UDJ** **==> picture [481 x 651] intentionally omitted <==** **----- Start of picture text -----**<br> 1.2 1.0<br>1.0<br>0.8<br>Hn ID = 1mA =f<br>0.8<br>0.6 T A = 25°C<br>st] |= ECC<br>0.6 ID = 250µA<br>of PRN y p<br>0.4<br>0.4 tity tr<br>0.2<br>0.2<br>0 0<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2<br>TJ, JUNCTION TEMPERATURE(C) VSD, SOURCE- DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diodes Forward Voltage vs. Current<br>50 1,000<br>f = 1MHz<br>40 | oor<br>| EBBEEESE TA = 150°C<br>100<br>30 Ki Ee<br>| ======>—<br>| Ciss | |) |= EEE T A = 125°C<br>20<br>[= 10 SS T A = 85°C<br>10 T A = 25°C<br>Coss<br>a<br>ee Caan<br>0 a Crss 1<br>0 5 10 15 20 2 4 6 8 10 12 14 16 18 20<br>VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Typical Junction Capacitance Fig. 10 Typical Drain-Source Leakage Current vs. Voltage<br>8 1<br>RDS(on)<br>Limited<br>DC<br>6 / INST PW = 10s NCO PW = 100µs<br>0.1 P SAL W = 1s<br>PW = 100ms<br>PW = 10µs<br>4 PW = 10ms<br>7 PTT TTT IWAH<br>PW = 1ms<br>0.01 EE A<br>2 UY aa ean Cott<br>VDS = 10V TTJ(MAX)A = 25°C = 150°C<br>Single Pulse<br>0 Za 0.001 mani Ht ttt<br>0 0.2 0.4 0.6 0.8 1 0.1 1 10 100<br>QG - (nC) VDS, DRAIN-SOURCE VOLTAGE<br>Fig. 11 Gate Charge Characteristics Fig. 12 SOA, Safe Operation Area<br>, SOURCE CURRENT (A)<br>, GATE THRESHOLD VOLTAGE (V) IS<br>GS(TH)<br>V<br>, LEAKAGE CURRENT (nA)<br>CT, JUNCTION CAPACITANCE (pF) IDSS<br>, DRAIN CURRENT (A)<br>ID<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br> 5 of 9 **www.diodes.com** DMC2990UDJ Document number: DS35481 Rev. 9 - 2 March 2013 © Diodes Incorporated **DMC2990UDJ** ## **Q2 P-CHANNEL** **==> picture [481 x 658] intentionally omitted <==** **----- Start of picture text -----**<br> 0.8 0.8<br>VDS = -5.0V TA= 85°C TA= 150°C<br>TA= 25°C<br>0.6 0.6<br>TA= 125°C<br>TA= -55°C<br>0.4 0.4<br>ES of-<br>0.2 0.2<br>| a fe<br>0 [p= 0 J LLL<br>0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 13 Typical Output Characteristics Fig. 14 Typical Transfer Characteristics<br>3.2 2.0<br>VGS = -4.5V T A = 150°C<br>PLL<br>2.8<br>TA= 125°C<br>VGS = -1.8V 1.6<br>2.4<br>2.0 SPE 1.2 ———— TA= 85°C<br>1.6 a2? an oe TA= 25°C<br>0.8<br>1.2<br>VGS = -4.5V T A = -55°C<br>0.8<br>sasnene 0.4 =—rr<br>0.4<br>0 “CECE 0 oo<br>0 0.2 0.4 0.6 0.8 0 0.2 0.4 0.6 0.8<br>-ID, DRAIN-SOURCE CURRENT -ID DRAIN CURRENT (A)<br>Fig. 15 Typical On-Resistance vs. Fig. 16 Typical On-Resistance vs.<br>Drain Current and Gate Voltage Drain Current and Temperature<br>1.7 2.4<br>VGS = -2.5V,<br>1.5 I D = -150mA 2.0 V GS = -2.5V,<br>ID = -150mA<br>1.3 TA 1.6 BEARDED<br>BERSEE> nee ae<br>VGS = -4.5V,<br>1.1 I D = -300mA 1.2<br>VGS = -4.5V,<br>ID = -300mA<br>0.9 0.8<br>0.7 MICELLE) }§=©= 0.4 SPE<br>0.5 0<br>-50 PCEEPE -25 0 25 50 75 Le 100 125 150 -50 -25 0 25 50 75 100 125 150<br><br>Fig. 17 On-Resistance Variation with TemperatureT , JUNCTION TEMPERATURE(J C) T , JUNCTION TEMPERATURE(J C)<br>Fig. 18 On-Resistance Variation with Temperature<br>, DRAIN CURRENT(A)<br>, DRAIN CURRENT (A)D -ID<br>-I<br>) )<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (Normalized)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> 6 of 9 **www.diodes.com** DMC2990UDJ Document number: DS35481 Rev. 9 - 2 March 2013 © Diodes Incorporated **DMC2990UDJ** **==> picture [478 x 659] intentionally omitted <==** **----- Start of picture text -----**<br> 1.2 0.8<br>1.0<br>0.6<br>0.8<br>CeCe a<br>ID = -1mA TA= 25°C<br>0.6 SS 0.4 |<br>SS ID = -250µA ee,<br>0.4<br>0.2<br>0.20 ERE 0 7<br>-50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2<br>TJ, JUNCTION TEMPERATURE(C) VSD, SOURCE- DRAIN VOLTAGE (V)<br>Fig. 19 Gate Threshold Variation vs. Ambient Temperature Fig. 20 Diodes Forward Voltage vs. Current<br>50 f = 1MHz 1,000<br>ee — T A = 150°C<br>40 ETE [=] —————Seeeneenee<br>TA= 125°C<br>Ciss 100<br>30 _™—— ———————<br>| | | hldT ee<br>20 a ee FOE TA= 85°C<br>10<br>a [TTT<br>10 Ne I] |] T A = -25°C<br>Coss<br>ee SAREE====aE===e<br>0 Crss 1<br>0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 18 20<br>VDS, DRAIN-SOURCE VOLTAGE (V) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 21 Typical Junction Capacitance Fig. 22 Typical Leakage Current vs.<br>Drain-Source Voltage<br>5 10<br>P W = 100µs<br>4 re P W = 1ms Ue<br>1 R DS(ON)<br>Limited<br>3 PW = 10µs<br>PW = DC<br>VDS = 10V, ID = -4.5A 0.1 ESS PW = 10s ON amin<br>2 PW = 1s<br>Pty TTT P W = 100ms PW = 10ms PN BEER<br>0.01 eer<br>1<br>TJ(MAX) = 150C<br>TA = 25C<br>Single Pulse<br>0 0.001 a a eeaaaine<br>0 2 4 6 8 10 12 14 16 18 0.1 1 10 100<br>QG, TOTAL GATE CHARGE (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 23 Gate Charge Characteristics Fig. 24 SOA, Safe Operation Area<br>, SOURCE CURRENT (A)<br>, GATE THRESHOLD VOLTAGE (V)GS(TH) IS<br>-V<br>, LEAKAGE CURRENT (nA)<br>, JUNCTION CAPACITANCE (pF) DSS<br>T -I<br>C<br>, DRAIN CURRENT (A)<br>, GATE SOURCE VOLTAGE (V) ID<br>GS<br>-V<br>**----- End of picture text -----**<br> 7 of 9 **www.diodes.com** DMC2990UDJ Document number: DS35481 Rev. 9 - 2 March 2013 © Diodes Incorporated **DMC2990UDJ** **==> picture [400 x 209] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>D = 0.7<br>D = 0.5<br>Frcere tTHCETET<br>D = 0.3<br>Seen D = 0.9 O ON<br>0.1 ea<br>D = 0.1<br>. FEE HH age72a ereenEe<br>es D = 0.05 |<br>D = 0.02<br>Se oma 7<br>0.01 D = 0.01<br>D = 0.005<br>RJA (t) = r(t)*RJA<br>SMa RJA = 356C/W<br>D = Single Pulse Duty Cycle, D = t1/t2<br>0.001 PAULL -TETIAIE ETE ETAT LT |<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (sec)<br>Fig. 25 Transient Thermal Resistance<br>R(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> ## **Package Outline Dimensions** **==> picture [298 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>e1<br>SOT963<br>L<br>Dim Min Max Typ<br>A 0.40 0.50 0.45<br>A1 0 0.05 -<br>E1 E<br>c 0.120 0.180 0.150<br>D 0.95 1.05 1.00<br>E 0.95 1.05 1.00<br>rT| Le CU E1 0.75 0.85 0.80<br>e—_ e > | | b (6 places) e D p c it L 0.05 0.15 0.10<br>b 0.10 0.20 0.15<br>e 0.35 Typ<br>e1 0.70 Typ<br>A All Dimensions in mm<br>A1<br>[ool<br>**----- End of picture text -----**<br> ## **Suggested Pad Layout** **==> picture [263 x 114] intentionally omitted <==** **----- Start of picture text -----**<br> C C<br>—<br>Dimensions Value (in mm)<br>C 0.350<br>X 0.200<br>i S<br>Y1 Y 0.200<br>Y1 1.100<br>Y (6X)<br>Mc|| Ge<br>X (6X)<br>**----- End of picture text -----**<br> 8 of 9 **www.diodes.com** DMC2990UDJ Document number: DS35481 Rev. 9 - 2 March 2013 © Diodes Incorporated **DMC2990UDJ** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2013, Diodes Incorporated **www.diodes.com** 9 of 9 **www.diodes.com** DMC2990UDJ Document number: DS35481 Rev. 9 - 2 March 2013 © Diodes Incorporated
Updated at June 9, 2026
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