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DMC2700UDMQ-7
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 1.34 A, 1.34 A, 0.4 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: AEC-Q101
- Transistor Case Style: SOT-26
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.12W
- Power Dissipation P Channel: 1.12W
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 1.34A
- Continuous Drain Current Id P Channel: 1.34A
- Drain Source On State Resistance N Channel: 0.4ohm
- Drain Source On State Resistance P Channel: 0.7ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.096 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**DMC2700UDMQ** Lead-free Green ; **20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET**
## **Product Summary**
|**Device**<br>**BVDSS**<br>**RDS(ON)**max<br>**ID **max<br>TA= +25C<br>(Note 6)<br>Q1<br>20V<br>0.4Ω @ VGS= 4.5V<br>1.34A<br>0.5Ω @ VGS= 2.5V<br>1.65A<br>Q2<br>-20V<br>0.7Ω @ VGS= -4.5V<br>-1.14A<br>0.9Ω @ VGS= -2.5V<br>-0.94A|**Device**<br>**BVDSS**<br>**RDS(ON)**max<br>**ID **max<br>TA= +25C<br>(Note 6)<br>Q1<br>20V<br>0.4Ω @ VGS= 4.5V<br>1.34A<br>0.5Ω @ VGS= 2.5V<br>1.65A<br>Q2<br>-20V<br>0.7Ω @ VGS= -4.5V<br>-1.14A<br>0.9Ω @ VGS= -2.5V<br>-0.94A|**Device**<br>**BVDSS**<br>**RDS(ON)**max<br>**ID **max<br>TA= +25C<br>(Note 6)<br>Q1<br>20V<br>0.4Ω @ VGS= 4.5V<br>1.34A<br>0.5Ω @ VGS= 2.5V<br>1.65A<br>Q2<br>-20V<br>0.7Ω @ VGS= -4.5V<br>-1.14A<br>0.9Ω @ VGS= -2.5V<br>-0.94A|**Device**<br>**BVDSS**<br>**RDS(ON)**max<br>**ID **max<br>TA= +25C<br>(Note 6)<br>Q1<br>20V<br>0.4Ω @ VGS= 4.5V<br>1.34A<br>0.5Ω @ VGS= 2.5V<br>1.65A<br>Q2<br>-20V<br>0.7Ω @ VGS= -4.5V<br>-1.14A<br>0.9Ω @ VGS= -2.5V<br>-0.94A|
|---|---|---|---|
|**Device**|**BVDSS**|**RDS(ON)**max|**ID **max<br>TA= +25C<br>(Note 6)|
|Q1|20V|0.4Ω @ VGS= 4.5V|1.34A|
|||0.5Ω @ VGS= 2.5V|1.65A|
|Q2|-20V|0.7Ω @ VGS= -4.5V|-1.14A|
|||0.9Ω @ VGS= -2.5V|-0.94A|
## **Features and Benefits**
- Low On-Resistance
- Low Gate Threshold Voltage VGS(TH) < 1V
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Complementary Pair MOSFET
- Ultra-Small Surface Mount Package
- **ESD Protected**
- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)**
- **Halogen and Antimony Free. “Green” Device (Note 3)**
- **Qualified to AEC-Q101 Standards for High Reliability** **PPAP Capable (Note 4)**
## **Description and Applications**
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Portable Electronics
## **Mechanical Data**
- Case: SOT26
- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 O **e3**
- Terminals Connections: See Diagram Below
- Weight: 0.015 grams (Approximate)
-
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SOT26<br>(EB) ay)<br>ESD protected Gate<br>* . »<br>Top View<br>**----- End of picture text -----**<br>
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D1 S1 D2<br>D2<br>G2<br>Gate Brofection $2 G1 S2 G2<br>Device Symbol Top View<br>Pin-Out<br>**----- End of picture text -----**<br>
## **Ordering Information** (Note 5)
|**Ordering Informationg Information Information** (Note 5)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMC2700UDMQ-7|SOT26|3000/Tape &Reel|
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
## **Marking Information**
|||||||**C27**|**C27**|**C27**|||**YM**|**YM**|||C27 = Product Type Marking Code<br>YM = Date Code Marking<br>Y = Year (ex: E = 2017)<br>M = Month (ex: 9 = September)|C27 = Product Type Marking Code<br>YM = Date Code Marking<br>Y = Year (ex: E = 2017)<br>M = Month (ex: 9 = September)|C27 = Product Type Marking Code<br>YM = Date Code Marking<br>Y = Year (ex: E = 2017)<br>M = Month (ex: 9 = September)|C27 = Product Type Marking Code<br>YM = Date Code Marking<br>Y = Year (ex: E = 2017)<br>M = Month (ex: 9 = September)||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Date Code Key||||||||||||||||||||||||||
|**Year**|**2017**|||||**2018**|||||||**2019**||**2020**||**2021**||||**2022**|||**2023**||
|**Code**|E|||||F||||||||G|H||I||||J||||K|
|||||||||||||||||||||||||||
|**Month**|**Jan**||**Feb**|||**Mar**|||**Apr**|||||**May**|**Jun**<br>**Jul**||**Aug**||**Sep**||**Oct**||**Nov**||**Dec**|
|**Code**|1||2|||3||||4|4|||5|6<br>7||8||9||O||N||D|
Date Code Key
1 of 9 **www.diodes.com**
DMC2700UDMQ Datasheet Number: DS39494 Rev. 1 - 2
March 2017 © Diodes Incorporated
**DMC2700UDMQ**
## **Maximum Ratings N-CHANNEL – Q1** (@TA = +25°C, unless otherwise specified.)
|**Maximum Ratings N-CHANNEL – Q1gs N-CHANNEL – Q1s N-CHANNEL – Q11** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings N-CHANNEL – Q1gs N-CHANNEL – Q1s N-CHANNEL – Q11** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain Source Voltage||VDSS|20|V|
|Gate-Source Voltage||VGSS|±6|V|
|Drain Current (Note 6)|TA= +25°C<br>TA= +85°C|= +25°C<br>= +85°C<br>ID|1.34<br>0.97|A|
## **Maximum Ratings P-CHANNEL – Q2** (@TA = +25°C, unless otherwise specified.)
|**Maximum Ratings P-CHANNEL – Q2gs P-CHANNEL – Q2s P-CHANNEL – Q22 **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings P-CHANNEL – Q2gs P-CHANNEL – Q2s P-CHANNEL – Q22 **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain Source Voltage||VDSS|-20|V|
|Gate-Source Voltage||VGSS|±6|V|
|Drain Current (Note 6)|TA= +25°C<br>TA= +85°C|= +25°C<br>= +85°C<br>ID|-1.14<br>-1.07|A|
## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)
|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation(Note 6)|PD|1.12|W|
|Thermal Resistance,Junction to Ambient(Note 6)|RJA|111|C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|C|
Note: 6. For a device mounted on 25mm x 25mm FR-4 PCB board with a high coverage of single sided 1oz copper, in still air conditions with two active die.
2 of 9 **www.diodes.com**
DMC2700UDMQ Datasheet Number: DS39494 Rev. 1 - 2
March 2017 © Diodes Incorporated
**DMC2700UDMQ**
## **Electrical Characteristics N-CHANNEL – Q1** (@TA = +25°C, unless otherwise specified.)
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|---|---|---|---|---|---|---|
|**OFF CHARACTERISTICS(Note 7)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|20|||V|VGS= 0V,ID= 250µA|
|Zero Gate Voltage Drain Current|IDSS|||1|µA|VDS= 20V,VGS= 0V|
|Gate-Source Leakage|IGSS|||±10|µA|VGS= ±4.5V,VDS= 0V|
|**ON CHARACTERISTICS(Note 7)**<br>~~ee~~|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(TH)<br>~~ee~~|0.5<br>~~ee~~|<br>~~ee~~|1.0<br>~~ee~~|V<br>~~ee~~|VDS= VGS,ID= 250µA<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~a~~|RDS(ON)|<br><br>|0.3<br>0.4<br>0.5|0.4<br>0.5<br>0.7|Ω|VGS= 4.5V, ID= 600mA<br>VGS= 2.5V, ID= 500mA<br>VGS= 1.8V,ID= 350mA|
|Forward Transfer Admittance<br>~~a~~||Yfs|||1.4<br>~~QQ~~|<br>~~QQ~~|S<br>~~QQ~~|VDS= 10V,ID= 400mA|
|Diode Forward Voltage(Note 7)<br>~~eG~~|VSD<br>~~eG~~|<br>~~eG~~|0.7<br>~~eG~~<br>~~QQ~~|1.2<br>~~eG~~<br>~~QQ~~|V<br>~~eG~~<br>~~QQ~~|VGS= 0V,IS= 150mA<br>~~eG~~|
|**DYNAMIC CHARACTERISTICS**<br>~~QQ~~<br>~~———————~~<br>~~en~~<br>~~ne~~|||||||
|Input Capacitance<br>~~———————~~|Ciss|<br>~~en~~|60.67<br>~~en~~|<br>~~en~~|pF<br>~~en~~|VDS= 16V, VGS= 0V<br>f = 1.0MHz<br>~~ne~~|
|Output Capacitance<br>~~———————~~|Coss|<br>~~en~~|9.68<br>~~en~~|<br>~~en~~|pF<br>~~en~~||
|Reverse Transfer Capacitance<br>~~———————~~|Crss|<br>~~en~~|5.37<br>~~en~~|<br>~~en~~|pF<br>~~en~~||
|Total Gate Charge<br>~~———————~~<br>~~ee~~|Qg<br>~~ee~~|<br>~~en~~<br>~~ee~~|736.6<br>~~en~~<br>~~ee~~|<br>~~en~~<br>~~ee~~|pC<br>~~en~~<br>~~ee~~<br>~~ee~~|VGS= 4.5V, VDS= 10V,<br>ID= 250mA<br>~~ne~~<br>~~ee~~<br>~~ee~~|
|Gate-Source Charge<br>~~ee~~|Qgs<br>~~ee~~|<br>~~ee~~|93.6<br>~~ee~~|<br>~~ee~~|||
|Gate-Drain Charge<br>~~ee~~<br>~~———~~|Qgd<br>~~ee~~|<br>~~ee~~|116.6<br>~~ee~~|<br>~~ee~~<br>~~ee~~|||
|Turn-On DelayTime<br>~~———~~|tD(ON)||5.1|<br>~~ee~~|ns<br>~~ee~~|VDD= 10V, VGS= 4.5V,<br>RL= 47ΩRG= 10Ω<br>ID= 200mA<br>~~ee~~|
|Turn-On Rise Time<br>~~———~~|tR||7.4|<br>~~ee~~|||
|Turn-Off DelayTime<br>~~———~~|tD(OFF)||26.7|<br>~~ee~~|||
|Turn-Off Fall Time<br>~~———~~|tF||12.3|<br>~~ee~~|||
**Electrical Characteristics P-CHANNEL – Q2** (@TA = +25°C, unless otherwise specified.)
||||||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~|**Min**<br>~~ee~~|**Typ**<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|**Test Condition**<br>~~ee~~|
|**OFF CHARACTERISTICS(Note 7)**<br>~~ee~~<br>~~——~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~<br>~~——~~|BVDSS<br>~~ee~~|-20<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|V<br>~~ee~~|VGS= 0V,ID= -250µA<br>~~ee~~|
|Zero Gate Voltage Drain Current<br>~~——~~|IDSS|||-1|µA|VDS= -20V,VGS= 0V|
|Gate-Source Leakage<br>~~——~~|IGSS|||±10|µA|VGS= ±4.5V,VDS= 0V|
|**ON CHARACTERISTICS(Note 7)**<br>~~——~~<br>~~GO (QQ~~<br>~~a~~|||||||
|Gate Threshold Voltage<br>~~NG~~<br>~~a~~|VGS(TH)<br>~~NG~~|-0.5<br>~~NG~~|<br>~~NG~~<br>~~GO (QQ~~|-1.0<br>~~NG~~<br>~~(QQ~~|V<br>~~NG~~<br>~~(QQ~~|VDS= VGS,ID= -250µA<br>~~NG~~<br>~~(QQ~~|
|Static Drain-Source On-Resistance<br>~~a~~|RDS(ON)||0.5<br>0.7<br>1.0<br>~~GO (QQ~~|0.7<br>0.9<br>1.3<br>~~(QQ~~|Ω<br>~~(QQ~~|VGS= -4.5V, ID= -430mA<br>VGS= -2.5V, ID= -300mA<br>VGS= -1.8V,ID= -150mA<br>~~(QQ~~|
|Forward Transfer Admittance<br>~~a~~||Yfs|||-0.9<br>~~GO (QQ~~|<br>~~(QQ~~|S<br>~~(QQ~~|VDS= -10V,ID= -250mA<br>~~(QQ~~|
|Diode Forward Voltage(Note 7)<br>~~ff~~|VSD<br>~~ff~~|<br>~~ff~~|-0.8<br>~~ff~~|-1.2<br>~~ff~~|V<br>~~ff~~|VGS= 0V,IS= -150mA<br>~~ff~~|
|**DYNAMIC CHARACTERISTICS**<br>~~Re~~|||||||
|Input Capacitance<br>~~Re~~|Ciss<br>|<br>|59.76<br>|<br>|pF<br>|VDS= -16V, VGS= 0V<br>f = 1.0MHz<br>|
|Output Capacitance<br>~~Re~~|Coss<br>|<br>|12.07<br>|<br>|pF<br>||
|Reverse Transfer Capacitance<br>|Crss<br>|<br>|6.36<br>|<br>|pF<br>||
|Total Gate Charge<br>~~eG~~|Qg<br>~~eG~~|<br>~~eG~~|622.4<br>~~eG~~|<br>~~eG~~|pC<br>~~eG~~<br>~~ee~~|VGS= -4.5V, VDS= -10V,<br>ID= -250mA<br>~~eG~~<br>~~ee~~|
|Gate-Source Charge<br>~~eG~~|Qgs<br>~~eG~~|<br>~~eG~~|100.3<br>~~eG~~|<br>~~eG~~|||
|Gate-Drain Charge<br>~~eG~~<br>~~————~~|Qgd<br>~~eG~~|<br>~~eG~~|132.2<br>~~eG~~|<br>~~eG~~<br>~~ee~~|||
|Turn-On DelayTime<br>~~eG~~<br>~~————~~|tD(ON)<br>~~eG~~|<br>~~eG~~|5.1<br>~~eG~~|<br>~~eG~~<br>~~ee~~|ns<br>~~eG~~<br>~~ee~~|VDD= -10V, VGS= -4.5V,<br>RL= 47ΩRG= 10Ω<br>ID= -200mA<br>~~eG~~<br>~~ee~~|
|Turn-On Rise Time<br>~~————~~|tR||8.1|<br>~~ee~~|||
|Turn-Off DelayTime<br>~~————~~|tD(OFF)||28.4|<br>~~ee~~|||
|Turn-Off Fall Time<br>~~————~~|tF||20.7|<br>~~ee~~|||
3 of 9 **www.diodes.com**
DMC2700UDMQ Datasheet Number: DS39494 Rev. 1 - 2
March 2017 © Diodes Incorporated
**DMC2700UDMQ**
## **N-CHANNEL – Q1**
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**----- Start of picture text -----**<br>
1.0 1.0<br>0.8<br>0.8<br>| C ae ) fe<br>[A] (<br>T<br>N<br>E<br>0.6 R 0.6<br>R<br>U<br>R ec C<br>0.4 I [N] AR 0.4<br>D<br>h e<br>, D<br>I<br>T = 150°CA<br>0.2 0.2 T = 125°CA T = 85°CA<br>|A A ASnEE e c T = 25°CA e<br>0 i m 0 a T = -55°CA<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 2<br>VDS, DRAIN-SOURCE VOLTAGE (V) V , GATE-SOURCE VOLTAGE (V)GS<br>Fig.1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristic<br>0.8 ) 0.5<br>0.7<br>0.4 T = 150°CA<br>0.6 T = 125°CA<br>0.5 [RESISTANCE(] N [-] 0.3 T = 85°CA<br>O<br>0.4 VGS = 1.8V T = 25°CA<br>U [RCE]<br>0.3 V GS = 2.5V [SO] 0.2 T = -55°CA<br>VGS = 4.5V<br>0.2<br>D [RAIN-]<br>0.1<br>0.1 ,<br>( [ON)]<br>D [S]<br>0 R 0<br>0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0<br>ID, DRAIN-SOURCE CURRENT (A) I , DRAIN CURRENT (A)D<br>Fig. 3 Typical On-Resistance Fig. 4 Typical On-Resistance<br>vs. Drain Current and Gate Voltage vs. Drain Current and Temperature<br>1.7 CTCL 0.8<br>1.5<br>0.6<br>1.3<br>Saanneed HL<br>VGS = 2.5V<br>1.1 0.4 I D = 250mA<br>S000 VGS = 4.5V one<br>0.9 I D = 500mA<br>VGS = 4.5V<br>0.2 ID = 500mA<br>VGS = 2.5V<br>0.7 I D = 250mA<br>0.5 Acree 0 PPP EEL<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE ( °C 癈 ) TA, AMBIENT TEMPERATURE ( 癈 °C) )<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT(A)<br>ID , DRAIN CURRENT (A)<br>ID<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DSON<br>)<br>, DRAIN-SOURCE<br>DSON ON-RESISTANCE (<br>R<br>**----- End of picture text -----**<br>
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DMC2700UDMQ Datasheet Number: DS39494 Rev. 1 - 2
March 2017 © Diodes Incorporated
**DMC2700UDMQ**
## **N-CHANNEL – Q1** (Cont.)
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1.6 1.0<br>) [V] (<br>E<br>G<br>0.8<br>T [A] L 1.2 )<br>OV T = 25°CA<br>N [T(A]<br>D<br>L<br>0.6<br>H [O]<br>S 0.8 I = 1mAD C [URRE]<br>T [HRE] 0.4<br>I = 250µAD O [URCE]<br>S<br>[ATE] G<br>, 0.4 I [,] S 0.2<br>( [TH)] S<br>G<br>V<br>0 0<br>-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2<br>T , AMBIENT TEMPERATURE (°C)A V , SOURCE-DRAIN VOLTAGE (V)SD<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>100 1,000<br>T = 150°CA<br>C iss ) [nA] (T<br>N<br>ER 100 T = 125°CA<br>R<br>U<br>C<br>10 Ne Coss G [E] — — —<br>a ee A —<br>K<br>—— Crss AL [E] 10 ee ee ee T = 85°CA<br>, S<br>S<br>D<br>I<br>——— — T = 25°CA<br>1 1<br>| | [| TT ot<br>0 5 10 15 20 0 4 8 12 16 20<br>VDS, DRAIN-SOURCE VOLTAGE (V) V , DRAIN-SOURCE VOLTAGE (V) DS<br>Fig. 9 Typical Total Capacitance Fig. 10 Typical Leakage Current vs. Drain-Source Voltage<br>C, CAPACITANCE (pF)<br>, SOURCE CURRENT (A)<br>I<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, LEAKAGE CURRENT (nA)<br>IDSS<br>**----- End of picture text -----**<br>
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DMC2700UDMQ Datasheet Number: DS39494 Rev. 1 - 2
March 2017 © Diodes Incorporated
**DMC2700UDMQ**
## **P-CHANNEL – Q2**
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1.0 1.0<br>V = -5VDS<br>0.8 {o— 0.8 =<br>[A)] (T<br>[N] E<br>0.6 RR 0.6<br>U<br>C<br>5 ce fo<br>[IN] A<br>0.4 | ae R 0.4 / | |<br>D<br>, D<br>ff - [I] f<br>0.2 0.2 T = 150°CA<br>T = 125°CA T = 85°CA<br>pet AR T = 25°CA<br>0 Pity] |] | te yy 0 > A T = -55°CA e<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1.0 1.5 2.0 2.5 3.0<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -V , GATE-SOURCE VOLTAGE (V)GS<br>Fig.11 Typical Output Characteristics Fig. 12 Typical Transfer Characteristic<br>1.6 ) 1.0<br>(<br>1.4 V = -4.5VGS<br>N [CE]<br>T [A] 0.8<br>1.2 VGS = -1.8V I [S] S T = 150°CA<br>1.0 [RE] N [-] 0.6 T = 125°CA<br>O T = 85°CA<br>0.8<br>U [RCE] T = 25°CA<br>VGS = -2.5V O 0.4<br>0.6<br>[S] T = -55°CA<br>I [N-]<br>0.4 V GS = -4.5V D [RA]<br>0.2<br>0.2 , )<br>( [ON] S<br>D<br>0 R 0<br>0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0<br>-ID, DRAIN-SOURCE CURRENT (A) -I , DRAIN CURRENT (A)D<br>Fig. 13 Typical On-Resistance Fig. 14 Typical On-Resistance<br>vs. Drain Current and Gate Voltage vs. Drain Current and Temperature<br>1.7 1.0<br>1.5<br>0.8<br>tEtt TTT} 6 {fq er<br>VGS = -2.5V<br>1.3 ID = -250mA<br>Pe 0.6 TE<br>1.1<br>tt VGS = -4.5V eet 0.4 oP VGS = -4.5V ann<br>0.9 ID = -500mA ID = -500mA<br>0.7 PT VGS = -2.5V 0.2<br>ID = -250mA<br>0.5 aT 0 ia tt<br>-50 -25 0 25 PTT 50 75 100 TT} 125 150 = -50 LE -25 0 25 50 75 E 100 125 150<br>TA, AMBIENT TEMPERATURE ((°C) 癈 ) TA, AMBIENT TEMPERATURE ((°C) 癈 )<br>Fig. 15 On-Resistance Variation with Temperature Fig. 16 On-Resistance Variation with Temperature<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DSON<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DSON<br>R<br>, DRAIN CURRENT (A)<br>D<br>-I<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT(A)<br>D<br>-I<br>**----- End of picture text -----**<br>
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DMC2700UDMQ Datasheet Number: DS39494 Rev. 1 - 2
March 2017 © Diodes Incorporated
**DMC2700UDMQ**
## **P-CHANNEL – Q2** (Cont.)
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**----- Start of picture text -----**<br>
1.6 1.0<br>)<br>( [V]<br>G [E]<br>) 0.8<br>O [LTA] 1.2<br>V N [T(A] T = 25°CA<br>0.6<br>H [OLD]<br>S 0.8 I = -1mAD C [URRE]<br>T [HRE] 0.4<br>T [E] I = -250µAD O [URCE]<br>S<br>G [A]<br>, 0.4 - [I,] S 0.2<br>( [TH)]<br>G [S]<br>- [V]<br>0 0<br>-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2<br>T , AMBIENT TEMPERATURE (°C)A -V , SOURCE-DRAIN VOLTAGE (V)SD<br>Fig. 17 Gate Threshold Variation vs. Ambient Temperature Fig. 18 Diode Forward Voltage vs. Current<br>100 1,000<br>T = 150°CAA<br>C iss )<br>N [[T(nA]]<br>100 T = 125°CAA<br>10 Coss C [[URRE]]<br>SS G [[E]] =<br>A<br>Crss KA<br>—— L [[E]] 10 —— T = 85°CAA<br>,<br>— — ——<br>D [[SS]]<br>- [[I]]<br>ee — — T = 25°CAA<br>1 1<br>0 | 5 10 | | 15 20 0 (Ae 4 o 8 12 e 16<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -V , DRAIN-SOURCE VOLTAGE (V) DSDS<br>Fig. 19 Typical Total Capacitance Fig. 20 Typical Leakage Current<br>, SOURCE CURRENT (A)<br>S<br>, GATE THRESHOLD VOLTAGE (V) -I<br>GS(TH)<br>-V<br>, LEAKAGE CURRENT (nA)<br>DSS<br>-I<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
1,000<br>T = 150°CAA<br>)<br>N [[T(nA]]<br>100 T = 125°CAA<br>C [[URRE]]<br>G [[E]] =<br>A<br>AKA<br>L [[E]] 10 —— T = 85°CAA<br>,<br>— ——<br>D [[SS]]<br>- [[I]]<br>— — T = 25°CAA<br>1<br>0 (Ae 4 o 8 12 e 16 20<br>-V , DRAIN-SOURCE VOLTAGE (V) DSDS<br>Fig. 20 Typical Leakage Current<br>vs. Drain-Source Voltage<br>, LEAKAGE CURRENT (nA)<br>DSS<br>-I<br>**----- End of picture text -----**<br>
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DMC2700UDMQ Datasheet Number: DS39494 Rev. 1 - 2
March 2017 © Diodes Incorporated
**DMC2700UDMQ**
## **Package Outline Dimensions**
Please see http://www.diodes.com/package-outlines.html for the latest version.
## **SOT26**
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**----- Start of picture text -----**<br>
D<br>SOT26<br>Dim Min Max Typ<br>A1 0.013 0.10 0.05<br>A2 1.00 1.30 1.10<br>A3 0.70 0.80 0.75<br>- | ———<br>E1 | E = b 0.35 0.50 0.38<br>c 0.10 0.20 0.15<br>D 2.90 3.10 3.00<br>e - - 0.95<br>Lo a e1 - - 1.90<br>E 2.70 3.00 2.80<br>b<br>UU i a1 i = E1 1.50 1.70 1.60<br>L 0.35 0.55 0.40<br>e1<br>a - - 8°<br>a1 - - 7°<br>All Dimensions in mm<br>ta) ! pn<br>A2<br>A1<br>A3<br>Seating Plane a<br>L<br>fit, e JA c ,<br>**----- End of picture text -----**<br>
## **Suggested Pad Layout**
Please see http://www.diodes.com/package-outlines.html for the latest version.
**SOT26**
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**----- Start of picture text -----**<br>
o o o C1 |<br>Y1 G C<br>1<br>Y<br>AE X<br>**----- End of picture text -----**<br>
|**Dimensions Value**|**Dimensions Value(in mm)**|
|---|---|
|**C**|2.40|
|**C1**|0.95|
|**G**|1.60|
|**X**|0.55|
|**Y**|0.80|
|**Y1**|3.20|
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DMC2700UDMQ Datasheet Number: DS39494 Rev. 1 - 2
March 2017 © Diodes Incorporated
**DMC2700UDMQ**
## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
## **LIFE SUPPORT**
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
- A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
**www.diodes.com**
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DMC2700UDMQ Datasheet Number: DS39494 Rev. 1 - 2
March 2017 © Diodes Incorporated
Updated at June 9, 2026
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