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DMC25D1UVT-7
Dual MOSFET, Complementary N and P Channel, 25 V, 25 V, 500 mA, 500 mA, 4 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: TSOT-26
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.3W
- Power Dissipation P Channel: 1.3W
- Drain Source Voltage Vds N Channel: 25V
- Drain Source Voltage Vds P Channel: 25V
- Continuous Drain Current Id N Channel: 500mA
- Continuous Drain Current Id P Channel: 500mA
- Drain Source On State Resistance N Channel: 4ohm
- Drain Source On State Resistance P Channel: 0.055ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.126 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
| ## **DMC25D1UVT** eo CT **COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET** ## **Product Summary** |**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**| |---|---|---|---| ||||| |**Device**|**V(BR)DSS**|**RDS(ON)**|**ID **<br>**TA = +25°C**| |Q1|25V|4Ω @ VGS= 4.5V|0.5A| |Q2|-12V|55mΩ @ VGS= -4.5V|-3.9A| |||70mΩ @ VGS= -2.5V|-3.5A| ## **Description** This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ## **Applications** - DC-DC Converters - Power Management Functions - Load Switch ## **Features and Benefits** - Low On-Resistance - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - ESD Protected Gate - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** - **Halogen and Antimony Free. “Green” Device (Note 3)** - **Qualified to AEC-Q101 Standards for High Reliability** ## **Mechanical Data** - Case: TSOT26 - Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminal Connections: See Diagram - Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e3** - Weight: 0.013 grams (Approximate) **==> picture [218 x 123] intentionally omitted <==** **----- Start of picture text -----**<br> Q2<br>TSOT26 Vin, R1 4 3 Vout, C1<br>ON/OFF 5 2 Vout, C1<br>Q1<br>R1, C1 6 1 R2<br>Top View<br>Top View<br>Internal circuit<br>**----- End of picture text -----**<br> **==> picture [230 x 127] intentionally omitted <==** **----- Start of picture text -----**<br> D1 D2<br>G1 G2<br>Gate Protection Diode S1 Gate Protection Diode S2<br>Q1 N-Channel MOSFET Q2 P-Channel MOSFET<br>**----- End of picture text -----**<br> ## **Ordering Information** (Note 4) |**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)| |---|---|---| |||| |**Part Number**|**Case**|**Packaging **| |DMC25D1UVT-7|TSOT26|3000 / Tape & Reel| |DMC25D1UVT-13|TSOT26|10000 /Tape &Reel| - Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. ## **Marking Information** **G2 G1 S2 D1** C6D = Product Type Marking Code YM or YM = Date Code Marking **C6DC5D** Y or Y = Year (ex: C = 2015) M = Month (ex: 9 = September) **S1 D2 D2** Date Code Key **Year 2015 2016 2017 2018 2019 2020 2021** ~~So~~ **Code** C D E F G H I **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code** 1 2 3 4 5 6 7 8 9 O N D ~~ee~~ 1 of 9 **www.diodes.com** DMC25D1UVT Document number: DS37507 Rev. 2 - 2 April 2015 © Diodes Incorporated **DMC25D1UVT** ## **Maximum Ratings – Q1** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratings – Q1gs – Q1s – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings – Q1gs – Q1s – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings – Q1gs – Q1s – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings – Q1gs – Q1s – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---| ||||| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Drain-Source Voltage|VDSS|25|V| |Gate-Source Voltage|VGSS|-0.5<br>+8|V| |Continuous Drain Current(Note 5)VGS= 4.5V|ID|0.5|A| |Maximum Continuous BodyDiode Forward Current(Note 6)|IS|1.2|A| |Pulsed Drain Current(Note 6)|IDM|1.5|A| ## **Maximum Ratings – Q2** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratings – Q2gs – Q2s – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings – Q2gs – Q2s – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings – Q2gs – Q2s – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings – Q2gs – Q2s – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings – Q2gs – Q2s – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---| |||||| |**Characteristic**||**Symbol**|**Value**|**Unit**| |Drain-Source Voltage||VDSS|-12|V| |Gate-Source Voltage||VGSS|±8|V| |Continuous Drain Current (Note 5) VGS= -4.5V|Steady State|ID|-3.9|A| ||Note 9||-17.4|A| |Continuous Drain Current(Note 5)VGS= -2.5V|||-2.82|A| |Maximum Continuous BodyDiode Forward Current(Note 6)||IS|-40|A| |Pulsed Drain Current(Note 6)||IDM|-40|A| ## **Thermal Characteristics** |**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**| |---|---|---|---|---| |||||| |**Characteristic**||**Symbol**|**Value**|**Unit**| |Power Dissipation(Note 5)||PD|1.3|W| |Thermal Resistance, Junction to Ambient (Note 5)|Steady State|RθJA|100|°C/W| ||Note 9||5|| |Thermal Resistance,Junction to Case (Note 5)||RθJC|36|°C/W| |Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C| ## **Electrical Characteristics – Q1** (@TA = +25°C, unless otherwise specified.) |**Electrical Characteristics – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---|---| |||||||| |**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**| |**OFF CHARACTERISTICS(Note 7) **||||||| |Drain-Source Breakdown Voltage|BVDSS|25|—|—|V|VGS= 0V,ID= 250µA| |Zero Gate Voltage Drain Current|IDSS|—|—|1|µA|VDS= 20V,VGS= 0V| |Gate-Source Leakage|IGSS|—|—|100|nA|VGS= 8V,VDS= 0V| |**ON CHARACTERISTICS(Note 7) **||||||| |Gate Threshold Voltage|VGS(TH)|0.65|0.85|1.5|V|VDS= VGS,ID= 250μA| |Static Drain-Source On-Resistance|RDS(ON)|—|3.8|4|Ω|VGS= 4.5V,ID= 0.4A| |Diode Forward Voltage|VSD|—|0.76|1.2|V|VGS= 0V,IS= 0.29A| |**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~ee~~<br>~~———~~||||||| |Input Capacitance<br>~~es~~<br>~~———~~|Ciss<br>~~es~~|—<br>~~es~~|27.6<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|pF<br>~~es~~<br>~~ee~~|VDS= 10V, VGS= 0V,<br>f = 1.0MHz<br>~~es~~| |Output Capacitance<br>~~es~~<br>~~———~~|Coss<br>~~es~~|—<br>~~es~~|8.5<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~||| |Reverse Transfer Capacitance<br>~~es~~<br>~~———~~|Crss<br>~~es~~|—<br>~~es~~|3.3<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~||| |Gate Resistance<br>~~es~~<br>~~———~~<br>~~—————~~|Rg<br>~~es~~|—<br>~~es~~|25<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~<br>~~**ee**~~|Ω<br>~~es~~<br>~~ee~~<br>~~**ee**~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~es~~<br>~~**ee**~~| |Total Gate Charge(VGS= 4.5V)<br>~~———~~<br>~~—————~~|Qg|—|0.4<br>~~ee~~|—<br>~~ee~~<br>~~**ee**~~|nC<br>~~ee~~<br>~~**ee**~~|VDS= 5V, ID= 0.2A<br>~~**ee**~~| |Total Gate Charge(VGS= 10V)<br>~~———~~<br>~~—————~~|Qg|—|0.9<br>~~ee~~|—<br>~~ee~~<br>~~**ee**~~||| |Gate-Source Charge<br>~~———~~<br>~~—————~~|Qgs|—|0.1<br>~~ee~~|—<br>~~ee~~<br>~~**ee**~~||| |Gate-Drain Charge<br>~~———~~<br>~~—————~~|Qgd|—|0.04<br>~~ee~~|—<br>~~ee~~<br>~~**ee**~~||| |Turn-On DelayTime<br>~~———~~<br>~~—————~~|tD(ON)|—|2.5<br>~~ee~~|—<br>~~ee~~<br>~~**ee**~~|ns<br>~~ee~~<br>~~**ee**~~|VGS= 4.5V, VDS= 6V,<br>RG= 50Ω, ID= 0.5A<br>~~**ee**~~| |Turn-On Rise Time<br>~~———~~<br>~~—————~~|tR|—|1.4<br>~~ee~~|—<br>~~ee~~<br>~~**ee**~~||| |Turn-Off DelayTime<br>~~—————~~|tD(OFF)|—|5.7|—<br>~~**ee**~~||| |Turn-Off Fall Time<br>~~—————~~|tF|—|4.3|—<br>~~**ee**~~||| Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1in. square copper plate. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 9. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%. 2 of 9 **www.diodes.com** DMC25D1UVT Document number: DS37507 Rev. 2 - 2 April 2015 © Diodes Incorporated **DMC25D1UVT** ## **Electrical Characteristics – Q2** (@TA = +25°C, unless otherwise specified.) |**Electrical Characteristics – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---|---| |||||||| |**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**| |**OFF CHARACTERISTICS(Note 10) **||||||| |Drain-Source Breakdown Voltage|BVDSS|-12|—|—|V|VGS= 0V,ID= -250µA| |Zero Gate Voltage Drain Current|IDSS|—|—|-1|µA|VDS= -6.4V,VGS= 0V| |Gate-Source Leakage|IGSS|—|—|±10|µA|VGS= ±8V,VDS= 0V| |**ON CHARACTERISTICS(Note 10) **||||||| |Gate Threshold Voltage|VGS(TH)|-0.35|—|-1.5|V|VDS= VGS,ID= -250μA| |Static Drain-Source On-Resistance|RDS(ON)|—|—|55|mΩ|VGS= -4.5V,ID= -2.8A| |||—|—|70||VGS= -2.5V,ID= -2.5A| |||—|—|100||VGS= -1.8V,ID= -2.0A| |Diode Forward Voltage|VSD|—|—|-1.2|V|VGS= 0V,IS= -0.6A| |**DYNAMIC CHARACTERISTICS(Note 11)**<br>~~—_—eee~~||||||| |Input Capacitance<br>~~—_—~~|Ciss<br>|—<br>~~eee~~|9.7<br>~~eee~~|—<br>~~eee~~|pF<br>~~eee~~|VDS= -6V, VGS= 0V,<br>f = 1MHz<br>~~eee~~| |Output Capacitance<br>~~—_—~~|Coss<br>|—<br>~~eee~~|393<br>~~eee~~|—<br>~~eee~~||| |Reverse Transfer Capacitance<br>~~—_—~~|Crss<br>|—<br>~~eee~~|1.9<br>~~eee~~|—<br>~~eee~~||| |Gate Resistance<br>~~—_—~~|Rg<br>|—<br>~~eee~~|1846<br>~~eee~~|—<br>~~eee~~|Ω<br>~~eee~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~eee~~| |Total Gate Charge(VGS= -4.5V)<br>~~—_—~~|Qg<br>|—<br>~~eee~~|24.5<br>~~eee~~|—<br>~~eee~~|nC<br>~~eee~~|VDS= -6V, ID= -2.8A<br>~~eee~~| |Gate-Source Charge<br>~~—_— ~~|Qgs<br>|—<br> ~~eee~~|3.3<br>~~eee~~|—<br>~~eee~~||| |Gate-Drain Charge|Qgd|—|7.3|—||| |Turn-On DelayTime|tD(ON)|—|1.2|—|µs|VGS= -4.5V, VDS= -6V,<br>RG= 6Ω, ID= -2.8A| |Turn-On Rise Time|tR|—|2.7|—||| |Turn-Off DelayTime|tD(OFF)|—|9.8|—||| |Turn-Off Fall Time|tF|—|6.5|—||| Notes: 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to production testing. ## **Typical Characteristics - N-CHANNEL** **==> picture [503 x 215] intentionally omitted <==** **----- Start of picture text -----**<br> 1.5 1<br>VGS=4.5V VGS=2.5V VDS= 5V -55 ℃<br>25 ℃ 125 ℃<br>1.2 VGS=4.0V 0.8<br>85 ℃ 150 ℃<br>VGS=3.0V<br>0.9 VGS=3.5V VGS=2.0V 0.6<br>0.6 0.4<br>fo<br>VGS=1.5V<br>0.3 0.2<br>f i fe<br>VGS=1.2V<br>0.0 A 0<br>0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>, DRAIN CURRENT (A)<br>, DRAIN CURRENT (A) ID<br>ID<br>**----- End of picture text -----**<br> 3 of 9 **www.diodes.com** DMC25D1UVT Document number: DS37507 Rev. 2 - 2 April 2015 © Diodes Incorporated **DMC25D1UVT** **==> picture [235 x 676] intentionally omitted <==** **----- Start of picture text -----**<br> 1.5<br>1.2<br>0.9 VGS=4.5V<br>0.6<br>0.3<br>0<br>0 0.3 0.6 0.9 1.2 1.5<br>ID, DRAIN-SOURCE CURRENT (A)<br>Figure 3. Typical On-Resistance vs. Drain Current and<br>Gate Voltage<br>3<br>VGS= 4.5V<br>150 ℃<br>2.5<br>Ty<br>2<br>Py 125 ℃ 85 ℃<br>1.5<br>O OS<br>25 ℃<br>1<br>Z a<br>-55 ℃<br>0.5 = a<br>e e<br>0<br>0 0.3 0.6 0.9 1.2 1.5<br>ID, DRAIN CURRENT (A)<br>Figure 5. Typical On-Resistance vs. Drain Current<br>and Temperature<br>2<br>1.5 VGS=2.5V, ID=200mA<br>1<br>VGS=4.5V, ID=400mA<br>0.5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Temperature<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>(Ω)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> **==> picture [240 x 685] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>4<br>ity ty<br>3 ity<br>2 ity<br>ID=400mA<br>1<br>t e<br>0 - | Perr<br>1 2 3 4 5 6 7 8<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 4. Typical Transfer Characteristic<br>1.8<br>1.6 VGS=4.5V, ID=400mA<br>1.4 F ay<br>1.2<br>VGS=2.5V, ID=200mA<br>1<br>a e<br>0.8 a e<br>0.6 A<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 6. On-Resistance Variation with Temperature<br>1.2<br>1.1 P| | |TTT|<br>1 See<br>0.9 oo ID=1mA<br>0.8 O R<br>0.7 mE ID=250μA<br>0.6 Pt ee ET [EN] RE<br>0.5<br>0.4 Ft tT] tT [ttt]<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 8. Gate Threshold Variation vs. Junction<br>Temperature<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br> 4 of 9 **www.diodes.com** DMC25D1UVT Document number: DS37507 Rev. 2 - 2 April 2015 © Diodes Incorporated **DMC25D1UVT** **==> picture [232 x 448] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>—————— f=1MHz<br>———————<br>Cississ<br>es<br>a<br>10 N O Cossoss<br>Jom<br>a<br>Crssrss<br>——————<br>ee ee ee<br>1 |<br>| | fT<br>0 5 10 15 20<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 10. Typical Junction Capacitance<br>10<br>RDS(ON) LimitedDS(ON) LimitedLimited<br>PW=1ms W=1ms =1ms PW=100μs<br>CTI a tl<br>1 PW=10ms W=10ms =10ms<br>er R N<br>PW=100ms W=100ms =100ms<br>0.1<br>PW=1s W=1s =1s<br>TJ(MAX)=150J(MAX)=150=150 ℃<br>TSingle PulseA=25Single PulseA=25A=25=25 ℃ PW=10s W=10s =10s EE<br>DC<br>DUT on 1*MRP board<br>VGS=10VGS=10V=10V ATM tttUTTHT<br>0.01<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 12. SOA, Safe Operation Area<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>IDD<br>**----- End of picture text -----**<br> **==> picture [438 x 681] intentionally omitted <==** **----- Start of picture text -----**<br> 1.5 100<br>1.4 ee ||| f=1MHz<br>1.3 ee || |<br>1.2 Cississ<br>ee | ee<br>1.1<br>1<br>0.9 ee ||| a<br>0.8 es ||| 10 N Cossoss<br>0.7 ee |||<br>0.6 VGS=0V, TA=150 ℃<br>0.5 | VGS=0V, TA=85 ℃ a<br>0.4 VGS=0V, TA=125 ℃ — Crssrss<br>0.3 VGS=0V, TA=25 ℃<br>0.2 i //) ae ee ee<br>0.1<br>VGS=0V, TA=-55 ℃<br>0 aoo 2,// aa 1 | | fT<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10<br>VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current<br>10 10<br>RDS(ON) LimitedDS(ON) LimitedLimited<br>8 PW=1ms W=1ms =1ms<br>7 CTI a<br>1 PW=10ms W=10ms =10ms<br>6<br>VDS=5V, ID=200mA<br>4 / er R<br>PW=100ms W=100ms =100ms<br>0.1<br>PW=1s W=1s =1s<br>2 TJ(MAX)=150J(MAX)=150=150 ℃<br>W4 TSingle PulseA=25Single PulseA=25A=25=25 ℃ PW=10s W=10s =10s<br>DUT on 1*MRP board<br>0 JOE 0.01 VGS=10VGS=10V=10V ATM<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.1 1<br>Qg (nC)<br>Figure 11. Gate Charge<br>1<br>D=0.5<br>SOU D=0.3 eeaiiewest eee, eaeat D=0.9 et me<br>S eer ee coo<br>0.1 D=0.7<br>D=0.1<br>D=0.05<br>Coon D=0.02 ea 7 CTTCCT<br>0.01<br>D=0.01<br>D=0.005 RθJA(t)=r(t) * RθJA<br>Sai RθJA=149 ℃ /W<br>Duty Cycle, D=t1 / t2<br>D=Single Pulse<br>0.001 Pc lI LIN EE VTE ll<br>1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>(V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>IDD<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> 5 of 9 **www.diodes.com** DMC25D1UVT Document number: DS37507 Rev. 2 - 2 April 2015 © Diodes Incorporated **DMC25D1UVT** ## **Typical Characteristics - P-CHANNEL** **==> picture [509 x 673] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>30.0<br>VGS=-2.5V 18 VDS= -5V<br>25.0 VGS=-3.0V 16<br>VGS=-2.0V<br>VGS=-4.5V 14<br>20.0 Bo<br>fop—— — 12 s f<br>VGS=-8.0V VGS=-1.8V 10<br>15.0 Wh ee, Sa<br>8<br>10.0 6<br>|ad VGS=-1.5V 4 a 125 ℃ 85 a ℃ o<br>5.0<br>25 ℃<br>2<br>VGS=-1.2V 150 ℃ -55 ℃<br>0.0 A e 0 oo/ aa<br>0 0.5 1 1.5 2 2.5 3<br>0 1 2 3 4 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 14. Typical Output Characteristic Figure 15. Typical Transfer Characteristic<br>0.04 0.3<br>0.035 Pitt |ELLEEy<br>0.25<br>0.03 VGS=-2.5V ID=-2.8A<br>PASEO 0.2<br>0.025<br>VGS=-4.5V<br>0.02 S an e 0.15 PHT<br>SSSeeeeee | ELL<br>0.015<br>0.1 rr PT<br>0.01 Pi eT<br>EE EE EE Ld 0.05 TTT TT<br>0.005<br>CCAP ID=-2.5A +f} tt<br>0 PEPE 0 o -_<br>0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 16. Typical On-Resistance vs. Drain Current and Figure 17. Typical Transfer Characteristic<br>Gate Voltage<br>0.03 1.4<br>0.028 VGS=- 4.5V 125 ℃ 150 ℃<br>0.026<br>Po t eet 1.2 FT<br>0.024 85 ℃<br>SESE TT<br>0.022 25 ℃ a<br>VGS=-4.5V, ID=-5.0A<br>0.02 1<br>-55 ℃<br>0.018<br>0.016<br>TT T 0.8 a VGS=-2.5V, ID=-3.0A ey] |.<br>0.014 FEET<br>0.012<br>0.01 T F E E EPE EET 0.6 Pe] yd)<br>0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT(A) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 18. Typical On-Resistance vs. Drain Current and Figure 19. On-Resistance Variation with Temperature<br>Temperature<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN CURRENT (A)<br>ID<br>(Ω)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω) , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>DS(ON)<br>R<br>(Ω)<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>**----- End of picture text -----**<br> 6 of 9 **www.diodes.com** DMC25D1UVT Document number: DS37507 Rev. 2 - 2 April 2015 © Diodes Incorporated **DMC25D1UVT** **==> picture [506 x 670] intentionally omitted <==** **----- Start of picture text -----**<br> 0.05 1.5<br>0.04 1.2<br>VGS=-2.5V, ID=-3.0A<br>0.03 spirit iy 0.9 See<br>ID=-1mA<br>0.02 — 0.6 oS ID=-250μA<br>VGS=-4.5V, ID=-5.0A<br>0.01 Fay 0.3 FELL PSS<br>0 FEE 0 FEEEEL<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ ) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 20. On-Resistance Variation with Temperature Figure 21. Gate Threshold Variation vs. Junction<br>Temperature<br>20 10000<br>f=1MHz<br>18<br>16<br>1000<br>14 ee || pee Coss fe<br>12 eee | ee — — —<br>10 VGS=0V, TA=85 ℃ 100<br>8 nN on a<br>VGS=0V, TA=125 ℃<br>6 Ciss<br>10<br>4 VGS=0V, TA=150 ℃ VGS=0V, TA=25 ℃<br>2 )// ————— Crss =<br>VGS=0V, TA=-55 ℃<br>0 1<br>0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 12<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 22. Diode Forward Voltage vs. Current Figure 23. Typical Junction Capacitance<br>8 100<br>RDS(ON) Limited PW=100μs<br>Y | PW=1ms COINS CONT<br>6 10<br>PW=10ms<br>Pet SAINTtT<br>4 1<br>PW=100ms<br>PW=1s<br>2 VDS=-6V, ID=-2.8ADS=-6V, ID=-2.8A=-6V, ID=-2.8AD=-2.8A=-2.8A 0.1 TTJ(MAX)A=25 ℃ =150 ℃ PW=10s<br>Single Pulse DC<br>DUT on 1*MRP board ee<br>VGS= -10V<br>1A<br>0 0.01<br>0 5 10 15 20 25 30 35 40 0.01 0.1 1 10 100<br>Qg (nC)g (nC) (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 25. SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>GS(TH)<br>DS(ON) V<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>(V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> **==> picture [225 x 217] intentionally omitted <==** **----- Start of picture text -----**<br> 8<br>6<br>4<br>VDS=-6V, ID=-2.8ADS=-6V, ID=-2.8A=-6V, ID=-2.8AD=-2.8A=-2.8A<br>2<br>0<br>0 5 10 15 20 25 30 35 40<br>Qg (nC)g (nC) (nC)<br>Figure 24. Gate Charge<br>(V)<br>GS<br>V<br>**----- End of picture text -----**<br> 7 of 9 **www.diodes.com** DMC25D1UVT Document number: DS37507 Rev. 2 - 2 April 2015 © Diodes Incorporated **DMC25D1UVT** | **==> picture [442 x 288] intentionally omitted <==** **----- Start of picture text -----**<br> Q2<br>In Out<br>R1 C1<br>Load<br>Ci Ca<br>Q1<br>On/Off<br>BR<br>tf<br>R2<br>**----- End of picture text -----**<br> ## **Application Circuit** ## **Package Outline Dimensions** Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. **==> picture [237 x 159] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>e1<br>E1 E<br>c L2<br><br>L<br>e 4x1<br>6x b<br>A A2<br>A1<br>**----- End of picture text -----**<br> |**TSOT26**|**TSOT26**|**TSOT26**|**TSOT26**| |---|---|---|---| |**Dim**|**Min**|**Max T**|**Max Typ**| |**A**||1.00|| |**A1**|0.01|0.10|| |**A2**|0.84|0.90|| |**D**|||2.90| |**E**|||2.80| |**E1**<br>**b**|<br>0.30|<br>0.45|1.60<br>| |**b**<br>**c**<br>**e**|0.30<br>0.12|0.45<br>0.20|<br><br>0.95| |**e**<br>**e1**|<br>|<br>|0.95<br>1.90| |**L**|0.30|0.50|| |**L2**|||0.25| |**θ**|0°|8°|4°| |**θ1**|4°|12°|| |**All Dimensions in mm**|||| 8 of 9 **www.diodes.com** DMC25D1UVT Document number: DS37507 Rev. 2 - 2 April 2015 © Diodes Incorporated **DMC25D1UVT** : |**ested Pad Layout**<br>Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.<br>**IMPORTANT NOTICE**<br>DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,<br>INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE<br>(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).<br>**Dimensions Value(in mm)**<br>**C**<br>0.950<br>**X**<br>0.700<br>**Y**<br>1.000<br>**Y1**<br>3.199<br>Y1<br>C<br>C<br>X (6x)<br>Y (6x)<br>~~soot~~<br>><br>~~I.~~<br>~~Oo~~| |---| ## **Suggested Pad Layout** **==> picture [334 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.<br>**----- End of picture text -----**<br> DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. ## **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. - B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated **www.diodes.com** 9 of 9 **www.diodes.com** DMC25D1UVT Document number: DS37507 Rev. 2 - 2 April 2015 © Diodes Incorporated
Updated at June 9, 2026
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