Image not available
Illustrative purposes only
DMC2450UV-7
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 1.03 A, 1.03 A, 0.48 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOT-563
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1W
- Power Dissipation P Channel: 1W
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 1.03A
- Continuous Drain Current Id P Channel: 1.03A
- Drain Source On State Resistance N Channel: 0.48ohm
- Drain Source On State Resistance P Channel: 0.97ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.074 € |
| Current stock | 25+ |
| Lead time | 30 days |
Datasheet
**DMC2450UV** TT
## **COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET**
## **Product Summary**
|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|---|
|**Device**<br>**BVDSS**<br>**RDS(ON) max**<br>**ID max**<br>**TA = +25°C**<br>Q1<br>20V<br>0.5Ω@VGS= 4.5V<br>1030mA<br>0.9Ω@VGS= 1.8V<br>740mA<br>Q2<br>-20V<br>1.0Ω@VGS= -4.5V<br>-700mA<br>2.0Ω@VGS= -1.8V<br>-460mA||||
|**Device**|**BVDSS**|**RDS(ON) max**|**ID max**<br>**TA = +25°C**|
|Q1|20V|0.5Ω@VGS= 4.5V|1030mA|
|||0.9Ω@VGS= 1.8V|740mA|
|Q2|-20V|1.0Ω@VGS= -4.5V|-700mA|
|||2.0Ω@VGS= -1.8V|-460mA|
## **Features and Benefits**
- Low On-Resistance
- Low Gate Threshold Voltage VGS(TH) < ±1V
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Complementary Pair MOSFET
- Ultra-Small Surface Mount Package
- ESD Protected Gate
- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)**
- **Halogen and Antimony Free. “Green” Device (Note 3)**
## **Description**
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.**
**https://www.diodes.com/quality/product-definitions/**
## **Applications**
- Power Management Functions
- Battery Operated Systems and Solid-State Relays
- Load Switch
## **Mechanical Data**
- Case: SOT563
- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Connections: See Diagram
- Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208
- Weight: 0.003 grams (Approximate)
**==> picture [509 x 95] intentionally omitted <==**
**----- Start of picture text -----**<br>
SOT563 D1 D2<br>D1 G2 S2<br>G1 G2<br>ESD PROTECTED 2 #e@. Top View Bottom View S1 G1 D2 | © Gate Protection Diode S1 © Gate Protection Diode S2<br>Top View Q1 N-CHANNEL Q2 P-CHANNEL<br>Equivalent Circuit<br>**----- End of picture text -----**<br>
## **Ordering Information** (Note 4)
|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMC2450UV-7|SOT563|3,000/Tape & Reel|
|DMC2450UV-7B|SOT563|8,000/Tape & Reel(Note 5)|
|DMC2450UV-13|SOT563|10,000/Tape &Reel|
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
5. Change the pitch from 4mm to 2mm in T & R.
**Marking Information**
CA5 = Product Type Marking Code YM = Date Code Marking **CA5 YM** Y = Year (ex: H = 2020) M = Month (ex: 9 = September) Date Code Key **Year 2015 … 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 Code** C … H I J K L M N O P R ~~ed~~ **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code** 1 2 3 4 5 ~~e~~ 6 7 8 9 O N D ~~**e** e ee ee ee~~ DMC2450UV 1 of 10 March 2020 Document number: DS38197 Rev. 2 - 2 **www.diodes.com** © Diodes Incorporated
**DMC2450UV**
**Maximum Ratings - Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)
|**Maximum Ratings - Q1 N-CHANNELgs - Q1 N-CHANNELs - Q1 N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings - Q1 N-CHANNELgs - Q1 N-CHANNELs - Q1 N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings - Q1 N-CHANNELgs - Q1 N-CHANNELs - Q1 N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings - Q1 N-CHANNELgs - Q1 N-CHANNELs - Q1 N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings - Q1 N-CHANNELgs - Q1 N-CHANNELs - Q1 N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings - Q1 N-CHANNELgs - Q1 N-CHANNELs - Q1 N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|20|V|
|Gate-Source Voltage|||VGSS|±12|V|
|Continuous Drain Current (Note 7) VGS= 4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|1,030<br>800|mA|
||t<10s|TA= +25°C<br>TA= +70°C|ID|1,150<br>900|mA|
|Continuous Drain Current (Note 7) VGS= 1.8V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|740<br>570|mA|
||t<10s|TA= +25°C<br>TA= +70°C|ID|870<br>700|mA|
|Pulsed Drain Current (10μs Pulse, DutyCycle = 1%)|||IDM|3|A|
|Maximum BodyDiode Continuous Current|||IS|800|mA|
## **Maximum Ratings - Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)
|**Maximum Ratingsgss** **- Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **- Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **- Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **- Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **- Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **- Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-20|V|
|Gate-Source Voltage|||VGSS|±12|V|
|Continuous Drain Current (Note 7) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-700<br>-550|mA|
||t<10s|TA= +25°C<br>TA= +70°C|ID|-820<br>-640|mA|
|Continuous Drain Current (Note 7) VGS= -1.8V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-460<br>-350|mA|
||t<10s|TA= +25°C<br>TA= +70°C|ID|-550<br>-420|mA|
|Pulsed Drain Current (10μs Pulse, DutyCycle = 1%)|||IDM|-2|A|
|Maximum BodyDiode Continuous Current|||IS|-800|mA|
## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)
|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 6)||PD|0.45|W|
|Thermal Resistance, Junction to Ambient (Note 6)|SteadyState|RθJA|281|°C/W|
||t<10s||210|°C/W|
|Total Power Dissipation (Note 7)||PD|1|W|
|Thermal Resistance, Junction to Ambient (Note 7)|SteadyState|RθJA|129|°C/W|
||t<10s||97|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
2 of 10 **www.diodes.com**
DMC2450UV Document number: DS38197 Rev. 2 - 2
March 2020 © Diodes Incorporated
**DMC2450UV**
## **Electrical Characteristics - Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)
|**Electrical Characteristics** **-** **Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **-** **Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **-** **Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **-** **Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **-** **Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **-** **Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **-** **Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 8) **<br>~~———==———~~|||||||
|Drain-Source Breakdown Voltage<br>~~———==———~~|BVDSS<br>~~==———~~|20<br>~~==———~~|—<br>~~==———~~|—<br>~~==———~~|V<br>~~==———~~|VGS= 0V, ID= 1mA<br>~~==———~~|
|Zero Gate Voltage Drain Current TJ= +25°C<br>~~———==———~~|IDSS<br>~~==———~~|—<br>~~==———~~|—<br>~~==———~~|100<br>~~==———~~|nA<br>~~==———~~|VDS= 20V, VGS= 0V<br>~~==———~~|
|Gate-Source Leakage<br>~~———==———~~|IGSS<br>~~==———~~|—<br>~~==———~~|—<br>~~==———~~|±1.0<br>~~==———~~|µA<br>~~==———~~|VGS= ±5V, VDS= 0V<br>~~==———~~|
|||—<br>~~==———~~|—<br>~~==———~~|±10.0<br>~~==———~~||VGS= ±8V, VDS= 0V<br>~~==———~~|
|**ON CHARACTERISTICS(Note 8) **<br>~~———==———~~|||||||
|Gate Threshold Voltage<br>~~———==———~~|VGS(TH)<br>~~==———~~|0.5<br>~~==———~~|—<br>~~==———~~|0.9<br>~~==———~~|V<br>~~==———~~|VDS= VGS, ID= 250μA<br>~~==———~~|
|Static Drain-Source On-Resistance<br>~~———==———~~|RDS(ON)<br>~~==———~~|—<br>~~==———~~|0.3<br>~~==———~~|0.48<br>~~==———~~|Ω<br>~~==———~~|VGS= 5.0V, ID= 200mA<br>~~==———~~|
|||—|0.35|0.5||VGS= 4.5V, ID= 200mA|
|||—|0.45|0.7||VGS= 2.5V, ID= 200mA|
|||—|0.55|0.9||VGS= 1.8V, ID= 100mA|
|||—|0.65|1.5||VGS= 1.5V, ID= 50mA|
|||—|2|—||VGS= 1.2V, ID= 1mA|
|Diode Forward Voltage<br>~~So~~|VSD<br>~~So~~|—<br>~~So~~|0.7<br>~~So~~|1.2<br>~~So~~|V<br>~~So~~|VGS= 0V, IS= 500mA|
|**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~So~~|||||||
|Input Capacitance<br>~~So~~|Ciss<br>~~So~~|—<br>~~So~~|37.1<br>~~So~~|—<br>~~So~~|pF<br>~~So~~<br>~~e~~|VDS= 10V, VGS= 0V,<br>f = 1.0MHz<br>~~ee~~|
|Output Capacitance<br>~~So~~|Coss<br>~~So~~|—<br>~~So~~|6.5<br>~~So~~|—<br>~~So~~|||
|Reverse Transfer Capacitance<br>~~So~~<br>~~————~~|Crss<br>~~So~~|—<br>~~So~~|4.8<br>~~So~~|—<br>~~So~~<br>~~e~~|||
|Gate Resistance<br>~~So~~<br>~~————~~|Rg<br>~~So~~|—<br>~~So~~|68<br>~~So~~|—<br>~~So~~<br>~~e~~|Ω<br>~~So~~<br>~~e~~|VDS= 0V, VGS= 0V,<br>~~ee~~|
|Total Gate Charge<br>~~————~~|Qg|—|0.5|—<br>~~e~~|nC<br>~~e~~|VGS= 4.5V, VDS= 10V,<br>ID= 250mA<br>~~ee~~|
|Gate-Source Charge<br>~~————~~|Qgs|—|0.07|—<br>~~e~~|||
|Gate-Drain Charge<br>~~————~~|Qgd|—|0.1|—<br>~~e~~|||
|Turn-On DelayTime<br>~~————~~<br>~~ES~~|tD(ON)<br>~~ES~~|—<br>~~ES~~|4.06<br>~~ES~~|—<br>~~e~~<br>~~ES~~|ns<br>~~e~~<br>~~ES~~|VDD= 10V, VGS= 4.5V,<br>RL= 47Ω, RG= 10Ω,<br>ID= 200mA<br>~~ee~~<br>~~ES~~|
|Turn-On Rise Time<br>~~————~~<br>~~ES~~|tR<br>~~ES~~|—<br>~~ES~~|7.28<br>~~ES~~|—<br>~~e~~<br>~~ES~~|||
|Turn-Off DelayTime<br>~~ES~~|tD(OFF)<br>~~ES~~|—<br>~~ES~~|13.74<br>~~ES~~|—<br>~~ES~~|||
|Turn-Off Fall Time<br>~~ES~~|tF<br>~~ES~~|—<br>~~ES~~|10.54<br>~~ES~~|—<br>~~ES~~|||
**==> picture [468 x 211] intentionally omitted <==**
**----- Start of picture text -----**<br>
2.0 1.5<br>VGS = 4.5V<br>VGS = 2.5V VDS = 5V<br>Dae /<br>1.5 V GS = 2.0V<br>1.0<br>VGS = 1.8V<br>1.0<br>0.5<br>0.5 aR VGS = 1.5V TTAA = 150°C = 150癈<br>TTAA = 125°C = 125癈<br>TTA = 85°C A = 85癈 T AA = 2 55°C 癈<br>0 VGS = 1.2V 0 TT A = -55°C = -55癈<br>0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>
3 of 10 **www.diodes.com**
DMC2450UV Document number: DS38197 Rev. 2 - 2
March 2020 © Diodes Incorporated
**DMC2450UV**
**==> picture [481 x 663] intentionally omitted <==**
**----- Start of picture text -----**<br>
2.0 Pi te TL TE Ey 0.8<br>VGS = 4.5V<br>Bane<br>1.6<br>0.6<br>PT tee LT LT EE<br>TTAA = 1 = 1 50 癈°C<br>1.2 VGS = 1.5V<br>A eA 0.4 T AA = = 125 癈°C<br>TTAA = 85°C = 85癈<br>0.8<br>TTAA = 25°C = 25癈<br>VGS = 1.8V VGS = 2.5V 0.2 T T AA = -55°C = -55癈<br>0.4 Sorooo VGS e = 5.0V V GS ti = 4.5V<br>0 0<br>0 esi 0.4 0.8 Pi, 1.2 tt 1.6 2 pees 0 0.4 0.8 1.2 1.6<br>ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A)<br>Fig. 3 Typical On-Resistance Fig. 4 Typical Drain-Source On-Resistance<br>vs. Drain Current and Gate Voltage vs. Drain Current and Temperature<br>1.6 0.8<br>VGS = 4.5V<br>1.4 ID = 1.0A<br>ef<br>0.6<br>V GSGS = 2 = 2 .5 V .V<br>ID = 500mA<br>1.2<br>tilly<br>0.4 VGS = 2.5V<br>ID = 500mA<br>1.0<br>BED Anie<br>0.2 V GS = 4.5V<br>0.8 ID = 1.0A<br>eT<br>0.6 0<br>-50 rE -25 EEL 0 25 50 75 ELL 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( 癈°C ) TJ, JUNCTION TEMPERATURE ( °C癈 )<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>1.2 1.6<br>1.0 LiL ELE {| | ft fy |<br>1.2 TTAA = 25°C = 25癈<br>0.8 I D = 1mA<br>PSST IDID = 250μA = 250礎 | Ger<br>0.6 tts .- 0.8 TT<br>0.4<br>{iL ELiP 0.4 fe<br>0.2<br>LTE ELEL 4<br>0 0<br>-50 PLE -25 0 25 LELELE 50 75 100 125 150 0 TT 0.2 0.4 0.6 LAT 0.8 1.0 1.2<br>TA, AMBIENT TEMPERATURE ( 癈°C ) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>DS(ON)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, SOURCE CURRENT (A)<br>IS<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
4 of 10 **www.diodes.com**
DMC2450UV Document number: DS38197 Rev. 2 - 2
March 2020 © Diodes Incorporated
**DMC2450UV** fs
**==> picture [104 x 25] intentionally omitted <==**
**----- Start of picture text -----**<br>
' nN c o R P o R A T E D®<br>**----- End of picture text -----**<br>
**==> picture [473 x 441] intentionally omitted <==**
**----- Start of picture text -----**<br>
60 1,000 EEaa e™<br>—<$—<—— a a QS TT AA = 150°C = 150癈 ||<br>50 f = 1MHz Seee ee ff<br>100 | | | |TT<br>40 ——— LS———aa ES ACOSc GOee | TTA CO A = 1 = 1 25 癈°C es||<br>Ciss<br>30 | 10 P| | | | tT | dt |<br>es ee eSee(|<br>eeS$ — SOC TT A A = 85°C = 85癈 +|J<br>20<br>\ 1 a Qeee ee a TTAA = 2= 2 ee 5 °癈C<br>10 \ — Coss a e San eee e | ee TT A A= = -55-55°癈C aeee |<br>—— a ee —<br>ee ee ~ | | | Jf ff [ff]<br>0 Crss 0.1<br>0 5 10 15 20 2 4 6 8 10 12 14 16 18 20<br>VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Typical Capacitance Fig. 10 Typical Drain-Source Leakage Current<br>vs. Drain-Source Voltage<br>5 10<br>a I a OO |<br>poy)<br>PP WW = 10 = 1 0 0μs 祍 P W = 10µs<br>|PT I<br>4<br>IVD = 250mADS = 10V 1 TUKetLt—a|rs oo ot R Li R Li DS(ON) DS(on) mited "UeERRNENPANE DC RANSESSNAWONstONNUTTINNENNTN)PNUTTENETETTT) HHH<br>3 tt | PW = 10s | idJNRSESUIENERB<br>0.1 aKee TT | PW P = 1s W = 100ms RANNINNNINNSSHBaiTT<br>a a | WY NS<br>2 aSSCeti tt PW = 10ms ARSONDNGSeerll<br>PW = 1ms<br>0.01 |<br>1 eee eee et<br>Tyimaxy = 150°C, SE tt<br>1 bec eT<br>0 0.001<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.01 0.1 1 10 100<br>Qg, TOTAL GATE CHARGE (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 11 Gate-Charge Characteristics Fig. 12 SOA, Safe Operation Area<br>GS<br>, GATE-SOURCE VOLTAGE (V)<br>V<br>C, CAPACITANCE (pF)<br>DSS<br>, DRAIN-SOURCE LEAKAGE CURRENT (nA)<br>I<br>D<br>, DRAIN CURRENT (A)<br>I<br>**----- End of picture text -----**<br>
5 of 10 **www.diodes.com**
DMC2450UV Document number: DS38197 Rev. 2 - 2
March 2020 © Diodes Incorporated
**DMC2450UV**
## **Electrical Characteristics - Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)
|**Electrical Characteristics** **-** **Q2 P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **-** **Q2 P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **-** **Q2 P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **-** **Q2 P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **-** **Q2 P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **<br>**Max**<br>**Unit**|**Unit**<br>**Test Condition**|
|**OFF CHARACTERISTICS(Note 8) **<br>~~eee~~|||||
|Drain-Source Breakdown Voltage<br>~~eee~~|BVDSS<br>~~eee~~|-20<br>~~eee~~|—<br>—<br>~~eee~~|V<br>VGS= 0V,ID= -1mA<br>~~eee~~|
|Zero Gate Voltage Drain Current TJ= 25°C<br>~~eee~~|IDSS<br>~~eee~~|—<br>~~eee~~|—<br>-100<br>~~eee~~|nA<br>VDS= -20V,VGS= 0V<br>~~eee~~|
|Gate-Source Leakage<br>~~a~~|IGSS<br>~~a~~|—<br>~~a~~|—<br>±1.0<br>—<br>±10.0<br>~~a~~|µA<br>VGS= ±5V,VDS= 0V<br>VGS= ±8V,VDS= 0V<br>~~a~~|
|||—<br>~~a~~|||
|**ON CHARACTERISTICS(Note 8) **|||||
|Gate Threshold Voltage|VGS(TH)|-0.5|—<br>-1.0|V<br>VDS= VGS,ID= -250μA|
|Static Drain-Source On-Resistance<br>~~i~~|RDS(ON)<br>~~i~~|—<br>~~i~~<br>~~===1—~~|0.67<br>0.97<br>0.7<br>1.0<br>0.9<br>1.5<br>1.2<br>2.0<br>1.5<br>3.0<br>5<br>—<br>~~i~~<br>~~===1—~~<br>~~——~~<br>~~GO~~<br>~~(OG~~|Ω<br>VGS= -5V,ID= -100mA<br>VGS= -4.5V,ID= -100mA<br>VGS= -2.5V,ID= -80mA<br>VGS= -1.8V,ID= -40mA<br>VGS= -1.5V,ID= -30mA<br>VGS= -1.2V,ID= -1mA<br>~~i~~<br>~~===1—~~<br>~~(OG~~|
|||—<br>~~i~~<br>~~===1—~~|||
|||—<br>~~i~~<br>~~===1—~~|||
|||—<br>~~i~~<br>~~===1—~~|||
|||—<br>~~i~~<br>~~===1—~~<br>~~——~~|||
|||—<br>~~i~~<br>~~===1—~~<br>~~——~~|||
|Diode Forward Voltage<br>~~DD~~|VSD<br>~~DD~~|—<br>~~DD~~|-0.75<br>-1.2<br>~~DD~~<br>~~GO~~<br>~~(OG~~|V<br>VGS= 0V,IS= -330mA<br>~~DD~~<br>~~(OG~~|
|**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~GO~~<br>~~(OG~~<br>~~a~~|||||
|Input Capacitance<br>~~a~~|Ciss|—|46.1<br>—<br>7.2<br>—<br>4.9<br>—|pF<br>VDS= -10V, VGS= 0V,<br>f = 1.0MHz|
|Output Capacitance<br>~~a~~|Coss|—|||
|Reverse Transfer Capacitance|Crss|—|||
|Gate Resistance<br>~~———~~|Rg|—|14.3<br>—<br>~~e~~|Ω<br>VDS= 0V,VGS= 0V<br>~~ee~~|
|Total Gate Charge VGS= -4.5V<br>~~———~~|Qg|—|0.5<br>—<br>0.85<br>—<br>0.09<br>—<br>0.09<br>—<br>~~e~~<br>~~==~~|nC<br>VDS= -10V, ID= -250mA<br>~~ee~~<br>~~ee~~|
|Total Gate Charge VGS= -10V<br>~~———~~|Qg|—|||
|Gate-Source Charge<br>~~———~~|Qgs|—|||
|Gate-Drain Charge<br>~~———~~<br>~~—<_<~~|Qgd<br>~~==~~|—<br>~~==~~|||
|Turn-On DelayTime<br>~~———~~<br>~~—<_<~~|tD(ON) <br>~~==~~|—<br>~~==~~|8.5<br>—<br>4.3<br>—<br>20.2<br>—<br>19.2<br>—<br>~~e~~<br>~~==~~|ns<br>VDD= -3V, VGS= -2.5V,<br>RL= 300Ω, RG= 25Ω,<br>ID= -100mA<br>~~ee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~—<_<~~|tR<br>~~==~~|—<br>~~==~~|||
|Turn-Off DelayTime<br>~~—<_<~~|tD(OFF) <br>~~==~~|—<br>~~==~~|||
|Turn-Off Fall Time<br>~~—<_<~~|tF<br>~~==~~|—<br>~~==~~|||
Notes: 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing.
**==> picture [215 x 214] intentionally omitted <==**
**----- Start of picture text -----**<br>
1.0<br>PLT VGS = -4.0V | | tt<br>0.8 VGS = -3.0V<br>V GS = -2.0V<br>0.6<br>[KK V GS = -1.8V<br>0.4<br>VGS = -1.6V<br>0.2 I es VGS = -1.4V<br>VGS = -1.2V<br>VGS = -1.0V<br>0<br>0 1 2 3 4 5<br>-VDS, DRAIN -SOURCE VOLTAGE (V)<br>Fig. 13 Typical Output Characteristics<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br>
**==> picture [215 x 214] intentionally omitted <==**
**----- Start of picture text -----**<br>
1.0<br>VVDSDS = -5V = 5V ///<br>0.8<br>0.6<br>j<br>0.4<br>0.2 TTAA = 150°C = 150 C PPP P|<br>TTAA = 125°C = 125 C TTAATT = 25°C = 25 CAA = 85°C = 85 C <br>0 T AA = -55° = -55 C<br>0 1 2 3 4<br>-VGS, GATE SOURCE VOLTAGE(V)<br>Fig. 14 Typical Transfer Characteristics<br>, DRAIN CURRENT (A)<br>-I<br>D<br>**----- End of picture text -----**<br>
6 of 10 **www.diodes.com**
DMC2450UV Document number: DS38197 Rev. 2 - 2
March 2020 © Diodes Incorporated
**DMC2450UV**
**==> picture [491 x 663] intentionally omitted <==**
**----- Start of picture text -----**<br>
2.0 10<br>1.8 VVGSGS = -4.5V = 4.5V<br>1.6<br>1.4<br>At V GS = -1.8V CONICEEC<br>1.2 TA = 150 C°<br>1 T A = 85°C TA = 125°C<br>1.0 VGS = -2.5V<br>0.8 TA = 25 ° C<br>0.6 V GS = -4.5V TA = -55°C<br>0.4<br>e sn neee eee AtMAE |<br>0.2<br>0.1<br>0 SSS CAT<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.01 0.1 1 10<br>-ID, DRAIN SOURCE CURRENT (A) -IDFig. 16 Typical On-Resistance vs. , DRAIN SOURCE CURRENT (A)<br>Fig. 15 Typical On-Resistance vs.<br>Drain Current and Temperature<br>Drain Current and Gate Voltage<br>1.6 2.0<br>VGS = -2.5V<br>ID = -300mA<br>1.4 V GS = -4.5V<br>IIDD = -430mA = -4300mA 1.5<br>VGS = -1.8V<br>ID = -150mA<br>a,LLL yw [iit tece<br>1.2 V GS = -1.8V<br>ID = -150mA 1.0 VGS = -2.5V<br>ID = -300mA<br>1.0 aa Tere- —t | 1 _<br>4 TS He<br>VGS = -4.5V<br>0.5 I D = -430mA<br>L<br>0.8 ATT «= eee<br>0.6 PEL EEL LE 0 TEL<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 17 On-Resistance Variation with Temperature Fig. 18 On-Resistance vs.Temperature<br>1.0 1.0<br>0.8 II DD = -300μA = 300A 0.8<br>SS Ea<br>0.6 “= IDID = -250μA = 250A 0.6 aaa T A = 25C<br>0.4 Sy= 0.4 Gane<br>0.2 FEEEEEEN) = EEE 0.2<br>0 LT TELELL 0 LAL<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>TJ, JUNCTION TEMPERATURE (C) -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 19 Gate Threshold Variation vs. Junction Temperature Fig. 19 Gate Threshold Variation vs. Ambient Temperature Fig. 20 Diode Forward Voltage vs. Current<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>-V<br>DS(ON)<br>)<br>,DRAIN-SOURCE ON-RESISTANCE(<br>R<br>GS(th)<br>, GATE THRESHOLD VOLTAGE (V)<br>-V<br>DS(ON)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE(<br>R<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>, SOURCE CURRENT (A)<br>-I<br>S<br>**----- End of picture text -----**<br>
7 of 10 **www.diodes.com**
DMC2450UV Document number: DS38197 Rev. 2 - 2
March 2020 © Diodes Incorporated
**DMC2450UV**
**==> picture [484 x 652] intentionally omitted <==**
**----- Start of picture text -----**<br>
80 1,000<br>f = 1MHz<br>60 |PF |Ff || 100 |FEE===——EEEEe|FEE===——EEEEe|===——EEEEe|——EEEEe|| ft ft fT TAA = 1A = 1 = 125C T AA = 1A = 1 = 125C = 150C 25C 50C EEE C C C C<br>a ===<br>a ===<br>40 — C iss 10 AaoeeeS=—aoeeeS=— TAA = 85C 85C5CCC<br>{_—} |__| —_}-_} _|-_}_+__|<br>Pf Se<br>TA = 25CA = 25C = 25C5CCC<br>20 a a 1 e s es sO sO eGOGO GO ee |<br>Ne<br>Ne C oss ptQe QOeTQe QOeT QOeTeT |<br>0 oS Crss 0.1 FREE ELELLQOQO<br>0 5 10 15 20 0 4 8 12 16 20<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -VDS, DRAIN-SOURCE VOLTAGE(V)DS, DRAIN-SOURCE VOLTAGE(V), DRAIN-SOURCE VOLTAGE(V)<br>Fig. 21 Typical Junction Capacitance Fig. 22 Typical Drain-Source Leakage Current vs. Voltage<br>8 10<br>7 J | a OO | PP WW = 100 = 100μ祍s PW = 10µs 1]<br>6 ae IVD = -250mADS = -10V v4auGJ 1 ELLENLtSS LTTE RRDSDS(ON(on TLLEEE )) ACNOINGTmctotaiiTIT|<br>LL imited<br>5 DC<br>P W = 10s<br>4 Pi TT LsWA VA /ELLE| 0.1 [EINeae [LTE [ERNpe PWP=W i 1s = 100ms SORENOWRAPA S YLTTT)TET<br>3 VA neil eens P W = 10ms NGeee<br>PW = 1ms<br>2 FL IACI LLL 0.01 EALt fet RTINNHRB<br>1 fa Tymax)= 150°C Ee<br>Sole ise ee<br>0 ARG 0.001 Tec PUeeCEPCC<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.01 0.1 1 10 100<br>Qg, TOTAL GATE CHARGE (nC) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 23 Gate-Charge Characteristics Fig. 24 SOA, Safe Operation Area<br>1<br>eet D = 0.7<br>D = 0.5<br>TtNe me ea a See TToerTILE EmreROITII EREtiteTOL OTT<br>ee asim eects a<br>D = 0.3<br>FTTH Re PITTI PTT PTT<br>0.1 Seer LLL LUTLLAMA<br>EEC D = 0.1 ET<br>D = 0.9<br>Serene D = 0.05 =P<br>bo [ERNIE] eee came ee eee eee ent een<br>cd)aa Ze RJA(t) = r(t) * RJA LUT<br>D = 0.02 RRθJA JA = 275= 275癈℃/W/W<br>ee Ue ee a hl<br>0.01 mh UIE | AIT ELAN T |<br>D = 0.01<br>OE P(pk) EAH<br>Se ee oat ea ee at ee t 1 FH<br>FROME D = 0.005 TT TT | t 2 nm al<br>It [ber] TJ - TA = P * RJA(t)<br>D = Single Pulse Duty Cycle, D = t 1 /t 2<br>0.001 Fr nT i<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 25 Transient Thermal Response<br>, JUNCTION CAPACITANCE (pF)<br>C<br>T<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>-V<br>GS<br>, GATE-SOURCE VOLTAGE (V)<br>V<br>r(t), TRANSIENT THERMAL RESISTANCE<br>, DRAIN CURRENT (A)<br>D<br>-I<br>DSS<br>, LEAKAGE CURRENT (nA)<br>-I<br>**----- End of picture text -----**<br>
**==> picture [219 x 210] intentionally omitted <==**
**----- Start of picture text -----**<br>
1,000<br>T = 150C<br>EEE<br>100 |FEE===——EEEEe|FEE===——EEEEe|===——EEEEe|——EEEEe|| ft ft fT TAA = 1A = 1 = 125C<br>===<br>===<br>10<br>AaoeeeS=—aoeeeS=— TAA = 85C 85C5CCC<br>{_—} |__| —_}-_} _|-_}_+__|<br>Se<br>TA = 25CA = 25C = 25C5CCC<br>1 e s es sO sO eGOGO GO ee |<br>Ne<br>ptQe QOeTQe QOeT QOeTeT |<br>0.1 FREE ELELLQOQO<br>0 4 8 12 16 20<br>-VDS, DRAIN-SOURCE VOLTAGE(V)DS, DRAIN-SOURCE VOLTAGE(V), DRAIN-SOURCE VOLTAGE(V)<br>Fig. 22 Typical Drain-Source Leakage Current vs. Voltage<br>DSS<br>, LEAKAGE CURRENT (nA)<br>-I<br>**----- End of picture text -----**<br>
8 of 10 **www.diodes.com**
DMC2450UV Document number: DS38197 Rev. 2 - 2
March 2020 © Diodes Incorporated
**DMC2450UV**
## **Package Outline Dimensions**
Please see http://www.diodes.com/package-outlines.html for the latest version.
## **SOT563**
**==> picture [229 x 219] intentionally omitted <==**
**----- Start of picture text -----**<br>
b<br>a a<br>aia<br>E E1<br>L<br>R.01<br>e<br>c<br>e1<br>D<br>A<br>a<br>a<br>**----- End of picture text -----**<br>
|**SOT563**|**SOT563**|**SOT563**|**SOT563**|
|---|---|---|---|
|**Dim**|**Min**|**Max**|**Typ**|
|**A**|0.55|0.60|0.60|
|**b**|0.15|0.30|0.20|
|**c**|0.10|0.18|0.11|
|**D**|1.50|1.70|1.60|
|**E**|1.55|1.70|1.60|
|**E1**|1.10|1.25|1.20|
|**e**|--|--|0.50|
|**e1**|0.90|1.10|1.00|
|**L**|0.10|0.30|0.20|
|**a**|8°|9°|7°|
|**All Dimensions in mm**||||
## **Suggested Pad Layout**
Please see http://www.diodes.com/package-outlines.html for the latest version.
## **SOT563**
**==> picture [133 x 151] intentionally omitted <==**
**----- Start of picture text -----**<br>
C X<br>Y<br>Y1 G C1<br>000,<br>X1<br>‘00<br>**----- End of picture text -----**<br>
**==> picture [107 x 77] intentionally omitted <==**
**----- Start of picture text -----**<br>
Dimensions Value (in mm)<br>C 0.500<br>C1 1.270<br>G 0.600<br>X 0.300<br>X1 1.300<br>Y 0.670<br>Y1 1.940<br>**----- End of picture text -----**<br>
9 of 10 **www.diodes.com**
DMC2450UV Document number: DS38197 Rev. 2 - 2
March 2020 © Diodes Incorporated
**DMC2450UV**
## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
## **LIFE SUPPORT**
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
- A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
- B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
**www.diodes.com**
10 of 10 **www.diodes.com**
DMC2450UV Document number: DS38197 Rev. 2 - 2
March 2020 © Diodes Incorporated
Updated at June 9, 2026
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →