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DMC2400UV-13
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 1.03 A, 1.03 A, 0.48 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOT-563
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1W
- Power Dissipation P Channel: 1W
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 1.03A
- Continuous Drain Current Id P Channel: 1.03A
- Drain Source On State Resistance N Channel: 0.48ohm
- Drain Source On State Resistance P Channel: 0.97ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.068 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
## **DMC2400UV** e& rid **COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET** ## **Product Summary** |**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**| |---|---|---|---| ||||| |**Device**|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TA = +25°C**| |Q1|20V|0.5Ω@VGS= 4.5V|1030mA| |||0.9Ω@VGS= 1.8V|740mA| |Q2|-20V|1.0Ω@VGS= -4.5V|-700mA| |||2.0Ω@VGS= -1.8V|-460mA| ## **Description** This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. ## **Applications** - Power Management Functions - Battery Operated Systems and Solid-State Relays - Load Switch ## **Features and Benefits** - Low On-Resistance - Low Gate Threshold Voltage VGS(TH) <1V - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - Complementary Pair MOSFET - Ultra-Small Surface Mount Package - **ESD Protected Gate** - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** - **Halogen and Antimony Free. “Green” Device (Note 3)** - **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/** ## **Mechanical Data** - Case: SOT563 - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminal Connections: See Diagram - Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 © **e3** - Weight: 0.003 grams (Approximate) **==> picture [33 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> SOT563<br>**----- End of picture text -----**<br> **==> picture [68 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> ESD PROTECTED<br>**----- End of picture text -----**<br> **==> picture [37 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Top View<br>**----- End of picture text -----**<br> Bottom View **==> picture [179 x 16] intentionally omitted <==** **----- Start of picture text -----**<br> Internal Schematic Top View<br>Pin Out<br>**----- End of picture text -----**<br> ## **Ordering Information** (Note 4) |**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)| |---|---|---| |||| |**Part Number**|**Case**|**Packaging**| |DMC2400UV-7|SOT563|3000/Tape &Reel| |DMC2400UV-7B|SOT563|8000/Tape &Reel(Note 5)| |DMC2400UV-13|SOT563|10000/Tape &Reel| - Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 5. Change the pitch from 4mm to 2mm in T&R. ## **Marking Information** |||||||||CA3 = Product Type Marking Code|CA3 = Product Type Marking Code|CA3 = Product Type Marking Code|CA3 = Product Type Marking Code|CA3 = Product Type Marking Code|||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||||||CA3||YM|YM = Date Code Marking|||||||||| ||||||e|||Y = Year (ex: H = 2020)|||||||||| |Date CodeKey|||||ry}|LI||M = Month (ex: 9 = September)||M = Month (ex: 9 = September)|||||||| ||**Year**||**2011**|**…**|**2020**||**2021**|**2022**<br>**2023**||**2024**|**2025**||**2026**|**2027**|**2028**|**2029**|| ||**Code**||Y|…|H||I|J<br>K||L|M||N|O|P|R|| ||||||||||||||||||| ||**Month**||**Jan**|**Feb**|**Mar**||**Apr**|**May**<br>**Jun**||**Jul**|**Aug**||**Sep**|**Oct**|**Nov**|**Dec**|| ||**Code**||1|2|3||4|5<br>6||7|8||9|O|N|D|| |DMC2400UV||||||||1 of 10|||||||March 2020||| |Document number: DS35537 Rev. 11 - 2|Document number: DS35537 Rev. 11 - 2|Document number: DS35537 Rev. 11 - 2|Document number: DS35537 Rev. 11 - 2|Document number: DS35537 Rev. 11 - 2||||**www.diodes.com**|||||||© Diodes Incorporated|© Diodes Incorporated|| DMC2400UV Document number: DS35537 Rev. 11 - 2 **DMC2400UV** ## **Maximum Ratings - Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratings - Q1 N-CHANNELgs - Q1 N-CHANNELs - Q1 N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings - Q1 N-CHANNELgs - Q1 N-CHANNELs - Q1 N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings - Q1 N-CHANNELgs - Q1 N-CHANNELs - Q1 N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings - Q1 N-CHANNELgs - Q1 N-CHANNELs - Q1 N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings - Q1 N-CHANNELgs - Q1 N-CHANNELs - Q1 N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings - Q1 N-CHANNELgs - Q1 N-CHANNELs - Q1 N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---| ||||||| |**Characteristic**|||**Symbol**|**Value**|**Unit**| |Drain-Source Voltage|||VDSS|20|V| |Gate-Source Voltage|||VGSS|±12|V| |Continuous Drain Current (Note 7) VGS= 4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|1030<br>800|mA| ||t<10s|TA= +25°C<br>TA= +70°C|ID|1150<br>900|mA| |Continuous Drain Current (Note 7) VGS= 1.8V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|740<br>570|mA| ||t<10s|TA= +25°C<br>TA= +70°C|ID|870<br>700|mA| |Pulsed Drain Current (10μs Pulse, DutyCycle = 1%)|||IDM|3|A| |Maximum BodyDiode Continuous Current|||IS|800|mA| ## **Maximum Ratings** - **Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratingsgss**-**Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**-**Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**-**Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**-**Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**-**Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**-**Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---| ||||||| |**Characteristic**|||**Symbol**|**Value**|**Unit**| |Drain-Source Voltage|||VDSS|-20|V| |Gate-Source Voltage|||VGSS|±8|V| |Continuous Drain Current (Note 7) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-700<br>-550|mA| ||t<10s|TA= +25°C<br>TA= +70°C|ID|-820<br>-640|mA| |Continuous Drain Current (Note 7) VGS= -1.8V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-460<br>-350|mA| ||t<10s|TA= +25°C<br>TA= +70°C|ID|-550<br>-420|mA| |Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)|||IDM|-2|A| |Maximum BodyDiode Continuous Current|||IS|-800|mA| ## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) |**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||| |---|---|---|---|---| |**Characteristic**||**Symbol**|**Value**|**Unit**| |Total Power Dissipation (Note 6)||PD|0.45|W| |Thermal Resistance, Junction to Ambient (Note 6)|SteadyState|RθJA|281|°C/W| ||t<10s||210|°C/W| |Total Power Dissipation (Note 7)||PD|1|W| |Thermal Resistance, Junction to Ambient (Note 7)|SteadyState|RθJA|129|°C/W| ||t<10s||97|°C/W| |Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C| Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 2 of 10 **www.diodes.com** DMC2400UV Document number: DS35537 Rev. 11 - 2 March 2020 © Diodes Incorporated **DMC2400UV** ## **Electrical Characteristics** - **Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.) |**Electrical Characteristics**-**Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**-**Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**-**Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**-**Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**-**Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**-**Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**-**Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---|---| |||||||| |**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**| |**OFF CHARACTERISTICS(Note 8) **<br>~~=~~||||||| |Drain-Source Breakdown Voltage<br>~~=~~|BVDSS<br>~~=~~|20<br>~~=~~|—<br>~~=~~|—<br>~~=~~|V<br>~~=~~|VGS= 0V, ID= 1mA<br>~~=~~| |Zero Gate Voltage Drain Current TJ= +25°C<br>~~=~~|IDSS<br>~~=~~|—<br>~~=~~|—<br>~~=~~|100<br>~~=~~|nA<br>~~=~~|VDS= 20V, VGS= 0V<br>~~=~~| |Gate-Source Leakage<br>~~=~~|IGSS<br>~~=~~|—<br>~~=~~|—<br>~~=~~|±1<br>~~=~~|µA<br>~~=~~|VGS= ±5V, VDS= 0V<br>~~=~~| |||—<br>~~=~~|—<br>~~=~~|±4.0<br>~~=~~||VGS= ±8V, VDS= 0V<br>~~=~~| |**ON CHARACTERISTICS(Note 8) **<br>~~=~~||||||| |Gate Threshold Voltage<br>~~=~~|VGS(TH)<br>~~=~~|0.5<br>~~=~~|—<br>~~=~~|0.9<br>~~=~~|V<br>~~=~~|VDS= VGS, ID= 250μA<br>~~=~~| |Static Drain-Source On-Resistance|RDS(ON)|—|0.3|0.48|Ω|VGS= 5.0V, ID= 200mA| |||—|0.35|0.5||VGS= 4.5V, ID= 200mA| |||—|0.45|0.7||VGS= 2.5V, ID= 200mA| |||—|0.55|0.9||VGS= 1.8V, ID= 100mA| |||—|0.65|1.5||VGS= 1.5V, ID= 50mA| |||—|2|—||VGS= 1.2V, ID= 1mA| |Forward Transfer Admittance||Yfs||—|1.4|—|S|VDS= 3V, ID= 200mA| |Diode Forward Voltage<br>~~See~~|VSD<br>~~See~~|—<br>~~See~~|0.7<br>~~See~~|1.2<br>~~See~~|V<br>~~See~~|VGS= 0V, IS= 500mA<br>~~See~~| |**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~See~~||||||| |Input Capacitance<br>~~See~~|Ciss<br>~~See~~|—<br>~~See~~|37.1<br>~~See~~|—<br>~~See~~|pF<br>~~See~~|VDS= 10V, VGS= 0V,<br>f = 1.0MHz<br>~~See~~| |Output Capacitance<br>~~See~~|Coss<br>~~See~~|—<br>~~See~~|6.5<br>~~See~~|—<br>~~See~~||| |Reverse Transfer Capacitance<br>~~See~~|Crss<br>~~See~~|—<br>~~See~~|4.8<br>~~See~~|—<br>~~See~~||| |Gate Resistance<br>~~See~~|Rg<br>~~See~~|—<br>~~See~~|68<br>~~See~~|—<br>~~See~~|Ω<br>~~See~~|VDS= 0V, VGS= 0V<br>~~See~~| |Total Gate Charge<br>~~ES~~|Qg<br>~~ES~~|—<br>~~ES~~|0.5<br>~~ES~~|—<br>~~ES~~|nC<br>~~ES~~<br>~~ee~~|VGS= 4.5V, VDS= 10V,<br>ID= 250mA<br>~~ES~~<br>~~ee~~| |Gate-Source Charge<br>~~ES~~|Qgs<br>~~ES~~|—<br>~~ES~~|0.07<br>~~ES~~|—<br>~~ES~~||| |Gate-Drain Charge<br>~~ES~~<br>~~——_—~~|Qgd<br>~~ES~~|—<br>~~ES~~|0.1<br>~~ES~~|—<br>~~ES~~<br>~~ee~~||| |Turn-On DelayTime<br>~~ES~~<br>~~——_—~~|tD(ON)<br>~~ES~~|—<br>~~ES~~|4.06<br>~~ES~~|—<br>~~ES~~<br>~~ee~~|ns<br>~~ES~~<br>~~ee~~|VDD= 10V, VGS= 4.5V,<br>RL= 47Ω, RG= 10Ω,<br>ID= 200mA<br>~~ES~~<br>~~ee~~| |Turn-On Rise Time<br>~~——_—~~|tR|—|7.28|—<br>~~ee~~||| |Turn-Off DelayTime<br>~~——_—~~|tD(OFF)|—|13.74|—<br>~~ee~~||| |Turn-Off Fall Time<br>~~——_—~~|tF|—|10.54|—<br>~~ee~~||| Notes: 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. **==> picture [469 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0 1.5<br>VGS = 4.5V<br>rf VGS = 2.5V V = 5VDS<br>1.5 V GS = 2.0V<br>1.0<br>VGS = 1.8V<br>1.0<br>0.5<br>0.5 VGS = 1.5V T = 150°CA<br>T = 125°CA<br>T = 85°CA T = 25°CA<br>0 |——pT VGS = 1.2V 0 T = -55°CA<br>0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V) V , GATE SOURCE VOLTAGE (V)GS<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> 3 of 10 **www.diodes.com** DMC2400UV Document number: DS35537 Rev. 11 - 2 March 2020 © Diodes Incorporated **==> picture [519 x 714] intentionally omitted <==** **----- Start of picture text -----**<br> DMC2400UV<br>DIODES, TT<br>2.0 COLLET 0.8<br>V = 4.5VGS<br>CCAP EEE EE<br>1.6<br>0.6<br>CCAP EEE ee<br>T = 150°CA<br>1.2 VGS = 1.5V<br>C OP eaeee 0.4 T = 125°CA<br>T = 85°CA<br>0.8<br>T = 25°CA<br>VGS = 1.8V VGS = 2.5V 0.2 T = -55°CA<br>0.4 e———— VGS en = 5.0V V GS = 4.5V<br>0 aHee 0 =<br>0 0.4 0.8 Lt 1.2 | 1.6 oie 2 0 0.4 0.8 1.2 1.6<br>ID, DRAIN-SOURCE CURRENT (A) I , DRAIN CURRENT (A)D<br>Fig. 3 Typical On-Resistance Fig. 4 Typical Drain-Source On-Resistance<br>vs. Drain Current and Gate Voltage vs. Drain Current and Temperature<br>1.6 0.8<br>VGS = 4.5V<br>1.4 ID = 1.0A<br>of<br>0.6<br>VVGSGS = 2.5.V= 2.5V<br>ID = 500mA<br>1.2<br>tilly<br>0.4 VGS = 2.5V<br>ID = 500mA<br>1.0<br>BEEZ Anie<br>0.2 V GS = 4.5V<br>0.8 ID = 1.0A<br>LLL<br>0.6 0<br>-50 PELE -25 0 25 50 EEL 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ((°C)癈 ) TJ, JUNCTION TEMPERATURE ( 癈°C )<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>1.2 1.6<br>1.0<br>1.2 T = 25°CA<br>0.8 I = 1mAD<br>I = 250µAD<br>0.6 0.8<br>0.4<br>0.4<br>0.2<br>0 0<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2<br>T , AMBIENT TEMPERATURE (°C)A V , SOURCE-DRAIN VOLTAGE (V)SD<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>DS(ON)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> 4 of 10 **www.diodes.com** DMC2400UV Document number: DS35537 Rev. 11 - 2 March 2020 © Diodes Incorporated **DMC2400UV** ## INCORPORATE D® **==> picture [472 x 443] intentionally omitted <==** **----- Start of picture text -----**<br> 60 1,000<br>T = 150°CA<br>50 f = 1MHz<br>100<br>40 Ne__| a——=a T = 125°CA<br>ee Ee<br>Ciss<br>30 10 J |_| _}| _| _} _| |__| __4<br>—————<br>rs es a ee T = 85°CA rs|<br>20 a ee |<br>1 T = 25°CA<br>kr er ee |<br>10 \ —_ Coss pe eNTAo ee T = -55°CA [<br>———— i<br>0 Crss 0.1<br>| Sd Fee EEL<br>0 5 10 15 20 2 4 6 8 10 12 14 16 18 20<br>VDS, DRAIN-SOURCE VOLTAGE (V) V , DRAIN-SOURCE VOLTAGE (V) DS<br>Fig. 9 Typical Capacitance Fig. 10 Typical Drain-Source Leakage Current<br>vs. Drain-Source Voltage<br>5 10 Seanaes OeUl Ea 111OG nen REAROO GG OOEEL OOEE<br>a a Oa 0 Oe 0<br>P W = 100100µs祍 P W = 10µs<br>HHeh al |<br>4 ctttitt Neha?<br>1 R DS(on)<br>IVD = 250mADS = 10V CCT"[aeee Limited DC TORN NNTTENN ST<br>3 ee ee ee || PW = 10s NAWPP NSESESIIDNONTONTTRHBB<br>0.1 Pea PW = 1s AAANINNall<br>PW = 100ms<br>a A SNe! a.<br>2 eea 2 PW = 10ms NYNNN<br>P W = 1ms<br>0.01<br>1 ee Oe 0ee<br>T = 150°C aee<br>J(max) aee<br>T, = 25°C a<br>0 0.001<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.01 0.1 1 10 100<br>Qg, TOTAL GATE CHARGE (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 11 Gate-Charge Characteristics Fig. 12 SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE LEAKAGE CURRENT (nA)<br>IDSS<br>GS<br>, GATE-SOURCE VOLTAGE (V)<br>V<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> 5 of 10 **www.diodes.com** DMC2400UV Document number: DS35537 Rev. 11 - 2 March 2020 © Diodes Incorporated **DMC2400UV** ## **Electrical Characteristics** - **Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.) |**Electrical Characteristics**-**Q2 P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**-**Q2 P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**-**Q2 P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**-**Q2 P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**-**Q2 P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**-**Q2 P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---| ||||||| |**Characteristic**|**Symbol**|**Min**|**Typ **<br>**Max**|**Max**<br>**Unit**|**Test Condition**| |**OFF CHARACTERISTICS(Note 8) **<br>~~——_———————~~|||||| |Drain-Source Breakdown Voltage<br>~~——_———————~~|BVDSS<br>~~——_———————~~|-20<br>~~——_———————~~|—<br>~~——_———————~~|—<br>V<br>~~——_———————~~|VGS= 0V,ID= -1mA<br>~~——_———————~~| |Zero Gate Voltage Drain Current TJ= +25°C<br>~~——_———————~~|IDSS<br>~~——_———————~~|—<br>~~——_———————~~|—<br>-100<br>~~——_———————~~|-100<br>nA<br>~~——_———————~~|VDS= -20V,VGS= 0V<br>~~——_———————~~| |Gate-Source Leakage<br>~~a~~|IGSS<br>~~a~~|—<br>~~a~~|—<br>±1.0<br>~~a~~|±1.0<br>A<br>±5.0<br>~~a~~|VGS= ±5V,VDS= 0V<br>VGS= ±8V,VDS= 0V<br>~~a~~| |||—<br>~~a~~|—<br>±5.0<br>~~a~~||| |**ON CHARACTERISTICS(Note 8) **|||||| |Gate Threshold Voltage|VGS(TH)|-0.5<br>~~ES~~|—<br>-1.0<br>~~ES~~|-1.0<br>V<br>~~ES~~|VDS= VGS,ID= -250μA<br>~~Be~~| |Static Drain-Source On-Resistance<br>~~|~~<br>~~a~~|RDS(ON)<br>~~|~~<br>~~a~~|—<br>~~|~~<br>~~ES~~|0.67<br>0.97<br>~~|~~<br>~~ES~~|0.97<br>Ω<br>1.0<br>1.5<br>2.0<br>3.0<br>—<br>~~——~~<br>~~|~~<br>~~ES~~<br>~~a~~|VGS= -5V,ID= -100mA<br>VGS= -4.5V,ID= -100mA<br>VGS= -2.5V,ID= -80mA<br>VGS= -1.8V,ID= -40mA<br>VGS= -1.5V,ID= -30mA<br>VGS= -1.2V,ID= -1mA<br>~~|~~<br>~~Be~~<br>~~a~~| |||—<br>~~——~~<br>~~|~~<br>~~ES~~|0.7<br>1.0<br>~~——~~<br>~~|~~<br>~~ES~~||| |||—<br>~~——~~<br>~~|~~<br>~~ES~~|0.9<br>1.5<br>~~——~~<br>~~|~~<br>~~ES~~||| |||—<br>~~|~~<br>~~ES~~|1.2<br>2.0<br>~~|~~<br>~~ES~~||| |||—<br>~~|~~<br>~~ES~~|1.5<br>3.0<br>~~|~~<br>~~ES~~||| |||—<br>~~|~~<br>~~ES~~<br>~~a~~|5<br>~~|~~<br>~~ES~~<br>~~a~~||| |Forward Transfer Admittance<br>~~a~~||Yfs|<br>~~a~~|—<br>~~ES~~<br>~~a~~|0.7<br>~~ES~~<br>~~a~~|—<br>S<br>~~ES ~~<br>~~a~~|VDS= -3V,ID= -100mA<br> ~~Be~~<br>~~a~~| |Diode Forward Voltage<br>~~a~~|VSD<br>~~a~~|—<br>~~a~~|-0.75<br>-1.2<br>~~a~~|-1.2<br>V<br>~~a~~|VGS= 0V,IS= -330mA<br>~~a~~| |**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~CC~~|||||| |Input Capacitance<br>~~Ss~~|Ciss<br>~~Ss~~|—<br>~~Ss~~|46.1<br>~~Ss~~|—<br>pF<br>—<br>—<br>~~Ss~~|VDS= -10V, VGS= 0V,<br>f = 1.0MHz<br>~~Ss~~| |Output Capacitance<br>~~Ss~~|Coss<br>~~Ss~~|—<br>~~Ss~~|7.2<br>~~Ss~~||| |Reverse Transfer Capacitance<br>~~Ss~~|Crss<br>~~Ss~~|—<br>~~Ss~~|4.9<br>~~Ss~~||| |Gate Resistance<br>~~Ss~~|Rg<br>~~Ss~~<br>~~ee~~|—<br>~~Ss~~<br>~~ee~~|14.3<br>~~Ss~~<br>~~ee~~|—<br>Ω<br>~~Ss~~<br>~~ee~~|VDS= 0V,VGS= 0V<br>~~Ss~~| |Total Gate Charge(VGS= -4.5V)<br>~~Ss~~<br>~~ee~~|Qg<br>~~Ss~~<br>~~ee~~<br>~~ee~~|—<br>~~Ss~~<br>~~ee~~<br>~~ee~~|0.5<br>~~Ss~~<br>~~ee~~<br>~~ee~~|—<br>nC<br>—<br>—<br>—<br>~~Ss~~<br>~~ee~~<br>~~ee~~<br>~~——————~~<br>~~ee~~|VDS= -10V, ID= -250mA<br>~~Ss~~<br>~~ee~~<br>~~ee~~| |Total Gate Charge(VGS= -10V)<br>~~ee~~|Qg<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|0.85<br>~~ee~~<br>~~ee~~||| |Gate-Source Charge<br>~~ee~~|Qgs<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|0.09<br>~~ee~~<br>~~ee~~||| |Gate-Drain Charge<br>~~ee~~<br>~~——————~~<br>~~——————~~|Qgd<br>~~ee~~<br>~~ee~~<br>~~——————~~|—<br>~~ee~~<br>~~ee~~<br>~~——————~~|0.09<br>~~ee~~<br>~~ee~~<br>~~——————~~||| |Turn-On DelayTime<br>~~——————~~<br>~~——————~~|tD(ON)<br>~~ee~~<br>~~——————~~|—<br>~~ee ~~<br>~~——————~~|8.5<br> ~~ee~~<br>~~——————~~|—<br>ns<br>—<br>—<br>—<br>~~ee~~<br>~~——————~~<br>~~ee~~|VDD= -3V, VGS= -2.5V,<br>RL= 300Ω, RG= 25Ω,<br>ID= -100mA<br>~~ee~~| |Turn-On Rise Time<br>~~——————~~|tR|—|4.3||| |Turn-Off DelayTime<br>~~——————~~|tD(OFF)|—|20.2||| |Turn-Off Fall Time<br>~~——————~~|tF|—|19.2||| **==> picture [208 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>0.8<br>0.6<br>0.4<br>far<br>0.2 | eee<br>0 |<br>0 1 2 3 4 5<br>-VDS, DRAIN -SOURCE VOLTAGE (V)<br>Fig. 13 Typical Output Characteristics<br>, DRAIN CURRENT (A)<br>-I<br>D<br>**----- End of picture text -----**<br> **==> picture [210 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>VDS = -5V<br>0.8<br>0.6<br>0.4<br>LL<br>0.2<br>TA = 125C<br>fo<br>0 Se)<br>0 1 2 3 4<br>-VGS, GATE SOURCE VOLTAGE(V)<br>Fig. 14 Typical Transfer Characteristics<br>D<br>, DRAIN CURRENT (A)<br>-I<br>**----- End of picture text -----**<br> 6 of 10 **www.diodes.com** DMC2400UV Document number: DS35537 Rev. 11 - 2 March 2020 © Diodes Incorporated **DMC2400UV** **==> picture [481 x 659] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0<br>VGS = -4.5V<br>1.81.6 -—t+————+--+} | Spa=ePyEe<br>1.4 Ff ee ell<br>V GS = -1.8V<br>1.2 er_ ee a a TA = 150 癈°C el<br>1.0 VGS = -2.5V<br>ee ee NH Ne<br>0.8 aee Cs eePoreee<br>0.6 V GS = -4.5V eo el<br>om ee<br>0.4<br>—a a faalll<br>0.2 a<br>a<br>0 E =| E SE EEE o t<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.01 0.1 1 10<br>-ID, DRAIN SOURCE CURRENT (A) -ID, DRAIN SOURCE CURRENT (A)<br>Fig. 15 Typical On-Resistance vs. Fig. 16 Typical On-Resistance vs.<br>Drain Current and Gate Voltage Drain Current and Temperature<br>1.6 2.0<br>Ip = - 300mA<br>1.4<br>- 430mA 1.5<br>res 4.5V “S -a<br>1.2 y, [a] [Veg] = -1.8V<br>1.0<br>1.0<br>4A ea<br>a Vag = - 4 . 5V<br>0.5 E<br>0.8 ,<br>0.6 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 17 On-Resistance Variation with Temperature Fig. 18 On-Resistance vs.Temperature<br>1.0 1.0<br>0.8 II D = 300= -300µAA 0.8<br>0.6 IIDD = 250= -250µAA 0.6 T A = 25C<br>0.4 0.4<br>0.2 0.2 J<br>0 0<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>TJ, JUNCTION TEMPERATURE (C) -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 19 Gate Threshold Voltage vs. Junction TemperatureFig. 19 Gate Threshold Variation vs. Ambient Temperature Fig. 20 Diode Forward Voltage vs. Current<br>DS(ON)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>)<br>,DRAIN-SOURCE ON-RESISTANCE(<br>R<br>GS(th)<br>, GATE THRESHOLD VOLTAGE (V)<br>-V<br>)<br>, DRAIN-SOURCE ON-RESISTANCE(<br>R<br>DS(ON)<br>, SOURCE CURRENT (A)<br>-I<br>S<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>**----- End of picture text -----**<br> 7 of 10 **www.diodes.com** DMC2400UV Document number: DS35537 Rev. 11 - 2 March 2020 © Diodes Incorporated **DMC2400UV** **==> picture [475 x 652] intentionally omitted <==** **----- Start of picture text -----**<br> 80 1,000<br>f = 1MHz<br>=== T A = 150C<br>60 — [| ft 100 P| E ee|E| fT TA = 125C —_<br>=] SSS<br>Se<br>Se ee<br>40 Pf— C iss 10 ——————————Sseee TA = 85C<br>TA = 25C<br>20 , ff 1 eaeaes<br>FJ eT |<br>C oss<br>0 oo Crss 0.1 |<br>FEEL EEL<br>0 5 10 15 20 0 4 8 12 16 20<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -VDS, DRAIN-SOURCE VOLTAGE(V)<br>Fig. 21 Typical Junction Capacitance Fig. 22 Typical Drain-Source Leakage Current vs. Voltage<br>8 10<br>7 J a 0 P W = 100100祍µs PW = 10µs in<br>6 yl IVD = -250mADS = -10V foVA | 1 anilSSPII RDS(on FLOAT ) NUTINIFi<br>Limited<br>5 / FSEEHE | EERE DC RST<br>P W = 10s<br>4 TTT TIAL| TA 0.1 =r[| TT gd PW SAIN = NS 1s SOE ENTETTHBB<br>7 VA aSSSSass oeaasSeaare PW = 100ms SARYENSEihSNS| Ca<br>3 VA P W = 10ms as Seesiai<br>PW = 1ms<br>2 CO) 0.01 LT let Ty TT TT ACCT<br>1 p~ Ting Pe EH<br>0 AGG 0.001 Tasers PTTCCAMELLIECC rTEA<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.01 0.1 1 10 100<br>Qg, TOTAL GATE CHARGE (nC) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 23 Gate-Charge Characteristics Fig. 24 SOA, Safe Operation Area<br>1<br>Smee D = 0.7<br>D = 0.5 EEN TT<br>bo ne ou ee<br>iene eae te a<br>D = 0.3<br>FTTH eee TTT PITTI PT PTT<br>0.1<br>EEESe D = 0.1 EH eresNearHf D = 0.9 ELLM ELIT E ELTEE<br>D = 0.05<br>CSa ae ee re<br>ct D = 0.02 )aoZ2 R R JA JA (t) = r(t) = 275 癈°C/W* R /W JA al<br>me ETM LEME LEIA TMI Ill<br>0.01 D = 0.01 ie IIE FEMI EE TLE |<br>EA P(pk) EHH<br>TT HE EE t 1 EEE<br>bOI D = 0.005 THIET ae t 2 [TTT<br>Pee TJ - TA = P * RJA(t) Hot<br>D = Single Pulse Duty Cycle, D = t 1 /t 2<br>0.001 rum COMMENT il<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 25 Transient Thermal Response<br>, JUNCTION CAPACITANCE (pF)<br>C<br>T<br>GATE-SOURCE VOLTAGE (V)<br>GS,<br>-V<br>, GATE-SOURCE VOLTAGE (V)<br>V<br>GS<br>r(t), TRANSIENT THERMAL RESISTANCE<br>, DRAIN CURRENT (A)<br>D<br>-I<br>DSS<br>, LEAKAGE CURRENT (nA)<br>-I<br>**----- End of picture text -----**<br> 8 of 10 **www.diodes.com** DMC2400UV Document number: DS35537 Rev. 11 - 2 March 2020 © Diodes Incorporated **DMC2400UV** ## **Package Outline Dimensions** Please see http://www.diodes.com/package-outlines.html for the latest version. ## **SOT563** **==> picture [405 x 219] intentionally omitted <==** **----- Start of picture text -----**<br> b<br>a a<br>pie i SOT563<br>E E1 Dim Min Max Typ<br>A 0.55 0.60 0.60<br>b 0.15 0.30 0.20<br>c 0.10 0.18 0.11<br>L D 1.50 1.70 1.60<br>R.01 E 1.55 1.70 1.60<br>e E1 1.10 1.25 1.20<br>c<br>e -- -- 0.50<br>e1 e1 0.90 1.10 1.00<br>L 0.10 0.30 0.20<br>D a 8° 9° 7°<br>All Dimensions in mm<br>A<br>a<br>a<br>**----- End of picture text -----**<br> ## **Suggested Pad Layout** Please see http://www.diodes.com/package-outlines.html for the latest version. **SOT563** **==> picture [355 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> C X<br>Dimensions Value (in mm)<br>C 0.500<br>C1 1.270<br>Y G 0.600<br>X 0.300<br>X1 1.300<br>O00<br>Y 0.670<br>Y1 G C1<br>Y1 1.940<br>X1<br>“O00 ==<br>**----- End of picture text -----**<br> 9 of 10 **www.diodes.com** DMC2400UV Document number: DS35537 Rev. 11 - 2 March 2020 © Diodes Incorporated **DMC2400UV** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. ## **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: - A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. - B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2020, Diodes Incorporated **www.diodes.com** 10 of 10 **www.diodes.com** DMC2400UV Document number: DS35537 Rev. 11 - 2 March 2020 © Diodes Incorporated
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