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DMC21D1UDA-7B
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 455 mA, 455 mA, 0.99 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: X2-DFN0806
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 300mW
- Power Dissipation P Channel: 300mW
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 455mA
- Continuous Drain Current Id P Channel: 455mA
- Drain Source On State Resistance N Channel: 0.99ohm
- Drain Source On State Resistance P Channel: 1.9ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.08 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
-free Green **DMC21D1UDA COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET** ## **Product Summary** |**Device**|**BVDSS**|**RDS(ON) max**|**ID max**<br>**TA = +25°C**| |---|---|---|---| |Q1|20V|0.99Ω@VGS= 4.5V|455mA| |||1.2Ω@VGS= 2.5V|414mA| |||1.8Ω@VGS= 1.8V|338mA| |||2.4Ω @ VGS= 1.5V|292mA| |Q2|-20V|1.9Ω@VGS= -4.5V|-328mA| |||2.4Ω@VGS= -2.5V|-292mA| |||3.4Ω@VGS= -1.8V|-245mA| |||5Ω@VGS= -1.5V|-202mA| ## **Features and Benefits** - Low On-Resistance - Very low Gate Threshold Voltage, 1.0V max - Low Input Capacitance - Fast Switching Speed - Ultra-Small Surface Mount Package 0.8mm x 0.6mm - **Totally Lead-Free & Fully RoHS compliant (Note 1 & 2)** - **Halogen and Antimony Free. “Green” Device (Note 3 )** ## **Description and Applications** This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ## **Mechanical Data** - Case: X2-DFN0806-6 - Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - General Purpose Interfacing Switch - Power Management Functions - Analog Switch - Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 - Weight: 0.027 grams (Approximate) **==> picture [59 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> ESD PROTECTED<br>**----- End of picture text -----**<br> **==> picture [21 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> Pin 1<br>**----- End of picture text -----**<br> Top View Bottom View **==> picture [282 x 123] intentionally omitted <==** **----- Start of picture text -----**<br> D1 G2 S2<br>D1 D2<br>G1 G2<br>Gate Protection Diode S1 Gate Protection Diode S2<br>S1 G1 D2<br>Device Symbol Pin Configuration<br>Top View<br>**----- End of picture text -----**<br> ## **Ordering Information** (Note 4) |**Ordering Informationg Information Information** (Note 4)||| |---|---|---| |**Part Number**|**Case**|**Packaging**| |DMC21D1UDA-7B|X2-DFN0806-6|10,000/Tape & Reel| - Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. ## **Marking Information** **==> picture [14 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> B3<br>**----- End of picture text -----**<br> B3 = Product Type Marking Code Top View 1 of 10 **www.diodes.com** DMC21D1UDA Document number: DS39203 Rev. 1 - 2 May 2017 © Diodes Incorporated **DMC21D1UDA** ## **Maximum Ratings Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.) ||||||| |---|---|---|---|---|---| |**Characteristic**|||**Symbol**|**Value**|**Unit**| |Drain-Source Voltage|||VDSS|20|V| |Gate-Source Voltage|||VGSS|±8|V| |Continuous Drain Current (Note 5)|Steady<br>State|TA= +25°C<br>TA= +70C|ID|455<br>365|mA| |Pulsed Drain Current(Note 6)|||IDM|1500|mA| ## **Maximum Ratings Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratingsgss** **Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---| ||||||| |**Characteristic**|||**Symbol**|**Value**|**Unit**| |Drain-Source Voltage|||VDSS|-20|V| |Gate-Source Voltage|||VGSS|±8|V| |Continuous Drain Current (Note 5) VGS= -4.5V|Steady<br>State|TA= +25C<br>TA= +70C|ID|-328<br>-262|mA| |Pulsed Drain Current(Note 6)|||IDM|-1000|mA| ## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) |**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||| |---|---|---|---|---| |**Characteristic**||**Symbol**|**Value**|**Unit**| |Total Power Dissipation(Note 5)||PD|300|mW| |Thermal Resistance,Junction to Ambient(Note 5)|SteadyState|RθJA|419|°C/W| |Operating and Storage Temperature Range||TJ, TSTG|-55 to +150|°C| Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%. ## **Electrical Characteristics Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.) |**Electrical Characteristics** **Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---|---| |||||||| |**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**| |**OFF CHARACTERISTICS(Note 7) **||||||| |Drain-Source Breakdown Voltage|BVDSS|20|—|—|V|VGS= 0V,ID= 250μA| |Zero Gate Voltage Drain Current@TC= +25°C|= +25°C<br>IDSS|—|—|1|μA|VDS= 16V,VGS= 0V| |Gate-Source Leakage|IGSS|—|—|±10|μA|VGS= ±5V,VDS= 0V| |**ON CHARACTERISTICS(Note 7) **||||||| |Gate Threshold Voltage|VGS(TH)|0.4|0.75|1.0|V|VDS= VGS,ID= 250μA<br>~~LS~~| |Static Drain-Source On-Resistance<br>~~ES~~|RDS(ON)<br>~~ES~~|—<br>~~ES~~|0.5<br>~~ES~~|0.99<br>~~ES~~|Ω<br>~~ES~~|VGS= 4.5V,ID= 100mA<br>~~ES~~<br>~~LS~~| |||—<br>~~ES~~|0.6<br>~~ES~~|1.2<br>~~ES~~||VGS= 2.5V,ID= 50mA<br>~~ES~~<br>~~LS~~| |||—<br>~~ES~~|0.8<br>~~ES~~|1.8<br>~~ES~~||VGS= 1.8V,ID= 20mA<br>~~ES~~<br>~~LS~~| |||—<br>~~ES~~|1.0<br>~~ES~~|2.4<br>~~ES~~||VGS= 1.5V,ID= 10mA<br>~~ES~~<br>~~LS~~| |Diode Forward Voltage<br>~~ES~~|VSD<br>~~ES~~|—<br>~~ES~~|0.6<br>~~ES~~|1.0<br>~~ES~~|V<br>~~ES~~|VGS= 0V,IS= 10mA<br>~~ES~~<br>~~LS~~| |**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~LS~~||||||| |Input Capacitance<br>~~———~~|Ciss<br>~~———~~|—<br>~~———~~|31<br>~~———~~|—<br>~~———~~|pF<br>~~———~~|VDS= 15V, VGS= 0V,<br>f = 1.0MHz<br>~~———~~| |Output Capacitance<br>~~———~~|Coss<br>~~———~~|—<br>~~———~~|3.6<br>~~———~~|—<br>~~———~~|pF<br>~~———~~|| |Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~———~~|—<br>~~———~~|2.6<br>~~———~~|—<br>~~———~~|pF<br>~~———~~|| |Gate Resistance<br>~~———~~|RG<br>~~———~~|—<br>~~———~~|113<br>~~———~~|—<br>~~———~~|Ω<br>~~———~~|VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~———~~| |Total Gate Charge|Qg|—|0.41|—|nC|VGS= 4.5V, VDS= 10V,<br>ID= 250mA<br>~~ee~~| |Gate-Source Charge|Qgs|—|0.06|—|nC|| |Gate-Drain Charge<br>~~———~~|Qgd|—|0.05|—<br>~~ee~~|nC<br>~~ee~~|| |Turn-On DelayTime<br>~~———~~|tD(ON)|—|4.5|—<br>~~ee~~|ns<br>~~ee~~|VDD= 15V, VGS= 4.5V,<br>RG= 2Ω, ID= 200mA<br>~~ee~~| |Turn-On Rise Time<br>~~———~~|tR|—|3.4|—<br>~~ee~~|ns<br>~~ee~~|| |Turn-Off DelayTime<br>~~———~~|tD(OFF)|—|24|—<br>~~ee~~|ns<br>~~ee~~|| |Turn-Off Fall Time<br>~~———~~|tF|—|12|—<br>~~ee~~|ns<br>~~ee~~|| 2 of 10 **www.diodes.com** DMC21D1UDA Document number: DS39203 Rev. 1 - 2 May 2017 © Diodes Incorporated **DMC21D1UDA** **Electrical Characteristics Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.) |**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~|**Min**<br>~~ee~~|**Typ **<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|**Test Condition**<br>~~ee~~| |---|---|---|---|---|---|---| |**OFF CHARACTERISTICS(Note 7) **<br>~~ee~~||||||| |Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|-20<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V,ID= -250μA<br>~~ee~~| |Zero Gate Voltage Drain Current@TC= +25°C<br>~~ee~~|= +25°C<br>IDSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|-1<br>~~ee~~|μA<br>~~ee~~|VDS= -16V,VGS= 0V<br>~~ee~~| |Gate-Source Leakage<br>~~ee~~|IGSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|±10<br>~~ee~~|μA<br>~~ee~~|VGS= ±5V,VDS= 0V<br>~~ee~~| |**ON CHARACTERISTICS(Note 7) **||||||| |Gate Threshold Voltage<br>~~Cf~~|VGS(TH)<br>~~Cf~~|-0.4<br>~~Cf~~|-0.7<br>~~Cf~~|-1.0<br>~~Cf~~|V<br>~~Cf~~|VDS= VGS,ID= -250μA<br>~~Cf~~| |Static Drain-Source On-Resistance<br>~~Ee~~|RDS(ON)<br>~~Ee~~|—<br>~~Ee~~|1.2<br>~~Ee~~|1.9<br>~~Ee~~|Ω<br>~~Ee~~<br>~~ff~~|VGS= -4.5V,ID= -100mA<br>~~Ee~~| |||—<br>~~Ee~~|1.6<br>~~Ee~~|2.4<br>~~Ee~~||VGS= -2.5V,ID= -50mA<br>~~Ee~~| |||—<br>~~Ee~~|1.9<br>~~Ee~~|3.4<br>~~Ee~~||VGS= -1.8V,ID= -20mA<br>~~Ee~~| |||—<br>~~Ee~~<br>~~a ~~|2.4<br>~~Ee~~<br> ~~a~~<br>~~ff~~|5<br>~~Ee~~<br>~~ff~~||VGS= -1.5V,ID= -10mA<br>~~Ee~~<br>~~Pr~~| |Diode Forward Voltage<br>~~Cf~~|VSD<br>~~Cf~~|—<br>~~Cf~~|-0.7<br>~~Cf~~<br>~~ff~~|-1.1<br>~~Cf~~<br>~~ff~~|V<br>~~Cf~~<br>~~ff~~|VGS= 0V,IS= -10mA<br>~~Cf~~| |**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~ff~~||||||| |Input Capacitance<br>~~ee~~|Ciss<br>~~ee~~|—<br>~~ee~~|28.5<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~|VDS= -15V, VGS= 0V,<br>f = 1.0MHz<br>~~ee~~| |Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|—<br>~~ee~~|3.9<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~|| |Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|—<br>~~ee~~|2.4<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~|| |Gate Resistance<br>~~———~~|RG|—<br>~~Ey~~|398<br>~~Ey~~|—<br>~~Ey~~|Ω<br>~~Ey~~|VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~Ey~~| |Total Gate Charge<br>~~———~~|Qg|—<br>~~Ey~~|0.4<br>~~Ey~~|—<br>~~Ey~~|nC<br>~~Ey~~|VGS= -4.5V, VDS= -10V,<br>ID= -250mA<br>~~Ey~~<br>~~ee~~| |Gate-Source Charge<br>~~———~~|Qgs|—<br>~~Ey~~|0.07<br>~~Ey~~|—<br>~~Ey~~|nC<br>~~Ey~~|| |Gate-Drain Charge<br>~~———~~<br>~~—<——~~|Qgd|—<br>~~Ey~~|0.07<br>~~Ey~~|—<br>~~Ey~~<br>~~ee~~|nC<br>~~Ey~~<br>~~ee~~|| |Turn-On DelayTime<br>~~———~~<br>~~—<——~~|tD(ON)|—<br>~~Ey~~|5.2<br>~~Ey~~|—<br>~~Ey~~<br>~~ee~~|ns<br>~~Ey~~<br>~~ee~~|VDD= -15V, VGS= -4.5V,<br>RG= 2Ω, ID= -200mA<br>~~Ey~~<br>~~ee~~| |Turn-On Rise Time<br>~~———~~<br>~~—<——~~|tR|—<br>~~Ey~~|4.3<br>~~Ey~~|—<br>~~Ey~~<br>~~ee~~|ns<br>~~Ey~~<br>~~ee~~|| |Turn-Off DelayTime<br>~~———~~<br>~~—<——~~|tD(OFF)|—<br>~~Ey~~|31<br>~~Ey~~|—<br>~~Ey~~<br>~~ee~~|ns<br>~~Ey~~<br>~~ee~~|| |Turn-Off Fall Time<br>~~—<——~~|tF|—|15.4|—<br>~~ee~~|ns<br>~~ee~~|| Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 3 of 10 **www.diodes.com** DMC21D1UDA Document number: DS39203 Rev. 1 - 2 May 2017 © Diodes Incorporated **DMC21D1UDA** ## **Typical Characteristics - N-CHANNEL** **==> picture [508 x 658] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0 1<br>0.8 VGSVGS = 3.0VVGS = 2.5V= 2.0V 0.8 VDS = 2.0V TTJ = 85JT = 25J = -55 ℃℃ ℃ TTJJ = 150 = 125 ℃℃<br>VGS = 4.0V<br>0.6 a, VGS = 4.5V —] VGS = 1.5V 0.6 Le A<br>0.4 , ee 0.4 e eee<br>0.2 VGS = 1.2V 0.2<br>Po of<br>VGS = 0.9V VGS = 1.0V<br>0.0 | 0 ~~ f.<br>0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>2 5<br>1.8 | VGS = 1.2V Pt | tT | ft<br>1.6 4<br>1.4<br>1.2 A VGS = 1.5V 3 ELECT<br>1 Hoe EE VGS = 1.8V<br>0.8 VGS = 2.5V 2<br>aro ty LA<br>0.6<br>0.4 VGS = 4.5V 1 ID = 100mA<br>0.2 S S R URa aEe<br>0 0<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 1 2 3 4 5 6 7 8<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current and Figure 4. Typical Transfer Characteristic<br>Gate Voltage<br>1.20 2<br>VGS = 4.5V VGS = 4.5V, ID = 100mA<br>1.00 VGS = 2.5V, ID = 50mA<br>TJ = 150 ℃ 1.5 VGS = 1.8V, ID = 20mA<br>0.80 TJ = 125 ℃ VGS = 1.5V, ID = 10mA<br>0.60 TJ = 85 ℃ 1 VGS = 1.2V, ID = 1mA<br>TJ = 25 ℃<br>0.40<br>TJ = -55 ℃ 0.5 = aa<br>0.20<br>0.00 0 LLL EERE<br>0 0.2 0.4 0.6 0.8 1 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs. Drain Current and Figure 6. On-Resistance Variation with Temperature<br>Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) )<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>RDS(ON) RDS(ON)<br>)<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>DS(ON) R<br>R<br>**----- End of picture text -----**<br> 4 of 10 **www.diodes.com** DMC21D1UDA Document number: DS39203 Rev. 1 - 2 May 2017 © Diodes Incorporated **DMC21D1UDA** ## **Typical Characteristics - N-CHANNEL** (Cont.) **==> picture [500 x 646] intentionally omitted <==** **----- Start of picture text -----**<br> 2 1<br>1.8<br>VGS = 1.2V, ID = 1mA<br>1.6 Sa.F<br>1.4 VGS = 1.5V, ID = 10mA 0.8 ID = 1mA<br>1.2 VGS = 1.8V, ID = 20mA<br>1 Saagenne VGS = 2.5V, ID = 50mA 0.6 - ID = 250μA aa<br>0.8 be TS SS<br>0.6<br>68 See 0.4 ><br>0.4 VGS = 4.5V, ID = 100mA<br>0.2 an<br>0 a n 0.2 LEELLLL<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ ) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Temperature Figure 8. Gate Threshold Variation vs. Junction<br>Temperature<br>1 100<br>0.9 VGS = 0V | | —— f = 1MHz<br>0.8 e e || aa =e Ciss<br>0.7 es || — __<br>0.60.5 eeeee ||| 10 pf}VERE [fp}] tf Tf<br>0.4 TA = 85 [o] C Coss<br>0.3 i TA = 125 [o] C K b<br>TA = 25 [o] C — a<br>0.2 is |) ae S S|<br>TA = 150 [o] C ff TL. eee Crss<br>0.1 TA = -55 [o] C<br>DY<br>0 1<br>0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 12 14 16 18 20<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>8 10<br>RDS(ON) Limited<br>7 PW = 100µs<br>6 y, 1 ea<br>SeSNS<br>Sena Sines Ol<br>5<br>PW = 1ms<br>4 0.1<br>PW = 10ms<br>3 PW<br>VDS = 10V, ID = 250mA PW = 1s<br>2 0.01<br>TJ(Max) = 150 ℃ TC = 25 ℃ PW = 10s<br>1 Single Pulse DC<br>DUT on 1*MRP Board<br>VGS = 4.5V<br>0 /| | | tt ft ff 0.001 ett hh<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.1 1 10 100<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge Fiugre 12. SOA, Safe Operation Area<br>)(<br>, DRAIN-SOURCE ON-RESISTANCE , GATE THRESHOLD VOLTAGE (V)<br>DS(ON) GS(TH)<br>R V<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> 5 of 10 **www.diodes.com** DMC21D1UDA Document number: DS39203 Rev. 1 - 2 May 2017 © Diodes Incorporated **DMC21D1UDA** ## **Typical Characteristics - P-CHANNEL** **==> picture [510 x 651] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0 0.8<br>VGS = -4.5V VDS = -2.0V<br>VGS = -4.0V<br>85 ℃<br>0.8 VGS = -3.0V<br>0.6<br>VGS = -2.5V 25 ℃ 150 ℃<br>125 ℃<br>-55 ℃<br>0.6<br>0.4<br>VGS = -2.0V<br>0.4<br>ee }<br>VGS = -1.5V 0.2<br>0.2 Ame en Cone<br>VGS = -0.9V VGS = -1.0V VGS = -1.2V<br>0.0 |e 0 eee<br>0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 13. Typical Output Characteristic Figure 14. Typical Transfer Characteristic<br>4.55 VGS = -1.2V Ft 5<br>4 VGS = -1.5V 4<br>3.5 a<br>3 3<br>VGS = -1.8V<br>2.5<br>2 VGS = -2.5V 2 ID = -100mA<br>1.5 =<br>1 | a 1<br>VGS = -4.5V<br>0.5<br>a<br>0 0<br>0 0.1 0.2 0.3 0.4 0.5 0 1 2 3 4 5 6 7 8<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 15. Typical On-Resistance vs. Drain Current and Figure 16. Typical Transfer Characteristic<br>Gate Voltage<br>2.50 2<br>VGS = -4.5V 150 ℃ VGS = -4.5V, ID = -100mA<br>2.00 VGS = -2.5V, ID = -50mA<br>1.5<br>VGS = -1.8V, ID = -20mA<br>1.50 85 ℃ VGS = -1.5V, ID = -10mA =<br>125 ℃ 1<br>VGS = -1.2V, ID = -1mA<br>25 ℃<br>1.00<br>-55 ℃<br>0.5 a<br>0.50<br>FT ELLLEL<br>0.00 0<br>0 0.2 0.4 0.6 0.8 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 17. Typical On-Resistance vs. Drain Current and Figure 18. On-Resistance Variation with Temperature<br>Temperature<br>, DRAIN CURRENT (A)<br>ID , DRAIN CURRENT (A)ID<br>)<br>)(<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>DS(ON)<br>R<br>)(<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>**----- End of picture text -----**<br> 6 of 10 **www.diodes.com** DMC21D1UDA Document number: DS39203 Rev. 1 - 2 May 2017 © Diodes Incorporated **DMC21D1UDA** ## **Typical Characteristics - P-CHANNEL** (Cont.) **==> picture [501 x 644] intentionally omitted <==** **----- Start of picture text -----**<br> 5 1<br>4.5<br>VGS = -1.2V, ID = -1mA<br>4 4 VGS = -1.5V, ID = -10mA 0.8<br>3.5 VGS = -1.8V, ID = -20mA ID = -1mA<br>3<br>2.5 — ye 0.6<br>| \ Ue<br>ID = -250μA<br>2 eS =<br>1.5 =i<br>0.4<br>1 VGS = -2.5V, ID = -50mA<br>0.5 VGS = -4.5V, ID = -100mA<br>0 | | | | 0.2<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ ) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 19. On-Resistance Variation with Temperature Figure 20. Gate Threshold Variation vs. Junction<br>Temperature<br>1 100<br>0.9 VGS = 0V f = 1MHz<br>0.8 e s | === = Ciss ==<br>A SS<br>0.7<br>ees ie So<br>0.6 eT t t t<br>0.5 aa 10 VER<br>es [///] tt tt tt<br>0.4 Coss<br>ff S e e<br>0.3 | TA = 125 [o] C if | TA = 85 [o] C Se ee<br>0.2 r TA = 150 [o] C Thr TA = 25 | [o] C Se<br>Crss<br>0.1 TA = -55 [o] C<br>0 FF 1 PEE I ETT<br>0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 12 14 16 18 20<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 21. Diode Forward Voltage vs. Current Figure 22. Typical Junction Capacitance<br>8 10<br>RDS(ON) Limited<br>7<br>PW = 1ms PW = 100µs<br>6 1<br>5<br>4 0.1<br>PW = 10ms<br>3 PW = 100ms<br>VDS = -10V, ID = -250mA PW = 1s<br>2 0.01<br>TJ(Max) = 150 ℃ TC = 25 ℃<br>1 Single Pulse PW = 10s<br>DUT on 1*MRP Board<br>DC<br>0 0.001 VGS = -4.5V<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.1 1 10 100<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 23. Gate Charge Figure 24. SOA, Safe Operation Area<br>)(<br>, DRAIN-SOURCE ON-RESISTANCE , GATE THRESHOLD VOLTAGE (V)<br>DS(ON) GS(TH)<br>R V<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> 7 of 10 **www.diodes.com** DMC21D1UDA Document number: DS39203 Rev. 1 - 2 May 2017 © Diodes Incorporated **DMC21D1UDA** fF **==> picture [417 x 260] intentionally omitted <==** **----- Start of picture text -----**<br> or"<br>1<br>Sassee eee eat<br>a D=0.7<br>D=0.5 Ce mT TINT TTI<br>Fy eae nr te<br>Oe<br>PUI D=0.3 ETI Legon ETT |<br>D=0.9<br>0.1<br>PUI D=0.1 IT ATM TUT UI TINIE TUT<br>Po at re eee eee ee<br>rm| | | Vm TT<br>D=0.05<br>ba te ETT<br>27 A<br>D=0.02<br>sreetit, A0ni GMT NMNGTIV/GNMUTUIGMBONIISMMGUOM BOTT<br>0.01<br>0R anea Nae<br>oN D=0.01 HR HT<br>} TST a a<br>4 D=0.005 a RθJA(t) = r(t) * RθJA TTT<br>D=Single Pulse RθJA = 409 ℃ /W<br>Duty Cycle, D = t1 / t2<br>cco co mii<br>0.001<br>1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 25. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> 8 of 10 **www.diodes.com** DMC21D1UDA Document number: DS39203 Rev. 1 - 2 May 2017 © Diodes Incorporated **DMC21D1UDA** ## **Package Outline Dimensions** Please see http://www.diodes.com/package-outlines.html for the latest version. **X2-DFN0806-6** **==> picture [444 x 206] intentionally omitted <==** **----- Start of picture text -----**<br> X2-DFN0806-6<br>A1<br>A A3 Dim Min Max Typ<br>A -- 0.40 0.36<br>A1 0.00 0.03 0.02<br>Seating Plane A3 -- -- 0.10<br>bd ale ==== b 0.07 0.15 0.10<br>D b2 0.10 0.20 0.15<br>D 0.75 0.85 0.80<br>z1 e z E 0.55 0.65 0.60<br>e -- -- 0.30<br>k -- -- 0.19<br>k L 0.10 0.18 0.13<br>La 0.17 0.25 0.20<br>E z -- -- 0.05<br>z1 -- -- 0.04<br>La(2x) All Dimensions in mm<br>ry = L(4x) ===<br>ti ===<br>b2(2x)<br>b(4x)<br>R0.050<br>**----- End of picture text -----**<br> ## **Suggested Pad Layout** Please see http://www.diodes.com/package-outlines.html for the latest version. **X2-DFN0806-6** **==> picture [147 x 126] intentionally omitted <==** **----- Start of picture text -----**<br> X1 X<br>G<br>Tre LT<br>Y<br>Y2<br>G1<br>Y1<br>‘ Oou, X2<br>**----- End of picture text -----**<br> |**Dimensions**<br>~~——~~|**Value(in mm)**<br>~~——~~| |---|---| |**G**<br>~~——~~|0.150<br>~~——~~| |**G1**<br>~~——~~|0.140<br>~~——~~| |**X**|0.150| |**X1**|0.200| |**X2**|0.800| |**Y**<br>~~——~~|0.275<br>~~——~~| |**Y1**<br>~~——~~|0.345<br>~~——~~| |**Y2**<br>~~——~~|0.760<br>~~——~~| 9 of 10 **www.diodes.com** DMC21D1UDA Document number: DS39203 Rev. 1 - 2 May 2017 © Diodes Incorporated **DMC21D1UDA** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. ## **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated **www.diodes.com** 10 of 10 **www.diodes.com** DMC21D1UDA Document number: DS39203 Rev. 1 - 2 May 2017 © Diodes Incorporated
Updated at June 9, 2026
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