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DMC2053UFDB-7
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 4.6 A, 4.6 A, 0.035 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: U-DFN2020
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.14W
- Power Dissipation P Channel: 1.14W
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 4.6A
- Continuous Drain Current Id P Channel: 4.6A
- Drain Source On State Resistance N Channel: 0.035ohm
- Drain Source On State Resistance P Channel: 0.075ohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.124 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**DMC2053UFDB** @, [ **COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET**
## **Product Summary**
|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|---|
|||||
|**Device**|**BVDSS**|**RDS(ON) Max**|**ID MAX**<br>**TA = +25°C**|
|Q1<br>N-Channel|N-Channel<br>20V|35mΩ@VGS= 4.5V|4.6A|
|||43mΩ@VGS= 2.5V|4.1A|
|Q2<br>P-Channel|-20V|75mΩ @ VGS= -4.5V|-3.1A|
|||110mΩ@VGS= -2.5V|-2.6A|
## **Description and Applications**
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.
- Load Switch
- Power Management Functions
- Portable Power Adaptors
## **Features**
- PCB Footprint of 4mm[2]
- Low On-Resistance
- Low Input Capacitance
- Low Profile, 0.6mm Maximum Height
- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)**
- **Halogen and Antimony Free. “Green” Device (Note 3)**
- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/**
## **Mechanical Data**
- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e4**
- Terminals Connections: See Diagram Below
- Weight: 0.0065 grams (Approximate)
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U-DFN2020-6 (Type B)<br>S2<br>G2<br>D2<br>D1<br>D1<br>D2<br>G1<br>S1<br>Pin1<br>Bottom View<br>**----- End of picture text -----**<br>
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D1 D2<br>G1 G2<br>S1 S2<br>N-Channel MOSFET P-Channel MOSFET<br>Internal Schematic<br>**----- End of picture text -----**<br>
## **Ordering Information** (Note 4)
|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMC2053UFDB-7|U-DFN2020-6(Type B)|3,000/Tape & Reel|
|DMC2053UFDB-13|U-DFN2020-6 (Type B)|10,000/Tape & Reel|
- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
## **Marking Information**
H4 = Product Type Marking Code **H4** YWX = Date Code Marking Y = Year (ex: 0 = 2020) **YWX** W = Week (ex: a = Week 27; z Represents Week 52 and 53) X = Internal Code (ex: U = Monday) Date Code Key **Year 2019 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 Code** 9 0 1 2 3 4 5 6 7 8 9 0 ~~oo~~ **Week 1-26 27-52 53 Code** A-Z a-z z ~~ee~~ **Internal Code Sun Mon Tue Wed Thu Fri Sat Code** T U V W X Y Z ~~[>_—_-_ ff _f- _} __}__f___~~
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DMC2053UFDB Document number: DS41736 Rev. 2 - 2
September 2020 © Diodes Incorporated
**www.diodes.com**
**DMC2053UFDB**
## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.)
|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|||**Symbol**|**Q1**<br>**N-CHANNEL**|**Q2**<br>**P-CHANNEL**|**Unit**|
|Drain-Source Voltage|||VDSS|20|-20|V|
|Gate-Source Voltage|||VGSS|±12|±12|V|
|Continuous Drain Current (Note 6)<br>N-Channel: VGS= 4.5V<br>P-Channel: VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|4.6<br>3.7|-3.1<br>-2.5|A|
|Maximum Continuous BodyDiode Forward Current (Note 6)|||IS|1.1|-1.05|A|
|Pulsed Drain Current (10µs Pulse, DutyCycle = 1%)|||IDM|24|-15|A|
## **Thermal Characteristics**
|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|TA= +25°C|PD|0.82|W|
|Thermal Resistance,Junction to Ambient(Note 5)|SteadyState|RϴJA|153|°C/W|
|Total Power Dissipation(Note 6)|TA= +25°C|PD|1.14|W|
|Thermal Resistance,Junction to Ambient(Note 6)|SteadyState|RϴJA|110|°C/W|
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|
## **Electrical Characteristics Q1 N-CHANNEL** (@ TA = +25°C, unless otherwise specified.)
|**Electrical Characteristics Q1** **N-CHANNEL**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q1** **N-CHANNEL**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q1** **N-CHANNEL**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q1** **N-CHANNEL**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q1** **N-CHANNEL**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q1** **N-CHANNEL**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q1** **N-CHANNEL**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|20|—|—|V|VGS= 0V,ID= 250μA|
|Zero Gate Voltage Drain Current TJ= +25°C|IDSS|—|—|1.0|µA|VDS= 20V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±10|µA|VGS= ±12V,VDS= 0V|
|**ON CHARACTERISTICS(Note 7)**<br>~~=~~<br>~~——~~|||||||
|Gate Threshold Voltage<br>~~PE~~<br>~~——~~|VGS(TH)<br>~~PE~~<br>|0.4<br>~~PE~~<br>|—<br>~~PE~~<br>|1.0<br>~~PE~~<br>|V<br>~~PE~~<br>|VDS= VGS,ID= 250μA<br>~~PE=~~|
|Static Drain-Source On-Resistance<br>~~PE~~<br>~~——~~|RDS(ON)<br>~~PE~~<br>|—<br>~~PE~~<br>|24<br>~~PE~~<br>|35<br>~~PE~~<br>|mΩ<br>~~PE~~<br>|VGS= 4.5V,ID= 5A<br>~~PE=~~|
||||30<br>~~PE~~<br>|43<br>~~PE~~<br>||VGS= 2.5V,ID= 4A<br>~~PE=~~|
||||44<br>~~PE~~<br>|56<br>~~PE~~<br>||VGS= 1.8V,ID= 2A<br>~~PE=~~|
|Diode Forward Voltage<br>~~PE~~<br>~~——~~|VSD<br>~~PE~~<br>|—<br>~~PE~~<br>|0.7<br>~~PE~~<br>|1.2<br>~~PE~~<br>|V<br>~~PE~~<br>|VGS= 0V,IS= 1A<br>~~PE=~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~=~~<br>~~——~~|||||||
|Input Capacitance<br><br>~~——~~<br>~~———~~|Ciss<br><br>~~ee~~|—<br><br>~~ee~~|369<br><br>~~ee~~|—<br><br>~~ee~~|pF<br><br>~~ee~~|VDS= 10V, VGS= 0V,<br>f = 1.0MHz<br>~~=~~|
|Output Capacitance<br><br>~~——~~<br>~~———~~|Coss<br><br>~~ee~~|—<br><br>~~ee~~|54<br><br>~~ee~~|—<br><br>~~ee~~|||
|Reverse Transfer Capacitance<br><br>~~——~~<br>~~———~~|Crss<br><br>~~ee~~|—<br><br>~~ee~~|32<br><br>~~ee~~|—<br><br>~~ee~~|||
|Gate Resistance<br><br>~~——~~<br>~~———~~|Rg<br><br>~~ee~~|—<br><br>~~ee~~|4.1<br><br>~~ee~~|—<br><br>~~ee~~<br>~~e~~|Ω<br><br>~~ee~~<br>~~e~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~=~~<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)<br><br>~~—— ~~<br>~~———~~|Qg<br><br> ~~ee~~|—<br><br>~~ee~~|3.6<br><br>~~ee~~|—<br><br>~~ee~~<br>~~e~~|nC<br><br>~~ee~~<br>~~e~~|VDS= 10V, ID= 6A<br>~~=~~<br>~~ee~~|
|Total Gate Charge(VGS= 10V)<br> <br>~~———~~|Qg<br> ~~ee~~|—<br>~~ee~~|7.7<br>~~ee~~|—<br>~~ee~~<br>~~e~~|||
|Gate-Source Charge<br> <br>~~———~~|Qgs<br> ~~ee~~|—<br>~~ee~~|0.4<br>~~ee~~|—<br>~~ee~~<br>~~e~~|||
|Gate-Drain Charge<br> <br>~~———~~|Qgd<br> ~~ee~~|—<br>~~ee~~|1.0<br>~~ee~~|—<br>~~ee~~<br>~~e~~|||
|Turn-On DelayTime<br> <br>~~———~~<br>~~re~~|tD(ON)<br> ~~ee~~<br>~~re~~|—<br>~~ee~~<br>~~re~~|2.6<br>~~ee~~<br>~~re~~|—<br>~~ee~~<br>~~e~~<br>~~re~~|ns<br>~~ee~~<br>~~e~~<br>~~re~~|VDS= 10V, VGS= 4.5V,<br>Rg= 6Ω, RL= 10Ω, ID= 6A<br>~~ee~~<br>~~re~~|
|Turn-On Rise Time<br> <br>~~———~~<br>~~re~~|tR<br> ~~ee~~<br>~~re~~|—<br>~~ee~~<br>~~re~~|3.0<br>~~ee~~<br>~~re~~|—<br>~~ee~~<br>~~e~~<br>~~re~~|||
|Turn-Off DelayTime<br>~~re~~|tD(OFF)<br>~~re~~|—<br>~~re~~|12.5<br>~~re~~|—<br>~~re~~|||
|Turn-Off Fall Time<br>~~re~~|tF<br>~~re~~|—<br>~~re~~|3.6<br>~~re~~|—<br>~~re~~|||
|Reverse RecoveryTime<br>~~re~~|tRR<br>~~re~~|—<br>~~re~~|6.0<br>~~re~~|—<br>~~re~~|ns<br>~~re~~|IF= 1A,di/dt = 100A/μs<br>~~re~~|
|Reverse RecoveryCharge|QRR|—-|0.9|—|nC|IF= 1A,di/dt = 100A/μs|
6. Device mounted on FR-4 substrate PCB, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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DMC2053UFDB Document number: DS41736 Rev. 2 - 2
September 2020 © Diodes Incorporated
**DMC2053UFDB**
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20 lL VGS = 3V VGS = 2.5V 10 VDS = 5V<br>VGS = 3.5V<br>15 a VGS = 4V e 8 oe<br>VGS = 4.5V VGS = 2V<br>6<br>[ee ee<br>10<br>VGS = 1.8V<br>4 T A = 85°C<br>TA = 125°C<br>5 | y—— VGS = 1.4V VGS = 1.3V TA = 25°C<br>zane VGS = 1.5V 2 TA = 150°C T A = -55°C<br>fo OT<br>0 =) 0<br>0 0.5 1 1.5 2 2.5 3 0 1 2 3<br>V DS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristic Figure 2 Typical Transfer Characteristics<br>0.07 0.09<br>0.08 I D = 4A<br>0.06 PEREZ 0.07 oe I D = 5A<br>VGS = 1.8V<br>Hee 0.06 | | | |<br>a<br>0.05<br>0.05<br>Pt tt tI ee<br>tT ET ET yt 0.04 on ee<br>0.04 V GS = 2.5V<br>0.03<br>ID = 2A<br>0.03 oe V GS = 4.5V 0.02 _<br>CARRERE 0.01 HERE<br>0.02 0<br>0 PLE 1 2 tte 3 4 T 5 ttt 6 7 8 9 10 0 ft 2 | 4 fT 6 ft 8 ft 10 =| 12<br>I D, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs. Figure 4 Typical Drain-Source On-Resistance<br>Drain Current and Gate Voltage vs. Gate-Source Voltage<br>0.06 1.8<br>VGS = 4.5V VGS = 2.5V<br>0.05 TTAA = 150°C = 125°C 1.6 VGS = 4.5VID = 4A<br>BERRERDREE TTT<br>ID = 5A<br>0.04 | TA = 85°C 1.4 TT<br> FRR Tor (se<br>TA = 25°C<br>0.03 1.2<br>SSREEBEEEE TA = -55°C EEEREAa VGS = 1.8V<br>0.02 ID = 2A<br>1<br>a BEEP zeus<br>0.01<br>ELT TEE 0.8 ZO<br>0<br>0 CTL 1 2 3 4 5 6 7 8 9 10 0.6 SEaannae<br>ID, DRAIN CURRENT (A) -50 -25 0 25 50 75 100 125 150<br>Figure 5 Typical On-Resistance vs. TJ, JUNCTION TEMPERATURE ( C)<br>Drain Current and Temperature Figure 6 On-Resistance Variation with Temperature<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>, DRAIN CURRENT (A)<br>D<br> I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br> I<br>D<br>DS(ON)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>
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DMC2053UFDB Document number: DS41736 Rev. 2 - 2
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© Diodes Incorporated
**DMC2053UFDB**
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0.08 1.5<br>0.07 VGS = 1.8V<br>ID = 2A<br>4 oe<br>0.06<br>1<br>crepe LULL<br>0.05<br>—- a Pa 4 ID = 1mA<br>eS SS ID = 250µA<br>0.04<br>VGS = 2.5V<br>0.03 Deaa VGS = 4.5V ID = 4A 0.5 SS 7,<br>0.02 ID = 5A<br>0.01<br>0 Pop 0 ELE<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE ( C)<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Ambient TemperatureJunction Temperature<br>10 1000<br>f = 1MHz<br>9 oe re<br>8<br>C iss<br>7<br>TA = 125°C<br>6<br>OW<br>TA = 85°C<br>5 A 100 \<br>TA = 150°C<br>4 T A = 25°C C oss<br>3 P| COS eee<br>2 TA = -55°C Crss<br>eS<br>1<br>0 >ow co 10<br>0 0.3 ZZ 0.6 ae 0.9 1.2 1.5 0 4 8 12 16 20<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>10 100<br>VDS = 10V PW = 100µs<br>8 ID = 6A 10 PW = 1ms<br>) MINN une PW = 10ms<br>6<br>DC<br>1<br>4 P W = 10s<br>PW = 1s<br>0.1<br>2 TTJ(max)C = 25 = 150°C ° C PW = 100ms<br>V GS = 4.5V<br>Single Pulse<br>DUT on 1*MRP Board<br>0 0.01 all<br>0 2 4 6 8 0.1 1 10 100<br>Q g, TOTAL GATE CHARGE (nC) -VDS DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 Gate Charge Figure 12 SOA, Safe Operation Area<br>S<br>, SOURCE CURRENT (A)<br>I<br>GS<br> GATE THRESHOLD VOLTAGE (V)<br>V<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br> GATE-SOURCE VOLTAGE (V)<br>GS,<br>V<br>T<br>, JUNCTION CAPACITANCE (pF)<br>C<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>V<br>**----- End of picture text -----**<br>
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DMC2053UFDB Document number: DS41736 Rev. 2 - 2
September 2020 © Diodes Incorporated
**DMC2053UFDB** f
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' Lal c o R P o R aT Ld ®<br>**----- End of picture text -----**<br>
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1 eeESS D = 0.9 SSS SSSaa — a<br>ee D = 0.7 CS en ee ~~ [asl]<br>D = 0.5<br>aR a cc<br>aI D = 0.3 LIEeesTINcremeeyA EE TIN TTT ETI ET<br>[Deal<br>0.1 LaerBoLTara D D = = 0.1 0 rrT .05 TPH=”aeertCeo_OAgarCOTEh| EE0 OO|EtOO | |<br>TT TT TT TE A AE Lt<br>_— D = 0.02 7 a ce<br>0.01 PRTLe! D = 0.01 LTT1 FIMOOETI0 LIEOO 0 GGETI GOTUTTI OGTTIOOEIN0 GGTTTEl0 OO<br>aE EEE EE EEE EE EE EE EE = EH EH<br>D = 0.005<br>e yel aimeeCECCIIEh<br>i II TIT<br>D = Single Pulse<br>uC CIMT<br>RJA (t) = r(t) * RJA<br>RJA = 151.2°C/W<br>0.001 Duty Cycle, D = t1/ t2<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>
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DMC2053UFDB Document number: DS41736 Rev. 2 - 2
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**DMC2053UFDB**
**Electrical Characteristics Q2 P-CHANNEL** (@ TA = +25°C, unless otherwise specified.)
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||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|Pf|Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition|
|OFF CHARACTERISTICS (Note 7)|
|||Drain-Source Breakdown Voltage|BVDSS|-20|—|—|V|VGS = 0V, ID = -250μA|
|OD|Zero Gate Voltage Drain Current TJ = +25°C|IDSS|—|—|-1.0|I|(OO|μA|OO|VDS = -20V, VGS = 0V|
|ff|Gate-Source Leakage|IGSS|—|—|±10|μA|VGS = ±12V, VDS = 0V|
|CT|ON CHARACTERISTICS (Note 7)|
|Gate Threshold Voltage|VGS(TH)|-0.45|—|-1.0|V|VDS = VGS, ID = -250μA|
|—|57|75|VGS = -4.5V, ID = -3.5A|
|Static Drain-Source On-Resistance|RDS(ON)|—|73|110|mΩ|VGS = -2.5V, ID = -3.0A|
|==.|—|105|168|VGS = -1.8V, ID = -2.0A|
|ee|ee|eee|ee|
|Diode Forward Voltage|VSD|—|-0.7|-1.2|V|VGS = 0V, IS = -1.0A|
|||DYNAMIC CHARACTERISTICS (Note 8)|
|Gs|Input Capacitance|Ciss|—|440|—|pF|
|VDS = -10V, VGS = 0V,|
|Output Capacitance|Coss|—|60|—|pF|
|f = 1.0MHz|
|Reverse Transfer Capacitance|Crss|—|48|—|pF|
|es|ee|ee|ee ee|
|sO|Gate Resistance|Rg|—|8.5|—|Ω|VDS = 0V, VGS = 0V, f = 1MHz|
|Total Gate Charge (VGS = -4.5V)|—|5.9|—|nC|
|Qg|
|Total Gate Charge (VGS = -8V)|—|12.7|—|nC|
|VDS = -4V, ID = -3.5A|
|Gate-Source Charge|Qgs|—|0.6|—|nC|
|SSeG|Gate-Drain Charge|Qgd|—|2.1|—|nC|
|Turn-On Delay Time|tD(ON)|—|3.2|—|ns|
|a|
|Turn-On Rise Time|tR|—|7.8|—|ns|VDS = -4V, VGS = -4.5V,|
|Gs|Turn-Off Delay Time|tD(OFF)|—|31|—|ns|RL = 4Ω, Rg = 6Ω|
|ee|Turn-Off Fall Time|tF|—|ee|18|ee|—|ns|
|a|
|GG|Body Diode Reverse Recovery Time|tRR|—|GO|10.5|—|ns|IS = -2.0A, dI/dt = 100A/μs|
|rs|Body Diode Reverse Recovery Charge|QRR|Gs|—|3.0|GO|—|nC|IS = -2.0A, dI/dt = 100A/μs|
|Notes:|7. Short duration pulse test used to minimize self-heating effect.|
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8. Guaranteed by design. Not subject to product testing.
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DMC2053UFDB Document number: DS41736 Rev. 2 - 2
September 2020 © Diodes Incorporated
**DMC2053UFDB**
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10 VGS = -4.0V VGS = -2.5V 10<br>VGS = -4.5V VGS = -3.0V VDS = -5.0V<br>8 V GS = -3.5V VGS = -2.0V 8<br>|or<br>6 6 T A = 85°C<br>f= VGS = -1.8V TA = 125°C<br>TA = 25°C<br>4 4 TA = 150 ° C<br>TA = -55°C<br>2 |<br>fe VGS = -1.5V 2 a<br>VGS = -1.4V<br>0 ———_— VGS = -1.3V 0 J<br>0 0.5 1 1.5 2 2.5 3 0 1 2 3<br>-VDS, DRAIN -SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 14 Figure 1 Typical Output Characteristics Figure 15 Figure 2 Typical Transfer Characteristics<br>0.14 0.2<br>0.11 VGS = -1.8V 0.15<br>0.08 sy V GS = -2.5V 0.1 Faas I D = -3A<br>ID = -3.5A<br>UT VGS = -4.5V A ID = -2A<br>0.05 FO 0.05 [Ae<br>0.02 TEE 0 LEE<br>0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12<br>-ID, DRAIN SOURCE CURRENT (A) -VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs. Figure 16 Typical On-Resistance vs. Figure 17 Figure 4 Typical Drain-Source On-Resistance<br>Drain Current and Gate Voltage Drain Current and Gate Voltage vs. Gate-Source Voltage<br>0.12 1.8<br>0.11 V GS = -4.5V<br>TTT VGS = -4.5V<br>0.1 T A = 150°C 1.6 ID = -3.5A<br>0.09 TA = 125 ° C VGS = -2.5V<br>0.08 T A = 85°C 1.4 I D = -3A<br>0.07<br>0.06 ERR T A = 25°C EAE 1.2 A VGS = -1.8V<br>0.05 ID = -2A<br>Per Zo<br>0.04 TA = -55°C<br>Ppp 1 BEEP zade<br>0.03<br>0.02 CEREEEEF EE A<br>0.8<br>0.01<br>0<br>0 SEER 1 2 3 4 EEE 5 6 7 8 9 10 0.6 “TEE<br>-IFigure 18-IFigure 5 DD, DRAIN SOURCE CURRENT(A) , DRAIN SOURCE CURRENT (A) T ypical On-Resiypical On-Resi st ance vs. ance vs. -50 -25TJ, JUNCTION TEMPERATURE (0 25 50 75 100 C)125 150<br>Drain Current and Temperature Drain Current and Temperature Figure 19 Figure 6 On-Resistance Variation with Temperature<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>D<br>, DRAIN CURRENT (A)<br>-I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>D<br>, DRAIN CURRENT (A)<br>-I<br>DS(ON)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>
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DMC2053UFDB Document number: DS41736 Rev. 2 - 2
September 2020 © Diodes Incorporated
**DMC2053UFDB**
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0.16 1.5<br>0.14<br>ttt tt<br>0.12<br>VGS = -1.8V<br>0.1 CoE ID = -2A ed a 1 —<br>0.08 VIDGS = -3A = -2.5V Bea -ID = 250µA -ID = 1mA<br>0.06 are<br>ea VGS = -4.5V 0.5 ™“<br>ID = -3.5A<br>0.04 cL{TEETT =~<br>0.02<br>0 TTT 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TA, AMBIENT TEMPERATURE (°C)<br>Figure 20 Figure 7 On-Resistance Variation with Temperature Figure 21Figure 8 Gate Threshold Variation vs. Ambient Temperature<br>10 1000<br>f = 1MHz<br>9<br>8 ee | ee \eeoo C iss<br>7<br>ee || jr<br>6<br>eee || &<br>5 ees | 100 Nee<br>TA= 125°C TA= 85°C<br>4 C oss<br>TA = 150°C<br>3 TA= 25°C C rss<br>NATE =<br>2 TA = -55°C<br>1 |)<br>0 10<br>0 0.3 0.6 0.9 1.2 1.5 0 4 8 12 16 20<br>-VSD, SOURCE-DRAIN VOLTAGE (V) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 22 Figure 9 Diode Forward Voltage vs. Current Figure 23 Figure 10 Typical Junction Capacitance<br>10 100 RDS(on)<br>Limited<br>P W = 10ms<br>8 V DS = -15V PW = 1ms<br>ID = -6A 10 PW = 100µs<br>6<br>DC<br>1<br>PW = 10s<br>4<br>P W = 1s<br>/ ie SS<br>2 0.1 TJ(max) = 150°C PW = 100ms<br>T A = 25°C<br>VV GS GS = 4.5V = -4.5V<br>Single Pulse<br>0 PPP Ty yy 0.01 DUT on 1 * MRP Board =aHestall<br>0 2 4 6 8 10 12 14 16 18 0.1 1 10 100<br>Qg, TOTAL GATE CHARGE (nC) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 24 Figure 11 Gate Charge Figure 12 SOA, Safe Operation AreaFigure 25 SOA, Safe Operation Area<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(on)<br>R<br>, SOURCE CURRENT (A)<br>-I<br>S<br>GS<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>T<br>, JUNCTION CAPACITANCE (pF)<br>C<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br>
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DMC2053UFDB Document number: DS41736 Rev. 2 - 2
September 2020 © Diodes Incorporated
**DMC2053UFDB**
## **Package Outline Dimensions**
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Please see http://www.diodes.com/package-outlines.html for the latest version.<br>A3<br>A1<br>A<br>Seating Plane<br>Sat<br>D<br>D2 D2<br>z1<br>E z1 E2<br>k<br>L<br>e<br>z<br>b<br>(Pin #1 ID)<br>R0.150<br>**----- End of picture text -----**<br>
**U-DFN2020-6 (Type B)**
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U-DFN2020-6<br>Type B<br>Dim Min Max Typ<br>A 0.545 0.605 0.575<br>A1 0.00 0.05 0.02<br>A3 - - 0.13<br>b 0.20 0.30 0.25<br>D 1.95 2.075 2.00<br>D2 0.50 0.70 0.60<br>e - - 0.65<br>E 1.95 2.075 2.00<br>E2 0.90 1.10 1.00<br>k - - 0.45<br>L 0.25 0.35 0.30<br>z - - 0.225<br>z1 - - 0.175<br>All Dimensions in mm<br>**----- End of picture text -----**<br>
## **Suggested Pad Layout**
Please see http://www.diodes.com/package-outlines.html for the latest version.
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U-DFN2020-6 (Type B)<br>X2<br>C<br>f=<br>Value<br>Dimensions<br>(in mm)<br>C 0.650<br>G 0.150<br>G1 0.450<br>X 0.350<br>X1(2x)<br>X1 0.600<br>Y2 Y1(2x) G X2 1.650<br>Y 0.500<br>G1<br>Y1 1.000<br>Rae Y2 2.300<br>Y<br>“t nus X =<br>**----- End of picture text -----**<br>
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DMC2053UFDB Document number: DS41736 Rev. 2 - 2
September 2020 © Diodes Incorporated
**DMC2053UFDB**
## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
## **LIFE SUPPORT**
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
- A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
- B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
**www.diodes.com**
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DMC2053UFDB Document number: DS41736 Rev. 2 - 2
September 2020 © Diodes Incorporated
Updated at June 9, 2026
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