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DMC2038LVTQ-7
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 3.7 A, 3.7 A, 0.035 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: AEC-Q101
- Transistor Case Style: TSOT-26
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 800mW
- Power Dissipation P Channel: 800mW
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 3.7A
- Continuous Drain Current Id P Channel: 3.7A
- Drain Source On State Resistance N Channel: 0.035ohm
- Drain Source On State Resistance P Channel: 0.074ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.115 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**NOT RECOMMENDED FOR NEW DESIGN USE DMC2053UVT DMC2038LVT** ~~|~~ ## **COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET** ## **Product Summary** |**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**| |---|---|---|---| ||||| |**Device**|**BVDSS**|**RDS(ON)**|**ID **<br>**TA = +25°C**| |Q1|20V|35mΩ@VGS= 4.5V|4.5A| |||56mΩ@VGS= 1.8V|3.5A| |Q2|-20V|74mΩ@VGS= -4.5V|-3.1A| |||168mΩ@VGS= -1.8V|-2.0A| ## **Features** - Low On-Resistance - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - Fast Switching Speed - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** - **Halogen and Antimony Free. “Green” Device (Note 3)** ## **Description** This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. - **Qualified to AEC-Q101 Standards for High Reliability** - **PPAP Capable (Note 4)** ## **Mechanical Data** - Case: TSOT26 - Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 ## **Applications** - Motor Control - Moisture Sensitivity: Level 1 per J-STD-020 - Power Management Functions - Terminals Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 - DC-DC Converters - Backlighting **==> picture [486 x 264] intentionally omitted <==** **----- Start of picture text -----**<br> Terminal Connections Indicator: See Diagram<br> Weight: 0.013 grams (Approximate)<br>TSOT26 Q1 Q2<br>D1 D2<br>G1 1 6 D1<br>S2 2 5 S1<br>G1 G2<br>G2 3 4 D2<br>® O S<br>Top View S1 S2<br>Top View Pin Configuration N-Channel P-Channel<br>g Information Information (Note 5)<br>Part Number Compliance Case Packaging<br>DMC2038LVT-7 Standard TSOT26 3000/Tape & Reel<br>DMC2038LVTQ-7 Automotive TSOT26 3000/Tape & Reel<br>1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.<br>2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and<br> Lead-free.<br>3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and<br> <1000ppm antimony compounds.<br>**----- End of picture text -----**<br> ## **Ordering Information Information** (Note 5) - Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to https://www.diodes.com/quality/. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. ## **Marking Information** **==> picture [527 x 123] intentionally omitted <==** **----- Start of picture text -----**<br> 31C = Product Type Marking Code<br>31C YM = Date Code Marking<br>Y = Year (ex: F = 2018)<br>M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2017 2018 2019 2020 2021 2022 2023<br>Code E F G H I J K<br>a<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>——ee Code 1 2 3 4 5 6 7 8 9 ee O ee N D<br>DMC2038LVT 1 of 10 December 2018<br>Document number: DS35417 Rev. 8 - 3 www.diodes.com © Diodes Incorporated<br>YM<br>**----- End of picture text -----**<br> **NOT RECOMMENDED FOR NEW DESIGN USE DMC2053UVT** **DMC2038LVT** ## **Maximum Ratings N-CHANNEL – Q1** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratingsgss** **N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---| ||||||| |**Characteristic**|||**Symbol**|**Value**|**Unit**| |Drain-Source Voltage|||VDSS|20|V| |Gate-Source Voltage|||VGSS|±12|V| |Continuous Drain Current (Note 6) VGS= 4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|3.7<br>3.0|A| ||t<10s|TA= +25°C<br>TA= +70°C|ID|4.1<br>3.2|A| |Continuous Drain Current (Note 7) VGS= 4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|4.5<br>3.6|A| ||t<10s|TA= +25°C<br>TA= +70°C|ID|5.2<br>4.2|A| |Maximum Continuous BodyDiode Forward Current (Note 7)|||IS|1.5|A| |Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)|||IDM|25|A| ## **Maximum Ratings P-CHANNEL – Q2** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratingsgss** **P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---| ||||||| |**Characteristic**|||**Symbol**|**Value**|**Unit**| |Drain-Source Voltage|||VDSS|-20|V| |Gate-Source Voltage|||VGSS|±12|V| |Continuous Drain Current (Note 6) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-2.6<br>-2.1|A| ||t<10s|TA= +25°C<br>TA= +70°C|ID|-2.9<br>-2.4|A| |Continuous Drain Current (Note 7) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-3.1<br>-2.5|A| ||t<10s|TA= +25°C<br>TA= +70°C|ID|-3.8<br>-3.0|A| |Maximum Continuous BodyDiode Forward Current (Note 7)|||IS|-1.5|A| |Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)|||IDM|-17|A| ## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) |**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---| |||||| |**Characteristic**||**Symbol**|**Value**|**Units**| |Total Power Dissipation (Note 6)|TA= +25°C|PD|0.8|W| ||TA= +70°C||0.5|| |Thermal Resistance, Junction to Ambient (Note 6)|SteadyState|RJA|168|°C/W| ||t<10s||120|| |Total Power Dissipation (Note 7)|TA= +25°C|PD|1.1|W| ||TA= +70°C||0.7|| |Thermal Resistance, Junction to Ambient (Note 7)|SteadyState|RθJA|114|°C/W| ||t<10s||72|| |Thermal Resistance, Junction to Case (Note 7)||RθJC|39|| |Operating and Storage Temperature Range||TJ,TSTG|-55 to +150|°C| - Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 2 of 10 **www.diodes.com** DMC2038LVT Document number: DS35417 Rev. 8 - 3 December 2018 © Diodes Incorporated **NOT RECOMMENDED FOR NEW DESIGN USE DMC2053UVT** **DMC2038LVT** ## **Electrical Characteristics N-CHANNEL – Q1** (@TA = +25°C, unless otherwise specified.) |**Electrical Characteristics** **N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---|---| |||||||| |**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**| |**OFF CHARACTERISTICS(Note 8) **||||||| |Drain-Source Breakdown Voltage|BVDSS|20|—|—|V|VGS= 0V, ID= 250μA| |Zero Gate Voltage Drain Current @TC= +25°C|IDSS|—|—|1.0|μA|VDS= 16V, VGS= 0V| |Gate-Source Leakage|IGSS|—|—|±100|nA|VGS= ±12V, VDS= 0V| |**ON CHARACTERISTICS(Note 8)**||||||| |Gate Threshold Voltage|VGS(TH)|0.4|—|1.0|V|VDS= VGS, ID= 250μA| |Static Drain-Source On-Resistance<br>~~7~~|RDS(ON)<br>~~7~~|—<br>~~7~~|27<br>~~7~~|35<br>~~7~~|mΩ<br>~~7~~|VGS= 4.5V, ID= 4.0A<br>~~7~~| |||—<br>~~7~~|33<br>~~7~~|43<br>~~7~~||VGS= 2.5V, ID= 2.5A<br>~~7~~| |||—<br>~~7~~|43<br>~~7~~|56<br>~~7~~||VGS= 1.8V, ID= 1.5A<br>~~7~~| |Forward Transfer Admittance<br>~~7~~||Yfs|<br>~~7~~|—<br>~~7~~|9<br>~~7~~|—<br>~~7~~|S<br>~~7~~|VDS= 5V, ID= 3.4A<br>~~7~~| |Diode Forward Voltage|VSD|0.4|—|1.1|V|VGS= 0V, IS= 1A| |**DYNAMIC CHARACTERISTICS(Note 9)**||||||| |Input Capacitance<br>~~SS~~|Ciss<br>~~SS~~|—<br>~~SS~~|400<br>~~SS~~|530<br>~~SS~~|pF<br>~~SS~~|VDS= 10V, VGS= 0V,<br>f = 1.0MHz<br>~~SS~~| |Output Capacitance<br>~~SS~~|Coss<br>~~SS~~|—<br>~~SS~~|70<br>~~SS~~|90<br>~~SS~~|pF<br>~~SS~~|| |Reverse Transfer Capacitance<br>~~SS~~|Crss<br>~~SS~~|—<br>~~SS~~|65<br>~~SS~~|100<br>~~SS~~|pF<br>~~SS~~|| |Gate Resistance<br>~~SS~~|Rg<br>~~SS~~|—<br>~~SS~~|1.9<br>~~SS~~|—<br>~~SS~~|Ω<br>~~SS~~|VDS= 0V, VGS= 0V, f = 1MHz<br>~~SS~~| |Total Gate Charge(VGS= 4.5V)|Qg|—|5.7|—|nC|VDS= 15V, ID= 5.8A| |Total Gate Charge(VGS= 10V)|Qg|—|12|17|nC|| |Gate-Source Charge|Qgs|—|0.7|—|nC|| |Gate-Drain Charge|Qgd|—|1.4|—|nC|| |Turn-On DelayTime|tD(ON)|—|5|10|ns|VDS= 10V, VGS= 4.5V,<br>RG= 6Ω, IDS= 1A| |Turn-On Rise Time|tR|—|8|16|ns|| |Turn-Off DelayTime|tD(OFF)|—|25|40|ns|| |Turn-Off Fall Time|tF|—|8|16|ns|| Notes: 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. **==> picture [471 x 219] intentionally omitted <==** **----- Start of picture text -----**<br> 30 20<br>25 VGSV=4.5VGS=10V VE VDS= 5.0V TA = -55C / TA = 85C<br>VGS=4.0V VGS=3.0V 15 TA = 150C<br>20 VGS=3.5V VGS=2.5V TA = 25C TA = 125C<br>15 10<br>We<br>VGS=2.0V<br>10<br>5<br>5 7aeaeee see<br>VGS=1.5V<br>0 L-—-_ 0 jy<br>0 0.5 1 1.5 2 0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN -SOURCE VOLTAGE(V) VGS, GATE SOURCE VOLTAGE(V)<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> 3 of 10 **www.diodes.com** DMC2038LVT Document number: DS35417 Rev. 8 - 3 December 2018 © Diodes Incorporated **DMC2038LVT** **==> picture [482 x 716] intentionally omitted <==** **----- Start of picture text -----**<br> NOT RECOMMENDED FOR NEW DESIGN<br>USE DMC2053UVT DMC2038LVT<br>0.08 0.08<br>VGS= 4.5V<br>| ff<br>0.07<br>TA = 150C<br>0.06 0.06 TA = 125C<br>0.05 V GS = 1.8V<br>0.04 0.04<br>VGS = 2.5V TA = 85C<br>Co a<br>0.03 VGS = 4.5V TA = 25C<br>0.02 0.02<br>Tt — CN TA = -55C<br>0.01<br>eo YN<br>0 0<br>0 5 10 15 20 0 4 8 12 16 20<br>oe ID, DRAIN SOURCE CURRENT (A) Cee ID, DRAIN SOURCE CURRENT (A)<br>Fig. 3 Typical On-Resistance vs. Fig. 4 Typical On-Resistance vs.<br>Drain Current and Gate Voltage Drain Current and Temperature<br>1.7 0.06<br>1.5 0.05 V GS =5V<br>ID=5A<br>| tt | we YOY LU<br>1.3 0.04<br>TRE QOp=<br>1.1 0.03 V GS =10V<br>ID=10A<br>0.9 LS 0.02 SE<br>TOY Qa<br>0.7 0.01<br>GOIN<br>0.5 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>LAX < LPP LETT<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>) 1.5 a - 2018 Saaceenner<br>( [V]<br>G [E] ) 16 ee<br>T [A]<br>O [L] VD 1 St IO . 14 C ECRE TA= 25C E<br>12<br>O [L]<br>HS = I =1mAD 10 Coe a<br>E<br>R<br><n Coe<br>8<br>T [H]<br>0.5 a CCE<br>T [E] —— 6 Core<br>G [A]<br>I =250µAD<br>, 4<br>Sonne) /000ne<br>( [TH)]<br>VG [S] 0 20 Core Co<br>-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1 1.2 1.4<br>T , AMBIENT TEMPERATURE (°C)A VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>DS(ON)<br>(Normalized)<br>, DRAIN-SOURCE ON-RESISTANCE<br>R<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>S<br>, SOURCE CURRENT (A)<br>I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE(<br>DS(ON)<br>R<br>)<br>,DRAIN-SOURCE ON-RESISTANCE(<br>R<br>DS(ON)<br>**----- End of picture text -----**<br> 4 of 10 **www.diodes.com** DMC2038LVT Document number: DS35417 Rev. 8 - 3 December 2018 © Diodes Incorporated **NOT RECOMMENDED FOR NEW DESIGN USE DMC2053UVT** **DMC2038LVT** **==> picture [477 x 657] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 10<br>a —————es f = 1MHz<br>ee Ciss<br>eO Oe 8 / /<br>( [pF)]<br>N [CE] VDS=15V<br>6<br>C [ITA]<br>A<br>P /<br>C [A] 100 a<br>re Coss 4<br>Crss<br>UN [CTION] es—+ a = CLEN q<br>es ee ee 2 / 4<br>, [J] T<br>C<br>10 0<br>0 5 10 15 20 0 2 4 6 8 10 12 14<br>V , DRAIN-SOURCE VOLTAGE (V)DS Fig. 10 Gate-Charge CharacteristicsQg, TOTAL GATE CHARGE (nC)<br>Fig. 9 Typical Junction Capacitance<br>100<br>Po<br>SSS RDSON) Se : ‘©<br>Limited<br>10 ULAN ana Scacilia Sinn<br>[A)]<br>T [(]<br>[N] E | _ IR NNR<br>R<br>R OREN DC HPOPT tT<br>U 1<br>C P = 10sW<br>[IN] RA jf | P = 1sWP = 100msW NANTES NET<br>D P = 10msW<br>| fT | NANSSK SGI<br>,I D 0.1 T = 150°CJ(max) eS P = 1msWP = 100µsW SSSEPaii<br>T = 25°CA atte<br>V = 10VGS Leeses<br>Single Pulse<br>0.01 DUT on 1 * MRP Board A yi N hhNU4 “a i if<br>0.1 1 10 100<br>V , DRAIN-SOURCE VOLTAGE (V)DS<br>Fig. 11 SOA, Safe Operation Area<br>1<br>iil D = 0.7D = 0.5 Htt4 PTcaTTAeeTT Nee gee<br>FS oe coe<br>LAA SG aca<br>TTCae D = 0.3 a NLLeee Zi HAT TTT TUT<br>0.1<br>Eere D a = 0.1 a eeoeteeeee D = 0.9 a<br>eT en eeeOt<br>ima, D = 0.05 D = 0.02 [Se] PHATE<br>0.01 eeeUe<br>D = 0.01<br>SRa D = 0.005 oo teey SEee tee eae eeeee RRθJJ A (t) = r(t) (t) = r(t) ct * * R Rθ J AA TTT<br>FeTToZe RR θJA JA = = 6 1 6 4 ℃癈 /W /W TTTCH<br>Duty Cycle, D = t1/ t2Duty Cycle, D = t1 / t2<br>Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIMES (sec)<br>t1, PULSE DURATION TIME (sec)<br>Fig. 12 Transient Thermal Resistance<br>Fig. 12 Transient Thermal Resistance<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>ID<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> 5 of 10 **www.diodes.com** DMC2038LVT Document number: DS35417 Rev. 8 - 3 December 2018 © Diodes Incorporated **NOT RECOMMENDED FOR NEW DESIGN USE DMC2053UVT** **DMC2038LVT** ## **Electrical Characteristics P-CHANNEL – Q2** (@TA = +25°C, unless otherwise specified.) **==> picture [522 x 618] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition| |OFF CHARACTERISTICS (Note 8)| |Drain-Source Breakdown Voltage|BVDSS|-20|—|—|V|VGS = 0V, ID = -250μA| |Zero Gate Voltage Drain Current @TC = +25°C|IDSS|—|—|-1.0|μA|VDS = -16V, VGS = 0V| |Gate-Source Leakage|IGSS|—|—|±100|nA|VGS = ±12V, VDS = 0V| |ON CHARACTERISTICS (Note 8)| |ef|Gate Threshold Voltage|VGS(TH)|-0.4|—|-1.0|V|VDS = VGS, ID = -250μA| |—|57|74|VGS = -4.5V, ID = -3.0A| |Static Drain-Source On-Resistance|RDS(ON)|—|76|110|mΩ|VGS = -2.5V, ID = -1.5A| |===)|Forward Transfer Admittance||Yfs||— —|102 10|168 —|S|VVGSDS|=|= -5V, I = -1.8V, ID = -3.0A D = -1.0A| |Diode Forward Voltage|VSD|—|-0.8|-1.0|V|VGS = 0V, IS = -0.6A| |DYNAMIC CHARACTERISTICS (Note 9)| |Input Capacitance|Ciss|—|530|705|pF| |Output Capacitance|Coss|—|70|95|pF|VDS = -10V, VGS = 0V,| |f = 1.0MHz| |ISS|Reverse Transfer Capacitance|Crss|—|60|90|pF| |Gate Resistance|Rg|—|72|—|Ω|VDS = 0V, VGS = 0V, f = 1MHz| |Total Gate Charge (VGS = -4.5V)|Qg|—|7|10|nC| |Total Gate Charge (VGS = -10V)|Qg|—|14|—|nC|VDS = -15V, ID = -6A| |Gate-Source Charge|Qgs|—|0.95|—|nC| |Gate-Drain Charge|Qgd|—|1.2|—|nC| |Turn-On Delay Time|tD(ON)|—|11|20|ns| |Turn-On Rise Time|tR|—|12|22|ns|VDS = -10V, VGS = -4.5V,| |Turn-Off Delay Time|tD(OFF)|—|21|34|ns|RG = 6Ω, IS = -1A| |rs|Turn-Off Fall Time|tF|ca|—|13|=|23|a|ns| |Notes:|8.|Short duration pulse test used to minimize self-heating effect.| |9. Guaranteed by design. Not subject to product testing.| |20|20| |-VGS=10V|VDS =|-|5.0V| |-VGS=4.5V| |15|-V|GS|=4.0V|-VGS=3.0V|15| |10|-V|GS|=3.5V|-V|GS|=2.5V|10| |5|-VGS=2.0V|5| |Ba| |-VGS=1.5V| |0|0| |0|L-—|0.5|1|1.5|2|0|ALLELE|0.5|1|1.5|2|2.5|3|3.5|4|4.5|5| |-VDS, DRAIN -SOURCE VOLTAGE(V)|-VGS, GATE SOURCE VOLTAGE(V)| |Fig. 13 Typical Output Characteristics|Fig. 14 Typical Transfer Characteristics| **----- End of picture text -----**<br> 6 of 10 **www.diodes.com** DMC2038LVT Document number: DS35417 Rev. 8 - 3 December 2018 © Diodes Incorporated **NOT RECOMMENDED FOR NEW DESIGN USE DMC2053UVT** **DMC2038LVT** **==> picture [490 x 674] intentionally omitted <==** **----- Start of picture text -----**<br> 0.16 0.20<br>VVGSDS= 4.5V = -4.5V<br>0.18<br>0.16 ee<br>0.12 PA| Ef) eee<br>VGS = -1.8V 0.14 PF ee eee TA = 150C<br>VGS = -2.5V 0.12 TA = 125C<br>0.08 Cpe] 0.080.1 ——_| | fT<br>VGS = -4.5V TA = 85C<br>0.04 — | 0.06 FeRPoOS TA = 25C<br>0.04<br>0.02 |[Le TA = -55 C<br>0 Pt 0 »s<br>0 5 10 15 20 0 4 8 12 16 20<br>-ID, DRAIN SOURCE CURRENT LL. (A) eo -ID, DRAIN SOURCE CURRENT (A) \4ne<br>Fig. 15 Typical On-Resistance vs. Fig. 16 Typical On-Resistance vs.<br>Drain Current and Gate Voltage Drain Current and Temperature<br>1.7 0.14<br>1.5 The) . X 0.12 ANOT<br>1.3 0.1 -V -I DGS =5A =5V<br>sp az a 0.08 CD<br>1.1 “Th ERY AGF<br>0.06<br>-VGS=10V<br>0.9 AACE) QY an -ID=10A<br>TAO 0.04 Qe<br>0.7 a yO WN<br>— 4 0.02 LEE<br>0.5 0<br>-50 Ea?) -25 0 25 50 75 100 125 150 -50 eeeeee -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 17 On-Resistance Variation with Temperature Fig. 18 On-Resistance Variation with Temperature<br>1.5 20<br>18<br>Cy‘; (-- TEECCETOEEEn<br>16<br>1 DOW 14 SESE<br>12<br>xX 10 PLL ET TT TELE<br>ae 8 PLETE LE ELEIALLL<br>0.5 = Co<br>6<br>SS PFET ELE VELL<br>4<br>2<br>0 TV 47250407R 0 P Ff PTELETAL t y ter eet A ty EE<br>-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6<br>TA, AMBIENT TEMPERATURE ( °C 癈 ) -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 19 Gate Threshold Variation vs. Ambient Temperature Fig. 20 Diode Forward Voltage vs. Current<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>S<br>-I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE(<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>(Normalized)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>, GATE THRESHOLD VOLTAGE(V)<br>GS(TH)<br>-V<br>**----- End of picture text -----**<br> 7 of 10 **www.diodes.com** DMC2038LVT Document number: DS35417 Rev. 8 - 3 December 2018 © Diodes Incorporated **NOT RECOMMENDED FOR NEW DESIGN USE DMC2053UVT** **DMC2038LVT** **==> picture [474 x 656] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 a 10<br>f = 1MHz<br>re ee Ciss /<br>oo<br>8<br>( [pF)] ee a<br>N [CE]<br>6<br>C [ITA]<br>A<br>P 100 Qg vs. VGS<br>C [A]<br>a Coss =<br>ee — 4 /|<br>Crss<br>[Oeee ee<br>U [NCTION]<br>ee a 2 LAWN<br>C [,J] T<br>10 0<br>0 2 4 6 8 10 12 14 16<br>0 5 10 15 20<br>-V , DRAIN-SOURCE VOLTAGE (V)DS Fig. 22 Gate-Charge CharacteristicsQg, TOTAL GATE CHARGE (nC)<br>Fig. 21 Typical Junction Capacitance<br>100<br>Cece<br>ee ee x ‘©<br>10 RDS(ON)<br>[A)] eg Limited ete<br>T [(] ORINea eeANNT NS ox<br>[N] E PONENT<br>R<br>R<br>U<br>C 1 DC<br>[IN] RA Coo|— P W= 10sP TRAY W = 1s NAANPONETTENeSNS PKINess Sane]<br>D P W = 100ms<br>-, [I] D 0.1 | T J(max) | = 150°C PW = 10msP W = 1ms WO)RANXe<br>T A = 25°C P W = 100µs<br>VGS = -10V —oS a 7Aa a A cocci<br>Single Pulse<br>DUT on 1 * MRP Board Ee<br>0.01 "Ay WiA<br>0.1 1 10 100<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 23 SOA, Safe Operation Area<br>1<br>FN D = 0.7 EETa NR rr tt<br>Po D = 0.5 D = 0.3 Cara2 meTN ee mm TT<br>aS NOE ean Cama EM MOTI AITO<br>0.1 UT ATTICA | ETTIN | CTTIE UTTT<br>eee D = 0.1 ee D = 0.9<br>Stset<br>D = 0.05<br>r™CTA CITT AHFTTTEHH<br>a<br>D = 0.02<br>LENTCA THT TH TEER PHT TTT<br>Oe a a ee<br>0.01<br>EyaCEE D D = 0.005= 0.01 aecZo RRRR θJA θJA JA JA (t) = r(t) = 164(t) = r(t) * R= 164 癈℃ */W /W RθJAJA CUOLETT<br>Duty Cycle, D = t1/ t2Duty Cycle, D = t1 / t2<br>Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIMES (sec)t1, PULSE DURATION TIME (sec)<br>Fig. 24 Transient Thermal ResistanceFig. 24 Transient Thermal Resistance<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>-V<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> 8 of 10 **www.diodes.com** DMC2038LVT Document number: DS35417 Rev. 8 - 3 December 2018 © Diodes Incorporated **NOT RECOMMENDED FOR NEW DESIGN USE DMC2053UVT** **DMC2038LVT** ## **Package Outline Dimensions** Please see http://www.diodes.com/package-outlines.html for the latest version. **==> picture [467 x 454] intentionally omitted <==** **----- Start of picture text -----**<br> TSOT26<br>D<br>e1 0 1(4x) TSOT26<br>Dim Min Max Typ<br>E1/2 A 1.00 <br>A1 0.010 0.100 <br>E/2<br>A2 0.840 0.900 <br>D 2.800 3.000 2.900<br>E1 E c E 2.800 BSC<br>Gauge Plane<br>E1 1.500 1.700 1.600<br>0 Seating Plane b 0.300 0.450 <br>L c 0.120 0.200 <br>L2 e 0.950 BSC<br>Fis<br>e1 1.900 BSC<br>e b 0 1(4x) L 0.30 0.50 <br>A2 L2 0.250 BSC<br>θ 0° 8° 4°<br>A1<br>A θ1 4° 12° <br>All Dimensions in mm<br>Seating Plane<br>ggested Pad Layout ested Pad Layout yout out<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>TSOT26<br>C<br>Dimensions Value (in mm)<br>C 0.950<br>X 0.700<br>Y1<br>Y 1.000<br>Y1 3.199<br>ee ==<br>Y<br>X<br>0G:<br>**----- End of picture text -----**<br> ## **Suggested Pad Layout ested Pad Layout yout out** 9 of 10 **www.diodes.com** DMC2038LVT Document number: DS35417 Rev. 8 - 3 December 2018 © Diodes Incorporated **NOT RECOMMENDED FOR NEW DESIGN USE DMC2053UVT** **DMC2038LVT** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings » noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: we A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or WD 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. NE Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its US representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2018, Diodes Incorporated **www.diodes.com** cx 10 of 10 **www.diodes.com** DMC2038LVT Document number: DS35417 Rev. 8 - 3 December 2018 © Diodes Incorporated
Updated at June 9, 2026
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