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DMC2038LVT
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 3.7 A, 3.7 A, 0.027 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: TSOT-26
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.13W
- Power Dissipation P Channel: 1.13W
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 3.7A
- Continuous Drain Current Id P Channel: 3.7A
- Drain Source On State Resistance N Channel: 0.027ohm
- Drain Source On State Resistance P Channel: 0.027ohm
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.127 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
**DMC2038LVT** ## **COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET** ## **Product Summary** |**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**| |---|---|---|---| ||||| |**Device**|**V(BR)DSS**|**RDS(ON)**|**ID **<br>**TA = +25°C**| |Q1|20V|35mΩ@VGS= 4.5V|4.5A| |||56mΩ@VGS= 1.8V|3.5A| |Q2|-20V|74mΩ@VGS= -4.5V|-3.1A| |||168mΩ@VGS= -1.8V|-2.0A| ## **Features** - Low On-Resistance - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - Fast Switching Speed - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** - **Halogen and Antimony Free. “Green” Device (Note 3)** ## **Description** This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ## **Applications** - Motor Control - Power Management Functions - DC-DC Converters - **Qualified to AEC-Q101 standards for High Reliability** ## **Mechanical Data** - Case: TSOT26 - Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminals Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 - Terminal Connections Indicator: See diagram - Backlighting Weight: 0.013 grams (approximate) **==> picture [452 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> Q1 Q2<br>D1 D2<br>TSOT26<br>G1 1 6 D1<br>G1 G2<br>S2 2 5 S1<br>G2 3 4 D2<br>e e<br>S1 S2<br>Top View<br>Top View Pin Configuration N-Channel P-Channel<br>g Information Information (Note 4)<br>Part Number Compliance Case Packaging<br>DMC2038LVT-7 Standard TSOT26 3000/Tape & Reel<br>DMC2038LVTQ-7 Automotive TSOT26 3000/Tape & Reel<br>**----- End of picture text -----**<br> ## **Ordering Information Information** (Note 4) - Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. - 4 . For packaging details, go to our website at http://www.diodes.com/products/packages.html ## **Marking Information** **==> picture [524 x 107] intentionally omitted <==** **----- Start of picture text -----**<br> 31C = Product Type Marking Code<br>31C YM = Date Code Marking<br>Y = Year (ex: X = 2010)<br>M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2010 2011 2012 2013 2014 2015 2016<br>—————ee Code X Y Z A B C D<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>[I Code 1 2 3 4 5 6 7 8 9 O N D<br>YM<br>**----- End of picture text -----**<br> 1 of 10 **www.diodes.com** DMC2038LVT Document number: DS35417 Rev. 6 - 2 September 2013 © Diodes Incorporated **DMC2038LVT** ## **Maximum Ratings N-CHANNEL – Q1** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratingsgss** **N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---| ||||||| |**Characteristic**|||**Symbol**|**Value**|**Units**| |Drain-Source Voltage|||VDSS|20|V| |Gate-Source Voltage|||VGSS|±12|V| |Continuous Drain Current (Note 5) VGS= 4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|3.7<br>3.0|A| ||t<10s|TA= +25°C<br>TA= +70°C|ID|4.1<br>3.2|A| |Continuous Drain Current (Note 6) VGS= 4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|4.5<br>3.6|A| ||t<10s|TA= +25°C<br>TA= +70°C|ID|5.2<br>4.2|A| |Maximum Continuous Body Diode Forward Current (Note 6)|||IS|1.5|A| |Pulsed Drain Current (10µs pulse, duty cycle = 1%)|||IDM|25|A| ## **Maximum Ratings P-CHANNEL – Q2** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratingsgss** **P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---| ||||||| |**Characteristic**|||**Symbol**|**Value**|**Units**| |Drain-Source Voltage|||VDSS|-20|V| |Gate-Source Voltage|||VGSS|±12|V| |Continuous Drain Current (Note 5) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-2.6<br>-2.1|A| ||t<10s|TA= +25°C<br>TA= +70°C|ID|-2.9<br>-2.4|A| |Continuous Drain Current (Note 6) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-3.1<br>-2.5|A| ||t<10s|TA= +25°C<br>TA= +70°C|ID|-3.8<br>-3.0|A| |Maximum Continuous Body Diode Forward Current (Note 6)|||IS|-1.5|A| |Pulsed Drain Current (10µs pulse, duty cycle = 1%)|||IDM|-17|A| **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) |**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---| |||||| |**Characteristic**||**Symbol**|**Value**|**Units**| |Total Power Dissipation (Note 5)|TA= +25°C|PD|0.8|W| ||TA= +70°C||0.5|| |Thermal Resistance, Junction to Ambient (Note 5)|SteadyState|RJA|168|°C/W| ||t<10s||120|| |Total Power Dissipation (Note 6)|TA= +25°C|PD|1.1|W| ||TA= +70°C||0.7|| |Thermal Resistance, Junction to Ambient (Note 6)|SteadyState|RθJA|114|°C/W| ||t<10s||72|| |Thermal Resistance, Junction to Case (Note 6)||RθJC|39|| |Operating and Storage Temperature Range||TJ,TSTG|-55 to +150|°C| Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 2 of 10 **www.diodes.com** DMC2038LVT Document number: DS35417 Rev. 6 - 2 September 2013 © Diodes Incorporated **DMC2038LVT** ## **Electrical Characteristics N-CHANNEL – Q1** (@TA = +25°C, unless otherwise specified.) |**Electrical Characteristics** **N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---|---| |||||||| |**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**| |**OFF CHARACTERISTICS(Note 7) **||||||| |Drain-Source Breakdown Voltage|BVDSS|20|—|—|V|VGS= 0V, ID= 250μA| |Zero Gate Voltage Drain Current@Tc= +25°C|IDSS|—|—|1.0|μA|VDS=16V, VGS= 0V| |Gate-Source Leakage|IGSS|—|—|±100|nA|VGS= ±12V, VDS= 0V| |**ON CHARACTERISTICS(Note 7)**||||||| |Gate Threshold Voltage|VGS(th)|0.4|—|1.0|V|VDS= VGS, ID= 250μA| |Static Drain-Source On-Resistance<br>~~===.~~|RDS (ON)<br>~~===.~~|—<br>~~===.~~|27<br>~~===.~~|35<br>~~===.~~|mΩ<br>~~===.~~|VGS= 4.5V, ID= 4.0A<br>~~===.~~| |||—<br>~~===.~~|33<br>~~===.~~|43<br>~~===.~~||VGS= 2.5V, ID= 2.5A<br>~~===.~~| |||—<br>~~===.~~|43<br>~~===.~~|56<br>~~===.~~||VGS= 1.8V, ID= 1.5A<br>~~===.~~| |Forward Transfer Admittance<br>~~===.~~||Yfs|<br>~~===.~~|—<br>~~===.~~|9<br>~~===.~~|—<br>~~===.~~|S<br>~~===.~~|VDS= 5V, ID= 3.4A<br>~~===.~~| |Diode Forward Voltage|VSD|0.4|—|1.1|V|VGS= 0V, IS= 1A| |**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~a~~||||||| |Input Capacitance<br>~~————~~|Ciss<br>~~————~~<br>~~a~~|—<br>~~————~~<br>~~a~~|400<br>~~————~~<br>~~a~~|530<br>~~————~~|pF<br>~~————~~|VDS= 10V, VGS= 0V,<br>f = 1.0MHz<br>~~————~~| |Output Capacitance<br>~~————~~|Coss<br>~~————~~<br>~~a~~|—<br>~~————~~<br>~~a~~|70<br>~~————~~<br>~~a~~|90<br>~~————~~|pF<br>~~————~~|| |Reverse Transfer Capacitance<br>~~————~~|Crss<br>~~————~~<br>~~a~~|—<br>~~————~~<br>~~a~~|65<br>~~————~~<br>~~a~~|100<br>~~————~~|pF<br>~~————~~|| |Gate Resistance<br>~~————~~|Rg<br>~~————~~<br>~~a~~|—<br>~~————~~<br>~~a~~|1.9<br>~~————~~<br>~~a~~|—<br>~~————~~|Ω<br>~~————~~|VDS= 0V, VGS= 0V, f = 1MHz<br>~~————~~| |Total Gate Charge(VGS= 4.5V)|Qg<br>~~a~~|—<br>~~a~~|5.7<br>~~a~~|—|nC|VDS= 15V,ID= 5.8A| |Total Gate Charge(VGS= 10V)|Qg|—|12|17|nC|| |Gate-Source Charge|Qgs|—|0.7|—|nC|| |Gate-Drain Charge|Qgd|—|1.4|—|nC|| |Turn-On Delay Time|tD(on)|—|5|10|ns|VDS= 10V, VGS= 4.5V,<br>RG= 6Ω, IDS= 1A,| |Turn-On Rise Time|tr|—|8|16|ns|| |Turn-Off Delay Time|tD(off)|—|25|40|ns|| |Turn-Off Fall Time|tf|—|8|16|ns|| Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. **==> picture [471 x 219] intentionally omitted <==** **----- Start of picture text -----**<br> 30 20<br>VGSV=4.5VGS=10V = VDS= 5.0V TA = -55C / TA = 85C<br>25<br>VGS=4.0V VGS=3.0V 15 TA = 150C<br>20 VGS=3.5V VGS=2.5V TA = 25C TA = 125C<br>15 10<br>pi<br>VGS=2.0V<br>10<br>5<br>5 oalee aoe<br>VGS=1.5V<br>0 L-—- 0 J<br>0 0.5 1 1.5 2 0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN -SOURCE VOLTAGE(V) VGS, GATE SOURCE VOLTAGE(V)<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics<br>, DRAIN CURRENT (A)ID , DRAIN CURRENT (A)ID<br>**----- End of picture text -----**<br> 3 of 10 **www.diodes.com** DMC2038LVT Document number: DS35417 Rev. 6 - 2 September 2013 © Diodes Incorporated **DMC2038LVT** **==> picture [482 x 676] intentionally omitted <==** **----- Start of picture text -----**<br> 0.08 0.08<br>VGS= 4.5V<br>0.07<br>TA = 150C<br>0.06 ia 0.06 TA = 125C<br>0.05 V GS = 1.8V<br>0.04 0.04<br>VGS = 2.5V TA = 85C<br>a<br>0.03 VGS = 4.5V TA = 25C<br>oer<br>0.02 0.02<br>or ==<br>TA = -55C<br>0.01<br>0 | ff 0<br>0 5 10 15 20 0 4 8 12 16 20<br>ID, DRAIN SOURCE CURRENT ID, DRAIN SOURCE CURRENT (A)<br>Fig. 3 Typical On-Resistance vs. Fig. 4 Typical On-Resistance vs.<br>Drain Current and Gate Voltage Drain Current and Temperature<br>1.7 0.06<br>1.5 0.05 V GS =5V<br>iL we ID=5A<br>1.3 0.04<br>OK tid pe<br>1.1 0.03 V GS =10V<br>ID=10A<br>0.9 0.02<br>EBzan aan<br>0.7 Tlie 0.01 ERRREEEE<br>0.5 0<br>-50 PTET -25 0 25 TELL 50 75 100 125 150 -50 PTET -25 0 25 50 EEL 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>1.5 20<br>18<br>16 SeS0Ge000r0<br>1 TTT 14 TOT TA= 25C<br>12<br>ID=1mA<br>10<br>ee Coe<br>8<br>0.5 SS Coo<br>—— 6 Seeeee0 4008<br>ID=250µA<br>4<br>2 COA<br>0 YP 0 CCECCEA AYACe<br>-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1 1.2 1.4<br>TA, AMBIENT TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>) )<br>,DRAIN-SOURCE ON-RESISTANCE( , DRAIN-SOURCE ON-RESISTANCE(<br>DS(ON) DS(ON)<br>R R<br>)<br>(Normalized)<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, GATE THRESHOLD VOLTAGE(V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br> 4 of 10 DMC2038LVT Document number: DS35417 Rev. 6 - 2 September 2013 © Diodes Incorporated **www.diodes.com** **DMC2038LVT** [| ## 'n COR PORATED LIDS. **==> picture [210 x 432] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>f = 1MHz<br>C ISS<br>100<br>COSS<br>C RSS<br>10<br>0 5 10 15 20<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Typical Junction Capacitance<br>100<br>a OO 0 OO<br>RDS(on)<br>Limited<br>10 etreataNeilAcari ENSen<br>[IRSA NoPot Ty<br>pt DC SRN SEESMal<br>1 —Poa ORAL| PW = 10sP W = 1s ISAAK| [SANA][NT]<br>[| P W = 100ms NQANGEASNEEE<br>P W = 10ms<br>0.1 pt TJ(max) = 150°C | PW P = 1ms W = 100µs NWNSO MaalEl<br>TA = 25°C<br>VGS = 10V a ee<br>Single Pulse<br>0.01 DUT on 1 * MRP Board im<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 11 SOA, Safe Operation Area<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> **==> picture [208 x 209] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>8<br>VDS=15V<br>6<br>4<br>2<br>0<br>0 2 4 6 8 10 12 14<br>Qg, TOTAL GATE CHARGE (nC)<br>Fig. 10 Gate-Charge Characteristics<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br> **==> picture [397 x 208] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>Fe D = 0.7 rr<br>ce D = 0.5 eci emma ce<br>D = 0.3<br>FH Lee TTT<br>0.1 I I 7M70TeLLM TE<br>EEE D = 0.1 ER agp D = 0.9<br>= EEEt<br>D = 0.05 A ITIL<br>FT tt HH<br>HH ft OP}<br>D = 0.02<br>ITT TTT TITTY TT<br>0.01 PEEe D = 0.01 [Tr] aC ELITAIM AAUTTT CLAIMETIeeLETTETIME EETETT LEI<br>ee D = 0.005 ee A RJA(t) = r(t) * RJA<br>Fo ZTee tT R JA = 164°C/W TTTPOT<br>Duty Cycle, D = t1/ t2<br>Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIMES (sec)<br>Fig. 12 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> 5 of 10 DMC2038LVT Document number: DS35417 Rev. 6 - 2 September 2013 © Diodes Incorporated **www.diodes.com** **DMC2038LVT** **Electrical Characteristics P-CHANNEL – Q2** (@TA = +25°C, unless otherwise specified.) |**Electrical Characteristics** **P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---|---| |||||||| |**Characteristic**<br>~~_—S==-e=——~~|**Symbol**<br>~~_—S==-e=——~~|**Min**<br>~~_—S==-e=——~~|**Typ **<br>~~_—S==-e=——~~|**Max**<br>**Unit**<br>~~_—S==-e=——~~|**Unit**<br>~~_—S==-e=——~~|**Test Condition**<br>~~_—S==-e=——~~| |**OFF CHARACTERISTICS(Note 7) **<br>~~_—S==-e=——~~||||||| |Drain-Source Breakdown Voltage<br>~~_—S==-e=——~~|BVDSS<br>~~_—S==-e=——~~|-20<br>~~_—S==-e=——~~|—<br>~~_—S==-e=——~~|—<br>~~_—S==-e=——~~|V<br>~~_—S==-e=——~~|VGS= 0V, ID= -250μA<br>~~_—S==-e=——~~| |Zero Gate Voltage Drain Current@Tc= +25°C<br>~~_—S==-e=——~~|IDSS<br>~~_—S==-e=——~~|—<br>~~_—S==-e=——~~|—<br>~~_—S==-e=——~~|-1.0<br>~~_—S==-e=——~~|μA<br>~~_—S==-e=——~~|VDS= -16V, VGS= 0V<br>~~_—S==-e=——~~| |Gate-Source Leakage<br>~~_—S==-e=——~~<br>~~ee~~|IGSS<br>~~_—S==-e=——~~<br>~~ee~~|—<br>~~_—S==-e=——~~<br>~~ee~~|—<br>~~_—S==-e=——~~<br>~~ee~~|±100<br>~~_—S==-e=——~~<br>~~ee~~|nA<br>~~_—S==-e=——~~<br>~~ee~~|VGS= ±12V, VDS= 0V<br>~~_—S==-e=——~~<br>~~ee~~| |**ON CHARACTERISTICS(Note 7) **<br>~~_—S==-e=——~~<br>~~ee~~||||||| |Gate Threshold Voltage<br>~~ee~~|VGS(th)<br>~~ee~~|-0.4<br>~~ee~~<br>~~——~~|—<br>~~ee~~<br>~~——~~|-1.0<br>~~ee~~<br>~~—— 2~~|V<br>~~ee~~<br>~~2~~|VDS= VGS, ID= -250A<br>~~ee~~<br>~~2~~| |Static Drain-Source On-Resistance<br>~~i~~|RDS (ON)<br>~~i~~<br>~~a~~|—<br>~~i~~<br>~~——~~|57<br>~~i~~<br>~~——~~|74<br>mΩ<br>110<br>168<br>~~i~~<br>~~—— 2~~|mΩ<br>~~i~~<br>~~2~~|VGS= -4.5V, ID= -3.0A<br>~~i~~<br>~~2~~| |||—<br>~~i~~<br>~~——~~<br>~~a~~|76<br>~~i~~<br>~~——~~|||VGS= -2.5V, ID= -1.5A<br>~~i~~<br>~~2~~| |||—<br>~~i~~<br>~~——~~<br>~~a~~|102<br>~~i~~<br>~~——~~|||VGS= -1.8V, ID= -1.0A<br>~~i~~<br>~~2~~| |Forward Transfer Admittance<br>~~es~~||Yfs|<br>~~es~~<br>~~a~~|—<br>~~——~~<br>~~es~~<br>~~a~~|10<br>~~——~~<br>~~es~~|—<br>~~—— 2~~<br>~~es~~|S<br>~~2~~<br>~~es~~|VDS= -5V, ID= -3.0A<br>~~2~~<br>~~es~~| |Diode Forward Voltage<br>~~es~~|VSD<br>~~es~~<br>~~a~~|—<br>~~es~~<br>~~a~~|-0.8<br>~~es~~|-1.0<br>~~es~~|V<br>~~es~~|VGS= 0V, IS= -0.6A<br>~~es~~| |**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~a~~<br>~~eeeeee~~||||||| |Input Capacitance<br>~~————~~|Ciss<br>~~————~~<br>~~ee~~|—<br>~~————~~<br>~~ee~~|530<br>~~————~~<br>~~ee~~|705<br>~~————~~<br>~~ee~~|pF<br>~~————~~<br>~~ee~~|VDS= -10V, VGS= 0V,<br>f = 1.0MHz<br>~~————~~| |Output Capacitance<br>~~————~~|Coss<br>~~————~~<br>~~ee~~|—<br>~~————~~<br>~~ee~~|70<br>~~————~~<br>~~ee~~|95<br>~~————~~<br>~~ee~~|pF<br>~~————~~<br>~~ee~~|| |Reverse Transfer Capacitance<br>~~————~~|Crss<br>~~————~~<br>~~ee~~|—<br>~~————~~<br>~~ee~~|60<br>~~————~~<br>~~ee~~|90<br>~~————~~<br>~~ee~~|pF<br>~~————~~<br>~~ee~~|| |Gate Resistance|Rg<br>~~ee~~|—<br>~~ee ~~|72<br> ~~ee ~~|-<br> ~~ee~~|Ω<br>~~ee~~|VDS= 0V, VGS= 0V, f = 1MHz| |Total Gate Charge(VGS= -4.5V)|Qg|—|7|10|nC|VDS= -15V,ID= -6A<br>~~ee~~| |Total Gate Charge(VGS= -10V)|Qg|—|14|—|nC|| |Gate-Source Charge|Qgs|—|0.95|—|nC|| |Gate-Drain Charge<br>~~————~~|Qgd<br>~~————~~|—|1.2|—<br>~~ee~~|nC<br>~~ee~~|| |Turn-On Delay Time<br>~~————~~|tD(on)<br>~~————~~|—|11|20<br>~~ee~~|nS<br>~~ee~~|VDS= -10V, VGS= -4.5V,<br>RG= 6Ω, IS= -1A,<br>~~ee~~| |Turn-On Rise Time<br>~~————~~|tr<br>~~————~~|—|12|22<br>~~ee~~|nS<br>~~ee~~|| |Turn-Off Delay Time<br>~~————~~|tD(off)<br>~~————~~|—|21|34<br>~~ee~~|nS<br>~~ee~~|| |Turn-Off Fall Time<br>~~————~~|tf<br>~~————~~|—|13|23<br>~~ee~~|nS<br>~~ee~~|| **==> picture [470 x 219] intentionally omitted <==** **----- Start of picture text -----**<br> 20 20<br>-VGS=10V<br>-VGS=4.5V<br>15 -V GS =4.0V -VGS=3.0V 15<br>10 -V GS =3.5V -V GS =2.5V 10<br>br<br>5 -VGS=2.0V 5<br>-VGS=1.5V<br>0 feL— 0 ALLELWLLL<br>0 0.5 1 1.5 2 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>-VDS, DRAIN -SOURCE VOLTAGE(V) -VGS, GATE SOURCE VOLTAGE(V)<br>Fig. 13 Typical Output Characteristics Fig. 14 Typical Transfer Characteristics<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>-ID I-D<br>**----- End of picture text -----**<br> 6 of 10 **www.diodes.com** DMC2038LVT Document number: DS35417 Rev. 6 - 2 September 2013 © Diodes Incorporated **DMC2038LVT** **==> picture [484 x 673] intentionally omitted <==** **----- Start of picture text -----**<br> 0.16 0.20<br>VGS= 4.5V<br>0.18<br>0.16<br>[ATT]/ GREREa<br>0.12<br>VGS = -1.8V 0.14 TA = 150C<br>VGS = -2.5V 0.12 TA = 125C<br>peer Pp | |<br>0.08 0.1<br>| | EFPoe<br>ee 0.08 SS<br>VGS = -4.5V TA = 85C<br>0.04 —TT| 0.06 EEE TA = 25C<br>0.04<br>0.02 TA = -55C<br>0 Pitt 0 ——ERE<br>0 5 10 15 20 0 | | 4 8 12 16 20<br>-ID, DRAIN SOURCE CURRENT -ID, DRAIN SOURCE CURRENT (A)<br>Fig. 15 Typical On-Resistance vs. Fig. 16 Typical On-Resistance vs.<br>Drain Current and Gate Voltage Drain Current and Temperature<br>1.7 tT Le 1 0.140.12 TTT TT<br>1.5<br>1.3 0.1 -V-IDGS=5A=5V<br>LTT ee 0.08 Saeeeeee<br>1.1<br>0.06<br>-VGS=10V<br>0.9 ee -ID=10A<br>ae an 0.04 as<br>Titi aon<br>0.7 a See<br>0.5 PT LEL EEL 0.020 CCE<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 17 On-Resistance Variation with Temperature Fig. 18 On-Resistance Variation with Temperature<br>1.5 20<br>18<br>16 TLE TTL ETA<br>1 TTL y yy 14 TLE TTT YE<br>12<br>aa 10 ELE ELL | pee ZT<br>8<br>0.5 aaE TTTsrstrenecatse ETT EEA |<br>6<br>SS SUSSRRn0/ 00000<br>‘or2840) 4 TET ETT ATT TT<br>2<br>0 Hr 0 TELLTALE Sense ZanaLL<br>-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6<br>TA, AMBIENT TEMPERATURE (°C) -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 19 Gate Threshold Variation vs. Ambient Temperature Fig. 20 Diode Forward Voltage vs. Current<br>)<br>, DRAIN-SOURCE ON-RESISTANCE(<br>DS(ON)<br>R<br>)<br>(Normalized)<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>S<br>, GATE THRESHOLD VOLTAGE(V) -I<br>GS(TH)<br>-V<br>**----- End of picture text -----**<br> 7 of 10 DMC2038LVT Document number: DS35417 Rev. 6 - 2 September 2013 © Diodes Incorporated **www.diodes.com** **DMC2038LVT** [ ## 1 Nn C QO R PORATED LIDS. **==> picture [470 x 215] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 10<br>f = 1MHz<br>CISS<br>8<br>6<br>100 Qg vs. VGS<br>COSS<br>4<br>C RSS<br>2<br>EPZnREEE<br>10 0<br>0 2 4 6 8 10 12 14 16<br>0 5 10 15 20<br>-VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 22 Gate-Charge CharacteristicsQg, TOTAL GATE CHARGE (nC)<br>Fig. 21 Typical Junction Capacitance<br>, GATE-SOURCE VOLTAGE (V)<br>, JUNCTION CAPACITANCE (pF) GS<br>CT -V<br>**----- End of picture text -----**<br> **==> picture [209 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>Po<br>10 R DS(on)<br>ag Limited eae MT<br>FI<br>TENENET aN Eo<br>REA<br>1 DC<br>PW = 10s<br>re ee | P W = 1s fy NSE) SU BN<br>PW = 100ms<br>[tt PW = 10ms INNMaal<br>0.1 TJ(max) = 150°C H PW = 1ms SOEFASS EEEErEH<br>TA = 25°C a— PW = 100µs 4 LINASiS oePTeeeTTT)<br>VGS = -10V a<br>Single Pulse<br>DUT on 1 * MRP Board<br>0.01 rrCi<br>0.1 1 10 100<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 23 SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br> **==> picture [397 x 208] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>Cte D = 0.7D = 0.5 aortt ett<br>TT a ee<br>TTT nr TTS<br>D = 0.3<br>FeTTo TT<br>0.1<br>D = 0.1 D = 0.9<br>BE eaeATU ETI ETL EUTNIIE LLT<br>= EH Eoet<br>D = 0.05 Toa<br>OS eee 0009”,<br>D = 0.02<br>ATCTHIMMITMTTAITN T<br>0.01 PT ee | TIM LUTTE LTTE TT TM Ll<br>D = 0.01<br>EO ITE LIM TINIE ITT<br>Saeeas D = 0.005 He TTTee RJA(t) = r(t) * RJA TTT<br>Fo assZAceanear| R JA = 164°C/W CTH<br>Duty Cycle, D = t1/ t2<br>Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIMES (sec)<br>Fig. 24 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> 8 of 10 DMC2038LVT Document number: DS35417 Rev. 6 - 2 8 of 10 September 2013 **www.diodes.com** © Diodes Incorporated **DMC2038LVT** ## **Package Outline Dimensions** Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. **==> picture [361 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>TSOT26<br>e1<br>Dim Min Max Typ<br>A 1.00 <br>Err: ===<br>A1 0.01 0.10 <br>A2 0.84 0.90 <br>E1 E<br>D 2.85 2.95 2.90<br>c L2 E 2.70 2.90 2.80<br>E1 1.55 1.65 1.60<br><br>L b 0.30 0.45 <br>tl e ie 4x1 c 0.12 0.20 <br>6x b<br>e BSC BSC 0.95<br>e1 BSC BSC 1.90<br>A A2 L 0.30 0.50<br>L2 BSC BSC 0.25<br>A1 θ 0° 8° 4°<br>(ERE ae θ1 4° 12° <br>All Dimensions in mm<br>**----- End of picture text -----**<br> ## **Suggested Pad Layout** Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. |Y1<br>C<br>C<br>X (6x)<br>Y (6x)<br>~~a~~m~~in~~<br>~~fi~~ ~~OO~~|**Dimensions**<br>**C**<br>**X**<br>**Y**<br>**Y1**||**Value(in mm)**<br>0.950<br>0.700<br>1.000<br>3.199| |---|---|---|---| 9 of 10 **www.diodes.com** DMC2038LVT Document number: DS35417 Rev. 6 - 2 September 2013 © Diodes Incorporated **DMC2038LVT** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. ## **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: - A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2013, Diodes Incorporated **www.diodes.com** 10 of 10 **www.diodes.com** DMC2038LVT Document number: DS35417 Rev. 6 - 2 September 2013 © Diodes Incorporated
Updated at June 9, 2026
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