Image not available
Illustrative purposes only
DMC2020USD-13
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 7.8 A, 7.8 A, 0.02 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.8W
- Power Dissipation P Channel: 1.8W
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 7.8A
- Continuous Drain Current Id P Channel: 7.8A
- Drain Source On State Resistance N Channel: 0.02ohm
- Drain Source On State Resistance P Channel: 0.033ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.247 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**DMC2020USD**
## **20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET**
## **Product Summary**
|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|---|
|||||
|**Device**|**V(BR)DSS**|**RDS(on)**max|**ID Max**<br>**TA = +25****C**|
|Q1|20V|20m@ VGS= 4.5V|8.5A|
|||28m@ VGS= 2.5V|7.2A|
|Q2|-20V|33m@ VGS= -4.5V|-6.8A|
|||45m@ VGS= -2.5V|-5.8A|
## **Description and Applications**
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Motor control
- DC-DC Converters
- Power management functions
## **Features and Benefits**
- Reduced footprint with two discretes in a single SO8
- Low gate drive
- Low input capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- **ESD Protected up to 2kV**
- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)**
- **Halogen and Antimony Free. “Green” Device (Note 3)**
- **For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at**
-
- **https://www.diodes.com/products/automotive/automotive products/.**
- **This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/**
- Notebook Computers and Printers
## **Mechanical Data**
- Case: SO-8
- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals Connections: See Diagram
- Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 **e3**
- Weight: 0.074 grams (approximate)
**==> picture [521 x 120] intentionally omitted <==**
**----- Start of picture text -----**<br>
Drain Drain<br>SO-8<br>S1 D1<br>Body Body<br>Diode Diode<br>G1 D1 Gate Gate<br>S2 D2 Gate Gate<br>Protection Source Protection Source<br>Diode Diode<br>G2 D2 Q1 N-Channel Q2 P-Channel<br>ESD PROTECTED TO 2kV Top View Top View Equivalent Circuit<br>**----- End of picture text -----**<br>
## **Ordering Information** (Note 4)
|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|---|---|
||||||
|**Product**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|DMC2020USD-13|C2020UD|13|12|2,500|
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
## **Marking Information**
**==> picture [216 x 59] intentionally omitted <==**
**----- Start of picture text -----**<br>
C2020UD C2020UD<br>YY WW YY WW<br>DMC2020USD<br>Document number: DS32121 Rev. 6 - 2<br>**----- End of picture text -----**<br>
= Manufacturer’s Marking C2022UD = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 14 = 2014) WW = Week (01 - 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1 of 11 **www.diodes.com**
April 2020 © Diodes Incorporated
**DMC2020USD**
## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.)
**Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Units** Drain-Source Voltage VDSS 20 -20 V ~~a~~ Gate-Source Voltage VGSS 10 10 (Notes 6 & 8) 8.5 -6.8 TA = 70°C (Notes 6 & 8) 6.8 -5.4 Continuous Drain Current VGS = 4.5V ID (Notes 5 & 8) 6.5 -5.2 (Notes 5 & 9) 7.8 -6.3 A ~~a~~ Pulsed Drain Current VGS = 4.5V (Notes 7 & 8) IDM 33.6 -26.8 Continuous Source Current (Body diode) (Notes 6 & 8) IS 4.0 -4.0 ~~ee~~ Pulsed Source Current (Body diode) (Notes 7 & 8) ISM 33.6 -26.8
## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)
|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**||**Symbol**|**N-Channel - Q1**|**P-Channel - Q2**|**Unit**|
|Power Dissipation<br>Linear Derating Factor|(Notes 5 & 8)|PD|1.25<br>10||W<br>mW/C|
||(Notes 5 & 9)||1.8<br>14.3|||
||(Notes 6 & 8)||2.14<br>17.2|||
|Thermal Resistance, Junction to Ambient|(Notes 5 & 8)|RθJA|100||°C/W|
||(Notes 5 & 9)||70|||
||(Notes 6 & 8)||58|||
|Thermal Resistance, Junction to Lead|(Notes 8 & 10)|RθJL|51|||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150||°C|
Notes: 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition.
6. Same as note (2), except the device is measured at t 10 sec.
7. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs.
8. For a dual device with one active die.
9. For a device with two active die running at equal power.
10. Thermal resistance from junction to solder-point (at the end of the drain lead).
2 of 11 **www.diodes.com**
DMC2020USD Document number: DS32121 Rev. 6 - 2
April 2020 © Diodes Incorporated
**DMC2020USD**
**Thermal Characteristics**
**==> picture [442 x 362] intentionally omitted <==**
**----- Start of picture text -----**<br>
R DS(ON) ee a RDS(ON)<br>10 Pea, Limited Sn SB 10 pSfe Limited an,eeee SB<br>1 ae DC ea, Sa SS 1 ae, DC Sa SE<br>1s 1s<br>; 100ms ee || ; 100ms ee ||<br>100m 10ms 100m 10ms<br>1ms 1ms<br>ee= SinT amb g= 25le Pulse o C |ee— a“ 100us oeie== ee Single PulseT amb = 25oC ———2a || 100us eeI~]oeie<br>10m One active die 10m One active die<br>EE li<br>0.1 1 10 0.1 1 10<br>VDS Drain-Source Voltage (V) -VDS Drain-Source Voltage (V)<br>N-channel Safe Operating Area P-channel Safe Operating Area<br>2.0<br>100 25 mm x 25 mm 25 mm x 25 mm<br>1oz FR4 LiLoTAT TTTTT TI 1oz FR4<br>80 One active die eri 1.5 PN Two active die<br>A ge A NN<br>eS PUN ||<br>60 D=0.5 One active die<br>Pe OF | 1.0 rT XK<br>eeeT NK<br>40<br>ELAR 7 NN<br>D=0.2 Single Pulse<br>0.5<br>eee ll PR Ra<br>20 D=0.05<br>OG Il PN A<br>0 eeeHciSoCIN D=0.1 Ti 0.0 peSX<br>100μ 1m 10m 100m 1 10 100 1k 0 25 50 75 100 125 150<br>Pulse Width (s) Temperature (oC)<br>Transient Thermal Impedance Derating Curve<br> Drain Current (A)ID Drain Current (A)-ID<br>C/W)<br>o<br>Thermal Resistance (<br> Max Power Dissipation (W)<br>**----- End of picture text -----**<br>
**==> picture [219 x 144] intentionally omitted <==**
**----- Start of picture text -----**<br>
Single Pulse<br>100 aHD, a T amb = 25oC |HH<br>Se Hit<br>One active die<br>SEaesis anh Seeeel aa | 25 mm x 25 mm q<br>CT SE II<br>CHT 1oz FR4<br>10 UUM LTA TST UTI LITA<br>a,| |<br>TT TT<br>80<br>1 PUIITlk it (cco<br>100μ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s)<br>Maximum Power (W)<br>**----- End of picture text -----**<br>
**Pulse Power Dissipation**
3 of 11 **www.diodes.com**
DMC2020USD Document number: DS32121 Rev. 6 - 2
April 2020 © Diodes Incorporated
**DMC2020USD**
|**Electrical Characteristics – Q1 N-CHANNEL**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q1 N-CHANNEL**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q1 N-CHANNEL**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q1 N-CHANNEL**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q1 N-CHANNEL**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q1 N-CHANNEL**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q1 N-CHANNEL**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q1 N-CHANNEL**(@TA= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|---|
|||||||||
|**Characteristic**<br>~~nD~~|**Symbol**<br>~~nD~~<br>~~I~~|**Min**<br>~~nD~~<br>~~OD~~|**Typ **<br>~~nD~~<br>~~(OO~~|**Max**<br>~~nD~~<br>~~(OU~~|**Unit**<br>~~nD~~<br>~~(OO~~|**Test Condition**<br>~~nD~~<br>~~(OO~~||
|**OFF CHARACTERISTICS**<br>~~I OD (OO~~<br>~~(OU~~<br>~~(OO~~<br>~~ee~~||||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|20<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= 250μA<br>~~ee~~||
|Zero Gate Voltage Drain Current<br>~~a~~|IDSS<br>~~a~~|—<br>~~a~~|—<br>~~a~~|1.0<br>~~a~~|A<br>~~a~~|VDS= 20V, VGS= 0V<br>~~a~~||
|Gate-Source Leakage<br>~~a~~|IGSS<br>~~a~~|—<br>~~a~~|—<br>~~a~~|±10<br>~~a~~|A<br>~~a~~|VGS= ±10V, VDS= 0V<br>~~a~~||
|**ON CHARACTERISTICS**<br>~~PyI~~<br>~~nD UNI~~||||||||
|Gate Threshold Voltage<br>~~a~~|VGS(th)<br>~~a~~<br>~~Py~~|0.5<br>~~a~~<br>~~I~~|1.1<br>~~a~~<br>~~nD UN~~|1.5<br>~~a~~<br>~~UN~~|V<br>~~a~~<br>~~I~~|VDS= VGS, ID= 250μA<br>~~a~~||
|Static Drain-Source On-Resistance (Note 11)<br>~~EE~~|RDS (ON)<br>~~Py ~~<br>~~EE~~|—<br> ~~I~~<br>~~EE~~|13<br>~~nD UN~~<br>~~EE~~|20<br>~~UN ~~<br>~~EE~~|mΩ<br> ~~I~~<br>~~EE~~<br>~~(OO~~|VGS= 4.5V, ID= 7A<br>~~EE~~||
||||18<br>~~EE~~|28<br>~~EE~~<br>~~(OUD~~||VGS= 2.5V, ID= 3A<br>~~EE~~<br>~~(OO~~||
|Forward Transfer Admittance (Notes 11 & 12)<br>~~(OD~~||Yfs|<br>~~(OD~~|—<br>~~(OD~~|16<br>~~(OD~~|—<br>~~(OD~~<br>~~(OUD~~|S<br>~~(OD~~<br>~~(OO~~|VDS= 5V, ID= 9.4A<br>~~(OD~~<br>~~(OO~~||
|Diode Forward Voltage (Note 11)<br>~~ee~~|VSD<br>~~ee~~|—<br>~~ee~~|0.7<br>~~ee~~|1.2<br>~~(OUD ~~<br>~~ee~~|V<br> ~~(OO~~<br>~~ee~~|VGS= 0V, IS= 1.3A<br>~~(OO~~<br>~~ee~~||
|Continuous Source Current<br>~~ee~~|IS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|1.8<br>~~ee~~|A<br>~~ee~~|—<br>~~ee~~||
|**DYNAMIC CHARACTERISTICS(Note 12)**<br>~~———~~<br>~~ee~~||||||||
|Input Capacitance<br>~~ns~~<br>~~a~~<br>~~———~~|Ciss<br>~~ns~~<br>~~ee~~|—<br>~~ns~~<br>~~ee~~|1149<br>~~ns~~<br>~~ee~~|—<br>~~ns~~<br>~~ee~~|pF<br>~~ee~~|VDS= 10V, VGS= 0V,<br>f = 1.0MHz||
|Output Capacitance<br>~~a~~<br>~~———~~|Coss<br>~~ee~~|—<br>~~ee~~|157<br>~~ee~~|—<br>~~ee~~||||
|Reverse Transfer Capacitance<br>~~a~~<br>~~———~~|Crss<br>~~ee~~|—<br>~~ee~~|142<br>~~ee~~|—<br>~~ee~~||||
|Gate Resistance<br>~~———~~|Rg<br>~~ee~~|—<br>~~ee~~|1.51<br>~~ee~~|—<br>~~ee~~|Ω<br>~~ee~~|VDS= 0V, VGS= 0V, f = 1MHz||
|Total Gate Charge (Note 13)<br>~~———~~|Qg<br>~~ee~~|—<br>~~ee~~|6.0<br>~~ee~~|—<br>~~ee~~|nC<br>~~ee~~<br>~~le~~|VGS= 2.5V|VDS= 10V<br>ID= 9.4A<br>~~le~~|
|Total Gate Charge (Note 13)<br>~~a~~|Qg<br>|—<br>|11.6<br>|—<br>||VGS= 4.5V<br>~~le~~||
|Gate-Source Charge (Note 13)<br>~~a~~|Qgs<br>|—<br>|2.7<br>|—<br>||||
|Gate-Drain Charge (Note 13)<br>~~aee~~|Qgd<br>~~ee~~|—<br>~~eee~~|3.4<br>~~eee~~|—<br>~~eee~~||||
|Turn-On Delay Time (Note 13)<br>~~ee~~|tD(on)<br>~~ee~~<br>~~ee~~|—<br>~~eee~~<br>~~eee~~|11.67<br>~~eee~~<br>~~eee~~|—<br>~~eee~~<br>~~eee~~||||
|Turn-On Rise Time (Note 13)<br>~~ee~~<br>~~es~~|tr<br>~~ee ~~<br>~~es~~<br>~~ee~~|—<br> ~~eee~~<br>~~es~~<br>~~eee~~|12.49<br>~~eee~~<br>~~es~~<br>~~eee~~|—<br>~~eee~~<br>~~es~~<br>~~eee~~|ns<br>~~es~~<br>~~le~~|VGS= 4.5V, VDS= 10V,<br>RG= 6Ω,ID= 1A<br>~~es~~<br>~~le~~||
|Turn-Off DelayTime (Note 13)<br>~~es~~|tD(off)<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~eee~~|35.89<br>~~es~~<br>~~eee~~|—<br>~~es~~<br>~~eee~~||||
|Turn-Off Fall Time (Note 13)<br>~~es~~|tf<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~eee~~|12.33<br>~~es~~<br>~~eee~~|—<br>~~es~~<br>~~eee~~||||
13. Switching characteristics are independent of operating junction temperatures.
4 of 11 **www.diodes.com**
DMC2020USD Document number: DS32121 Rev. 6 - 2
April 2020 © Diodes Incorporated
**DMC2020USD**
**Typical Characteristics – Q1 N-CHANNEL**
**==> picture [492 x 656] intentionally omitted <==**
**----- Start of picture text -----**<br>
30 20<br>VGS = 10V<br>25<br>VGS = 4.5V<br>x 15 V = 5V DS [<br>VGS = 4.0V<br>20 VGS = 3.5V<br>VGS = 3.0V<br>15 VGS = 2.5V 10<br>10 fF V GS = 2.0V y<br>T = 150°CA<br>5 T = 125°C A<br>5 T = 85°CA<br>T = 25°CA<br>VGS = 1.8V<br>T = -55°CA<br>0 f= 0 fs<br>0 y-——— 0.5 1 1.5 2 0 0.5 1 yr 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V) V , GATE SOURCE VOLTAGE (V)GS<br>Fig. 1 Typical Output Characteristics<br>Fig. 2 Typical Transfer Characteristics<br>0.04 0.04<br>V = 4.5VGS<br>0.03 0.03<br>0.02 0.02 T = 150°C A<br>VGS = 2.5V T = 125°CA<br>T = 85°CA<br>0.01 V GS = 4.5V 0.01 T = 25°CA<br>T = -55°CA<br>0 0<br>0 5 10 15 20 25 30 0 5 10 15 20<br>ID, DRAIN-SOURCE CURRENT (A) I , DRAIN CURRENT (A)D<br>Fig. 3 Typical On-Resistance Fig. 4 Typical Drain-Source On-Resistance<br>vs. Drain Current and Gate Voltage vs. Drain Current and Temperature<br>1.6 0.04<br>1.4<br>0.03<br>1.2 oY<br>0.02 V = 2.5VGSI = 5AD<br>1.0 V = 4.5V GS<br>I = 10AD<br>0.01 V = 4.5V GS<br>0.8 ee V GS = 2.5V r I = 10AD<br>I = 5AD<br>0.6 TEL ELE 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>T , JUNCTION TEMPERATURE (°C)J T , JUNCTION TEMPERATURE (°C)J<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>, DRAIN CURRENT(A)<br>ID<br>) Ω<br>DRAIN-SOURCE ON-RESISTANCE (<br>,<br>DS(ON)<br>R<br>) Ω<br>DRAIN-SOURCE ON-<br>,<br>DS(ON)<br>R RESISTANCE (NORMALIZED)<br>DRAIN-SOURCE ON-RESISTANCE (<br>,<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>
5 of 11 **www.diodes.com**
DMC2020USD Document number: DS32121 Rev. 6 - 2
April 2020 © Diodes Incorporated
**DMC2020USD**
**==> picture [219 x 663] intentionally omitted <==**
**----- Start of picture text -----**<br>
1.6<br>1.4<br>“TLE<br>1.2<br>1.0 I = 1mA D<br>SS<br>0.8 I = 250 µA D<br>0.6 OS<br>jy<br>0.4<br>CEE<br>0.2 CLEC<br>0 —CEELT<br>-50 -25 0 25 50 75 100 125 150<br>T , AMBIENT TEMPERATURE (°C)A<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature<br>10,000<br>f = 1MHz<br>OS<br>1,000<br>Ciss<br>Coss<br>100 Crss<br>SSS<br>10 FP | | ft ft<br>0 4 8 12 16 20<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Typical Capacitance<br>10<br>8 VDS = 10V<br>ID = 9.4A<br>6<br>4<br>2<br>0<br>0 5 10 15 20 25<br>Qg, OTAL GATE CHARGE (nC) [T]<br>Fig. 11 Gate-Source Voltage vs. Total Gate Charge<br>, ATE-SOURCE VOLTAGE (V)<br>V<br>G<br>GS<br>C, CAPACITANCE (pF)<br> GATE THRESHOLD VOLTAGE(V)GS(TH),<br>V<br>**----- End of picture text -----**<br>
**==> picture [223 x 442] intentionally omitted <==**
**----- Start of picture text -----**<br>
30 “TTI.<br>25<br>20 T = 25 °C A<br>ef<br>15<br>TCE<br>10 | ftle<br>5 TAT<br>|<br>0 tL<br>P|<br>0 0.2 0.4 0.6 0.8 1.0 1.2<br>V , SOURCE-DRAIN VOLTAGE (V)SD<br>Fig. 8 Diode Forward Voltage vs. Current<br>100,000 ————<br>10,000<br>1,000 T A= 150°C<br>T = 125°CA<br>100<br>10 T = 85 A °C<br>— T = 25°CA<br>1 ! |<br>0 5 10 15 20<br>V , DRAIN-SOURCE VOLTAGE (V) DS<br>Fig. 10 Typical Drain-Source Leakage Current<br>vs. Drain-Source Voltage<br> SOURCE CURRENT(A)IS,<br>DRAIN-SOURCE LEAKAGE CURRENT(nA)<br>IDSS,<br>**----- End of picture text -----**<br>
6 of 11 **www.diodes.com**
DMC2020USD Document number: DS32121 Rev. 6 - 2
April 2020 © Diodes Incorporated
**DMC2020USD**
|**Electrical Characteristics – Q2 P-CHANNEL**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q2 P-CHANNEL**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q2 P-CHANNEL**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q2 P-CHANNEL**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q2 P-CHANNEL**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q2 P-CHANNEL**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q2 P-CHANNEL**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q2 P-CHANNEL**(@TA= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|---|
|||||||||
|**Characteristic**<br>~~nD~~|**Symbol**<br>~~nD~~<br>~~I~~|**Min**<br>~~nD~~<br>~~OD~~|**Typ **<br>~~nD~~<br>~~(OO~~|**Max**<br>~~nD~~<br>~~(OU~~|**Unit**<br>~~nD~~<br>~~(OO~~|**Test Condition**<br>~~nD~~<br>~~(OO~~||
|**OFF CHARACTERISTICS**<br>~~I OD (OO~~<br>~~(OU~~<br>~~(OO~~<br>~~ee~~||||||||
|Drain-Source Breakdown Voltage<br>~~ee~~<br>~~a~~|BVDSS<br>~~ee~~<br>~~GD RD~~|-20<br>~~ee~~<br>~~RD~~|—<br>~~ee~~<br>~~ID~~|—<br>~~ee~~<br>~~UN~~|V<br>~~ee~~|VGS= 0V, ID= -250μA<br>~~ee~~||
|Zero Gate Voltage Drain Current<br>~~a~~|IDSS<br>~~GD RD~~<br>~~GD~~|—<br>~~RD~~<br>~~ID UD~~|—<br>~~ID~~<br>~~UD~~|-1.0<br>~~UN~~<br>~~(OUD~~|A<br>~~(OO~~|VDS= -20V, VGS= 0V<br>~~(OO~~||
|Gate-Source Leakage<br>~~a~~<br>~~rn~~|IGSS<br>~~GD RD~~<br>~~rn~~<br>~~GD~~|—<br>~~RD ~~<br>~~rn~~<br>~~ID UD~~|—<br> ~~ID ~~<br>~~rn~~<br>~~UD~~|±10<br> ~~UN~~<br>~~rn~~<br>~~(OUD~~|A<br>~~rn~~<br>~~(OO~~|VGS= ±8V, VDS= 0V<br>~~rn~~<br>~~(OO~~||
|**ON CHARACTERISTICS(Note 10) **<br>~~GD ID UD (OUD(OO~~<br>~~ee~~||||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(th)<br>~~ee~~|-0.4<br>~~ee~~|-0.7<br>~~ee~~|-1.0<br>~~ee~~|V<br>~~ee~~|VDS= VGS, ID= -250μA<br>~~ee~~<br>~~eee~~||
|Static Drain-Source On-Resistance (Note 14)<br>~~ee~~|RDS (ON)<br>~~ee~~|—<br>~~ee~~|26<br>~~ee~~|33<br>~~ee~~|mΩ<br>~~ee~~|VGS= -4.5V, ID= -6A<br>~~ee~~<br>~~eee~~||
||||33<br>~~ee~~|45<br>~~ee~~||VGS= -2.5V, ID= -3A<br>~~ee~~<br>~~eee~~||
|Forward Transfer Admittance (Note 14 & 15)<br>~~a~~||Yfs|<br>~~a~~|—<br>~~a~~|14<br>~~a~~|—<br>~~a~~|S<br>~~a~~|VDS= -5V, ID= -4A<br>~~eee~~<br>~~a~~||
|Diode Forward Voltage (Note 14)<br>~~a~~|VSD<br>~~a~~<br>~~PD~~|—<br>~~a~~<br>~~I~~|-0.7<br>~~a~~<br>~~nD~~|-1.0<br>~~a~~<br>~~I~~|V<br>~~a~~<br>~~I~~|VGS= 0V, IS= -1A<br>~~a~~||
|Continuous Source Current<br>~~a~~|IS<br>~~a~~<br>~~PD~~|—<br>~~a~~<br>~~I~~|—<br>~~a~~<br>~~nD~~|-1.8<br>~~a~~<br>~~I~~|A<br>~~a~~<br>~~I~~|-<br>~~a~~||
|**DYNAMIC CHARACTERISTICS(Note 15)**<br>~~PD I~~<br>~~nD I I~~<br>~~a~~<br>~~eee ee~~||||||||
|Input Capacitance<br>~~aes~~|Ciss<br>~~es~~|—<br>~~es~~<br>~~eee~~|1610<br>~~es~~<br>~~eee~~|—<br>~~es~~<br>~~eee ee~~|pF<br>~~es~~<br>~~ee~~|VDS= -10V, VGS= 0V,<br>f = 1.0MHz<br>~~es~~<br>~~ee~~||
|Output Capacitance<br>~~aes~~|Coss<br>~~es~~|—<br>~~es~~<br>~~eee~~|157<br>~~es~~<br>~~eee~~|—<br>~~es~~<br>~~eee ee~~||||
|Reverse Transfer Capacitance<br>~~es~~|Crss<br>~~es~~|—<br>~~es~~<br>~~eee~~|145<br>~~es~~<br>~~eee~~|—<br>~~es~~<br>~~eee ee~~||||
|Gate Resistance<br>~~———~~|Rg|—<br>~~eee~~|9.45<br>~~eee~~|—<br>~~eee ee~~<br>~~e~~|Ω<br>~~ee~~<br>~~e~~|VDS= 0V, VGS= 0V, f = 1MHz<br>~~ee~~<br>~~ee~~||
|Total Gate Charge (Note 16)<br>~~———~~|Qg|—|8.0|—<br>~~e~~|nC<br>~~e~~<br>~~ee~~|VGS= -2.5V<br>~~ee~~|VDS= -10V<br>ID= -4A<br>~~e~~<br>~~ee~~|
|Total Gate Charge (Note 16)<br>~~———~~|Qg|—|15.4|—<br>~~e~~||VGS= -4.5V<br>~~ee~~<br>~~ee~~||
|Gate-Source Charge (Note 16)<br>~~———~~|Qgs|—|2.5|—<br>~~e~~||||
|Gate-Drain Charge (Note 16)<br>~~———~~<br>~~————~~|Qgd|—|3.3|—<br>~~e~~<br>~~ee~~||||
|Turn-On DelayTime (Note 16)<br>~~———~~<br>~~nn~~<br>~~————~~|tD(on)<br>~~nn~~|—<br>~~nn~~|16.8<br>~~nn~~|—<br>~~e~~<br>~~nn~~<br>~~ee~~|ns<br>~~e~~<br>~~ee~~|VGS= -4.5V, VDS= -10V,<br>RG= 6Ω , ID= -1A<br>~~ee~~<br>~~ee~~||
|Turn-On Rise Time (Note 16)<br>~~|~~<br>~~————~~|tr|—|12.4|—<br>~~ee~~||||
|Turn-Off DelayTime (Note 16)<br>~~————~~|tD(off)|—|94.1|—<br>~~ee~~||||
|Turn-Off Fall Time (Note 16)<br>~~————~~|tf|—|42.4|—<br>~~ee~~||||
16. Switching characteristics are independent of operating junction temperatures.
7 of 11 **www.diodes.com**
DMC2020USD Document number: DS32121 Rev. 6 - 2
April 2020 © Diodes Incorporated
**DMC2020USD**
**==> picture [499 x 680] intentionally omitted <==**
**----- Start of picture text -----**<br>
Typical Characteristics – Q2 P-CHANNEL<br>30 20<br>VGS = -10V VGS = -3.5V V = -5VDS<br>25 V GS = -3.0V<br>VGS = -4.5V VGS = -2.5V<br>15<br>VGS = -4.0V VGS = -2.0V<br>20<br>f— f<br>15 pou 10 ye<br>10<br>VGS = -1.8V 5 T = 150°CA<br>5 T = 125°CA<br>T = 85°CA T = 25°CA<br>0 nafp — 0 aayfo T = -55°CA ane<br>0 0.5 1.0 1.5 2.0 0 0.5 1 1.5 2 2.5 3<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -V , GATE SOURCE VOLTAGE (V)GS<br>Fig. 12 Typical Output Characteristics Fig. 13 Typical Transfer Characteristics<br>0.06 0.06<br>0.05 0.05 V = 4.5VGS<br>0.04 0.04 T = 150°CA<br>T = 125°CA<br>0.03 -V GS = 2.5V 0.03 T = 85°C A<br>-VGS = 4.5V T = 25°CA<br>0.02 0.02 T = -55°C A<br>0.01 0.01<br>0 0<br>0 5 10 15 20 25 30 0 5 10 15 20<br>== -ID, DRAIN-SOURCE CURRENT (A) -I , DRAIN CURRENT (A)D<br>Fig. 14 Typical On-Resistance Fig. 15 Typical Drain-Source On-Resistance<br>vs. Drain Current and Gate Voltage vs. Drain Current and Temperature<br>1.6 0.06<br>0.05<br>1.4<br>1.2 0.04 POAT -V = 2.5V-I = 5AGSD<br>0.03<br>-V = 4.5VGS<br>1.0 -I = 10A D -V = 4.5VGS<br>0.02 -I = 10A D<br>0.8 -V = 2.5V -I = 5AGSD 0.01<br>PEEL Ere<br>0.6 0 CCT<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>T , JUNCTION TEMPERATURE (°C)J T , JUNCTION TEMPERATURE (°C)J<br>Fig. 16 On-Resistance Variation with Temperature Fig. 17 On-Resistance Variation with Temperature<br>, DRAIN CURRENT(A)<br>D<br>-I<br>) Ω<br>DRAIN-SOURCE ON-RESISTANCE (<br>,<br>DS(ON)<br>R<br>) Ω<br>DRAIN-SOURCE ON-<br>,<br>DS(ON)<br>R RESISTANCE (NORMALIZED)<br>DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON),<br>R<br>, DRAIN CURRENT (A)<br>-I<br>D<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
8 of 11 **www.diodes.com**
DMC2020USD Document number: DS32121 Rev. 6 - 2
April 2020 © Diodes Incorporated
**DMC2020USD** dd
## ora
**==> picture [224 x 211] intentionally omitted <==**
**----- Start of picture text -----**<br>
1.2<br>1.0<br>0.8<br>SERRE<br>0.6 -I = 1mADD<br>SS<br>0.4 -I = 250µADD<br>0.2 SSanan ib<br>0 LE ELELL ELELL<br>-50 -25 0 25 50 75 100 125 150<br>T , AMBIENT TEMPERATURE (°C)AA<br>Fig. 18 Gate Threshold Variation vs. Ambient Temperature<br>GATE THRESHOLD VOLTAGE(V)<br>,<br>GS(TH)<br>V<br>**----- End of picture text -----**<br>
**==> picture [482 x 667] intentionally omitted <==**
**----- Start of picture text -----**<br>
1.2 30<br>1.0 25<br>0.8 20 T = 25°C A<br>SERRE<br>0.6 -I = 1mADD 15<br>SS<br>0.4 -I = 250µADD 10<br>0.2 SSanan ib 5<br>0 LE ELELL ELELL 0<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2<br>T , AMBIENT TEMPERATURE (°C)AA -V , SOURCE-DRAIN VOLTAGE (V)SD<br>Fig. 18 Gate Threshold Variation vs. Ambient Temperature Fig. 19 Diode Forward Voltage vs. Current<br>10,000<br>f = 1MHz 100,000<br>SSS ——<br>ee ee 10,000 a<br>1,000 — C iss === T = 150°CA<br>=<br>1,000 T = 125°C A<br>C oss<br>100 T A= 85°C<br>100 Sa Crss ____—<br>SSS ————e—————EE<br>———— ee<br>10<br>10 0 ——— 4 8 12 16 20 1 —=— T = 25°CA<br>0 5 10 15 20<br>-VDS, DRAIN-SOURCE VOLTAGE (V)Fig. 20 Typical Capacitance -V , DRAIN-SOURCE VOLTAGE (V) DS<br>Fig. 21 Typical Drain-Source Leakage Current<br>vs. Drain-Source Voltage<br>10<br>8 VDS = -10V<br>ID = -4A<br>afoaa<br>6<br>4<br>ILA<br>2 ALTE<br>0<br>0 JE 5 10 LE 15 20 ELL 25 30 35<br>Qg, OTAL GATE CHARGE (nC) [T]<br>Fig. 22 Gate-Source Voltage vs. Total Gate Charge<br>G<br>GS<br>, ATE-SOURCE VOLTAGE (V)<br>-V<br>SOURCE CURRENT(A)<br>,<br>S<br>-I<br>DRAIN-SOURCE LEAKAGE CURRENT(nA)<br>,<br>DSS<br>-I<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>
9 of 11 **www.diodes.com**
DMC2020USD Document number: DS32121 Rev. 6 - 2
April 2020
© Diodes Incorporated
**DMC2020USD**
## **Package Outline Dimensions**
Please see http://www.diodes.com/package-outlines.html for the latest version.
**==> picture [82 x 147] intentionally omitted <==**
**----- Start of picture text -----**<br>
SO-8<br>Dim Min Max<br>A - 1.75<br>A1 0.10 0.20<br>A2 1.30 1.50<br>A3 0.15 0.25<br>b 0.3 0.5<br>D 4.85 4.95<br>E 5.90 6.10<br>E1 3.85 3.95<br>e 1.27 Typ<br>h - 0.35<br>L 0.62 0.82<br> 0 8<br>All Dimensions in mm<br>**----- End of picture text -----**<br>
## **Suggested Pad Layout**
Please see http://www.diodes.com/package-outlines.html for the latest version.
**==> picture [93 x 109] intentionally omitted <==**
**----- Start of picture text -----**<br>
X<br>L i e<br>Ho "<br>C1<br>C2<br>Y<br>tf! t O O o|<br>**----- End of picture text -----**<br>
|**Dimensions**|**Value(in mm)**|
|---|---|
|**X**|0.60|
|**Y**|1.55|
|**C1 **|5.4|
|**C**<br>**C2**|5.4<br>1.27|
10 of 11 **www.diodes.com**
DMC2020USD Document number: DS32121 Rev. 6 - 2
April 2020 © Diodes Incorporated
**DMC2020USD**
## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
## **LIFE SUPPORT**
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
- A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
**www.diodes.com**
11 of 11 **www.diodes.com**
DMC2020USD Document number: DS32121 Rev. 6 - 2
April 2020 © Diodes Incorporated
Updated at June 9, 2026
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →