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DMC2004VK-7
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 670 mA, 670 mA, 0.55 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- Available until stocks are exhausted
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2018)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOT-563
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 450mW
- Power Dissipation P Channel: 450mW
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 670mA
- Continuous Drain Current Id P Channel: 670mA
- Drain Source On State Resistance N Channel: 0.55ohm
- Drain Source On State Resistance P Channel: 0.9ohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.159 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**NOT RECOMMENDED FOR NEW DESIGN USE DMC2400UV DMC2004VK Green** ## **COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR** ## **Features** - Low On-Resistance - Low Gate Threshold Voltage VGS(TH) < 1V - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - Complementary Pair MOSFET - Ultra-Small Surface Mount Package - ESD Protected Gate ## **Mechanical Data** - Package: SOT563 - Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminal Connections: See Diagram - Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e3** - Weight: 0.006 grams (Approximate) - **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** - **Halogen and Antimony Free. “Green” Device (Note 3)** - **For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at** **- https://www.diodes.com/products/automotive/automotive products/.** - **This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.** **https://www.diodes.com/quality/product-definitions/** **==> picture [440 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> |||||| |---|---|---|---|---| |SOT563|D1|G2|S2| |Q1|Q2| |S1|G1|D2| |ESD Protected|EB)|e|s| |Top View|Bottom View|Top View| |Internal Schematic| |Information|(Note 4)| |Packing| |Part Number|Package| |Qty.|Carrier| |DMC2004VK-7|SOT563|3000|Tape|& Reel| **----- End of picture text -----**<br> ## **Ordering Information** (Note 4) 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. Notes: 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 1 of 9 **www.diodes.com** DMC2004VK Document number: DS30925 Rev. 8 - 3 January 2022 © Diodes Incorporated **DMC2004VK** ## **Marking Information** CAB = Product Type Marking Code YM = Date Code Marking Y = Year (ex: J = 2022) M = Month (ex: 9 = September) Date Code Key **Year 2007 …. 2022 2023 2024 2025 2026 2027 2028 2029 2030 2031 Code** U …. J K L M N O P R S T ~~eeee ee eee a~~ **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code** 1 2 3 4 5 6 7 8 9 O N D ~~eooe~~ **Maximum Ratings N-CHANNEL – Q1** (@TA = +25°C, unless otherwise specified.) **Characteristic Symbol Value Unit** Drain Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V Drain Current (Note 5) TTAA = +25°C = +85°C ID 670 480 mA **Maximum Ratings P-CHANNEL – Q2** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratingsgss** **P-CHANNEL – Q22**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **P-CHANNEL – Q22**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **P-CHANNEL – Q22**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** **P-CHANNEL – Q22**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---| ||||| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Drain Source Voltage|VDSS|-20|V| |Gate-Source Voltage|VGSS|±8|V| |Drain Current (Note 5)<br>TA= +25°C<br>TA= +85°C|= +25°C<br>ID|-530<br>-380|mA| ## **Thermal Characteristics** |**Thermal Characteristics**|**Thermal Characteristics**|||| |---|---|---|---|---| |**Characteristic**||**Symbol**|**Value**|**Units**| |Total Power Dissipation(Note 5)||PD|0.45|W| |Thermal Resistance, Junction to Ambient (Note 5)|Steady State|RJA|281|°C/W| ||t< 10s||210|°C/W| |Total Power Dissipation(Note 6)||PD|1|W| |Thermal Resistance, Junction to Ambient (Note 6)|Steady State|RJA|129|°C/W| ||t< 10s||97|°C/W| |Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C| - Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 2 of 9 **www.diodes.com** DMC2004VK Document number: DS30925 Rev. 8 - 3 January 2022 © Diodes Incorporated **DMC2004VK** **Electrical Characteristics N-CHANNEL – Q1** (@TA = +25°C, unless otherwise specified.) **==> picture [520 x 442] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---| |Gn|Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition| |OFF CHARACTERISTICS (Note 7)| |Drain-Source Breakdown Voltage|BVDSS|20|—|—|V|VGS = 0V, ID = 10µA| |oo|Zero Gate Voltage Drain Current|IDSS|—|eo|—|1.0|µA|VDS = 16V, VGS = 0V| |a|Gate-Source Leakage|IGSS|—|—|±1.0|µA|VGS = ±4.5V, VDS = 0V| |ON CHARACTERISTICS (Note 7)| |>|Gate Threshold Voltage|VGS(TH)|0.5|—|1.0|V|VDS = VGS, ID = 250µA| |—|0.4|0.55|VGS = 4.5V, ID = 540mA| |Static Drain-Source On-Resistance|RDS(ON)|—|0.5|0.70|Ω|VGS = 2.5V, ID = 500mA| |—|0.7|0.90|VGS = 1.8V, ID = 350mA| |Forward Transfer Admittance (Note 8)||Yfs||200|—|—|mS|VDS = 10V, ID = 0.2A| |eePf|Diode Forward Voltage|ee|VSD|0.5|—|1.2|V|VGS = 0V, IS = 115mA| |<,|DYNAMIC CHARACTERISTICS| |Input Capacitance|Ciss|—|—|150|pF| |Output Capacitance|Coss|—|—|25|pF|VDS = 16V, VGS = 0V| |f = 1.0MHz| |SS|Reverse Transfer Capacitance|Crss|—|aa|—|20|S,|p|7|F|Ae_| |Electrical Characteristics P-CHANNEL – Q2|(@TA = +25°C, unless otherwise specified.)| |pO|Characteristic|Symbol|Min|NS|Typ|Le|Max|Unit|SP|Test Condition| |OFF CHARACTERISTICS (Note 7)| |oS|Drain-Source Breakdown Voltage|BVDSS|-20|—|—|V|VGS = 0V, ID = -250µA| |Zero Gate Voltage Drain Current|IDSS|—|—|-1.0|µA|VDS = -20V, VGS = 0V| |SS|Gate-Source Leaka|ON CHARACTERISTICS|ge|(Note 7)|IGSS|—|—|EEE|±1.0|µA|VGS = ±4.5V, VDS = 0V| |ooo|Gate Threshold Voltage|VGS(TH)|-0.5|—|-1.0|V|VDS = VGS, ID = -250µA| |0.7|0.9|VGS = -4.5V, ID = -430mA| |Static Drain-Source On-Resistance|RDS(ON)|—|1.1|1.4|Ω|VGS = -2.5V, ID = -300mA| |1.7|2.0|VGS = -1.8V, ID = -150mA| |es|Forward Transfer Admittance||Yfs||200|—|—|mS|VDS = 10V, ID = 0.2A| |a|Diode Forward Voltage|Se|VSD|-0.5|NM|—|-1.2|V|VGS = 0V|eee|, IS = -115mA| |Ge|DYNAMIC CHARACTERISTICS (Note 8)| |a|4|tb.|4.DOV|4| |Input Capacitance|Ciss|—|—|175|pF| |Output Capacitance|Coss|—|—|30|pF|VDS = -16V, VGS = 0V| |f = 1.0MHz| |SSS|Reverse Transfer Capacitance|Crss|—|—|20|pF| |Notes:|7. Short duration pulse test used to minimize self-heating effect.| |8. Guaranteed by design. Not subject to product testing.| **----- End of picture text -----**<br> 3 of 9 **www.diodes.com** DMC2004VK Document number: DS30925 Rev. 8 - 3 January 2022 © Diodes Incorporated **DMC2004VK** | **==> picture [104 x 23] intentionally omitted <==** **----- Start of picture text -----**<br> INcORPORATED®<br>**----- End of picture text -----**<br> ## **Q1, N-CHANNEL** **==> picture [180 x 384] intentionally omitted <==** **----- Start of picture text -----**<br> PTET tT<br>os | | | | | | fT |<br>SEEEES<br>0.4 | Ves = 14V<br>of | Itine| |<br>0 ce_————e a ee<br>0 1 2 3 4<br>VDS, DRAIN SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristics<br>0 . 91 +PF | | | | fo ft<br>08 Pom> | | |<br>07 Pf of SLT Tf<br>0 . 6 || Vos = Ves Po)aNL<br>Oe ae<br>0.5<br>0 . 4 of ff fmt<br>0 . 3 | | | | € |<br>0.2 | LTA<br>INTIS<br>0<br>- 50 - 25 0 25 50 75 100.<br>TTAA, AMB, AMB IENT TEM PERATURE (PERATURE 蚓 ( °C))<br>Fig. 3 Gate Threshold Voltage<br>vs. Ambient Temperature<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> **==> picture [147 x 26] intentionally omitted <==** **----- Start of picture text -----**<br> ID, DRAIN CURRENT (A)<br>Fig. 5 Static Drain-Source On-Resistance<br>vs. Drain Current<br>**----- End of picture text -----**<br> **==> picture [180 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> VY<br>ny//,<br>08 lA<br>|Wn)|<br>0.4 (|<br>a KAVy<br>0 SN_<br>0.5 1 1 . 5 2 2 . 5<br>VGS, GATE SOURCE VOLTAGE (V)<br>Fig. 2 Typical Transfer Characteristics<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> **==> picture [148 x 27] intentionally omitted <==** **----- Start of picture text -----**<br> ID, DRAIN CURRENT (A)<br>Fig. 4 Static Drain-Source On-Resistance<br>vs. Drain Current<br>**----- End of picture text -----**<br> **==> picture [178 x 67] intentionally omitted <==** **----- Start of picture text -----**<br> ETHIE LEPINE ETI<br>01 0 . 1 1 10<br>ID, DRAIN-SOURCE CURRENT (A)<br>Fig. 6 Static Drain-Source On-Resistance vs.<br>Drain-Source Current vs. Gate Source Voltage<br>**----- End of picture text -----**<br> 4 of 9 DMC2004VK January 2022 © Diodes Incorporated **www.diodes.com** Document number: DS30925 Rev. 8 - 3 **DMC2004VK** ## **Q1, N-CHANNEL** (Continued) **==> picture [409 x 246] intentionally omitted <==** **----- Start of picture text -----**<br> TTAA, AMBI, AMBI ENT TEMPERA TURE (TURE ( 蚓°C))<br>Fig. 7 Static Drain-Source On-State Resistance Fig . 8 Drain Reverse Currentws. Source -D rain<br>vs. Ambient Temperature<br>150<br>FE Vosos = 10v =FCo f== 1MHz<br>pT | ETPT<br>aee<br>ee 120<br>vn .<br>SE t= sso ape fr, = 15000 Z —— ee<br>ee ee Ze A ih) <<br>Pt 4 ee NTT O<br>| |AAASeer x<br>DMI -_<br>se »<br>PT7AAAANS eae ae<br>| AAA ee SE aT 30 } —<br>ACC<br>Sage gy Ne<br>Gael N oo<br>LAE LING TTTcella oes Tr<br>001 0 . 01 0 . 1 1 0 2 4 6 8 10 12 14 16<br>ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Forward Transfer Admittance vs. Drain Current Fig. 10 Typical Capacitance<br>**----- End of picture text -----**<br> 5 of 9 **www.diodes.com** DMC2004VK Document number: DS30925 Rev. 8 - 3 January 2022 © Diodes Incorporated **DMC2004VK** **Q2, P-CHANNEL** **==> picture [485 x 384] intentionally omitted <==** **----- Start of picture text -----**<br> j<br>\ eeee a =-1 .<br>. i -4+-+ an °<br>= - 1.6V<br>tH<br>= - 1V<br>NY<br>“Te fenra N v | 2 y<br>0. 0 2 ] 0 PCEanmczani[| |ss||_|EJ ; et ‘ SAS.3 1.5<br>-VDS, DRAIN SOURCE VOLTAGE (V) -VGS, GATE SOURCE VOLTAGE (V)<br>Fig. 11 Typical Output Characteristics<br>Fig. 12 Typical Transfer Characteristics<br>0 1 a<br>SA H ttaet+4 Ul<br>—~ | a ar ( i<br>/—~ ||<br>10| yeSate<br>TL ||| | |e ao<br>SDel e cheVAP Bi ae<br>i™ Te Dees<br>D Z2ce Ts<br>os ie<br>| [1]<br>oo<br>0 al. 7 set+Cs7WLS =Sesetieeeesiieee=eceePallCeaeeMmtH a |eHimsn il<br>, [|LHMil<br>(anew|| >Ge<br>cE26ONGaZz cnt||eal—_—— Sere lit, |<br>0..3 | | KZ<br><y |<br>0 ~ Ir 0.1 THM il<br>06||mmo 0 - 2 we 25 " | 150 ° 01 iil | 10<br>TTAA , AMBIENT TEMPERATURE (AMBIENT TEMPERATURE 蚓 ( °C)) -ID, DRAIN-SOURCE CURRENT (A)<br>Fig. 13 Gate Threshold Voltage vs. Ambient Temperature Fig. 14 Static Drain-Source On-Resistance vs. Drain Current<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, GATE THRESHOLD VOLTAGE (V)<br>-V<br>GS(th)<br>D<br>, DRAIN CURRENT (A)<br>-I<br>**----- End of picture text -----**<br> **==> picture [164 x 27] intentionally omitted <==** **----- Start of picture text -----**<br> -ID, DRAIN-SOURCE CURRENT (A)<br>Fig. 15 Static Drain-Source On-Resistance vs.<br>Drain Current<br>**----- End of picture text -----**<br> **==> picture [174 x 38] intentionally omitted <==** **----- Start of picture text -----**<br> 0 : : 10<br>-ID, DRAIN-SOURCE CURRENT (A)<br>Fig. 16 Static Drain-Source On-Resistance vs.<br>Drain-Source Current vs. Gate Source Voltage<br>**----- End of picture text -----**<br> 6 of 9 DMC2004VK January 2022 © Diodes Incorporated **www.diodes.com** Document number: DS30925 Rev. 8 - 3 **DMC2004VK** ## **Q2, P-CHANNEL** (Continued) **==> picture [424 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> T AA , AMBIENT TEMPERATURE ( ( 蚓°C)) - Vpg, SOURCE- D RAIN, VOLTAGE<br>Fig. 17 Static Drain-Source On-State Resistance Fig. 18 Drain Reverse Current vs . Source -D rain<br>vs. Ambient Temperature<br>poOO 150<br>Poeee<br>K VosDS = 10 0HH Ft ot f=<br>fT TTA TT eT] LD) | | find<br>FTI HII teeT | 120 .<br>CCIE COI 7S O\U4n<br>oS ee Q\90 a<br>L aesa= Sa a) Zz<br>Pf ft TT a | ee x<br>|Ta[It Wee8S Setaaah. 150re milHH 2 F 50<br>ee J<br>| eae [ll | | So \\S<br>eS<br>a 7.0 Aer aoe Coa Sar 30 \ >[|<br>——_|__ Coss<br>Ze Anh iS Sa ee eR e<br>ZAIN PATIENT |<br>r PM LLIN ELITSP 0 |e?<br>. 001 0 . 01 0.1 1 0 2 4 6 8 10 12 14 16<br>-ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 19 Forward Transfer Admittance vs. Drain Current Fig. 20 Typical Capacitance<br>**----- End of picture text -----**<br> 7 of 9 **www.diodes.com** DMC2004VK Document number: DS30925 Rev. 8 - 3 January 2022 © Diodes Incorporated **DMC2004VK** ## **Package Outline Dimensions** Please see http://www.diodes.com/package-outlines.html for the latest version. **==> picture [33 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> SOT563<br>**----- End of picture text -----**<br> **==> picture [470 x 468] intentionally omitted <==** **----- Start of picture text -----**<br> b<br>a a<br>SOT563<br>E E1 Dim Min Max Typ<br>A 0.55 0.60 --<br>b 0.15 0.30 0.20<br>c 0.10 0.18 0.11<br>L D 1.50 1.70 1.60<br>R.01 E 1.55 1.70 1.60<br>e E1 1.10 1.25 1.20<br>c<br>e -- -- 0.50<br>e1 e1 0.90 1.10 1.00<br>L 0.10 0.30 0.20<br>D a 8° 9° 7°<br>All Dimensions in mm<br>A<br>ml ae<br>Suggested Pad Layout<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>SOT563<br>C X<br>Dimensions Value (in mm)<br>C 0.500<br>C1 1.270<br>Y<br>G 0.600<br>X 0.300<br>X1 1.300<br>Y 0.670<br>Y1 G C1<br>HO Y1 1.940<br>X1<br>Sat<br>a<br>a<br>**----- End of picture text -----**<br> 8 of 9 **www.diodes.com** DMC2004VK Document number: DS30925 Rev. 8 - 3 January 2022 © Diodes Incorporated **DMC2004VK** ## **IMPORTANT NOTICE** 1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functionalsafety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functionalsafety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. & Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. ~~S~~ S 6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. ~~NY~~ 7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. Soe 8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. Copyright © 2022 Diodes Incorporated **www.diodes.com** ~~sow’~~ 9 of 9 **www.diodes.com** DMC2004VK Document number: DS30925 Rev. 8 - 3 January 2022 © Diodes Incorporated
Updated at June 9, 2026
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