DMC2004DWK-7

Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 540 mA, 540 mA, 0.55 ohm

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Manufacturer: DIODES INC.
Product type: Dual MOSFETs
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 6Pins
Channel Type: Complementary N and P Channel
Product Range: -
Qualification: -
Transistor Case Style: SOT-363
Operating Temperature Max: 150°C
Power Dissipation N Channel: 250mW
Power Dissipation P Channel: 250mW
Drain Source Voltage Vds N Channel: 20V
Drain Source Voltage Vds P Channel: 20V
Continuous Drain Current Id N Channel: 540mA
Continuous Drain Current Id P Channel: 540mA
Drain Source On State Resistance N Channel: 0.55ohm
Drain Source On State Resistance P Channel: 0.9ohm
Delivery and price
Units per pack	5000
Price	0.16 €
Current stock	1000+
Lead time	30 days
Datasheet
**DMC2004DWK COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR** 

## **Features** 

- Low On-Resistance 

- Low Gate Threshold Voltage VGS(th)  1V 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- Complementary Pair MOSFET 

- Ultra-Small Surface Mount Package 

- **ESD Protected Gate** 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 2 & 3)** 

- **Halogen and Antimony Free. “Green” Device (Note 4)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.** 

## **Mechanical Data** 

- Case: SOT-363 

- Case Material:  Molded Plastic.  UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity:  Level 1 per J-STD-020C 

- Terminals: Solderable per MIL-STD-202, Method 208 

- Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). 

- Terminal Connections: See Diagram 

- Marking Information: See Page 7 

- Ordering & Date Code Information: See Page 7 

- Weight: 0.006 grams (approximate) 

**https://www.diodes.com/quality/product-definitions/** 

**==> picture [30 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT-363<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
D1 G2 S2<br>Q1 Q2<br>ESD protected<br>S1 G1 D2<br>TOP VIEW TOP VIEW<br>Internal Schematic<br>**----- End of picture text -----**<br>


**Maximum Ratings N-CHANNEL – Q1** @TA = 25°C unless otherwise specified 

|**Maximum Ratings N-CHANNEL – Q1gs N-CHANNEL – Q1s N-CHANNEL – Q11**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratings N-CHANNEL – Q1gs N-CHANNEL – Q1s N-CHANNEL – Q11**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratings N-CHANNEL – Q1gs N-CHANNEL – Q1s N-CHANNEL – Q11**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratings N-CHANNEL – Q1gs N-CHANNEL – Q1s N-CHANNEL – Q11**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratings N-CHANNEL – Q1gs N-CHANNEL – Q1s N-CHANNEL – Q11**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain Source Voltage||VDSS|20|V|
|Gate-Source Voltage||VGSS|8|V|
|Drain Current (Note 1)|TA= 25°C<br>TA=85°C|ID|540<br>390|mA|



## **Maximum Ratings P-CHANNEL – Q2** @TA = 25°C unless otherwise specified 

|**Maximum Ratings P-CHANNEL – Q2gs P-CHANNEL – Q2s P-CHANNEL – Q22**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratings P-CHANNEL – Q2gs P-CHANNEL – Q2s P-CHANNEL – Q22**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain Source Voltage||VDSS|-20|V|
|Gate-Source Voltage||VGSS|8|V|
|Drain Current (Note 1)|TA= 25°C<br>TA= 85°C|ID|-430<br>-310|mA|



## **Thermal Characteristics – Total Device** @TA = 25°C unless otherwise specified 

|**Thermal Characteristics – Total Device**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Thermal Characteristics – Total Device**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Thermal Characteristics – Total Device**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Thermal Characteristics – Total Device**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation (Note 1)|Pd|250|mW|
|Thermal Resistance, Junction to Ambient|RJA|500|C/W|
|Operating and Storage Temperature Range|Tj, TSTG|-65 to +150|C|



- Notes: 1. Device mounted on FR-4 PCB. 

   2. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

3. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 4. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

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**DMC2004DWK** 

|**Electrical Characteristics N-CHANNEL – Q1**@TA= 25°C unless otherwise specified|**Electrical Characteristics N-CHANNEL – Q1**@TA= 25°C unless otherwise specified|
|---|---|
|||
||**Characteristic**<br>**Symbol**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>**Test Condition**<br>**OFF CHARACTERISTICS(Note 5)**<br>~~I~~<br>~~ID I~~<br>~~NS (OO~~<br>~~I (OO~~|
||Drain-Source Breakdown Voltage<br>BVDSS<br>20<br><br><br>V<br>VGS = 0V,ID= 10A<br>Zero Gate Voltage Drain Current<br>IDSS<br><br><br>1<br>A<br>VDS = 16V,VGS= 0V<br>Gate-Source Leakage<br>IGSS<br><br><br>1<br>A<br>VGS= ±4.5V,VDS= 0V<br>**ON CHARACTERISTICS(Note 5)**<br>Gate Threshold Voltage<br>VGS(th)<br>0.5<br><br>1.0<br>V<br>VDS= VGS,ID= 250A<br>Static Drain-Source On-Resistance<br>RDS (ON)<br><br><br><br>0.4<br>0.5<br>0.7<br>0.55<br>0.70<br>0.90<br><br>VGS= 4.5V, ID= 540mA<br>VGS= 2.5V, ID= 500mA<br>VGS= 1.8V,ID= 350mA<br>Forward Transfer Admittance<br>|Yfs|<br>200<br><br><br>mS<br>VDS=10V,ID= 0.2A<br>Diode Forward Voltage(Note 5)<br>VSD<br>0.5<br><br>1.2<br>V<br>VGS= 0V,IS= 115mA<br>**DYNAMIC CHARACTERISTICS**<br>Input Capacitance<br>Ciss<br><br><br>150<br>pF<br>VDS= 16V, VGS= 0V<br>f = 1.0MHz<br>Output Capacitance<br>Coss<br><br><br>25<br>pF<br>Reverse Transfer Capacitance<br>Crss<br><br><br>20<br>pF<br>~~fe~~<br>~~ef~~<br>~~ee~~<br>~~ee~~<br>~~aot~~<br>~~ff~~<br>~~ff~~<br>~~Ce~~<br>~~ee~~|
|||
|**Electrical Characteristics** **P-CHANNEL – Q2** @TA= 25°C unless otherwise specified||
|||
||**Characteristic**<br>**Symbol**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>**Test Condition**<br>**OFF CHARACTERISTICS(Note 5)**<br>Drain-Source Breakdown Voltage<br>BVDSS<br>-20<br><br><br>V<br>VGS= 0V,ID= -250A<br>~~I~~<br>~~ID UI~~<br>~~IDOD~~<br>~~es~~|
||Zero Gate Voltage Drain Current<br>IDSS<br><br><br>-1.0<br>A<br>VDS = -20V,VGS= 0V<br>Gate-Source Leakage<br>IGSS<br><br><br>1.0<br>A<br>VGS= ±4.5V,VDS= 0V<br>~~ee~~|
||**ON CHARACTERISTICS(Note 5)**<br>Gate Threshold Voltage<br>VGS(th)<br>-0.5<br><br>-1.0<br>V<br>VDS= VGS,ID= -250A<br>~~ee~~|
||Static Drain-Source On-Resistance<br>RDS (ON)<br><br>0.7<br>1.1<br>1.7<br>0.9<br>1.4<br>2.0<br><br>VGS= -4.5V, ID= -430mA<br>VGS= -2.5V, ID= -300mA<br>VGS= -1.8V,ID= -150mA<br>Forward Transfer Admittance<br>|Yfs|<br>200<br><br><br>mS<br>VDS=10V,ID= 0.2A<br>~~eee~~|
||Diode Forward Voltage(Note 5)<br>VSD<br>-0.5<br><br>-1.2<br>V<br>VGS= 0V,IS= -115mA<br>~~fe~~|
||**DYNAMIC CHARACTERISTICS**<br>~~Ce~~|
||Input Capacitance<br>Ciss<br><br><br>175<br>pF<br>VDS= -16V, VGS= 0V<br>f = 1.0MHz<br>Output Capacitance<br>Coss<br><br><br>30<br>pF<br>Reverse Transfer Capacitance<br>Crss<br><br><br>20<br>pF<br>~~ne~~|
||Notes:<br>5.    Short duration pulse test used to minimize self-heating effect.|



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**DMC2004DWK** fs 

## **Q1, N-CHANNEL** 

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**----- Start of picture text -----**<br>
CW<br>6 PoPScorse)<br>ve<br>ae. 0 _poa TT<br>0 1 2 3 4<br>VDS, DRAIN SOURCE VOLTAGE (V)<br>Fig. 1  Typical Output Characteristics<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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D<br>**----- End of picture text -----**<br>


VGS, GATE SOURCE VOLTAGE (V) Fig. 2  Typical Transfer Characteristics 

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**----- Start of picture text -----**<br>
, GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>V<br>**----- End of picture text -----**<br>


- TTAA, AMBIENT TEMPERATURE , AMBIENT TEMPERATURE ( 癈( C)) Fig. 3  Gate Threshold Voltage vs. Ambient Temperature 

ID, DRAIN CURRENT (A) Fig. 5  Static Drain-Source On-Resistance vs. Drain Current 

ID, DRAIN CURRENT (A) Fig. 4  Static Drain-Source On-Resistance vs. 

Drain Current 

ID, DRAIN-SOURCE CURRENT (A) Fig. 6  Static Drain-Source On-Resistance vs. Drain-Source Current vs. Gate Source Voltage 

10 

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**DMC2004DWK** sd ~~[|~~ 

## **Q1, N-CHANNEL** (continued) 

**T** AA[, ] , **AMBIENT TEMPERATU** RE (RE (癈 C)) Fig. 7  Static Drain-Source On-State Resistance vs. Ambient Temperature 

ID, DRAIN CURRENT (A) Fig. 9  Forward Transfer Admittance vs. Drain Current 

VSD, DRAIN-SOURCE VOLTAGE (V) Fig. 8  Reverse Drain Current vs. Source-Drain Voltage 

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**----- Start of picture text -----**<br>
VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 10  Typical Capacitance<br>**----- End of picture text -----**<br>


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## **Q2, P-CHANNEL** 

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**----- Start of picture text -----**<br>
a<br>|)<br>os a e<br>|oohOe<br>0 Eee<br>0 ccoec 4 2 aoe: 3 4<br>-VDS, DRAIN SOURCE VOLTAGE (V)<br>Fig. 11  Typical Output Characteristics<br>, DRAIN CURRENT (A)<br>-I<br>D<br>**----- End of picture text -----**<br>


- 0.8 ~~PLoS ee °°ca~~ - os ~~ve~~ alt ~~|| Pot |~~ 

- 0) ~~A LLELL~~ 0 ~~.~~ 3 ~~SET) LLL~~ 0 ~~.~~ i1 ~~-~~ 50 ~~PT-~~ 25 0 25 50 75 100 TTAA, A, A **MBIEN** T TEMPERATURE (T TEMPERATURE 癈( )C) Fig. 13  Gate Threshold Voltage vs. Ambient Temperature 

-ID, DRAIN-SOURCE CURRENT (A) Fig. 15  Static Drain-Source On-Resistance vs. Drain Current 

**==> picture [184 x 157] intentionally omitted <==**

**----- Start of picture text -----**<br>
wh easlc —Kh /<br>' fy<br>| V4<br>0 . 4 OATy<br>IY<br>oP” 0.5 0.7 0 . 9 1.14  An 1 . 3 1 . 5 1.7 19 2 . 1<br>-VGS, GATE SOURCE VOLTAGE (V)<br>Fig. 12  Typical Transfer Characteristics<br>, DRAIN CURRENT (A)<br>-I<br>D<br>**----- End of picture text -----**<br>


-ID, DRAIN-SOURCE CURRENT (A) Fig. 14  Static Drain-Source On-Resistance vs. Drain Current 

0.1 1 10 -ID, DRAIN-SOURCE CURRENT (A) Fig. 16  Static Drain-Source On-Resistance vs. Drain-Source Current vs. Gate Source Voltage 

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**DMC2004DWK** ~~|~~ 

## omeceoreorRratTteEe D ~~LTE.~~ 

## **Q2, P-CHANNEL** (continued) 

**T** AA **, AMBIENT TEMPERA** TURE (TURE (癈 C)) Fig. 17  Static Drain-Source On-State Resistance vs. Ambient Temperature 

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**----- Start of picture text -----**<br>
-ID, DRAIN CURRENT (A)<br>Fig. 19  Forward Transfer Admittance vs. Drain Current<br>**----- End of picture text -----**<br>


-VDS, SOURCE-DRAIN VOLTAGE (V) Fig. 18  Reverse Drain Current vs. Source-Drain Voltage 

**==> picture [135 x 20] intentionally omitted <==**

**----- Start of picture text -----**<br>
-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 20  Typical Capacitance<br>**----- End of picture text -----**<br>


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**www.diodes.com** 

**DMC2004DWK** 

**Ordering Information** (Note 6) **Part Number Case Packaging** DMC2004DWK-7 SOT-363 3000/Tape & Reel Notes: 6. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. **Marking Information** CAB = Marking Code YM = Date Code Marking CAB Y = Year ex: U = 2007 M = Month ex: 9 = September Date Code Keyy **Year 2007 2008 2009 2010 2011 Code** U V W X Y **Month Jan Feb Mar Aprprr Mayy Jun Jul Augg Sepp Oct Code** 1 2 3 4 5 6 7 8 9 O N | ~~ft————ff~~ 

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||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|CAB = Marking Code|
|YM = Date Code Marking|
|CAB|Y = Year ex: U = 2007|
|M = Month ex: 9 = September|
|Date Code Keyy|
|Year|2007|2008|2009|2010|2011|2012|
|Code|U|V|W|X|Y|Z|
|Month|Jan|Feb|Mar|Aprprr|Mayy|Jun|Jul|Augg|Sepp|Oct|Nov|Dec|
|Code|1|2|3|4|5|6|7|8|9|O|N|D|
|ff|

**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

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**----- Start of picture text -----**<br>
||||||||
|---|---|---|---|---|---|---|
|Please see http://www.diodes.com/package-outlines.html|for the latest version.|
|A|
|SOT-363|
|Dim|Min|Max|
|A|0.10|0.30|
|B|C|
|B|1.15|1.35|
|C|2.00|2.20|
|aLy|D|0.65 Nominal|
|F|0.30|0.40|
|H|
|H|1.80|2.20|
|K|M|J||0.10|
|K|0.90|1.00|
|L|0.25|0.40|
|J|D|F|L|M|0.10|0.25|
||0|8°|
|All Dimensions in mm|
|ggested Pad Layout ested Pad Layout yout out|
|Please see http://www.diodes.com/package-outlines.html|for the latest version.|
|E|E|
|Dimensions Value (in mm(in mmin mm)|
|Z|2.55|
|G|1.3|
|X|0.42|
|Y|0.6|
|pe|G|ach|C|C|1.9|
|Z|E|0.65.6565|
|Y|
|foe|
|X|
|-|

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## **Suggested Pad Layout ested Pad Layout yout out** 

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**----- Start of picture text -----**<br>
|||
|---|---|
|Dimensions Value (in mm(in mmin mm)|
|Z|2.55|
|G|1.3|
|X|0.42|
|Y|0.6|
|C|1.9|
|E|0.65.6565|

**----- End of picture text -----**<br>


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DMC2004DWK Document number: DS31114 Rev. 5 - 2 

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**DMC2004DWK IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: [ 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2019, Diodes Incorporated **www.diodes.com**[;] DMC2004DWK 8 of 8 October 2019 Document number: DS31114 Rev. 5 - 2 **www.diodes.com** © Diodes Incorporated 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

October 2019 © Diodes Incorporated
Updated at June 9, 2026
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