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DMC1030UFDBQ-7
Dual MOSFET, Complementary N and P Channel, 12 V, 12 V, 5.1 A, 5.1 A, 0.034 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: AEC-Q101
- Transistor Case Style: U-DFN2020
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.36W
- Power Dissipation P Channel: 1.36W
- Drain Source Voltage Vds N Channel: 12V
- Drain Source Voltage Vds P Channel: 12V
- Continuous Drain Current Id N Channel: 5.1A
- Continuous Drain Current Id P Channel: 5.1A
- Drain Source On State Resistance N Channel: 0.034ohm
- Drain Source On State Resistance P Channel: 0.059ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.206 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
**DMC1030UFDBQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET**
## **Product Summary**
|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|---|
|||||
|**Device**|**BVDSS**|**RDS(ON) MAX**|**ID MAX**<br>**TA = +25°C**|
|Q1<br>N-Channel|N-Channel<br>12V|34mΩ@VGS= 4.5V|5.1A|
|||40mΩ@VGS= 2.5V|4.7A|
|||50mΩ@VGS= 1.8V|4.2A|
|||70mΩ@VGS= 1.5V|3.6A|
|Q2<br>P-Channel|-12|59mΩ @ VGS= -4.5V|-3.9A|
|||81mΩ@VGS= -2.5V|-3.3A|
|||115mΩ@VGS= -1.8V|-2.8A|
|||215mΩ@VGS= -1.5V|-2.0A|
## **Features**
- Low On-Resistance
- Low Input Capacitance
- Low Profile, 0.6mm Max Height
- **ESD Protected Gate**
- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)**
- **Halogen and Antimony Free. “Green” Device (Note 3)**
- **Qualified to AEC-Q101 Standards for High Reliability**
- **PPAP Capable (Note 4)**
## **Mechanical Data**
- Case: U-DFN2020-6 (Type B)
## **Description and Applications**
This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e4**
- Terminals Connections: See Diagram Below
- Load Switch
- Weight: 0.0065 grams (Approximate)
- Power Management Functions
**==> picture [509 x 126] intentionally omitted <==**
**----- Start of picture text -----**<br>
Portable Power Adaptors U-DFN2020-6 (Type B) D1 D2<br>S2<br>G2<br>D2<br>DD1<br>G1 G2<br>D1<br>D2<br>G1<br>&<br>ESD PROTECTED S1 Gate Protection Diode S1 Gate Protection Diode S2<br>Pin1<br>N-CHANNEL MOSFET P-CHANNEL MOSFET<br>Bottom View<br>Internal Schematic<br>**----- End of picture text -----**<br>
## **Ordering Information** (Note 5)
|**Ordering Informationg Information Information** (Note 5)|**Ordering Informationg Information Information** (Note 5)|**Ordering Informationg Information Information** (Note 5)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMC1030UFDBQ-7|U-DFN2020-6(Type B)|3000/Tape & Reel|
|DMC1030UFDBQ-13|U-DFN2020-6(Type B)|10000/Tape & Reel|
- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
## **Marking Information**
|||||||||||||D3 = Product Type Marking Code|D3 = Product Type Marking Code|D3 = Product Type Marking Code|||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||**D3**<br>**YM**||||YM = Date Code Marking<br>Y = Year (ex: D = 2016)<br>M = Month (ex: 9 = September)|||||||||
||||||||||||||||||||||
||Date CodeKey||||||||||||||||||||
||**Year**|**2015**|||||**2016**|||||**2017**<br>**2018**||**2019**|||**2020**||**2021**||
||**Code**||C|||||D||||E<br>F||G|||H|||I|
|**Month**<br>**Jan**<br>**Code**<br>1<br>~~es ~~||||**Feb**<br>2<br> ~~ee ~~|||**Mar**<br>3<br> ~~es ~~||**Apr**<br>4<br> ~~ee ~~|||**May**<br>**Jun**<br>**Jul**<br>5<br>6<br>7<br> ~~ee ee ee ~~||**Aug**<br>8<br> ~~ee ~~|**Sep**<br>9<br> ~~ee~~||**Oct**<br>O||**Nov**<br>N|**Dec**<br>D|
||DMC1030UFDBQ|||||||||||1 of 9|||||||January 2016||
||Document number: DS38242 Rev.1 - 2||Document number: DS38242 Rev.1 - 2|||||||||**www.diodes.com**|||||||© Diodes Incorporated||
January 2016 © Diodes Incorporated
**DMC1030UFDBQ**
**Maximum Ratings** (@TA = +25°C, unless otherwise specified.)
|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~ee~~|||**Symbol**<br>~~ee~~<br>~~ee~~|**Q1**<br>**N-CHANNEL**<br>~~ee~~<br>~~ee~~|**Q2**<br>**P-CHANNEL**<br>~~ee~~<br>~~ee~~|**Unit**<br>~~ee~~|
|Drain-Source Voltage<br>~~sr~~|||VDSS<br>~~ee~~<br>~~sr~~|12<br>~~ee~~<br>~~sr~~|-12<br>~~ee~~<br>~~sr~~|V<br>~~sr~~|
|Gate-Source Voltage<br>~~sr~~|||VGSS<br>~~sr~~|±8<br>~~sr~~|±8<br>~~sr~~|V<br>~~sr~~|
|Continuous Drain Current (Note 6)<br>N-CHANNEL: VGS= 4.5V<br>P-CHANNEL: VGS= -4.5V<br>~~i~~<br>~~Se~~<br>~~—————~~|Steady<br>State<br>~~i~~<br>~~Se a~~|TA= +25°C<br>TA= +70°C<br>~~i~~<br>~~a~~|ID<br>~~i~~|5.1<br>4.1<br>~~i~~|-3.9<br>-3.1<br>~~i~~|A<br>~~i~~|
||t < 5s<br>~~i~~<br>~~Se a~~|TA= +25°C<br>TA= +70°C<br>~~i~~<br>~~a~~|ID<br>~~i~~|6.6<br>5.3<br>~~i~~|-5.0<br>-4.0<br>~~i~~|A<br>~~i~~|
|Maximum Continuous Body Diode Forward Current (Note 6)<br>~~Se a~~<br>~~—————~~|||IS|2|-1.7|A|
|Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)<br>~~Se a~~<br>~~—————~~|||IDM|35|-25|A|
|Avalanche Current(L = 0.1mH)<br>~~Se a~~<br>~~—————~~|||IAS<br>~~OD~~|5<br>~~OD~~|-5<br>~~I~~|A|
|Avalanche Energy (L = 0.1mH)<br>~~a~~|||EAS<br>~~a~~<br>~~OD~~|4<br>~~a~~<br>~~OD~~|4<br>~~a~~<br>~~I~~|mJ<br>~~a~~|
## **Thermal Characteristics**
|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 6)|SteadyState|PD|1.36|W|
||t < 5s||1.89||
|Thermal Resistance, Junction to Ambient (Note 6)|SteadyState|RJA|92|°C/W|
||t < 5s||66||
|Thermal Resistance, Junction to Case (Note 6)||RJC|18||
|Operating and Storage Temperature Range||TJ, TSTG|-55 to +150|°C|
**Electrical Characteristics Q1 N-CHANNEL** (@ TA = +25°C, unless otherwise specified.)
||||||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~GO~~|**Symbol**<br>~~GO~~|**Min**<br>~~GO~~|**Typ **<br>~~GO~~|**Max**<br>~~GO~~|**Unit**<br>~~GO~~|**Test Condition**<br>~~GO~~<br>~~(~~|
|**OFF CHARACTERISTICS(Note 7) **<br>~~(~~|||||||
|Drain-Source Breakdown Voltage<br>~~ef~~|BVDSS<br>~~ef~~|12<br>~~ef~~|—<br>~~ef~~|—<br>~~ef~~|V<br>~~ef~~|VGS= 0V, ID= 250μA<br>~~ef~~|
|Zero Gate Voltage Drain Current TJ= +25°C<br>~~ee~~|IDSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|1.0<br>~~ee~~|μA<br>~~ee~~|VDS= 12V, VGS= 0V<br>~~ee~~|
|Gate-Source Leakage<br>~~ee~~|IGSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|±10<br>~~ee~~|μA<br>~~ee~~|VGS= ±8V, VDS= 0V<br>~~ee~~|
|**ON CHARACTERISTICS(Note 7) **|||||||
|Gate Threshold Voltage<br>~~|~~|VGS(TH)<br>~~|~~|0.4<br>~~|~~|—<br>~~|~~|1<br>~~|~~|V<br>~~|~~|VDS= VGS, ID= 250μA<br>~~|~~|
|Static Drain-Source On-Resistance<br>~~/==-—~~|RDS(ON)<br>~~/==-—~~|—<br>~~/==-—~~|17<br>~~/==-—~~|34<br>~~/==-—~~|mΩ<br>~~/==-—~~|VGS= 4.5V, ID= 4.6A<br>~~/==-—~~|
|||—<br>~~/==-—~~|20<br>~~/==-—~~|40<br>~~/==-—~~||VGS= 2.5V, ID= 4.2A<br>~~/==-—~~|
|||—<br>~~/==-—~~|24<br>~~/==-—~~|50<br>~~/==-—~~||VGS= 1.8V, ID= 3.8A<br>~~/==-—~~|
|||—<br>~~/==-—~~|28<br>~~/==-—~~|70<br>~~/==-—~~||VGS= 1.5V, ID= 1.5A<br>~~/==-—~~|
|Diode Forward Voltage|VSD|—|0.7|1.2|V|VGS= 0V, IS= 4.8A|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~II~~|||||||
|Input Capacitance<br>~~I~~|Ciss<br>~~I~~<br>~~I~~|—<br>~~I~~<br>~~I~~|1003<br>~~I~~<br>~~I~~|—<br>~~I~~|pF<br>~~I~~|VDS= 6V, VGS= 0V,<br>f = 1.0MHz|
|Output Capacitance|Coss<br>~~I ~~|—<br> ~~I~~|132<br>~~I~~|—|pF||
|Reverse Transfer Capacitance|Crss|—|115|—|pF||
|Gate Resistance<br>~~——~~|Rg<br>~~eS~~|—<br>~~eS~~|11.3<br>~~eS~~|—<br>~~eS~~|Ω<br>~~eS~~|VDS= 0V, VGS= 0V, f = 1MHz<br>~~eS~~|
|Total Gate Charge(VGS= 4.5V)<br>~~|~~<br>~~——~~|Qg<br>~~eS~~|—<br>~~ee~~<br>~~eS~~|12.2<br>~~ee~~<br>~~eS~~|—<br>~~es~~<br>~~eS~~|nC<br>~~eS~~|VDS= 10V, ID= 6.8A<br>~~eS~~<br>~~ee~~|
|Total Gate Charge(VGS= 8V)<br>~~|~~<br>~~——~~||—<br>~~ee~~<br>~~eS~~|23.1<br>~~ee~~<br>~~eS~~|—<br>~~es~~<br>~~eS~~|nC<br>~~eS~~||
|Gate-Source Charge<br>~~|~~<br>~~——~~|Qgs<br>~~eS~~|—<br>~~ee~~<br>~~eS~~|1.3<br>~~ee~~<br>~~eS~~|—<br>~~es~~<br>~~eS~~|nC<br>~~eS~~||
|Gate-Drain Charge<br>~~——~~<br>~~——<—~~|Qgd<br>~~eS~~|—<br>~~eS~~|1.5<br>~~eS~~|—<br>~~eS~~<br>~~ee~~|nC<br>~~eS~~<br>~~ee~~||
|Turn-On DelayTime<br>~~——~~<br>~~——<—~~|tD(ON)<br>~~eS~~|—<br>~~eS~~|4.4<br>~~eS~~|—<br>~~eS~~<br>~~ee~~|ns<br>~~eS~~<br>~~ee~~|VDD= 6V, VGS= 4.5V,<br>RL= 1.1Ω, RG= 1Ω<br>~~eS~~<br>~~ee~~|
|Turn-On Rise Time<br>~~——~~<br>~~——<—~~|tR<br>~~eS~~|—<br>~~eS~~|7.4<br>~~eS~~|—<br>~~eS~~<br>~~ee~~|ns<br>~~eS~~<br>~~ee~~||
|Turn-Off DelayTime<br>~~—— ~~<br>~~——<—~~<br>~~oy~~|tD(OFF)<br> ~~eS~~<br>~~oy~~|—<br>~~eS~~|18.8<br>~~eS~~|—<br>~~eS~~<br>~~ee~~|ns<br>~~eS~~<br>~~ee~~||
|Turn-Off Fall Time<br>~~——<—~~<br>~~oy~~|tF<br>~~oy~~|—|4.9|—<br>~~ee~~|ns<br>~~ee~~||
|Body Diode Reverse Recovery Time<br>~~——<—~~<br>~~oy~~|tRR<br>~~oy~~|—|7.6|—<br>~~ee~~|ns<br>~~ee~~|IS= 5.4A, dI/dt = 100A/μs<br>~~ee~~|
|Body Diode Reverse Recovery Charge<br>~~oy~~|QRR<br>~~oy~~|—|0.9|—|nC|IS= 5.4A, dI/dt = 100A/μs|
Notes: 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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**DMC1030UFDBQ**
**==> picture [486 x 670] intentionally omitted <==**
**----- Start of picture text -----**<br>
20 20<br>VGS = 4.5V /, I VGS = 1.8V if<br>18 VGS = 4.0V VGS = 2.0V VGS [= 1.5] V 18 V = 5.0VDS<br>16 V GS = 3.5V 16<br>14 VGS = 3.0V ) 14<br>N [T(A]<br>12 12<br>10 7 AnAe 10 ef e<br>C [URRE]<br>8 fe I [N] 8 ey a<br>D [RA]<br>6 ,I D 6 T = 150°CA<br>4 DoT VGS = 1.0V 4 T = 125°CA jj T = 85°CA<br>2 a V GS = 0.9V 2 a T = 25°C oo A<br>T = -55°CA<br>0 PLEa Ty 0 _ —<br>0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2<br>VDS, DRAIN-SOURCE VOLTAGE (V) V , GATE-SOURCE VOLTAGE (V)GS<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>0.05 0.04<br>)<br>VGS = 1.5V ( V = 4.5VGS<br>N [CE]<br>0.04<br>T [A]<br>0.03<br>I [S] S T = 125°CA T = 150°CA<br>0.03 VVGS GS == 1. 1 8V [RE]<br>O [N-] T = 85°CA<br>A Coe<br>0.02<br>VGS = 2.5V T = 25°CA<br>0.02 VGS = 4.5V O [URCE][S] I [N-] T = -55°CA<br>0.01<br>0.01 D [RA]<br>,<br>O [N)]<br>[S(] D<br>R<br>0 0.00<br>0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A)<br>Figure 3 Typical On-Resistance vs. Figure 4 Typical On-Resistance vs.<br>Drain Current and Gate Voltage Drain Current and Temperature<br>2 0.06<br>1.8<br>1.6 Se V I GSD = 5.0A 2.5= V 0.05 Tilt tpi<br>1.4<br>SEEEEE 0.04 Titi iL<br>1.2<br>VGS 1.8= V VGS 1.8= V<br>1 P| | | | ber {7 I D = 3.0A 0.03 an ID = 3.0A B=<br>0.8 ees = VGS 2.5= V<br>a 0.02 ee ID = 5.0A<br>0.6<br>0.4 PERCH 0.01 eee<br>0.2<br>0 FEEEEFE) 0 EERE<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Figure 5 On-Resistance Variation with Temperature Figure 6 On-Resistance Variation with Temperature<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>, DRAIN CURRENT (A)<br>ID<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>D<br> I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>**----- End of picture text -----**<br>
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DMC1030UFDBQ Document number: DS38242 Rev.1 - 2
January 2016 © Diodes Incorporated
**DMC1030UFDBQ**
**==> picture [478 x 662] intentionally omitted <==**
**----- Start of picture text -----**<br>
1 20<br>[V)] 18<br>0.8 TELL 16 a<br>) [A]<br>T [(] 14<br>[OLTAGE(] V N<br>E<br>0.6 Baek | | EE | R 12 ee | |<br>SS I = 1mAD RU |<br>CE 10 T = 150°CA<br>T [HRESHOLD] 0.4 ™_ I = 250µAD CR 8 I T = 125°CA<br>O [U]<br>S 6 T = 25°CA<br>[ATE] G I [,] S T = 85°CA<br>, [h)] ( [t] S 0.2 _ 4 ee’/A T = -55°CA<br>G<br>V 0 20 By<br>-50 -25 0 25 50 75 100 125 150 0 0.3 0.6 0.9 1.2 1.5<br>T , JUNCTION TEMPERATURE (J [o] C) V , SOURCE-DRAIN VOLTAGE (V)SD<br>Figure 7 Gate Threshold Variation vs. Junction Temperature Figure 8 Diode Forward Voltage vs. Current<br>10000 8<br>f = 1MHz<br>SSS<br>a 6 J.<br>1000 Ciss<br>lf—_— 4 SaverLo<br>Sw VDS = 10V<br>Coss ID 6.8= A<br>100 ——<br>Crss<br>2<br>——_—————<br>se<br>10 ee 0<br>0 2 4 6 8 10 12 0 5 10 15 20 25<br>VDS, DRAIN-SOURCE VOLTAGE (V) Qg [, TOTAL GATE CHARGE ] (nC)<br>Figure 9 Typical Junction Capacitance Figure 10 Gate Charge<br>100<br>RDS(ON)<br>Limited<br>10<br>[A)]<br>T [(]<br>[N] E DC<br>R<br>RU 1 P = 10sW<br>C P = 1sW<br>[IN] A P = 100msW<br>RD P = 10msW<br>,I D 0.1 P = 1msW<br>T = 150°CT = 25°CJ(max)A P = 100µsW<br>V = 4.5VGS a aee<br>Single Pulse<br>DUT on 1 * MRP Board<br>0.01 ll<br>0.1 1 10 100<br>V , DRAIN-SOURCE VOLTAGE (V)DS<br>Figure 11 SOA Safe Operation Area<br>, SOURCE CURRENT (A)<br>IS<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, DRAIN CURRENT (A)<br>ID<br>T<br>, JUNCTION CAPACITANCE (pF)<br>C<br>GS<br> GATE THRESHOLD VOLTAGE (V)<br>V<br>**----- End of picture text -----**<br>
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DMC1030UFDBQ Document number: DS38242 Rev.1 - 2
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**DMC1030UFDBQ**
## **Electrical Characteristics Q2 P-CHANNEL** (@ TA = +25°C, unless otherwise specified.)
|**Electrical Characteristics Q2** **P-CHANNEL**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q2** **P-CHANNEL**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q2** **P-CHANNEL**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q2** **P-CHANNEL**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q2** **P-CHANNEL**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q2** **P-CHANNEL**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **<br>**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7) **<br>~~Ce~~<br>~~a~~<br>~~I~~<br>~~GO(OO~~||||||
|Drain-Source Breakdown Voltage<br>~~a~~|BVDSS|-12<br>~~I~~|—<br>—<br>~~GO~~|V<br>~~GO~~|VGS= 0V, ID= -250μA<br>~~(OO~~<br>~~(OO~~|
|Zero Gate Voltage Drain Current TJ= +25°C<br>~~a~~<br>~~S(O~~|IDSS<br>~~S(O~~|—<br>~~I~~<br>~~S(O~~|—<br>-1.0<br>~~GO~~<br>~~S(O~~|μA<br>~~GO ~~<br>~~S(O~~|VDS= -12V, VGS= 0V<br> ~~(OO~~<br>~~S(O~~<br>~~(OO~~|
|Gate-Source Leakage|IGSS|—|—<br>±10|μA|VGS= ±8V, VDS= 0V<br>~~(OO~~|
|**ON CHARACTERISTICS(Note 7) **<br>~~Ce~~<br>~~a~~<br>~~I~~<br>~~GO(OO~~||||||
|Gate Threshold Voltage<br>~~a~~|VGS(TH)|-0.4<br>~~I~~<br>~~a~~|—<br>-1<br>~~GO~~<br>~~ee~~<br>~~ee~~|V<br>~~GO~~<br>~~ee~~|VDS= VGS, ID= -250μA<br>~~(OO~~<br>~~PO~~|
|Static Drain-Source On-Resistance<br>~~a~~|RDS(ON)|—<br>~~I~~<br>~~a~~|37<br>59<br>~~GO~~<br>~~ee~~<br>~~ee~~|mΩ<br>~~GO ~~<br>~~ee~~<br>~~ee~~|VGS= -4.5V, ID= -3.6A<br> ~~(OO~~<br>~~PO~~|
|||—<br>~~a~~<br>~~a~~|48<br>81<br>~~ee~~<br>~~ee~~<br>~~ee~~||VGS= -2.5V, ID= -3.1A<br>~~PO~~<br>~~pO~~|
|||—<br>~~a~~<br>~~a~~|69<br>115<br>~~ee~~<br>~~ee~~<br>~~ee~~||VGS= -1.8V, ID= -2.6A<br>~~pO~~<br>~~PO~~|
|||—<br>~~a~~<br>~~a~~|88<br>215<br>~~ee~~<br>~~ee~~<br>~~ee~~||VGS= -1.5V, ID= -0.5A<br>~~pO~~<br>~~PO~~|
|Diode Forward Voltage|VSD|—<br>~~a~~|-0.7<br>-1.2<br>~~ee~~<br>~~ee~~|V<br>~~ee~~|VGS= 0V, IS= -3.7A<br>~~PO~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~Ce~~<br>~~GO~~<br>~~——~~<br>~~eeeeee eeoe~~<br>~~a~~||||||
|Input Capacitance<br>~~GO~~<br>~~——~~<br>~~a~~|Ciss<br>~~GO~~<br>~~ee~~|—<br>~~GO~~<br>~~GO~~<br>~~ee~~|1028<br>—<br>~~GO~~<br>~~GO~~<br>~~ee ee~~|pF<br>~~GO~~<br>~~oe~~|VDS= -6V, VGS= 0V,<br>f = 1.0MHz<br>~~(OO~~|
|Output Capacitance<br>~~——~~<br>~~a~~|Coss<br>~~ee~~|—<br>~~GO~~<br>~~ee~~|285<br>—<br>~~GO~~<br>~~ee ee~~|pF<br>~~oe~~||
|Reverse Transfer Capacitance<br>~~——~~<br>~~a~~|Crss<br>~~ee~~|—<br>~~GO~~<br>~~ee~~|254<br>—<br>~~GO~~<br>~~ee ee~~<br>~~OD~~|pF<br>~~oe~~<br>~~OD(~~||
|Gate Resistance<br>~~——~~<br>~~a~~|Rg<br>~~ee ~~|—<br>~~GO~~<br> ~~ee ~~|19.6<br>—<br>~~GO~~<br> ~~ee ee ~~<br>~~OD~~|Ω<br> ~~oe~~<br>~~OD(~~|VDS= 0V, VGS= 0V, f = 1MHz<br>~~(OO~~|
|Total Gate Charge(VGS= -4.5V)|Qg|—|13<br>—<br>~~OD~~|nC<br>~~OD(~~|VDS= -10V, ID= -4.7A<br>~~(OO~~|
|Total Gate Charge(VGS= -8V)||—|20.8<br>—|nC||
|Gate-Source Charge<br>~~a~~|Qgs<br>~~a~~|—<br>~~a~~|1.8<br>—<br>~~a~~|nC<br>~~a~~||
|Gate-Drain Charge<br>~~GG~~|Qgd<br>~~GG~~|—<br>~~GG~~|4.5<br>—<br>~~GG~~|nC<br>~~GG~~||
|Turn-On DelayTime<br>~~eG~~<br>~~re~~|tD(ON)<br>~~eG~~<br>~~re~~|—<br>~~eG~~<br>~~re~~|5.6<br>—<br>~~eG~~<br>~~re~~|ns<br>~~eG~~<br>~~re~~|VDD= -6V, VGS= -4.5V,<br>RL= 1.6Ω, RG= 1Ω<br>~~re~~|
|Turn-On Rise Time<br>~~GO~~<br>~~re~~|tR<br>~~GO~~<br>~~re~~|—<br>~~GO~~<br>~~re~~|12.8<br>—<br>~~GO~~<br>~~re~~|ns<br>~~GO~~<br>~~re~~||
|Turn-Off DelayTime<br>~~re~~|tD(OFF)<br>~~re~~|—<br>~~re~~|30.7<br>—<br>~~re~~|ns<br>~~re~~||
|Turn-Off Fall Time<br>~~re~~<br>~~GG~~|tF<br>~~re~~<br>~~GG~~|—<br>~~re~~<br>~~GG~~|25.4<br>—<br>~~re~~<br>~~GG~~|ns<br>~~re~~<br>~~GG~~||
|Body Diode Reverse Recovery Time<br>~~(OO~~|tRR<br>~~(OO~~|—<br>~~(OO~~|31.6<br>—<br>~~(OO~~|ns<br>~~(OO~~|IS= -3.6A, dI/dt = 100A/μs<br>~~(OO~~|
|Body Diode Reverse Recovery Charge<br>~~ee~~|QRR<br>~~ee~~|—<br>~~ee~~|7.8<br>—<br>~~ee~~|nC<br>~~ee~~|IS= -3.6A, dI/dt = 100A/μs<br>~~ee~~|
Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing.
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20<br>VGS = -4.5V VGS = -2.0V<br>18 VGS = -4.0V Ye |<br>VGS = -3.0V<br>16 V GS = -3.5V Ye<br>14 VGS = -1.8V<br>Po<br>12<br>ff<br>10 a VGS = -1.5V<br>Zane<br>8 ee<br>6<br>7 Ane<br>VGS = -1.0V<br>4<br>2 f———<br>VGS = -0.9V<br>0 fo<br>0 0.5 1 1.5 2 2.5 3<br>-VDS, DRAIN -SOURCE VOLTAGE (V)<br>Figure 12 Typical Output Characteristics<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br>
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20<br>VDS = -5.0V<br>18 Aan<br>16 ee<br>14<br>on<br>12<br>ee<br>a<br>10<br>es<br>8 ny ao<br>6<br>see TA = 150C<br>4 TA = 85C<br>TA = 125C<br>2 a T A = 25C a<br>TA = -55C<br>0 pf<br>0 0.5 1 1.5 2 2.5 3<br>-VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 13 Typical Transfer Characteristics<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br>
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DMC1030UFDBQ<br>0.3 0.06<br>VGS = -4.5V<br>0.25 VGS = -1.8V<br>0.05 TA = 150C<br>0.2 TA = 125C<br>TA = 85C<br>0.15 VGS = -1.5V 0.04<br>TA = 25C<br>0.1 pp poe aneneeeece<br>VGS = -2.5V TA = -55C<br>yp 0.03 SS<br>0.05<br>i — 7<br>VGS = -4.5V<br>0 Seep 0.02 LETT LE<br>0 2 4 6 8 10 12 14 16 18 20<br>0 2 4 6 8 10 12 14 16 18 20<br>-ID, DRAIN-SOURCE CURRENT (A) -IFigure 15 Typical On-Resistance vs. D, DRAIN SOURCE CURRENT (A)<br>Figure 14 Typical On-Resistance vs. Drain<br>Current and Gate Voltage Drain Current and Temperature<br>2 0.1<br>1.8 0.09<br>VGS -1.8= V<br>1.6 VGS = -2.5V 0.08 I D -3.0= A<br>1.4 SEE ID = -5.0A 0.07 o——eee=<br>HERE TS CO ey<br>1.2 0.06<br>CEP Pees Set re<br>1 0.05 V GS = -2.5V<br>0.8 eer VGS = -1.8V 0.04 coer ID -5.0= A<br>ID = -3.0A<br>0.6 aEe 0.03 aEee<br>0.4 0.02<br>0.2 FEFEEEH, 0.01 EEE<br>0 EEE 0 CEE EEE<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Figure 16 On-Resistance Variation with Temperature Figure 17 On-Resistance Variation with Temperature<br>1 20<br>) 18<br>( [V] EER<br>G [E] 0.8 16<br>O [LTA] do -I =1mAD ) [A] (TN 14 a<br>V E<br>0.6 SS -I = 250µAD RR 12 es ||<br>U<br>H [OLD] C<br>S E 10<br>C T = 150°CA<br>0.4 7) SNRRCoS R 8 i e y/a|i<br>T [HRE] O [U]<br>T [E] S 6 T = 125°CA<br>S<br>G [A] - [I,] T = 25°CA<br>, 0.2 4 fp T = 85°CA<br>( [TH)] G [S] ES 2 =gfe T = -55°CA<br>V<br>0 eS 0 ify<br>-50 -25 0 25 50 75 100 125 150 0 0.3 0.6 0.9 1.2 1.5<br>T , AMBIENT TEMPERATURE (°C)A -V , SOURCE-DRAIN VOLTAGE (V)SD<br>Figure 18 Gate Threshold Variation vs. Ambient Temperature Figure 19 Diode Forward Voltage vs. Current<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>S<br>, GATE THRESHOLD VOLTAGE (V) -I<br>GS(TH)<br>V<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>**----- End of picture text -----**<br>
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**DMC1030UFDBQ**
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10000<br>f = 1MHz<br>——_—————<br>DOee es es ns |<br>A<br>Ciss<br>1000 pt /<br>SSS ——<br>aSfes Coss 4 VIDIDD DS = -4.7A== -10V10V<br>C rss<br>100 SSS /<br>ee /<br>eg 2<br>a im,<br>a<br>a<br>10 | | | [| | | | ; /<br>0 2 4 6 8 10 12 0 5 10 15<br>-VDS, DRAIN-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)g, TOTAL GATE CHARGE (nC), TOTAL GATE CHARGE (nC)<br>Figure 20 Typical Junction Capacitance Figure 21 Gate-Charge Characteristics<br>100<br>RDS(on)<br>Limited<br>i—{ | {iH fee ofree @ p r tt<br>10 a |<br>[A)] ee ee<br>T [(] be SRENEESEH<br>[N] E SUE ee NS PT ThE rE<br>R DC<br>R<br>UC 1 N P = 10sW SA N NEEl<br>P = 1sW<br>[IN] RA [|ORS P = 100msW | NSS AINETaTT)ee<br>D P = 10msW<br>D P = 1msW<br>- [I,] 0.1 c u 7 SSPE ET<br>T = 150°CJ(max) P = 100µsW<br>T = 25°CA a<br>V = -4.5VGS<br>Single Pulse<br>0.01 DUT on 1 * MRP Board F TL<br>0.1 1 10 100<br>-V , DRAIN-SOURCE VOLTAGE (V)DS<br>Figure 22 SOA Safe Operation Area<br>1 A A SO ON SS SS a a<br>D = 0.9<br>Se D = 0.7 SS eee<br>D = 0.5<br>by Pommeee<br>D = 0.3<br>N [CE]<br>T [A]<br>SUR CETITIAN AU eeMIAL}°22Z4\\\IGMAUUTI/GNROTIVIMRAUIVIONOITos<br>I [S] S 0.1 SCTEEI LAM ATI<br>D = 0.1<br>R [E]<br>L EE a<br>A<br>M D = 0.05<br>R Fy ttc ATE ETHIE Tl<br>HT A<br>T [HE]<br>D = 0.02<br>N [T] THEE THIER THRICE<br>0.01 AM OT TIT TINIEEAINE ELIT ET<br>I [E] D = 0.01<br>N [S] EO ee<br>T [RA] D = 0.005<br>eal nnTt EAL E L RθJA(t) = r(t)* RθJA<br>HT TT LETT<br>r [(t),] RθJA = 159 [o] C/W<br>Single Pulse Duty Cycle, D = t1/t2<br>0.001 rn CUCU il<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIMES (sec)<br>Figure 23 Transient Thermal Resistance<br>7 of 9<br>GS<br>, GATE-SOURCE VOLTAGE (V)<br>-V<br>, DRAIN CURRENT (A)<br>D<br>-I<br>r(t), TRANSIENT THERMAL RESISTANCE<br>, JUNCTION CAPACITANCE (pF)<br>C<br>T<br>**----- End of picture text -----**<br>
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/<br>4 VIDIDD DS = -4.7A== -10V10V<br>/<br>/<br>2<br>im,<br>; /<br>0 5 10 15 20 25<br>Qg, TOTAL GATE CHARGE (nC)g, TOTAL GATE CHARGE (nC), TOTAL GATE CHARGE (nC)<br>Figure 21 Gate-Charge Characteristics<br>GS<br>, GATE-SOURCE VOLTAGE (V)<br>-V<br>**----- End of picture text -----**<br>
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DMC1030UFDBQ Document number: DS38242 Rev.1 - 2
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**DMC1030UFDBQ**
## **Package Outline Dimensions**
Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.
## **U-DFN2020-6 (Type B)**
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A3<br>A1<br>A<br>Seating Plane<br>U-DFN2020-6<br>Sat Type B<br>D Dim Min Max Typ<br>A 0.545 0.605 0.575<br>D2 D2 A1 0.00 0.05 0.02<br>A3 - - 0.13<br>b 0.20 0.30 0.25<br>D 1.95 2.075 2.00<br>D2 0.50 0.70 0.60<br>e - - 0.65<br>z1 E 1.95 2.075 2.00<br>E z1 E2 E2 0.90 1.10 1.00<br>k - - 0.45<br>k<br>L 0.25 0.35 0.30<br>i == z - - 0.225<br>z1 - - 0.175<br>L<br>All Dimensions in mm<br>e<br>z<br>b<br>(Pin #1 ID)<br>R0.150<br>**----- End of picture text -----**<br>
## **Suggested Pad Layout**
Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.
## **U-DFN2020-6 (Type B)**
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X2<br>C<br>X1(2x)<br>Y2 Y1(2x )<br>G<br>G1<br>ae<br>Y<br>“t vo X<br>**----- End of picture text -----**<br>
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Value<br>Dimensions<br>(in mm)<br>C 0.650<br>G 0.150<br>G1 0.450<br>X 0.350<br>X1 0.600<br>X2 1.650<br>Y 0.500<br>Y1 1.000<br>Y2 2.300<br>**----- End of picture text -----**<br>
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**IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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Updated at June 9, 2026
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