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DMC1030UFDB-7
Dual MOSFET, Complementary N and P Channel, 12 V, 12 V, 5.1 A, 5.1 A, 0.034 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: AEC-Q101
- Transistor Case Style: U-DFN2020
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.36W
- Power Dissipation P Channel: 1.36W
- Drain Source Voltage Vds N Channel: 12V
- Drain Source Voltage Vds P Channel: 12V
- Continuous Drain Current Id N Channel: 5.1A
- Continuous Drain Current Id P Channel: 5.1A
- Drain Source On State Resistance N Channel: 0.034ohm
- Drain Source On State Resistance P Channel: 0.059ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.117 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
**DMC1030UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET**
## **Product Summary**
|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|---|
|||||
|**Device**|**BVDSS**|**RDS(ON) max**|**ID MAX**<br>**TA = +25°C**|
|Q1<br>N-Channel|12V|34mΩ@VGS= 4.5V|5.1A|
|||40mΩ@VGS= 2.5V|4.7A|
|||50mΩ@VGS= 1.8V|4.2A|
|||70mΩ@VGS= 1.5V|3.6A|
|Q2<br>P-Channel|-12V|59mΩ @ VGS= -4.5V|-3.9A|
|||81mΩ@VGS= -2.5V|-3.3A|
|||115mΩ@VGS= -1.8V|-2.8A|
|||215mΩ@VGS= -1.5V|-2.0A|
## **Description**
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
## **Features**
- Low On-Resistance
- Low Input Capacitance
- Low Profile, 0.6mm Max Height
- ESD Protected Gate
- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)**
- **Halogen and Antimony Free. “Green” Device (Note 3)**
- **For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at**
-
- **https://www.diodes.com/products/automotive/automotive products/.**
- **This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.**
**https://www.diodes.com/quality/product-definitions/**
- **An Automotive-Compliant Part is Available Under Separate Datasheet (DMC1030UFDBQ)**
## **Applications**
- Load Switch
- Power Management Functions
- Portable Power Adaptors
## **Mechanical Data**
- Case: U-DFN2020-6
- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e4**
- Terminals Connections: See Diagram Below
- Weight: 0.0065 grams (Approximate)
**==> picture [491 x 130] intentionally omitted <==**
**----- Start of picture text -----**<br>
U-DFN2020-6 D1 D2<br>(Type B)<br>S2<br>G2<br>D2 D1 G1 G2<br>D1<br>D2<br>&<br>ESD PROTECTED G1 S1 Gate Protection Diode S1 Gate Protection Diode S2<br>Pin1<br>N-CHANNEL MOSFET P-CHANNEL MOSFET<br>Bottom View<br>Internal Schematic<br>**----- End of picture text -----**<br>
## **Ordering Information** (Note 4)
|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMC1030UFDB-7|U-DFN2020-6(Type B)|3000/Tape & Reel|
|DMC1030UFDB-13|U-DFN2020-6(Type B)|10000/Tape & Reel|
- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
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DMC1030UFDB Document number: DS36933 Rev. 3 - 2
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**DMC1030UFDB**
## **Marking Information**
Site 1
|||||||D3 = Product Type Marking Code|||||
|---|---|---|---|---|---|---|---|---|---|---|
||||**D3**|**YM**||YM = Date Code Marking<br>Y = Year (ex: H = 2020)|||||
|||||||M = Month (ex: 9 = September)|||||
|Date CodeKey<br>**Year**<br>**2014**<br>**Code**<br>B<br>**Month**<br>**Jan**<br>**Code**<br>1<br>~~es ~~<br>~~ee ~~|**…**<br>…<br>**Feb**<br>2<br> ~~ee ~~<br> ~~ee ~~|<br>|**2020**<br>H<br>**Mar**<br>3<br> ~~ee ~~<br> ~~ee ~~|**2021**<br>I<br>**Apr**<br>4<br> ~~ee ~~<br> ~~ee ~~||**2022**<br>**2023**<br>**2024**<br>**2025**<br>**2026**<br>J<br>K<br>L<br>M<br>N<br>**May**<br>**Jun**<br>**Jul**<br>**Aug**<br>**Sep**<br>5<br>6<br>7<br>8<br>9<br> ~~ee ee ee ee ee ~~<br> ~~ee ee ee~~||**2027**<br>O<br>**Oct**<br>O<br> ~~ee ~~|**2028**<br>P<br>**Nov**<br>N<br> ~~ee~~|**2029**<br>R<br>**Dec**<br>D|
|Site 2|||||||||||
||||**O7**<br>**YWX**<br>**D3**|||D3 = Product Type Marking Code<br>YWX = Date Code Marking<br>Y = Year (ex: 0 = 2020)<br>W = Week (ex: a = Week 27; z Represents Week 52 and 53)||W = Week (ex: a = Week 27; z Represents Week 52 and 53)|||
|||||||X = Internal Code (ex: U = Monday)|||||
|Date CodeKey<br>**Year**<br>**2014**<br>**…**<br>**2020**<br>**2021**<br>**2022**<br>**2023**<br>**2024**<br>**2025**<br>**2026**<br>**2027**<br>**2028**<br>**2029**<br>**Code**<br>4<br>…<br>0<br>1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>**Week**<br>**1-26**<br>**27-52**<br>**53**<br>**Code**<br>A-Z<br>a-z<br>z<br>~~ee~~<br>~~ee ee ee ee ee ee ee ee~~<br>~~es~~|||||||||||
|**Internal Code **<br>**Sun**<br>**Mon**<br>**Tue**<br>**Wed**<br>**Thu**<br>**Fri**<br>**Sat**<br>**Code**<br>T<br>U<br>V<br>W<br>X<br>Y<br>Z<br>~~ee~~<br>~~ee~~<br>~~ee~~|||||||||||
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DMC1030UFDB Document number: DS36933 Rev. 3 - 2
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**DMC1030UFDB**
## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.)
|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|||**Symbol**|**Q1**<br>**N-CHANNEL**|**Q2**<br>**P-CHANNEL**|**Unit**|
|Drain-Source Voltage|||VDSS|12|-12|V|
|Gate-Source Voltage|||VGSS|±8|±8|V|
|Continuous Drain Current (Note 5)<br>N-Channel: VGS= 4.5V<br>P-Channel: VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|5.1<br>4.1|-3.9<br>-3.1|A|
||t < 5s|TA= +25°C<br>TA= +70°C|ID|6.6<br>5.3|-5.0<br>-4.0|A|
|Maximum Continuous BodyDiode Forward Current (Note 5)|||IS|2|-1.7|A|
|Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)|||IDM|35|-25|A|
## **Thermal Characteristics**
|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 5)|SteadyState|PD|1.36|W|
||t < 5s||1.89||
|Thermal Resistance, Junction to Ambient (Note 5)|SteadyState|RJA|92|°C/W|
||t < 5s||66||
|Thermal Resistance, Junction to Case (Note 5)||RJC|18||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|
**Electrical Characteristics Q1 N-CHANNEL** (@ TA = +25°C, unless otherwise specified.)
|**Electrical Characteristics Q1** **N-CHANNEL**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q1** **N-CHANNEL**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q1** **N-CHANNEL**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q1** **N-CHANNEL**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q1** **N-CHANNEL**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q1** **N-CHANNEL**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q1** **N-CHANNEL**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~|**Min**<br>~~ee~~|**Typ **<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|**Test Condition**<br>~~ee~~|
|**OFF CHARACTERISTICS(Note 6) **<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|12<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= 250μA<br>~~ee~~|
|Zero Gate Voltage Drain Current TJ= +25°C<br>~~es~~|IDSS<br>~~es~~|—<br>~~es~~|—<br>~~es~~|1.0<br>~~es~~|μA<br>~~es~~|VDS= 12V, VGS= 0V<br>~~es~~|
|Gate-Source Leakage<br>~~es~~|IGSS<br>~~es~~|—<br>~~es~~|—<br>~~es~~|±10<br>~~es~~|μA<br>~~es~~|VGS= ±8V, VDS= 0V<br>~~es~~|
|**ON CHARACTERISTICS(Note 6) **|||||||
|Gate Threshold Voltage<br>~~ef~~|VGS(TH)<br>~~ef~~|0.4<br>~~ef~~|—<br>~~ef~~|1<br>~~ef~~|V<br>~~ef~~|VDS= VGS, ID= 250μA<br>~~ef~~|
|Static Drain-Source On-Resistance<br>~~e---.—~~|RDS(ON)<br>~~e---.—~~<br>~~ee~~|—<br>~~e---.—~~|17<br>~~e---.—~~|34<br>~~e---.—~~|mΩ<br>~~e---.—~~|VGS= 4.5V, ID= 4.6A<br>~~e---.—~~|
|||—<br>~~e---.—~~|20<br>~~e---.—~~|40<br>~~e---.—~~||VGS= 2.5V, ID= 4.2A<br>~~e---.—~~|
|||—<br>~~e---.—~~<br>~~a~~|24<br>~~e---.—~~<br>~~ee~~|50<br>~~e---.—~~||VGS= 1.8V, ID= 3.8A<br>~~e---.—~~<br>~~Po~~|
|||—<br>~~e---.—~~<br>~~a~~<br>~~ee~~|28<br>~~e---.—~~<br>~~ee~~<br>~~ee~~|70<br>~~e---.—~~<br>~~ee~~||VGS= 1.5V, ID= 1.5A<br>~~e---.—~~<br>~~Po~~|
|Diode Forward Voltage<br>~~ee~~|VSD<br>~~ee~~<br>~~ee~~|—<br>~~a~~<br>~~ee~~<br>~~ee~~|0.7<br>~~ee~~<br>~~ee~~<br>~~ee~~|1.2<br>~~ee~~<br>~~ee~~|V<br>~~ee~~|VGS= 0V, IS= 4.8A<br>~~Po~~<br>~~ee~~|
|**DYNAMIC CHARACTERISTICS(Note 7)**<br>~~ee~~<br>~~eeee~~|||||||
|Input Capacitance<br>~~ee~~|Ciss<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|1003<br>~~ee ~~<br>~~ee~~|—<br> ~~ee~~<br>~~ee~~|pF<br>~~ee~~|VDS= 6V, VGS= 0V,<br>f = 1.0MHz<br>~~ee~~|
|Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|—<br>~~ee~~|132<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|—<br>~~ee~~|115<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~||
|Gate Resistance|Rg|—|11.3|—|Ω|VDS= 0V, VGS= 0V, f = 1MHz|
|Total Gate Charge(VGS= 4.5V)|Qg|—|12.2|—|nC|VDS= 10V, ID= 6.8A<br>~~ee~~|
|Total Gate Charge(VGS= 8V)||—|23.1|—|nC||
|Gate-Source Charge|Qgs|—|1.3|—|nC||
|Gate-Drain Charge<br>~~———~~|Qgd|—|1.5|—<br>~~ee~~|nC<br>~~ee~~||
|Turn-On Delay Time<br>~~———~~|tD(ON)|—|4.4|—<br>~~ee~~|ns<br>~~ee~~|VDD= 6V, VGS= 4.5V,<br>RL= 1.1Ω, RG= 1Ω<br>~~ee~~|
|Turn-On Rise Time<br>~~———~~|tR|—|7.4|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Delay Time<br>~~———~~|tD(OFF)|—|18.8|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~———~~<br>~~——~~<br>~~a~~|tF<br>~~ee~~|—<br>~~ee~~|4.9<br>|—<br>~~ee~~<br>~~a~~|ns<br>~~ee~~<br>~~a~~||
|Body Diode Reverse Recovery Time<br>~~———~~<br>~~——~~<br>~~a~~|tRR<br>~~ee~~|—<br>~~ee~~|7.6<br>|—<br>~~ee~~<br>~~a~~|ns<br>~~ee~~<br>~~a~~|IS= 5.4A, dI/dt = 100A/μs<br>~~ee~~|
|Body Diode Reverse Recovery Charge<br>~~——~~<br>~~a~~|QRR<br>~~ee~~|—<br>~~ee~~|0.9<br>|—<br>~~a~~|nC<br>~~a~~|IS= 5.4A, dI/dt = 100A/μs|
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
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**DMC1030UFDB**
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20 20<br>VGS = 4.5V VGS = 1.8V<br>18 VGS = 4.0V S/ VGS = 2.0V VGS = 1.5V 18 V = 5.0V DS yy<br>16 V GS = 3.5V 16<br>14 VGS = 3.0V ) [A] 14<br>N [T(]<br>12 feAaa 12 eea<br>10 10<br>C [URRE]<br>8 I [N] 8<br>fa D [RA] A<br>6 ,I D 6 T = 150°CA<br>4 VGS = 1.0V 4 T = 125°CA T = 85A ° C<br>2 7 V GS = 0.9V 2 — of T = 25°CA<br>T = -55°CA<br>0 L__a: 0 | _ fF—<br>0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2<br>VDS, DRAIN-SOURCE VOLTAGE (V) V , GATE-SOURCE VOLTAGE (V)GS<br>Figure 1 Typical Output Characteristics<br>Figure 2 Typical Transfer Characteristics<br>0.05 0.04<br>)<br>VGS = 1.5V ( V = 4.5VGS<br>E<br>C<br>N<br>0.04<br>T [A]<br>0.03<br>I [S] SE T = 125°CA T = 150°CA<br>0.03 V GS = 18V - [R]<br>er TL [N] O SeeeeNenes T = 85°CA<br>E<br>re VGS = 2.5V CR 0.02 T = 25°CA<br>TE ee<br>0.02 [U] O T = -55°CA<br>See VGS = 4.5V - [N] R [S] IA 0.01 FEES<br>0.01 D<br>,<br>( [ON)]<br>D [S]<br>R<br>0 0.00<br>0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A) I , DRAIN CURRENT (A)D<br>Figure 3 Typical On-Resistance vs. Figure 4 Typical On-Resistance vs.<br>Drain Current and Gate Voltage Drain Current and Temperature<br>2 0.06<br>1.8<br>VGS 2.5= V 0.05<br>1.6 I D = 5.0A<br>SoS TELL<br>1.4 CT 0.04 ttt<br>1.2 aaa TT | yy<br>VGS 1.8= V VGS 1.8= V<br>1 I D = 3.0A 0.03 ID = 3.0A<br>0.8 Cope er aan= VGS EE 2.5= V<br>0.6 SEPT 0.02 es-=- ID = 5.0A<br>PFT =<br>0.4<br>0.01<br>0.2 See eee<br>0 ss 0 LLL<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Figure 5 On-Resistance Variation with Temperature Figure 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>, DRAIN CURRENT (A)<br>D<br> I<br>DS(ON)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
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**DMC1030UFDB**
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1<br>0.8 TLE ELE<br>0.6 ST<br>SS ID TTT = 1mA<br>0.4 ry ID = 250μA SY ID = 250礎<br>0.2 ry =aS<br>0 LL ELLENX<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C)<br>Figure 7 Gate Threshold Variation vs. Junct oFigure 7 Gate Threshold Variation vs. Amb i e n Temperature t Temperature<br>10000<br>f = 1MHz<br>===a<br>1000 Ciss<br>Se==ee<br>Saf Coss<br>100 ——<br>Crss<br>————S=—<br>es es es es<br>10 ee<br>0 2 4 6 8 10 12<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Typical Junction Capacitance<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>GS(th)<br>, JUNCTION CAPACITANCE (pF)<br>C<br>T<br>**----- End of picture text -----**<br>
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20<br>18<br>oo |<br>16<br>) [A] (T 14<br>N<br>E<br>R 12 ee |<br>R ee<br>U<br>CE 10 T = 150°C A<br>C<br>R 8 r| T = 125°CA /<br>O [U] S 6 T A = 25°C<br>I [,] S T = 85°CA<br>4 NEeee T = -55°CA<br>2<br>0 wyam/s Aa<br>0 0.3 0.6 0.9 1.2 1.5<br>V , SOURCE-DRAIN VOLTAGE (V)SD<br>Figure 8 Diode Forward Voltage vs. Current<br>8 (TTJ<br>64 BavVerLo<br>VDS = 10V<br>ID 6.8= A<br>2<br>0<br>0 5 10 15 20 25<br>Qg [, TOTAL GATE CHARGE ] (nC)<br>Figure 10 Gate Charge<br>, SOURCE CURRENT (A)<br>IS<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br> GATE THRESHOLD VOLTAGE (V)<br>V<br>GS<br>**----- End of picture text -----**<br>
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100<br>RDS(ON)<br>Limited<br>10<br>[A)]<br>T [(]<br>[N] E DC<br>R<br>RU 1 P = 10sW<br>C P = 1sW<br>[IN] A P = 100ms W<br>RD P = 10msW<br>,I D 0.1 P = 1ms W<br>T = 150°CT = 25J(max)A °C P = 100W µs<br>V = 4.5V GS a en<br>Single Pulse<br>DUT on 1 * MRP Board<br>0.01 ll<br>0.1 1 10 100<br>V , DRAIN-SOURCE VOLTAGE (V)DS<br>Figure 11 SOA Safe Operation Area<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>
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DMC1030UFDB Document number: DS36933 Rev. 3 - 2
February 2020 © Diodes Incorporated
**DMC1030UFDB**
**Electrical Characteristics Q2 P-CHANNEL** (@ TA = +25°C, unless otherwise specified.)
|**Electrical Characteristics Q2** **P-CHANNEL**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q2** **P-CHANNEL**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q2** **P-CHANNEL**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q2** **P-CHANNEL**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q2** **P-CHANNEL**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q2** **P-CHANNEL**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**<br>~~PC~~|**Symbol**|**Min**|**Typ **<br>**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 6) **<br>~~PC~~<br>~~GR~~<br>~~(RU~~<br>~~(I (O(n~~||||||
|Drain-Source Breakdown Voltage<br>~~GRR~~|BVDSS<br>~~GRR~~|-12<br>~~GRR~~<br>~~GR~~|—<br>—<br>~~GRR~~<br>~~(RU~~<br>~~(I~~|V<br>~~GRR~~<br>~~(I (O(n~~|VGS= 0V, ID= -250μA<br>~~GRR~~<br>~~(O(n~~|
|Zero Gate Voltage Drain Current TJ= +25°C<br>~~Pee~~|IDSS<br>~~Pee~~|—<br>~~GR~~<br>~~Pee~~|—<br>-1.0<br>~~(RU~~<br>~~(I~~<br>~~Pee~~|μA<br>~~(I (O(n~~<br>~~Pee~~|VDS= -12V, VGS= 0V<br>~~(O(n~~<br>~~Pee~~|
|Gate-Source Leakage|IGSS|—|—<br>±10|μA|VGS= ±8V, VDS= 0V|
|**ON CHARACTERISTICS(Note 6) **<br>~~Pe~~<br>~~GR~~<br>~~(RU~~<br>~~(I (O(n~~||||||
|Gate Threshold Voltage<br>~~GRR~~<br>~~Po~~|VGS(TH)<br>~~GRR~~<br>~~|~~|-0.4<br>~~GRR~~<br>~~GR~~<br>~~ee~~<br>~~**ee**~~<br>~~ES~~|—<br>-1<br>~~GRR~~<br>~~(RU~~<br>~~(I~~<br>~~ee~~<br>~~eee~~<br>~~**eeeee**~~<br>~~ES~~|V<br>~~GRR~~<br>~~(I (O(n~~<br>~~eee~~<br>~~**eee**~~<br>~~ES~~|VDS= VGS, ID= -250μA<br>~~GRR~~<br>~~(O(n~~<br>~~Ps~~<br>~~**Ps**~~|
|Static Drain-Source On-Resistance<br>~~Po~~|RDS(ON)<br>~~|~~|—<br>~~GR~~<br>~~ee~~<br>~~**ee**~~<br>~~ES~~|37<br>59<br>~~(RU~~<br>~~(I~~<br>~~ee~~<br>~~eee~~<br>~~**eeeee**~~<br>~~ES~~|mΩ<br>~~(I (O(n~~<br>~~eee~~<br>~~**eee**~~<br>~~ES~~<br>~~(RU~~|VGS= -4.5V, ID= -3.6A<br>~~(O(n~~<br>~~Ps~~<br>~~**Ps**~~|
|||—<br>~~ee~~<br>~~**ee**~~<br>~~ES~~|48<br>81<br>~~ee~~<br>~~eee~~<br>~~**eeeee**~~<br>~~ES~~||VGS= -2.5V, ID= -3.1A<br>~~Ps~~<br>~~**Ps**~~|
|||—<br>~~**ee**~~<br>~~ES~~|69<br>115<br>~~**eeeee**~~<br>~~ES~~||VGS= -1.8V, ID= -2.6A<br>~~**Ps**~~|
|||—<br>~~**ee**~~<br>~~ES~~<br>~~(RU~~|88<br>215<br>~~**eeeee**~~<br>~~ES~~<br>~~(RR~~<br>~~(RU~~||VGS= -1.5V, ID= -0.5A<br>~~**Ps**~~<br>~~(~~|
|Diode Forward Voltage<br>~~Po~~<br>~~GRR~~|VSD<br>~~| ~~<br>~~GRR~~|—<br>~~**ee** ~~<br> ~~ES~~<br>~~GRR~~<br>~~(RU~~|-0.7<br>-1.2<br> ~~**ee** ~~~~**eee**~~<br>~~ES~~<br>~~GRR~~<br>~~(RR~~<br>~~(RU~~|V<br>~~**eee** ~~<br>~~ES~~<br>~~GRR~~<br>~~(RU~~|VGS= 0V, IS= -3.7A<br> ~~**Ps**~~<br>~~GRR~~<br>~~(~~|
|**DYNAMIC CHARACTERISTICS(Note 7)**<br>~~(RU~~<br>~~(RR~~<br>~~(RU (~~<br>~~GO~~<br>~~———~~<br>~~eeeeeeoeoe~~||||||
|Input Capacitance<br>~~GO~~<br>~~———~~|Ciss<br>~~GO~~<br>~~ee~~|—<br>~~GO~~<br>~~GO~~<br>~~ee~~|1028<br>—<br>~~GO~~<br>~~eeoe~~|pF<br>~~GO~~<br>~~oeoe~~|VDS= -6V, VGS= 0V,<br>f = 1.0MHz<br>~~(~~|
|Output Capacitance<br>~~———~~|Coss<br>~~ee~~|—<br>~~GO~~<br>~~ee~~|285<br>—<br>~~eeoe~~|pF<br>~~oeoe~~||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~ee~~|—<br>~~GO~~<br>~~ee~~<br>~~GO~~|254<br>—<br>~~eeoe~~<br>~~(I~~<br>~~(I~~|pF<br>~~oeoe~~<br>~~(I (~~||
|Gate Resistance<br>~~———~~<br>~~GR~~|Rg<br>~~ee ~~<br>~~GR~~|—<br>~~GO~~<br> ~~ee ~~<br>~~GR~~<br>~~GO~~|19.6<br>—<br> ~~ee oe~~<br>~~GR~~<br>~~(I~~<br>~~(I~~|Ω<br>~~oe oe~~<br>~~GR~~<br>~~(I (~~|VDS= 0V, VGS= 0V, f = 1MHz<br>~~GR~~<br>~~(~~|
|Total Gate Charge(VGS= -4.5V)|Qg<br>|—<br>~~GO~~|13<br>—<br>~~(I~~<br>~~(I~~|nC<br>~~(I (~~|VDS= -10V, ID= -4.7A<br>~~(~~<br>~~ee~~|
|Total Gate Charge(VGS= -8V)<br>~~a~~||—<br>|20.8<br>—<br>|nC<br>||
|Gate-Source Charge<br>~~a~~|Qgs<br>|—<br><br>~~GO~~|1.8<br>—<br>|nC<br>||
|Gate-Drain Charge<br>~~aGO~~<br>~~ee~~|Qgd<br>~~GO~~<br>~~ee~~|—<br>~~GO~~<br>~~GO~~<br>~~GO~~<br>~~ee~~|4.5<br>—<br>~~GO~~<br>~~ee~~|nC<br>~~GO~~<br>~~ee~~||
|Turn-On DelayTime<br>~~GO~~<br>~~ee~~|tD(ON)<br>~~GO~~<br>~~ee~~|—<br>~~GO~~<br>~~GO~~<br>~~GO~~<br>~~ee~~|5.6<br>—<br>~~GO~~<br>~~ee~~|ns<br>~~GO~~<br>~~ee~~|VDD= -6V, VGS= -4.5V,<br>RL= 1.6Ω, RG= 1Ω<br>~~ee~~<br>~~(~~|
|Turn-On Rise Time<br>~~ee~~|tR<br>~~ee~~|—<br>~~GO~~<br>~~ee~~<br>~~GO~~|12.8<br>—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Delay Time<br>~~ee~~<br>~~GO~~|tD(OFF)<br>~~ee~~<br>~~GO~~|—<br>~~ee~~<br>~~GO~~<br>~~GO~~|30.7<br>—<br>~~ee~~<br>~~GO~~|ns<br>~~ee~~<br>~~GO~~||
|Turn-Off Fall Time<br>~~ee~~<br>~~I~~<br>~~(EGO~~|tF<br>~~ee~~<br>~~I~~<br>~~(EGO~~|—<br>~~ee~~<br>~~GO~~<br>~~I~~<br>~~(EGO~~|25.4<br>—<br>~~ee~~<br>~~I~~<br>~~(~~<br>~~(~~|ns<br>~~ee~~<br>~~I~~<br>~~( (~~||
|Body Diode Reverse Recovery Time<br>~~ee~~<br>~~GG~~<br>~~(EGO~~|tRR<br>~~ee~~<br>~~GG~~<br>~~(EGO~~|—<br>~~ee~~<br>~~GG~~<br>~~(EGO~~|31.6<br>—<br>~~ee~~<br>~~GG~~<br>~~(~~<br>~~(~~|ns<br>~~ee~~<br>~~GG~~<br>~~( (~~|IS= -3.6A, dI/dt = 100A/μs<br>~~ee~~<br>~~GG~~<br>~~(~~|
|Body Diode Reverse Recovery Charge<br>~~(EGO~~|QRR<br>~~(EGO~~|—<br>~~(EGO~~|7.8<br>—<br>~~(~~<br>~~(~~<br>~~(O(n~~|nC<br>~~( (~~<br>~~(O(n~~|IS= -3.6A, dI/dt = 100A/μs<br>~~(~~<br>~~(O(n~~|
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Notes: 6. Short duration pulse test used to minimize self-heating effect.<br>7. Guaranteed by design. Not subject to product testing.<br>20 20<br>VGS = -4.5V VGS = -2.0V VDS = -5.0V<br>18 VGS = -4.0V Wi 18 ee<br>VGS = -3.0V<br>16 V GS = -3.5V 16<br>14 VGS = -1.8V 14<br>Yr A<br>12 12<br>10 VGS = -1.5V 10<br>fe a a<br>8 8<br>6 > Zann 6 KHa oa<br>4 ff VGS = -1.0V 4 7 TAT = 125A = 150CC TA = 85C ee<br>2 t-— 2 a? T A = 25C<br>VGS = -0.9V TA = -55C<br>0 Ana 0 yy; / ee_<br>0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3<br>-VDS, DRAIN -SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 12 Typical Output Characteristics Figure 13 Typical Transfer Characteristics<br>D<br>, DRAIN CURRENT (A)<br>-I<br>, DRAIN CURRENT (A)<br>-I<br>D<br>**----- End of picture text -----**<br>
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0.06<br>VGS = -4.5V<br>0.05 TA = 150C<br>VGS = -1.8V TA = 125C<br>VGS = -1.5V TA = 85C<br>VGS = -2.5V 0.04<br>TA = 25C<br>pitt | |<br>VGS = -4.5V<br>TA = -55C<br>0.03<br>0.02 cor<br>0.0010 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20<br>-ID, DRAIN SOURCE CURRENT (A) -ID, DRAIN SOURCE CURRENT (A)<br>Figure 14 Typical On-Resistance vs. Figure 15 Typical On-Resistance vs.<br>Drain Current and Gate Voltage Drain Current and Temperature<br>2 0.1<br>1.8 0.09<br>es a<br>VGS -1.8= V<br>1.6 VGS = -2.5V 0.08 I D -3.0= A<br>1.4 ID = -5.0A 0.07<br>SEEFEE SS OEE eee<br>1.2 aaa 0.06 eT<br>1 0.05 V GS = -2.5V<br>0.8 ae aml VGS = -1.8V 0.04 eee ID -5.0= A<br>ID = -3.0A<br>0.6 SeooP 0.03 aSeery PP<br>0.4 0.02<br>0.2 FERRE 0.01 EERE EEE<br>0 a 0 a<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Figure 16 On-Resistance Variation with Temperature Figure 17 On-Resistance Variation with Temperature<br>1 20 ey<br>18<br>0.8 16<br>-ID = 1mA ) [A] T [(] 14<br>N<br>E<br>0.6 -ID = 250μA -ID = 250礎 RR 12<br>U<br>C<br>10<br>E<br>C T = 150°CA<br>0.4 OSS R 8 ee //aa<br>SS O [U] S 6 T A = 125°C<br>S<br>- [I,] T = 25°CA<br>0.2 4 T = 85°C A<br>TS 2 5 T = -55°CA<br>0 0<br>-50 TT -25 0 ET 25 50 ETE 75 100 125 150 0 i 0.3 0.6 0.9 1.2 1.5<br>TTAA, AMBIENT TEMPERATURE (°C) , AMBIENT TEMPERATURE (癈 ) -V , SOURCE-DRAIN VOLTAGE (V)SD<br>Figure 18 Gate Threshold Variation vs. Ambient Temperature Figure 19 Diode Forward Voltage vs. Current<br>, SOURCE CURRENT (A)<br>S<br>, GATE THRESHOLD VOLTAGE (V) -I<br>GS(TH)<br>-V<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>GS(TH)<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>**----- End of picture text -----**<br>
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10000<br>f = 1MHz<br>S————————<br>ee|<br>OOes |<br>ee ee ee<br>Ciss<br>1000<br>———————<br>SSSS es<br>Coss<br>ee ee<br>C rss<br>100<br>——<br>sh<br>ee<br>10 esa| | |<br>0 2 4 6 8 10 12<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 20 Typical Junction Capacitance<br>100<br>RDS(ON)<br>i—{ Limited | {iHeePTTee ofree @ eeper ttee ee<br>) 10 -—_}a_} Ge AN NN ||<br>FS<br>T [(A] Pe TONE NT<br>NE 8ST SS<br>R DC<br>R<br>UC 1 PORATION P W = 10s MW NEel<br>P = 1sW<br>I [N] A fo P = 100ms W RNC NCO<br>R Pr SON<br>D P = 10msW<br>P| PSNPT<br>,- [I] D 0.1 a T = 150T = 25°CJ(max)A °C eea P = 1msW P = 100µsW eeSSlll<br>V = -4.5V GS<br>Single Pulse<br>0.01 DUT on 1 * MRP Board Si<br>0.1 1 10 100<br>-V , DRAIN-SOURCE VOLTAGE (V)DS<br>Figure 22 SOA Safe Operation Area<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>
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;<br>V DS = -10V<br>4 ID = -4.7A<br>/<br>2<br>_/S<br>; /<br>0 5 10 15 20 25<br>Qg, TOTAL GATE CHARGE (nC)<br>Figure 21 Gate-Charge Characteristics<br>, GATE-SOURCE VOLTAGE (V)<br>-V<br>GS<br>**----- End of picture text -----**<br>
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**DMC1030UFDB** | sd
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IN cORPORATE D®<br>**----- End of picture text -----**<br>
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1<br>D = 0.9<br>Se D = 0.7 a<br>fa eee er<br>by D = 0.5 Mo eT TT<br>Ne eee cad NT |<br>PTI D = 0.3 ETE EIT de TTT TT ETT<br>0.1<br>AeS D = 0.1 eeNan eee70 aE aM<br>e e [a] [OO] A7eeOG OOO OOO |<br>e<br>D = 0.05<br>ATHLETE<br>Ey [HIRO] | TA TT TT TT<br>La<br>Nc D = 0.02 A<br>0.01 elJ rg oe aeae<br>D = 0.01<br>SS ieeeCoot thoeecientte<br>Poy ot<br>a TT TT ert ALT TT TT TT TTT)<br>Fy D = 0.005 HHcernHoAMITTEEHHH8 R R R θJAθJA JAJA (t) = r(t) * R= 159(t) = r(t) * R = 159 ℃ /W 癈 θJA/WJA mntHT<br>Duty Cycle, D = t1 / t2<br>pm Single Pulse AT TERE EIT PETITE | Duty Cycle, D = t1/ t2 Hill<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIMES (sec)<br>t1, PULSE DURATION TIME (sec)<br>Figure 23 Transient Thermal Resistance<br>Figure 23 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>
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## **Package Outline Dimensions**
Please see http://www.diodes.com/package-outlines.html for the latest version.
**U-DFN2020-6 (Type B)**
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A3<br>A1<br>A<br>Seating Plane<br>en<br>D<br>D2 D2<br>z1<br>E z1 E2<br>k<br>L<br>e<br>z<br>b<br>(Pin #1 ID)<br>R0.150<br>**----- End of picture text -----**<br>
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U-DFN2020-6<br>Type B<br>Dim Min Max Typ<br>A 0.545 0.605 0.575<br>A1 0.00 0.05 0.02<br>A3 - - 0.13<br>b 0.20 0.30 0.25<br>D 1.95 2.075 2.00<br>D2 0.50 0.70 0.60<br>e - - 0.65<br>E 1.95 2.075 2.00<br>E2 0.90 1.10 1.00<br>k - - 0.45<br>L 0.25 0.35 0.30<br>z - - 0.225<br>z1 - - 0.175<br>All Dimensions in mm<br>**----- End of picture text -----**<br>
## **Suggested Pad Layout**
Please see http://www.diodes.com/package-outlines.html for the latest version.
**U-DFN2020-6 (Type B)**
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X2<br>C<br>fe-<br>X1(2x)<br>Y2 Y1(2x)<br>G<br>G1<br>Y<br>X<br>**----- End of picture text -----**<br>
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Value<br>Dimensions<br>(in mm)<br>C 0.650<br>G 0.150<br>G1 0.450<br>X 0.350<br>X1 0.600<br>X2 1.650<br>Y 0.500<br>Y1 1.000<br>Y2 2.300<br>**----- End of picture text -----**<br>
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## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
## **LIFE SUPPORT**
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
- A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
- B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
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Updated at June 9, 2026
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