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DMC1028UFDB-7
Dual MOSFET, Complementary N and P Channel, 12 V, 12 V, 6 A, 6 A, 0.025 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: U-DFN2020
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.36W
- Power Dissipation P Channel: 1.36W
- Drain Source Voltage Vds N Channel: 12V
- Drain Source Voltage Vds P Channel: 12V
- Continuous Drain Current Id N Channel: 6A
- Continuous Drain Current Id P Channel: 6A
- Drain Source On State Resistance N Channel: 0.025ohm
- Drain Source On State Resistance P Channel: 0.08ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.238 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**DMC1028UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET** ## **Product Summary** |**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**| |---|---|---|---| ||||| |**Device**|**BVDSS**|**RDS(ON)max**|**ID max**<br>**TA = +25°C**| |Q1<br>N-Channel|12V|25mΩ@VGS= 4.5V|6.0A| |||30mΩ@VGS= 3.3V|5.5A| |||32mΩ@VGS= 2.5V|5.3A| |Q2<br>P-Channel|-20V|80mΩ@VGS= -4.5V|-3.4A| |||90mΩ@VGS= -3.3V|-3.2A| |||100mΩ@VGS= -2.5V|-3.0A| ## **Features** - Low On-Resistance - Low Input Capacitance - Low Profile, 0.6mm Max Height - ESD HBM Protected up to 1.5kV, MM Protected up to 150V - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** - **Halogen and Antimony Free. “Green” Device (Note 3)** - **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.** **https://www.diodes.com/quality/product-definitions/** ## **Description** This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. ## **Mechanical Data** - Case: U-DFN2020-6 - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 ## **Applications** Optimized for Point of Load (POL) Synchronous Buck Converter that steps down from 3.3V to 1V for core voltage supply to ASICs. Target applications are Ethernet Network Controllers used in: - Terminals: Finish NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e4** - Terminals Connections: See Diagram Below - Weight: 0.0065 grams (Approximate) - Routers, Switchers, Network Interface Controllers (NICs) - Digital Subscriber Line (DSL) - Set-Top Boxes (STBs) **==> picture [488 x 138] intentionally omitted <==** **----- Start of picture text -----**<br> U-DFN2020-6 (Type B) D1 D2<br>S2<br>G2<br>D2<br>D1 G1 G2<br>D1<br>D2<br>ESD PROTECTED G1<br>(La) SS S1 & Gate Protection Gate Protection<br>Pin1 Diode S1 Diode S2<br>Bottom View N-CHANNEL MOSFET P-CHANNEL MOSFET<br>Internal Schematic<br>**----- End of picture text -----**<br> ## **Ordering Information** (Note 4) |**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)| |---|---|---| |||| |**Part Number**|**Case**|**Packaging**| |DMC1028UFDB-7|U-DFN2020-6(Type B)|3,000/Tape & Reel| |DMC1028UFDB-13|U-DFN2020-6(Type B)|10,000/Tape & Reel| - Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 1 of 11 **www.diodes.com** DMC1028UFDB Document number: DS37634 Rev. 5 - 2 February 2020 © Diodes Incorporated **DMC1028UFDB** ## **Marking Information** Site 1 |D8 = Product Type Marking Code<br>YM = Date Code Marking<br>Y = Year (ex: H = 2020)<br>**D8**<br>**YM**|| |---|---| |M = Month (ex: 9 = September)|| ||| |Date CodeKey<br>**Year**<br>**2014**<br>**…**<br>**2020**<br>**2021**<br>**2022**<br>**2023**<br>**2024**<br>**2025**<br>**2026**<br>**2027**<br>**2028**<br>**2029**<br>**Code**<br>B<br>…<br>H<br>I<br>J<br>K<br>L<br>M<br>N<br>O<br>P<br>R<br>**Month**<br>**Jan**<br>**Feb**<br>**Mar**<br>**Apr**<br>**May**<br>**Jun**<br>**Jul**<br>**Aug**<br>**Sep**<br>**Oct**<br>**Nov**<br>**Dec**<br>**Code**<br>1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>O<br>N<br>D<br>~~es ee ee ee ee ee ee ee ee ee ee~~<br>~~ee~~<br>~~es ee ee ee ee~~|| |Site 2|| |D8 = Product Type Marking Code|| |**O7**<br>**YWX**<br>YWX = Date Code Marking<br>Y = Year (ex: 0 = 2020)<br>W = Week (ex: a = Week 27; z Represents Week 52 and 53)<br>X = Internal Code (ex: U = Monday)<br>**D8**|| |Date CodeKey<br>**Year**<br>**2014**<br>**…**<br>**2020**<br>**2021**<br>**2022**<br>**2023**<br>**2024**<br>**2025**<br>**2026**<br>**2027**<br>**2028**<br>**2029**<br>**Code**<br>4<br>…<br>0<br>1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>**Week**<br>**1-26**<br>**27-52**<br>**53**<br>**Code**<br>A-Z<br>a-z<br>z<br>~~ee~~<br>~~ee ee ee ee ee ee ee ee~~<br>~~ee~~|| |**Internal Code**<br>**Sun**<br>**Mon**<br>**Tue**<br>**Wed**<br>**Thu**<br>**Fri**<br>**Sat**<br>**Code**<br>T<br>U<br>V<br>W<br>X<br>Y<br>Z<br>~~ee~~<br>~~ee~~|| 2 of 11 **www.diodes.com** DMC1028UFDB Document number: DS37634 Rev. 5 - 2 February 2020 © Diodes Incorporated **DMC1028UFDB** **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---|---| |||||||| |**Characteristic**<br>~~es~~<br>~~——~~|||**Symbol**<br>~~es~~<br>|**Q1**<br>**N-CHANNEL**<br>~~es~~<br>|**Q2**<br>**P-CHANNEL**<br>~~es~~<br>|**Unit**<br>~~es~~<br>| |Drain-Source Voltage<br>~~——~~|||VDSS<br>|12<br>|-20<br>|V<br>| |Gate-Source Voltage<br>~~——~~|||VGSS<br>|±8<br>|±8<br>|V<br>| |Continuous Drain Current (Note 5)<br>N-Channel: VGS= 4.5V<br>P-Channel: VGS= -4.5V<br>~~——rr~~|Steady<br>State<br>~~rr~~|TA= +25°C<br>TA= +70°C<br>~~rr~~|ID<br>~~rr~~|6.0<br>4.8<br>~~rr~~|-3.4<br>-2.7<br>~~rr~~|A<br>~~rr~~| ||t < 5s<br>~~rr~~<br>~~a~~|TA= +25°C<br>TA= +70°C<br>~~rr~~<br>~~a~~<br>~~(~~<br>~~a~~|ID<br>~~rr~~<br>~~a~~<br>~~(~~<br>~~a~~|7.1<br>5.7<br>~~rr~~<br>~~a~~<br>~~ee~~|-4.0<br>-3.2<br>~~rr~~<br>~~a~~<br>~~ee~~|A<br>~~rr~~<br>~~a~~<br>~~ee~~| |Maximum Continuous BodyDiode Forward Current(Note 5)<br>~~I~~<br>~~(~~<br>~~a~~|||IS<br>~~I~~<br>~~(~~<br>~~a~~|1.4<br>~~I~~<br>~~ee~~|-1.4<br>~~I~~<br>~~ee~~|A<br>~~I~~<br>~~ee~~| |Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)<br>~~(~~<br>~~——~~<br>~~a~~|||IDM<br>~~(~~<br>~~——~~<br>~~a~~|40<br>~~——~~<br>~~ee~~|-20<br>~~——~~<br>~~ee~~|A<br>~~——~~<br>~~ee~~| |Avalanche Current L = 0.1mH<br>~~——~~<br>~~a~~|||IAS<br>~~——~~<br>~~a~~|12<br>~~——~~<br>~~ee~~|-12<br>~~——~~<br>~~ee~~|A<br>~~——~~<br>~~ee~~| |Avalanche EnergyL = 0.1mH<br>~~a~~|||EAS<br>~~a~~|8.4<br>~~ee~~|7.5<br>~~ee~~|mJ<br>~~ee~~| ## **Thermal Characteristics** |**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**| |---|---|---|---|---| |||||| |**Characteristic**||**Symbol**|**Value**|**Unit**| |Total Power Dissipation (Note 5)|SteadyState|PD|1.36|W| ||t < 5s||1.89|| |Thermal Resistance, Junction to Ambient (Note 5)|SteadyState|RθJA|92|°C/W| ||t<5s||66|| |Thermal Resistance,Junction to Case(Note 5)||RθJC|19|| |Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C| Note: 5. Device mounted on 1” 1” FR-4 PCB with high coverage 2oz. Copper, single sided. **Electrical Characteristics Q1 N-CHANNEL** (@TA = +25°C, unless otherwise specified.) |**Electrical Characteristics Q1** **N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q1** **N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q1** **N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q1** **N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q1** **N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q1** **N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q1** **N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---|---| |||||||| |**Characteristic**<br>~~OO~~|**Symbol**<br>~~OO~~|**Min**<br>~~OO~~|**Typ **<br>~~OO~~|**Max**<br>~~OO~~|**Unit**<br>~~OO~~|**Test Condition**<br>~~OO~~| |**OFF CHARACTERISTICS(Note 6) **<br>~~OO~~||||||| |Drain-Source Breakdown Voltage<br>~~OO~~|BVDSS<br>~~OO~~|12<br>~~OO~~|—<br>~~OO~~|—<br>~~OO~~|V<br>~~OO~~|VGS= 0V,ID= 250μA<br>~~OO~~| |Zero Gate Voltage Drain Current TJ= +25°C|IDSS|—|—|1.0|μA|VDS= 12V,VGS= 0V| |Gate-Source Leakage<br>~~SSS~~<br>~~i~~<br>|IGSS<br>~~a~~<br>|—<br>~~a~~<br>|—<br>~~a~~<br>|±10<br>~~ep~~<br>|μA<br>~~ep~~<br>~~ee~~<br>|VGS= ±8V,VDS= 0V<br>~~ee~~<br>~~—~~| |**ON CHARACTERISTICS(Note 6)**<br>~~SSS~~<br>~~i~~<br>~~aaa~~<br>~~ep~~<br>~~ee~~<br>~~—~~||||||| |Gate Threshold Voltage<br>~~SSS~~<br>~~i~~<br>~~==~~|VGS(TH)<br>~~a~~<br>~~==~~|0.4<br>~~a~~<br>~~==~~|—<br>~~a~~<br>~~==~~|1<br>~~ep~~<br>~~==~~|V<br>~~ep~~<br>~~ee~~<br>~~==~~|VDS= VGS,ID= 250μA<br>~~ee~~<br>~~==—~~| |Static Drain-Source On-Resistance<br>~~SSS~~<br>~~i~~<br>~~==~~|RDS(ON)<br>~~a ~~<br>~~==~~|—<br> ~~a ~~<br>~~==~~|17<br> ~~a~~<br>~~==~~|25<br>~~ep~~<br>~~==~~|mΩ<br>~~ep~~<br>~~ee~~<br>~~==~~|VGS= 4.5V,ID= 5.2A<br>~~ee~~<br>~~==—~~| |||—<br>~~==~~|19<br>~~==~~|30<br>~~==~~||VGS= 3.3V,ID= 5.0A<br>~~==—~~| |||—<br>~~==~~|21<br>~~==~~|32<br>~~==~~||VGS= 2.5V,ID= 4.8A<br>~~==—~~| |||—<br>~~==~~|30<br>~~==~~|40<br>~~==~~||VGS= 1.8V,ID= 2.5A<br>~~==—~~| |Diode Forward Voltage<br>|VSD<br>|—<br>|0.7<br>|1.2<br>|V<br>|VGS= 0V,IS= 1A<br>~~—~~| |**DYNAMIC CHARACTERISTICS(Note 7)**<br>~~—~~||||||| |Input Capacitance|Ciss|—|787|—|pF|VDS= 6V, VGS= 0V,<br>f = 1.0MHz| |Output Capacitance|Coss|—|203|—|pF|| |Reverse Transfer Capacitance|Crss|—|177|—|pF|| |Gate Resistance|Rg|—|4.8|—|Ω|VDS= 0V,VGS= 0V,f = 1MHz| |Total Gate Charge(VGS= 3.3V)|Qg|—|7.9|—|nC|VDS= 6V, ID= 6.8A<br>~~ee~~| |Total Gate Charge(VGS= 4.5V)||—<br>~~ee~~|10.5<br>~~ee~~|—<br>~~ee~~|nC|| |Total Gate Charge(VGS= 8V)||—<br>~~ee~~|18.5<br>~~ee~~|—<br>~~ee~~|nC|| |Gate-Source Charge<br>~~a~~|Qgs<br>~~a~~|—<br>~~ee~~<br>~~a~~|1.2<br>~~ee~~<br>~~a~~|—<br>~~ee~~<br>~~a~~|nC<br>~~a~~|| |Gate-Drain Charge<br>~~a~~<br>~~———_——~~|Qgd<br>~~a~~<br>~~———_——~~|—<br>~~a~~|2.9<br>~~a~~|—<br>~~a~~|nC<br>~~a~~<br>~~ee~~|| |Turn-On DelayTime<br>~~a~~<br>~~———_——~~|tD(ON) <br>~~a~~<br>~~———_——~~|—<br>~~a~~|4.6<br>~~a~~|—<br>~~a~~|ns<br>~~a~~<br>~~ee~~|VDD= 6V, VGS= 4.5V,<br>RL= 1.1Ω, RG= 1Ω<br>~~ee~~| |Turn-On Rise Time<br>~~———_——~~|tR<br>~~———_——~~|—|9.4|—|ns<br>~~ee~~|| |Turn-Off DelayTime<br>~~———_——~~<br>~~———~~<br>~~a~~|tD(OFF) <br>~~———_——~~<br>~~a~~|—<br>~~ee~~|15.7<br>~~ee~~|—<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|| |Turn-Off Fall Time<br>~~———_——~~<br>~~———~~<br>~~a~~|tF<br>~~———_——~~<br>~~a~~|—<br>~~ee~~|3.7<br>~~ee~~|—<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|| |BodyDiode Reverse RecoveryTime<br>~~———_——~~<br>~~———~~<br>~~a~~|tRR<br>~~———_——~~<br>~~a~~|—<br>~~ee~~|12.0<br>~~ee~~|—<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|IS= 5.4A,dI/dt = 100A/μs<br>~~ee~~| |BodyDiode Reverse RecoveryCharge<br>~~———~~<br>~~a~~|QRR<br>~~a~~|—<br>~~ee~~|1.8<br>~~ee~~|—<br>~~ee~~|nC<br>~~ee~~|IS= 5.4A,dI/dt = 100A/μs| 7. Guaranteed by design. Not subject to product testing. 3 of 11 **www.diodes.com** DMC1028UFDB Document number: DS37634 Rev. 5 - 2 February 2020 © Diodes Incorporated **DMC1028UFDB** **Electrical Characteristics Q2 P-CHANNEL** (@TA = +25°C, unless otherwise specified.) |**Electrical Characteristics Q2** **P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q2** **P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q2** **P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q2** **P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q2** **P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q2** **P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics Q2** **P-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---|---| |||||||| |**Characteristic**<br>~~—_—_—_——————~~|**Symbol**<br>~~—_—_—_——————~~|**Min**<br>~~—_—_—_——————~~|**Typ **<br>~~—_—_—_——————~~|**Max**<br>~~—_—_—_——————~~|**Unit**<br>~~—_—_—_——————~~|**Test Condition**<br>~~—_—_—_——————~~| |**OFF CHARACTERISTICS(Note 6) **<br>~~—_—_—_——————~~||||||| |Drain-Source Breakdown Voltage<br>~~—_—_—_——————~~|BVDSS<br>~~—_—_—_——————~~|-20<br>~~—_—_—_——————~~|—<br>~~—_—_—_——————~~|—<br>~~—_—_—_——————~~|V<br>~~—_—_—_——————~~|VGS= 0V,ID= -250μA<br>~~—_—_—_——————~~| |Zero Gate Voltage Drain Current TJ= +25°C|IDSS|—|—|-1.0|μA|VDS= -20V,VGS= 0V| |Gate-Source Leakage<br>~~Oo~~|IGSS<br>~~Oo~~|—<br>~~Oo~~|—<br>~~Oo~~|±10<br>~~Oo~~|μA<br>~~Oo~~|VGS= ±8V,VDS= 0V<br>~~Oo~~| |**ON CHARACTERISTICS(Note 6)**<br>~~Oo~~||||||| |Gate Threshold Voltage<br>~~Oo~~<br>~~Pe~~|VGS(TH)<br>~~Oo~~<br>|-0.4<br>~~Oo~~<br>~~a~~<br>|—<br>~~Oo~~<br>~~ee~~<br>|-1<br>~~Oo~~<br>~~ee~~<br>|V<br>~~Oo~~<br><br>|VDS= VGS,ID= -250μA<br>~~Oo~~<br>~~pO~~<br>| |Static Drain-Source On-Resistance<br>~~Oo~~<br>~~Pe ~~|RDS(ON)<br>~~Oo~~<br> ~~===~~|—<br>~~Oo~~<br>~~a~~<br>~~===~~|55<br>~~Oo~~<br>~~ee~~<br>~~===~~|80<br>~~Oo~~<br>~~ee~~<br>~~===~~|mΩ<br>~~Oo~~<br><br>~~===~~|VGS= -4.5V,ID= -3.8A<br>~~Oo~~<br>~~pO~~<br>~~===~~| |||—<br>~~a~~<br>~~===~~|63<br>~~ee~~<br>~~===~~|90<br>~~ee~~<br>~~===~~||VGS= -3.3V,ID= -3.5A<br>~~pO~~<br>~~===~~| |||—<br>~~a~~<br>~~===~~|70<br>~~ee~~<br>~~===~~|100<br>~~ee~~<br>~~===~~||VGS= -2.5V,ID= -3.3A<br>~~pO~~<br>~~===~~| |||—<br>~~a~~<br>~~===~~|88<br>~~ee~~<br>~~===~~|140<br>~~ee~~<br>~~===~~||VGS= -1.8V,ID= -1.0A<br>~~pO~~<br>~~===~~| |||—<br>~~a~~<br>~~===~~|110<br>~~ee~~<br>~~===~~|210<br>~~ee~~<br>~~===~~||VGS= -1.5V,ID= -0.5A<br>~~pO~~<br>~~===~~| |Diode Forward Voltage<br>~~Pe ~~|VSD<br>|—<br>~~a~~<br>|-0.7<br>~~ee~~<br>|-1.2<br>~~ee~~<br>|V<br><br>|VGS= 0V,IS= -1A<br>~~pO~~<br>| |**DYNAMIC CHARACTERISTICS(Note 7)**<br>~~a ee ee pO~~<br>~~Pe ~~||||||| |Input Capacitance<br>~~pT~~|Ciss|—|576|—|pF|VDS= -10V, VGS= 0V,<br>f = 1.0MHz| |Output Capacitance|Coss|—|87|—|pF|| |Reverse Transfer Capacitance|Crss|—|71|—|pF|| |Gate Resistance|Rg|—|15|—|Ω|VDS= 0V,VGS= 0V,f = 1MHz| |Total Gate Charge(VGS= -3.3V)|Qg|—|5.2|—|nC|VDS= -10V, ID= -4.9A<br>~~ee~~| |Total Gate Charge(VGS= -4.5V)<br>~~pT~~||—<br>~~es~~|6.7<br>~~ee~~|—<br>~~ee~~|nC<br>~~ee~~|| |Total Gate Charge(VGS= -8V)<br>~~pT~~||—<br>~~es~~|11.5<br>~~ee~~|—<br>~~ee~~|nC<br>~~ee~~|| |Gate-Source Charge<br>~~pT~~<br>~~—~~|Qgs<br>~~—~~|—<br>~~es~~<br>~~—~~|1.0<br>~~ee~~<br>~~—~~|—<br>~~ee~~<br>~~—~~|nC<br>~~ee~~<br>~~—~~|| |Gate-Drain Charge<br>~~—~~|Qgd<br>~~—~~<br>~~a~~|—<br>~~—~~<br>~~a~~|2.0<br>~~—~~<br>~~a~~|—<br>~~—~~<br>~~a~~|nC<br>~~—~~|| |Turn-On DelayTime<br>~~—~~<br>~~————~~|tD(ON) <br>~~—~~<br>~~————~~<br>~~a~~|—<br>~~—~~<br>~~————~~<br>~~a~~|3.5<br>~~—~~<br>~~————~~<br>~~a~~|—<br>~~—~~<br>~~————~~<br>~~a~~|ns<br>~~—~~<br>~~————~~|VDD= -10V, VGS= -4.5V,<br>RL= 2.6Ω, RG= 1Ω<br>~~————~~<br>~~ee~~| |Turn-On Rise Time<br>~~————~~|tR<br>~~————~~<br>~~a~~|—<br>~~————~~<br>~~a~~|3.6<br>~~————~~<br>~~a~~|—<br>~~————~~<br>~~a~~|ns<br>~~————~~|| |Turn-Off DelayTime<br>~~————~~|tD(OFF) <br>~~————~~<br>~~a~~|—<br>~~————~~<br>~~a~~|20.8<br>~~————~~<br>~~a~~|—<br>~~————~~<br>~~a~~|ns<br>~~————~~|| |Turn-Off Fall Time<br>~~————~~|tF<br>~~————~~<br>~~a~~|—<br>~~————~~<br>~~a~~|12.7<br>~~————~~<br>~~a~~|—<br>~~————~~<br>~~a~~|ns<br>~~————~~|| |BodyDiode Reverse RecoveryTime<br>~~ee~~|tRR<br>~~a~~<br>~~ee~~|—<br>~~a~~<br>~~ee~~|13.1<br>~~a~~<br>~~ee~~|—<br>~~a~~<br>~~ee~~|ns<br>~~ee~~|IS= -3.9A,dI/dt = 100A/μs<br>~~ee~~<br>~~ee~~| |BodyDiode Reverse RecoveryCharge<br>~~ee~~|QRR<br>~~a~~<br>~~ee~~|—<br>~~a~~<br>~~ee~~|3.9<br>~~a~~<br>~~ee~~|—<br>~~a~~<br>~~ee~~|nC<br>~~ee~~|IS= -3.9A,dI/dt = 100A/μs<br>~~ee~~<br>~~ee~~| Notes: 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 4 of 11 **www.diodes.com** DMC1028UFDB Document number: DS37634 Rev. 5 - 2 February 2020 © Diodes Incorporated **DMC1028UFDB** ## **Typical Characteristics - N-CHANNEL** **==> picture [489 x 653] intentionally omitted <==** **----- Start of picture text -----**<br> 20.0 15<br>18.0 We VGS = 4.5V a VGS = 1.8V VDS = 5V<br>16.0 12<br>14.0 VGS = 3.5V<br>12.0 VGS = 3.0V 9<br>10.0 i VGS = 2.5V —— TA = 125 [o] C<br>8.0 VGS = 2.0V VGS = 1.5V 6 TA = -55 [o] C<br>6.0 ,—_—_ xk<br>TA = 25 [o] C<br>4.0 3 TA = 150 [o] C<br>VGS = 1.2V VGS = 1.1V<br>2.0 TA = 85 [o] C<br>0.0 yo 0 pf<br>0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristic Figure 2 Typical Transfer Characteristic<br>0.05 0.1<br>0.045 Pi yyy yt yy 0.09 fo<br>0.04 V GS = 1.8V 0.08<br>0.035 Cee ZEEE 0.07 THERE<br>0.03 0.06<br>0.025 we VGS = 2.5V 0.05 fp<br>ID = 2.5A<br>0.02 0.04<br>HERE = he [E] [e]<br>0.015 0.03<br>Sea eo<br>0.01 V GS = 4.5V VGS = 3.3V 0.02 ID = 4.8A<br>0.005 0.01<br>CEE eo — —<br>ID = 5.2A<br>0 Pit T_ TELL fy 0 | | | | fe<br>0 2 4 6 8 10 12 14 16 18 20 1 2 3 4 5 6 7 8<br>I D, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs.<br>Figure 4 Typical Transfer Characteristic<br>Drain Current and Gate Voltage<br>0.03 1.8<br>VGS= 4.5V TA = 150 [o] C<br>TA = 125 [o] C<br>1.6<br>0.025<br>VGS = 4.5V, ID = 10A<br>cee = 1.4<br>TT ETT yy y<br>0.02<br>TA = 85 [o] C<br>1.2<br>Po Pw<br>TA = 25 [o] C<br>0.015<br>c or o 1 A VGS = 1.8V, ID = 3A<br>TA = -55 [o] C<br>0.01<br>o oo 0.8 e ee<br>0.005 0.6<br>UL EEE PTT TTT Ty<br>0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 5 Typical On-Resistance vs. Drain Current Figure 6 On-Resistance Variation with<br>and Temperature Temperature<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>, DRAIN-SOURCE<br>DS(ON)ON-RESISTANCE (Ω)<br>R<br>, DRAIN-SOURCE<br>(NORMALIZED)<br>DS(ON)ON-RESISTANCE (Ω)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> 5 of 11 **www.diodes.com** DMC1028UFDB Document number: DS37634 Rev. 5 - 2 February 2020 © Diodes Incorporated **DMC1028UFDB** ## **Typical Characteristics - N-CHANNEL** (continued) **==> picture [486 x 653] intentionally omitted <==** **----- Start of picture text -----**<br> 0.05 1.2<br>0.045 ee 1.1 Os<br>0.04 Pf | J | ft ft fg 1 PF | | | Ff | | ff<br>0.035 VGS = 1.8V, ID = 3A 0.9<br>0.8<br>0.03 S000) =a a ID = 1mA<br>_ 26 0.7 ——=Sne=<br>0.025 perm 0.6 oe _<br>0.02 eT | | | 0.5 S a<br>ID = 250µA<br>0.015 i ee 0.4 TT Sy<br>0.01 aT [Cd VGS = 4.5V, ID = 10A 0.3 PT|_| NS=<br>0.2<br>0.005<br>| 0.1 PF | | | Ff | | ff<br>0 | | | || || |ET| |ft tf 0 aes<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Junction<br>Temperature<br>20 10000<br>18 VGS = 0V oe || = f = 1MHz<br>16 Wl |ee| eeee<br>14 ee Ciss ee<br>|| 1000 e e<br>12 TA = 125 [o] C<br>10 f f e Coss S<br>TA = -55 [o] C<br>8 IE awe fC‘;eCé‘sSTS‘C(#R’”YNYNYYNN J<br>100 Crss<br>6 TA = 150 [o] C TA = 25 [o] C<br>4 ae || SS | __ S<br>2 ae. TA = 85 [o] C ee ee<br>0 Wy - 10 a<br>0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 12<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>8 100<br>R<br>DS(ON)<br>Limited<br>6 10<br>4 // 1 RN DC NTTmall<br>PW =10s<br>2 ra VDS = 6V, ID = 6.8A 0.1 ut TTJ(Max) A = 25= 150℃ ℃ ZINN PPWW =1s =100ms UW!<br>_/f VGS = 4.5V P IN W =10ms bSNN<br>Single Pulse<br>DUT on 1*MRP PW =1ms<br>0 0.01 Board HE PW =100µs |ETT<br>0 2 4 6 8 10 12 14 16 18 20 0.01 0.1 1 10 100<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fiure 11 Gate Charge Figure 12 SOA, Safe Operation Area<br>(Ω)<br>, DRAIN-SOURCE ON-RESISTANCE , GATE THRESHOLD VOLTAGE (V)<br>DS(ON) GS(TH)<br>R V<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> 6 of 11 DMC1028UFDB Document number: DS37634 Rev. 5 - 2 February 2020 © Diodes Incorporated **www.diodes.com** **DMC1028UFDB** ## **Typical Characteristics - P-CHANNEL** **==> picture [483 x 650] intentionally omitted <==** **----- Start of picture text -----**<br> 20.0 10<br>18.0 VVGSGS = -3.5V = -4.5V VGS = -3.0V VDS = -5V<br>16.0 8<br>14.0 Pea VGS = -2.5V Ey<br>12.0 VGS = -2.0V 6<br>10.0 ane oe<br>VGS = -1.8V<br>8.0 4<br>6.0 f = VGS = -1.5V TA = 125 [o] C | TA = -55 [o] C<br>4.0 2 TA = 150 [o] C<br>TA = 25 [o] C<br>2.0 VGS = -1.2V<br>TA = 85 [o] C<br>0.0 0<br>0 1 2 3 0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 13 Typical Output Characteristic Figure 14 Typical Transfer Characteristic<br>0.3 0.3<br>0.25 VGS = -1.5V 0.25<br>ID = -3.8A<br>0.2 TE)PTE) = 0.2 Aee r<br>ID = -3.3A<br>VGS = -1.8V<br>0.15 POE), 0.15 Rr<br>VGS = -2.5V<br>0.1 0.1<br>PY PA<br>0.05 aN 0.05 ID = -1.0A<br>VGS = -4.5V VGS = -3.3V<br>0 0<br>1 TA 3 5 7 9 11 13 15 17 19 21 = EEE 0 2 4 6 8<br>Figure 15 Typical On-Resistance vs. ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 16 Typical Transfer Characteristic<br>Drain Current and Gate Voltage<br>0.12 1.8<br>VGS= -4.5V<br>1.6<br>0.1 TA = 150 [o] C<br>TA = 125 [o] C<br>TT 1.4 FLT<br>0.08 eer) = (LIT VGS = -4.5V, ID = -5.0A T<br>1.2<br>0.06 p a Ly e<br>ananaenee 1 San? 400<br>TA = 85 [o] C TA = 25 [o] C VGS = -1.8V, ID = -1.0A<br>0.04<br>0.02 ae LLL TA = -55 [o] C 0.80.6 shnnnnnE eat<br>1 3 5 7 9 11 13 15 17 19 21 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 17 Typical On-Resistance vs. Drain Current Figure 18 On-Resistance Variation with<br>and Temperature Temperature<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>, DRAIN CURRENT (A)<br>, DRAIN CURRENT (A)ID ID<br>, DRAIN-SOURCE<br>DS(ON)ON-RESISTANCE (Ω)<br>R<br>, DRAIN-SOURCE<br>(NORMALIZED)<br>DS(ON)ON-RESISTANCE (Ω)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> 7 of 11 **www.diodes.com** DMC1028UFDB Document number: DS37634 Rev. 5 - 2 February 2020 © Diodes Incorporated **DMC1028UFDB** ## **Typical Characteristics - P-CHANNEL** (continued) **==> picture [485 x 648] intentionally omitted <==** **----- Start of picture text -----**<br> 0.14 1<br>0.12<br>Pt [Ltt] yy<br>VGS = -1.8V, ID = -1.0A 2 0.8 TEEPE ELL<br>0.1 eT ~<br>ID = -1mA<br>> ~~<br>0.6<br>0.08<br>ert fT | —™<br>| ee = Pe<br>0.06 agp? an 0.4 WN<br>ID = -250µA<br>0.04 — an NN<br>VGS = -4.5V, ID = -5.0A<br>— 0.2 iia.<br>0.02<br>0 CEE HEE 0 CELT<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 19 On-Resistance Variation with Figure 20 Gate Threshold Variation vs. Junction<br>Temperature Temperature<br>2018 e/a 10000 p f = 1MHz S<br>VGS = 0V<br>16 ee = =<br>14 f f 1000 po} | Ciss<br>12 f e ET===<br>10 ee SS =<br>TA = 150 [o] C<br>8 Coss<br>100<br>6 n/ TA = 125 [o] C a e e e<br>4 TA = 85 [o] C TA = 25 [o] C Crss<br>20 fFaN WY, [|] TA = -55 [o] C 10 >\Saaeunannn PEPEte aee err eeee<br>0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 12 14 16 18 20<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 21 Diode Forward Voltage vs. Current Figure 22 Typical Junction Capacitance<br>8 100<br>R<br>DS(ON)<br>Limited<br>6 10<br>ee NNO NG Maal<br>4 1 DC<br>PW =10s<br>TJ(Max) = 150℃<br>2 VDS = -10V, ID = -4.9A 0.1 TA = 25℃ PPW =1sW =100ms<br>VGS = -4.5V PW =10ms<br>Single Pulse<br>DUT on 1*MRP PW =1ms<br>Board PW =100µs<br>0 [ 0.01 eeeLENE HHill<br>0 2 4 6 8 10 12 0.1 1 10 100<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 23 Gate Charge Figure 24 SOA, Safe Operation Area<br>, DRAIN-SOURCE<br>DS(ON)ON-RESISTANCE (Ω)<br>R<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> 8 of 11 **www.diodes.com** DMC1028UFDB Document number: DS37634 Rev. 5 - 2 February 2020 © Diodes Incorporated **DMC1028UFDB** **==> picture [423 x 239] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>apan D=0.5 at tet0 ohLN a D=0.9 MIT0 a|<br>D=0.3 a all D=0.7 1<br>0.1 oealll SUEIN EE<br>D=0.1<br>SOerSEE elOeAR eet T eeTYee<br>D=0.05 [7] [seen] a<br>SSA [See] ee<br>EE ee A<br>D=0.02<br>0.01 ccer oe),FL TINE |MIE ||TINE LAIN ET|<br>D=0.01<br>ee A ee ee<br>FSI D=0.005 tT EEI RθJA(t)=r(t) * RθJA TTTLH<br>— [ACE]<br>RθJA=166℃/W<br>D=Single Pulse Duty Cycle, D=t1/t2<br>0.001<br>1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 25 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> ## **Typical Application Circuit** DMC1028UFDB is designed for Point-of-Load (POL) converter that is stepping down from a nominal 3.3V to 1V with a load current up to 3A. This is implemented with a separate ASIC that is PWM signaling the complementary MOSFETs to act as a synchronous buck converter. The control switch (Q2) is implemented with P-channel MOSFETs to avoid needing a charge pump and with the 3.3V to 1V step down, which has a duty cycle of 33%. This means that for 67% of the cycle, the synchronous switch (Q1) is on and efficiency is dominated by the conduction losses; hence, the need for low RDS(ON) N-channel MOSFETs. Whereas for the control switch (Q2), the gate charge needs to be minimized as the switching losses become significant. 9 of 11 **www.diodes.com** DMC1028UFDB Document number: DS37634 Rev. 5 - 2 February 2020 © Diodes Incorporated **DMC1028UFDB** ## **Package Outline Dimensions** Please see http://www.diodes.com/package-outlines.html for the latest version. **U-DFN2020-6 (Type B)** **==> picture [235 x 239] intentionally omitted <==** **----- Start of picture text -----**<br> A3<br>A1<br>A<br>Seating Plane<br>ee<br>D<br>D2 D2<br>z1<br>E z1 E2<br>k<br>L<br>e<br>z<br>b<br>(Pin #1 ID)<br>R0.150<br>**----- End of picture text -----**<br> **==> picture [100 x 161] intentionally omitted <==** **----- Start of picture text -----**<br> U-DFN2020-6<br>Type B<br>Dim Min Max Typ<br>A 0.545 0.605 0.575<br>A1 0.00 0.05 0.02<br>A3 - - 0.13<br>b 0.20 0.30 0.25<br>D 1.95 2.075 2.00<br>D2 0.50 0.70 0.60<br>e - - 0.65<br>E 1.95 2.075 2.00<br>E2 0.90 1.10 1.00<br>k - - 0.45<br>L 0.25 0.35 0.30<br>z - - 0.225<br>z1 - - 0.175<br>All Dimensions in mm<br>**----- End of picture text -----**<br> ## **Suggested Pad Layout** Please see http://www.diodes.com/package-outlines.html for the latest version. **U-DFN2020-6 (Type B)** **==> picture [190 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> X2<br>C<br>fea<br>X1(2x)<br>Y2 Y1(2x)<br>G<br>G1<br>Y<br>X<br>**----- End of picture text -----**<br> **==> picture [89 x 106] intentionally omitted <==** **----- Start of picture text -----**<br> Value<br>Dimensions<br>(in mm)<br>C 0.650<br>G 0.150<br>G1 0.450<br>X 0.350<br>X1 0.600<br>X2 1.650<br>Y 0.500<br>Y1 1.000<br>Y2 2.300<br>**----- End of picture text -----**<br> 10 of 11 **www.diodes.com** DMC1028UFDB Document number: DS37634 Rev. 5 - 2 February 2020 © Diodes Incorporated **DMC1028UFDB** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. ## **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: - A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. - B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2020, Diodes Incorporated **www.diodes.com** 11 of 11 **www.diodes.com** DMC1028UFDB Document number: DS37634 Rev. 5 - 2 February 2020 © Diodes Incorporated
Updated at June 9, 2026
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