DMC1018UPDWQ-13

**DMC1018UPDWQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Device**|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>TC= +25°C|
|---|---|---|---|
|Q1|12V|17mΩ @ VGS= 4.5V|31.3A|
|||25mΩ @ VGS= 2.5V|25.8A|
|Q2|-20V|38mΩ @ VGS= -4.5V|-20.9A|
|||53mΩ @ VGS= -2.5V|-17.7A|



## **Description and Applications** 

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: 

## **Features and Benefits** 

- 100% Unclamped Inductive Switching, Test in Production– Ensures More Reliable and Robust End Application 

- High Conversion Efficiency 

- Low RDS(ON) – Minimizes On State Losses 

- Low Input Capacitance 

- Fast Switching Speed 

- Wettable Flank for Improved Optical Inspection 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **The DMC1018UPDWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.** 

**https://www.diodes.com/quality/product-definitions/** 

## **Mechanical Data** 

   - Case: PowerDI[®] 5060-8 

- Motor Control 

- Power Management Functions 

- DC-DC Converters 

- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

 

- Weight: 0.097 grams (Approximate) 

**PowerDI5060-8/SWP (Type UXD)** 

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## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMC1018UPDWQ-13|PowerDI5060-8/SWP(Type UXD)|2,500/Tape & Reel|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

## Di 

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C1018UDW<br>YY WW<br>**----- End of picture text -----**<br>


C1018UD > = Manufacturer’s Marking W = Product Type Marking Code YYWW or YYWW = Date Code Marking YY or YY = Year (ex: 21 = 2021) WW = Week (01 to 53) 

_PowerDI is a registered trademark of Diodes Incorporated._ 

1 of 10 **www.diodes.com** 

DMC1018UPDWQ Document number: DS42853 Rev. 2 - 2 

February 2021 © Diodes Incorporated 

**DMC1018UPDWQ** 

|**Maximum Ratings **(@TA= +25°C, unless otherwise specified.)|
|---|
|**Characteristic**<br>**Symbol**<br>**Q1 Value**<br>**Q2 Value**<br>**Unit**<br>Drain-Source Voltage<br>VDSS<br>12<br>-20<br>V<br>Gate-Source Voltage<br>VGSS<br>±8<br>±12<br>V<br>Continuous Drain Current (Note 5)<br>TA= +25°C<br>TA= +70°C<br>ID<br>10<br>8<br>-6.7<br>-5.4<br>A<br>~~——~~<br>~~ee~~<br>~~oe~~<br>~~A~~|
|Continuous Drain Current (Note 6)<br>TC= +25°C<br>TC= +70°C<br>ID<br>31.3<br>25.0<br>-20.9<br>-16.7<br>A<br>Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) (Note 6)<br>IDM<br>125<br>-80<br>A<br>Maximum Continuous Body Diode Forward Current (Note 5)<br>IS<br>3.6<br>-3.2<br>A<br>Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%) (Note 6)<br>ISM<br>125<br>-83.6<br>A<br>Avalanche Current, L = 0.1mH<br>IAS<br>24.1<br>-16.4<br>A<br>Avalanche Energy, L = 0.1mH<br>EAS<br>29<br>13.5<br>mJ<br>~~A~~<br>~~——~~<br>~~ee~~<br>~~oo~~<br>~~——~~<br>~~ee ee ee~~<br>~~QO~~|
||
|**Thermal Characteristics**|
||
|**Characteristic**<br>**Symbol**<br>**Value**<br>**Unit**|
|Total Power Dissipation(Note 5)<br>TA= +25°C<br>PD<br>2.6<br>W|
|Thermal Resistance,Junction to Ambient(Note 5)<br>RθJA<br>48.3<br>°C/W|
|Total Power Dissipation(Note 6)<br>TC= +25°C<br>PD<br>25<br>W|
|Thermal Resistance,Junction to Case(Note 6)<br>RθJC<br>5.0<br>°C/W|
|Operatingand Storage Temperature Range<br>TJ, TSTG<br>-55 to +150<br>°C|



## **Electrical Characteristics Q1 N-Channel** (@TA = +25°C, unless otherwise specified.) 

||||||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7) **<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|12<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= 250μA<br>~~ee~~|
|Zero Gate Voltage Drain Current<br>~~ee~~|IDSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~<br>~~GD~~|1<br>~~ee~~<br>~~GD~~|µA<br>~~ee~~<br>~~GO~~|VDS= 12V, VGS= 0V<br>~~ee~~<br>~~GO~~|
|Gate-Source Leakage<br>~~GG~~|IGSS<br>~~GG~~|—<br>~~GG~~|—<br>~~GG~~<br>~~GD~~|±100<br>~~GG~~<br>~~GD~~|nA<br>~~GG~~<br>~~GO~~|VGS= ±8V, VDS= 0V<br>~~GG~~<br>~~GO~~|
|**ON CHARACTERISTICS(Note 7) **<br>~~GD~~<br>~~GO GO~~<br>~~GOGOGS(O~~<br>~~le~~|||||||
|Gate Threshold Voltage<br>~~GG~~<br>~~le~~|VGS(TH)<br>~~GG~~<br>|0.6<br>~~GG~~<br>|0.8<br>~~GG~~<br>~~GO~~<br>|1.5<br>~~GG~~<br>~~GO~~<br>|V<br>~~GG~~<br>~~GS~~<br>|VDS= VGS, ID= 250μA<br>~~GG~~<br>~~(O~~<br>|
|Static Drain-Source On-Resistance<br>~~le~~<br>~~————~~<br>~~er~~|RDS(ON)<br>~~ee~~<br>~~er~~|—<br>~~ee~~<br>~~er~~|9.6<br>~~GO~~<br>~~ee~~|17<br>~~GO~~<br>~~ee~~|mΩ<br>~~GS~~<br>~~ee~~|VGS= 4.5V, ID= 11.8A<br>~~(O~~<br>~~ee~~|
|||—<br>~~ee~~<br>~~er~~|11.2<br>~~GO~~<br>~~ee~~|25<br>~~GO~~<br>~~ee~~|mΩ<br>~~GS~~<br>~~ee~~|VGS= 2.5V, ID= 9.8A<br>~~(O~~<br>~~ee~~|
|Diode Forward Voltage<br>~~le ~~<br>~~————~~<br>~~er~~|VSD<br> ~~ee~~<br>~~er~~|—<br>~~ee~~<br>~~er~~|0.7<br>~~GO ~~<br>~~ee~~|1.2<br> ~~GO ~~<br>~~ee~~|V<br> ~~GS~~<br>~~ee~~|VGS= 0V, IS= 2.9A<br>~~(O~~<br>~~ee~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br> ~~ee~~<br>~~————~~<br>~~er~~<br>~~———~~<br>~~ee~~<br>~~ee~~|||||||
|Input Capacitance<br> <br>~~————~~<br>~~er~~<br>~~GO~~<br>~~———~~|Ciss<br> ~~ee~~<br>~~er~~<br>~~GO~~<br>~~ee~~|—<br>~~ee~~<br>~~er~~<br>~~GO~~<br>~~ee~~|1525<br>~~ee~~<br>~~GO~~<br>~~ee~~|—<br>~~ee~~<br>~~GO~~<br>~~ee~~|pF<br>~~ee~~<br>~~GO~~<br>~~ee~~|VDS= 6V, VGS= 0V,<br>f = 1MHz<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|Output Capacitance<br>~~———~~|Coss<br>~~ee~~|—<br>~~ee~~|329<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~ee~~|—<br>~~ee~~|303<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~||
|Gate Resistance<br>~~———~~<br>~~rr~~|Rg<br>~~ee~~<br>~~rr~~|—<br>~~ee~~<br>~~rr~~|1.6<br>~~ee~~<br>~~rr~~<br>~~ee~~|—<br>~~ee~~<br>~~rr~~<br>~~ee~~|Ω<br>~~ee~~<br>~~rr~~<br>~~ee~~|VDS= 0V, VGS= 0V, f = 1MHz<br>~~ee~~<br>~~ee~~<br>~~rr~~|
|Total Gate Charge(VGS= 4.5V)<br>~~rr~~<br>~~ce~~|Qg<br>~~rr~~<br>~~ce~~|—<br>~~rr~~<br>~~ce~~|17.1<br>~~rr~~<br>~~ce~~<br>~~ee~~|—<br>~~rr~~<br>~~ce~~<br>~~ee~~|nC<br>~~rr~~<br>~~ce~~<br>~~ee~~|VDS= 6V, ID= 11.8A<br>~~rr~~<br>~~ce~~|
|Total Gate Charge(VGS= 8V)<br>~~ce~~|Qg<br>~~ce~~|—<br>~~ce~~|30.4<br>~~ce~~<br>~~ee~~|—<br>~~ce~~<br>~~ee~~|nC<br>~~ce~~<br>~~ee~~||
|Gate-Source Charge<br>~~ce~~|Qgs<br>~~ce~~|—<br>~~ce~~|2.6<br>~~ce~~<br>~~ee~~|—<br>~~ce~~<br>~~ee~~|nC<br>~~ce~~<br>~~ee~~||
|Gate-Drain Charge<br>~~ce~~<br>~~————~~|Qgd<br>~~ce~~<br>~~————~~|—<br>~~ce~~<br>~~————~~|4.3<br>~~ce~~<br>~~ee~~<br>~~————~~|—<br>~~ce~~<br>~~ee~~<br>~~————~~|nC<br>~~ce~~<br>~~ee~~<br>~~————~~||
|Turn-On Delay Time<br>~~————~~<br>~~—~~|tD(ON)<br>~~————~~<br>~~eS~~|—<br>~~————~~<br>~~eS~~|6.6<br>~~ee~~<br>~~————~~<br>~~eS~~|—<br>~~ee~~<br>~~————~~<br>~~eS~~|ns<br>~~ee~~<br>~~————~~<br>~~eS~~|VDD= 6V, RL= 6Ω ,<br>VGS= 4.5V, Rg= 6Ω, ID= 1A<br>~~eS~~|
|Turn-On Rise Time<br>~~GO~~<br>~~—~~|tR<br>~~GO~~<br>~~eS~~|—<br>~~GO~~<br>~~eS~~|5.7<br>~~GO~~<br>~~eS~~|—<br>~~GO~~<br>~~eS~~|ns<br>~~GO~~<br>~~eS~~||
|Turn-Off Delay Time<br>~~—~~|tD(OFF)<br>~~eS~~|—<br>~~eS~~|41.5<br>~~eS~~|—<br>~~eS~~|ns<br>~~eS~~||
|Turn-Off Fall Time<br>~~—~~|tF<br>~~eS~~|—<br>~~eS~~|21.9<br>~~eS~~|—<br>~~eS~~|ns<br>~~eS~~||
|Body Diode Reverse Recovery Time<br>~~i~~|tRR<br>~~i~~|—<br>~~i~~|14.3<br>~~i~~|—<br>~~i~~|ns<br>~~i~~|IF= 11.8A, di/dt = 100A/μs<br>~~i~~|
|Body Diode Reverse Recovery Charge<br>~~i~~|QRR<br>~~i~~|—<br>~~i~~|2.3<br>~~i~~|—<br>~~i~~|nC<br>~~i~~|IF= 11.8A, di/dt = 100A/μs<br>~~i~~|



- Notes: 5. Device mounted on FR-4 substrate PC board, 2oz. copper, with thermal bias to bottom layer 1inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 

   8. Guaranteed by design. Not subject to product testing. 

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DMC1018UPDWQ Document number: DS42853 Rev. 2 - 2 

February 2021 © Diodes Incorporated 

**DMC1018UPDWQ** 

## **Electrical Characteristics Q2 P-Channel** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** **Q2 P-Channel**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **Q2 P-Channel**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **Q2 P-Channel**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **Q2 P-Channel**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **Q2 P-Channel**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **Q2 P-Channel**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** **Q2 P-Channel**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|-20|—|—|V|VGS= 0V, ID= -250µA|
|Zero Gate Voltage Drain Current|IDSS<br>~~I~~|—<br>~~I~~|—<br>~~I (OD~~|-1<br>~~(OD~~|µA<br>~~(Of~~|VDS= -16V, VGS= 0V<br>~~(Of~~|
|Gate-Source Leakage<br>~~ID~~|IGSS<br>~~ID~~<br>~~I~~|—<br>~~ID~~<br>~~I~~|—<br>~~ID~~<br>~~I (OD~~|±100<br>~~ID~~<br>~~(OD~~|nA<br>~~ID~~<br>~~(Of~~|VGS= ±12V, VDS= 0V<br>~~ID~~<br>~~(Of~~|
|**ON CHARACTERISTICS(Note 7)**<br>~~I~~<br>~~I~~<br>~~I (OD(Of~~<br>~~I~~<br>~~I~~<br>~~(OD(OO(O~~|||||||
|Gate Threshold Voltage<br>~~I~~|VGS(TH)<br>~~I~~<br>~~I~~|-0.6<br>~~I~~<br>~~I~~|-0.85<br>~~I~~<br>~~(OD~~|-1.5<br>~~I~~<br>~~(OD~~|V<br>~~I~~<br>~~(OO~~|VDS= VGS, ID= -250µA<br>~~I~~<br>~~(O~~|
|Static Drain-Source On-Resistance<br>~~SE~~|RDS(ON)<br>~~I~~<br>~~SE~~|—<br>~~I~~<br>~~SE~~|30<br>~~(OD~~<br>~~SE~~|38<br>~~(OD ~~<br>~~SE~~|mΩ<br> ~~(OO ~~<br>~~SE~~<br>~~(OO~~|VGS= -4.5V, ID= -8.9A<br> ~~(O~~<br>~~SE~~|
|||—<br>~~SE~~<br>~~I~~|41<br>~~SE~~<br>~~I~~|53<br>~~SE~~<br>~~(OD~~||VGS= -2.5V, ID= -6.9A<br>~~SE~~<br>~~(OO~~|
|Diode Forward Voltage<br>~~DU~~|VSD<br>~~DU~~|—<br>~~DU~~<br>~~I~~|-0.8<br>~~DU~~<br>~~I~~|-1.2<br>~~DU~~<br>~~(OD~~|V<br>~~DU~~<br>~~(OO~~|VGS= 0V, IS= -2.9A<br>~~DU~~<br>~~(OO~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~I I (OD (OO~~<br>~~eeesesOe~~|||||||
|Input Capacitance<br>~~PO~~<br>~~es~~|Ciss<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|866<br>~~es~~<br>~~es~~|—<br>~~es~~<br>~~es~~|pF<br>~~es~~<br>~~Oe~~|VDS= -6V, VGS= 0V,<br>f = 1.0MHz<br>~~es~~|
|Output Capacitance<br>~~es~~|Coss<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|167<br>~~es~~<br>~~es~~|—<br>~~es~~<br>~~es~~|||
|Reverse Transfer Capacitance<br>~~es~~|Crss<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|131<br>~~es~~<br>~~es~~|—<br>~~es~~<br>~~es~~|||
|Gate Resistance<br>~~ee~~<br>~~———~~|RG<br>~~ee~~<br>~~ee~~|—<br>~~ee ~~<br>~~ee~~|4.9<br> ~~es ~~<br>~~ee~~|—<br> ~~es ~~<br>~~ee~~<br>~~e~~|Ω<br> ~~Oe~~<br>~~ee~~<br>~~e~~|VDS= 0V, VGS= 0V, f = 1.0MHz<br>~~ee~~<br>~~ee~~|
|Total Gate Charge(VGS= -4.5V)<br>~~ee~~<br>~~———~~|Qg<br>~~ee~~|—<br>~~ee~~|8.6<br>~~ee~~|—<br>~~ee~~<br>~~e~~|nC<br>~~ee~~<br>~~e~~|VDS= -6V, ID= -8.9A<br>~~ee~~<br>~~ee~~|
|Total Gate Charge(VGS= -8V)<br>~~ee~~<br>~~———~~|Qg<br>~~ee~~|—<br>~~ee~~|19<br>~~ee~~|—<br>~~ee~~<br>~~e~~|||
|Gate-Source Charge<br>~~———~~|Qgs|—|1.5|—<br>~~e~~|||
|Gate-Drain Charge<br>~~———~~<br>~~Se~~|Qgd<br>~~ee~~|—<br>~~ee~~|2.5<br>~~ee~~|—<br>~~e~~<br>~~ee~~|||
|Turn-On Delay Time<br>~~———~~<br>~~Se~~|tD(ON)<br>~~ee~~|—<br>~~ee~~|5.8<br>~~ee~~|—<br>~~e~~<br>~~ee~~|ns<br>~~e~~<br>~~a~~|VDD= -6V, RL= 6Ω<br>VGS= -4.5V, RG= 6Ω, ID= -1A<br>~~ee~~<br>~~a~~|
|Turn-On Rise Time<br>~~———~~<br>~~Se~~|tR<br>~~ee~~|—<br>~~ee~~|7.2<br>~~ee~~|—<br>~~e~~<br>~~ee~~|||
|Turn-Off Delay Time<br>~~Se~~|tD(OFF)<br>~~ee~~|—<br>~~ee~~|28.1<br>~~ee~~|—<br>~~ee~~|||
|Turn-Off Fall Time<br>~~Se~~<br>~~a~~|tF<br>~~ee~~<br>~~a~~|—<br>~~ee~~<br>~~a~~|14.6<br>~~ee~~<br>~~a~~|—<br>~~ee~~<br>~~a~~|||
|Body Diode Reverse Recovery Time<br>~~Se~~<br>~~a~~|tRR<br>~~ee~~<br>~~a~~<br>~~RD~~|—<br>~~ee ~~<br>~~a~~<br>~~nD~~|9.8<br> ~~ee~~<br>~~a~~<br>~~I UO~~|—<br>~~ee~~<br>~~a~~<br>~~UO~~|ns<br>~~a~~<br>~~UO~~|IF= -8.9A, di/dt = -100A/μs<br>~~a~~|
|Body Diode Reverse Recovery Charge<br>~~a~~|QRR<br>~~a~~<br>~~RD~~|—<br>~~a~~<br>~~nD~~|2.7<br>~~a~~<br>~~I UO~~|—<br>~~a~~<br>~~UO~~|nC<br>~~a~~<br>~~UO~~|IF= -8.9A, di/dt = -100A/μs<br>~~a~~|



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DMC1018UPDWQ Document number: DS42853 Rev. 2 - 2 

February 2021 © Diodes Incorporated 

**DMC1018UPDWQ** 

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50.0 30<br>45.0 VGS = 2.0V VDS = 5.0V<br>Ba VGS = 4.5V 25 o<br>40.0<br>VGS = 4.0V<br>35.0 VGS = 3.0V VGS = 1.8V<br>20<br>30.0 fF VGS = 2.5V<br>25.0 © aa 15 ee |<br>20.0<br>Yo 10 ee |e<br>15.0<br>10.0 VGS = 1.5V TJ = 150℃ TJ = 85℃<br>5<br>5.0 a VGS = 1.4V — TJ = 125℃ TJ = 25℃<br>0.0 {———_—_—— VGS = 1.2V 0 po fRK TJ = -55℃<br>0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>12.0 50<br>45<br>11.0 VGS = 2.5V 40 AT ID = 11.8A S<br>35<br>10.0<br>30 Pot te | |<br>9.0 25 Pot tT | |<br>20 Pt tT | | |<br>8.0 VGS = 4.5V<br>15<br>10 a<br>7.0<br>5 aee<br>6.0 0 Pet | EE<br>0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8<br>ID, DRAIN-SOURCE CURRENT (A) Figure 4. Typical Transfer CharacteristicVGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current and<br>Gate Voltage<br>20 2<br>18 VGS = 4.5V TS 1.8 a<br>16<br>TJ = 150℃ 1.6<br>14 VGS = 2.5V, ID = 9.8A<br>12 SE TJ = 125℃ S 1.4 Te<br>TJ = 85℃<br>10 1.2<br>8 a TJ = 25℃ 1 Seene VGS = 4.5V, ID = 11.8A<br>6 TJ = -55℃<br>0.8<br>4 Sa ae ee i<br>0.6<br>20 ET ee 0.4  cadeeeeeCOPE EE<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 5. Typical On-Resistance vs. Drain Current and<br>Figure 6. On-Resistance Variation with Junction<br>Temperature<br>Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>(mΩ)<br>, DRAIN-SOURCE ON-RESISTANCE (mΩ) , DRAIN-SOURCE ON-RESISTANCEDS(ON)<br>DS(ON) R<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>,  DRAIN-SOURCE ON-RESISTANCE (mΩ)<br>DS(ON)<br>R<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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DMC1018UPDWQ Document number: DS42853 Rev. 2 - 2 

February 2021 © Diodes Incorporated 

**DMC1018UPDWQ** 

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20 1.5<br>18<br>16 P| | | ftftttft Le 1.2 Py TTT] yy<br>1412 ne VGS = 2.5V, ID = 9.8A e 0.9 — ID = 1mA<br>10 So o— ee Sennen<br>ID = 250μA<br>8 p eee e 0.6 = |<br>6 VGS = 4.5V, ID = 11.8A<br>4 a A= 0.3 TELLS<br>2 P| ™S<br>0 P| | | || | ftttttlt 0 Ply | yy dy<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 7. On-Resistance Variation with Junction  Figure 8. Gate Threshold Variation vs. Junction<br>Temperature Temperature<br>10000<br>30<br>f = 1MHz<br>VGS = 0V<br>25 Ciss<br>eee = —S ————<br>1000<br>20<br>Coss<br>15 y e Se<br>Crss<br>100<br>10<br>TJ = 150 [o] C TJ = 85 [o] C<br>5 fe TJ = 125 [o] C it TJ = 25 [o] C = = ==<br>0 ff TJ = -55 [o] C 10<br>0 2 4 6 8 10 12<br>0 0.3 0.6 0.9 1.2 1.5<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 10. Typical Junction Capacitance<br>Figure 9. Diode Forward Voltage vs. Current<br>8 1000<br>R<br>DS(ON)<br>Limited<br>7 PW = 1µs<br>6 100<br>PW = 10µs<br>5 PW = 100µs<br>4 10 PW = 1ms<br>3 VDS = 6V, ID = 11.8A TJ(Max) = 150 ℃ PPWW = 100ms          = 10ms<br>2 1 TC = 25 ℃<br>Single Pulse<br>DC<br>DUT on Infinite<br>1<br>Heatsink<br>VGS = 10V<br>0 VY | | | ft tf 0.1 cane CI<br>0 5 10 15 20 25 30 0.1 1 10 100<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area<br>(mΩ)<br>, DRAIN-SOURCE ON-RESISTANCE<br>, GATE THRESHOLD VOLTAGE (V)<br>DS(ON)<br>R GS(TH)<br>V<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1<br>D = 0.7<br>Same ear rien a eat<br>D = 0.5<br>a a aN ee coe<br>D = 0.3 te Te D = 0.9 TT<br>a HUI ETT ETE ITT<br>0.1 SPO e D = 0.1 Lemcnc Ae o eeA oeAVEUTee ee<br>}—Lei| || gmrtiy TTee TT ETTTTTT<br>D = 0.05<br>FA RAH ETHIE<br>Hy i ee a<br>MAA N D = 0.02 TTI LTTE TIE PTE TTP PTT<br>D = 0.01<br>0.01 ofi s) TIT EINE0 | VI1T TI<br>LA fT D = 0.005 et<br>FAL TTT oT TT<br>ArrZ| D = Single Pulse ec e PT PT PTPye<br>YT TTT TIT TI ETP PET RθJC (t) = r(t) * RθJC |<br>RθJC = 5℃/W<br>Duty Cycle, D = t1/t2<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
30.0 30<br>VGS = -3.0V VDS = -5.0V<br>25.0 VGS = -2.5V 25<br>YP f e<br>20.0 20<br>a a eee<br>15.0 VGS = -10V 15<br>VGS VGS = -4.0V= -4.5V VGS = -2.0V<br>10.0 | @ae eneey 10<br>VGS = -1.8V<br>5.0 | __— Zee VGS = -1.2V VGS = -1.4V aa VGS = -1.5V 5 TTJJ = 150 = 125℃℃ T | JT = 25J = 85℃℃<br>TJ = -55℃<br>0.0 0<br>0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 14. Typical Output Characteristic Figure 15. Typical Transfer Characteristic<br>60.0 200<br>180<br>50.0 160<br>140<br>40.0 ooa t 120 eOFREEEEEe<br>VGS = -2.5V<br>100<br>30.0 80 ID = -8.9A<br>VGS = -4.5V 60 |<br>20.0 — 40 ci cee ene<br>20<br>10.0 COPPA) 0 PREEEREEBES<br>0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8<br>ID, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 16. Typical On-Resistance vs. Drain Current and<br>Figure 17. Typical Transfer Characteristic<br>Gate Voltage<br>60 2<br>VGS = -4.5V<br>1.8<br>50 So TJ = 150℃ Pf | tT te tT<br>TJ = 125℃ 1.6<br>40<br>Se 1.4 C oo VGS = -4.5V, ID = -8.9A<br>TJ = 85℃<br>30 a 1.2 a oe<br>TJ = 25℃<br>1<br>20 a andi<br>TJ = -55℃ VGS = -2.5V, ID = -6.9A<br>0.8<br>10 PE RT |<br>0 | 0.60.4 EEE<br>0 ptt 5 10 15 20 25 30 -50 oR -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 18. Typical On-Resistance vs. Drain Current and  Figure 19. On-Resistance Variation with Junction<br>Temperature Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>(mΩ)<br>, DRAIN-SOURCE ON-RESISTANCE (mΩ) , DRAIN-SOURCE ON-RESISTANCEDS(ON)<br>DS(ON) R<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>,  DRAIN-SOURCE ON-RESISTANCE (mΩ)<br>DS(ON)<br>R<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
80 1.5<br>70<br>Pt tT tt tt 1.2 Pf<br>60<br>pi ft it tt ao<br>50 VGS = -2.5V, ID = -6.8A<br>0.9<br>40 ee e<br>et e 0.6<br>30<br>ae aan<br>20 VGS = -4.5V, ID = -8.9A<br>0.3<br>10 T CL<br>CECE EE<br>0 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0<br>TJ, JUNCTION TEMPERATURE (℃) TJJ, JUNCTION TEMPERATURE (℃)<br>Figure 20. On-Resistance Variation with Temperature<br>(mΩ)<br>, DRAIN-SOURCE ON-RESISTANCE , GATE THRESHOLD VOLTAGE (V)<br>DS(ON) GS(TH)<br>R V<br>**----- End of picture text -----**<br>


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1.5<br>1.2 Pf yt yy fd<br>ao ID = -1mA<br>0.9<br>ee<br>0.6 SR ID = -250μA<br>ee<br>0.3<br>ES<br>Pitt EEL<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TJJ, JUNCTION TEMPERATURE (℃)<br>Figure 21. Gate Threshold Variation vs. Junction<br>Temperature<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br>


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10000<br>f = 1MHz<br>e<br>e e ee eee<br>Ciss<br>1000<br>e e e<br>Coss<br>100 c Crss S<br>ee —— ——<br>a ee ee ee ee<br>10 EEE<br>0 2 4 6 8 10 12 14 16<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 23. Typical Junction Capacitance<br>100<br>RDS(ON) PW = 1µs<br>Limited<br>amarillomal<br>10<br>PW = 10µs<br>PW = 100µs<br>PW = 1ms<br>1 TJ(Max) = 150 ℃ PW = 10ms<br>mal TC = 25 ℃ PW = 100ms                                       Ne nT<br>Single Pulse DC<br>DUT on Infinite<br>Heatsink =e<br>0.1 VGS = -10V ee<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 25. SOA, Safe Operation Area<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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30<br>VGS = 0V<br>25 eee |e<br>20<br>eee ||<br>15<br>10 TJ = 150 [o] C //Via<br>TJ = 125 [o] C<br>5 TJ = 85 [o] C Ll. TJ = 25 [o] C<br>Yi TJ = -55 [o] C<br>4)<br>0<br>0 0.3 0.6 0.9 1.2 1.5<br>VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 22. Diode Forward Voltage vs. Current<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


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8<br>7<br>6 Sean 4ae<br>5<br>4<br>3<br>VDS = -6V, ID = -8.9A<br>2 fn<br>1<br>ALT TT TE tt<br>0 fli tELE LEE<br>0 2 4 6 8 10 12 14 16 18 20<br>Qg (nC)<br>Figure 24. Gate Charge<br> (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**PowerDI5060-8/SWP (Type UXD)** 

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PowerDI5060-8/SWP<br>D (Type UXD)<br>D1 Dim  Min  Max  Typ<br>8 5 A  0.90 1.10 1.00<br>A1  0.00 0.05 --<br>b  0.30 0.50 0.41<br>b2  0.20 0.35 0.25<br>A a === b4  0.25REF<br>c  0.230 0.330 0.277<br>E1 E<br>A1 D  5.15 BSC<br>1.900 1.400 c Seating Plane D1  4.70 5.10 4.90<br>e D2  1.46 1.66 1.55<br>D3 3.78 4.18 3.98<br>E  6.40 BSC<br>E1  5.60 6.00 5.80<br>1 4<br>E2  3.46 3.86 3.66<br>Ø 1.000 Depth 0.07± 0.030 DETAIL A E2a  4.195 4.595 4.395<br>e/2 e 1.27BSC<br>b(8x) k  1.05 --  --<br>1 L  0.635 0.835 0.735<br>L La  0.635 0.835 0.735<br>pa ==== L1  0.200 0.400 0.300<br>b2(2x) D3 k M  3.205 4.005 3.605<br>W  0.025 0.225 0.125<br>θ  10°  12°  11°<br>W A θ1  6°  8°  7°<br>E2 D2 D2 All Dimensions in mm<br>E3 M<br>DETAIL A<br>La<br>‘Art ====<br>| en I 8 df, b4(8x) an: L1 7<br>ested Pad Layout yout out<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>PowerDI5060-8/SWP (Type UXD)<br>X2<br>Value<br>Dimensions<br>- L n ur Y1 | (in mm)<br>C  1.270<br>G  0.660<br>G1  0.820<br>X  0.610<br>Y2 X1 X1<br>X1  1.720<br>Y3 X2  4.420<br>Y  1.270<br>G1<br>Y1  1.020<br>C Y2  3.810<br>ae = Y3 6.610<br>Y(4x)<br>' ==<br>foo! X(8x) G<br>4x0<br>4x0<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout yout out** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

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8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

Copyright © 2021 Diodes Incorporated 

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