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DMC1016UPD-13
Dual MOSFET, Complementary N and P Channel, 12 V, 12 V, 9.5 A, 9.5 A, 0.017 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: PowerDI5060
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2.3W
- Power Dissipation P Channel: 2.3W
- Drain Source Voltage Vds N Channel: 12V
- Drain Source Voltage Vds P Channel: 12V
- Continuous Drain Current Id N Channel: 9.5A
- Continuous Drain Current Id P Channel: 9.5A
- Drain Source On State Resistance N Channel: 0.017ohm
- Drain Source On State Resistance P Channel: 0.02ohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.252 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **DMC1016UPD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET PowerDI5060-8**
## **Product Summary**
|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|---|
|||||
|Device|V(BR)DSS|RDS(ON)|ID<br>TA= +25°C|
|Q1|12V|17mΩ @ VGS= 4.5V|9.5A|
|||25mΩ @ VGS= 2.5V|7.8A|
|Q2|-20V|20mΩ @ VGS= -4.5V|-8.7A|
|||25mΩ @ VGS= -2.5V|-7.8A|
## **Description and Applications**
This new generation Complementary Pair Enhancement Mode MOSFET has been designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Loadswitch.
- Notebook Battery Power Management
## **Features and Benefits**
- Thermally Efficient Package-Cooler Running Applications
- High Conversion Efficiency
- Low RDS(ON) – Minimizes On State Losses
- Low Input Capacitance
- Fast Switching Speed
- **ESD Protected Gate for Q2 P-Channel**
- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)**
- **Halogen and Antimony Free. “Green” Device (Note 3)**
- **For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q101, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at**
-
- **https://www.diodes.com/products/automotive/automotive products/.**
- **This part is qualified to JEDEC standards (as references in AEC-Q101) for High Reliability. https://www.diodes.com/quality/product-definitions/**
- DC-DC Converters
- Loadswitch
## **Mechanical Data**
- Case: PowerDI[®] 5060-8
- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish – 100% Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e3**
- Terminal Connections: See Diagram Below
-
- Weight: 0.097 grams (Approximate)
PowerDI5060-8 (Type C)
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D1 D2<br>S1 D1<br>G1 D1<br>G1 G2 S2 D2<br>G2 D2<br>S1<br>Pin1 Gate Protection Diode S2<br>Top View<br>Top View Bottom View Q1 N-Channel MOSFET Q2 P-Channel MOSFET Pin Configuration<br>**----- End of picture text -----**<br>
## **Ordering Information** (Note 4)
|**Part Number**|**Case**|**Packaging**|
|---|---|---|
|DMC1016UPD-13|PowerDI5060-8 (Type C)|2500 /Tape &Reel|
- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
_PowerDI is a registered trademark of Diodes Incorporated._
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**DMC1016UPD**
## **Marking Information**
D1 D1 D2 D2 . = Manufacturer’s Marking C1016UD = Product Type Marking Code **C1016UD** YYWW = Date Code Marking YY = Year (ex: 16 = 2016) **YY WW** WW = Week (01 to 53) S1 G1 S2 G2
## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.)
|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|||**Symbol**|**Q1 Value**<br>~~ee~~|**Q2 Value**<br>~~ee~~|**Units**|
|Drain-Source Voltage<br>~~ee~~|||VDSS<br>~~ee~~|12<br>~~ee~~<br>~~ee~~|-20<br>~~ee~~<br>~~ee~~|V<br>~~ee~~|
|Gate-Source Voltage<br>~~ee~~|||VGSS<br>~~ee~~|±8<br>~~ee~~<br>~~ee~~|±8<br>~~ee~~<br>~~ee~~|V<br>~~ee~~|
|Continuous Drain Current (Note 5) VGS= 4.5V<br>~~ee~~|Steady<br>State<br>~~ee~~<br>~~i]~~|TA= +25°C<br>TA= +70°C<br>~~ee~~<br>~~i]~~<br>~~|~~|ID<br>~~ee~~<br>~~|~~|9.5<br>7.6<br>~~ee ~~<br>~~ee~~<br>~~|~~|-8.7<br>-7.0<br> ~~ee~~<br>~~ee~~<br>~~|~~|A<br>~~ee~~<br>~~|~~|
||t<10s<br>~~ee~~<br>~~i]~~|TA= +25°C<br>TA= +70°C<br>~~ee~~<br>~~i]~~<br>~~|~~|ID<br>~~ee~~<br>~~|~~|13.0<br>10.4<br>~~ee~~<br>~~|~~<br>~~GO~~|-12.0<br>-9.6<br>~~ee~~<br>~~|~~|A<br>~~ee~~<br>~~|~~|
|Maximum BodyDiode Forward Current (Note 5)<br>~~i]~~<br>~~|~~<br>~~GO~~|||IS<br>~~|~~<br>~~GO~~|2.6<br>~~| ~~<br>~~GO~~<br>~~GO~~|-2.6<br> ~~|~~<br>~~GO~~|A<br>~~|~~<br>~~GO~~|
|Pulsed Drain Current (10µs pulse, duty cycle = 1%)<br>~~_——~~|||IDM|65<br>~~GO~~|-60|A|
|Avalanche Current(Note 6)L = 0.1mH<br>~~_——~~|||IAS|20|-27|A|
|Avalanche Energy (Note 6)L = 0.1mH<br>~~_——~~|||EAS|25|38|mJ|
## **Thermal Characteristics**
|**Thermal Characteristics**|**Thermal Characteristics**||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|2.3|W|
||TA= +70°C||1.5||
|Thermal Resistance, Junction to Ambient (Note 5)|Steadystate|RθJA|55|°C/W|
||t<10s||29||
|Thermal Resistance, Junction to Case||RθJC|6.2||
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6 . IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
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**DMC1016UPD**
**Electrical Characteristics Q1 N-Channel** (@TA = +25°C, unless otherwise specified.)
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||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|GO|Characteristic|Symbol|Min|Typ|CO|Max|Unit|I(|Test Condition|
|OFF CHARACTERISTICS (Note 7)|
|Ge|Drain-Source Breakdown Voltage|BVDSS|12|||V|VGS = 0V, ID = 250µA|
|Zero Gate Voltage Drain Current|IDSS|||1|µA|VDS = 12V, VGS = 0V|
|Gate-Source Leakage|IGSS|||100|nA|VGS = ±8V, VDS = 0V|
|ON CHARACTERISTICS (Note 7)|
|oo|GCOSGO|
|OO|Gate Threshold Voltage|VGS(TH)|0.6|0.8|1.5|V|VDS = VGS, ID = 250µA|
||9.0|17|VGS = 4.5V, ID = 11.8A|
|ne|Static Drain-Source On-Resistance|RDS(ON)||11|25|mΩ|VGS = 2.5V, ID = 9.8A|
|eG|Diode Forward Voltage|VSD|Ge||0.7|GO|1.2|QO|V|VGS = 0V, IS = 2.9A|
|DYNAMIC CHARACTERISTICS (Note 8)|
|pT|Input Capacitance|Ciss||1454||
|Output Capacitance|Coss||336||pF|VDS = 6V, VGS = 0V,|
|f = 1.0MHz|
|ee|Reverse Transfer Capacitance|Crss||311||
|Gate Resistance|RG||1.6||Ω|VDS = 0V, VGS = 0V, f = 1.0MHz|
|Total Gate Charge (VGS = 4.5V)|Qg||18||
|Total Gate CharGate-Source Charge ge (VGS = 8V)|QQggs||3.1 32||nC|VDS = 6V, ID = 11.8A|
|Gate-Drain Charge|Qgd||4.3||
|———|Turn-On Delay Time|tD(ON)||6.6||ee|
|Turn-On Rise Time|tR||9.6||VDD = 6V, RL = 6Ω|
|ns|
|Turn-Off Delay Time|tD(OFF)||42.5||VGS = 4.5V, RG = 6Ω, ID = 1A|
|es|Turn-Off Fall Time|tF||ee|22.5||
|ee|Body Diode Reverse Recovery Time|tRR|—|16.6|—|ns|IF = 11.8A, di/dt = 100A/μs|
|Body Diode Reverse Recovery Charge|QRR|—|2.8|—|nC|IF = 11.8A, di/dt = 100A/μs|
|a|Ge|NO|GO|
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Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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## **Electrical Characteristics Q2 P-Channel** (@TA = +25°C, unless otherwise specified.)
||||||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~ce~~|**Symbol**<br>|**Min**<br>|**Typ**<br>|**Max**<br>|**Unit**<br>|**Test Condition**<br>|
|**OFF CHARACTERISTICS (Note 7)**<br>~~ce~~<br>~~CO~~<br>~~GO~~|||||||
|Drain-Source Breakdown Voltage<br>~~ceGG~~|BVDSS<br>~~GG~~|-20<br>~~GG~~|—<br>~~GG~~<br>~~CO~~|—<br>~~GG~~<br>~~CO~~|V<br>~~GG~~<br>~~GO~~|VGS= 0V,ID= -250μA<br>~~GG~~|
|Zero Gate Voltage Drain Current<br>~~ee~~|IDSS<br>~~ee~~|—<br>~~ee~~|—<br>~~CO~~<br>~~ee~~|-1<br>~~CO~~<br>~~ee~~|µA<br>~~GO~~<br>~~ee~~|VDS= -20V,VGS= 0V<br>~~ee~~|
|Gate-Source Leakage<br>~~ee~~|IGSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|±10<br>~~ee~~|µA<br>~~ee~~|VGS= ±8V,VDS= 0V<br>~~ee~~|
|**ON CHARACTERISTICS(Note 7)**|||||||
|Gate Threshold Voltage<br>~~i~~|VGS(TH)|-0.35<br>~~===2>——~~|-0.6<br>~~===2>——~~|-1.0<br>~~===2>——~~|V<br>~~===2>——~~|VDS= VGS,ID= -250μA<br>~~===2>——~~|
|Static Drain-Source On-Resistance<br>~~i~~|RDS(ON)|—<br>~~===2>——~~|14<br>~~===2>——~~|20<br>~~===2>——~~|mΩ<br>~~===2>——~~<br>~~GO~~|VGS= -4.5V,ID= -7.0A<br>~~===2>——~~|
|||—<br>~~===2>——~~|17<br>~~===2>——~~|25<br>~~===2>——~~||VGS= -2.5V,ID= -5.0A<br>~~===2>——~~|
|||—<br>~~===2>——~~|22<br>~~===2>——~~|40<br>~~===2>——~~||VGS= -1.8V,ID= -3.0A<br>~~===2>——~~|
|||—<br>~~===2>——~~<br>~~GO~~|26<br>~~===2>——~~<br>~~GO~~|80<br>~~===2>——~~<br>~~GO~~||VGS= -1.5V,ID= -1.0A<br>~~===2>——~~|
|Diode Forward Voltage<br>~~i~~<br>~~Ge~~|VSD<br>~~Ge~~|—<br>~~===2>——~~<br>~~Ge~~<br>~~GO~~|-0.8<br>~~===2>——~~<br>~~Ge~~<br>~~GO~~|-1.2<br>~~===2>——~~<br>~~Ge~~<br>~~GO~~|V<br>~~===2>——~~<br>~~Ge~~<br>~~GO~~|VGS= 0V,IS= -1.0A<br>~~===2>——~~<br>~~Ge~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~i~~<br>~~===2>——~~<br>~~GO~~<br>~~GO~~<br>~~GO~~<br>~~ee~~|||||||
|Input Capacitance<br>~~po~~<br>~~ee~~|Ciss|—|3103|—|pF|VDS= -15V, VGS= 0V,<br>f = 1.0MHz|
|Output Capacitance<br>~~ee~~|Coss|—|351|—|||
|Reverse Transfer Capacitance<br>~~ee~~|Crss|—|239|—|||
|Gate Resistance<br>~~ee~~<br>~~———~~|RG||12|<br>~~e~~|Ω<br>~~e~~|VDS= 0V, VGS= 0V, f = 1.0MHz<br>~~ee~~|
|Total Gate Charge(VGS= -4.5V)<br>~~ee~~<br>~~———~~|Qg||32|<br>~~e~~|nC<br>~~e~~|VDS= -6V, ID= -8.9A<br>~~ee~~|
|Total Gate Charge(VGS= -8V)<br>~~———~~|Qg||56|<br>~~e~~|||
|Gate-Source Charge<br>~~———~~|Qgs||4.5|<br>~~e~~|||
|Gate-Drain Charge<br>~~———~~|Qgd|<br>~~ee~~|6.1<br>~~ee~~|<br>~~e~~|||
|Turn-On Delay Time<br>~~———~~<br>~~es~~|tD(ON)<br>~~es~~|<br>~~es~~<br>~~ee~~|8.1<br>~~es~~<br>~~ee~~|<br>~~e~~<br>~~es~~|ns<br>~~e~~<br>~~es~~<br>~~ee~~|VDD= -6V, RL= 6Ω<br>VGS= -4.5V, RG= 6Ω, ID= -1A<br>~~ee~~<br>~~es~~<br>~~ee~~|
|Turn-On Rise Time<br>~~———~~<br>~~es~~|tR<br>~~es~~|<br>~~es~~<br>~~ee~~|16.0<br>~~es~~<br>~~ee~~|<br>~~e~~<br>~~es~~|||
|Turn-Off Delay Time<br>~~es~~|tD(OFF)<br>~~es~~|<br>~~es~~<br>~~ee~~|150<br>~~es~~<br>~~ee~~|<br>~~es~~|||
|Turn-Off Fall Time<br>~~es~~<br>~~ee~~|tF<br>~~es~~<br>~~ee~~|<br>~~es~~<br>~~ee~~<br>~~ee~~|82<br>~~es~~<br>~~ee~~<br>~~ee~~|<br>~~es~~<br>~~ee~~|||
|BodyDiode Reverse RecoveryTime<br>~~ee~~|tRR<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|20.6<br>~~ee~~<br>~~ee~~|—<br>~~ee~~|ns<br>~~ee~~|IF= -8.9A, di/dt = -100A/μs<br>~~ee~~|
|Body Diode Reverse Recovery Charge<br>~~a~~|QRR|—|8.3|—|nC|IF= -8.9A, di/dt = -100A/μs|
- Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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## **Typical Characteristics - N-CHANNEL**
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50.0<br>45.0 VGS = 2.5V<br>VGS = 3.0V<br>40.0 aa / VGS = 3.5V To<br>VGS = 4.0V<br>35.0<br>VGS = 2.0V<br>30.0 f—<br>25.0<br>VGS = 4.5V<br>Ane<br>20.0<br>VGS = 8V<br>15.0<br>Bo o<br>10.0 VGS = 1.5V<br>5.0<br>VGS = 1.2V<br>0.0 A P<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic<br>0.015<br>0.012<br>VGS = 2.5V<br>0.009<br>VGS = 4.5V<br>0.006<br>0.003<br>0<br>0 5 10 15 20 25 30<br>ID, DRAIN-SOURCE CURRENT (A)<br>Figure 3. Typical On-Resistance vs Drain Current and<br>Gate Voltage<br>0.02<br>0.018 VGS= 4.5V<br>0.016 Po) JSS<br>0.014 TJ = 150 [o] C TJ = 125 [o] C<br>0.012 ey<br>0.01<br>TJ = 85 [o] C<br>0.008 SS eS<br>TJ = 25 [o] C<br>0.006 ee ee<br>TJ = -55 [o] C<br>0.004 eee e<br>0.002 e e<br>0 se<br>0 5 10 15 20 25 30<br>ID, DRAIN CURRENT (A)<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>(Ω)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
Figure 5. Typical On-Resistance vs Drain Current and Temperature
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30<br>VDS= 5V<br>25<br>|<br>20<br>f -<br>15<br>ee |<br>10<br>TJ = 125 [o] C TJ = 85 [o] C<br>5 TJ = 150 [o] C TJ = 25 [o] C<br>TJ = -55 [o] C<br>0 Wy),<br>0 0.5 1 1.5 2 2.5<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 2. Typical Transfer Characteristic<br>0.1<br>0.08 ULE ELL<br>ID = 11..8A<br>0.06 The e<br>0.04<br>BIRRRae<br>0.02 UWE LL<br>ID = 9.8A<br>S s<br>0<br>0 1 2 3 4 5 6 7 8<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 4. Typical Transfer Characteristic<br>2.5<br>2<br>1.5 VGS = 2.5V, ID = 10A<br>1<br>VGS = 4.5V, ID = 15A<br>0.5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 6. On-Resistance Variation with Junction<br>Temperature<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
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## **Typical Characteristics - N-CHANNEL** (Cont.)
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0.02 1.5<br>0.015<br>VGS = 2.5V, ID = 10A 1<br>0.01<br>ae— ID = 1mA<br>VGS = 4.5V, ID = 15A 0.5 oo “<br>0.005 ID = 250µA<br>0 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ ) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Junction Figure 8. Gate Threshold Variation vs Junction<br>Temperature Temperature<br>30 10000<br>VGS = 0V f=1MHz<br>25<br>ee ||| == are<br>Ciss<br>—————<br>20 || 1000 a ee<br>Coss<br>15 —<br>Crss<br>10 100 fF<br>ee TJ = 150 [o] C ei} TJ = 85 [o] C PO ES fFE ft<br>5 TJ = 125 [o] C fhy TJ = 25 [o] C |——| | |<br>TJ = -55 [o] C<br>0 WV.Y). 10 | a a | a | | | ff<br>0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 12<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>8 100<br>R<br>DS(ON)<br>Limited<br>6 Vy, 10 SO TNTBest Set<br>DC<br>4 AL 1 OS PW =10s A<br>PW =1s<br>PW =100ms<br>2 Sf VDS = 6V, ID = 11.8A 0.1 TJ(Max)=150 ℃ PW =10ms el<br>TA=25 ℃ PW =1ms<br>Single Pulse PW =100µs<br>DUT on 1*MRP Board<br>VGS=4.5V<br>0 PTTL 0.01 [CoCo iit<br>0 5 10 15 20 25 30 35 40 0.01 0.1 1 10 100<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>GS(TH)<br>V<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>
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**DMC1016UPD**
## **Typical Characteristics - P-CHANNEL**
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50.0 30<br>45.0 VGS = -8V VGS = -2.5V VDS= -5V<br>25<br>40.0 VGS = -3.0V<br>35.0 VGS = -2.0V 20<br>30.0<br>25.0 VGS = -1.8V 15<br>20.0 VGS = -3.5V<br>15.0 VGS = -4.0V VGS = -1.5V 10<br>| e e ee<br>10.0 TJ= 150 [o] C TJ= 85 [o] C<br>5<br>5.0 VGS = -4.5V VGS = -1.2V TJ= 125 [o] C TJ= 25 [o] C<br>0.0 ke—r——— 0 ffip TJ= -55 [o] C<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 0.5 1 1.5 2 2.5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 13. Typical Output Characteristic Figure 14. Typical Transfer Characteristic<br>0.05 0.1<br>ID = -7A<br>0.04 | ) 0.08 L R<br>VGS = -1.5V<br>0.03 YY VGS = -1.8V 0.06 HEEL<br>0.02 VGS = -2.5V 0.04<br>—— Wey<br>0.01 VGS = -4.5V 0.02<br>F SS LN<br>ID = -3A<br>0 S ee 0<br>0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 15. Typical On-Resistance vs Drain Current and Figure 16. Typical Transfer Characteristic<br>Gate Voltage<br>0.024 2<br>VGS = -4.5V<br>0.022 e eee<br>TJ = 150 [o] C<br>0.02 a 1.5 VGS = -2.5V, ID = -5A<br>0.018 TJ = 125 [o] C<br>p p<br>0.016 TJ = 85 [o] C 1 VGS = -4.5V, ID = -10A<br>0.014<br>TJ = 25 [o] C<br>0.012 a 0.5<br>0.01 a<br>TJ = -55 [o] C<br>0.008 Seisame — 0<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 17. Typical On-Resistance vs Drain Current and Figure 18. On-Resistance Variation with junction<br>Temperature Temperature<br>, DRAIN CURRENT (A)<br>, DRAIN CURRENT (A) ID ID<br>(Ω) (Ω)<br>, DRAIN-SOURCE ON-RESISTANCE , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>(Ω)<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R DS(ON)<br>R<br>**----- End of picture text -----**<br>
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## **Typical Characteristics - P-CHANNEL** (Cont.)
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0.04 1<br>0.035<br>Pf tT | | | ty 0.8 PTT | yy dd<br>0.03<br>PEP ey SS<br>0.025 PPP rey 0.6 RE ID = -1mA |<br>0.02 VGS = -2.5V, ID = -5A<br>0.015 pee s 0.4 ID = -250µA<br>0.01 ae VGS = -4.5V, ID = -10A rt 0.2 ETL TEES<br>0.005 - _<br>0 ceereere})~=—COLL 0 LE I<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ ) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 19. On-Resistance Variation with Junction Figure 20. Gate Threshold Variation vs Junction<br>Temperature Temperature<br>30 10000<br>VGS = 0V = f=1MHz<br>25<br>eee ||e ====— Ciss ee<br>20 e e<br>pt tT | | tT | tt<br>| i seeeeeseee<br>15 1000<br>eK<br>10 Coss<br>TJ = 150 [o] C TJ = 85 [o] C<br>5 TJ = 125 [o] C TJ = 25 [o] C Crss<br>YY, HHS SSS<br>TJ = -55 [o] C<br>0 D 100 CCA EEE<br>0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 12 14 16 18 20<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 21. Diode Forward Voltage vs. Current Figure 22. Typical Junction Capacitance<br>8 100<br>R<br>DS(ON)<br>Limited<br>6 10<br>DC<br>4 / 1 PRD<br>PW =10s<br>PW =1s<br>PW =100ms<br>2 VDS = -6V, ID = -8.9A 0.1 TTJ(Max)A=25=150 ℃ ℃ PW =10ms SSS SE<br>Single Pulse PW =1ms<br>DUT on 1*MRP Board PW =100µs<br>VGS= -4.5V<br>0 0.01 ll<br>0 5 10 15 20 25 30 35 40 45 50 55 60 0.1 1 10 100<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 23. Gate Charge Figure 24. SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>GS(TH)<br>DS(ON) V<br>R<br>, SOURCE CURRENT (A) IS , JUNCTION CAPACITANCE (pF) CT<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>
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PXODES<br>1<br>SSSEE————=SS wo<br>po PH Corot<br>D=0.9<br>Ne Se<br>Sooo D=0.5 CELT<br>D=0.7<br>D=0.3 Tt A TCT<br>p Sa<br>0.1 S eTT S<br>RR<br>EO D=0.1 a”CC gr a oo<br>mrt || AMAT<br>D=0.05<br>Co a Aaa<br>IIE PETITE EE<br>D=0.02<br>wy,<br>0.01 bil YW<br>SoLr D=0.01 pwr || FT| ALAv [aire] iit CT|TyTTTE [ie] TTT| [eae] TI FLUE [Seimei] N)ee<br>Po TTC AAU PET<br>|e D=0.005 a ee ee RθJA (t)=r(t) * RθJA |<br>D=Single Pulse RθJA=105 ℃ /W<br>Duty Cycle, D=t1 / t2<br>0.001<br>1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 25. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>
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## **Package Outline Dimensions**
Please see http://www.diodes.com/package-outlines.html for the latest version.
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PowerDI5060-8 (Type C)<br>**----- End of picture text -----**<br>
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PowerDI5060-8 (Type C)<br>. D —— Dim Min Max Typ<br>D1 A 0.90 1.10 1.00<br>A1 0 0.05 0.02<br>0 (4x) b 0.33 0.51 0.41<br>b1 0.300 0.366 0.333<br>x c b2 0.20 0.35 0.25<br>E1 E A1 c 0.23 0.33 0.277<br>y qa | = | Seating Plane == D 5.15 BSC<br>e D1 4.85 4.95 4.90<br>l e y. == D2 1.40 1.60 1.50<br>1<br>Ø 1.000 Depth 0.07± 0.030 0 1(4x) D3 - - 3.98<br>E 6.15 BSC<br>E1 5.75 5.85 5.80<br>b1(8x) DETAIL A E2 3.56 3.76 3.66<br>e/2<br>b(8x) e 1.27BSC<br>1 t-— a ee ee ee<br>k - - 1.27<br>L far D3 k b2(2x) — k1 L 0.56 0.51 0.71 - 0.61 -<br>, k1 _, A ==<br>La 0.51 0.71 0.61<br>E2 D2 L4 L1 0.05 0.20 0.175<br>eat D2 M ——— DETAIL A ot L4 - - 0.125<br>M 3.50 3.71 3.605<br>x - - 1.400<br>La L1<br>nanan) == y - - 1.900<br>θ 10° 12° 11°<br>== θ1 6° 8° 7°<br>All Dimensions in mm<br>**----- End of picture text -----**<br>
## **Suggested Pad Layout**
Please see http://www.diodes.com/package-outlines.html for the latest version.
**PowerDI5060-8 (Type C)**
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X4<br>8<br>ere<br>Y1<br>X3 X2<br>Y2<br>Y3<br>G1<br>X1<br>Y(4x)<br>g 4oo d: Ly)<br>1<br>G<br>fu X C e<br>**----- End of picture text -----**<br>
|**Dimensions**|**Value**<br>**(in mm)**|
|---|---|
|**C**|1.270|
|**G**<br>**G1**|0.660|
|**G1**|0.820|
|**X**|0.610|
|**X1**|3.910|
|**X2**|1.650|
|**X3**|1.650|
|**X4**|4.420|
|**Y**|1.270|
|**Y1**|1.020|
|**Y2**|3.810|
|**Y3**|6.610|
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## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
## **LIFE SUPPORT**
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
- A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
- B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
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Updated at June 9, 2026
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