DMC1015UPD-13

Dual MOSFET, Complementary N and P Channel, 12 V, 12 V, 9.5 A, 9.5 A, 0.017 ohm

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Manufacturer: DIODES INC.
Product type: Dual MOSFETs
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 8Pins
Channel Type: Complementary N and P Channel
Product Range: -
Qualification: -
Transistor Case Style: PowerDI5060
Operating Temperature Max: 150°C
Power Dissipation N Channel: 2.3W
Power Dissipation P Channel: 2.3W
Drain Source Voltage Vds N Channel: 12V
Drain Source Voltage Vds P Channel: 12V
Continuous Drain Current Id N Channel: 9.5A
Continuous Drain Current Id P Channel: 9.5A
Drain Source On State Resistance N Channel: 0.017ohm
Drain Source On State Resistance P Channel: 0.035ohm
Delivery and price
Units per pack	5000
Price	0.271 €
Current stock	500+
Lead time	30 days
Datasheet
**DMC1015UPD** 

**COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET PowerDI5060-8** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|---|
|||||
|Device|BVDSS|RDS(ON)|ID<br>TA= +25°C|
|Q1|12V|17mΩ @ VGS= 4.5V|9.5A|
|||25mΩ @ VGS= 2.5V|7.8A|
|Q2|-20V|35mΩ @ VGS= -4.5V|-6.8A|
|||55mΩ @ VGS= -2.5V|-5.3A|



## **Description and Applications** 

This new generation Complementary Pair Enhancement Mode MOSFET has been designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Load switch. 

## **Features and Benefits** 

   - Thermally Efficient Package – Cooler Running Applications 

   - High Conversion Efficiency 

   - Low RDS(ON) – Minimizes On State Losses 

   - Low Input Capacitance 

   - Fast Switching Speed 

   - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

   - **Halogen and Antimony Free. “Green” Device (Note 3)** 

   - **For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at** 

      - 

      - **https://www.diodes.com/products/automotive/automotive products/.** 

   - **This part is qualified to JEDEC standards (as references in AEC-Q101) for High Reliability. https://www.diodes.com/quality/product-definitions/** 

- Notebook Battery Power Management 

- DC-DC Converters 

- Load Switch 

## **Mechanical Data** 

- Case: PowerDI[®] 5060-8 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish – 100% Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e3** 

- Terminal Connections: See Diagram Below 

- Weight: 0.097 grams (Approximate) 

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PowerDI5060-8 (Type C) D1<br>D2<br>S1 D1<br>G1 G2 G1 D1<br>S2 D2<br>S1 S2 G2 D2<br>od ee<br>Pin1<br>Top View<br>Top View  Bottom View  Q1 N-Channel MOSFET Q2 P-Channel MOSFET Pin Configuration<br>Ordering Information (Note 4)<br>Part Number Case Packaging<br>DMC1015UPD-13 PowerDI5060-8 (Type C) 2,500 / Tape & Reel<br>**----- End of picture text -----**<br>


- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

_PowerDI is a registered trademark of Diodes Incorporated._ DMC1015UPD Document number: DS37992 Rev. 4 - 2 

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**DMC1015UPD** 

## **Marking Information** 

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D1 D1 D2 D2<br>.       = Manufacturer’s Marking<br>C1015UD = Product Type Marking Code<br>C1015UD YYWW = Date Code Marking<br>YY = Year (ex: 16 = 2016)<br>YY WW WW = Week (01 to 53)<br>S1 G1 S2 G2<br>**----- End of picture text -----**<br>


## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|||**Symbol**<br>~~ee~~|**Q1 Value**<br>~~ee~~|**Q2 Value**<br>~~ee~~|**Unit**|
|Drain-Source Voltage<br>~~ee~~|||VDSS<br>~~ee~~<br>~~ee~~|12<br>~~ee~~<br>~~ee~~|-20<br>~~ee~~<br>~~ee~~|V<br>~~ee~~|
|Gate-Source Voltage<br>~~ee~~|||VGSS<br>~~ee~~<br>~~ee~~|±8<br>~~ee~~<br>~~ee~~|±8<br>~~ee~~<br>~~ee~~|V<br>~~ee~~|
|Continuous Drain Current (Note 5) VGS= 4.5V<br>~~ee~~|Steady<br>State<br>~~ee~~|TA= +25°C<br>TA= +70°C<br>~~ee~~|ID<br>~~ee~~<br>~~ee~~|9.5<br>7.6<br>~~ee ~~<br>~~ee~~|-6.8<br>-5.4<br> ~~ee~~<br>~~ee~~|A<br>~~ee~~|
||t<10s<br>~~ee~~<br>~~a~~|TA= +25°C<br>TA= +70°C<br>~~ee~~|ID<br>~~ee~~|13.0<br>10.4<br>~~ee~~|-9.4<br>-7.5<br>~~ee~~|A<br>~~ee~~|
|Maximum BodyDiode Forward Current (Note 5)<br>~~GO~~|||IS<br>~~GO~~|2.4<br>~~GO~~|-2.2<br>~~GO~~|A<br>~~GO~~|
|Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)<br>~~_——~~|||IDM|65|-35|A|
|Avalanche Current(Note 6)L = 0.1mH<br>~~_——~~|||IAS|22|-20|A|
|Avalanche Energy (Note 6)L = 0.1mH<br>~~_——~~|||EAS|25|20|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|2.3|W|
||TA= +70°C||1.5||
|Thermal Resistance, Junction to Ambient (Note 5)|SteadyState|RθJA|56|°C/W|
||t<10s||29||
|Thermal Resistance, Junction to Case||RθJC|5.4||
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



- Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

6. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 

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**DMC1015UPD** 

## **Electrical Characteristics Q1 N-Channel** (@TA = +25°C, unless otherwise specified.) 

|**Characteristic**<br>**Symbol**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>**Test Condition**|
|---|
|**OFF CHARACTERISTICS(Note 7)**<br>Drain-Source Breakdown Voltage<br>BVDSS<br>12<br><br><br>V<br>VGS= 0V, ID= 250µA<br>Zero Gate Voltage Drain Current<br>IDSS<br><br><br>1<br>µA<br>VDS= 12V, VGS= 0V<br>Gate-Source Leakage<br>IGSS<br><br><br>100<br>nA<br>VGS= ±8V, VDS= 0V<br>**ON CHARACTERISTICS(Note 7)**<br>Gate Threshold Voltage<br>VGS(TH)<br>0.6<br>0.8<br>1.5<br>V<br>VDS= VGS, ID= 250µA<br>Static Drain-Source On-Resistance<br>RDS(ON)<br><br>9.6<br>17<br>mΩ<br>VGS= 4.5V, ID= 11.8A<br><br>11<br>25<br>VGS= 2.5V, ID= 9.8A<br>~~re~~<br>~~oo~~<br>~~GG~~<br>~~CO~~<br>~~GO~~<br>~~ne~~|
|Diode Forward Voltage<br>VSD<br><br>0.7<br>1.2<br>V<br>VGS= 0V, IS= 2.9A<br>**DYNAMIC CHARACTERISTICS(Note 8)**<br>Input Capacitance<br>Ciss<br><br>1495<br><br>pF<br>VDS= 6V, VGS= 0V,<br>f = 1.0MHz<br>Output Capacitance<br>Coss<br><br>310<br><br>Reverse Transfer Capacitance<br>Crss<br><br>285<br><br>Gate Resistance<br>Rg<br><br>1.6<br><br>Ω<br>VDS= 0V, VGS= 0V, f = 1.0MHz<br>Total Gate Charge(VGS= 3.3V)<br>Qg<br><br>11.5<br><br>nC<br>VDS= 6V, ID= 11.8A<br>Total Gate Charge(VGS= 4.5V)<br>Qg<br><br>15.6<br><br>Gate-Source Charge<br>Qgs<br><br>2.3<br><br>Gate-Drain Charge<br>Qgd<br><br>4.6<br><br>Turn-On Delay Time<br>tD(ON)<br><br>5.7<br><br>~~ee~~<br>~~TT TT!~~<br>~~ee~~<br>~~a~~<br>~~———~~<br>~~ee~~|
|nS<br>VDD= 6V, RL= 6Ω<br>VGS= 4.5V, Rg= 6Ω, ID= 1A<br>Turn-On Rise Time<br>tR<br><br>10.1<br><br>Turn-Off Delay Time<br>tD(OFF)<br><br>40.4<br><br>Turn-Off Fall Time<br>tF<br><br>22.5<br><br>Body Diode Reverse Recovery Time<br>tRR<br>—<br>16.4<br>—<br>nS<br>IF= 2.9, di/dt = 100A/μs<br>BodyDiode Reverse RecoveryCharge<br>QRR<br>—<br>3.2<br>—<br>nC<br>IF= 2.9A, di/dt = 100A/μs<br>~~ee~~<br>~~a~~<br>~~Ge~~<br>~~NO~~<br>~~GO~~|
|**Electrical Characteristics** **Q2 P-Channel**(@TA= +25°C, unless otherwise specified.)|
|**Characteristic**<br>**Symbol**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>**Test Condition**<br>**OFF CHARACTERISTICS (Note7)**<br>Drain-Source Breakdown Voltage<br>BVDSS<br>-20<br>—<br>—<br>V<br>VGS= 0V,ID= -250μA<br>Zero Gate Voltage Drain Current<br>IDSS<br>—<br>—<br>-1<br>µA<br>VDS= -20V,VGS= 0V<br>~~**a**~~<br>~~A A~~<br>~~A~~<br>~~Ge~~<br>~~GO~~<br>~~GO~~<br>~~O~~~~**O**~~<br>~~a~~<br>~~O~~|
|Gate-Source Leakage<br>IGSS<br>—<br>—<br>±100<br>nA<br>VGS= ±8V,VDS= 0V<br>**ON CHARACTERISTICS(Note 7)**<br>Gate Threshold Voltage<br>VGS(TH)<br>-0.6<br>-0.8<br>-1.5<br>V<br>VDS= VGS,ID= -250μA<br>Static Drain-Source On-Resistance<br>RDS(ON)<br>—<br>25<br>35<br>mΩ<br>VGS= -4.5V,ID= -8.9A<br>34<br>55<br>VGS= -2.5V,ID= -6.9A<br>~~ss~~<br>~~Ge~~<br>~~GO~~<br>~~GO~~<br>~~OO~~<br>~~ee~~|
|Diode Forward Voltage<br>VSD<br>—<br>-0.8<br>-1.2<br>V<br>VGS= 0V,IS= -2.9A<br>**DYNAMIC CHARACTERISTICS(Note 8)**<br>Input Capacitance<br>Ciss<br>—<br>1745<br>—<br>pF<br>VDS= -10V, VGS= 0V,<br>f = 1.0MHz<br>Output Capacitance<br>Coss<br>—<br>146<br>—<br>Reverse Transfer Capacitance<br>Crss<br>—<br>119<br>—<br>Gate Resistance<br>Rg<br><br>7.5<br><br>Ω<br>VDS= 0V, VGS= 0V, f = 1.0MHz<br>Total Gate Charge(VGS= -3.3V)<br>Qg<br><br>11.2<br><br>nC<br>VDS= -6V, ID= -8.9A<br>Total Gate Charge(VGS= -4.5V)<br>Qg<br><br>15.4<br><br>Gate-Source Charge<br>Qgs<br><br>1.9<br><br>Gate-Drain Charge<br>Qgd<br><br>2.9<br><br>Turn-On Delay Time<br>tD(ON)<br><br>7.4<br><br>nS<br>VDD= -6V, Rg= 6Ω<br>VGS= -4.5V, ID= -1A<br>Turn-On Rise Time<br>tR<br><br>6.2<br><br>Turn-Off Delay Time<br>tD(OFF)<br><br>60.1<br><br>Turn-Off Fall Time<br>tF<br><br>16.3<br><br>BodyDiode Reverse RecoveryTime<br>tRR<br><br>9.2<br><br>nS<br>IF=  -2.9A, di/dt = -100A/μs<br>Body Diode Reverse Recovery Charge<br>QRR<br><br>2.8<br>—<br>nC<br>IF=  -2.9A, di/dt = -100A/μs<br>~~Be~~<br>~~a~~<br>~~G~~<br>~~ee~~<br>~~Oe~~<br>~~a~~<br>~~a~~<br>~~—————~~<br>~~ee~~<br>~~a~~<br>~~————~~<br>~~ee~~<br>~~a~~|
|Notes:<br>7. Short duration pulse test used to minimize self-heating effect.|
|8. Guaranteed by design. Not subject to product testing.|



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## **Typical Characteristics - N-CHANNEL** 

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30.0 30<br>25.0 1  VGS  VGS= 2.5V =2.0V  25 VDS = 5.0V<br> VGS = 3.0V<br>20.0  V VGS GS = 8.0V = 4.5V  20<br>15.0 fo o 15 ar<br>i 10 TJ=125 ℃<br>10.0<br> VGS = 1.5V<br>5 TJ=150 ℃ TJ=85 ℃<br>5.0 TJ=25 ℃<br> VGS = 1.2V   VGS = 1.3V  TJ=-55 ℃<br>0<br>0.0 0.5 0.8 1.1 1.4 1.7 2<br>0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V)  Figure 2. Typical Transfer Characteristic VGS, GATE-SOURCE VOLTAGE (V)<br>Figure  1. Typical Output Characteristic<br>0.1<br>0.012<br>0.011 0.08<br> VGS = 2.5V<br>0.01<br>0.06<br>ID = 9.8A<br>0.009<br>0.04<br>0.008  VGS = 4.5V<br>0.007 0.02 ID = 11.8A<br>0.006 0<br>0 5 10 15 20 25 30 0 2 4 6 8<br>ID, DRAIN-SOURCE CURRENT (A)   VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current and  Figure 4. Typical Transfer Characteristic<br>Gate Voltage<br>1.8<br>0.014<br>VGS = 4.5V<br>1.6<br>150 ℃<br>0.012<br>T 125 ℃ FA 1.4 etree  VGS = 4.5V, ID = 11.8A<br>0.01<br>S 85 ℃ es 1.2 to<br>0.008<br>ee 25 ℃ 1  VGS = 2.5V, ID = 9.8A<br>0.006 O CP) a<br>-55 ℃ 0.8 e ee<br>0.004 a 0.6<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150<br>Typical Characteristics - ID, DRAIN CURRENT (A)  N-CHANNEL  (Cont.)  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs. Drain Current and  Figure 6. On-Resistance Variation with Junction<br>Junction Temperature  Temperature<br>, DRAIN CURRENT (A)  , DRAIN CURRENT (A)<br>ID ID<br>W)<br>)<br>(W<br>, DRAIN-SOURCE ON-RESISTANCE  , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)<br>(W<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>**----- End of picture text -----**<br>


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## **Typical Characteristics - N-CHANNEL** (continued) 

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0.02 1<br>0.018<br>0.016<br>0.8 ID = 1mA<br>0.014 BS AA<br>0.012  VGS = 2.5V, ID = 9.8A<br>0.01 Pe e 0.6 | ID = 250μA  S Q<br>0.008 ee > ea YY<br>0.006  VGS = 4.5V, ID = 11.8A<br>0.4<br>0.004 eer I LSQh<br>0.002 Oe - QO<br>0 | {| | | {| | | {[ | 0.2 Pe} ty yyy ys<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ )  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Junction  Figure 8. Gate Threshold Variation vs. Junction<br>Temperature  Temperature<br>10000<br>30<br>VGS = 0V  f=1MHz<br>25 a<br>20 ee e a Ciss<br>|| + t  _+—<br>1000<br>15<br>ff<br>TJ = 85 [o] C  Coss<br>10<br>TJ = 125 [o] C<br>TJ = 25 [o] C<br>5 TJ = 150 [o] C  / Crss  S=S><br>TJ = -55 [o] C<br>Yo 100<br>0<br>0 2 4 6 8 10<br>0 0.3 0.6 0.9 1.2 1.5<br>VSD, SOURCE-DRAIN VOLTAGE (V)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 10. Typical Junction Capacitance<br>Figure 9. Diode Forward Voltage vs. Current<br>4.5 100<br>4 RDS(ON) Limited  PW =100µs<br>3.5<br>10<br>3<br>2.5 PW =1ms<br>2 1 PW =10ms<br>1.5 VDS = 6V, ID = 11.8A  PW =100ms<br>PW =1s<br>1 0.1 TJ(Max) = 150 ℃  TC = 25 ℃ PW =10s<br>Single Pulse  DC<br>0.5 DUT on 1*MRP Board<br>0 0.01 V GS = 4.5V<br>0 2 4 6 8 10 12 14 16 0.01 0.1 1 10 100<br>Typical Characteristics - P-CHA Qg (nC)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge  Figure 12. SOA, Safe Operation Area<br>)<br>W<br>, DRAIN-SOURCE ON-RESISTANCE ( , GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>DS(ON) V<br>R<br> (pF)<br>Is, SOURCE CURRENT (A)  , JUNCTION CAPACITANCE<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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**DMC1015UPD** 

## **Typical Characteristics - P-CHANNEL** 

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30.0 30<br>25.0 WKS  VGS V=-3.0V GS = -2.5V  | 25 VDS = -5V  ff<br>20.0  VGS = -4.5V  20<br> VGS = -8.0V<br>15.0 ———EE  VGS = -2.0V  15 f<br>10<br>10.0<br>5.0 ——-  VGS = -1.5V  5 ee TTJ=150J=125 ℃℃ TTJJ=25=85 ℃ A ℃ e<br>0.0 Se e  VGS = -1.2V  0 aeA TJ=-55 ℃<br>0.5 1 1.5 2 2.5 3<br>0 1 2 3 4 5<br>VDS, DRAIN-SOURCE VOLTAGE (V)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 14. Typical Transfer Characteristic<br>  Figure 13. Typical Output Characteristic<br>0.07 0.2<br>0.06 et tttf<br>0.15<br>0.05<br>0.04 C TP  VGS = -2.5V  re 0.1 po ID = -8.9A<br>ae<br>0.03<br> VGS = -4.5V  0.05 ID = -6.9A<br>0.02 so r EL<br>0.01 SS c— e 0 rs|<br>0 5 10 15 20 25 30 0 2 4 6 8<br>ID, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 15. Typical On-Resistance vs. Drain Current and  Figure 16. Typical Transfer Characteristic<br>Gate Voltage<br>0.045 1.6<br>VGS = -4.5V<br>0.04<br>150 ℃ 1.4<br>pi f |} 4 PTET TEL<br>0.035 ————__—_— Z<br>125 ℃<br>1.2<br>0.03<br>85 ℃  VGS = -4.5V, ID = -8.9A<br>0.025<br>25 ℃ 1<br>a ee ee 7<br>0.02<br>-55 ℃<br>0.8<br>0.015 e ee  VGS = -2.5V, ID = -6.9A<br>0.01 es 0.6 Pret tL<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A)  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 17. Typical On-Resistance vs. Drain Current and  Figure 18. On-Resistance Variation with Junction<br>Junction Temperature  Temperature<br>, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) ID<br>)<br>W<br>)<br>(W<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>DS(ON)<br>R<br>)<br>(W<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE<br>RDS(ON) RDS(ON)<br>**----- End of picture text -----**<br>


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## **Typical Characteristics - P-CHANNEL** (continued) 

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0.06<br>1.2<br>0.05<br>1<br>| | | | | | |<br>ID = -1mA<br>0.04<br> VGS = -2.5V, ID = -6.9A  0.8<br>R ed<br>ID = -250μA<br>0.03 0.6<br>oT<br>0.020.01  VGS = -4.5V, ID = -8.9A  0.40.2 PEPEELE]ELLE RAS LS<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ )  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 20. Gate Threshold Variation vs. Junction<br>Figure 19. On-Resistance Variation with Junction<br>Temperature<br>Temperature<br>10000<br>30<br>f=1MHz<br>VGS = 0V<br>25 a Ciss<br>1000<br>20<br>15 f e SS Coss<br>TJ = 85 [o] C  100<br>10 TJ = 125 [o] C  Crss<br>Ha =<br>TJ = 25 [o] C<br>5 TJ = 150 [o] C  Uff ——<———<—<<$<br>TJ = -55 [o] C<br>10<br>0 4 0 a 5 10 15 20<br>0 0.3 0.6 0.9 1.2 1.5 VDS, DRAIN-SOURCE VOLTAGE (V)<br>VSD, SOURCE-DRAIN VOLTAGE (V)  Figure 22. Typical Junction Capacitance<br>Figure 21. Diode Forward Voltage vs. Current<br>4.5 100<br>4 RDS(ON) Limited  PW =100µs<br>3.5<br>10<br>3<br>2.5<br>1 PW =1ms<br>2 PW =10ms<br>1.5 VDS = -6V, ID = -8.9A  PW =100ms PW =1s<br>0.1<br>1 fi || TSingle Pulse J(Max) = 150 ℃  TC = 25 ℃ P NN W =10s<br>0.5 DUT on 1*MRP Board  DC<br>VGS= -4.5V<br>0 fi tt | ft tf 0.01 Pret Ecco<br>0 2 4 6 8 10 12 14 16 0.01 0.1 1 10 100<br>Qg (nC)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 23. Gate Charge  Figure 24. SOA, Safe Operation Area<br>)<br>(W<br>, DRAIN-SOURCE ON-RESISTANCE  , GATE THRESHOLD VOLTAGE (V)<br>RDS(ON) VGS(TH)<br>Is, SOURCE CURRENT (A)  , JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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**www.diodes.com** 

**DMC1015UPD** [i 

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1<br>SsSs<br>SS D=0.7  [Ss] [ee] a cr<br>D=0.5<br>me 1 a —————— | ata a a — oat<br>D=0.3  TT eT<br>—_ D=0.9<br>ort Ht Le2 |<br>0.1 TNart_ropeomene<br>SO D=0.1  vALLL<br>a a ek<br>rtOFZ<br>F D=0.05  CA HITTITE<br>Lc A<br>D=0.02<br>o fyi N RN |<br>0.01 mt OH D=0.01  OO OO GO<br>eee e ay eSE e<br>aTTehOCa 0 ee<br>WE D=0.005  iin CCCI<br>mena PTT TP ny RθJA(t) = r(t) * RθJA | TTT<br>D=Single Pulse  RθJA = 104 ℃ /W<br>Duty Cycle, D = t1 / t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 25. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMC1015UPD Document number: DS37992 Rev. 4 - 2 

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**DMC1015UPD** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**PowerDI5060-8 (Type C)** 

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po PowerDI5060-8 (Type C)<br>D Dim  Min  Max  Typ<br>D1 A  0.90 1.10 1.00<br>A1  0  0.05  0.02<br>0 (4x) b  0.33 0.51  0.41<br>b1  0.300 0.366 0.333<br>x c c r ++ b2  0.20 0.35 0.25<br>TT E1 E A1 TF c  0.23 0.33 0.277<br>y Seating Plane D  5.15 BSC<br>e D1  4.85  4.95  4.90<br>Glia B= D2  1.40  1.60  1.50<br>1<br>Ø 1.000 Depth 0.07± 0.030 0 1(4x) D3  -  -  3.98<br>E  6.15 BSC<br>ee E1  5.75  5.85  5.80<br>b1(8x) DETAIL A E2  3.56  3.76  3.66<br>e/2<br>b(8x) e  1.27BSC<br>1 k  -  -  1.27<br>D3 b2(2x) k1  0.56  -  -<br>L k L  0.51  0.71  0.61<br>ee k1 eet A<br>La  0.51  0.71  0.61<br>E2 D2 L4 L1  0.05  0.20  0.175<br>PGR D2 M = DETAIL A BEE L4  -  -  0.125<br>M  3.50  3.71  3.605<br>x  -  -  1.400<br>La L1<br>ately cae y -  -  1.900<br>θ  10°  12°  11°<br>a θ1  6°  8°  7°<br>Po All Dimensions in mm<br>ested Pad Layout yout out<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>PowerDI5060-8 (Type C)<br>X4<br>8<br>Value<br>ta Dimensions<br>. + (in mm)<br>C  1.270<br>Y1 G  0.660<br>X3 X2 G1  0.820<br>Y2 X  0.610<br>X1  3.910<br>Y3<br>G1 X2  1.650<br>X3  1.650<br>X4  4.420<br>X1<br>oe Y  1.270<br>Y1  1.020<br>Y(4x)<br>Y2  3.810<br>0 0 0 04 Y3 6.610<br>1<br>G<br>tL X C Ae<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout yout out** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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DMC1015UPD Document number: DS37992 Rev. 4 - 2 

October 2019 © Diodes Incorporated 

**DMC1015UPD** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the        failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

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DMC1015UPD Document number: DS37992 Rev. 4 - 2 

October 2019 © Diodes Incorporated
Updated at June 9, 2026
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