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DMA80IM1600HB
Standard Recovery Diode, 1.6 kV, 80 A, Single, 1.17 V, 1.3 kA
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Standard Recovery Rectifier Diodes
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Diode Case Style: TO-247
- Diode Configuration: Single
- Forward Voltage Max: 1.17V
- Forward Surge Current: 1.3kA
- Reverse Recovery Time: -
- Average Forward Current: 80A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 1.6kV
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 3.27 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## **DMA80IM1600HB** ## **Standard Rectifier** **VRRM** _**=**_ **1600 V I FAV** _**=**_ **80 A VF** _**=**_ **1.55 V** ## Single Diode ## **Part number** ## **DMA80IM1600HB** Backside: cathode 1 2 3 ## **Features / Advantages:** - Planar passivated chips - Very low leakage current - Very low forward voltage drop ## **Applications:** - Diode for main rectification - For single and three phase bridge configurations ## **Package:** TO-247 - Industry standard outline - RoHS compliant - Epoxy meets UL 94V-0 - Improved thermal behaviour - High commutation robustness - High surge capability ## **Disclaimer Notice** Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20190716b © 2019 IXYS all rights reserved **DMA80IM1600HB** |**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**| |---|---|---|---|---|---| |**Symbol**<br>**Definition**<br>**Conditions**||**min.**|**typ.**|**max.**|**Unit**| |**VRSM**<br>_max. non-repetitive reverse blocking voltage_<br>T = 25°C<br>VJ||||1700|V| |**VRRM**<br>_max. repetitive reverse blocking voltage_<br>T = 25°C<br>VJ||||1600|V| |**IR**<br>_reverse current_|V = V<br>R<br>T = 25°C<br>VJ<br>T = °C<br>VJ<br>V = V<br>R<br>1600<br>150<br>1600|||40<br>1.5|mA<br>µA| |**VF**<br>_forward voltage drop_|T = 25°C<br>VJ<br>I = A<br>F<br>80<br>I = A<br>F<br>160|||1.17<br>1.22|V<br>V| ||T = °C<br>VJ<br>I = A<br>F<br>80<br>I = A<br>F<br>160<br>150|||1.55<br>1.59|V<br>V| |**I**<br>**FAV**<br>_average forward current_|T = °C<br>C<br>125<br>T = °C<br>VJ<br>175<br>180° sine|||80|A| |**VF0**<br>T = °C<br>VJ<br>175<br>**rF**<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||||0.82<br>4.8|V<br>mΩ| |**R**<br>_thermal resistance junction to case_<br>**thJC**||||0.35|K/W| |**R**<br>_thermal resistance case to heatsink_<br>**thCH**|||0.25||K/W| |**Ptot**<br>_total power dissipation_|T = 25°C<br>C|||430|W| |**IFSM**<br>_max. forward surge current_|t = 10 ms; (50 Hz), sine<br>T = 45°C<br>VJ<br>V = 0 V<br>R<br>t = 8,3 ms; (60 Hz), sine|||1.30<br>1.41|kA<br>kA| ||T = °C<br>VJ<br>150<br>V = 0 V<br>R<br>t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|||1.11<br>1.20|kA<br>kA| |**I²t**<br>_value for fusing_|T = 45°C<br>V = 0 V<br>t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine<br>VJ<br>R|||8.45<br>8.21|kA²s<br>kA²s| ||T = °C<br>150<br>V = 0 V<br>t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine<br>VJ<br>R|||6.11<br>5.94|kA²s<br>kA²s| |**CJ**<br>_junction capacitance_|V = V;<br>400<br>T = 25°C<br>f = 1 MHz<br>R<br>VJ||43||pF| **==> picture [307 x 253] intentionally omitted <==** IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20190716b © 2019 IXYS all rights reserved ## **DMA80IM1600HB** |**Ratings**<br>**Package**<br>**TO-247**|**Ratings**<br>**Package**<br>**TO-247**|**Ratings**<br>**Package**<br>**TO-247**|**Ratings**<br>**Package**<br>**TO-247**|**Ratings**<br>**Package**<br>**TO-247**| |---|---|---|---|---| |**Symbol**<br>**Definition**<br>**Conditions**|**min.**|**typ.**|**max.**|**Unit**| |**I RMS**<br>_RMS current_<br>per terminal|||70|A| |**TVJ**<br>_virtual junction temperature_|-55||175|°C| |**Top**<br>_operation temperature_|-55||150|°C| |**Tstg**<br>_storage temperature_|-55||150|°C| |**Weight**||6||g| |**M D**<br>_mounting torque_<br>**FC**<br>_mounting force with clip_|0.8||1.2|| ||20|||| **==> picture [191 x 144] intentionally omitted <==** **----- Start of picture text -----**<br> Product Marking<br>Logo IXYS<br>Part No. XXXXXXXXX<br>Assembly Line Zyyww<br>abcd<br>Assembly Code<br>Date Code<br>**----- End of picture text -----**<br> |**Part description**|**Part description**|**Part description**| |---|---|---| |D|=|Diode| |M|=|Standard Rectifier| |A|=|(up to 1800V)| |80|=|Current Rating [A]| |IM|=|Single Diode| |1600|=|Reverse Voltage [V]| |HB|=|TO-247AD (3)| |**rdering**|**Ordering Number**<br>|**Marking on Product**|**Delivery Mode**|**Quantity**|**Code No.**| |---|---|---|---|---|---| |tandard|DMA80IM1600HB<br>|DMA80IM1600HB|Tube|30|505616| |**Equivalent Circuits for Simulation**<br>T =<br>VJ<br>175 °C<br>_* on die level_|**Equivalent Circuits for Simulation**<br>T =<br>VJ<br>175 °C<br>_* on die level_| |---|---| |I|V0<br>~~R~~0| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20190716b © 2019 IXYS all rights reserved **DMA80IM1600HB** ## **Outlines TO-247** |**Outlines**<br>**TO-247**|**Outlines**<br>**TO-247**|**Outlines**<br>**TO-247**| |---|---|---| |S<br>ØP<br>ØP1<br>D2<br>D1<br>E1<br>**4**<br>**1**<br>**2**<br>**3**<br>L<br>L1<br>2xb2<br>3xb<br>b4<br>2xe<br>2xE2<br>D<br>E<br>Q<br>A<br>A2<br>A1<br>C<br>**Sym.**<br>**Inches**<br>**Millimeter**<br>**min.**<br>**max.**<br>**min.**<br>**max.**<br>A<br>0.185<br>0.209<br>4.70<br>5.30<br>A1<br>0.087<br>0.102<br>2.21<br>2.59<br>A2<br>0.059<br>0.098<br>1.50<br>2.49<br>D<br>0.819<br>0.845<br>20.79<br>21.45<br>E<br>0.610<br>0.640<br>15.48<br>16.24<br>E2<br>0.170<br>0.216<br>4.31<br>5.48<br>e<br>0.215 BSC<br>5.46 BSC<br>L<br>0.780<br>0.800<br>19.80<br>20.30<br>L1<br>-<br>0.177<br>-<br>4.49<br>Ø P<br>0.140<br>0.144<br>3.55<br>3.65<br>Q<br>0.212<br>0.244<br>5.38<br>6.19<br>S<br>0.242 BSC<br>6.14 BSC<br>b<br>0.039<br>0.055<br>0.99<br>1.40<br>b2<br>0.065<br>0.094<br>1.65<br>2.39<br>b4<br>0.102<br>0.135<br>2.59<br>3.43<br>c<br>0.015<br>0.035<br>0.38<br>0.89<br>D1<br>0.515<br>-<br>13.07<br>-<br>D2<br>0.020<br>0.053<br>0.51<br>1.35<br>E1<br>0.530<br>-<br>13.45<br>-<br>Ø P1<br>-<br>0.29<br>-<br>7.39||| |||| ||2<br>1<br>3|| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20190716b © 2019 IXYS all rights reserved **DMA80IM1600HB** ## **Rectifier** **==> picture [496 x 647] intentionally omitted <==** **----- Start of picture text -----**<br> 160 1100 10 [4]<br>50 Hz, 80%VRRM V R = 0 V<br>140<br>1000<br>120 TVJ = 45°C<br>IF 100 900<br>I<br>FSM TVJ = 45°C I [2] t<br>[A] 80 800<br>[A] TVJ = 150°C<br>6040 TT VJVJ == 12525°°CC 700 TVJ = 150°C [A [2] s]<br>TVJ = 150 ° C 600<br>20<br>0 500 10 [3]<br>0.0 0.5 1.0 1.5 2.0 0.001 0.01 0.1 1 1 2 3 4 5 6 7 8 910<br>VF [V] t [s] t [ms]<br>Fig. 1 Forward current versus Fig. 2 Surge overload current Fig. 3 I [2] t versus time per diode<br>voltage drop per diode versus time per diode<br>140 80<br>RthHA [K/W]<br>DC =<br>120 0.4<br>DC = 0.6 1<br>1 0.8 60 0.5<br>100 0.5 1.0 0.4<br>0.4 2.0 0.33<br>Ptot 80 0.330.17 4.0 IF(AV)M 0.170.08<br>0.08 40<br>[W] 60 [A]<br>40<br>20<br>20<br>0 0<br>0 20 40 60 80 100 0 50 100 150 0 50 100 150 200<br>IF(AV)M [A] Tamb [°C] TC [°C]<br>Fig. 4 Power dissipation versusdirect output current Fig. 5 Max. forward current versus<br>and ambient temperature per diode case temperature per diode<br>0.4<br>0.3<br>Constants for ZthJC calculation:<br>ZthJC i Rthi (K/W) ti (s)<br>0.2<br>1 0.023 0.0006<br>[K/W] 2 0.065 0.0038<br>3 0.094 0.0190<br>0.1<br>4 0.168 0.1300<br>0.0<br>1 10 100 1000 10000<br>t [ms]<br>**----- End of picture text -----**<br> Fig. 6 Transient thermal impedance junction to case versus time per diode IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20190716b © 2019 IXYS all rights reserved
Updated at April 22, 2026
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