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DLA60I1200HA
Standard Recovery Diode, 1.2 kV, 60 A, Single, 1.19 V, 725 A
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Standard Recovery Rectifier Diodes
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 2Pins
- Product Range: -
- Qualification: -
- Diode Case Style: TO-247AD
- Diode Configuration: Single
- Forward Voltage Max: 1.19V
- Forward Surge Current: 725A
- Reverse Recovery Time: -
- Average Forward Current: 60A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 1.2kV
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 3.11 € |
| Current stock | 10+ |
| Lead time | 7 days |
Datasheet
## **DLA60I1200HA** ## **Low Voltage Standard Rectifier** **VRRM** _**=**_ **1200 V I FAV** _**=**_ **60 A VF** _**=**_ **1.1 V** ## Single Diode ## **Part number** ## **DLA60I1200HA** **==> picture [67 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> Backside: cathode<br>**----- End of picture text -----**<br> **==> picture [115 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> 3 1<br>**----- End of picture text -----**<br> ## **Features / Advantages:** - Planar passivated chips - Very low leakage current - Very low forward voltage drop ## **Package:** TO-247 ## **Applications:** - Diode for main rectification ● Industry standard outline - For single and three phase ● RoHS compliant bridge configurations ● Epoxy meets UL 94V-0 - Improved thermal behaviour ## **Disclaimer Notice** Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129b © 2019 IXYS all rights reserved **DLA60I1200HA** |**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**| |---|---|---|---|---|---| |**Symbol**<br>**Definition**<br>**Conditions**||**min.**|**typ.**|**max.**|**Unit**| |**VRSM**<br>_max. non-repetitive reverse blocking voltage_<br>T = 25°C<br>VJ||||1300|V| |**VRRM**<br>_max. repetitive reverse blocking voltage_<br>T = 25°C<br>VJ||||1200|V| |**IR**<br>_reverse current_|V = V<br>R<br>T = 25°C<br>VJ<br>T = °C<br>VJ<br>V = V<br>R<br>1200<br>150<br>1200|||30<br>0.3|mA<br>µA| |**VF**<br>_forward voltage drop_|T = 25°C<br>VJ<br>I = A<br>F<br>60<br>I = A<br>F<br>120|||1.19<br>1.42|V<br>V| ||T = °C<br>VJ<br>I = A<br>F<br>60<br>I = A<br>F<br>120<br>150|||1.10<br>1.41|V<br>V| |**I**<br>**FAV**<br>_average forward current_|T = °C<br>C<br>150<br>T = °C<br>VJ<br>175<br>d =<br>rectangular<br>0.5|||60|A| |**VF0**<br>T = °C<br>VJ<br>175<br>**rF**<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||||0.78<br>5.1|V<br>mΩ| |**R**<br>_thermal resistance junction to case_<br>**thJC**||||0.3|K/W| |**R**<br>_thermal resistance case to heatsink_<br>**thCH**|||0.3||K/W| |**Ptot**<br>_total power dissipation_|T = 25°C<br>C|||500|W| |**IFSM**<br>_max. forward surge current_|t = 10 ms; (50 Hz), sine<br>T = 45°C<br>VJ<br>V = 0 V<br>R<br>t = 8,3 ms; (60 Hz), sine|||850<br>920|A<br>A| ||T = °C<br>VJ<br>150<br>V = 0 V<br>R<br>t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|||725<br>780|A<br>A| |**I²t**<br>_value for fusing_|T = 45°C<br>V = 0 V<br>t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine<br>VJ<br>R|||3.62<br>3.52|kA²s<br>kA²s| ||T = °C<br>150<br>V = 0 V<br>t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine<br>VJ<br>R|||2.63<br>2.53|kA²s<br>kA²s| |**CJ**<br>_junction capacitance_|V = V;<br>400<br>T = 25°C<br>f = 1 MHz<br>R<br>VJ||33||pF| **==> picture [307 x 253] intentionally omitted <==** IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129b © 2019 IXYS all rights reserved **DLA60I1200HA** |**Ratings**<br>**Package**<br>**TO-247**|**Ratings**<br>**Package**<br>**TO-247**|**Ratings**<br>**Package**<br>**TO-247**|**Ratings**<br>**Package**<br>**TO-247**|**Ratings**<br>**Package**<br>**TO-247**| |---|---|---|---|---| |**Symbol**<br>**Definition**<br>**Conditions**|**min.**|**typ.**|**max.**|**Unit**| |**I RMS**<br>_RMS current_<br>per terminal|||70|A| |**TVJ**<br>_virtual junction temperature_|-55||175|°C| |**Top**<br>_operation temperature_|-55||150|°C| |**Tstg**<br>_storage temperature_|-55||150|°C| |**Weight**||6||g| |**M D**<br>_mounting torque_<br>**FC**<br>_mounting force with clip_|0.8||1.2|| ||20|||| **==> picture [191 x 144] intentionally omitted <==** **----- Start of picture text -----**<br> Product Marking<br>Logo IXYS<br>Part Number XXXXXXXXX<br>Date Code yywwZ<br>1234<br>Lot#<br>Location<br>**----- End of picture text -----**<br> ## **Part description** - D = Diode L = Low Voltage Standard Rectifier A = (up to 1200V) - 60 = Current Rating [A] I = Single Diode - 1200 = Reverse Voltage [V] HA = TO-247AD (2) |**Ordering**|**Ordering Number**|**Marking on Product**|**Delivery Mode**|**Quantity**|**Code No.**| |---|---|---|---|---|---| |Standard|DLA60I1200HA|DLA60I1200HA|Tube|30|508170| **==> picture [341 x 68] intentionally omitted <==** **----- Start of picture text -----**<br> Equivalent Circuits for Simulation * on die level T =VJ 175°C<br>I V0 R 0 Rectifier<br>V 0 max threshold voltage 0.78 V<br>R0 max slope resistance * 2.5 mΩ<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129b © 2019 IXYS all rights reserved **DLA60I1200HA** ## **Outlines TO-247** **==> picture [510 x 483] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||| |---|---|---|---|---|---|---| |A|D2| |E|A2|Ø P|Ø P1| |Sym.|Inches Millimeter| |min.|max.|min.|max.| |Q|S|A|0.185|0.209|4.70|5.30| |A1|0.087|0.102|2.21|2.59| |A2|0.059|0.098|1.50|2.49| |D1|D|0.819|0.845|20.79|21.45| |D|E|0.610|0.640|15.48|16.24| |E2|0.170|0.216|4.31|5.48| |2x E2| |4|e|0.430 BSC 10.92 BSC| |L|0.780|0.800|19.80|20.30| |L1|-|0.177|-|4.49| |1|2|3| |Ø P|0.140|0.144|3.55|3.65| |Q|0.212|0.244|5.38|6.19| |L1|E1|S|0.242 BSC 6.14 BSC| |b|0.039|0.055|0.99|1.40| |b2|0.065|0.094|1.65|2.39| |L| |b4|0.102|0.135|2.59|3.43| |c|0.015|0.035|0.38|0.89| |D1|0.515|-|13.07|-| |2x b2|D2|0.020|0.053|0.51|1.35| |2x b|C|E1|0.530|-|13.45|-| |A1|Ø P1|-|0.29|-|7.39| |e| **----- End of picture text -----**<br> **==> picture [509 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 3 1<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129b © 2019 IXYS all rights reserved **DLA60I1200HA** ## **Rectifier** **==> picture [508 x 660] intentionally omitted <==** **----- Start of picture text -----**<br> 80 700 10 [4]<br>VR = 0 V<br>60 600<br>T VJ = 45°C<br>IF IFSM TVJ = 45°C I [2] t TVJ = 150°C<br>40 500 10 [3]<br>[A] TVJ = 150°C [A]<br>T VJ = 125°C [A [2] s]<br>TVJ = 25°C TVJ = 150°C<br>20 400<br>50 Hz, 80% VRRM<br>0 300 10 [2]<br>0.0 0.5 1.0 1.5 0.001 0.01 0.1 1 1 2 3 4 5 6 7 8 910<br>VF [V] t [s] t [ms]<br>Fig. 1 Forward current versus Fig. 2 Surge overload current Fig. 3 I [2] t versus time per diode<br>voltage drop per diode<br>90 80<br>80 R thHA =<br>DC = 0.6 K/W<br>70 0.51 0.8 K/W 1.0 K/W 60 DC = 1<br>60 0.4 2.0 K/W 0.5<br>0.33 4.0 K/W I 0.4<br>50 0.17 8.0 K/W F(AV)M 0.33<br>Ptot 0.08 40 0.17<br>40 [A] 0.08<br>[W]30<br>20<br>20<br>10<br>0 0<br>0 10 20 30 40 50 60 70 0 25 50 75 100 125 150 175 200 0 50 100 150 200<br>IF(AV)M [A] Tamb [[°C]] TC [°C]<br>Fig. 4 Power dissipation vs. direct output current and ambient temperature Fig. 5 Max. forward current vs.<br>case temperature<br>0.3<br>ZthJC Constants for ZthJC calculation:<br>i Rthi (K/W) ti (s)<br>0.2<br>1 0.044 0.007<br>[K/W]<br>2 0.027 0.0001<br>3 0.029 0.02<br>0.1<br>4 0.05 0.37<br>5 0.15 0.15<br>0.0<br>1 10 100 1000 10000<br>t [ms]<br>Fig. 6 Transient thermal impedance junction to case<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129b © 2019 IXYS all rights reserved
Updated at March 26, 2026
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