DHG30I600HA

**DHG 30 I 600HA** 

advanced 

## **Sonic-FRD** 

High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 

**VRRM = 600 V IFAV = 30 A t rr = 35 ns** 

**Part number** _(Marking on product)_ 

3 1 

DHG 30 I 600HA 

## **Features / Advantages:** 

- Planar passivated chips 

- Very low leakage current 

- Very short recovery time 

- Improved thermal behaviour 

- Very low Irm-values 

- Very soft recovery behaviour 

- Avalanche voltage rated for reliable operation 

## **Applications:** 

- Antiparallel diode for high frequency switching devices 

- Antisaturation diode 

- Snubber diode 

- Free wheeling diode 

- Rectifiers in switch mode power supplies (SMPS) 

- Uninterruptible power supplies (UPS) 

## **Package:** 

## TO-247AD 

   - Industry standard outline 

   - Epoxy meets UL 94V-0 

   - RoHS compliant 

- Soft reverse recovery for low EMI/RFI 

- Low Irm reduces: 

- Power dissipation within the diode 

- Turn-on loss in the commutating switch 

||**R a t i n g s**|**R a t i n g s**|**R a t i n g s**||
|---|---|---|---|---|
|**Symbol**<br>**Definition**<br>**Conditions**|**min.**<br>~~om~~|**typ.**<br>~~om~~|**max.**<br>~~om~~|**Unit**|
|VRRM<br>_max. repetitive reverse voltage_<br>TVJ<br>°C<br>=<br>25|~~om~~|~~om~~|600<br>~~om~~|V|
|IR<br>VR =<br>TVJ<br>V<br>°C<br>=<br>TVJ<br>°C<br>=<br>VR =<br>600<br>V<br>600<br>25<br>_reverse current_<br>125|~~om~~|~~om~~|50<br>5<br>~~om~~|µA<br>mA|
|VF<br>TVJ =<br>°C<br>IF =<br>A<br>30<br>25<br>_forward voltage_<br>TVJ =<br>°C<br>IF =<br>A<br>30<br>125<br>IF =<br>A<br>60<br>IF =<br>A<br>60|~~om~~<br>~~tf~~|~~om~~<br>~~tf~~|2.36<br>2.20<br>~~om~~<br>~~tf~~|V<br>V<br>V<br>V|
|IFAV<br>TC =<br>85 °C<br>_average forward current_<br>rectangular, d = 0.5<br>~~|~~|~~tf~~<br>~~{|~~|~~tf~~<br>~~{||~~|30<br>~~tf~~<br>~~|~~|A|
|VF0<br>TVJ = 150 °C<br>r F<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_<br>~~|~~|~~tf~~<br>~~{|~~|~~tf~~<br>~~{||~~|1.31<br>28.6<br>~~tf~~<br>~~|~~|V<br>Ω<br>m|
|R thJC<br>_thermal resistance junction to case_<br>~~|~~|~~{|~~|~~{||~~|0.70<br>~~|~~|K/W|
|TVJ<br>_virtual junction temperature_<br>~~|~~|-55<br>~~{|~~|~~{| |~~|150<br>~~|~~|°C|
|Ptot<br>TC<br>°C<br>=<br>25<br>_total power dissipation_|||180|W|
|IFSM<br>ms (50 Hz), sine<br>TVJ =<br>45 °C<br>tp = 10<br>_max. forward surge current_|~~qe~~|~~qe~~|200<br>~~qe~~|A|
|IRM<br>/dt<br>IF =<br>A;<br>VR =<br>V<br>t rr<br>30<br>-diF<br>=<br>600 A/µs<br>400<br>_max. reverse recovery current_<br>_reverse recovery time_<br>TVJ<br>°C<br>=<br>25<br>TVJ<br>°C<br>= 125<br>TVJ<br>°C<br>=<br>25<br>TVJ<br>°C<br>= 125|~~qe~~|12<br>35<br>~~qe~~|~~qe~~|A<br>A<br>ns<br>ns|
|CJ<br>_junction capacitance_<br>VR =<br>V;<br>300<br>TVJ<br>f = 1 MHz<br>=<br>°C<br>25|~~qe~~|~~qe~~|~~qe~~|pF|
|EAS<br>TVJ<br>°C<br>=<br>IAS=<br>A;<br>L =<br>µH<br>100<br>25<br>_non-repetitive avalanche energy_|~~qe~~|~~qe~~|tbd<br>~~qe~~|mJ|
|IAR<br>VA =<br>f = 10 kHz<br>1.5·VR typ.;<br>_repetitive avalanche current_|||tbd|A|



IXYS reserves the right to change limits, conditions and dimensions. 

* Data according to IEC 60747and per diode unless otherwise specified 

© 2006 IXYS all rights reserved 

**DHG 30 I 600HA** 

advanced 

|||||**Ratings**|||
|---|---|---|---|---|---|---|
|**Symbol**|**Definition**|**Conditions**|**min.**|**typ.**|**max.**|**Unit**|
|IRMS|_RMS current_|per pin*|||70|A|
|RthCH|_thermal resistance case to heatsink_|||0.25||K/W|
|MD|_mounting torque_||0.8||1.2|Nm|
|F C|_mounting force with clip_||20||120|N|
|T stg|_storage temperature_||-55||150|°C|
|Weight||||6||g|



* Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. 

In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. 

## Outlines TO-247AD 

|Dim.|Millimeter|Millimeter|Inches|Inches|
|---|---|---|---|---|
||Min.|Max.|Min.|Max.|
|A|19.81|20.32|0.780|0.800|
|B|20.80|21.46|0.819|0.845|
|C<br>D<br>E<br>F<br>G<br>H|15.75 <br>3.55<br>4.32<br>5.4<br>1.65<br>-|16.26 <br>3.65<br>5.49<br>6.2<br>2.13<br>4.5|0.610 <br>0.140 <br>0.170 <br>0.212 <br>0.065 <br>-|0.640<br> 0.144<br> 0.216<br> 0.244<br> 0.084<br>0.177|
|J|1.0|1.4|0.040|0.055|
|K|10.8|11.0|0.426|0.433|
|L|4.7|5.3|0.185|0.209|
|M|0.4|0.8|0.016|0.031|
|N|1.5|2.49|0.087|0.102|



IXYS reserves the right to change limits, conditions and dimensions. 

* Data according to IEC 60747and per diode unless otherwise specified 

© 2006 IXYS all rights reserved