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DHG20I1200PA
Fast / Ultrafast Diode, 1.2 kV, 20 A, Single, 2.37 V, 75 ns, 135 A
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:1.2kV; Forward Current If(AV):20A; Diode Configuration:Single; Forward Voltage VF Max:2.37V; Reverse Recovery Time trr Max:75ns; Forward Surge Current Ifs
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 3 Pin
- Product Range: DHG20
- Qualification: -
- Diode Case Style: TO-220AC
- Diode Configuration: Single
- Forward Voltage Max: 2.37V
- Forward Surge Current: 135A
- Reverse Recovery Time: 75ns
- Average Forward Current: 20A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 1.2kV
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.75 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**DHG 20 I 1200 PA** preliminary ## **Sonic Fast Recovery Diode** High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode **VRRM[=] 1200 V IFAV = 20 A t rr = 200 ns** ## **Part number** DHG 20 I 1200 PA 3 1 Backside: cathode ## **Features / Advantages: Applications:** - Antiparallel diode for high frequency switching devices - Planar passivated chips - Very low leakage current - Very short recovery time - Antisaturation diode - Snubber diode - Improved thermal behaviour - Very low Irm-values - Free wheeling diode - Very soft recovery behaviour - Rectifiers in switch mode power supplies (SMPS) - Avalanche voltage rated for reliable operation - Uninterruptible power supplies (UPS) ## **Package:** - Housing: TO-220 - ●rIndustry standard outline - ●rEpoxy meets UL 94V-0 - ●rRoHS compliant - Soft reverse recovery for low EMI/RFI - Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch |**Symbol**<br>**Definition**<br>**Conditions**|**min.**|**typ.**|**max.**|**Unit**| |---|---|---|---|---| |VRRM<br>_max. repetitive reverse voltage_<br>TVJ<br>°C<br>=<br>25<br>~~14~~|~~14~~|~~14~~|1200|V| |IR<br>VR =<br>TVJ<br>V<br>°C<br>=<br>TVJ<br>°C<br>=<br>VR =<br>1200<br>V<br>1200<br>25<br>_reverse current_<br>125<br>~~14~~<br>~~ae~~|~~14~~<br>~~ae~~|~~14~~<br>~~ae~~|30<br>0.4|mA<br>µA| |V F<br>TVJ =<br>°C<br>IF =<br>A<br>20<br>25<br>_forward voltage_<br>TVJ =<br>°C<br>IF =<br>A<br>20<br>IF =<br>A<br>40<br>IF =<br>A<br>40<br>125<br>~~i~~|~~i~~|~~i~~|2.24<br>2.90|V<br>V| ||||2.25<br>3.17|V<br>V| |I<br>TC =<br>95°C<br>d =<br>rectangular<br>0.5<br>FAV<br>_average forward current_<br>~~a~~|~~a~~|~~a~~|20|A| |VF0<br>TVJ =<br>150°C<br>r F<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_<br>~~a~~<br>~~Ti~~|~~a~~<br>~~Ti~~|~~a~~<br>~~Ti~~|1.25<br>45|V<br>mΩ| |R<br>_thermal resistance junction to case_<br>thJC<br>~~Ti~~<br>~~=~~|~~Ti~~<br>~~=~~|~~Ti~~<br>~~=~~|0.90|K/W| |TVJ<br>_virtual junction temperature_<br>~~=~~|-55<br>~~=~~|~~=~~|150|°C| |Ptot<br>TC<br>°C<br>=<br>25<br>_total power dissipation_|||140|W| |IFSM<br>t = 10 ms<br>TVJ =<br>45°C<br>_max. forward surge current_<br>(50 Hz), sine|||150|A| |TVJ =<br>°C<br>_reverse recovery time_<br>IRM<br>_max. reverse recovery current_<br>IF =<br>A;<br>20<br>25<br>T<br>=<br>125°C<br>VJ<br>-diF<br>=<br>A/µs<br>400<br>/dt<br>t rr<br>VR =<br>V<br>600<br>TVJ =<br>°C<br>25<br>T<br>=<br>125°C<br>VJ||15<br>20<br>200<br>350||ns<br>A<br>A<br>ns| |CJ<br>_junction capacitance_<br>V =<br>V;<br>T<br>f = 1 MHz<br>=<br>°C<br>25<br>R<br>VJ<br>600||8||pF| IXYS reserves the right to change limits, conditions and dimensions. 20110616a Data according to IEC 60747and per diode unless otherwise specified © 2011 IXYS all rights reserved **DHG 20 I 1200 PA** preliminary |preliminary|preliminary|preliminary|preliminary|preliminary| |---|---|---|---|---| |**Symbol**<br>**Definition**<br>**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Conditions**<br>**Unit**||||| |IRMS<br>per terminal<br>_RMS current_|||35|A| |R thCH<br>_thermal resistance case to heatsink_||0.50||K/W| |Tstg<br>_storage temperature_|-55||150|°C| |Weight||2||g| |M D<br>_mounting torque_<br>FC<br>_mounting force with clip_|0.4<br>20||0.6<br>60|Nm<br>N| **==> picture [469 x 227] intentionally omitted <==** **----- Start of picture text -----**<br> Product Marking<br>Part number<br>D = Diode<br>H = Sonic Fast Recovery Diode<br>G = extreme fast<br>Marking on product abcdef 20 = Current Rating [A]<br>I = Single Diode<br>Logo YYWW Z 1200 = Reverse Voltage [V]<br>DateCode PA = TO-220AC (2)<br>Assembly Code XXXXXX<br>Assembly Line<br>**----- End of picture text -----**<br> **==> picture [347 x 21] intentionally omitted <==** **----- Start of picture text -----**<br> Ordering Ordering Number Marking on Product Delivery Mode Quantity Code No.<br>Standard DHG 20 I 1200 PA DHG20I1200PA Tube 50 504934<br>**----- End of picture text -----**<br> |Similar Part|Package|Voltage Class| |---|---|---| |DHG20I1200HA|TO-247AD(2)|1200| IXYS reserves the right to change limits, conditions and dimensions. 20110616a Data according to IEC 60747and per diode unless otherwise specified © 2011 IXYS all rights reserved preliminary ## **DHG 20 I 1200 PA** ||||||||||||preliminary|preliminary|preliminary| |---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||Outlines T||O-220||||||||Dim.<br>Millimeter<br>Inches<br>Min.<br>Max.<br>Min.<br>Max.<br>A<br>4.32<br>4.82<br>0.170<br>0.190<br>A1<br>1.14<br>1.39<br>0.045<br>0.055<br>A2<br>2.29<br>2.79<br>0.090<br>0.110<br>b<br>0.64<br>1.01<br>0.025<br>0.040<br>b2<br>1.15<br>1.65<br>0.045<br>0.065<br>C<br>0.35<br>0.56<br>0.014<br>0.022<br>D<br>14.73<br>16.00<br>0.580<br>0.630<br>E<br>9.91<br>10.66<br>0.390<br>0.420<br>e<br>5.08<br>BSC<br>0.200<br>BSC<br>H1<br>5.85<br>6.85<br>0.230<br>0.270<br>L<br>12.70<br>13.97<br>0.500<br>0.550<br>L1<br>2.79<br>5.84<br>0.110<br>0.230<br>ØP<br>3.54<br>4.08<br>0.139<br>0.161<br>Q<br>2.54<br>3.18<br>0.100<br>0.125||| ||ØP||E|||Q|||||Dim.|Millimeter<br>Min.<br>Max.|Inches<br>Min.<br>Max.| ||||||||||||A<br>A1<br>A2|4.32<br>4.82<br>1.14<br>1.39<br>2.29<br>2.79|0.170<br>0.190<br>0.045<br>0.055<br>0.090<br>0.110| ||||||||||||||| ||||||||||||||| ||||||||||||||| ||||||||||||b<br>b2|0.64<br>1.01<br>1.15<br>1.65|0.025<br>0.040<br>0.045<br>0.065| ||||||4||||||||| ||2x b2<br>2x b<br>1||||||||||||| |||||||D|||||||| |||1||3|||||||C<br>D|0.35<br>0.56<br>14.73<br>16.00|0.014<br>0.022<br>0.580<br>0.630| ||||||||||||E<br>e<br>H1|9.91<br>10.66<br>5.08<br>BSC<br>5.85<br>6.85|0.390<br>0.420<br>0.200<br>BSC<br>0.230<br>0.270| |||||||L1|||||||| |||||||L|||||L<br>L1|12.70<br>13.97<br>2.79<br>5.84|0.500<br>0.550<br>0.110<br>0.230| ||||||||||||||| ||||||||||||ØP<br>Q|3.54<br>4.08<br>2.54<br>3.18|0.139<br>0.161<br>0.100<br>0.125| ||||e||||||||||| ||||||||||||||| IXYS reserves the right to change limits, conditions and dimensions. 20110616a Data according to IEC 60747and per diode unless otherwise specified © 2011 IXYS all rights reserved **DHG 20 I 1200 PA** preliminary **==> picture [502 x 433] intentionally omitted <==** **----- Start of picture text -----**<br> 40 5<br>T VJ = 125°C<br>VR = 600 V<br>30 4<br>40 A<br>IF Qrr<br>20 3<br>20 A<br>[A] [µC]<br>TVJ = 125°C<br>10 2<br>TVJ = 25°C 10 A<br>0 1<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 200 300 400 500 600 700<br>VF [V] diF /dt [A/µs]<br>Fig. 1 Typ. Forward current versus VF Fig. 2 Typ. reverse recov.charge Qrr vs. di/dt<br>35 700<br>30 TVJVJ = 125°C 40 A 600 TVJVJ = 125°C<br>VRR = 600 V VRR = 600 V<br>20 A<br>25 500<br>10 A<br>IRMRM 20 trrrr 400<br>40 A<br>[A] 15 [ns] 300<br>20 A<br>10 A<br>10 200<br>5 100<br>0 0<br>200 300 400 500 600 700 200 300 400 500 600 700<br>diF /dtF /dt /dt [A/µs] diF /dtF /dt /dt [A/µs]<br>Fig. 3 Typ. peak reverse current IRM vs. di/dtRM vs. di/dt vs. di/dt Fig. 4 Typ. recovery time trr versus di/dt versus di/dt<br>**----- End of picture text -----**<br> **==> picture [501 x 435] intentionally omitted <==** **----- Start of picture text -----**<br> 35 700<br>30 TVJVJ = 125°C 40 A 600 TVJVJ = 125°C<br>VRR = 600 V VRR = 600 V<br>20 A<br>25 500<br>10 A<br>IRMRM 20 trrrr 400<br>40 A<br>[A] 15 [ns] 300<br>20 A<br>10 A<br>10 200<br>5 100<br>0 0<br>200 300 400 500 600 700 200 300 400 500 600 700<br>diF /dtF /dt /dt [A/µs] diF /dtF /dt /dt [A/µs]<br>Fig. 3 Typ. peak reverse current IRM vs. di/dtRM vs. di/dt vs. di/dt Fig. 4 Typ. recovery time trr versus di/dt<br>1.4 1<br>T VJ = 125°C<br>1.2 V R = 600 V<br>1.0<br>40 A<br>E<br>rec Z<br>thJC<br>0.8<br>20 A<br>[mJ]<br>[K/W]<br>0.6<br>10 A R i t i<br>1 0.231 0.0005<br>0.4 2 0.212 0.004<br>3 0.19 0.02<br>4 0.267 0.15<br>0.2 0.1<br>200 300 400 500 600 700 0.001 0.01 0.1 1 10<br>diF /dt [A/µs] tp [s]<br>Fig. 5 Typ. recovery energy Erec versus di/dt Fig. 6 Typ. transient thermal impedance<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. 20110616a Data according to IEC 60747and per diode unless otherwise specified © 2011 IXYS all rights reserved
Updated at June 4, 2026
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