DHG10I1200PM

## **DHG10I1200PM** 

preliminary 

## **Sonic Fast Recovery Diode** 

**VRRM** _**=**_ **1200 V I FAV** _**=**_ **10 A t rr** _**=**_ **75 ns** 

High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 

## **Part number** 

## **DHG10I1200PM** 

Backside: isolated 

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## **Features / Advantages:** 

- Planar passivated chips 

- Very low leakage current 

- Very short recovery time 

- Improved thermal behaviour 

- Very low Irm-values 

- Very soft recovery behaviour 

- Avalanche voltage rated for reliable operation 

## **Applications:** 

- Antiparallel diode for high frequency switching devices 

- Antisaturation diode 

- Snubber diode 

- Free wheeling diode 

- Rectifiers in switch mode power supplies (SMPS) 

- Uninterruptible power supplies (UPS) 

## **Package:** TO-220FP 

   - Isolation Voltage:          V~2500 

   - Industry standard outline 

   - RoHS compliant 

   - Epoxy meets UL 94V-0 

   - Soldering pins for PCB mounting 

   - Base plate: Plastic overmolded tab 

   - Reduced weight 

- Soft reverse recovery for low EMI/RFI 

- Low Irm reduces: 

- Power dissipation within the diode 

- Turn-on loss in the commutating switch 

## **Terms  Conditions of usage:** 

The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. 

Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; 

- the conclusion of quality agreements; 

- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131126a 

© 2013 IXYS all rights reserved 

## **DHG10I1200PM** 

|||preliminary<br>**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|preliminary<br>**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|preliminary<br>**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|preliminary<br>**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|preliminary<br>**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|
|---|---|---|---|---|---|---|
|**Fast Diode**|||||||
|**Symbol**<br>**Definition**<br>**Conditions**|||||||
|**VRSM**<br>_max. non-repetitive reverse blocking voltage_||T    =   25°C<br>VJ|||1200|V|
|**VRRM**<br>_max. repetitive reverse blocking voltage_||T    =   25°C<br>VJ|||1200|V|
|**I R**<br>_reverse current, drain current_|V    =          V<br>R<br>V    =          V<br>R<br>1200<br>1200|T    =   25°C<br>VJ<br>T    =       °C<br>VJ<br>125|||15<br>1.2|mA<br>µA|
|**VF**<br>_forward voltage drop_|I  =          A<br>F<br>10<br>I  =          A<br>F<br>20|T    =   25°C<br>VJ|||2.22<br>2.92|V<br>V|
||I  =          A<br>F<br>10<br>I  =          A<br>F<br>20|T    =       °C<br>VJ<br>125|||2.13<br>3.06|V<br>V|
|**I**<br>**FAV**<br>_average forward current_|T  =       °C<br>C<br>30<br>d =<br>rectangular<br>0.5|T    =       °C<br>VJ<br>150|||10|A|
|**VF0**<br>**rF**<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||T    =       °C<br>VJ<br>150|||1.09<br>94|V<br>mΩ|
|**R**<br>_thermal resistance junction to case_<br>**thJC**|||||4|K/W|
|**R**<br>_thermal resistance case to heatsink_<br>**thCH**||||0.50||K/W|
|**Ptot**<br>_total power dissipation_||T    =   25°C<br>C|||30|W|
|**IFSM**<br>t = 10 ms; (50 Hz), sine;<br>_max. forward surge current_<br>V  = 0 V<br>R||T    =   45°C<br>VJ|||65|A|
|**CJ**<br>_junction capacitance_<br>V  =         V<br>600<br>f = 1 MHz<br>R||T    =   25°C<br>VJ||4||pF|
|_reverse recovery time_<br>**IRM**<br>_max. reverse recovery current_<br>IF =<br>A;<br>10<br>-diF<br>=<br>A/µs<br>350<br>/dt<br>**trr**<br>VR =<br>V<br>800||TVJ =<br>°C<br>25<br>T<br>=<br>°C<br>VJ||8<br>tbd||A<br>A|
|||TVJ =<br>°C<br>25<br>T<br>=<br>°C<br>VJ||75<br>tbd||ns<br>ns|



IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131126a 

© 2013 IXYS all rights reserved 

**DHG10I1200PM** 

preliminary 

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||||||||
|---|---|---|---|---|---|---|
|Package|TO-220FP|Ratings|
|Symbol|Definition|Conditions|min.|typ.|max.|Unit|
|I RMS|RMS current|per terminal|35|A|
|TVJ|virtual junction temperature|-55|150|°C|
|T|op|operation temperature|-55|125|°C|
|Tstg|storage temperature|-55|150|°C|
|Weight|2|g|
|M D|mounting torque|0.4|0.6|Nm|
|FC|mounting force with clip|20|60|N|
|d|Spp/App|terminal to terminal|3.2|2.7|mm|
|creepage distance on surface | striking distance through air|
|d|Spb/Apb|terminal to backside|2.5|2.5|mm|
|VISOL|isolation voltage|t = 1 second|50/60 Hz, RMS; I      ISOL|≤ 1 mA|2500|V|
|t = 1 minute|2100|V|

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||||||
|---|---|---|---|---|
|Product Marking|Part description|
|D|=|Diode|
|H|=|Sonic Fast Recovery Diode|
|G|=|extreme fast|
|10|=|Current Rating [A]|
|I|=|Single Diode|
|1200|=|Reverse Voltage [V]|
|Part Number|abcdef|PM|=|TO-220ACFP (2)|
|Logo|YYWW Z|
|DateCode|
|Assembly Code|XXXXXX|
|Assembly Line|

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|||||||
|---|---|---|---|---|---|
|Ordering|Ordering Number|Marking on Product|Delivery Mode|Quantity|Code No.|
|Standard|DHG10I1200PM|DHG10I1200PM|Tube|50|503672|
|Similar Part|Package|Voltage class|
|DHG10I1200PA|TO-220AC (2)|1200|

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**----- Start of picture text -----**<br>
 Equivalent Circuits for Simulation * on die level T    =VJ 150 °C<br>I V0 R 0 Fast<br>Diode<br>V 0 max threshold voltage 1.09 V<br>R0 max slope resistance * 91 mΩ<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131126a 

© 2013 IXYS all rights reserved 

**DHG10I1200PM** 

preliminary 

## **Outlines TO-220FP** 

|**Outlines**<br>**TO-220FP**||||||
|---|---|---|---|---|---|
|Note:<br>All metal surface are<br>matte pure tin plated<br>except trimmed area.<br>ØP<br>A<br>A1<br>H<br>A2<br>Q<br>L1<br>D<br>E<br>L<br>b<br>b1<br>c<br>e<br>1<br>3<br>d1||||||
||Dim.|Millimeters||Inches||
|||min|max|min|max|
||A|4.50|4.90|0.177|0.193|
||A1|2.34|2.74|0.092|0.108|
||A2|2.56|2.96|0.101|0.117|
||b|0.70|0.90|0.028|0.035|
||b1|1.27|1.47|0.050|0.058|
||c|0.45|0.60|0.018|0.024|
||D|15.67|16.07|0.617|0.633|
||d1|0|1.10|0|0.043|
||E|9.96|10.36|0.392|0.408|
||e|2.54 BSC||0.100 BSC||
||H|6.48|6.88|0.255|0.271|
||L|12.68|13.28|0.499|0.523|
||L1|3.03|3.43|0.119|0.135|
||Ø P|3.08|3.28|0.121|0.129|
||Q|3.20|3.40|0.126|0.134|
|||||||



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IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131126a 

© 2013 IXYS all rights reserved