DG40X12T2

IGBT, 80 A, 1.75 V, 487 W, 1.2 kV, TO-247, 3 Pins

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Manufacturer: STARPOWER
Product type: Single IGBTs
MSL: -
SVHC: To Be Advised
No. of Pins: 3Pins
Product Range: DOSEMI Trench
Power Dissipation: 487W
Transistor Mounting: Through Hole
Transistor Case Style: TO-247
Operating Temperature Max: 150°C
Continuous Collector Current: 80A
Collector Emitter Voltage Max: 1.2kV
Collector Emitter Saturation Voltage: 1.75V

Delivery and price
Units per pack	1000
Price	2.85 €
Current stock	10+
Lead time	30 days

Datasheet

DG40X12T2                                                                          IGBT Discrete 

## **DOSEMI** 

## **IGBT** 

## **DG40X12T2** 

## **1200V/40A IGBT with Diode** 

## **General Description** 

DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as electronic welder. 

## **Features** 

- Low VCE(sat) Trench IGBT technology 

- 

**==> picture [107 x 8] intentionally omitted <==**

- Maximum junction temperature 175[o] C 

- VCE(sat) with positive temperature coefficient 

- Fast & soft reverse recovery anti-parallel FWD 

- Lead free package 

## **Typical Applications** 

- Electronic welder 

## **Equivalent Circuit Schematic** 

©2016 STARPOWER Semiconductor Ltd.          7/11/2016          1/9         Preliminary 

DG40X12T2                                                                          IGBT Discrete 

## **Absolute Maximum Ratings** TC=25[o] C unless otherwise noted 

## **IGBT** 

|**IGBT**||||
|---|---|---|---|
|**Symbol**|**Description**|**Values**|**Unit**|
|VCES|Collector-EmitterVoltage|1200|V|
|VGES|Gate-Emitter Voltage|±20|V|
|IC|Collector Current  @ TC=25~~o~~C<br>@ TC=100oC|80<br>40|A|
|ICM|PulsedCollectorCurrent  tp=1ms|80|A|
|PD|Maximum Power Dissipation  @ Tj=175~~o~~C|487|W|



## **Diode** 

|**Diode**||||
|---|---|---|---|
|**Symbol**|**Description**|**Values**|**Unit**|
|VRRM|Repetitive Peak ReverseVoltage|1200|V|
|IF|Diode Continuous Forward Current|40|A|
|IFM|Diode Maximum ForwardCurrent  tp=1ms|80|A|



## **Discrete** 

|**Discrete**||||
|---|---|---|---|
|**Symbol**|**Description**|**Values**|**Unit**|
|Tjmax|Maximum Junction Temperature(inverter,brake)|175|~~o~~C|
|Tjop|Operating Junction Temperature|-40to +150|~~o~~C|
|TSTG|Storage Temperature Range|-40 to +150|~~o~~C|
|TS|SolderingTemperature,1.6mm from case for 10s|260|~~o~~C|
|M|MountingTorque, ScrewM3|0.6|N.m|



©2016 STARPOWER Semiconductor Ltd.          7/11/2016          2/9         Preliminary 

DG40X12T2                                                                          IGBT Discrete 

**IGBT Characteristics** TC=25[o] C unless otherwise noted 

|**IGBT**|**Characteristics**TC|=25oC unless otherwise n|oted||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|VCE(sat)|Collector to Emitter<br>Saturation Voltage|IC=40A,VGE=15V,<br>Tj=25oC||1.75|2.20|V|
|||IC=40A,VGE=15V,<br>Tj=125oC||2.10|||
|||IC=40A,VGE=15V,<br>Tj=150oC||2.15|||
|VGE(th)|Gate-Emitter Threshold<br>Voltage|IC=0.40mA,VCE=VGE,<br>Tj=25oC|4.5|5.5|6.5|V|
|ICES|Collector Cut-Off<br>Current|VCE=VCES,VGE=0V,<br>Tj=25oC|||1.0|mA|
|IGES|Gate-Emitter Leakage<br>Current|VGE=VGES,VCE=0V,<br>Tj=25oC|||400|nA|
|RGint|InternalGate Resistance|||/||Ω|
|Cies|Input Capacitance|VCE=30V,f=1MHz,<br>VGE=0V||6.05||nF|
|Cres|Reverse Transfer<br>Capacitance|||0.11||nF|
|QG|GateCharge|VGE=15V||0.32||μC|
|td(on)|Turn-On DelayTime|VCC=600V,IC=40A,<br>RG=10Ω,VGE=±15V,<br>Tj=25oC||57||ns|
|tr|Rise Time|||48||ns|
|td(off)|Turn-Off DelayTime|||320||ns|
|tf|Fall Time|||80||ns|
|Eon|Turn-On Switching<br>Loss|||1.63||mJ|
|Eoff|Turn-Off Switching<br>Loss|||1.39||mJ|
|td(on)|Turn-On DelayTime|VCC=600V,IC=40A,<br>RG=10Ω,VGE=±15V,<br>Tj=125oC||70||ns|
|tr|Rise Time|||65||ns|
|td(off)|Turn-Off DelayTime|||370||ns|
|tf|Fall Time|||153||ns|
|Eon|Turn-On Switching<br>Loss|||1.95||mJ|
|Eoff|Turn-Off Switching<br>Loss|||1.74||mJ|
|td(on)|Turn-On DelayTime|VCC=600V,IC=40A,<br>RG=10Ω,VGE=±15V,<br>Tj=150oC||75||ns|
|tr|Rise Time|||65||ns|
|td(off)|Turn-Off DelayTime|||385||ns|
|tf|Fall Time|||183||ns|
|Eon|Turn-On Switching<br>Loss|||2.14||mJ|
|Eoff|Turn-Off Switching<br>Loss|||1.91||mJ|



©2016 STARPOWER Semiconductor Ltd.          7/11/2016          3/9         Preliminary 

DG40X12T2                                                                          IGBT Discrete 

**Diode Characteristics** TC=25[o] C unless otherwise noted 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|---|---|
|VF|Diode Forward<br>Voltage|IC=40A,VGE=0V,Tj=25~~o~~C||2.50|2.95|V|
|||IC=40A,VGE=0V,Tj=125~~o~~C||2.70|||
|||IC=40A,VGE=0V,Tj=150~~o~~C||2.75|||
|Qr|Recovered Charge|VR=600V,IF=40A,<br>-di/dt=1000A/μs,VGE=-15V<br>Tj=25oC||1.6||μC|
|IRM|Peak Reverse<br>RecoveryCurrent|||39||A|
|Erec|Reverse Recovery<br>Energy|||0.85||mJ|
|Qr|RecoveredCharge|VR=600V,IF=40A,<br>-di/dt=1000A/μs,VGE=-15V<br>Tj=125oC||2.7||μC|
|IRM|Peak Reverse<br>Recovery Current|||48||A|
|Erec|Reverse Recovery<br>Energy|||1.83||mJ|
|Qr|RecoveredCharge|VR=600V,IF=40A,<br>-di/dt=1000A/μs,VGE=-15V<br>Tj=150oC||3.0||μC|
|IRM|Peak Reverse<br>Recovery Current|||50||A|
|Erec|Reverse Recovery<br>Energy|||2.4||mJ|



**Discrete Characteristics** TC=25[o] C unless otherwise noted 

|**Symbol**|**Parameter**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|
|RθJC|Junction-to-Case (per IGBT)<br>Junction-to-Case(per Diode)|||0.308<br>0.801|K/W|
|RθJA|Junction-to-Ambient||40||K/W|



©2016 STARPOWER Semiconductor Ltd.          7/11/2016          4/9         Preliminary 

**==> picture [513 x 658] intentionally omitted <==**

**----- Start of picture text -----**<br>
80 80<br>70 VGE=15V  70 VCE=20V<br>60 60<br>50 50<br>25 [o] C<br>40 150 [o] C  40<br>150 [o] C<br>30 30<br>25 [o] C<br>20 20<br>10 10<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 5 6 7 8 9 10 11 12<br>VCE  [V]  VGE [V]<br>Fig 1. IGBT-inverter Output Characteristics               Fig 2. IGBT-inverter Transfer Characteristics<br>4.5 8<br>4 VRGCC=10Ω =600V  7 VICCC=40A =600V<br>3.5 VGE=15V  VGE= ± 15V<br>T =150 [o] C  6 T =150 [o] C<br>j j<br>3<br>5<br>2.5 Eon  4 Eon<br>2<br>3<br>1.5<br>Eoff<br>2<br>1 Eoff<br>1<br>0.5<br>0 0<br>0 10 20 30 40 50 60 70 80 0 20 40 60 80 100<br>IC [A]  RG [Ω]<br> [A]   [A]<br>C C<br>I I<br>E [mJ]  E [mJ]<br>**----- End of picture text -----**<br>


Fig 3. IGBT-inverter Switching Loss vs. IC                Fig 4. IGBT-inverter Switching Loss vs. RG 

©2016 STARPOWER Semiconductor Ltd.          7/11/2016          5/9         Preliminary 

DG40X12T2                                                                          IGBT Discrete 

**==> picture [513 x 714] intentionally omitted <==**

**----- Start of picture text -----**<br>
90 1<br>80<br>IGBT<br>70<br>60<br>50<br>0.1<br>40<br>30<br>20 RG=10Ω<br>VGE= ± 15V  i:                1            2            3            4<br>10 Tj=150 [o] C  rτii[K/W]:   0.1089   0.0910   0.0821   0.0260 [s]:          0.1100   0.0156   0.00135  0.000151<br>0 0.01<br>0 200 400 600 800 1000 1200 1400 0.0001 0.001 0.01 0.1 1<br>VCE [V]  t [s]<br>Fig 5. IGBT-inverter RBSOA                      Fig 6. IGBT-inverter Transient Thermal Impedance<br>80 3<br>72<br>64 2.5 Erec<br>56<br>25 [o] C  2<br>48<br>40 1.5<br>32<br>150 [o] C  1<br>24 VCC=600V<br>RG=10Ω<br>16 0.5 VGE=-15V<br>T =150 [o] C<br>j<br>8<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 8 16 24 32 40 48 56 64 72 80<br>VF  [V]  IF [A]<br>Fig 7. Diode-inverter Forward Characteristics           Fig 8. Diode-inverter Switching Loss vs. IF<br>©2016 STARPOWER Semiconductor Ltd.          7/11/2016          6/9         Preliminary<br> [A]   [K/W]<br>C<br>I<br>thJC<br>Z<br> [A]<br>F<br>I E [mJ]<br>**----- End of picture text -----**<br>


DG40X12T2                                                                          IGBT Discrete 

**==> picture [513 x 314] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.50 1<br>Diode<br>2.00<br>Erec<br>1.50<br>1.00<br>VCC=600V<br>0.50 IF=40A<br>VGE=-15V  i:                1            2            3            4 ri[K/W]:   0.1089   0.0910   0.0821   0.0260<br>T =150 [o] C  τi[s]:          0.0723   0.00813  0.00109 0.000155<br>j<br>0.00 0.1<br>0 20 40 60 80 100 0.0001 0.001 0.01 0.1 1<br>RG [Ω]  t [s]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


Fig 9. Diode-inverter Switching Loss vs. RG         Fig 10. Diode-inverter Transient Thermal Impedance 

©2016 STARPOWER Semiconductor Ltd.          7/11/2016          7/9         Preliminary 

## **Circuit Schematic** 

## **Package Dimensions** 

**==> picture [418 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
©2016 STARPOWER Semiconductor Ltd.          7/11/2016          8/9         Preliminary<br>**----- End of picture text -----**<br>


DG40X12T2                                                                          IGBT Discrete 

## **Terms and Conditions of Usage** 

The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. 

This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. 

Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. 

Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. 

Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. 

If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. 

©2016 STARPOWER Semiconductor Ltd.          7/11/2016          9/9         Preliminary

Updated at April 23, 2026

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