DG20X06T2

## **DOSEMI** 

## **IGBT** 

## **DG20X06T2** 

## **600V/20A IGBT with Diode** 

## **General Description** 

DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. 

## **Features** 

- Low VCE(sat) Fast IGBT technology 

- 

**==> picture [65 x 8] intentionally omitted <==**

- Maximum junction temperature 175[o] C 

- VCE(sat) with positive temperature coefficient 

- Fast & soft reverse recovery anti-parallel FWD 

- Lead free package 

## **Typical Applications** 

- Inverter for motor drive 

- AC and DC servo drive amplifier 

- Uninterruptible power supply 

## **Equivalent Circuit Schematic** 

©2017 STARPOWER Semiconductor Ltd.          10/27/2017         1/9        Preliminary 

DG20X60T2                                                                          IGBT Discrete 

**Absolute Maximum Ratings** TC=25[o] C unless otherwise noted 

## **IGBT** 

|**IGBT**||||
|---|---|---|---|
|**Symbol**|**Description**|**Value**|**Unit**|
|VCES|Collector-EmitterVoltage|600|V|
|VGES|Gate-Emitter Voltage|±20|V|
|IC|Collector Current  @ TC=25oC<br>@ TC=100oC|42<br>29|A|
|ICM|PulsedCollectorCurrent  tplimited byTjmax|60|A|
|PD|Maximum Power Dissipation  @ Tj=175oC|313|W|



## **Diode** 

|**Diode**||||
|---|---|---|---|
|**Symbol**|**Description**|**Value**|**Unit**|
|VRRM|Repetitive Peak ReverseVoltage|600|V|
|IF|Diode Continuous Forward Current|42|A|
|IFM|Diode Maximum ForwardCurrent  tplimited byTjmax|60|A|



## **Discrete** 

|**Discrete**||||
|---|---|---|---|
|**Symbol**|**Description**|**Values**|**Unit**|
|Tjmax|Maximum Junction Temperature|175|oC|
|Tjop|Operating Junction Temperature|-40to +150|oC|
|TSTG|Storage Temperature Range|-40 to +150|oC|
|TS|SolderingTemperature,1.6mm from case for 10s|260|oC|
|M|MountingTorque, ScrewM3|0.6|N.m|



©2017 STARPOWER Semiconductor Ltd.          10/27/2017         2/9        Preliminary 

**IGBT Characteristics** TC=25[o] C unless otherwise noted 

|**IGBT**|**Characteristics**TC|=25oC unless otherwise n|oted||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|VCE(sat)|Collector to Emitter<br>Saturation Voltage|IC=20A,VGE=15V,<br>Tj=25oC||1.45|1.90|V|
|||IC=20A,VGE=15V,<br>Tj=125oC||1.60|||
|||IC=20A,VGE=15V,<br>Tj=150oC||1.70|||
|VGE(th)|Gate-Emitter Threshold<br>Voltage|IC=0.24mA,VCE=VGE,<br>Tj=25oC|5.2|5.8|6.5|V|
|ICES|Collector Cut-Off<br>Current|VCE=VCES,VGE=0V,<br>Tj=25oC|||1.0|mA|
|IGES|Gate-Emitter Leakage<br>Current|VGE=VGES,VCE=0V,<br>Tj=25oC|||400|nA|
|RGint|InternalGate Resistance|||0||Ω|
|Cies|Input Capacitance|VCE=25V,f=1MHz,<br>VGE=0V||2.32||nF|
|Cres|Reverse Transfer<br>Capacitance|||0.05||nF|
|QG|GateCharge|VGE=-15…+15V||0.14||uC|
|td(on)|Turn-On DelayTime|VCC=300V,IC=20A,<br>RG=18Ω,VGE=±15V,<br>Tj=25oC||12||ns|
|tr|Rise Time|||10||ns|
|td(off)|Turn-Off DelayTime|||96||ns|
|tf|Fall Time|||56||ns|
|Eon|Turn-On Switching<br>Loss|||0.26||mJ|
|Eoff|Turn-Off Switching<br>Loss|||0.35||mJ|
|td(on)|Turn-On DelayTime|VCC=300V,IC=20A,<br>RG=18Ω,VGE=±15V,<br>Tj=125oC||12||ns|
|tr|Rise Time|||13||ns|
|td(off)|Turn-Off DelayTime|||112||ns|
|tf|Fall Time|||76||ns|
|Eon|Turn-On Switching<br>Loss|||0.35||mJ|
|Eoff|Turn-Off Switching<br>Loss|||0.45||mJ|
|td(on)|Turn-On DelayTime|VCC=300V,IC=20A,<br>RG=18Ω,VGE=±15V,<br>Tj=150oC||12||ns|
|tr|Rise Time|||14||ns|
|td(off)|Turn-Off DelayTime|||120||ns|
|tf|Fall Time|||80||ns|
|Eon|Turn-On Switching<br>Loss|||0.39||mJ|
|Eoff|Turn-Off Switching<br>Loss|||0.47||mJ|
|ISC|SC Data|tP≤6μs,VGE=15V,<br>Tj=150oC,VCC=360V,<br>VCEM≤600V||100||A|



©2017 STARPOWER Semiconductor Ltd.          10/27/2017         3/9        Preliminary 

DG20X60T2                                                                          IGBT Discrete 

**Diode Characteristics** TC=25[o] C unless otherwise noted 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VF|Diode Forward<br>Voltage|IF=20A,VGE=0V,Tj=25oC||1.60|2.00|V|
|||IF=20A,VGE=0V,Tj=125oC||1.55|||
|||IF=20A,VGE=0V,Tj=150oC||1.50|||
|Qr|Recovered Charge|VR=300V,IF=20A,<br>-di/dt=2000A/μs,VGE=-15V<br>Tj=25oC||1.10||μC|
|IRM|Peak Reverse<br>RecoveryCurrent|||33.0||A|
|Erec|Reverse Recovery<br>Energy|||0.23||mJ|
|Qr|RecoveredCharge|VR=300V,IF=20A,<br>-di/dt=2000A/μs,VGE=-15V<br>Tj=125oC||1.93||μC|
|IRM|Peak Reverse<br>Recovery Current|||35.2||A|
|Erec|Reverse Recovery<br>Energy|||0.41||mJ|
|Qr|RecoveredCharge|VR=300V,IF=20A,<br>-di/dt=2000A/μs,VGE=-15V<br>Tj=150oC||2.42||μC|
|IRM|Peak Reverse<br>Recovery Current|||37.4||A|
|Erec|Reverse Recovery<br>Energy|||0.52||mJ|



**Discrete Characteristics** TC=25[o] C unless otherwise noted 

|**Symbol**|**Parameter**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|
|RthJC|Junction-to-Case (per IGBT)<br>Junction-to-Case(per Diode)|||0.480<br>0.910|K/W|
|RthJA|Junction-to-Ambient||40||K/W|



©2017 STARPOWER Semiconductor Ltd.          10/27/2017         4/9        Preliminary 

**==> picture [513 x 657] intentionally omitted <==**

**----- Start of picture text -----**<br>
40 40<br>35 VGE=15V  35 VCE=20V<br>30 30<br>25 25<br>20 20<br>15 15<br>10 10<br>5 Tj=25℃ 5 Tj=25℃<br>Tj=125℃ Tj=125℃<br>Tj=150℃ Tj=150℃<br>0 0<br>0 0.5 1 1.5 2 2.5 3 5 6 7 8 9 10 11 12<br>VCE  [V]  VGE [V]<br>Fig 1. IGBT-inverter Output Characteristics               Fig 2. IGBT-inverter Transfer Characteristics<br>1.4 2<br>Eon,Tj=125℃ Eon,Tj=125℃<br>1.2 Eoff,Tj=125℃ Eoff,Tj=125℃<br>Eon,Tj=150℃ 1.6 Eon,Tj=150℃<br>Eoff,Tj=150℃ Eoff,Tj=150℃<br>1<br>1.2<br>0.8<br>0.6<br>0.8<br>0.4<br>0.4<br>VCC=300V  VCC=300V<br>0.2<br>RG=18Ω  IC=20A<br>VGE=±15V  VGE=±15V<br>0 0<br>0 5 10 15 20 25 30 35 40 0 40 80 120 160 200<br>IC [A]  RG [Ω]<br> [A]   [A]<br>C C<br>I I<br>E [mJ]  E [mJ]<br>**----- End of picture text -----**<br>


Fig 3. IGBT-inverter Switching Loss vs. IC                Fig 4. IGBT-inverter Switching Loss vs. RG 

©2017 STARPOWER Semiconductor Ltd.          10/27/2017         5/9        Preliminary 

**==> picture [513 x 680] intentionally omitted <==**

**----- Start of picture text -----**<br>
50 1<br>IGBT<br>Module<br>40<br>30<br>0.1<br>20<br>RG=18Ω<br>10 VGE=±15V<br>Tj=150 [o] C  i:                1            2            3            4 ri[K/W]:   0.1694   0.1419   0.1282    0.0405<br>τi[s]:          0.1100   0.0156   0.00135  0.000151<br>0 0.01<br>0 200 400 600 800 0.0001 0.001 0.01 0.1 1<br>VCE [V]  t [s]<br>Fig 5. IGBT-inverter RBSOA                      Fig 6. IGBT-inverter Transient Thermal Impedance<br>40 0.9<br>Tj=25℃ Erec,Tj=125℃<br>35 Tj=125℃ 0.8<br>Erec,Tj=150℃<br>Tj=150℃<br>0.7<br>30<br>0.6<br>25<br>0.5<br>20<br>0.4<br>15<br>0.3<br>10<br>0.2<br>VCC=300V<br>5 0.1 RG=18Ω<br>VGE=-15V<br>0 0<br>0 0.4 0.8 1.2 1.6 2 2.4 0 5 10 15 20 25 30 35 40<br>VF  [V]  IF [A]<br>Fig 7. Diode-inverter Forward Characteristics           Fig 8. Diode-inverter Switching Loss vs. IF<br> [A]   [K/W]<br>C<br>I<br>thJC<br>Z<br> [A]<br>F<br>I E [mJ]<br>**----- End of picture text -----**<br>


©2017 STARPOWER Semiconductor Ltd.          10/27/2017         6/9        Preliminary 

DG20X60T2                                                                          IGBT Discrete 

**==> picture [513 x 314] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.7 1<br>Erec,Tj=125℃<br>0.6 Erec,Tj=150℃ Diode<br>0.5<br>0.4<br>0.3<br>0.2<br>VCC=300V  i:                1            2            3            4<br>0.1 ri[K/W]:   0.1756   0.2427    0.3049   0.1868<br>IF=20A  τi[s]:          0.0723   0.00813  0.00109 0.000155<br>VGE=-15V<br>0 0.1<br>0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1<br>RG [Ω]  t [s]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


Fig 9. Diode-inverter Switching Loss vs. RG         Fig 10. Diode-inverter Transient Thermal Impedance 

©2017 STARPOWER Semiconductor Ltd.          10/27/2017         7/9        Preliminary 

## **Circuit Schematic** 

## **Package Dimensions** 

©2017 STARPOWER Semiconductor Ltd.          10/27/2017         8/9        Preliminary 

DG20X60T2                                                                          IGBT Discrete 

## **Terms and Conditions of Usage** 

The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. 

This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. 

Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. 

Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. 

Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. 

If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. 

©2017 STARPOWER Semiconductor Ltd.          10/27/2017         9/9        Preliminary