DG10N12T2

DG10N12T2                                                                        IGBT Discretes 

## **DOSEMI** 

## **IGBT** 

## **DG10N12T2** 

## **Molding Type Discretes** 

## **1200V/10A IGBT with Anti-Parallel Diode** 

## **General Description** 

DOSEMI IGBT Power Discretes provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as                                        TO-247 general inverters and electronic welders. 

## **Features** 

- Low VCE(sat) NPT IGBT technology 

- Low switching loss 

- Maximum junction temperature 150℃ 

- 10μs short circuit capability 

- Square RBSOA 

- VCE(sat) with positive temperature coefficient 

- Fast & soft reverse recovery anti-parallel FWD 

- Tight parameter distribution 

- Lead free package                                                                   Equivalent Circuit Schematic 

## **Typical Applications** 

- Inverter for motor drive 

- AC and DC servo drive amplifier 

- Uninterruptible power supply 

- Electronic welders 

©2012 Zhejiang Dos Technologies Ltd.           3/29/2012           1/5            Preliminary 

DG10N12T2                                                                        IGBT Discretes 

**Absolute Maximum Ratings** TC=25℃ unless otherwise noted 

|**Symbol **|**Description **|**DG10N12T2**|**Units**|
|---|---|---|---|
|VCES|Collector-EmitterVoltage|1200|V|
|VGES|Gate-Emitter Voltage|±20|V|
|IC|Collector Current  @ TC=25℃<br>@ TC=100℃|20<br>10|A|
|ICM|PulsedCollectorCurrent  tp=1ms|20|A|
|IF|Diode Continuous Forward Current|10|A|
|IFM|Diode Maximum ForwardCurrent  tp=1ms|20|A|
|PD|Maximum Power Dissipation  @ Tj=150℃|321|W|
|Tjmax|Maximum Junction Temperature|150|℃|
|Tjop|OperatingJunction Temperature|-40 to +150|℃|
|Tstg|Storage Temperature Range|-40 to +125|℃|
|TS|Soldering Temperature,1.6mm from case<br>for 10s|260|℃|



## **Electrical Characteristics of IGBT** TC=25℃ unless otherwise noted 

## **Off Characteristics** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max. **|**Units**|
|---|---|---|---|---|---|---|
|V(BR)CES|Collector-Emitter<br>BreakdownVoltage|Tj=25℃|1200|||V|
|ICES|Collector Cut-Off<br>Current|VCE=VCES,VGE=0V,<br>Tj=25℃|||25|μA|
|IGES|Gate-Emitter Leakage<br>Current|VGE=VGES,VCE=0V,<br>Tj=25℃|||100|nA|



## **On Characteristics** 

|**Symbol **|**Parameter **|**Test Conditions**|**Min.**|**Typ.**|**Max. **|**Units**|
|---|---|---|---|---|---|---|
|VGE(th)|Gate-Emitter Threshold<br>Voltage|IC=500μA,VCE=VGE,<br>Tj=25℃|5.0|5.9|6.5|V|
|VCE(sat)|Collector to Emitter<br>Saturation Voltage|IC=10A,VGE=15V,<br>Tj=25℃||2.05|2.50|V|
|||IC=10A,VGE=15V,<br>Tj=125℃||2.40|||



©2012 Zhejiang Dos Technologies Ltd.           3/29/2012           2/5            Preliminary 

## **Switching Characteristics** 

|**Symbol **|**Parameter **|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|---|---|
|td(on)|Turn-On DelayTime|VCC=600V,IC=10A,<br>RG=82Ω,VGE=`±`15V,<br>Tj=25℃||181||ns|
|tr|Rise Time|||58||ns|
|td(off)|Turn-Off DelayTime|||255||ns|
|tf|Fall Time|||347||ns|
|Eon|Turn-On Switching<br>Loss|||1.79||mJ|
|Eoff|Turn-Off Switching<br>Loss|||0.73||mJ|
|td(on)|Turn-On DelayTime|VCC=600V,IC=10A,<br>RG=82Ω,VGE=`±`15V,<br>Tj=25℃||185||ns|
|tr|Rise Time|||59||ns|
|td(off)|Turn-Off DelayTime|||266||ns|
|tf|Fall Time|||480||ns|
|Eon|Turn-On Switching<br>Loss|||2.13||mJ|
|Eoff|Turn-Off Switching<br>Loss|||0.94||mJ|
|Cies|Input Capacitance|VCE=30V,f=1MHz,<br>VGE=0V||0.70||nF|
|Coes|OutputCapacitance|||0.11||nF|
|Cres|Reverse Transfer<br>Capacitance|||0.05||nF|
|QG|Gate Charge|VCC=400V,IC=10A,<br>VGE=15V||84||nC|
|ISC|SC Data|tP≤10μs,VGE=15V,<br>Tj=125℃,VCC=900V,<br>VCEM≤1200V||90||A|
|RGint|Internal Gate Resistance|||/||Ω|



## **Electrical Characteristics of Diode** TC=25℃ unless otherwise noted 

|**Symbol**|**Parameter**|**Test Conditions**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|---|---|---|
|VF|Diode Forward<br>Voltage|IF=10A,VGE=0V|Tj=25℃||1.85|2.30|V|
||||Tj=125℃||2.00|||
|Qr|Recovered<br>Charge|IF=10A,<br>VR=600V,<br>RG=82Ω,<br>VGE=-15V|Tj=25℃||0.4||μC|
||||Tj=125℃||1.4|||
|IRM|Peak Reverse<br>RecoveryCurrent||Tj=25℃||8||A|
||||Tj=125℃||9|||
|Erec|Reverse Recovery<br>Energy||Tj=25℃||0.27||mJ|
||||Tj=125℃||0.45|||



## **Thermal Characteristics** 

|**Symbol**|**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case(per IGBT)||0.389|K/W|
|RθJC|Junction-to-Case(per Diode)||0.961|K/W|
|RθJA|Junction-to-Ambient|40||K/W|



©2012 Zhejiang Dos Technologies Ltd.           3/29/2012           3/5            Preliminary 

DG10N12T2                                                                        IGBT Discretes 

## **Package Dimensions** 

Dimensions in Millimeters 

©2012 Zhejiang Dos Technologies Ltd.           3/29/2012           4/5            Preliminary 

DG10N12T2                                                                        IGBT Discretes 

## **Terms and Conditions of Usage** 

The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. 

This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. 

Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you, For those that are specifically interested we may provide application notes. 

Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. 

Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. 

If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. 

©2012 Zhejiang Dos Technologies Ltd.           3/29/2012           5/5            Preliminary